CN116057707A - 固态成像装置和识别系统 - Google Patents

固态成像装置和识别系统 Download PDF

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Publication number
CN116057707A
CN116057707A CN202180058030.6A CN202180058030A CN116057707A CN 116057707 A CN116057707 A CN 116057707A CN 202180058030 A CN202180058030 A CN 202180058030A CN 116057707 A CN116057707 A CN 116057707A
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CN
China
Prior art keywords
pixel
circuit
pixels
photoelectric conversion
rgb
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Pending
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CN202180058030.6A
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English (en)
Chinese (zh)
Inventor
中川庆
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Sony Group Corp
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Sony Group Corp
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Publication of CN116057707A publication Critical patent/CN116057707A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/17—Colour separation based on photon absorption depth, e.g. full colour resolution obtained simultaneously at each pixel location
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/705—Pixels for depth measurement, e.g. RGBZ
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/33—Transforming infrared radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/192—Colour image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
    • H04N23/12—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths with one sensor only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN202180058030.6A 2020-09-16 2021-09-03 固态成像装置和识别系统 Pending CN116057707A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020155657 2020-09-16
JP2020-155657 2020-09-16
PCT/JP2021/032464 WO2022059525A1 (ja) 2020-09-16 2021-09-03 固体撮像装置及び認識システム

Publications (1)

Publication Number Publication Date
CN116057707A true CN116057707A (zh) 2023-05-02

Family

ID=80776985

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Application Number Title Priority Date Filing Date
CN202180058030.6A Pending CN116057707A (zh) 2020-09-16 2021-09-03 固态成像装置和识别系统

Country Status (5)

Country Link
US (1) US20230326938A1 (https=)
JP (1) JP7768138B2 (https=)
CN (1) CN116057707A (https=)
DE (1) DE112021004873T5 (https=)
WO (1) WO2022059525A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118975261A (zh) * 2022-03-30 2024-11-15 索尼半导体解决方案公司 传感器设备和用于操作传感器设备的方法

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CN101064787A (zh) * 2006-04-29 2007-10-31 格科微电子（上海）有限公司 一种cmos图像传感器象素
JP2011015223A (ja) * 2009-07-02 2011-01-20 Olympus Corp 固体撮像装置
JP2011142556A (ja) * 2010-01-08 2011-07-21 Olympus Corp 固体撮像装置
WO2013084808A1 (ja) * 2011-12-07 2013-06-13 ソニー株式会社 固体撮像素子およびその駆動方法、カメラシステム
US20150288903A1 (en) * 2014-04-07 2015-10-08 Canon Kabushiki Kaisha Solid-state image sensor, image capturing apparatus and control method thereof, and storage medium
US20160037088A1 (en) * 2014-07-30 2016-02-04 Toshiba Tec Kabushiki Kaisha Object recognition apparatus that performs object recognition based on infrared image and visible image
CN105518862A (zh) * 2013-09-25 2016-04-20 索尼公司 固态成像器件、固态成像器件的驱动方法及电子装置
JP2017208496A (ja) * 2016-05-20 2017-11-24 ソニー株式会社 固体撮像装置、及び、電子機器
WO2018012068A1 (ja) * 2016-07-12 2018-01-18 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、固体撮像装置の駆動方法、及び、電子機器
WO2020026720A1 (ja) * 2018-07-31 2020-02-06 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置

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US7459686B2 (en) * 2006-01-26 2008-12-02 L-3 Communications Corporation Systems and methods for integrating focal plane arrays
JP2011024362A (ja) * 2009-07-17 2011-02-03 Fuji Xerox Co Ltd 高圧電源装置
JP2011243862A (ja) * 2010-05-20 2011-12-01 Sony Corp 撮像デバイス及び撮像装置
CN108389870A (zh) 2017-02-03 2018-08-10 松下知识产权经营株式会社 摄像装置
JP7240833B2 (ja) 2018-08-01 2023-03-16 日本放送協会 撮像素子
TWI832864B (zh) * 2018-08-07 2024-02-21 日商索尼半導體解決方案公司 攝像裝置及攝像系統
JP7329318B2 (ja) * 2018-10-25 2023-08-18 ソニーグループ株式会社 固体撮像装置及び撮像装置
JP2020088676A (ja) * 2018-11-28 2020-06-04 ソニーセミコンダクタソリューションズ株式会社 センサ及び制御方法
CN110493536B (zh) * 2019-05-31 2021-10-22 杭州海康威视数字技术股份有限公司 图像采集装置和图像采集的方法

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CN101064787A (zh) * 2006-04-29 2007-10-31 格科微电子（上海）有限公司 一种cmos图像传感器象素
JP2011015223A (ja) * 2009-07-02 2011-01-20 Olympus Corp 固体撮像装置
JP2011142556A (ja) * 2010-01-08 2011-07-21 Olympus Corp 固体撮像装置
WO2013084808A1 (ja) * 2011-12-07 2013-06-13 ソニー株式会社 固体撮像素子およびその駆動方法、カメラシステム
CN105518862A (zh) * 2013-09-25 2016-04-20 索尼公司 固态成像器件、固态成像器件的驱动方法及电子装置
US20150288903A1 (en) * 2014-04-07 2015-10-08 Canon Kabushiki Kaisha Solid-state image sensor, image capturing apparatus and control method thereof, and storage medium
US20160037088A1 (en) * 2014-07-30 2016-02-04 Toshiba Tec Kabushiki Kaisha Object recognition apparatus that performs object recognition based on infrared image and visible image
JP2017208496A (ja) * 2016-05-20 2017-11-24 ソニー株式会社 固体撮像装置、及び、電子機器
WO2018012068A1 (ja) * 2016-07-12 2018-01-18 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、固体撮像装置の駆動方法、及び、電子機器
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JPWO2022059525A1 (https=) 2022-03-24
DE112021004873T5 (de) 2023-08-03
WO2022059525A1 (ja) 2022-03-24
US20230326938A1 (en) 2023-10-12
JP7768138B2 (ja) 2025-11-12

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