CN116018900A - 自旋轨道矩磁存储器及其制作方法、存储设备 - Google Patents
自旋轨道矩磁存储器及其制作方法、存储设备 Download PDFInfo
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- CN116018900A CN116018900A CN202080103449.4A CN202080103449A CN116018900A CN 116018900 A CN116018900 A CN 116018900A CN 202080103449 A CN202080103449 A CN 202080103449A CN 116018900 A CN116018900 A CN 116018900A
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- Prior art keywords
- spin
- orbit torque
- via hole
- layer
- magnetic memory
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 153
- 230000015654 memory Effects 0.000 title claims abstract description 100
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000003302 ferromagnetic material Substances 0.000 claims abstract description 15
- 230000005641 tunneling Effects 0.000 claims abstract description 7
- 229910017052 cobalt Inorganic materials 0.000 claims description 7
- 239000010941 cobalt Substances 0.000 claims description 7
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 238000003860 storage Methods 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 143
- 230000005415 magnetization Effects 0.000 description 23
- 238000010586 diagram Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000007769 metal material Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000005294 ferromagnetic effect Effects 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910001385 heavy metal Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- YVRGRDDGRSFXCH-UHFFFAOYSA-N magnesium;dioxido(oxo)titanium Chemical compound [Mg+2].[O-][Ti]([O-])=O YVRGRDDGRSFXCH-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- ZDZZPLGHBXACDA-UHFFFAOYSA-N [B].[Fe].[Co] Chemical compound [B].[Fe].[Co] ZDZZPLGHBXACDA-UHFFFAOYSA-N 0.000 description 1
- DWRRMEFDDYNUCG-UHFFFAOYSA-N [Gd+3].[O-2].[Mg+2] Chemical compound [Gd+3].[O-2].[Mg+2] DWRRMEFDDYNUCG-UHFFFAOYSA-N 0.000 description 1
- MRPWWVMHWSDJEH-UHFFFAOYSA-N antimony telluride Chemical compound [SbH3+3].[SbH3+3].[TeH2-2].[TeH2-2].[TeH2-2] MRPWWVMHWSDJEH-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- FQMNUIZEFUVPNU-UHFFFAOYSA-N cobalt iron Chemical compound [Fe].[Co].[Co] FQMNUIZEFUVPNU-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- OMEPJWROJCQMMU-UHFFFAOYSA-N selanylidenebismuth;selenium Chemical compound [Se].[Bi]=[Se].[Bi]=[Se] OMEPJWROJCQMMU-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
Abstract
本申请提供了一种自旋轨道矩磁存储器及其制作方法、存储设备，涉及存储器领域，提供一种无需外部磁场的自旋轨道矩磁存储器；该自旋轨道矩磁存储器包括自旋轨道矩提供层和垂直磁性隧道结；磁性隧道结包括层叠设置的自由层、遂穿层和参考层；自旋轨道矩提供层包括相对的第一表面和第二表面；自由层设置在自旋轨道矩提供层的第一表面上；自旋轨道矩磁存储器还包括设置在自旋轨道矩提供层的第一表面或第二表面上的绝缘介质层，绝缘介质层中在位于垂直磁性隧道结相对的两侧区域设置有第一过孔和第二过孔，且第一个过孔和第二过孔中填充有铁磁材料。
Description
PCT国内申请，说明书已公开。
Claims (10)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2020/127534 WO2022095033A1 (zh) | 2020-11-09 | 2020-11-09 | 自旋轨道矩磁存储器及其制作方法、存储设备 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN116018900A true CN116018900A (zh) | 2023-04-25 |
| CN116018900A8 CN116018900A8 (zh) | 2024-05-14 |
Family
ID=81456929
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202080103449.4A Pending CN116018900A (zh) | 2020-11-09 | 2020-11-09 | 自旋轨道矩磁存储器及其制作方法、存储设备 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN116018900A (zh) |
| WO (1) | WO2022095033A1 (zh) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2652791B1 (en) * | 2010-12-17 | 2017-03-01 | Everspin Technologies, Inc. | Magnetic random access memory integration having improved scaling |
| US8928100B2 (en) * | 2011-06-24 | 2015-01-06 | International Business Machines Corporation | Spin transfer torque cell for magnetic random access memory |
| EP3695405A1 (en) * | 2017-10-13 | 2020-08-19 | Everspin Technologies, Inc. | Perpendicular magnetic memory using spin-orbit torque |
| CN111490156A (zh) * | 2020-04-21 | 2020-08-04 | 浙江驰拓科技有限公司 | 自旋轨道力矩磁存储器件及其制备方法 |
-
2020
- 2020-11-09 WO PCT/CN2020/127534 patent/WO2022095033A1/zh active Application Filing
- 2020-11-09 CN CN202080103449.4A patent/CN116018900A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022095033A1 (zh) | 2022-05-12 |
| CN116018900A8 (zh) | 2024-05-14 |
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| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CI02 | Correction of invention patent application |
Correction item: PCT international application to national stage day Correct: 2023.02.24 False: 2023.02.23 Number: 17-01 Volume: 39 Correction item: PCT international application to national stage day Correct: 2023.02.24 False: 2023.02.23 Number: 17-01 Page: The title page Volume: 39 |
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| CI02 | Correction of invention patent application |