CN115808341B - Grinding sample preparation method of semiconductor chip sample section - Google Patents
Grinding sample preparation method of semiconductor chip sample section Download PDFInfo
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- CN115808341B CN115808341B CN202211691068.XA CN202211691068A CN115808341B CN 115808341 B CN115808341 B CN 115808341B CN 202211691068 A CN202211691068 A CN 202211691068A CN 115808341 B CN115808341 B CN 115808341B
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- 238000000227 grinding Methods 0.000 title claims abstract description 64
- 238000005464 sample preparation method Methods 0.000 title claims abstract description 37
- 239000004065 semiconductor Substances 0.000 title claims abstract description 33
- 238000005498 polishing Methods 0.000 claims abstract description 234
- 239000000758 substrate Substances 0.000 claims abstract description 160
- 239000003292 glue Substances 0.000 claims abstract description 81
- 238000007789 sealing Methods 0.000 claims abstract description 68
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 24
- 229910003460 diamond Inorganic materials 0.000 claims description 46
- 239000010432 diamond Substances 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 40
- 244000137852 Petrea volubilis Species 0.000 claims description 29
- 239000003822 epoxy resin Substances 0.000 claims description 24
- 229920000647 polyepoxide Polymers 0.000 claims description 24
- 239000002245 particle Substances 0.000 claims description 23
- 239000012943 hotmelt Substances 0.000 claims description 17
- 238000003825 pressing Methods 0.000 claims description 14
- 238000001816 cooling Methods 0.000 claims description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 239000000843 powder Substances 0.000 claims description 9
- 238000005070 sampling Methods 0.000 claims 1
- 238000002360 preparation method Methods 0.000 description 18
- 238000009826 distribution Methods 0.000 description 9
- 239000006059 cover glass Substances 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 6
- 229910010271 silicon carbide Inorganic materials 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 238000003754 machining Methods 0.000 description 4
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
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- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
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- 230000008018 melting Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
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Abstract
The invention relates to a grinding sample preparation method of a semiconductor chip sample section, which comprises the following steps: determining the position of a target structure to be observed, and processing marks on two sides of the length direction of the target structure position by using a focused ion beam to obtain a marked sample; clamping and sealing the obtained marked sample by using the first substrate and the second substrate, so that the first substrate, the second substrate and the marked sample are parallel to each other, and obtaining a sealing sample; and horizontally fixing the obtained sealing glue sample, and then sequentially performing first polishing, second polishing, third polishing, fourth polishing and fifth polishing. The grinding sample preparation method provided by the invention has the advantages of higher efficiency, high precision and extremely high polishing and grinding success rate.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and relates to a sample preparation method, in particular to a grinding sample preparation method for a semiconductor chip sample section.
Background
The slice preparation method for observing the cross-section structure of the semiconductor chip is prepared by adopting a destructive means, and the slice prepared by the method can clearly observe the cross-section structure of a product, provides support for product production and analysis and is widely applied to the fields of semiconductor production, inspection, detection, test and the like.
The traditional preparation method of the semiconductor chip slice comprises the following steps: and cutting the semiconductor chip to be sliced to a proper size, then placing the cut semiconductor chip into a mould, fixing the semiconductor chip, and pouring mosaic resin into the mould for casting. In order to avoid air bubbles generated in the resin and at the bonding part with the semiconductor chip, in some cases, the vacuum is required to be pumped to the molded die to eliminate the generation of air bubbles. After the mosaic resin is sufficiently cured, the semiconductor chip mosaic is taken out of the mold, and then the mosaic is ground and finally observed under a metallographic microscope or under a scanning electron microscope.
CN113607511a discloses a method for preparing a sample to be analyzed of a power chip and a sample to be analyzed of a power chip, the method comprising the steps of: (1) Providing a carrier for carrying a power chip, wherein the carrier has at least one carrier plane with an inclination angle of 30-60 degrees; (2) Fixing the power chip on a carrier plane, and enabling a substrate of the power chip to face the carrier plane to obtain a power chip sample; (3) Grinding the power chip sample along the horizontal direction to obtain the section of the power chip; (4) And dyeing the section of the power chip to obtain a sample to be analyzed of the power chip.
Although the above technical solution increases the accuracy of judging the power chip structure by dyeing, the specific polishing step and polishing method are not involved.
CN102192849a discloses a semiconductor chip slicing material, preparation and application thereof, the preparation method comprises the following steps: and bonding the Si substrate wafers on two sides of the semiconductor chip to be tested by using adhesive glue for bonding inorganic nonmetal to form a sandwich structure, wherein the semiconductor chip to be tested forms a middle layer of the sandwich structure, and two side layers of the sandwich structure are respectively formed by the Si substrate wafers.
CN114609502a discloses a sample preparation method for observing failure area in failure analysis, which comprises the steps of, firstly, providing a chip to be subjected to failure analysis; secondly, a protective adhesive is dotted around the chip and fixed on a small substrate, so that the chip is not damaged during grinding; secondly, inversely fixing the chip on a supporting substrate; finally, filling unloading glue to fix the chip on a bearing substrate, and after judging the failure area in failure analysis, unloading the chip to confirm the failure reason.
The technical proposal relates to the use of adhesive, and the chip surface is not parallel to the substrates at the two sides of the chip and the thickness between the substrates and the chip can not be controlled easily because the thickness of the adhesive is uneven when the chip is placed on the substrate because the fluidity of the adhesive is poor; if the thickness is too thick, the area of the chip processing section becomes large, the grinding time is increased in the subsequent grinding process, and the consumable cost and the time cost are increased; if the thickness is too small, the substrate is broken and falls off in the chip grinding process, and the experiment is failed.
For this reason, it is required to provide a polishing sample preparation method for testing a semiconductor chip sample section with stable structure.
Disclosure of Invention
The invention aims to provide a grinding sample preparation method of a semiconductor chip sample section, which is simple in operation, high in efficiency, high in precision and extremely high in polishing and grinding success rate.
