CN115948675A - Ternary formula of bonding silver wire and preparation method - Google Patents
Ternary formula of bonding silver wire and preparation method Download PDFInfo
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- CN115948675A CN115948675A CN202211553784.1A CN202211553784A CN115948675A CN 115948675 A CN115948675 A CN 115948675A CN 202211553784 A CN202211553784 A CN 202211553784A CN 115948675 A CN115948675 A CN 115948675A
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- wire
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 44
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 229910052709 silver Inorganic materials 0.000 claims abstract description 22
- 239000004332 silver Substances 0.000 claims abstract description 22
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 14
- 239000000956 alloy Substances 0.000 claims abstract description 14
- 241001226615 Asphodelus albus Species 0.000 claims abstract description 13
- 238000005266 casting Methods 0.000 claims abstract description 12
- 238000012360 testing method Methods 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052802 copper Inorganic materials 0.000 claims abstract description 8
- 239000010949 copper Substances 0.000 claims abstract description 8
- 229910052738 indium Inorganic materials 0.000 claims abstract description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000004806 packaging method and process Methods 0.000 claims abstract description 6
- 230000008569 process Effects 0.000 claims abstract description 6
- 238000010791 quenching Methods 0.000 claims abstract description 4
- 230000000171 quenching effect Effects 0.000 claims abstract description 4
- 238000005496 tempering Methods 0.000 claims abstract description 4
- 238000004804 winding Methods 0.000 claims abstract description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000009472 formulation Methods 0.000 claims 14
- 239000000203 mixture Substances 0.000 claims 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 4
- 230000005012 migration Effects 0.000 description 4
- 238000013508 migration Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000004073 vulcanization Methods 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- -1 silver ions Chemical class 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Abstract
The invention relates to the technical field of chip packaging, and discloses a ternary formula of bonding silver wires and a preparation method thereof, wherein the preparation method comprises the following steps: s1, putting high-purity silver (98-99%) in a specific proportion, high-purity copper (1-2%) and high-purity indium (0.1-0.5%) into a vacuum casting furnace together, putting the elements into the vacuum casting furnace, and performing high-temperature casting to obtain an alloy silver rod with a specific diameter; s2, stretching the alloy silver rod through a plurality of groups of dies, and performing intermediate normalizing at a certain diameter by using proper temperature in the stretching process; s3, the intermediate normalized wire is stretched to the semi-finished wire again; and S4, after the semi-finished wire is subjected to specific temperature normalizing, water-oil quenching and low-temperature tempering, testing the mechanical properties of the semi-finished wire, and after the testing is finished, winding and packaging the semi-finished wire into the finished wire.
Description
Technical Field
The invention relates to the technical field of chip packaging, in particular to a ternary formula of bonding silver wires and a preparation method thereof.
Background
In the application of the current LED semiconductor industry, silver wires are gradually used as leads for connecting a substrate and a chip for reducing cost of products at middle and low ends, however, pure silver wires are very easy to migrate silver ions under a humid environment with voltage to cause short circuit, so that components are failed, and the pure silver wires are very easy to react with sulfur in the air, so that the pure silver wires are low in vulcanization resistance degree, and under the constraint based on cost, silver alloy wires with excellent performance need to be manufactured at present, so that the requirements of middle and low end customers are met.
Disclosure of Invention
Technical problem to be solved
Aiming at the defects of the prior art, the invention provides a ternary formula of bonding silver wires and a preparation method thereof, and solves the problems in the background art.
(II) technical scheme
In order to achieve the purpose, the invention provides the following technical scheme: a ternary formula of bonding silver wires and a preparation method thereof comprise the following steps:
s1, putting high-purity silver (98-99%) in a specific proportion, high-purity copper (1-2%) and high-purity indium (0.1-0.5%) into a vacuum casting furnace together, putting the elements into the vacuum casting furnace, and performing high-temperature casting to obtain an alloy silver rod with a specific diameter;
s2, stretching the alloy silver rod through a plurality of groups of dies, and performing intermediate normalizing at a certain diameter by using proper temperature in the stretching process;
s3, the intermediate normalized wire is stretched to the semi-finished wire again;
and S4, after the semi-finished wire is subjected to specific temperature normalizing, water-oil quenching and low-temperature tempering, testing the mechanical property of the semi-finished wire, and after the testing is finished, winding and packaging the semi-finished wire into a finished wire.
