CN103107110B - A kind of chip observation sample production method and system - Google Patents
A kind of chip observation sample production method and system Download PDFInfo
- Publication number
- CN103107110B CN103107110B CN201110355439.2A CN201110355439A CN103107110B CN 103107110 B CN103107110 B CN 103107110B CN 201110355439 A CN201110355439 A CN 201110355439A CN 103107110 B CN103107110 B CN 103107110B
- Authority
- CN
- China
- Prior art keywords
- granularity
- chip
- seen
- sand paper
- observation sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Sampling And Sample Adjustment (AREA)
Abstract
The invention discloses a kind of chip observation sample production method, in order to avoid using RIE equipment can form chip observation sample, reduce implementation complexity, raise the efficiency, reduce costs, improve the general applicability making chip observation sample.The method is: chip to be seen is fixed on a body surface, the sand paper of the first granularity or lapping liquid is adopted to grind the passivation layer removing described chip to be seen by polisher lapper, and adopt the sand paper of granularity second granularity little than the first granularity to continue to grind, until be ground to layer to be seen, with polisher lapper, polishing is carried out to described layer surface to be seen, form chip observation sample.
Description
Technical field
The present invention relates to semiconductor generation technique field, particularly relate to a kind of chip observation sample production method and system.
Background technology
Observing chip each layer pattern is the method for conventional determination chip internal structure, is widely used in the field such as semiconductor production, detection, can provides support for production, improvement, analysis.
At present, in the production or testing process of chip, such as carry out Product Failure Analysis, process modification, new product development, raw material are assessed, all need in the process of reverse design to carry out structure observation to some key stratum of chip, due to the very thin thickness of each key stratum, be approximately one thousandth grade, and closely wrapped up by dielectric layer, reactive ion etching (ReactiveIonEtching can only be passed through, RIE) the observation surface of each key stratum of chip could be formed, but RIE equipment price is expensive, floor space is larger, need supporting multiple gases, and operation is also very complicated, not there is general applicability.
Summary of the invention
The invention provides a kind of chip observation sample production method, in order to avoid using RIE equipment can form chip observation sample, reduce implementation complexity, raise the efficiency, reduce costs, improve the general applicability making chip observation sample.
The concrete technical scheme that the embodiment of the present invention provides is as follows:
A kind of chip observation sample production method, comprising:
Chip to be seen is fixed on a body surface;
The sand paper of the first granularity or lapping liquid is adopted to grind the passivation layer removing described chip to be seen by polisher lapper; And
The sand paper of the second granularity that granularity is less than the first granularity is adopted to continue grinding, until be ground to layer to be seen;
With polisher lapper, polishing is carried out to described layer surface to be seen, form chip observation sample.
A kind of chip observation sample making system, comprises chip to be seen, also comprises:
Fixed object, for fixing chip to be seen in it on the surface;
Polisher lapper, for adopting the sand paper of the first granularity or lapping liquid grinding to remove the passivation layer of described chip to be seen, and adopts the sand paper of the second granularity that granularity is little than the first granularity to continue to grind, until be ground to layer to be seen; Again polishing is carried out to described layer surface to be seen, form chip observation sample.
Based on technique scheme, in the embodiment of the present invention, by chip to be seen is fixed on a body surface, the sand paper of the first granularity or lapping liquid is adopted to grind the passivation layer removing chip to be seen by polisher lapper, and the sand paper of the second granularity adopting granularity less than the first granularity continues grinding, until be ground to layer to be seen, with polisher lapper, polishing is carried out to this layer surface to be seen again, thus form chip observation sample, avoid the equipment using the complex precises such as R1E, simple to operate, easy to make, improve the efficiency making chip observation sample, save cost, and improve the general applicability making chip observation sample.
Accompanying drawing explanation
Fig. 1 is that embodiment of the present invention chips observes sample production method flow chart;
Fig. 2 is that the chip metal layer formed in the embodiment of the present invention observes sample structure figure.
Embodiment
Chip observation sample can be formed in order to avoid using the equipment of the complex precises such as R1E, reduce implementation complexity, raise the efficiency, reduce costs, improve the general applicability making chip observation sample, embodiments provide a kind of chip observation sample production method and system.
Below in conjunction with accompanying drawing, the preferred embodiment of the present invention is described in detail.