In order to achieve the aim of the invention, the invention adopts the following technical scheme:
in a first aspect, the present invention provides a method for polishing a semiconductor chip sample section, the method comprising the steps of:
(1) Determining the position of a target structure to be observed, and processing marks on two sides of the length direction of the target structure position by using a focused ion beam to obtain a marked sample;
(2) Clamping and sealing the marked sample obtained in the step (1) by using the first substrate and the second substrate, so that the first substrate, the second substrate and the marked sample are parallel to each other, and obtaining a sealing glue sample;
(3) Horizontally fixing the sealing glue sample obtained in the step (2), and then sequentially performing first polishing, second polishing, third polishing, fourth polishing and fifth polishing;
the grinding precision of the first, second, third, fourth and fifth polishing is gradually improved.
According to the grinding sample preparation method provided by the invention, auxiliary sample preparation is carried out by focusing the ion beam, and when the fifth polishing is ground until the mark appears on the section structure, the grinding sample preparation is completed; the invention adjusts the level of the target structure position by processing marks on the two sides of the length direction of the target structure position by focusing the ion beam, and the focusing ion beam generated by the ion source acts on the surface of the sample after the ion gun is accelerated by the focusing ion beam, thereby having micron-sized processing precision.
According to the grinding sample preparation method provided by the invention, the first substrate, the second substrate and the marked sample are mutually parallel, and the first polishing, the second polishing, the third polishing, the fourth polishing and the fifth polishing are matched, so that the grinding sample preparation method is simple in operation, higher in efficiency and higher in precision, and has an extremely high polishing and grinding success rate.
Preferably, the first substrate includes a first base and at least 3 isodiametric spheres disposed on the same side surface of the first base, for example, 3, 4, 5 or 6, but not limited to the listed values, and other non-listed values in the range of values are equally applicable.
Because a plane is fixed at three points, and in consideration of the machining precision of the equal-diameter spheres, as a preferable technical scheme, the first substrate comprises a first substrate and 3 equal-diameter spheres arranged on the same side surface of the first substrate, and the distribution of the 3 equal-diameter spheres is triangular.
Preferably, the diameter of the isodiametric sphere disposed on the same side surface of the first substrate is 250-350 μm, for example, 250 μm, 270 μm, 280 μm, 300 μm, 320 μm or 350 μm, but not limited to the recited values, and other non-recited values within the numerical range are equally applicable.
Preferably, the second substrate includes a second base and at least 3 isodiametric spheres disposed on the same side surface of the second base, for example, 3, 4, 5 or 6, but not limited to the recited values, and other non-recited values in the range of values are equally applicable.
Because a plane is fixed at three points, and in consideration of the machining precision of the equal-diameter spheres, as a preferable technical scheme, the second substrate comprises a second substrate and 3 equal-diameter spheres arranged on the same side surface of the second substrate, and the distribution of the 3 equal-diameter spheres is triangular.
Preferably, the diameter of the isodiametric sphere disposed on the same side surface of the second substrate is 250-350 μm, for example, 250 μm, 270 μm, 280 μm, 300 μm, 320 μm, 330 μm or 350 μm, but not limited to the recited values, and other non-recited values within the range of values are equally applicable.
Preferably, the clamping seal in step (2) includes: the first substrate is connected with the marked sample through the corresponding isodiametric sphere, the second substrate is connected with the marked sample through the corresponding isodiametric sphere, and epoxy resin AB glue is arranged between the first substrate and the second substrate.
According to the invention, the marked sample is clamped and sealed by using the epoxy resin AB glue, and the epoxy resin AB glue has higher hardness than the common epoxy resin glue, so that the obtained sealing sample has higher strength and is easier to polish.
Preferably, in the clamping and sealing process in the step (2), the first substrate and the second substrate are pressed, so that the first substrate, the second substrate and the marking sample are parallel to each other when the curing of the epoxy resin AB glue is finished.
The method does not limit the curing temperature and the curing time of the epoxy resin AB glue further, and at least the marked sample is in a fully-wrapped state.
Preferably, the length of the label in step (1) is 4-6 μm, which may be, for example, 4 μm, 4.5 μm, 5 μm, 5.5 μm or 6 μm, but is not limited to the values recited, and other non-recited values within the range of values are equally applicable.
Preferably, the shape of the processing mark in step (1) includes a rectangle or a circle.
Preferably, the fixing horizontally in step (3) includes: fixing the sealing glue sample on a processing table by using molten hot melt wax, and pressing the sealing glue sample in the cooling process to horizontally fix the sealing glue sample;
preferably, the temperature of the hot melt wax is 120-130 ℃, for example, 120 ℃, 122 ℃, 125 ℃, 128 ℃ or 130 ℃, but is not limited to the recited values, and other non-recited values within the range of values are equally applicable.
The hot melt wax has the characteristics of heating, melting, cooling and solidifying, the hot melt wax with the temperature of 120-130 ℃ is uniformly smeared on a processing table, then the sealing glue sample is horizontally fixed on the processing table, the temperature of the processing table is reduced to ensure that the hot melt wax is reduced and fixed, and the sealing glue sample is pressed in the cooling process, so that the sealing glue sample is horizontally fixed.
As a preferable technical scheme, the first polishing, the second polishing, the third polishing and the fourth polishing are respectively and independently sliding polishing.
In the prior art, a grinding turntable is used for grinding and polishing, but the outer side linear speed of the grinding turntable is higher than the inner side linear speed, so that the defect of large cutting amount of an outer ring product easily occurs in the polishing process, and the levelness of the product is difficult to control when a micron-sized section structure is prepared. The invention adopts sliding polishing along the length direction of the target structure position, thereby ensuring the uniformity of the polishing cutting quantity.
Preferably, the first polishing in step (3) is performed using diamond coated abrasive having a particle size of 8.8-9.2 μm, for example, 8.8 μm, 8.9 μm, 9 μm, 9.1 μm or 9.2 μm, but not limited to the recited values, and other non-recited values within the range of values are equally applicable.