Preferably, in the step S1, the purity of silver, copper and indium is required to be 99.999% or more.
Preferably, in the step S1, the diameter of the alloy silver rod is 5mm-8mm.
Preferably, in the step S2, the intermediate normalizing line diameter is 30 μm to 120 μm.
Preferably, in the step S2, the intermediate normalizing temperature is 300 ℃ to 500 ℃.
Preferably, in the step S2, the intermediate annealing speed is 50m/min-80m/min.
Preferably, the normalizing in step S2 and step S4 is performed under the protection of nitrogen.
Preferably, in the step S4, the finished wire has a wire diameter of 0.8mil, 0.9mil, or 1.0mil.
(III) advantageous effects
The invention provides a ternary formula of bonding silver wires and a preparation method thereof, and the ternary formula has the following beneficial effects:
(1) Compared with pure silver wires, the silver ion migration speed can be effectively inhibited by adding copper and indium, and failure of components due to short circuit caused by silver ion migration is prevented.
(2) Compared with pure silver wires, the silver wire can reduce the reaction rate of the reaction with sulfur in the air, thereby improving the anti-vulcanization time.
Drawings
FIG. 1 is a schematic flow diagram of the present invention;
FIG. 2 is a photograph of a silver ion migration test according to the present invention;
FIG. 3 is silver ion migration test data in accordance with the present invention;
FIG. 4 is a photograph showing an experiment of the vulcanization process of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1 to 4, the present invention provides a preparation method: a ternary formula of bonding silver wires and a preparation method thereof comprise the following steps:
s1, putting high-purity silver (98-99%) in a specific proportion, high-purity copper (1-2%) and high-purity indium (0.1-0.5%) into a vacuum casting furnace together, putting the elements into the vacuum casting furnace, and performing high-temperature casting to obtain an alloy silver rod with a specific diameter;
s2, stretching the alloy silver rod through a plurality of groups of dies, and performing intermediate normalizing at a certain diameter by using proper temperature in the stretching process;
s3, the intermediate normalized wire is stretched to the semi-finished wire again;
and S4, after the semi-finished wire is subjected to specific temperature normalizing, water-oil quenching and low-temperature tempering, testing the mechanical property of the semi-finished wire, and after the testing is finished, winding and packaging the semi-finished wire into a finished wire.
The purity of the silver, copper and indium for preparing the silver alloy is required to be more than 99.999 percent;
the diameter of the alloy silver rod cast at high temperature is 5mm-8mm;
the alloy silver rod is subjected to intermediate normalizing at the temperature of 300-500 ℃;
the intermediate annealing speed of the alloy silver bar is 50m/min-80m/min;
and (4) carrying out intermediate normalizing in the step S2 and the step S4 on the alloy silver rod under the protection of nitrogen.
The wire diameter of the finished wire in step S4 is 0.8mil, 0.9mil or 1.0mil.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (8)
1. A ternary formula of bonding silver wires and a preparation method thereof are characterized in that: the method comprises the following steps:
s1, putting high-purity silver (98-99%) in a specific proportion, high-purity copper (1-2%) and high-purity indium (0.1-0.5%) into a vacuum casting furnace together, putting the elements into the vacuum casting furnace, and performing high-temperature casting to obtain an alloy silver rod with a specific diameter;
s2, stretching the alloy silver rod through a plurality of groups of dies, and performing intermediate normalizing at a certain diameter by using proper temperature in the stretching process;
s3, the intermediate normalized wire is stretched to the semi-finished wire again;
and S4, after normalizing at a specific temperature, quenching in water and oil and tempering at a low temperature, testing the mechanical property of the semi-finished wire, winding after the test is finished, and packaging to obtain the finished wire.
2. The ternary formulation of bonding silver wire and the preparation method thereof according to claim 1, wherein the ternary formulation comprises: in the step S1, the purity of silver, copper, and indium must be 99.999% or more.
3. The ternary formulation of bonding silver wire and the preparation method thereof according to claim 1, wherein the ternary formulation comprises: in the step S1, the diameter of the alloy silver rod is 5mm-8mm.
