CN117825121A - Preparation method of silicon controlled rectifier section metallographic sample - Google Patents
Preparation method of silicon controlled rectifier section metallographic sample Download PDFInfo
- Publication number
- CN117825121A CN117825121A CN202311826907.9A CN202311826907A CN117825121A CN 117825121 A CN117825121 A CN 117825121A CN 202311826907 A CN202311826907 A CN 202311826907A CN 117825121 A CN117825121 A CN 117825121A
- Authority
- CN
- China
- Prior art keywords
- silicon controlled
- sample
- polishing
- cold
- metallographic sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 60
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 60
- 239000010703 silicon Substances 0.000 title claims abstract description 60
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 238000005498 polishing Methods 0.000 claims abstract description 50
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 43
- 239000011347 resin Substances 0.000 claims abstract description 38
- 229920005989 resin Polymers 0.000 claims abstract description 38
- 238000005520 cutting process Methods 0.000 claims abstract description 14
- 244000137852 Petrea volubilis Species 0.000 claims description 15
- 239000000843 powder Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 238000000227 grinding Methods 0.000 claims description 9
- 239000002245 particle Substances 0.000 claims description 8
- 229910003460 diamond Inorganic materials 0.000 claims description 6
- 239000010432 diamond Substances 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 238000001514 detection method Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 5
- 230000035882 stress Effects 0.000 description 5
- 238000001035 drying Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000001000 micrograph Methods 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000000861 blow drying Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000009763 wire-cut EDM Methods 0.000 description 1
Landscapes
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
A preparation method of a metallographic sample with a silicon controlled cross section belongs to the technical field of metallographic sample preparation. The invention relates to a preparation method of a metallographic sample with a silicon controlled section, which comprises the following steps: step 1, wrapping the silicon controlled rectifier by using resin; step 2, cutting the silicon controlled rectifier by using a water knife; step 3, cold inlaying the cut sample by using resin; step 4, polishing; and 5, polishing. The invention fills the blank of preparing the metallographic sample with the section of the silicon controlled rectifier and provides reliable detection data and guarantee for improving the manufacturing process of the silicon controlled rectifier.
Description
Technical Field
The invention belongs to the technical field of metallographic sample preparation, and particularly relates to a preparation method of a silicon controlled rectifier section metallographic sample.
Background
The silicon controlled rectifier is a semiconductor device widely applied to a power electronic system, and has a four-layer structure with three PN junctions, comprising an anode A, a cathode K and a control electrode G. The silicon controlled rectifier has the biggest characteristic of displaying strong controllability in a circuit, and the on-off state of the silicon controlled rectifier can be controlled by a signal of a control electrode. When the thyristor is on, current can smoothly flow between the anode and the cathode, and when a proper signal is applied to the control electrode, the thyristor is in a blocking state, and the current cannot pass. When the performance of the silicon controlled rectifier changes, the change reason needs to be explored and detected. Therefore, it is important to detect the interface of the silicon controlled sample. The preparation method of the silicon controlled section sample directly influences the accuracy of the detection result.
The non-conductive sample cannot be cut in a common wire-cut electrical discharge machining mode, and the aluminum layer on the uppermost layer of the fragile silicon controlled rectifier is directly cut to fall off. At present, no related literature report on the preparation of a silicon controlled section sample exists.
Disclosure of Invention
Therefore, the invention provides a preparation method of the silicon controlled rectifier section metallographic sample, fills the blank of the preparation of the silicon controlled rectifier section metallographic sample, and provides reliable detection data and guarantee for the improvement of the silicon controlled rectifier manufacturing process.
For this purpose, the invention provides the following technical scheme.
In a first aspect, the invention provides a method for preparing a metallographic sample with a silicon controlled cross section, which comprises the following steps:
step 1, wrapping the silicon controlled rectifier by using resin;
step 2, cutting the silicon controlled rectifier by using a water knife;
step 3, cold inlaying the cut sample by using resin;
step 4, polishing;
and 5, polishing.
Further, the resin in the step 1 and/or the step 3 comprises cold-buried resin powder and cold-buried resin water.
Further, the mass ratio of the cold-buried resin powder to the cold-buried resin water is 1: (0.8-1.2).
Further, the mass ratio of the cold-buried resin powder to the cold-buried resin water is 1:1.
further, the step 4 includes: and polishing the surface to be analyzed of the sample sequentially by adopting sand paper from coarse to fine.
Further, sequentially adopting 320# SiC water sand paper, 800# SiC water sand paper, 1200# SiC water sand paper, 2400# SiC water sand paper and 4000# SiC water sand paper for polishing.