The first polishing adopts the diamond sand paper with the granularity of 8.8-9.2 mu m, thereby not only ensuring the grinding quality, but also ensuring the grinding efficiency.
The end point of the first polishing is convenient for the subsequent polishing, and a person skilled in the art can reasonably select the end point of the first polishing according to the process requirements of the subsequent polishing.
Preferably, the second polishing is performed using diamond coated abrasive having a particle size of 5.8-6.2 μm, which may be, for example, 5.8 μm, 5.9 μm, 6 μm, 6.1 μm or 6.2 μm, but is not limited to the recited values, and other non-recited values within the range of values are equally applicable.
The second polishing adopts the diamond sand paper with granularity of 5.8-6.2 mu m, which can reduce the damage of the second polishing to the section and ensure the grinding quality.
Preferably, the second polishing is terminated at a distance of 80-120 μm from the target structure location, which may be, for example, 80 μm, 90 μm, 100 μm, 110 μm or 120 μm, but is not limited to the recited values, and other non-recited values within the range of values are equally applicable.
The end point of the second polishing is controlled to be 80-120 mu m away from the target structure position, so that the polishing efficiency can be ensured, and the damage of the diamond abrasive paper with granularity of 5.5-6.5 mu m to the section can be avoided.
Preferably, the third polishing is performed using diamond coated abrasive having a particle size of 2.8-3.2 μm, which may be, for example, 2.8 μm, 2.9 μm, 3 μm, 3.1 μm or 3.2 μm, but is not limited to the recited values, and other non-recited values within the range of values are equally applicable.
Preferably, the third polishing is terminated 16-24 μm from the target structure location, which may be, for example, 16 μm, 18 μm, 20 μm, 21 μm or 24 μm, but is not limited to the recited values, and other non-recited values within the range of values are equally applicable.
The end point of the third polishing is controlled to be 16-24 mu m away from the target structure position, so that the polishing efficiency can be ensured, and the damage of the diamond abrasive paper with granularity of 2.8-3.2 mu m to the section can be avoided.
Preferably, the fourth polishing is performed using diamond coated abrasive having a particle size of 0.8-1.2 μm, and may be, for example, 0.8 μm, 0.9 μm, 1 μm, 1.1 μm or 1.2 μm, but not limited to the recited values, and other non-recited values within the range of values are equally applicable.
Preferably, the end point of the fourth polishing is 4-6 μm from the target structure location, which may be, for example, 4 μm, 5 μm or 6 μm, but is not limited to the recited values, and other non-recited values within the range of values are equally applicable.
The invention controls the end point of the fourth polishing to be 4-6 mu m away from the target structure position, thereby ensuring the polishing efficiency and avoiding the damage of the diamond abrasive paper with granularity of 0.8-1.2 mu m to the section.
The first polishing, the second polishing, the third polishing and the fourth polishing are performed by adopting diamond sand paper. The silicon carbide sand paper commonly used in the prior art has the defect that the granularity is not uniform enough, and in the grinding process, the periphery of the section can generate micron-sized radian, so that the accuracy of measuring the distance in the preparation process is affected. The invention reduces the generation of section radian and improves the precision of sample preparation through the use of the diamond abrasive paper.
Preferably, the fifth polishing is performed using an alumina powder polishing solution having a particle size of 0.2 to 0.4 μm, and the alumina powder polishing solution has a particle size of 0.2 to 0.4 μm, for example, 0.2 μm, 0.3 μm, or 0.4 μm, but not limited to the recited values, and other non-recited values within the numerical range are equally applicable.
Preferably, the grinding speed of the fifth polishing is 80-120rpm, for example, 80rpm, 90rpm, 100rpm, 110rpm or 120rpm, but not limited to the recited values, and other non-recited values within the numerical range are equally applicable.
Preferably, the endpoint of the fifth polishing is the mark at which the processing of step (1) is observed.
And (3) carrying out optical microscope observation every 25-35s when carrying out the fifth polishing, until the mark processed in the step (1) is observed.
As a preferable technical scheme of the grinding sample preparation method provided by the invention, the grinding sample preparation method comprises the following steps:
(1) Determining the position of a target structure to be observed, and processing marks with the length of 4-6 mu m on two sides of the length direction of the target structure position by using a focused ion beam to obtain a marked sample;
(2) Clamping and sealing the marked sample obtained in the step (1) by using the first substrate and the second substrate, so that the first substrate, the second substrate and the marked sample are parallel to each other, and obtaining a sealing glue sample;
the first substrate comprises a first base and at least 3 isodiametric spheres with the diameters of 250-350 mu m, wherein the isodiametric spheres are arranged on the same side surface of the first base;
the second substrate comprises a second base and at least 3 isodiametric spheres with the diameters of 250-350 mu m, which are arranged on the same side surface of the second base;
the clip seal includes: the first substrate is connected with the marked sample through the corresponding isodiametric sphere, the second substrate is connected with the marked sample through the corresponding isodiametric sphere, and epoxy resin AB glue is arranged between the first substrate and the second substrate; then pressing the first substrate and the second substrate to enable the first substrate, the second substrate and the marking sample to be parallel to each other when the epoxy resin AB glue is solidified;
(3) Horizontally fixing the sealing glue sample obtained in the step (2), and then sequentially performing first polishing, second polishing, third polishing, fourth polishing and fifth polishing;
the horizontal fixing includes: fixing the sealing glue sample on a processing table by using molten hot melt wax, and pressing the sealing glue sample in the cooling process to horizontally fix the sealing glue sample;
the first polishing is carried out by using diamond sand paper with granularity of 8.8-9.2 mu m; the second polishing is carried out by using diamond sand paper with granularity of 5.8-6.2 mu m, and the end point is 80-120 mu m away from the target structure position; the third polishing is carried out by using diamond sand paper with granularity of 2.8-3.2 mu m, and the end point is 16-24 mu m away from the target structure position; the fourth polishing is carried out by using diamond sand paper with granularity of 0.8-1.2 mu m, and the end point is 4-6 mu m away from the target structure position; the fifth polishing is carried out by adopting alumina powder polishing solution with granularity of 0.2-0.4 mu m, the grinding rotating speed is 80-120rpm, and the end point is the mark for observing the processing in the step (1).
