CN115960601A - 一种量子点发光层及其制备方法和量子点发光二极管器件 - Google Patents
一种量子点发光层及其制备方法和量子点发光二极管器件 Download PDFInfo
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- CN115960601A CN115960601A CN202111172956.6A CN202111172956A CN115960601A CN 115960601 A CN115960601 A CN 115960601A CN 202111172956 A CN202111172956 A CN 202111172956A CN 115960601 A CN115960601 A CN 115960601A
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- quantum dot
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- Power Engineering (AREA)
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- Crystallography & Structural Chemistry (AREA)
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CN202111172956.6A CN115960601A (zh) | 2021-10-08 | 2021-10-08 | 一种量子点发光层及其制备方法和量子点发光二极管器件 |
PCT/CN2022/118788 WO2023056829A1 (fr) | 2021-10-08 | 2022-09-14 | Couche électroluminescente à points quantiques, procédé de préparation de couche électroluminescente à points quantiques et dispositif à diodes électroluminescentes à points quantiques |
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CN202111172956.6A CN115960601A (zh) | 2021-10-08 | 2021-10-08 | 一种量子点发光层及其制备方法和量子点发光二极管器件 |
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WO (1) | WO2023056829A1 (fr) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1988192A (zh) * | 2006-12-12 | 2007-06-27 | 天津理工大学 | 柔性单层白光量子点电致发光器件及其制备方法 |
CN103772872B (zh) * | 2013-12-27 | 2016-06-01 | Tcl集团股份有限公司 | 量子点/丙烯酸酯聚合物纳米晶体复合物及制备方法和彩色转化膜 |
CN106585061B (zh) * | 2016-12-06 | 2018-08-17 | 厦门世纳芯科技有限公司 | 一种高质量量子点荧光薄膜材料及其制备方法 |
CN109962170B (zh) * | 2017-12-26 | 2021-04-13 | Tcl科技集团股份有限公司 | 一种薄膜及其制备方法与qled器件 |
CN112186117B (zh) * | 2020-11-26 | 2021-03-23 | 江汉大学 | 一种交流驱动型量子点发光二极管及其制备方法 |
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2021
- 2021-10-08 CN CN202111172956.6A patent/CN115960601A/zh active Pending
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- 2022-09-14 WO PCT/CN2022/118788 patent/WO2023056829A1/fr active Application Filing
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