4. The ternary formulation of bonding silver wire and the preparation method thereof according to claim 1, wherein the ternary formulation comprises: in the step S2, the diameter of the intermediate normalizing line is 30-120 μm.
5. The ternary formulation of bonding silver wire and the preparation method thereof according to claim 1, wherein the ternary formulation comprises: in the step S2, the intermediate normalizing temperature is 300-500 ℃.
6. The ternary formulation of bonding silver wire and the preparation method thereof according to claim 1, wherein the ternary formulation comprises: in the step S2, the intermediate annealing speed is 50m/min-80m/min.
7. The ternary formulation of bonding silver wire and the preparation method thereof according to claim 1, wherein the ternary formulation comprises: and normalizing in the step S2 and the step S4 under the protection of nitrogen.
8. The ternary formulation of bonding silver wire and the preparation method thereof according to claim 1, wherein the ternary formulation comprises: in the step S4, the wire diameter of the finished wire is 0.8mil, 0.9mil, 1.0mil.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211553784.1A CN115948675A (en) | 2022-12-06 | 2022-12-06 | Ternary formula of bonding silver wire and preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211553784.1A CN115948675A (en) | 2022-12-06 | 2022-12-06 | Ternary formula of bonding silver wire and preparation method |
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| Publication Number | Publication Date |
|---|---|
| CN115948675A true CN115948675A (en) | 2023-04-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211553784.1A Pending CN115948675A (en) | 2022-12-06 | 2022-12-06 | Ternary formula of bonding silver wire and preparation method |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102437136A (en) * | 2011-11-16 | 2012-05-02 | 浙江佳博科技股份有限公司 | Bonding alloy wire and production process thereof |
| CN105390404A (en) * | 2015-10-30 | 2016-03-09 | 广东佳博电子科技有限公司 | Method for preparing silver-based bonding wire |
| CN105492637A (en) * | 2014-07-10 | 2016-04-13 | 新日铁住金高新材料株式会社 | Bonding wire for semiconductor device |
| US20160376684A1 (en) * | 2015-06-25 | 2016-12-29 | Raymond Wang | Silver alloy material and method for manufacturing the silver alloy material |
| CN110648989A (en) * | 2019-10-11 | 2020-01-03 | 重庆新启派电子科技有限公司 | Bonding wire for chip ball planting |
| CN112195360A (en) * | 2020-04-15 | 2021-01-08 | 中国科学院金属研究所 | Preparation method of ultra-fine electronic wire rod made of ultra-high-tension rare earth copper-silver alloy |
| CN113241303A (en) * | 2021-05-19 | 2021-08-10 | 合肥矽格玛应用材料有限公司 | Packaging bonding platinum wire and preparation method thereof |
-
2022
- 2022-12-06 CN CN202211553784.1A patent/CN115948675A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102437136A (en) * | 2011-11-16 | 2012-05-02 | 浙江佳博科技股份有限公司 | Bonding alloy wire and production process thereof |
| CN105492637A (en) * | 2014-07-10 | 2016-04-13 | 新日铁住金高新材料株式会社 | Bonding wire for semiconductor device |
| US20160376684A1 (en) * | 2015-06-25 | 2016-12-29 | Raymond Wang | Silver alloy material and method for manufacturing the silver alloy material |
| CN105390404A (en) * | 2015-10-30 | 2016-03-09 | 广东佳博电子科技有限公司 | Method for preparing silver-based bonding wire |
| CN110648989A (en) * | 2019-10-11 | 2020-01-03 | 重庆新启派电子科技有限公司 | Bonding wire for chip ball planting |
| CN112195360A (en) * | 2020-04-15 | 2021-01-08 | 中国科学院金属研究所 | Preparation method of ultra-fine electronic wire rod made of ultra-high-tension rare earth copper-silver alloy |
| CN113241303A (en) * | 2021-05-19 | 2021-08-10 | 合肥矽格玛应用材料有限公司 | Packaging bonding platinum wire and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| R.H. NADA: ""Precipitation kinetics in Ag-2 wt% Cu and Ag-2 wt% Cu-0.5 wt% In alloys during transformation"", 《PHYSICA B: CONDENSED MATTER》, vol. 349, no. 1, pages 166 - 173 * |
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