Compared with the prior art, the invention has the following beneficial effects:
according to the grinding sample preparation method provided by the invention, auxiliary sample preparation is carried out by focusing the ion beam, and when the fifth polishing is ground until the mark appears on the section structure, the grinding sample preparation is completed; the invention adjusts the level of the target structure position by processing marks on the two sides of the length direction of the target structure position by focusing the ion beam, and the focusing ion beam generated by the ion source acts on the surface of the sample after the ion gun is accelerated by the focusing ion beam, thereby having micron-sized processing precision; according to the grinding sample preparation method provided by the invention, the first substrate, the second substrate and the marked sample are mutually parallel, and the first polishing, the second polishing, the third polishing, the fourth polishing and the fifth polishing are matched, so that the grinding sample preparation method is simple in operation, higher in efficiency and higher in precision, and has an extremely high polishing and grinding success rate.
Drawings
Fig. 1 and 2 are schematic structural views of a slicing mold used in polishing according to the present invention.
Wherein: 1, slicing a die; 2, a processing table; and 3, grooves.
Detailed Description
The technical scheme of the invention is further described by the following specific embodiments. It will be apparent to those skilled in the art that the examples are merely to aid in understanding the invention and are not to be construed as a specific limitation thereof.
In one embodiment of the present invention, the polishing sample preparation method includes the steps of:
(1) Determining the position of a target structure to be observed, and processing marks on two sides of the length direction of the target structure position by using a focused ion beam to obtain a marked sample;
(2) Clamping and sealing the marked sample obtained in the step (1) by using the first substrate and the second substrate, so that the first substrate, the second substrate and the marked sample are parallel to each other, and obtaining a sealing glue sample;
(3) Horizontally fixing the sealing glue sample obtained in the step (2), and then sequentially performing first polishing, second polishing, third polishing, fourth polishing and fifth polishing;
the grinding precision of the first, second, third, fourth and fifth polishing is gradually improved.
According to the grinding sample preparation method provided by the invention, the first substrate, the second substrate and the marked sample are mutually parallel, and the first polishing, the second polishing, the third polishing, the fourth polishing and the fifth polishing are matched, so that the grinding sample preparation method is simple in operation, higher in efficiency and higher in precision, and has an extremely high polishing and grinding success rate.
In some embodiments, the first substrate includes a first base and at least 3 isodiametric spheres disposed on the same side surface of the first base, for example, 3, 4, 5 or 6, but not limited to the recited values, and other non-recited values in the range of values are equally applicable.
Because a plane is fixed at three points, and in consideration of the machining precision of the equal-diameter spheres, as a preferable technical scheme, the first substrate comprises a first substrate and 3 equal-diameter spheres arranged on the same side surface of the first substrate, and the distribution of the 3 equal-diameter spheres is triangular.
In some embodiments, the diameter of the isodiametric sphere disposed on the same side surface of the first substrate is 250-350 μm, such as 250 μm, 270 μm, 280 μm, 300 μm, 320 μm or 350 μm, but not limited to the recited values, and other non-recited values within the range of values are equally applicable.
Preferably, the second substrate includes a second base and at least 3 isodiametric spheres disposed on the same side surface of the second base, for example, 3, 4, 5 or 6, but not limited to the recited values, and other non-recited values in the range of values are equally applicable.
Because a plane is fixed at three points, and in consideration of the machining precision of the equal-diameter spheres, as a preferable technical scheme, the second substrate comprises a second substrate and 3 equal-diameter spheres arranged on the same side surface of the second substrate, and the distribution of the 3 equal-diameter spheres is triangular.
In some embodiments, the diameter of the isodiametric sphere disposed on the same side surface of the second substrate is 250-350 μm, and may be, for example, 250 μm, 270 μm, 280 μm, 300 μm, 320 μm, 330 μm or 350 μm, but is not limited to the recited values, and other non-recited values within the numerical range are equally applicable.
In certain embodiments, the clamping seal of step (2) comprises: the first substrate is connected with the marked sample through the corresponding isodiametric sphere, the second substrate is connected with the marked sample through the corresponding isodiametric sphere, and epoxy resin AB glue is arranged between the first substrate and the second substrate.
According to the invention, the marked sample is clamped and sealed by using the epoxy resin AB glue, and the epoxy resin AB glue has higher hardness than the common epoxy resin glue, so that the obtained sealing sample has higher strength and is easier to polish.
In some embodiments, in the step (2), the first substrate and the second substrate are pressed to make the first substrate, the second substrate and the marking sample parallel to each other when the curing of the epoxy resin AB glue is completed.
The method does not limit the curing temperature and the curing time of the epoxy resin AB glue further, and at least the marked sample is in a fully-wrapped state.
In certain embodiments, the length of the label in step (1) is 4-6 μm, which may be, for example, 4 μm, 4.5 μm, 5 μm, 5.5 μm or 6 μm, but is not limited to the recited values, and other non-recited values within the range of values are equally applicable.
In certain embodiments, the shape of the processing indicia of step (1) comprises a rectangle or a circle.
In certain embodiments, the horizontal fixing of step (3) comprises: fixing the sealing glue sample on a processing table by using molten hot melt wax, and pressing the sealing glue sample in the cooling process to horizontally fix the sealing glue sample;
in certain embodiments, the temperature of the hot melt wax is 120-130 ℃, such as 120 ℃, 122 ℃, 125 ℃, 128 ℃, or 130 ℃, but is not limited to the recited values, and other non-recited values within the range of values are equally applicable.