Further, in the step 4, each time the sand paper is replaced, the grinding direction is 90 ° with respect to the previous direction.
Further, the step 5 includes: the sample is polished with a diamond polishing liquid with a particle diameter of 1-1.5 microns and an alumina polishing liquid with a particle diameter of 0.05-0.1 microns in sequence.
Further, the sample was blow-dried after polishing.
Further, the sample was blown dry using nitrogen or argon.
When polishing, uniform force is ensured, and the whole section of the sample is polished simultaneously.
The silicon controlled section sample is mechanically polished, and the direction of the sample is not required to be frequently changed in the polishing process, so that the diamond surface is avoided, and clear water is continuously added for short-time polishing during polishing.
Every time the sand paper is replaced, the grinding direction is 90 degrees with the previous direction, and the uniformity of the grinding trace is ensured to be free from the trace of the last sand paper.
The residual moisture on the surface of the polished sample can be removed rapidly by using compressed gas to blow and dry, and water stains can be generated by natural drying, so that the surface of the sample is rusted, and the subsequent analysis is affected. Preferably, inert gas is used to prevent the water from rapidly reacting with high concentration oxygen to produce rust during blow-drying.
The mass ratio of the cold-buried resin powder to the cold-buried resin water is 1:1, the bubbles (generated during stirring) remaining after solidification are small and the solidification time is fast.
And finally, polishing with clear water to remove stress and alumina particles on the surface of the sample. The residual stress brought to the surface of the sample by grinding and polishing can be removed by polishing the clean water for several minutes, so that the accuracy of subsequent EPSD and other analysis is ensured.
The technical scheme of the invention has the following advantages:
1. the preparation method of the metallographic sample with the controlled silicon section comprises the following steps: step 1, wrapping the surface of the silicon controlled rectifier by using resin; step 2, cutting the silicon controlled rectifier by using a water knife; step 3, cold inlaying the cut sample by using resin; step 4, rough grinding; and 5, polishing.
Considering the characteristics of the silicon controlled rectifier that is hard and fragile and the possible damage to the sample caused by subsequent cutting, the silicon controlled rectifier is wrapped by resin before cutting, so that the integrity of the silicon controlled rectifier can be ensured in cutting, and the fragmentation of the silicon and the falling of an aluminum layer are prevented.
Considering that the controllable silicon is non-conductive and hard, brittle and fragile, the water knife is used for cutting, the water knife is not influenced by conductive factors and can radiate heat in time, the alloy area is prevented from further changing due to overhigh temperature, and the problem that the silicon wafer is cracked due to incapability of cutting by using a wire-cut electric discharge machine and thermal stress generated by laser cutting can be solved by cutting the controllable silicon by using the water knife.
2. And 3, carrying out cold inlaying on the cut sample by using resin. Cold inlaying can avoid the phenomenon that the interface possibly changes caused by hot inlaying in the heating process.
3. The polishing mode of the invention can lead the polished sample to truly display the interface components and structures in the subsequent analysis.
The invention researches the influence of sample protection, a cutting method, an embedding material, a polishing method and the like on the preparation quality of a metallographic sample with a silicon controlled cross section, and provides a preparation method of the metallographic sample with the silicon controlled cross section for a scanning electron microscope.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic cross-sectional view of a thyristor;
FIG. 2 is a scanning electron microscope image of the upper half of a metallographic sample of a silicon controlled section according to example 1;
fig. 3 is a scanning electron microscope image of the lower half of the silicon controlled rectifier section metallographic sample of example 1.
Detailed Description
The following examples are provided for a better understanding of the present invention and are not limited to the preferred embodiments described herein, but are not intended to limit the scope of the invention, any product which is the same or similar to the present invention, whether in light of the present teachings or in combination with other prior art features, falls within the scope of the present invention.
The specific experimental procedures or conditions are not noted in the examples and may be followed by the operations or conditions of conventional experimental procedures described in the literature in this field. The reagents or apparatus used were conventional reagent products commercially available without the manufacturer's knowledge.
Example 1
A schematic diagram of a section of a silicon controlled rectifier is shown in fig. 1, and the embodiment provides a preparation method of a metallographic sample of the section of the silicon controlled rectifier, which comprises the following steps:
step 1, cold-buried resin powder of A91000 model and cold-buried resin water of A90800 model are mixed according to the mass ratio of 1:1, and pouring the mixture into a cake-shaped mold with a silicon controlled rectifier sample to wrap the sample.
