JPWO2022059525A1 - - Google Patents

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Publication number
JPWO2022059525A1
JPWO2022059525A1 JP2022550474A JP2022550474A JPWO2022059525A1 JP WO2022059525 A1 JPWO2022059525 A1 JP WO2022059525A1 JP 2022550474 A JP2022550474 A JP 2022550474A JP 2022550474 A JP2022550474 A JP 2022550474A JP WO2022059525 A1 JPWO2022059525 A1 JP WO2022059525A1
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2022550474A
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Japanese (ja)
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JP7768138B2 (ja
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Publication of JPWO2022059525A1 publication Critical patent/JPWO2022059525A1/ja
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Publication of JP7768138B2 publication Critical patent/JP7768138B2/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/17—Colour separation based on photon absorption depth, e.g. full colour resolution obtained simultaneously at each pixel location
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/705—Pixels for depth measurement, e.g. RGBZ
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/33—Transforming infrared radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/192—Colour image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
    • H04N23/12—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths with one sensor only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2022550474A 2020-09-16 2021-09-03 固体撮像装置及び認識システム Active JP7768138B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020155657 2020-09-16
JP2020155657 2020-09-16
PCT/JP2021/032464 WO2022059525A1 (ja) 2020-09-16 2021-09-03 固体撮像装置及び認識システム

Publications (2)

Publication Number Publication Date
JPWO2022059525A1 true JPWO2022059525A1 (https=) 2022-03-24
JP7768138B2 JP7768138B2 (ja) 2025-11-12

Family

ID=80776985

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022550474A Active JP7768138B2 (ja) 2020-09-16 2021-09-03 固体撮像装置及び認識システム

Country Status (5)

Country Link
US (1) US20230326938A1 (https=)
JP (1) JP7768138B2 (https=)
CN (1) CN116057707A (https=)
DE (1) DE112021004873T5 (https=)
WO (1) WO2022059525A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118975261A (zh) * 2022-03-30 2024-11-15 索尼半导体解决方案公司 传感器设备和用于操作传感器设备的方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070170359A1 (en) * 2006-01-26 2007-07-26 Syllaios Athanasios J Systems and methods for integrating focal plane arrays
JP2011024362A (ja) * 2009-07-17 2011-02-03 Fuji Xerox Co Ltd 高圧電源装置
JP2017208496A (ja) * 2016-05-20 2017-11-24 ソニー株式会社 固体撮像装置、及び、電子機器
CN110493536A (zh) * 2019-05-31 2019-11-22 杭州海康威视数字技术股份有限公司 图像采集装置和图像采集的方法
WO2020031655A1 (ja) * 2018-08-07 2020-02-13 ソニーセミコンダクタソリューションズ株式会社 撮像装置及び撮像システム
JP2020068483A (ja) * 2018-10-25 2020-04-30 ソニー株式会社 固体撮像装置及び撮像装置
JP2020088676A (ja) * 2018-11-28 2020-06-04 ソニーセミコンダクタソリューションズ株式会社 センサ及び制御方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101064787B (zh) * 2006-04-29 2010-08-11 格科微电子（上海）有限公司 一种cmos图像传感器像素
JP5308937B2 (ja) * 2009-07-02 2013-10-09 オリンパス株式会社 固体撮像装置
JP2011142556A (ja) * 2010-01-08 2011-07-21 Olympus Corp 固体撮像装置
JP2011243862A (ja) * 2010-05-20 2011-12-01 Sony Corp 撮像デバイス及び撮像装置
JP2013121027A (ja) * 2011-12-07 2013-06-17 Sony Corp 固体撮像素子およびその駆動方法、カメラシステム
JP6127869B2 (ja) * 2013-09-25 2017-05-17 ソニー株式会社 固体撮像素子及びその駆動方法、並びに電子機器
JP6305169B2 (ja) * 2014-04-07 2018-04-04 キヤノン株式会社 固体撮像素子、撮像装置及びその制御方法、プログラム、記憶媒体
JP2016033694A (ja) * 2014-07-30 2016-03-10 東芝テック株式会社 物体認識装置及び物体認識プログラム
JP2018011141A (ja) * 2016-07-12 2018-01-18 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、固体撮像装置の駆動方法、及び、電子機器
CN108389870A (zh) 2017-02-03 2018-08-10 松下知识产权经营株式会社 摄像装置
TWI833774B (zh) * 2018-07-31 2024-03-01 日商索尼半導體解決方案公司 固體攝像裝置
JP7240833B2 (ja) 2018-08-01 2023-03-16 日本放送協会 撮像素子

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070170359A1 (en) * 2006-01-26 2007-07-26 Syllaios Athanasios J Systems and methods for integrating focal plane arrays
JP2011024362A (ja) * 2009-07-17 2011-02-03 Fuji Xerox Co Ltd 高圧電源装置
JP2017208496A (ja) * 2016-05-20 2017-11-24 ソニー株式会社 固体撮像装置、及び、電子機器
WO2020031655A1 (ja) * 2018-08-07 2020-02-13 ソニーセミコンダクタソリューションズ株式会社 撮像装置及び撮像システム
JP2020068483A (ja) * 2018-10-25 2020-04-30 ソニー株式会社 固体撮像装置及び撮像装置
JP2020088676A (ja) * 2018-11-28 2020-06-04 ソニーセミコンダクタソリューションズ株式会社 センサ及び制御方法
CN110493536A (zh) * 2019-05-31 2019-11-22 杭州海康威视数字技术股份有限公司 图像采集装置和图像采集的方法

Also Published As

Publication number Publication date
DE112021004873T5 (de) 2023-08-03
WO2022059525A1 (ja) 2022-03-24
US20230326938A1 (en) 2023-10-12
JP7768138B2 (ja) 2025-11-12
CN116057707A (zh) 2023-05-02

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