The hot melt wax has the characteristics of heating, melting, cooling and solidifying, the hot melt wax with the temperature of 120-130 ℃ is uniformly smeared on a processing table, then the sealing glue sample is horizontally fixed on the processing table, the temperature of the processing table is reduced to ensure that the hot melt wax is reduced and fixed, and the sealing glue sample is pressed in the cooling process, so that the sealing glue sample is horizontally fixed.
As a preferable technical scheme, the first polishing, the second polishing, the third polishing and the fourth polishing are respectively and independently sliding polishing.
The first polishing, the second polishing, the third polishing and the fourth polishing are carried out in a slicing die 1 shown in fig. 1 and 2, a sealing glue sample is horizontally fixed on a processing table 2, and then the processing table 2 is assembled in a fixing groove corresponding to the slicing die 1; the slicing die 1 is horizontally reciprocated to enable the grinder turntable to polish the sealing glue sample along the groove 3.
In the prior art, a grinding turntable is used for grinding and polishing, but the outer side linear speed of the grinding turntable is higher than the inner side linear speed, so that the defect of large cutting amount of an outer ring product easily occurs in the polishing process, and the levelness of the product is difficult to control when a micron-sized section structure is prepared. The invention adopts sliding polishing along the length direction of the target structure position, thereby ensuring the uniformity of the polishing cutting quantity.
In certain embodiments, the first polishing of step (3) is performed using diamond coated abrasive having a particle size of 8.8-9.2 μm, which may be, for example, 8.8 μm, 8.9 μm, 9 μm, 9.1 μm, or 9.2 μm, but is not limited to the recited values, as other non-recited values within the range of values are equally applicable.
The first polishing adopts the diamond sand paper with the granularity of 8.8-9.2 mu m, thereby not only ensuring the grinding quality, but also ensuring the grinding efficiency.
In certain embodiments, the second polishing is performed using diamond coated abrasive having a particle size of 5.8-6.2 μm, which may be, for example, 5.8 μm, 5.9 μm, 6 μm, 6.1 μm, or 6.2 μm, but is not limited to the recited values, as other non-recited values within the range of values are equally applicable.
The second polishing adopts the diamond sand paper with granularity of 5.8-6.2 mu m, which can reduce the damage of the second polishing to the section and ensure the grinding quality.
In certain embodiments, the second polish is terminated 80-120 μm from the target structure location, which may be, for example, 80 μm, 90 μm, 100 μm, 110 μm, or 120 μm, but is not limited to the recited values, as other non-recited values within the range of values are equally applicable.
The end point of the second polishing is controlled to be 80-120 mu m away from the target structure position, so that the polishing efficiency can be ensured, and the damage of the diamond abrasive paper with granularity of 5.8-6.2 mu m to the section can be avoided.
In certain embodiments, the third polishing is performed using diamond coated abrasive having a particle size of 2.8-3.2 μm, which may be, for example, 2.8 μm, 2.9 μm, 3 μm, 3.1 μm, or 3.2 μm, but is not limited to the recited values, as other non-recited values within the range of values are equally applicable.
In certain embodiments, the third polish is terminated 16-24 μm from the target structure location, which may be, for example, 16 μm, 18 μm, 20 μm, 21 μm, or 24 μm, but is not limited to the recited values, as other non-recited values within the range of values are equally applicable.
The end point of the third polishing is controlled to be 16-24 mu m away from the target structure position, so that the polishing efficiency can be ensured, and the damage of the diamond abrasive paper with granularity of 2.8-3.2 mu m to the section can be avoided.
In certain embodiments, the fourth polishing is performed using diamond coated abrasive having a particle size of 0.8-1.2 μm, which may be, for example, 0.8 μm, 0.9 μm, 1 μm, 1.1 μm, or 1.2 μm, but is not limited to the recited values, as other non-recited values within the range of values are equally applicable.
In certain embodiments, the fourth polish is terminated at a distance of 4-6 μm from the target structure location, which may be, for example, 4 μm, 5 μm, or 6 μm, but is not limited to the recited values, as other non-recited values within the range of values are equally applicable.
The invention controls the end point of the fourth polishing to be 4-6 mu m away from the target structure position, thereby ensuring the polishing efficiency and avoiding the damage of the diamond abrasive paper with granularity of 0.8-1.2 mu m to the section.
The first polishing, the second polishing, the third polishing and the fourth polishing are performed by adopting diamond sand paper. The silicon carbide sand paper commonly used in the prior art has the defect that the granularity is not uniform enough, and in the grinding process, the periphery of the section can generate micron-sized radian, so that the accuracy of measuring the distance in the preparation process is affected. The invention reduces the generation of section radian and improves the precision of sample preparation through the use of the diamond abrasive paper.
In certain embodiments, the fifth polishing is performed with an alumina powder slurry having a particle size of 0.2-0.4 μm, which may be, for example, 0.2 μm, 0.3 μm, or 0.4 μm, but is not limited to the recited values, as other non-recited values within the range of values are equally applicable.
In certain embodiments, the fifth polish can have a polish speed of 80-120rpm, such as 80rpm, 90rpm, 100rpm, 110rpm, or 120rpm, but is not limited to the recited values, and other non-recited values within the range of values are equally applicable.
In certain embodiments, the endpoint of the fifth polish is the indicia at which the processing of step (1) is observed.
And (3) carrying out optical microscope observation every 25-35s when carrying out the fifth polishing, until the mark processed in the step (1) is observed.
Example 1
The invention provides a grinding sample preparation method of a semiconductor chip sample section, which comprises the following steps:
(1) Determining the position of a target structure to be observed, and processing square marks with the length of 5 mu m on two sides of the length direction of the target structure position by using a focused ion beam to obtain a marked sample; the voltage of the focused ion beam is 30kV, and the current is 90PA;
(2) Clamping and sealing the marked sample obtained in the step (1) by using the first substrate and the second substrate, so that the first substrate, the second substrate and the marked sample are parallel to each other, and obtaining a sealing glue sample;
the first substrate comprises a first base, and 3 equal-diameter spheres with the diameter of 300 mu m are arranged on the same side surface of the first base, wherein the distribution of the 3 equal-diameter spheres is triangular; the first substrate is a cover glass;
the second substrate comprises a second base, and 3 equal-diameter spheres with the diameter of 300 mu m are arranged on the same side surface of the second base, and the distribution of the 3 equal-diameter spheres is triangular; the second substrate is a cover glass;
the clip seal includes: the first substrate is connected with the marked sample through the corresponding isodiametric sphere, the second substrate is connected with the marked sample through the corresponding isodiametric sphere, and epoxy resin AB glue is arranged between the first substrate and the second substrate; then pressing the first substrate and the second substrate to enable the first substrate, the second substrate and the marking sample to be parallel to each other when the epoxy resin AB glue is solidified;
(3) Horizontally fixing the sealing glue sample obtained in the step (2), and then sequentially performing first polishing, second polishing, third polishing, fourth polishing and fifth polishing;
the horizontal fixing includes: fixing the sealing glue sample on a processing table by using molten hot melt wax at 125 ℃, and pressing the sealing glue sample in the cooling process to horizontally fix the sealing glue sample;
the first polishing, the second polishing, the third polishing and the fourth polishing in this embodiment are performed in the dicing die 1 shown in fig. 1 and 2, the sealing glue sample is horizontally fixed on the processing table 2, and then the processing table 2 is assembled in the corresponding fixing groove of the dicing die 1; the slicing mould 1 is horizontally reciprocated and swung, so that the turntable of the grinder polishes the sealing glue sample along the groove 3;
the first polishing was performed using diamond sandpaper having a particle size of 9 μm; the second polishing is carried out by using diamond sand paper with granularity of 6 mu m, and the end point is 100 mu m away from the target structure position; the third polishing is carried out by using diamond sand paper with granularity of 3 mu m, and the end point is 20 mu m away from the target structure position; the fourth polishing is carried out by using diamond sand paper with granularity of 1 mu m, and the end point is 5 mu m away from the target structure position; the fifth polishing was performed using an alumina powder polishing solution having a particle size of 0.3 μm at a polishing speed of 100rpm at the end point of the mark at which the processing in step (1) was observed.
Example 2
The invention provides a grinding sample preparation method of a semiconductor chip sample section, which comprises the following steps:
(1) Determining the position of a target structure to be observed, and processing square marks with the length of 4 mu m on two sides of the length direction of the target structure position by using a focused ion beam to obtain a marked sample; the voltage of the focused ion beam is 30kV, and the current is 90PA;
(2) Clamping and sealing the marked sample obtained in the step (1) by using the first substrate and the second substrate, so that the first substrate, the second substrate and the marked sample are parallel to each other, and obtaining a sealing glue sample;
the first substrate comprises a first base, and 3 isodiametric spheres with the diameter of 250 mu m are arranged on the same side surface of the first base, wherein the distribution of the 3 isodiametric spheres is triangular; the first substrate is a cover glass;
the second substrate comprises a second base, and 3 isodiametric spheres with the diameters of 350 microns are arranged on the same side surface of the second base, and the distribution of the 3 isodiametric spheres is triangular; the second substrate is a cover glass;
the clip seal includes: the first substrate is connected with the marked sample through the corresponding isodiametric sphere, the second substrate is connected with the marked sample through the corresponding isodiametric sphere, and epoxy resin AB glue is arranged between the first substrate and the second substrate; then pressing the first substrate and the second substrate to enable the first substrate, the second substrate and the marking sample to be parallel to each other when the epoxy resin AB glue is solidified;
(3) Horizontally fixing the sealing glue sample obtained in the step (2), and then sequentially performing first polishing, second polishing, third polishing, fourth polishing and fifth polishing;
the horizontal fixing includes: fixing the sealing glue sample on a processing table by using melted 120 ℃ hot melt wax, and pressing the sealing glue sample in the cooling process to horizontally fix the sealing glue sample;
the first polishing, the second polishing, the third polishing and the fourth polishing in this embodiment are performed in the dicing die 1 shown in fig. 1 and 2, the sealing glue sample is horizontally fixed on the processing table 2, and then the processing table 2 is assembled in the corresponding fixing groove of the dicing die 1; the slicing mould 1 is horizontally reciprocated and swung, so that the turntable of the grinder polishes the sealing glue sample along the groove 3;
the first polishing was performed using diamond sandpaper having a particle size of 9 μm; the second polishing is carried out by using diamond sand paper with granularity of 6 mu m, and the end point is 120 mu m away from the target structure position; the third polishing is carried out by using diamond sand paper with granularity of 3 mu m, and the end point is 16 mu m away from the target structure position; the fourth polishing is carried out by using diamond sand paper with granularity of 1 mu m, and the end point is 6 mu m away from the target structure position; the fifth polishing was performed using an alumina powder polishing solution having a particle size of 0.4 μm at a polishing speed of 120rpm at the end point of the mark at which the processing in step (1) was observed.
Example 3
The invention provides a grinding sample preparation method of a semiconductor chip sample section, which comprises the following steps:
(1) Determining the position of a target structure to be observed, and processing square marks with the length of 6 mu m on two sides of the length direction of the target structure position by using a focused ion beam to obtain a marked sample; the voltage of the focused ion beam is 30kV, and the current is 90PA;
(2) Clamping and sealing the marked sample obtained in the step (1) by using the first substrate and the second substrate, so that the first substrate, the second substrate and the marked sample are parallel to each other, and obtaining a sealing glue sample;
the first substrate comprises a first base, and 3 isodiametric spheres with the diameters of 350 microns are arranged on the same side surface of the first base, wherein the 3 isodiametric spheres are distributed in a triangle; the first substrate is a cover glass;
the second substrate comprises a second base, and 3 isodiametric spheres with the diameter of 250 mu m are arranged on the same side surface of the second base, and the distribution of the 3 isodiametric spheres is triangular; the second substrate is a cover glass;
the clip seal includes: the first substrate is connected with the marked sample through the corresponding isodiametric sphere, the second substrate is connected with the marked sample through the corresponding isodiametric sphere, and epoxy resin AB glue is arranged between the first substrate and the second substrate; then pressing the first substrate and the second substrate to enable the first substrate, the second substrate and the marking sample to be parallel to each other when the epoxy resin AB glue is solidified;
(3) Horizontally fixing the sealing glue sample obtained in the step (2), and then sequentially performing first polishing, second polishing, third polishing, fourth polishing and fifth polishing;
the first polishing, the second polishing, the third polishing and the fourth polishing in this embodiment are performed in the dicing die 1 shown in fig. 1 and 2, the sealing glue sample is horizontally fixed on the processing table 2, and then the processing table 2 is assembled in the corresponding fixing groove of the dicing die 1; the slicing mould 1 is horizontally reciprocated and swung, so that the turntable of the grinder polishes the sealing glue sample along the groove 3;
the horizontal fixing includes: fixing the sealing glue sample on a processing table by using melted hot melt wax at 130 ℃, and pressing the sealing glue sample in the cooling process to horizontally fix the sealing glue sample;
the first polishing was performed using diamond sandpaper having a particle size of 9 μm; the second polishing is carried out by using diamond sand paper with granularity of 6 mu m, and the end point is 80 mu m away from the target structure position; the third polishing is carried out by using diamond sand paper with granularity of 3 mu m, and the end point is 24 mu m away from the target structure position; the fourth polishing is carried out by using diamond sand paper with granularity of 1 mu m, and the end point is 4 mu m away from the target structure position; the fifth polishing was performed using an alumina powder polishing solution having a particle size of 0.2 μm at a polishing rotation speed of 80rpm at the end point of the mark at which the processing in step (1) was observed.
Example 4
The present embodiment provides a polishing sample preparation method for a semiconductor chip sample section, which is the same as that of embodiment 1 except that the first substrate is only the first base.
Example 5
The present embodiment provides a polishing sample preparation method for a semiconductor chip sample section, which is the same as that of embodiment 1 except that the second substrate is only the second base.
Example 6
This example provides a method for grinding and preparing a semiconductor chip sample section, which is the same as example 1 except that commercial silicon carbide sandpaper having a particle size of 9 μm is used for the first polishing.
Example 7
This example provides a method for grinding and preparing a semiconductor chip sample section, which is the same as example 1 except that commercial silicon carbide sandpaper having a particle size of 6 μm is used for the second polishing.
Example 8
This example provides a method for grinding and preparing a semiconductor chip sample section, which is the same as example 1 except that commercially available silicon carbide sandpaper having a particle size of 3 μm is used for the third polishing.
Example 9
This example provides a method for grinding and preparing a semiconductor chip sample section, which is the same as example 1 except that a commercially available silicon carbide sandpaper having a particle size of 1 μm is used for the fourth polishing.
Example 10
This example provides a method for grinding a semiconductor chip sample profile, which is the same as example 1 except that the end point of the second polishing is 70 μm from the target structure position.
Example 11
This example provides a method for grinding a semiconductor chip sample section, which is the same as example 1 except that the end point of the third polishing is 12 μm from the target structure position.
Example 12
This example provides a method for grinding a semiconductor chip sample section, which is the same as example 1 except that the end point of the fourth polishing is 2 μm from the target structure position.
The polishing sample preparation method provided in examples 1 to 12 was used to prepare samples of target structure having a width of 15 μm, each example was repeated 10 times, and marks were observed simultaneously on both sides in the longitudinal direction of the target structure position as a reference for success of polishing sample preparation, and when only marks on 1 side were observed, it was revealed that uniformity of polishing sample preparation was poor, and sample preparation failed. The obtained polishing sample preparation success rate is shown in table 1.
TABLE 1
In summary, in the polishing sample preparation method provided by the invention, auxiliary sample preparation is performed by focusing the ion beam, and when the fifth polishing is performed until the mark appears on the cross section structure, the polishing sample preparation is completed; the invention adjusts the level of the target structure position by processing marks on the two sides of the length direction of the target structure position by focusing the ion beam, and the focusing ion beam generated by the ion source acts on the surface of the sample after the ion gun is accelerated by the focusing ion beam, thereby having micron-sized processing precision; according to the grinding sample preparation method provided by the invention, the first substrate, the second substrate and the marked sample are mutually parallel, and the first polishing, the second polishing, the third polishing, the fourth polishing and the fifth polishing are matched, so that the grinding sample preparation method is simple in operation, higher in efficiency and higher in precision, and has an extremely high polishing and grinding success rate.
The foregoing is merely illustrative of the present invention, and the present invention is not limited thereto, and it should be apparent to those skilled in the art that any changes or substitutions that fall within the technical scope of the present invention disclosed herein are within the scope of the present invention.
Claims (16)
1. The grinding sample preparation method of the semiconductor chip sample section is characterized by comprising the following steps of:
(1) Determining the position of a target structure to be observed, and processing marks on two sides of the length direction of the target structure position by using a focused ion beam to obtain a marked sample;
(2) Clamping and sealing the marked sample obtained in the step (1) by using the first substrate and the second substrate, so that the first substrate, the second substrate and the marked sample are parallel to each other, and obtaining a sealing glue sample;
the first substrate comprises a first base and at least 3 isodiametric spheres arranged on the same side surface of the first base;
the second substrate comprises a second base and at least 3 isodiametric spheres arranged on the same side surface of the second base;
(3) Horizontally fixing the sealing glue sample obtained in the step (2), and then sequentially performing first polishing, second polishing, third polishing, fourth polishing and fifth polishing;
the grinding precision of the first polishing, the second polishing, the third polishing, the fourth polishing and the fifth polishing is gradually improved;
the first polishing is carried out by using diamond sand paper with granularity of 8.8-9.2 mu m; the second polishing is performed by using diamond sand paper with granularity of 5.8-6.2 mu m; the third polishing is carried out by using diamond sand paper with granularity of 2.8-3.2 mu m; the fourth polishing is performed using diamond sand paper having a particle size of 0.8 to 1.2 μm.
2. The polishing sample preparation method according to claim 1, wherein the diameter of the isodiametric sphere disposed on the same side surface of the first substrate is 250 to 350. Mu.m.
3. The polishing sample preparation method according to claim 2, wherein the diameter of the isodiametric sphere disposed on the same side surface of the second substrate is 250 to 350 μm.
4. The polishing sample preparation method according to claim 3, wherein the sandwiching in step (2) comprises: the first substrate is connected with the marked sample through the corresponding isodiametric sphere, the second substrate is connected with the marked sample through the corresponding isodiametric sphere, and epoxy resin AB glue is arranged between the first substrate and the second substrate.
5. The method according to claim 3, wherein the first substrate, the second substrate, and the marking sample are parallel to each other after the epoxy resin AB glue curing is completed by pressing the first substrate and the second substrate in the clamping process in step (2).
6. The method according to claim 1, wherein the length of the label in step (1) is 4 to 6. Mu.m.
7. The method according to claim 1, wherein the shape of the processing mark in step (1) comprises a rectangle or a circle.
8. The polishing sample preparation method according to claim 1, wherein the horizontal fixing in step (3) comprises: and fixing the sealing glue sample on a processing table by using molten hot melt wax, and pressing the sealing glue sample in the cooling process to horizontally fix the sealing glue sample.
9. The polishing sample preparation method according to claim 8, wherein the temperature of the hot melt wax is 120 to 130 ℃.
10. The method of claim 1, wherein the second polishing is terminated 80-120 μm from the target structure location.
11. The method of claim 1, wherein the third polishing is terminated 16-24 μm from the target structure location.
12. The method of claim 1, wherein the fourth polishing is terminated at a distance of 4-6 μm from the target structure location.
13. The grinding and sampling method according to claim 1, wherein the fifth polishing is performed using an alumina powder polishing solution having a particle size of 0.2 to 0.4 μm.
14. The polishing sample preparation method according to claim 1, wherein the polishing rotation speed of the fifth polishing is 80 to 120rpm.
15. The method of claim 1, wherein the endpoint of the fifth polishing is an observation of the mark processed in step (1).
16. The grinding sample preparation method of the semiconductor chip sample section is characterized by comprising the following steps of:
(1) Determining the position of a target structure to be observed, and processing marks with the length of 4-6 mu m on two sides of the length direction of the target structure position by using a focused ion beam to obtain a marked sample;
(2) Clamping and sealing the marked sample obtained in the step (1) by using the first substrate and the second substrate, so that the first substrate, the second substrate and the marked sample are parallel to each other, and obtaining a sealing glue sample;
the first substrate comprises a first base and at least 3 isodiametric spheres with the diameters of 250-350 mu m, wherein the isodiametric spheres are arranged on the same side surface of the first base;
the second substrate comprises a second base and at least 3 isodiametric spheres with the diameters of 250-350 mu m, which are arranged on the same side surface of the second base;
the clip seal includes: the first substrate is connected with the marked sample through the corresponding isodiametric sphere, the second substrate is connected with the marked sample through the corresponding isodiametric sphere, and epoxy resin AB glue is arranged between the first substrate and the second substrate; then pressing the first substrate and the second substrate to enable the first substrate, the second substrate and the marking sample to be parallel to each other when the epoxy resin AB glue is solidified;
(3) Horizontally fixing the sealing glue sample obtained in the step (2), and then sequentially performing first polishing, second polishing, third polishing, fourth polishing and fifth polishing;
the horizontal fixing includes: fixing the sealing glue sample on a processing table by using molten hot melt wax, and pressing the sealing glue sample in the cooling process to horizontally fix the sealing glue sample;
the first polishing is carried out by using diamond sand paper with granularity of 8.8-9.2 mu m; the second polishing is carried out by using diamond sand paper with granularity of 5.8-6.2 mu m, and the end point is 80-120 mu m away from the target structure position; the third polishing is carried out by using diamond sand paper with granularity of 2.8-3.2 mu m, and the end point is 16-24 mu m away from the target structure position; the fourth polishing is carried out by using diamond sand paper with granularity of 0.8-1.2 mu m, and the end point is 4-6 mu m away from the target structure position; the fifth polishing is carried out by adopting alumina powder polishing solution with granularity of 0.2-0.4 mu m, the grinding rotating speed is 80-120rpm, and the end point is the mark for observing the processing in the step (1).
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| CN103107110A (en) * | 2011-11-10 | 2013-05-15 | 北大方正集团有限公司 | Chip observation sample manufacture method and system |
| CN111834273A (en) * | 2020-07-23 | 2020-10-27 | 长江存储科技有限责任公司 | Positioning method and positioning device for target position of semiconductor chip sample |
| CN111993257A (en) * | 2020-08-14 | 2020-11-27 | 深圳市前海国佳科技有限公司 | Grinding and polishing method and grinding and polishing system for semiconductor chip |
| CN115165437A (en) * | 2022-06-30 | 2022-10-11 | 深圳市大族数控科技股份有限公司 | Method for making slices |
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| CN103107110A (en) * | 2011-11-10 | 2013-05-15 | 北大方正集团有限公司 | Chip observation sample manufacture method and system |
| CN111834273A (en) * | 2020-07-23 | 2020-10-27 | 长江存储科技有限责任公司 | Positioning method and positioning device for target position of semiconductor chip sample |
| CN111993257A (en) * | 2020-08-14 | 2020-11-27 | 深圳市前海国佳科技有限公司 | Grinding and polishing method and grinding and polishing system for semiconductor chip |
| CN115165437A (en) * | 2022-06-30 | 2022-10-11 | 深圳市大族数控科技股份有限公司 | Method for making slices |
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