CN110629171B - Binding method of planar small-specification sputtering target used in testing machine - Google Patents
Binding method of planar small-specification sputtering target used in testing machine Download PDFInfo
- Publication number
- CN110629171B CN110629171B CN201910912010.5A CN201910912010A CN110629171B CN 110629171 B CN110629171 B CN 110629171B CN 201910912010 A CN201910912010 A CN 201910912010A CN 110629171 B CN110629171 B CN 110629171B
- Authority
- CN
- China
- Prior art keywords
- binding
- back plate
- copper back
- target
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention relates to a binding method of a planar small-specification sputtering target used in a testing machine, which comprises the following steps: the method comprises the following steps: copper back plate and target blank pretreatment: carrying out sand blasting treatment on the binding surfaces of the copper back plate and the target blank respectively; step two: preparing high-temperature glue: stirring the two-component silicone elastomer; step three: binding treatment: selecting a binding layer, and uniformly coating the prepared high-temperature glue on the binding surfaces of the copper back plate and the target blank; spreading the binding layer on the copper back plate coated with the high-temperature glue; the glued surface of the target blank is downward, so that the target blank is completely attached to the copper back plate; and (5) solidifying the high-temperature adhesive to finish the target binding operation. The invention avoids the high-temperature operation of the binding procedure and lightens the labor intensity; the copper back plate is bound under the low-temperature condition, so that the deformation of the copper back plate is avoided, and the flatness requirement of the target material is met; the binding material high-temperature adhesive has high failure temperature, and meets the requirement of the target material on a high-melting-point binding layer; the method is simple to operate, and has high efficiency and low cost compared with the common binding technology.
Description
Technical Field
The invention relates to the technical field of target binding, in particular to a binding method of a planar small-specification sputtering target used in a testing machine.
Background
In research institutions, colleges or coating manufacturers, laboratories have many coating machines to perform various film series researches. Considering the factors of cost, operation and the like, the structure of the experimental film plating machine is often simpler, no cathode system with a complicated mass production machine type exists, the used target material has small specification, and the general common specification is as follows: 2-4 inches in diameter and about 6 mm thick. The cooling system of the device is therefore relatively simple, which puts higher demands on the target binding, mainly the flatness of the target and the melting point of the binding layer.
The target materials used by the tester type are various in types, including metal, nonmetal, compound and mixture to various alloys. Various types of targets have different experimental conditions, particularly ceramic compounds and mixtures, and the problems that the relative density is low, the brittleness is high, cracking is easy to occur in the common binding process and the like are solved.
In order to increase the melting point temperature of the welding layer, a binding material with a higher melting point must be used, which means that the temperature of the binding worktable is increased. An increase in binding temperature is prone to the following consequences: 1. because the copper back plate of the target material is thin, the back plate is deformed due to the rise of the platform temperature, so that the heating is uneven, and the target material is easy to crack during binding. 2. The ceramic target is bound at a high temperature, the copper back plate is seriously deformed, and the flatness of the target cannot meet the use requirement due to the fact that the ceramic is fragile and the like and cannot be corrected.
Therefore, the planar test type sputtering target has higher requirements on the target binding technology: 1. the binding material has a high melting point; 2. the binding temperature is as low as possible, the sputtering copper back plate and the deformation of the material.
Disclosure of Invention
Technical problem to be solved
In order to solve the problems in the prior art, the invention provides a binding method of a planar small-specification sputtering target used in a testing machine, which is simple to operate, has high efficiency and low cost compared with the common binding technology, avoids high-temperature operation of a binding procedure, and reduces the labor intensity.
(II) technical scheme
In order to achieve the purpose, the invention adopts the main technical scheme that:
a binding method of a planar small-specification sputtering target used in a testing machine comprises the following steps:
the method comprises the following steps: copper back plate and target blank pretreatment:
a) and sand blasting of the binding surface: sand blasting treatment is respectively carried out on the binding surfaces of the copper back plate and the target blank,
step two: preparing high-temperature glue:
d) stirring the two-component silicone elastomer for 3-5 minutes to ensure that the color of the suspension liquid is uniform to form high-temperature glue;
step three: binding treatment:
e) selecting a binding layer, and then selecting a binding layer,
f) the binding surface of the copper back plate faces upwards;
g) uniformly coating the prepared high-temperature glue on the binding surfaces of the copper back plate and the target blank,
h) spreading the binding layer on the copper back plate coated with the high-temperature glue;
j) the gluing surface of the target blank is downward, and the target blank is attached to the copper back plate (1) in a single-side covering mode;
k) pressing a weight on the target surface of the target embryo to preliminarily fix the position;
l) after the position of the target blank is adjusted, a weight is pressed again to enable the target blank to be completely attached to the copper back plate, the thickness is just the thickness of the binding layer, the target blank, the binding layer and the copper back plate are in good contact, and the overall conductivity of the target material is ensured;
m), solidifying the high-temperature glue;
and n), removing redundant high-temperature adhesive after the high-temperature adhesive is completely solidified, and removing the exposed part of the binding layer to finish the target binding operation.
