CN114930530A - 一种三维铁电存储器、制作方法及电子设备 - Google Patents
一种三维铁电存储器、制作方法及电子设备 Download PDFInfo
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- CN114930530A CN114930530A CN202080092634.8A CN202080092634A CN114930530A CN 114930530 A CN114930530 A CN 114930530A CN 202080092634 A CN202080092634 A CN 202080092634A CN 114930530 A CN114930530 A CN 114930530A
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- 229910002113 barium titanate Inorganic materials 0.000 claims description 8
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
- H10B51/20—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the three-dimensional arrangements, e.g. with cells on different height levels
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
Abstract
本申请提供了一种三维铁电存储器的制作方法，该方法能够在保证三维铁电存储器具有较好的耐久性，同时又能降低三维铁电存储器制作过程中的刻蚀难度。该方法包括：在衬底上形成堆叠层，该堆叠层包括堆叠且交替设置的隔离层和牺牲层；在堆叠层中设置多列第一电压线，在多列第一电压线中任意相邻的两列第一电压线之间设置隔离凹槽；刻蚀掉堆叠层中的牺牲层，并形成与隔离层堆叠且交替设置的金属层以得到存储层，金属层包括铁电层和多个第二电压线，铁电层包围多个第二电压线和多列第一电压线位于金属层的部分，以使金属层中形成MFM结构，保证了该三维铁电存储器的耐久性。同时由于牺牲层为易腐蚀的材料，从而可以降低制作过程中的刻蚀难度。
Description
PCT国内申请，说明书已公开。
Claims (23)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2020/093504 WO2021237730A1 (zh) | 2020-05-29 | 2020-05-29 | 一种三维铁电存储器、制作方法及电子设备 |
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| Publication Number | Publication Date |
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| CN114930530A true CN114930530A (zh) | 2022-08-19 |
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| CN202080092634.8A Pending CN114930530A (zh) | 2020-05-29 | 2020-05-29 | 一种三维铁电存储器、制作方法及电子设备 |
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| Country | Link |
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| WO (1) | WO2021237730A1 (zh) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117241589A (zh) * | 2022-06-02 | 2023-12-15 | 华为技术有限公司 | 铁电存储器及其制备方法、电子设备 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9941299B1 (en) * | 2017-05-24 | 2018-04-10 | Sandisk Technologies Llc | Three-dimensional ferroelectric memory device and method of making thereof |
| CN109786390B (zh) * | 2017-11-13 | 2022-12-20 | 萨摩亚商费洛储存科技股份有限公司 | 三维储存元件及其制造方法 |
| KR102538701B1 (ko) * | 2018-02-22 | 2023-06-01 | 에스케이하이닉스 주식회사 | 강유전성 메모리 장치 및 그 구동 방법 |
| CN108550575B (zh) * | 2018-04-13 | 2019-05-31 | 长江存储科技有限责任公司 | 三维存储器的制备方法及沟槽底部刻蚀方法 |
| CN110071117B (zh) * | 2019-04-28 | 2021-05-11 | 中国科学院微电子研究所 | 一种三维nand型铁电存储器、制作方法及操作方法 |
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2020
- 2020-05-29 CN CN202080092634.8A patent/CN114930530A/zh active Pending
- 2020-05-29 WO PCT/CN2020/093504 patent/WO2021237730A1/zh active Application Filing
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| WO2021237730A1 (zh) | 2021-12-02 |
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