CN103107110A - Chip observation sample manufacture method and system - Google Patents
Chip observation sample manufacture method and system Download PDFInfo
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- CN103107110A CN103107110A CN2011103554392A CN201110355439A CN103107110A CN 103107110 A CN103107110 A CN 103107110A CN 2011103554392 A CN2011103554392 A CN 2011103554392A CN 201110355439 A CN201110355439 A CN 201110355439A CN 103107110 A CN103107110 A CN 103107110A
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- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 238000000227 grinding Methods 0.000 claims abstract description 50
- 238000005498 polishing Methods 0.000 claims abstract description 34
- 244000137852 Petrea volubilis Species 0.000 claims abstract description 18
- 238000002161 passivation Methods 0.000 claims abstract description 17
- 239000012530 fluid Substances 0.000 claims description 14
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- 229910003460 diamond Inorganic materials 0.000 claims description 8
- 239000010432 diamond Substances 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 239000000843 powder Substances 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 2
- 239000012188 paraffin wax Substances 0.000 claims description 2
- 239000002002 slurry Substances 0.000 claims 2
- 238000002360 preparation method Methods 0.000 claims 1
- 238000001020 plasma etching Methods 0.000 abstract description 8
- 239000007788 liquid Substances 0.000 abstract description 5
- 239000002184 metal Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000012356 Product development Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
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Abstract
The invention discloses a chip observation sample manufacture method and a system. The chip observation sample manufacture method and the system are used for forming a chip observation sample without using a reactive ion etching (RIE) device, and are capable of reducing realization complexity, improving efficiency, reducing cost and improving general applicability in manufacturing the chip observation sample. The chip observation sample manufacture method comprises the following steps. A to-be-observed chip is fixed on the surface of an object, a passivation layer of the to-be-observed chip is ground through a grinding and polishing machine by utilizing sand paper with first granularity or grinding liquid, and grinding is performed by utilizing sand paper with second granularity which is smaller than the first granularity till a to-be-observed layer occurs. The grinding and polishing machine polishes the surface of the to-be-observed layer, and the chip observation sample is formed.
Description
Technical Field
The invention relates to the technical field of semiconductor generation, in particular to a method and a system for manufacturing a chip observation sample.
Background
The observation of the morphology of each layer of the chip is a common method for determining the internal structure of the chip, is widely applied to the fields of semiconductor production, detection and the like, and can provide support for production, improvement and analysis of products.
At present, in the production or detection process of a chip, for example, in the process of performing product failure analysis, process improvement, new product development, raw material evaluation, and reverse design, some key layers of the chip need to be observed in structure, because the thickness of each key layer is very thin, about one-thousandth of a millimeter, and is tightly wrapped by a dielectric layer, the observation surface of each key layer of the chip can be formed only by Reactive Ion Etching (RIE), but the RIE is expensive in equipment, large in floor area, needs to be matched with a plurality of gases, is also complex in operation, and does not have universal applicability.
Disclosure of Invention
The invention provides a chip observation sample manufacturing method which is used for avoiding the use of RIE equipment to form a chip observation sample, reducing the implementation complexity, improving the efficiency, reducing the cost and improving the general applicability of the manufactured chip observation sample.
The embodiment of the invention provides the following specific technical scheme:
a chip observation sample manufacturing method, comprising:
fixing a chip to be observed on the surface of an object;
grinding and removing the passivation layer of the chip to be observed by using sand paper or grinding fluid with a first granularity through a grinding and polishing machine; and
continuously grinding by using sand paper with a second granularity smaller than the first granularity until the sand paper is ground to a layer to be observed;
and polishing the surface of the layer to be observed by using a grinding and polishing machine to form a chip observation sample.
A chip observation sample manufacturing system comprises a chip to be observed and also comprises:
a fixing object for fixing a chip to be observed on a surface thereof;
the grinding and polishing machine is used for grinding and removing the passivation layer of the chip to be observed by adopting sand paper or grinding fluid with a first granularity and continuously grinding by adopting sand paper with a second granularity smaller than the first granularity until the passivation layer is ground to the layer to be observed; and polishing the surface of the layer to be observed to form a chip observation sample.
Based on the technical scheme, in the embodiment of the invention, the chip to be observed is fixed on the surface of an object, the passivation layer of the chip to be observed is removed by grinding with abrasive paper or grinding fluid with a first granularity through a grinding and polishing machine, the abrasive paper with a second granularity smaller than the first granularity is continuously ground until the passivation layer is ground to the layer to be observed, and the surface of the layer to be observed is polished by the grinding and polishing machine, so that the chip observation sample is formed, the use of complicated and precise equipment such as R1E is avoided, the operation is simple, the manufacture is convenient, the efficiency of manufacturing the chip observation sample is improved, the cost is saved, and the general applicability of manufacturing the chip observation sample is improved.
Drawings
FIG. 1 is a flow chart of a method for manufacturing a sample for observing a chip according to an embodiment of the present invention;
fig. 2 is a structural view of an observation sample of a chip metal layer formed in an embodiment of the present invention.
Detailed Description
In order to avoid forming a chip observation sample by using complicated and precise equipment such as R1E and the like, reduce the implementation complexity, improve the efficiency, reduce the cost and improve the general applicability of manufacturing the chip observation sample, the embodiment of the invention provides a method and a system for manufacturing the chip observation sample.
Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
In the embodiment of the invention, the chip observation sample manufacturing system mainly comprises a chip to be observed, a fixed object and a grinding and polishing machine, wherein,
a fixing object for fixing a chip to be observed on a surface thereof;
and the grinding and polishing machine is used for grinding and removing the passivation layer of the chip to be observed by adopting sand paper or grinding fluid with a first granularity, continuously grinding by adopting sand paper with a second granularity smaller than the first granularity until the sand paper is ground to the layer to be observed, and polishing the surface of the layer to be observed to form the chip observation sample.
Based on the system architecture, as shown in fig. 1, in the embodiment of the present invention, a detailed method flow for manufacturing a chip observation sample is as follows:
step 101: fixing the chip to be observed on the surface of an object.
In practical applications, a mechanical structure is designed on an object to fix a chip to be observed, for example, a fixing bolt or a fixing groove is arranged on the object to fix the chip to be observed on the surface of the object; alternatively, the chip to be observed is stuck to the surface of the object with a substance having a sticking property. Preferably, the adhesive substance is used to remove the chip from the surface of the object after the sample to be observed is formed.
Preferably, the chip to be observed is fixed on the surface of the object with a flat surface by using paraffin. The chip can also be removed by heating after the sample to be observed is formed.
In practical applications, the surface of the object for fixing the chip is required to have a certain flatness, for example, a stainless steel plate is used for fixing the chip.
Step 102: and grinding and removing the passivation layer of the chip to be observed by using sand paper or grinding fluid with a first granularity through a grinding and polishing machine.
Wherein, the abrasive paper of first granularity is the silicon nitride abrasive paper that the granularity scope is [7um, 15um ], and the lapping liquid is the diamond lapping liquid that the granularity scope is [3um, 8um ].
Preferably, the first-granularity abrasive paper is silicon nitride abrasive paper with granularity of 10um, and the grinding fluid is diamond grinding fluid with granularity of 5 um.
Step 103: and (4) continuing to grind the layer to be observed by using sand paper with a second granularity smaller than the first granularity.
Wherein, the abrasive paper of second granularity is the silicon nitride abrasive paper that the granularity scope is [3um, 7um ], or, the diamond abrasive paper that the granularity scope is [0.5um, 1um ].
Preferably, the sandpaper of the second grain size is silicon nitride sandpaper with a grain size of 5um, or diamond sandpaper with a grain size of 0.6 um.
Step 104: and polishing the surface of the layer to be observed by using a grinding and polishing machine to form a chip observation sample.
Wherein, on the grinding and polishing machine, polishing liquid or polishing powder is adopted to polish the surface of the layer to be observed.
In the embodiment of the present invention, the particle size range of the polishing liquid or the polishing powder is [0.04um, 0.08um ]. Preferably, the particle size of the polishing solution or powder is 0.06 um. The surface to be observed is polished, so that the surface to be observed is smooth and has a clear structure.
For example, as shown in fig. 2, in order to observe the surface of the sample of the chip formed by the method provided by the embodiment of the present invention, the layer to be observed is a metal layer (metal layer) of the chip.
In practical application, a cross-sectional structure of the chip can be formed firstly, the appearance of each layer of the chip can be displayed from the cross-sectional structure, and whether the passivation layer is removed or not is convenient to observe in the grinding process, so that whether the layer to be observed is ground or not is known. For example, by measuring the change of the thickness of the passivation layer of the chip section, determining whether the passivation layer is removed, if so, continuing to grind after the sand paper is replaced, otherwise, continuing to grind and observing the formed surface in time; or, the appearance of each layer in the cross-sectional structure is directly observed through a scanning electron microscope, and whether the passivation layer is removed or the layer to be observed is ground can be determined. In the other method, the color change of the surface formed by grinding the chip is directly observed under a metallographic microscope in the grinding process, and the method does not need to manufacture a section and is high in speed, but is only suitable for operators with abundant experience.
Based on the technical scheme, in the embodiment of the invention, the chip to be observed is fixed on the surface of an object, the passivation layer of the chip to be observed is removed by grinding with abrasive paper or grinding fluid with a first granularity through a grinding and polishing machine, the abrasive paper with a second granularity smaller than the first granularity is continuously ground until the passivation layer is ground to the layer to be observed, and the surface of the layer to be observed is polished by the grinding and polishing machine, so that the chip observation sample is formed, complex and precise equipment such as RIE (reactive ion etching) is avoided, the operation is simple, the manufacturing is convenient, the efficiency of manufacturing the chip observation sample is improved, the cost is saved, and the general applicability of manufacturing the chip observation sample is improved.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (11)
1. A method for manufacturing a chip observation sample is characterized by comprising the following steps:
fixing a chip to be observed on the surface of an object;
grinding and removing the passivation layer of the chip to be observed by using sand paper or grinding fluid with a first granularity through a grinding and polishing machine; and
continuously grinding by using sand paper with a second granularity smaller than the first granularity until the sand paper is ground to a layer to be observed;
and polishing the surface of the layer to be observed by using a grinding and polishing machine to form a chip observation sample.
2. The method of claim 1, wherein said attaching the chip to be observed to the surface of an object comprises:
arranging a fixing bolt or a fixing groove on the object to fix the chip to be observed on the surface of the object;
or,
and adhering the chip to be observed on the surface of the object by adopting a substance with adhesion property.
3. The method according to claim 2, wherein the substance having adhesive properties is paraffin.
4. The method of claim 1, wherein the first grit sandpaper is a silicon nitride sandpaper having a grit range of [7um, 15um ];
the grinding fluid is diamond grinding fluid with the granularity range of [3um, 8um ].
5. The method of claim 4, wherein the first grit sandpaper is 10um grit silicon nitride sandpaper;
the grinding fluid is diamond grinding fluid with the granularity of 5 um.
6. The method of claim 1, wherein the second grit sandpaper comprises: silicon nitride abrasive paper with a grain size range of [3um, 7um ], or diamond abrasive paper with a grain size range of [0.5um, 1um ].
7. The method of claim 6, wherein the second grit sandpaper is 5um grit silicon nitride sandpaper or 0.6um grit diamond sandpaper.
8. The method of claim 1, wherein polishing the surface of the layer to be observed with a grinder-polisher comprises:
and polishing the surface of the layer to be observed by adopting polishing solution or polishing powder on a grinding and polishing machine.
9. The method of claim 8, wherein the slurry or powder has a particle size in the range of [0.04um, 0.08um ].
10. The method of claim 9, wherein the polishing slurry or powder has a particle size of 0.06 um.
11. The utility model provides a chip observation sample preparation system, includes and waits to observe the chip, its characterized in that still includes:
a fixing object for fixing a chip to be observed on a surface thereof;
the grinding and polishing machine is used for grinding and removing the passivation layer of the chip to be observed by adopting sand paper or grinding fluid with a first granularity and continuously grinding by adopting sand paper with a second granularity smaller than the first granularity until the passivation layer is ground to the layer to be observed; and polishing the surface of the layer to be observed to form a chip observation sample.
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| CN201110355439.2A CN103107110B (en) | 2011-11-10 | 2011-11-10 | A kind of chip observation sample production method and system |
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| CN201110355439.2A CN103107110B (en) | 2011-11-10 | 2011-11-10 | A kind of chip observation sample production method and system |
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| CN103107110A true CN103107110A (en) | 2013-05-15 |
| CN103107110B CN103107110B (en) | 2016-04-06 |
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| CN103698349A (en) * | 2013-12-31 | 2014-04-02 | 上海新阳半导体材料股份有限公司 | Method for detecting annealing effect of TSV (through silicon via) electroplating copper |
| CN103913364A (en) * | 2014-04-18 | 2014-07-09 | 武汉钢铁(集团)公司 | Sample preparation method for electron back scattering diffraction analysis of thin steel and iron material |
| CN104422606A (en) * | 2013-08-27 | 2015-03-18 | 中芯国际集成电路制造(上海)有限公司 | Preparation method of chip failure analysis sample |
| CN105699875A (en) * | 2016-01-15 | 2016-06-22 | 工业和信息化部电子第五研究所 | Method for detecting multilayer copper interconnected layout structure |
| CN108387417A (en) * | 2018-02-01 | 2018-08-10 | 北京工业大学 | A method of avoid inlay from influencing Example Test Data |
| CN109521080A (en) * | 2017-09-19 | 2019-03-26 | 台湾积体电路制造股份有限公司 | Analyze method of the test piece and preparation method thereof with material analysis |
| CN112179915A (en) * | 2019-07-04 | 2021-01-05 | 深圳长城开发科技股份有限公司 | Layer removing method for positioning damage points in bare chip |
| CN112378693A (en) * | 2020-11-30 | 2021-02-19 | 青岛歌尔微电子研究院有限公司 | Chip welding pad slicing method |
| CN113945434A (en) * | 2021-08-09 | 2022-01-18 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Chip layer removing processing method and system |
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| CN114800107A (en) * | 2022-06-27 | 2022-07-29 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Chip layer removal adjusting device and sample preparation method |
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| CN104422606B (en) * | 2013-08-27 | 2017-03-29 | 中芯国际集成电路制造(上海)有限公司 | A kind of chip failure analyzes the preparation method of sample |
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| CN103698349A (en) * | 2013-12-31 | 2014-04-02 | 上海新阳半导体材料股份有限公司 | Method for detecting annealing effect of TSV (through silicon via) electroplating copper |
| CN103913364A (en) * | 2014-04-18 | 2014-07-09 | 武汉钢铁(集团)公司 | Sample preparation method for electron back scattering diffraction analysis of thin steel and iron material |
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| CN108387417A (en) * | 2018-02-01 | 2018-08-10 | 北京工业大学 | A method of avoid inlay from influencing Example Test Data |
| CN112179915A (en) * | 2019-07-04 | 2021-01-05 | 深圳长城开发科技股份有限公司 | Layer removing method for positioning damage points in bare chip |
| CN112378693A (en) * | 2020-11-30 | 2021-02-19 | 青岛歌尔微电子研究院有限公司 | Chip welding pad slicing method |
| CN113945434A (en) * | 2021-08-09 | 2022-01-18 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Chip layer removing processing method and system |
| CN114705706A (en) * | 2022-03-24 | 2022-07-05 | 苏试宜特(深圳)检测技术有限公司 | Hard chip section analysis sample preparation method |
| CN114800107A (en) * | 2022-06-27 | 2022-07-29 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Chip layer removal adjusting device and sample preparation method |
| CN115808341A (en) * | 2022-12-27 | 2023-03-17 | 胜科纳米(苏州)股份有限公司 | Grinding sample preparation method for semiconductor chip sample section |
| CN115808341B (en) * | 2022-12-27 | 2024-01-26 | 胜科纳米(苏州)股份有限公司 | Grinding sample preparation method of semiconductor chip sample section |
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