And 2, cutting the silicon controlled rectifier by adopting a water jet cutter, wherein the precision is 0.5mm.
Step 3, cold-buried resin powder of A91000 model and cold-buried resin water of A90800 model are mixed according to the mass ratio of 1:1, and then pouring the mixture into a mosaic mold containing the cut sample to mosaic the sample.
Step 4, polishing: and (3) polishing the section to be analyzed of the sample obtained in the step (3) with SiC water sand paper of 320#, 800#, 1200#, 2400#, 4000# in sequence. For each replacement of sandpaper, the grinding direction should be 90 ° from the previous direction.
Step 5, polishing: and (3) mechanically polishing the section to be analyzed of the sample obtained in the step (4) by using a diamond polishing solution with the granularity of 1 micron and an alumina polishing solution with the granularity of 0.05 micron until the surface is smooth and free of scratches, and continuously adding clear water for short-time polishing when the edge is free of chamfer. And finally, polishing with clear water to remove stress and alumina particles on the surface of the sample, and drying with nitrogen.
The scanning electron microscope images of the metallographic sample of the silicon controlled section prepared by the embodiment are shown in fig. 2 and 3, the prepared scanning electron microscope sample has a clear structure, and the surface aluminum coating has a complete structure, so that the follow-up analysis work is convenient to carry out.
Example 2
The embodiment provides a preparation method of a metallographic sample with a silicon controlled cross section, which comprises the following steps:
step 1, cold-buried resin powder of A91000 model and cold-buried resin water of A90800 model are mixed according to the mass ratio of 1: mixing and stirring the materials according to the proportion of 0.8, and pouring the materials into a cake-shaped die with a silicon controlled rectifier sample to wrap the sample.
And 2, cutting the silicon controlled rectifier by adopting a water jet cutter, wherein the precision is 0.5mm.
Step 3, cold-buried resin powder of A91000 model and cold-buried resin water of A90800 model are mixed according to the mass ratio of 1: mixing and stirring the materials according to the proportion of 0.8, pouring the materials into a mosaic mold with a cut sample, and mosaic the plating sample.
Step 4, polishing: and (3) polishing the section to be analyzed of the sample obtained in the step (3) with SiC water sand paper of 320#, 800#, 1200#, 2400#, 4000# in sequence. For each replacement of sandpaper, the grinding direction should be 90 ° from the previous direction.
Step 5, polishing: and (3) mechanically polishing the section to be analyzed of the sample obtained in the step (4) by using a diamond polishing solution with the granularity of 1 micron and an alumina polishing solution with the granularity of 0.05 micron until the surface is smooth and free of scratches, and continuously adding clear water for short-time polishing when the edge is free of chamfer. And finally, polishing with clear water to remove stress and alumina particles on the surface of the sample, and drying with nitrogen.
Example 3
The embodiment provides a preparation method of a metallographic sample with a silicon controlled cross section, which comprises the following steps:
step 1, cold-buried resin powder of A91000 model and cold-buried resin water of A90800 model are mixed according to the mass ratio of 1:1.2, pouring the mixture into a cake-shaped mold with a silicon controlled rectifier sample to wrap the sample.
And 2, cutting the silicon controlled rectifier by adopting a water jet cutter, wherein the precision is 0.5mm.
Step 3, cold-buried resin powder of A91000 model and cold-buried resin water of A90800 model are mixed according to the mass ratio of 1:1.2, pouring the mixture into a mosaic mold with the cut sample to mosaic the coating sample.
Step 4, polishing: and (3) polishing the section to be analyzed of the sample obtained in the step (3) with SiC water sand paper of 320#, 800#, 1200#, 2400#, 4000# in sequence. For each replacement of sandpaper, the grinding direction should be 90 ° from the previous direction.
Step 5, polishing: mechanically polishing the sample with diamond polishing liquid with granularity of 1.5 microns and alumina polishing liquid with granularity of 0.1 micron until the surface is smooth and has no scratch, no chamfer at the edge, and continuously adding clear water for short-time polishing during polishing. And finally, polishing with clear water to remove stress and alumina particles on the surface of the sample, and drying with nitrogen.
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. And obvious variations or modifications thereof are contemplated as falling within the scope of the present invention.
Claims (10)
1. The preparation method of the metallographic sample with the silicon controlled cross section is characterized by comprising the following steps of:
step 1, wrapping the silicon controlled rectifier by using resin;
step 2, cutting the silicon controlled rectifier by using a water knife;
step 3, cold inlaying the cut sample by using resin;
step 4, polishing;
and 5, polishing.
