CN116053338A - 一种基于MoO3-x/Bi2O2Se异质集成的近红外光电传感器的制备方法 - Google Patents
一种基于MoO3-x/Bi2O2Se异质集成的近红外光电传感器的制备方法 Download PDFInfo
- Publication number
- CN116053338A CN116053338A CN202211683606.0A CN202211683606A CN116053338A CN 116053338 A CN116053338 A CN 116053338A CN 202211683606 A CN202211683606 A CN 202211683606A CN 116053338 A CN116053338 A CN 116053338A
- Authority
- CN
- China
- Prior art keywords
- sio
- moo
- pmma
- wafer
- mica
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 239000010445 mica Substances 0.000 claims abstract description 22
- 229910052618 mica group Inorganic materials 0.000 claims abstract description 22
- 229910004298 SiO 2 Inorganic materials 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 15
- 238000012546 transfer Methods 0.000 claims abstract description 10
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims abstract description 4
- 239000002135 nanosheet Substances 0.000 claims abstract description 4
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 33
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 33
- 235000012431 wafers Nutrition 0.000 claims description 19
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 8
- 238000000609 electron-beam lithography Methods 0.000 claims description 8
- 238000002207 thermal evaporation Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 230000008020 evaporation Effects 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 5
- 238000004528 spin coating Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000002791 soaking Methods 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- 239000002243 precursor Substances 0.000 claims description 3
- 238000007790 scraping Methods 0.000 claims description 3
- 238000003786 synthesis reaction Methods 0.000 claims description 3
- 238000011144 upstream manufacturing Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 claims description 2
- 238000000137 annealing Methods 0.000 claims description 2
- 238000011010 flushing procedure Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 2
- 238000005086 pumping Methods 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims description 2
- 230000004044 response Effects 0.000 abstract description 16
- 239000002784 hot electron Substances 0.000 abstract description 10
- 238000004891 communication Methods 0.000 abstract description 9
- 230000027756 respiratory electron transport chain Effects 0.000 abstract description 7
- 230000035945 sensitivity Effects 0.000 abstract description 7
- 238000001514 detection method Methods 0.000 abstract description 6
- FBGGJHZVZAAUKJ-UHFFFAOYSA-N bismuth selenide Chemical compound [Se-2].[Se-2].[Se-2].[Bi+3].[Bi+3] FBGGJHZVZAAUKJ-UHFFFAOYSA-N 0.000 abstract description 3
- 230000007246 mechanism Effects 0.000 abstract description 3
- 230000010354 integration Effects 0.000 abstract description 2
- 239000013307 optical fiber Substances 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 description 8
- 230000007547 defect Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000001000 micrograph Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000002064 nanoplatelet Substances 0.000 description 2
- 230000021715 photosynthesis, light harvesting Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 238000013112 stability test Methods 0.000 description 2
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000004298 light response Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
- H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Nanotechnology (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
- Light Receiving Elements (AREA)
Abstract
本发明涉及一种基于氧化钼/硒氧化铋异质集成的快速高灵敏近红外光电传感器的制备方法，属于光电传感器领域。本发明的制备方法，包括如下步骤；1）合成层状Bi2O2Se纳米片，所用基板为云母片；2）将Bi2O2Se片从云母基板转移到SiO2/Si晶圆上；3）在晶圆上制备光电传感器。根据该方法制备的器件基于热电子转移机制运作，可同时实现快速和高灵敏近红外探测，能够解决当前商用光伏器件灵敏度低下的问题，以及光电导器件响应速度慢的问题。本发明制备出的基于MoO3‑x/Bi2O2Se异质集成的近红外光电传感器在1310和1550 nm两个重要的光纤通讯波段兼具快速响应和高灵敏特性，器件光电流稳定性长达半年。在通讯系统的光接收模块中具有重要的应用价值。
Description
技术领域
本发明涉及一种基于氧化钼/硒氧化铋异质集成的快速高灵敏近红外光电传感器的制备方法，属于光电传感器领域。
背景技术
在近红外(NIR)波长中，原始波段(O波段，1260nm～1360nm)和常规波段(C波段，1530nm～1565nm)由于其在光纤中的低能量耗散，对光通信至关重要[见参考文献1-4]。在先进的通信系统中，对这些波段工作的快速高灵敏光电探测器有着迫切需求。通常情况下，为了有效地进行信号提取，光接收机中的光电探测器的响应时间需要快于微秒。但是，由于没有光增益，当前结型结构器件的响应率较低(小于1A/W)[见参考文献5]。光电导器件在实现高响应方面具有优势。然而，它们的响应时间通常低于毫秒。如何在同一个器件中兼顾高灵敏度和快速响应非常必要。
二维层状Bi2O2Se具有较高的迁移率、优异的环境稳定性以及适合近红外探测的带隙而备受关注。其突出的光电特性使Bi2O2Se在通信波段的光探测中具有优势。然而，由于Bi2O2Se近红外探测器在近红外波长处的光吸收效率较低，在红外区域的灵敏度往往较低[见参考文献6]。
参考文献：
[1]M.Bock,P.Eich,S.Kucera,M.Kreis,A.Lenhard,C.Becher and J.Eschner,“High-fidelity entanglement between a trapped ion and a telecom photon viaquantum frequency conversion,”Nat.Commun.vol.9,May.2018,Art.no.1998.
[2]B.Zhu,T.F.Taunay,M.F.Yan,J.M.Fini,M.Fishteyn,E.M.Monberg andF.V.Dimarcello.“Seven-core multicore fiber transmissions for passive opticalnetwork,”Opt.Express.vol.18,no.11,pp.11117-11122,May 2010.
[3]Q.Wang,Y.Wen,K.Cai,R.Cheng,L.Yin,Y.Zhang,J.Li,Z.Wang,F.Wang,F.Wang,T.A.Shifa,C.Jiang,H.Yang and J.He,“Nonvolatile infrared memory inMoS2/PbS van der Waals heterostructures,”Sci.Adv.,vol.4,no.4,Apr 2018,Art.no.eaap7916.
[4]Z.Ren,P.Wang,K.Zhang,W.Ran,J.Yang,Y.-Y.Liu,Z.Lou,G.Shen,and Z.Wei.“Short-Wave Near-Infrared Polarization Sensitive Photodetector Based on GaSbNanowire”IEEE Electron.Device Lett.vol.42,no.4,pp.549-552,Apr 2021.
[5]S.Ke,Y.Ye,J.Wu,D.Liang,B.Cheng,Z.Li,Y.Ruan,X.Zhang,W.Huang,J.Wang,J.Xu,C.Li and S.Chen,“Low-Temperature Fabrication of Wafer-Bonded Ge/Si p-i-nPhotodiodes by Layer Exfoliation and Nanosecond-Pulse Laser Annealing,”IEEETrans.Electron.Devices vol.66,no.3,pp.1353-1360,Mar 2019.
[6]Y.Zhang,Q.Gao,X.Han and Y.Peng,“Mechanical flexibility and strainengineered-band structures of monolayer Bi2O2Se,”Physica E LowDimens.Syst.Nanostruct.vol.116,Feb 2020,Art.no.113728.
发明内容
针对现有技术存在的不足，本发明在于提供一种基于MoO3-x/Bi2O2Se(其中x的范围介于0和1之间)异质集成的近红外光电传感器的制备方法，该器件兼具快速和高灵敏度近红外响应，以及良好的器件稳定性的有益效果。
为了解决现有器件的性能问题，本发明的发明人首次提出将Bi2O2Se与表面等离激元结构相集成。这样能够有效地将光束缚于微尺度表面，从而改善二维材料的光-物质相互作用。本发明利用重掺杂半导体材料MoO3-x具有独特的红外局域表面等离激元共振的特征，将其运用于红外光电转换[MoO3-x具体如文献[7]所记载，S.D.Lounis,E.L.Runnerstrom,A.Llordes and D.J.Milliron,“Defect Chemistry and Plasmon Physics of ColloidalMetal Oxide Nanocrystals,”J.Phys.Chem.Lett.vol.5,no.9,pp.1564-1574,May2014.]。与传统的光伏和光电导器件具有本质上的不同，该复合器件是基于热电子转移的光电机制运作，MoO3-x中的等离激元热电子转移到Bi2O2Se沟道，避免了带间缺陷态束缚以及净余动能耗散的问题，能够有效兼顾快速响应和高灵敏光电转换，为高性能近红外探测提供了一种重要策略。
为实现上述目的，本发明提供了如下技术方案：
一种基于MoO3-x/Bi2O2Se异质集成的近红外光电传感器的制备方法，包括如下步骤；
1)采用化学气相沉积法合成层状Bi2O2Se纳米片，所用基板为云母片；
2)将Bi2O2Se片从云母基板转移到SiO2/Si晶圆上，以用于后续在标准半导体工艺的晶圆上制备光电传感器；
3)在SiO2/Si晶圆上旋涂光刻胶聚甲基丙烯酸甲酯，即PMMA，采用电子束光刻，在PMMA上刻蚀并显影得到电极图案；
4)采用热蒸发沉积5nm Ni/50nm Au电极；电极沉积后利用丙酮溶液浸泡器件以去除PMMA；从而得到在SiO2/Si晶圆上的Bi2O2Se光电探测器；
5)将样品再次旋转涂覆PMMA，然后用电子束光刻刻蚀出图案化阵列状纳米孔；
6)利用热蒸发在上述带有阵列图案的器件上沉积MoO3-x；MoO3-x沉积后利用丙酮溶液浸泡器件以去除PMMA；从而得到在SiO2/Si晶圆上的Bi2O2Se/MoO3-x光电探测器；
其中，MoO3-x中的3-x表示氧化钼中的氧原子含量，且0＜x＜1。
进一步地，
所述步骤1)中，Bi2O2Se的制备过程具体如下：将纯度为99.999％的Bi2O3和纯度为99.999％的Bi2Se3粉末作为前驱体放置在陶瓷舟中，Bi2O3位于管式加热炉的中间，Bi2Se3位于炉的上游；将管炉密封，用机械泵抽至低真空，用100-150sccm流速的高纯氩气体冲洗；生长时间为5～30min，在550℃～750℃的温度范围内，合成厚度可控的Bi2O2Se，其中Bi2O3与Bi2Se3的用量比为2：1。
所述步骤2)中，将Bi2O2Se片从云母基板转移到SiO2/Si晶圆上的具体过程如下：
a)将PMMA(聚甲基丙烯酸甲酯)在生长样品的云母上旋涂60秒，转速3000转；然后在180℃下退火90秒，刮去云母边缘的PMMA；
b)用HF溶液腐蚀掉下面的云母，而后将悬浮的PMMA膜转移到去离子水中，用SiO2/Si衬底舀起，将其浸泡于丙酮中24小时以去除PMMA，从而将Bi2O2Se片从云母基板转移到SiO2/Si晶圆上。
所述步骤3)中，电子束光刻，具体为FEI,fp2021/12INSPECT F50。
所述步骤4)中，热蒸发，具体为TPRE-Z20-IV。
所述步骤4)中，蒸镀所用速率为
真空腔气压在10-5Pa量级。
所述步骤6)中，蒸镀所用速率为
真空腔气压在10-5Pa量级。
需要强调的是，本发明制备的器件在工作原理上显著区别于传统的光伏、光电导和热电器件[参考文献F.H.L.Koppens,T.Mueller,Ph.Avouris,A.C.Ferrari,M.S.Vitiello and M.Polini,Photodetectors based on graphene,other two-dimensional materials and hybrid systems，Nature Nanotechnology,6，2014,780-793]，该器件是基于热电子转移的方式运作。利用的是与具有等离激元共振的掺杂半导体材料MoO3-x。在器件运作过程中，MoO3-x中光激发下产生具有表面等离激元共振效应。其能量会通过非辐射弛豫传递给电子，激发出大量热电子。热电子跨越界面势垒发生转移，从而参与光电转换。基于热电子转移能够避免缺陷态束缚和复合过程的发生，从而避免响应速度的延迟以及能量损失，同时实现快速高灵敏探测。而常规器件是基于带边电荷转移运作的，容易受到缺陷态和载流子复合影响。
本发明具有以下有益效果：
1)本发明的基于MoO3-x/Bi2O2Se异质集成近红外光电传感器的制备方法，根据该方法制备的器件基于热电子转移机制运作，能够同时实现快速和高灵敏近红外探测，能够解决当前商用光伏器件灵敏度低下的问题，以及光电导器件响应速度慢的问题。这个是本专利的创新之处，是从器件运作原理方面的创新。该器件是基于热电子转移的方式运作。利用的是MoO3-x中光激发下的等离激元共振效应。能量弛豫传递给电子，激发出大量热电子。热电子跨越界面势垒发生转移，从而参与光电转换。
2)本发明制备出的基于MoO3-x/Bi2O2Se异质集成的近红外光电传感器在1310和1550nm两个重要的光纤通讯波段兼具快速响应和高灵敏特性，器件光电流稳定性长达半年。在通讯系统中具有重要的应用价值。
附图说明
图1为Bi2O2Se纳米片的扫描电子显微镜图像。
图2a为MoO2.5/Bi2O2Se异质集成近红外光电传感器示意图；
图2b为MoO2.5/Bi2O2Se异质结的扫描电子显微镜图像。
图3为利用示波器表征的MoO2.5/Bi2O2Se器件瞬态光电响应。
图4为MoO2.5/Bi2O2Se近红外传感器在1310和1550nm光通讯波段的响应度。
图5为器件的稳定性测试。
具体实施方式
为了使本发明的目的、技术方案及优点更加清晰明了，以下结合附图及实施例，对本发明进行进一步详细说明，显然，所描述的实施例仅是本发明一部分实施例，而不是全部的实施例。
制备二维硒氧化铋所需主要材料来源
实施例1
实施例1涉及基于MoO2.5/Bi2O2Se异质集成近红外光电传感器的制备方法，包括如下步骤：
1)Bi2O2Se的生长:
采用化学气相沉积法合成层状Bi2O2Se纳米片，所用基板为云母片；将Bi2O3(纯度为99.999％)和Bi2Se3(纯度为99.999％)粉末作为前驱体放置在陶瓷舟中。其中Bi2O3与Bi2Se3的用量比为2：1。Bi2O3位于管式加热炉的中间，Bi2Se3位于炉的上游。将管炉密封，用机械泵抽至低真空，用150sccm流速的高纯氩气体冲洗。生长时间为10min。在700℃的温度范围内，合成厚度可控的Bi2O2Se，厚度介于10-30nm之间，宽度介于10-100μm之间。
2)将Bi2O2Se片从云母基板转移到SiO2/Si晶圆上，具体流程如下：
a)将PMMA(聚甲基丙烯酸甲酯)在生长样品的云母上旋涂60秒，转速3000转。然后在180℃下退火90秒，刮去云母边缘的PMMA。
b)用HF溶液腐蚀掉下面的云母。而后将悬浮的PMMA膜转移到去离子水中，用SiO2/Si衬底舀起，将其浸泡于丙酮中24小时以去除PMMA。从而将Bi2O2Se片从云母基板转移到SiO2/Si晶圆上。利用扫描电子显微镜表征(SEM，FEI INSPECT F50)对生长的Bi2O2Se纳米片进行表征。如图1所示。
3)在SiO2/Si晶圆上旋涂光刻胶(聚甲基丙烯酸甲酯，PMMA)，采用电子束光刻(FEI,fp2021/12INSPECT F50)在PMMA上刻蚀并显影得到电极图案。
4)采用热蒸发(TPRE-Z20-IV)沉积5nm Ni/50nm Au电极。蒸镀所用速率为
真空腔气压在10-5Pa量级。电极沉积后利用丙酮溶液浸泡器件以去除PMMA。从而得到在SiO2/Si晶圆上的Bi2O2Se光电探测器；
5)将样品再次旋转涂覆PMMA，然后用电子束光刻刻蚀出图案化阵列状纳米孔；
6)利用热蒸发在上述带有阵列图案的器件上沉积MoO3-x。蒸镀所用速率为
真空腔气压在10-5Pa量级。MoO3-x沉积后利用丙酮溶液浸泡器件以去除PMMA。从而得到在SiO2/Si晶圆上的Bi2O2Se/MoO3-x光电探测器。
图2a为MoO2.5/Bi2O2Se异质集成近红外光电传感器示意图。
图2b为MoO2.5/Bi2O2Se异质结的扫描电子显微镜图像。
4.器件性能表征：
a)利用脉冲激光器作为光源，示波器读取器件的光响应。利用e指数拟合得到器件的上升沿光电响应时间为～400ns。
b)利用Keithley 2612测试器件的光响应度。在1310和1550nm的两个重要光通讯波段，器件的响应度分别高达～24A/W和1A/W。
图3为利用示波器表征的MoO2.5/Bi2O2Se器件瞬态光电响应。
图4为MoO2.5/Bi2O2Se近红外传感器在1310和1550nm光通讯波段的响应度。从图4可以看出：MoO2.5/Bi2O2Se传感器的灵敏度比单纯Bi2O2Se器件提升10倍左右。
图5为器件的稳定性测试，从图5可以看出：实验发现器件在6个月后仍然保持较好的光响应。
以上所述仅为本发明的较佳实施例，并不用于限制本发明，凡在本发明的设计构思之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。
Claims (7)
1.一种基于MoO3-x/Bi2O2Se异质集成的近红外光电传感器的制备方法，其特征在于，包括如下步骤；
1）采用化学气相沉积法合成层状Bi2O2Se纳米片，所用基板为云母片；
2）将Bi2O2Se片从云母基板转移到SiO2/Si晶圆上，以用于后续在标准半导体工艺的晶圆上制备光电传感器；
3）在SiO2/Si晶圆上旋涂光刻胶聚甲基丙烯酸甲酯，即PMMA，采用电子束光刻，在PMMA上刻蚀并显影得到电极图案；
4）采用热蒸发沉积5 nm Ni /50 nm Au电极；电极沉积后利用丙酮溶液浸泡器件以去除PMMA；从而得到在SiO2/Si晶圆上的Bi2O2Se光电探测器；
5）将样品再次旋转涂覆PMMA，然后用电子束光刻刻蚀出图案化阵列状纳米孔；
6）利用热蒸发在上述带有阵列图案的器件上沉积MoO3-x；MoO3-x沉积后利用丙酮溶液浸泡器件以去除PMMA；从而得到在SiO2/Si晶圆上的Bi2O2Se/MoO3-x光电探测器；
其中，MoO3-x中的 3-x表示氧化钼中的氧原子含量，且0＜x＜1。
2.根据权利要求1所述的制备方法，其特征在于，所述步骤1）中，Bi2O2Se的制备过程具体如下：将纯度为99.999%的Bi2O3和纯度为99.999%的Bi2Se3粉末作为前驱体放置在陶瓷舟中，Bi2O3位于管式加热炉的中间，Bi2Se3位于炉的上游；将管炉密封，用机械泵抽至低真空，用100-150 sccm流速的高纯氩气体冲洗；生长时间为5 ~ 30 min，在550℃~ 750℃的温度范围内，合成厚度可控的Bi2O2Se，其中Bi2O3 与Bi2Se3的用量比为2：1。
3.根据权利要求1所述的制备方法，其特征在于，所述步骤2）中，将Bi2O2Se片从云母基板转移到SiO2/Si晶圆上的具体过程如下：
a) 将PMMA(聚甲基丙烯酸甲酯)在生长样品的云母上旋涂60秒，转速3000转；然后在180℃下退火90 秒，刮去云母边缘的PMMA；
b) 用HF溶液腐蚀掉下面的云母，而后将悬浮的PMMA膜转移到去离子水中，用SiO2/Si衬底舀起，将其浸泡于丙酮中24小时以去除PMMA，从而将Bi2O2Se片从云母基板转移到SiO2/Si晶圆上。
4.根据权利要求1所述的制备方法，其特征在于，所述步骤3）中，电子束光刻，具体为FEI, fp2021 /12 INSPECT F50。
5.根据权利要求1所述的制备方法，其特征在于，所述步骤4）中，热蒸发，具体为TPRE-Z20-IV。
6.根据权利要求1所述的制备方法，其特征在于，所述步骤4）中，蒸镀所用速率为0.3-0.5 Å/s, 真空腔气压在10-5 Pa量级。
7.根据权利要求1所述的制备方法，其特征在于，所述步骤6）中，蒸镀所用速率为0.4-0.5 Å/s, 真空腔气压在10-5 Pa量级。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211683606.0A CN116053338A (zh) | 2022-12-27 | 2022-12-27 | 一种基于MoO3-x/Bi2O2Se异质集成的近红外光电传感器的制备方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211683606.0A CN116053338A (zh) | 2022-12-27 | 2022-12-27 | 一种基于MoO3-x/Bi2O2Se异质集成的近红外光电传感器的制备方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116053338A true CN116053338A (zh) | 2023-05-02 |
Family
ID=86117448
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211683606.0A Pending CN116053338A (zh) | 2022-12-27 | 2022-12-27 | 一种基于MoO3-x/Bi2O2Se异质集成的近红外光电传感器的制备方法 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116053338A (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117096206A (zh) * | 2023-10-17 | 2023-11-21 | 北京大学 | 一种基于铋氧硒-钙钛矿异质结的光感算一体器件及其制备方法 |
-
2022
- 2022-12-27 CN CN202211683606.0A patent/CN116053338A/zh active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117096206A (zh) * | 2023-10-17 | 2023-11-21 | 北京大学 | 一种基于铋氧硒-钙钛矿异质结的光感算一体器件及其制备方法 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101558801B1 (ko) | 그래핀-실리콘 양자점 하이브리드 구조를 이용한 포토 다이오드 및 그 제조방법 | |
| TWI705577B (zh) | 二維電子元件與相關製造方法 | |
| Lu et al. | Epitaxial growth of large-scale In 2 S 3 nanoflakes and the construction of a high performance In 2 S 3/Si photodetector | |
| Choi et al. | Lithographic fabrication of point contact with Al2O3 rear-surface-passivated and ultra-thin Cu (In, Ga) Se2 solar cells | |
| CN111725348B (zh) | 高光响应TiO2/MoS2异质结可见光探测器及制备 | |
| CN116053338A (zh) | 一种基于MoO3-x/Bi2O2Se异质集成的近红外光电传感器的制备方法 | |
| CN113013263A (zh) | 一种增强型二维半导体光电探测器及其制备方法 | |
| CN116314386A (zh) | 混维范德瓦尔斯异质结光电探测器及其制备方法 | |
| Abdul-Hameed et al. | Fabrication of a high sensitivity and fast response self-powered photosensor based on a core-shell silicon nanowire homojunction | |
| Zhao et al. | Ultrasensitive Self-Powered Deep-Ultraviolet Photodetector Based on In Situ Epitaxial Ga₂O₃/Bi₂Se₃ Heterojunction | |
| CN110190150A (zh) | 基于硒化钯薄膜/硅锥包裹结构异质结的宽波段高性能光电探测器及其制作方法 | |
| CN113964230A (zh) | 一种硫硒化亚锡纳米片/GaAs异质结光电二极管及其制备方法和应用 | |
| CN116314424A (zh) | 多波段紫外光电探测器及其制备方法 | |
| CN114497248A (zh) | 一种基于混维Sn-CdS/碲化钼异质结的光电探测器及其制备方法 | |
| Gupta et al. | Ultraviolet light detection properties of ZnO/AlN/Si heterojunction diodes | |
| Srivastava et al. | Silicon nanowire arrays based “black silicon” solar cells | |
| Xu et al. | Band gap engineering of amorphous MgSnO film for deep-ultraviolet photodetection | |
| CN114420784B (zh) | 一种基于二硒化铂和硅的异质结结构及光电探测器、及其制备方法 | |
| CN116110985B (zh) | 集成非对称F-P腔的InSe基日盲紫外光电探测器 | |
| CN216648333U (zh) | 一种基于二硒化铂和硅的异质结结构的光电探测器 | |
| CN114759104B (zh) | 基于ⅱ型范德华异质结近红外偏振光电探测器及其制备方法 | |
| CN116705894A (zh) | 一种自驱动光电探测器及其制备方法和应用 | |
| CN117976759A (zh) | 一种范德华异质结光电探测器及其制备方法和应用 | |
| CN117727816A (zh) | CuOx/WSe2异质结光电探测器及其制备方法 | |
| Veeramalai et al. | Photoelectronic properties of antimony selenide nanowire synthesized by hydrothermal method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |