CN115989637A - 弹性波装置 - Google Patents

弹性波装置 Download PDF

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Publication number
CN115989637A
CN115989637A CN202180052339.4A CN202180052339A CN115989637A CN 115989637 A CN115989637 A CN 115989637A CN 202180052339 A CN202180052339 A CN 202180052339A CN 115989637 A CN115989637 A CN 115989637A
Authority
CN
China
Prior art keywords
piezoelectric film
density
elastic wave
region
wave device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180052339.4A
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English (en)
Chinese (zh)
Inventor
大门克也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Publication of CN115989637A publication Critical patent/CN115989637A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H03H9/14538—Formation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/176—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of ceramic material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
CN202180052339.4A 2020-09-03 2021-08-31 弹性波装置 Pending CN115989637A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020148279 2020-09-03
JP2020-148279 2020-09-03
PCT/JP2021/031896 WO2022050260A1 (ja) 2020-09-03 2021-08-31 弾性波装置

Publications (1)

Publication Number Publication Date
CN115989637A true CN115989637A (zh) 2023-04-18

Family

ID=80490990

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180052339.4A Pending CN115989637A (zh) 2020-09-03 2021-08-31 弹性波装置

Country Status (5)

Country Link
US (1) US20230208391A1 (https=)
JP (1) JP7582315B2 (https=)
KR (1) KR102820054B1 (https=)
CN (1) CN115989637A (https=)
WO (1) WO2022050260A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102851822B1 (ko) * 2023-10-13 2025-08-28 (주)와이솔 표면 탄성파 소자 및 그 제조 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080042517A1 (en) * 2006-08-15 2008-02-21 Robert Bruce Stokes Electric field control of surface acoustic wave velocity
CN102946236A (zh) * 2012-10-22 2013-02-27 华中科技大学 一种可调薄膜体声波谐振器及其制备方法
CN104737449A (zh) * 2012-10-22 2015-06-24 高通Mems科技公司 复合扩张模式谐振器
CN111448757A (zh) * 2017-12-13 2020-07-24 株式会社村田制作所 电子部件

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3163679B2 (ja) * 1991-09-27 2001-05-08 株式会社村田製作所 弾性表面波基板
JP3880150B2 (ja) * 1997-06-02 2007-02-14 松下電器産業株式会社 弾性表面波素子
JP3829644B2 (ja) * 2000-05-01 2006-10-04 株式会社村田製作所 表面波装置、横波トランスデューサー及び縦波トランスデューサーの製造方法
US8513863B2 (en) * 2009-06-11 2013-08-20 Qualcomm Mems Technologies, Inc. Piezoelectric resonator with two layers
CN103262410B (zh) 2010-12-24 2016-08-10 株式会社村田制作所 弹性波装置及其制造方法
JP2013214954A (ja) * 2012-03-07 2013-10-17 Taiyo Yuden Co Ltd 共振子、周波数フィルタ、デュプレクサ、電子機器及び共振子の製造方法
JP6360847B2 (ja) * 2016-03-18 2018-07-18 太陽誘電株式会社 弾性波デバイス
JP2018182615A (ja) * 2017-04-18 2018-11-15 株式会社村田製作所 弾性波装置
JP6835038B2 (ja) * 2018-06-18 2021-02-24 株式会社村田製作所 弾性波装置及び高周波フロントエンド回路

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080042517A1 (en) * 2006-08-15 2008-02-21 Robert Bruce Stokes Electric field control of surface acoustic wave velocity
CN102946236A (zh) * 2012-10-22 2013-02-27 华中科技大学 一种可调薄膜体声波谐振器及其制备方法
CN104737449A (zh) * 2012-10-22 2015-06-24 高通Mems科技公司 复合扩张模式谐振器
CN111448757A (zh) * 2017-12-13 2020-07-24 株式会社村田制作所 电子部件

Also Published As

Publication number Publication date
JP7582315B2 (ja) 2024-11-13
WO2022050260A1 (ja) 2022-03-10
US20230208391A1 (en) 2023-06-29
KR20230036155A (ko) 2023-03-14
JPWO2022050260A1 (https=) 2022-03-10
KR102820054B1 (ko) 2025-06-12

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