2. The method for preparing a metallographic sample of a silicon controlled section according to claim 1, wherein the resin in step 1 and/or step 3 comprises cold buried resin powder and cold buried resin water.
3. The method for preparing the metallographic sample with the controlled silicon section according to claim 2, wherein the mass ratio of the cold-buried resin powder to the cold-buried resin water is 1: (0.8-1.2).
4. The method for preparing a metallographic sample of a silicon controlled section according to claim 3, wherein the mass ratio of the cold-buried resin powder to the cold-buried resin water is 1:1.
5. the method for preparing a metallographic sample of a silicon controlled section according to any one of claims 1 to 4, wherein step 4 comprises: and polishing the surface to be analyzed of the sample sequentially by adopting sand paper from coarse to fine.
6. The method for preparing the metallographic sample with the silicon controlled cross section according to claim 5, wherein the SiC water sand paper with the numbers 320, 800, 1200, 2400 and 4000 is adopted for polishing in sequence.
7. The method according to claim 5, wherein in the step 4, each time the sand paper is replaced, the grinding direction is 90 ° from the previous direction.
8. The method for preparing a metallographic sample of a silicon controlled section according to any one of claims 1 to 4, wherein the step 5 comprises: the sample is polished with a diamond polishing liquid with a particle diameter of 1-1.5 microns and an alumina polishing liquid with a particle diameter of 0.05-0.1 microns in sequence.
9. The method for preparing a metallographic sample with a silicon controlled cross section according to any one of claims 1 to 4, wherein the sample is blow-dried after polishing.
10. The method for preparing a metallographic sample with a silicon controlled cross section according to claim 9, wherein the sample is blow-dried by using nitrogen or argon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311826907.9A CN117825121A (en) | 2023-12-27 | 2023-12-27 | Preparation method of silicon controlled rectifier section metallographic sample |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311826907.9A CN117825121A (en) | 2023-12-27 | 2023-12-27 | Preparation method of silicon controlled rectifier section metallographic sample |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117825121A true CN117825121A (en) | 2024-04-05 |
Family
ID=90522318
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311826907.9A Pending CN117825121A (en) | 2023-12-27 | 2023-12-27 | Preparation method of silicon controlled rectifier section metallographic sample |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117825121A (en) |
-
2023
- 2023-12-27 CN CN202311826907.9A patent/CN117825121A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW440915B (en) | Semiconductor device and its manufacture | |
| US20130203237A1 (en) | Cutting method for device wafer | |
| Peng et al. | Study of electrical discharge machining technology for slicing silicon ingots | |
| US6852012B2 (en) | Cluster tool systems and methods for in fab wafer processing | |
| US20090004824A2 (en) | Method, apparatus for holding and treatment of a substrate | |
| US20090035879A1 (en) | Laser dicing device and laser dicing method | |
| US20030089384A1 (en) | Cleaning sheet and method for a probe | |
| CN106816404B (en) | Film-expanding and grain-taking method of wafer and production method of wafer | |
| KR20140043278A (en) | Wafer machining method | |
| JP2003229392A (en) | Method for manufacturing silicon wafer, silicon wafer and soi wafer | |
| US20110021025A1 (en) | Method for producing laser-marked semiconductor wafer | |
| KR101974386B1 (en) | Electrode static chuck | |
| CN110018028B (en) | Preparation method of metallographic section sample of sapphire substrate electronic component | |
| JP4912729B2 (en) | Outline processing method of silicon carbide single crystal ingot | |
| CN117825121A (en) | Preparation method of silicon controlled rectifier section metallographic sample | |
| CN115808341B (en) | Grinding sample preparation method of semiconductor chip sample section | |
| Chen et al. | The evaluation of wafer thinning and singulating processes to enhance chip strength | |
| JP5151059B2 (en) | Outline processing method of silicon carbide single crystal wafer | |
| JP2011014783A (en) | Chuck table for cutting device | |
| Chen et al. | Study on the effects of wafer thinning and dicing on chip strength | |
| JP2004063883A (en) | Method for manufacturing semiconductor wafer | |
| Su et al. | Optimizing the dicing saw parameters of 60 μm wafer dicing street | |
| JPH11281307A (en) | Electrode plate, manufacture of electrode plate and measuring method of surface roughness of its small diameter hole inner wall | |
| US20050178241A1 (en) | Grindable self-cleaning singulation saw blade and method | |
| Miyazawa et al. | Sintered diamond cutting inserts with chip breaker prepared by laser technique |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |