CN115867969A - 一种存储数据读取电路及存储器 - Google Patents

一种存储数据读取电路及存储器 Download PDF

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Publication number
CN115867969A
CN115867969A CN202080103124.6A CN202080103124A CN115867969A CN 115867969 A CN115867969 A CN 115867969A CN 202080103124 A CN202080103124 A CN 202080103124A CN 115867969 A CN115867969 A CN 115867969A
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CN
China
Prior art keywords
transistor
data reading
output
current mirror
voltage
Prior art date
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Pending
Application number
CN202080103124.6A
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English (en)
Inventor
蔡江铮
布明恩
欧阳晟
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Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
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Publication date
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Publication of CN115867969A publication Critical patent/CN115867969A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2273—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/08—Control thereof
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0061—Timing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G11C2013/0045—Read using current through the cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G11C2013/0054—Read is performed on a reference element, e.g. cell, and the reference sensed value is used to compare the sensed value of the selected cell

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)

Abstract

一种存储数据读取电路及存储器，涉及集成电路技术领域，可以改善存储数据读取电路读取数据不准确的问题。该存储数据读取电路(01)包括第一电流镜(301)、第一电阻(303)和电压放大器(40)；所述第一电流镜(301)的输入端(a)与存储单元的第一数据读取端(p)连接，所述第一电流镜(301)的输出端(b)通过所述第一电阻(303)连接至接地端；所述第一电流镜(301)用于将所述存储单元的第一数据读取端(p)输出的电流镜像放大为第一镜像电流(IRO)，并将所述第一镜像电流(IRO)输出至所述第一电流镜(301)的输出端(b)；所述电压放大器(40)的第一输入端(c)与所述第一电流镜(301)的输出端(b)连接，所述电压放大器(40)的第二输入端(d)用于接收参考电压(Iref)；所述电压放大器(40)的输出端(e)连接至所述存储数据读取电路(01)的输出端。

Description

PCT国内申请，说明书已公开。

Claims (21)

  1. PCT国内申请，权利要求书已公开。
CN202080103124.6A 2020-11-20 2020-11-20 一种存储数据读取电路及存储器 Pending CN115867969A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2020/130442 WO2022104704A1 (zh) 2020-11-20 2020-11-20 一种存储数据读取电路及存储器

Publications (1)

Publication Number Publication Date
CN115867969A true CN115867969A (zh) 2023-03-28

Family

ID=81708199

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080103124.6A Pending CN115867969A (zh) 2020-11-20 2020-11-20 一种存储数据读取电路及存储器

Country Status (3)

Country Link
EP (1) EP4231299A4 (zh)
CN (1) CN115867969A (zh)
WO (1) WO2022104704A1 (zh)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002230989A (ja) * 2001-01-31 2002-08-16 Mitsubishi Electric Corp 不揮発性半導体記憶装置
CN100440377C (zh) * 2006-04-28 2008-12-03 清华大学 一种应用于快闪存储器的读出放大器电路
US7483306B2 (en) * 2007-02-02 2009-01-27 Macronix International Co., Ltd. Fast and accurate sensing amplifier for low voltage semiconductor memory
US7813166B2 (en) * 2008-06-30 2010-10-12 Qualcomm Incorporated Controlled value reference signal of resistance based memory circuit
CN103077745A (zh) * 2012-12-24 2013-05-01 上海宏力半导体制造有限公司 存储单元的读取电路和存储器
CN104252879A (zh) * 2014-09-26 2014-12-31 中国科学院微电子研究所 一种阻变存储器读出电路
US10181358B2 (en) * 2016-10-26 2019-01-15 Mediatek Inc. Sense amplifier

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Publication number Publication date
EP4231299A1 (en) 2023-08-23
EP4231299A4 (en) 2023-12-06
WO2022104704A1 (zh) 2022-05-27

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