In the embodiment of the present invention, chip observation sample making system, mainly comprises chip to be seen, fixed object and polisher lapper, wherein,
Fixed object, for fixing chip to be seen in it on the surface;
Polisher lapper, for the passivation layer adopting the sand paper of the first granularity or lapping liquid grinding to remove chip to be seen, and adopt the sand paper of granularity second granularity little than the first granularity to continue to grind, until be ground to layer to be seen, treat observed layer surface again and carry out polishing, form chip observation sample.
Based on said system framework, as shown in Figure 1, in the embodiment of the present invention, the method detailed flow process of chip observation sample making is as follows:
Step 101: chip to be seen is fixed on a body surface.
In practical application, fixing chip to be seen by designing mechanical structure on object, such as, object arranging gim peg or fixed groove, so that chip to be seen is fixed on body surface; Or, adopt to have and paste the material of character by chip attach to be seen at body surface.Preferably, chip can also take off from body surface by the stickup material of employing after making forms sample to be seen.
Preferably, paraffin is adopted chip to be seen to be fixed on the body surface of surfacing.After making forms sample to be seen, chip can also be taken off by heating.
In practical application, the body surface of fixed chip requires to have certain evenness, such as, adopts corrosion resistant plate fixed chip.
Step 102: adopt the sand paper of the first granularity or lapping liquid to grind the passivation layer removing chip to be seen by polisher lapper.
Wherein, the sand paper of the first granularity silicon nitride sand paper that to be particle size range be [7um, 15um], the lapping liquid diamond grinding fluid that to be particle size range be [3um, 8um].
Preferably, the sand paper of the first granularity is the silicon nitride sand paper of granularity 10um, the diamond grinding fluid of lapping liquid to be granularity be 5um.
Step 103: adopt the sand paper of the second granularity that granularity is less than the first granularity to continue grinding, until be ground to layer to be seen.
Wherein, the sand paper of the second granularity silicon nitride sand paper that to be particle size range be [3um, 7um], or particle size range is the diamond sand paper of [0.5um, 1um].
Preferably, the silicon nitride sand paper of the sand paper of the second granularity to be granularity be 5um, or granularity is the diamond sand paper of 0.6um.
Step 104: treat observed layer surface with polisher lapper and carry out polishing, forms chip observation sample.
Wherein, on polisher lapper, adopt polishing fluid or polishing powder to treat observed layer surface and carry out polishing.
In the embodiment of the present invention, the particle size range of polishing fluid or polishing powder is [0.04um, 0.08um].Preferably, the granularity of polishing fluid or polishing powder is 0.06um.Carry out polishing to surface to be seen and can make layer surfacing to be seen, structure is clear.
Such as, be that the surface of the chip observation sample that the method provided for adopting the embodiment of the present invention is formed, layer to be seen is the metal level (metal layer) of chip as shown in Figure 2.
In practical application, first can form the cross-section structure of chip, can each layer pattern of display chip from this cross-section structure, be convenient to observe whether remove passivation layer in process of lapping, know and whether be ground to layer to be seen.Such as, by measuring the change of the passivation layer thickness of chip profile, determine whether to remove passivation layer, if then continue grinding after changing sand paper, otherwise, continue grinding and observe the surface formed in time; Or, directly observed the pattern of each layer in cross-section structure by ESEM, can determine whether removed passivation layer or be ground to layer to be seen.Another kind method is, in process of lapping, directly in the color change on the surface that the grinding of metallography microscope Microscopic observation chip is formed, the method without the need to making section and speed is fast, but is only applicable to veteran operating personnel.
Based on technique scheme, in the embodiment of the present invention, by chip to be seen is fixed on a body surface, the sand paper of the first granularity or lapping liquid is adopted to grind the passivation layer removing chip to be seen by polisher lapper, and the sand paper of the second granularity adopting granularity less than the first granularity continues grinding, until be ground to layer to be seen, with polisher lapper, polishing is carried out to this layer surface to be seen again, thus form chip observation sample, avoid the equipment using the complex precises such as RIE, simple to operate, easy to make, improve the efficiency making chip observation sample, save cost, and improve the general applicability making chip observation sample.
Obviously, those skilled in the art can carry out various change and modification to the present invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (8)
1. a chip observation sample production method, is characterized in that, comprising:
Chip to be seen is fixed on a body surface;
The sand paper of the first granularity or lapping liquid is adopted to grind the passivation layer removing described chip to be seen by polisher lapper; And
The sand paper of the second granularity that granularity is less than the first granularity is adopted to continue grinding, until be ground to layer to be seen;
With polisher lapper, polishing is carried out to described layer surface to be seen, form chip observation sample; Described chip observation sample is used for observing the key stratum of described observation chip;
Wherein, the sand paper of described first granularity is the silicon nitride sand paper of granularity 10um; Described lapping liquid is the diamond grinding fluid of granularity 5um;
The sand paper of described second granularity comprises: particle size range is the silicon nitride sand paper of [3um, 7um], or particle size range is the diamond sand paper of [0.5um, 1um].
2. the method for claim 1, is characterized in that, described chip to be seen is fixed on a body surface, comprising:
Gim peg or fixed groove are set on the object, so that described chip to be seen is fixed on described body surface;
Or,
Adopt to have and paste the material of character by described chip attach to be seen at described body surface.
3. method as claimed in claim 2, is characterized in that, described in have the material pasting character be paraffin.
4. the method for claim 1, is characterized in that, the silicon nitride sand paper of the sand paper of described second granularity to be granularity be 5um, or granularity is the diamond sand paper of 0.6um.
5. the method for claim 1, is characterized in that, carries out polishing, comprising with polisher lapper to described layer surface to be seen:
On polisher lapper, polishing fluid or polishing powder is adopted to carry out polishing to described layer surface to be seen.
6. method as claimed in claim 5, it is characterized in that, the particle size range of described polishing fluid or polishing powder is [0.04um, 0.08um].
7. method as claimed in claim 6, it is characterized in that, the granularity of described polishing fluid or polishing powder is 0.06um.
8. a chip observation sample making system, comprises chip to be seen, it is characterized in that, also comprise:
Fixed object, for fixing chip to be seen in it on the surface;
Polisher lapper, for adopting the sand paper of the first granularity or lapping liquid grinding to remove the passivation layer of described chip to be seen, and adopts the sand paper of the second granularity that granularity is little than the first granularity to continue to grind, until be ground to layer to be seen; Carry out polishing to described layer surface to be seen again, form chip observation sample, described chip observation sample is used for observing the key stratum of described observation chip;
Wherein, the sand paper of described first granularity is the silicon nitride sand paper of granularity 10um; Described lapping liquid is the diamond grinding fluid of granularity 5um;
The sand paper of described second granularity comprises: particle size range is the silicon nitride sand paper of [3um, 7um], or particle size range is the diamond sand paper of [0.5um, 1um].
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110355439.2A CN103107110B (en) | 2011-11-10 | 2011-11-10 | A kind of chip observation sample production method and system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110355439.2A CN103107110B (en) | 2011-11-10 | 2011-11-10 | A kind of chip observation sample production method and system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103107110A CN103107110A (en) | 2013-05-15 |
| CN103107110B true CN103107110B (en) | 2016-04-06 |
Family
ID=48314869
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110355439.2A Active CN103107110B (en) | 2011-11-10 | 2011-11-10 | A kind of chip observation sample production method and system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103107110B (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104422606B (en) * | 2013-08-27 | 2017-03-29 | 中芯国际集成电路制造(上海)有限公司 | A kind of chip failure analyzes the preparation method of sample |
| CN103698349B (en) * | 2013-12-31 | 2016-09-28 | 上海新阳半导体材料股份有限公司 | A kind of detection method of TSV electro-coppering annealing effect |
| CN103913364A (en) * | 2014-04-18 | 2014-07-09 | 武汉钢铁(集团)公司 | Sample preparation method for electron back scattering diffraction analysis of thin steel and iron material |
