CN115843390A - 一种铁电存储器及电子设备 - Google Patents
一种铁电存储器及电子设备 Download PDFInfo
- Publication number
- CN115843390A CN115843390A CN202080103171.0A CN202080103171A CN115843390A CN 115843390 A CN115843390 A CN 115843390A CN 202080103171 A CN202080103171 A CN 202080103171A CN 115843390 A CN115843390 A CN 115843390A
- Authority
- CN
- China
- Prior art keywords
- ferroelectric
- memory
- electrode
- control layer
- switch control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015654 memory Effects 0.000 title claims abstract description 221
- 239000000463 material Substances 0.000 claims abstract description 66
- 230000010287 polarization Effects 0.000 claims abstract description 41
- 238000003860 storage Methods 0.000 claims abstract description 20
- 230000000149 penetrating effect Effects 0.000 claims abstract description 6
- 239000002923 metal particle Substances 0.000 claims description 23
- 239000002131 composite material Substances 0.000 claims description 16
- 238000000605 extraction Methods 0.000 claims description 15
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 14
- 238000002955 isolation Methods 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 10
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 8
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 8
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 8
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 6
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 6
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 6
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 6
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 6
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 6
- 239000005751 Copper oxide Substances 0.000 claims description 4
- 229910000431 copper oxide Inorganic materials 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 31
- 239000010410 layer Substances 0.000 description 70
- 230000005684 electric field Effects 0.000 description 40
- 239000010408 film Substances 0.000 description 18
- 238000000034 method Methods 0.000 description 15
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 15
- 239000010936 titanium Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 239000007769 metal material Substances 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 6
- 125000006850 spacer group Chemical group 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 229910052741 iridium Inorganic materials 0.000 description 5
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 3
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 229910000457 iridium oxide Inorganic materials 0.000 description 3
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 3
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 238000013473 artificial intelligence Methods 0.000 description 1
- 238000013528 artificial neural network Methods 0.000 description 1
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- -1 tungsten nitride Chemical class 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
Abstract
一种铁电存储器(1)及电子设备,铁电存储器(1)包括:至少一个存储单元(10);存储单元(10)包括:外侧电极(101)、中心电极(102),以及铁电结构(103);铁电结构(103)包括:铁电材料,以及在第一方向(F1)上贯穿铁电材料的通孔(U);中心电极(102)为位于通孔(U)内的条状结构;外侧电极(101)包围部分铁电结构(103);铁电结构(103)的初始电极化方向(T)为平行于第一平面的任一方向,第一平面为垂直于第一方向(F1)且穿过外侧电极(101)的平面。铁电存储器(1)将外侧电极(101)设置为包围部分铁电结构(103),中心电极(102)位于铁电结构(103)的通孔(U)内,在铁电存储器(1)的制作过程中,只要使铁电结构(103)的初始极化方向(T)平行于第一平面即可,无需精确设计和计算铁电材料的极化方向和微纳加工方向,对加工精度的要求较低,制作工艺的难度较小。
Description
PCT国内申请,说明书已公开。
Claims (12)
- PCT国内申请,权利要求书已公开。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2020/132944 WO2022110218A1 (zh) | 2020-11-30 | 2020-11-30 | 一种铁电存储器及电子设备 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN115843390A true CN115843390A (zh) | 2023-03-24 |
Family
ID=81753907
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202080103171.0A Pending CN115843390A (zh) | 2020-11-30 | 2020-11-30 | 一种铁电存储器及电子设备 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN115843390A (zh) |
WO (1) | WO2022110218A1 (zh) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5976928A (en) * | 1997-11-20 | 1999-11-02 | Advanced Technology Materials, Inc. | Chemical mechanical polishing of FeRAM capacitors |
EP1624479A3 (en) * | 2004-08-05 | 2008-07-16 | Samsung Electronics Co, Ltd | Ferroelectric memory and ferroelectric capacitor with Ir-alloy electrode or Ru-alloy electrode and method of manufacturing same |
KR20190115508A (ko) * | 2018-03-15 | 2019-10-14 | 에스케이하이닉스 주식회사 | 강유전성 메모리 장치 |
US10403631B1 (en) * | 2018-08-13 | 2019-09-03 | Wuxi Petabyte Technologies Co., Ltd. | Three-dimensional ferroelectric memory devices |
CN110041208A (zh) * | 2019-04-11 | 2019-07-23 | 东南大学 | 一种三维分子基铁电存储器件 |
-
2020
- 2020-11-30 CN CN202080103171.0A patent/CN115843390A/zh active Pending
- 2020-11-30 WO PCT/CN2020/132944 patent/WO2022110218A1/zh active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2022110218A1 (zh) | 2022-06-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN110192279B (zh) | 存储器单元及形成电容器的方法 | |
US8338224B2 (en) | Resistance-type random access memory device having three-dimensional bit line and word line patterning | |
US8013317B2 (en) | Nonvolatile storage device and method for manufacturing same | |
US8546861B2 (en) | Resistance change memory device with three-dimensional structure, and device array, electronic product and manufacturing method therefor | |
US7692178B2 (en) | Nonvolatile memory element, nonvolatile memory apparatus, and method of manufacture thereof | |
US6927430B2 (en) | Shared bit line cross-point memory array incorporating P/N junctions | |
JP5025696B2 (ja) | 抵抗変化メモリ | |
JP6230229B2 (ja) | 集積トランジスタセレクタを有する積層rram | |
JP4373486B2 (ja) | 不揮発性記憶素子アレイおよびその製造方法 | |
JP4880894B2 (ja) | 半導体記憶装置の構造及びその製造方法 | |
KR20160020890A (ko) | 저항 변화 메모리 소자 및 그 제조 방법 | |
KR20130120696A (ko) | 가변 저항 메모리 장치 및 그 제조 방법 | |
KR20100033303A (ko) | 비휘발성 메모리 소자 및 그 제조 방법 | |
KR20140069663A (ko) | 가변 저항 메모리 장치 및 그 제조 방법 | |
KR20190047884A (ko) | 3차원 적층을 위한 저항성 메모리 소자 및 이를 이용한 메모리 어레이와 그 제조방법 | |
US9812641B2 (en) | Non-volatile memory device and methods for fabricating the same | |
US9379165B2 (en) | Semiconductor memory device | |
CN115843390A (zh) | 一种铁电存储器及电子设备 | |
KR100993052B1 (ko) | 3차원 구조를 갖는 저항 변화 메모리 소자, 저항 변화 메모리 소자 어레이, 전자제품 및 상기 소자 제조방법 | |
CN110176471A (zh) | 交叉点阵列器件及其制造方法 | |
CN114864811A (zh) | 相变存储单元、相变存储器及其制备方法、电子设备 | |
CN114930530A (zh) | 一种三维铁电存储器、制作方法及电子设备 | |
CN116018892A (zh) | 一种存储器件及其制造方法、电子设备 | |
WO2023179250A1 (zh) | 一种铁电材料、铁电存储单元、存储器及电子设备 | |
KR100998256B1 (ko) | 수직형 비휘발성 메모리 소자 및 그 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |