DE112021004873T5 - Festkörperbildgebungsvorrichtung und erkennungssystem - Google Patents

Festkörperbildgebungsvorrichtung und erkennungssystem Download PDF

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Publication number
DE112021004873T5
DE112021004873T5 DE112021004873.2T DE112021004873T DE112021004873T5 DE 112021004873 T5 DE112021004873 T5 DE 112021004873T5 DE 112021004873 T DE112021004873 T DE 112021004873T DE 112021004873 T5 DE112021004873 T5 DE 112021004873T5
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DE
Germany
Prior art keywords
pixel
circuit
pixels
photoelectric conversion
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE112021004873.2T
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German (de)
English (en)
Inventor
Kei NAKAGAWA
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Group Corp
Original Assignee
Sony Group Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Group Corp filed Critical Sony Group Corp
Publication of DE112021004873T5 publication Critical patent/DE112021004873T5/de
Granted legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/17—Colour separation based on photon absorption depth, e.g. full colour resolution obtained simultaneously at each pixel location
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/705—Pixels for depth measurement, e.g. RGBZ
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/33—Transforming infrared radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/192—Colour image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
    • H04N23/12—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths with one sensor only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE112021004873.2T 2020-09-16 2021-09-03 Festkörperbildgebungsvorrichtung und erkennungssystem Granted DE112021004873T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020155657 2020-09-16
JP2020-155657 2020-09-16
PCT/JP2021/032464 WO2022059525A1 (ja) 2020-09-16 2021-09-03 固体撮像装置及び認識システム

Publications (1)

Publication Number Publication Date
DE112021004873T5 true DE112021004873T5 (de) 2023-08-03

Family

ID=80776985

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112021004873.2T Granted DE112021004873T5 (de) 2020-09-16 2021-09-03 Festkörperbildgebungsvorrichtung und erkennungssystem

Country Status (5)

Country Link
US (1) US20230326938A1 (https=)
JP (1) JP7768138B2 (https=)
CN (1) CN116057707A (https=)
DE (1) DE112021004873T5 (https=)
WO (1) WO2022059525A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118975261A (zh) * 2022-03-30 2024-11-15 索尼半导体解决方案公司 传感器设备和用于操作传感器设备的方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018125848A (ja) 2017-02-03 2018-08-09 パナソニックＩｐマネジメント株式会社 撮像装置
JP2020021855A (ja) 2018-08-01 2020-02-06 日本放送協会 撮像素子およびその製造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7459686B2 (en) * 2006-01-26 2008-12-02 L-3 Communications Corporation Systems and methods for integrating focal plane arrays
CN101064787B (zh) * 2006-04-29 2010-08-11 格科微电子（上海）有限公司 一种cmos图像传感器像素
JP5308937B2 (ja) * 2009-07-02 2013-10-09 オリンパス株式会社 固体撮像装置
JP2011024362A (ja) * 2009-07-17 2011-02-03 Fuji Xerox Co Ltd 高圧電源装置
JP2011142556A (ja) * 2010-01-08 2011-07-21 Olympus Corp 固体撮像装置
JP2011243862A (ja) * 2010-05-20 2011-12-01 Sony Corp 撮像デバイス及び撮像装置
JP2013121027A (ja) * 2011-12-07 2013-06-17 Sony Corp 固体撮像素子およびその駆動方法、カメラシステム
JP6127869B2 (ja) * 2013-09-25 2017-05-17 ソニー株式会社 固体撮像素子及びその駆動方法、並びに電子機器
JP6305169B2 (ja) * 2014-04-07 2018-04-04 キヤノン株式会社 固体撮像素子、撮像装置及びその制御方法、プログラム、記憶媒体
JP2016033694A (ja) * 2014-07-30 2016-03-10 東芝テック株式会社 物体認識装置及び物体認識プログラム
JP2017208496A (ja) * 2016-05-20 2017-11-24 ソニー株式会社 固体撮像装置、及び、電子機器
JP2018011141A (ja) * 2016-07-12 2018-01-18 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、固体撮像装置の駆動方法、及び、電子機器
TWI833774B (zh) * 2018-07-31 2024-03-01 日商索尼半導體解決方案公司 固體攝像裝置
TWI832864B (zh) * 2018-08-07 2024-02-21 日商索尼半導體解決方案公司 攝像裝置及攝像系統
JP7329318B2 (ja) * 2018-10-25 2023-08-18 ソニーグループ株式会社 固体撮像装置及び撮像装置
JP2020088676A (ja) * 2018-11-28 2020-06-04 ソニーセミコンダクタソリューションズ株式会社 センサ及び制御方法
CN110493536B (zh) * 2019-05-31 2021-10-22 杭州海康威视数字技术股份有限公司 图像采集装置和图像采集的方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018125848A (ja) 2017-02-03 2018-08-09 パナソニックＩｐマネジメント株式会社 撮像装置
JP2020021855A (ja) 2018-08-01 2020-02-06 日本放送協会 撮像素子およびその製造方法

Also Published As

Publication number Publication date
JPWO2022059525A1 (https=) 2022-03-24
WO2022059525A1 (ja) 2022-03-24
US20230326938A1 (en) 2023-10-12
JP7768138B2 (ja) 2025-11-12
CN116057707A (zh) 2023-05-02

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