| CN105699875B (en) * | 2016-01-15 | 2019-02-19 | 工业和信息化部电子第五研究所 | The detection method of multiple layer of copper interconnection wiring structure |
| CN109521080A (en) * | 2017-09-19 | 2019-03-26 | 台湾积体电路制造股份有限公司 | Analyze method of the test piece and preparation method thereof with material analysis |
| CN108387417B (en) * | 2018-02-01 | 2021-12-14 | 北京工业大学 | Method for preventing influence of embedding material on sample test data |
| CN112378693B (en) * | 2020-11-30 | 2023-03-31 | 青岛歌尔微电子研究院有限公司 | Chip welding pad slicing method |
| CN113945434A (en) * | 2021-08-09 | 2022-01-18 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Chip layer removing processing method and system |
| CN114800107B (en) * | 2022-06-27 | 2022-12-09 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Chip layer removal adjusting device and sample preparation method |
| CN115808341B (en) * | 2022-12-27 | 2024-01-26 | 胜科纳米(苏州)股份有限公司 | Grinding sample preparation method of semiconductor chip sample section |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3949941B2 (en) * | 2001-11-26 | 2007-07-25 | 株式会社東芝 | Semiconductor device manufacturing method and polishing apparatus |
| CN1289261C (en) * | 2003-07-16 | 2006-12-13 | 上海新华霞实业有限公司 | Grind process for optical sapphire crystal substrate |
| US7098047B2 (en) * | 2003-11-19 | 2006-08-29 | Intel Corporation | Wafer reuse techniques |
| CN101010758A (en) * | 2004-06-28 | 2007-08-01 | Tdk株式会社 | Method for manufacturing multilayer electronic component |
-
2011
- 2011-11-10 CN CN201110355439.2A patent/CN103107110B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN103107110A (en) | 2013-05-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103107110B (en) | A kind of chip observation sample production method and system | |
| Li et al. | Damage evolution and removal behaviors of GaN crystals involved in double-grits grinding | |
| Gu et al. | Investigation of grinding modes in horizontal surface grinding of optical glass BK7 | |
| JP2018171705A (en) | Glass edge finishing method | |
| CN104819876A (en) | Preparation method of transmission electron microscopy film sample for in-situ application of electric field and stress | |
| CN103983499B (en) | A kind of observational technique to zirconium-base amorphous alloy internal shear band | |
| CN103335877B (en) | A kind of method preparing metal thin film metallographic structure sample | |
| Sun et al. | Analytical and experimental study on micro-grinding surface-generated mechanism of DD5 single-crystal superalloy using micro-diamond pencil grinding tool | |
| Wang et al. | Investigation of diamond wheel topography in Elliptical Ultrasonic Assisted Grinding (EUAG) of monocrystal sapphire using fractal analysis method | |
| CN103688344A (en) | CMP pad conditioner | |
| CN106153413A (en) | Carbonate rock detritus microscopic void molding method | |
| CN206862735U (en) | Suitable for rod, the fixture of wire rod metallographic specimen | |
| CN102646566B (en) | The SEM sample clamp observed for online SEM and SEM sample observation method | |
| CN110231205A (en) | The metallographic specimen of industrially pure titanium TA1 and TA2 mechanically polish method for making sample | |
| CN106826601A (en) | The method of CMP pad dresser of the manufacture with bitellos monocrystalline | |
| CN102513906B (en) | Sapphire substrate polishing process | |
| Zhong-yu et al. | Ultra-smooth Cu surface fabricated by hydrodynamic suspension polishing technique | |
| Tao et al. | Ductile deformation and subsurface damage evolution mechanism of silicon wafer induced by ultra-precision grinding process | |
| Zhankui et al. | Effect of material structure on spinel machinability in its fixed abrasive lapping | |
| CN107779941A (en) | Electrolytic polishing liquid, its preparation method and alloy electrolytic polishing method | |
| CN106814093A (en) | A kind of aerospace nickel electrode ceramic capacitor reliability determines method | |
| CN113092200A (en) | Method for rapidly obtaining grain size of nickel electrode ceramic capacitor | |
| CN105181427A (en) | Detection method and characterization method of microporous defects of cold-drawn seamless steel pipe | |
| CN107986265A (en) | A kind of Rapid Circulation formula graphene mechanical stripping device | |
| Zhong et al. | Investigation of subsurface damage of ground glass edges |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20220718 Address after: 518116 founder Microelectronics Industrial Park, No. 5, Baolong seventh Road, Baolong Industrial City, Longgang District, Shenzhen, Guangdong Province Patentee after: SHENZHEN FOUNDER MICROELECTRONICS Co.,Ltd. Address before: 100871, Beijing, Haidian District Cheng Fu Road 298, founder building, 9 floor Patentee before: PEKING UNIVERSITY FOUNDER GROUP Co.,Ltd. Patentee before: SHENZHEN FOUNDER MICROELECTRONICS Co.,Ltd. |