Further, the binding surface of the copper back plate and the target blank is subjected to sand blasting treatment and then is subjected to the following steps:
b) a groove with the depth of more than 1mm is formed around the binding surface of the copper back plate by using an adhesive tape, so that a glue pool is formed after the copper back plate and the adhesive tape are bound;
c) and adhering the non-binding surface and the side surface of the target blank by using an adhesive tape to form a protective layer.
Further, the two-component silicone elastomer comprises a black two-component silicone elastomer and a white two-component silicone elastomer, and the two components are mixed according to the proportion of 50:50 wt%.
Furthermore, the binding layer is a copper mesh with the mesh number of 90, the binding layer is cut according to the specification of the target blank, the size of a single edge at the periphery is small by 1mm, and burrs are trimmed.
Further, the following steps are carried out after the step h) of processing:
i) and pouring high-temperature glue onto the copper back plate paved with the binding layer to form a glue pool with the depth of more than 0.5 mm.
Further, the high-temperature glue solidification treatment comprises the following steps: and (3) placing the copper back plate and the target blank processed in the step (l) on a heating platform, wherein the heating temperature of the heating platform is 50-100 ℃, and preserving heat for 3-5 hours, or placing the copper back plate and the target blank processed in the step (l) at normal temperature for 24-36 hours for drying, and solidifying the high-temperature glue.
Furthermore, the adhesive tape is a polyimide high-temperature adhesive tape, and has a thickness of 0.08mm and a width of 20 mm.
Further, the blasting conditions are as follows: compressed air 5kg, sand mold: 16# white corundum, roughness: ra3.2-12.5.
Further, the coating requirements in step g) are: and uniformly and repeatedly coating until the high-temperature glue completely covers the binding surfaces of the copper back plate and the target blank, no binding surface is exposed, and the coating thickness is 0.2-0.3 mm.
(III) advantageous effects
The invention has the beneficial effects that: (1) the high-temperature operation of the binding procedure is avoided, and the labor intensity is reduced;
(2) the copper back plate is bound under the low-temperature condition, so that the deformation of the copper back plate is avoided, and the flatness requirement of the target material is met;
(3) the binding material high-temperature adhesive has high failure temperature, and meets the requirement of the target material on a high-melting-point binding layer;
(4) the method is simple to operate, and has high efficiency and low cost compared with the common binding technology.
Drawings
FIG. 1 is a schematic view of the processing of a copper backplane according to one embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a copper backing plate and a target blank according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a target blank, a copper mesh and a copper backing plate according to an embodiment of the present invention.
[ description of reference ]
1: a copper back plate;
2: a glue pool;
3: an adhesive tape;
4: a target embryo;
5: a copper mesh;
6: and (5) a heavy object.
Detailed Description
For the purpose of better explaining the present invention and to facilitate understanding, the present invention will be described in detail by way of specific embodiments with reference to the accompanying drawings.
Example (b):
a binding method of a planar small-specification sputtering target used in a testing machine comprises the following steps:
the method comprises the following steps: copper back plate 1 and target blank 4 pretreatment:
a) and sand blasting of the binding surface: carrying out sand blasting treatment on binding surfaces of the copper back plate 1 and the target blank 4 respectively, wherein the sand blasting conditions are as follows: compressed air 5kg, sand mold: 16# white corundum, area: the total area of the binding surface of the target embryo, the roughness: ra3.2-12.5; oxide skin is removed, the surface roughness of the target is improved, the contact area of the high-temperature adhesive with the copper back plate 1 and the target blank 4 is increased, and the bonding force is improved;
b) a groove with the depth of more than 1mm is formed in the periphery of the binding surface of the copper back plate 1 by the adhesive tape 3, so that the copper back plate 1 and the adhesive tape 3 form a glue pool 2 after binding, high-temperature glue cannot flow away through the periphery to influence the bonding rate, the high-temperature glue is used for protecting the polyimide high-temperature adhesive tape of the target blank 4 conveniently, the high-temperature glue has good mechanical performance, the enclosed retainer ring has certain strength, the thickness and the width of the specification are 0.08mm and 20mm, and the side surface of the copper back plate 1 can be completely attached to ensure the strength; as shown in fig. 1;
c) the non-binding surface and the side surface of the target blank 4 are attached by the adhesive tape 3 to form a protective layer, so that the high-temperature adhesive is prevented from contaminating other parts of the target blank 4 and cannot be cleaned, and particularly ceramic target materials are prevented; adhesive tape 3 adopts polyimide high temperature adhesive tape, and this kind of glue adhesion is strong, can fine protection target embryo 4, easily tears after binding, is glued the surface and does not leave the cull, makes things convenient for target embryo surface cleaning, specification: the thickness is 0.08mm, and the width is larger than the width of the target embryo, so that the target embryo 4 is prevented from being polluted by high-temperature glue through gaps because the target embryo is not spliced and attached at one time;
step two: preparing high-temperature glue:
d) mixing the black two-component silicone elastomer and the white two-component silicone elastomer according to the proportion of 50:50 wt%, and stirring for 3-5 minutes to ensure that the suspension liquid has uniform color to form high-temperature glue;
step three: binding treatment:
e) selecting a binding layer, wherein the binding layer is a copper mesh 5 with the mesh number of 90, cutting is carried out according to the specification of a target blank 4, the size of a single edge at the periphery is small by 1mm, and rough edges are trimmed;
the copper mesh 5 is laid between the target blank 4 and the copper back plate 1: the thickness of the binding layer is ensured, the distribution of high-temperature glue is ensured through the action of the grids of the copper mesh 5, the bonding rate is improved, and the conductivity of the binding layer is ensured through the distributed copper mesh 5;
f) placing the copper back plate 1 on a heating platform, wherein the binding surface of the copper back plate 1 faces upwards;
g) the prepared high-temperature glue is uniformly coated on the binding surfaces of the copper back plate 1 and the target blank 4, and the coating requirements are as follows: uniformly and repeatedly coating until the high-temperature glue completely covers the binding surfaces of the copper back plate 1 and the target blank 4, no binding surface is exposed, and the coating thickness is 0.2-0.3 mm;
coating benefits: 1. compared with interference fit in fit, the target blank 4 and the copper back plate 1 are both covered by high-temperature glue during fitting, so that the bonding rate is ensured; 2. the surfaces of the target blank 4 and the copper back plate 1 are provided with sand-blasted fine pits, and high-temperature glue is repeatedly covered, so that the pits can be filled with the high-temperature glue, and the binding force is improved;
h) paving the cut copper mesh 5 on the copper back plate 1 coated with the high-temperature glue;
i) pouring high-temperature glue onto the copper back plate 1 paved with the copper mesh 5 to form a glue pool 2 with the depth of more than 0.5 mm;
j) the gluing surface of the target blank 4 is downward, the target blank 4 is attached to the copper back plate 1 in a single-side covering mode, so that air in the middle is removed as far as possible during attachment, and the adhesion rate is guaranteed, as shown in fig. 2;
k) pressing a weight 6 on the target surface of the target blank 4, fixing the position preliminarily, and measuring the weight of the weight 6 through a depth gauge, so that the weight of the target blank 4, the copper mesh 5 and the copper back plate 1 which are completely attached can achieve the fixing effect and cannot crush the target blank due to excessive weight;
l) adjusting the position of the target blank 4, then re-pressing the weight 6 to ensure that the target blank 4 is completely attached to the copper back plate 1, the thickness is just the thickness of the copper mesh 5, the target blank 4, the copper mesh 5 and the copper back plate 1 are in good contact, and the overall conductivity of the target material is ensured, as shown in fig. 3;
m), starting a heating platform, and keeping the temperature at 50-100 ℃ for 3-5 hours, or keeping the temperature at normal temperature for 24-36 hours for drying to solidify the high-temperature adhesive;
n), removing redundant high-temperature glue after the high-temperature glue is completely solidified, removing the copper mesh 5 exposed out of the binding layer, and tearing off the protective adhesive tape 3 of the target blank 4, thereby completing the target binding operation.
The failure temperature of the high-temperature adhesive is 350 ℃, the requirement of a target material on the high melting point of the binding layer is met, the binding working temperature is less than 100 ℃ or normal temperature, and the requirement of low binding operation temperature is met; the organic high-temperature adhesive is an elastomer, has good heat conductivity, and meets the requirement of a target material on the performance of a binding layer. The conductivity is good through the special processing method of the binding layer.
The weight 6 of the present embodiment may be replaced with a device for applying pressure such as hydraulic pressure or pneumatic pressure.
The above binding to the target material has the effects of: the high-temperature operation of the binding procedure is avoided, and the labor intensity is reduced; the copper back plate is bound under the low-temperature condition, so that the deformation of the copper back plate is avoided, and the flatness requirement of the target material is met; the binding material high-temperature adhesive has high failure temperature, and meets the requirement of the target material on a high-melting-point binding layer; the method is simple to operate, and has high efficiency and low cost compared with the common binding technology.
The above description is only a preferred embodiment of the present invention, and all equivalent changes and modifications made in accordance with the claims of the present invention should be covered by the present invention.
Claims (4)
1. A binding method of a planar small-specification sputtering target used in a testing machine is characterized by comprising the following steps:
the method comprises the following steps: pretreatment of a copper back plate (1) and a target blank (4):
a) and sand blasting of the binding surface: carrying out sand blasting treatment on the binding surfaces of the copper back plate (1) and the target blank (4) respectively,
step two: preparing high-temperature glue:
d) stirring the two-component silicone elastomer for 3-5 minutes to ensure that the color of the suspension liquid is uniform to form high-temperature glue; the two-component silicone elastomer comprises a black two-component silicone elastomer and a white two-component silicone elastomer, wherein the two components are mixed according to the proportion of 50:50 wt%;
step three: binding treatment:
e) selecting a binding layer, and then selecting a binding layer,
f) the binding surface of the copper back plate (1) faces upwards;
g) uniformly coating the prepared high-temperature glue on the binding surfaces of the copper back plate (1) and the target blank (4), wherein the coating requirement in the step g) is as follows: uniformly and repeatedly coating until the high-temperature glue completely covers the binding surfaces of the copper back plate (1) and the target blank (4), no binding surface is exposed, and the coating thickness is 0.2-0.3 mm;
coating benefits: compared with interference fit in fit, the target blank and the copper back plate are both covered by high-temperature glue during fitting, and the bonding rate is ensured; the surfaces of the target blank and the copper back plate are provided with sand-blasted fine pits, and high-temperature glue is repeatedly covered on the target blank and the copper back plate, so that the pits can be filled with the high-temperature glue, and the binding force is improved;
h) spreading the binding layer on the copper back plate (1) coated with the high-temperature glue; after the step h), the following steps are carried out:
i) pouring high-temperature glue onto the copper back plate (1) paved with the binding layer to form a glue pool (2) with the depth of more than 0.5 mm;
j) the gluing surface of the target blank (4) faces downwards, and the target blank (4) is attached to the copper back plate (1) in a single-side covering mode;
k) pressing a weight (6) on the target surface of the target blank (4) to preliminarily fix the position;
l) after the position of the target blank (4) is adjusted, a weight (6) is pressed again to ensure that the target blank (4) is completely attached to the copper back plate (1), the thickness is just the thickness of the binding layer, the target blank (4), the binding layer and the copper back plate (1) are in good contact, and the overall conductivity of the target material is ensured;
m), solidifying the high-temperature glue; the high-temperature glue is subjected to solidification treatment as follows: placing the copper back plate (1) and the target blank (4) processed in the step l) on a heating platform, wherein the heating temperature of the heating platform is 50-100 ℃, and preserving heat for 3-5 hours, or placing the copper back plate (1) and the target blank (4) processed in the step l) at normal temperature for 24-36 hours for drying, so that the high-temperature glue is solidified;
n), removing redundant high-temperature adhesive after the high-temperature adhesive is completely solidified, and removing the exposed part of the binding layer to finish the target binding operation;
carrying out sand blasting treatment on the binding surface of the copper back plate (1) and the target blank (4), and then carrying out the following steps:
b) a groove with the depth of more than 1mm is surrounded by the adhesive tape (3) on the periphery of the binding surface of the copper back plate (1), so that the copper back plate (1) and the adhesive tape (3) form a glue pool (2) after being bound;
c) and bonding the non-binding surface and the side surface of the target blank (4) by using an adhesive tape (3) to form a protective layer.
2. The method for binding a planar small-specification sputtering target material used in a testing machine according to claim 1, wherein the binding layer is a 90-mesh copper mesh (5) cut according to the specification of the target blank (4), the size of a single side at the periphery is 1mm smaller, and burrs are trimmed.
3. The method for binding the planar small-specification sputtering target material used in the testing machine according to claim 1, wherein the adhesive tape (3) is a polyimide high-temperature adhesive tape with a thickness of 0.08mm and a width of 20 mm.
4. The method for bonding the planar small-specification sputtering target material used in the testing machine according to claim 1, wherein the sand blasting conditions are as follows: compressed air 5kg, sand mold: 16# white corundum, roughness: ra3.2-12.5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910912010.5A CN110629171B (en) | 2019-09-25 | 2019-09-25 | Binding method of planar small-specification sputtering target used in testing machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910912010.5A CN110629171B (en) | 2019-09-25 | 2019-09-25 | Binding method of planar small-specification sputtering target used in testing machine |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110629171A CN110629171A (en) | 2019-12-31 |
| CN110629171B true CN110629171B (en) | 2022-02-01 |
Family
ID=68974157
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910912010.5A Active CN110629171B (en) | 2019-09-25 | 2019-09-25 | Binding method of planar small-specification sputtering target used in testing machine |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110629171B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113088898A (en) * | 2021-03-10 | 2021-07-09 | 先导薄膜材料（广东）有限公司 | Binding method of low-melting-point target material |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69231757T2 (en) * | 1991-08-23 | 2001-11-15 | Applied Materials Inc | Process for the deposition of a metallic material for the production of integrated circuits |
| CN109423614A (en) * | 2017-08-22 | 2019-03-05 | 宁波江丰电子材料股份有限公司 | Target material assembly manufacturing method |
| CN110184573A (en) * | 2019-06-28 | 2019-08-30 | 成都先锋材料有限公司 | The binding material and binding method of sputtering target material |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102268234A (en) * | 2011-06-30 | 2011-12-07 | 郑州中原应用技术研究开发有限公司 | Double-component silicone seal glue for solar battery pack and glue-injecting process thereof |
| CN110017318B (en) * | 2019-03-27 | 2021-05-28 | 先导薄膜材料（广东）有限公司 | Device and method for elastically binding target material |
-
2019
- 2019-09-25 CN CN201910912010.5A patent/CN110629171B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69231757T2 (en) * | 1991-08-23 | 2001-11-15 | Applied Materials Inc | Process for the deposition of a metallic material for the production of integrated circuits |
| CN109423614A (en) * | 2017-08-22 | 2019-03-05 | 宁波江丰电子材料股份有限公司 | Target material assembly manufacturing method |
| CN110184573A (en) * | 2019-06-28 | 2019-08-30 | 成都先锋材料有限公司 | The binding material and binding method of sputtering target material |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110629171A (en) | 2019-12-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS63162155A (en) | Work mounting method for grinding | |
| CN110132667B (en) | Batch preparation tool and method for adhesive tensile shear strength samples | |
| CN104849643B (en) | A method of improving uniformity when chip removes level | |
| CN110629171B (en) | Binding method of planar small-specification sputtering target used in testing machine | |
| CN107738141A (en) | A kind of chip sample removes the Ginding process of level | |
| CN101750239B (en) | Method for processing composite material test plate | |
| CN108972229A (en) | A kind of bonding during optical effect correction is at disk method | |
| CN113019845A (en) | Gluing process | |
| JP4169501B2 (en) | Preform for producing composite material and method for producing the same | |
| CN111687757B (en) | Rubber substrate ceramic resin abrasive disc and preparation method thereof | |
| CN101000872A (en) | Wafer processing method | |
| CN103406840B (en) | A kind of preparation method of metallographic magnetic abrasive disk | |
| DE2719741A1 (en) | Abrasive disc for slitting semiconductor wafers - is made by bonding galvanically made abrasive disc onto metal disc | |
| CN113063641A (en) | Method for improving uniformity of chip in delamination | |
| CN102192849A (en) | Material for producing slab of semiconductor chip, preparation method and application thereof | |
| CN111318951A (en) | High-precision low-deformation germanium window polishing disc loading device and disc loading method | |
| CN110926891A (en) | Preparation method of metallographic section sample | |
| CN219015641U (en) | Measuring platform of insulating bearing | |
| CN116511005B (en) | Large-area preparation method of neutron absorption coating | |
| CN212497128U (en) | High-precision low-deformation germanium window polishing upper disc device | |
| KR102270392B1 (en) | Wafer polishing head, method of manufacturing waper polishing head and wafer polishing Apparatus having the same | |
| JP3813289B2 (en) | Manufacturing method of rotating surface plate for double-sided lapping machine | |
| JPH0376119A (en) | Grinding of curved surface | |
| CN117804856A (en) | Self-matching nondestructive preparation method of composite material patch-adhered sample | |
| CN117621277A (en) | Crystal bar bonding method and crystal bar assembly |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |