CN1158004A - Composite silicon-on-insulator substrate and method of fabricating the same - Google Patents

Composite silicon-on-insulator substrate and method of fabricating the same Download PDF

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Publication number
CN1158004A
CN1158004A CN96119843A CN96119843A CN1158004A CN 1158004 A CN1158004 A CN 1158004A CN 96119843 A CN96119843 A CN 96119843A CN 96119843 A CN96119843 A CN 96119843A CN 1158004 A CN1158004 A CN 1158004A
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silicon chip
soi substrate
patterns
silicon
calibration pattern
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CN1078738C (en
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滨智宏
新井谦一
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NEC Corp
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NEC Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54493—Peripheral marks on wafers, e.g. orientation flats, notches, lot number
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/102—Mask alignment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/975—Substrate or mask aligning feature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate

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  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
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  • Manufacturing & Machinery (AREA)
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Abstract

The present invention discloses a composite SOI substrate which allows, by use of a conventional visible light aligner, high-precision alignment of insulator film patterns buried in an SOI substrate and patterns which are to be formed on the SOI layer located above it. The composite SOI substrate is fabricated by forming alignment oxide film patterns I a on the periphery of a main surface of a first silicon substrate 10 which also has buried oxide film patterns 1a formed thereon; preparing a second silicon substrate having preferably V-shaped notch sections 9 on its periphery to expose the alignment patterns provided on the first silicon substrate; bonding the second silicon substrate to the main surface side of the first silicon substrate 10 while exposing the alignment oxide film patterns 1a; and then thinning the second silicon substrate to form an SOI layer 20a.

Description

Composite silicon-on-insulator substrate and preparation method thereof
The present invention relates to a kind of connection composite silicon-on-insulator substrate structure of (after this claiming SOI), and the manufacture method of this substrate.
Description of related art is as follows: the SOI substrate made from the connection substrate technology be the substrate of sandwich construction of representative along with its improvement that connects performance, recent findings has been widely used.Particularly, those have the SOI substrate such as the insulating barrier of buried silicon oxide layer, by the dielectric separation substrate of practical application as the withstand voltage fields such as power IC of needs height.In the supply unit field, provide soi structure by location on substrate surface, forming high power supply mos field effect transistor (MOSFET) device withstand voltage, that erect thus on single-chip distinguishes, and one low withstand voltage, Control current device district be satisfied with to high density and high withstand voltage requirement, this disclose existing description in flat 4-29353 number speciallyying permit out Willing such as Japan.Making the method for such SOI substrate will 8 set forth with reference to the accompanying drawings.
At first, by RIE (active-ion-etch) or other engraving method at N +The surperficial definite part of type (100) silicon chip 21 forms the high surface step of about 1 μ m.This has demonstration in Fig. 8 (a).On the whole surface of silicon chip 21, form a silicon oxide film 22 by thermal oxidation or other method.The raised area of silicon oxide film 22 is removed by mechanical lapping, and a level and smooth surface that comprises monocrystalline silicon 21 and silicon oxide film 22 is provided.So after this silicon chip that forms will be called as " second " substrate.
Then, as shown among Fig. 8 (b), second silicon chip 21 is turned over, and it comprises the smooth side surface and a N of silicon oxide film 22 -The first type surface of type (100) silicon chip 11 directly connects Face to face, and we are called first substrate.The composite construction that is obtained guarantees its connection by heat treatment.At last, as what show in Fig. 8 (c), predefined thickness is made by grinding and polishing process in the non-connection surface of second silicon chip 21.By this method, on silicon oxide film 22, form the monocrystalline silicon thin film of a high-quality.After this, the monocrystalline silicon layer that so forms will be called as " soi layer ".
This soi layer is further processed in a step in the back, forms a Control current device district.This Control current device district is by now buried silicon oxide layer 22, and is formed at oxide-film 22a in the V-shape groove in second silicon chip 21 and polysilicon film 23 after a while and erects power supply mos field effect transistor (MOSFET) device district dielectric separation.
Here, buried oxide film 22 is required pattern by patterning, and its pattern according to the Control current device that the top in soi layer forms decides.Therefore, on the surface of soi layer, form in the early process step of this device the necessary calibration of finishing the pattern of mask pattern and buried oxide film 22.Yet owing to covered by top soi layer, the pattern of buried oxide film can't be observed with visible light.
A kind of method that is used to observe the structure in the silicon chip that is embedded in connection is to use the image of coming from the infrared light conversion.The Japan relevant with this speciallys permit out Willing and discloses in flat 2-312220 number, has disclosed a kind of calibrator example based on the method.This instrument is used for being formed with on each substrate the calibration of a plurality of substrates of device layer.
To describe with reference to Fig. 7 at the calibration steps of buried sull pattern and mask pattern now, this method is used the principle of infrared calibrator.Fig. 7 has shown the SOI substrate of initial optical alignment in the stage and the profile of a mask of producing a connection SOI substrate.In first silicon chip 10, form and comprise the sull pattern that is used for device sull 1b that separates and the sull 1a that is used to calibrate.Thereby the top on the surface of first silicon chip 10 connects the substrate that a soi layer 20b constitutes a connection.A photoresist film 3 is provided on other face of this soi layer 20b.On connect substrate is the quartz substrate 4 as photomask with 5A and 5B mask pattern, and quartz substrate 4 and the SOI substrate that connects all are designed to movably pattern (wafer chuck and other device do not demonstrate).
Use this structure, by finish the calibration of calibration mask pattern 5A and calibration sull pattern 1a by infrared light 6 image transmitted that place the silicon chip 10 following sources of infrared radiation to launch.
The infrared image that this transmission comes is observed by two or more infrared microscopes.
Common, the visible light calibrator of extensive use can not be used to calibrate the calibration that pattern is embedded in the SOI substrate in it, a therefore necessary source of infrared radiation, an infrared microscope, the wafer chuck of a transmission infrared radiation etc. of providing in addition.In addition, thus owing to the whole surface of having used an infrared radiation source can not shine substrate is restricted the visual field, and since the low contrast of the image that transmission comes make the trickle calibration pattern of identification shape and finish calibration thus and have certain difficulty.This has produced the problem of the low calibration accuracy of about ± 1 μ m naturally.Therefore, because the deviation that the error of calibration causes can not have been damaged the performance of device with exempting from.
In order to overcome the deficiency of above-mentioned prior art, an object of the present invention is to provide one and have the SOI substrate of calibration pattern that can the using visible light calibrator and the method for making this type of SOI substrate.
SOI substrate according to first kind of mode of the present invention is a combined type SOI substrate that comprises one first silicon chip and joining second silicon chip of one and first silicon chip, forms a plurality of insulator film patterns that are included in the calibration pattern on the peripheral part on the first type surface of this first silicon chip; The insulator film pattern shaped surface of one second silicon chip and first silicon chip is joined.According to the SOI substrate of first embodiment be characterised in that comprise insulator film and be formed at first silicon chip around on the calibration pattern after finishing connection, can be revealed.That is to say that the part edge of at least the second silicon chip is removed, perhaps the edge of first silicon chip of Xing Chenging is consistent with the thickness of insulator film reveals so that will calibrate pattern.
The second way of the present invention is a kind of method of the SOI of production substrate, and it comprises: form the step of a plurality of insulator film patterns on the surface of one first silicon chip, these a plurality of patterns are included in it and form in calibration pattern on the periphery; Form the step of a plurality of grooves in the marginal portion of second silicon chip; The insulator film pattern shaped surface of second silicon chip and first silicon chip linked and simultaneously the part of groove is positioned to calibrate on the pattern so that the step that those calibration patterns are revealed.
The third mode of the present invention is a kind of method of the SOI of manufacturing substrate, and it comprises: form the step of the pattern of a plurality of insulator films on the surface of first silicon chip, these a plurality of patterns comprise the calibration pattern that is formed at its edge; And the insulator film pattern profiled surface of second silicon chip that its radius first silicon chip is little and first silicon chip links so that will calibrate the step that pattern reveals.
The 4th kind of mode of the present invention is the method for a SOI substrate of a kind of manufacturing, and it comprises: the step that forms a plurality of insulator film patterns on the surface of first silicon chip that is included in the calibration pattern that forms on its edge; The joining step of insulator film pattern profiled surface with second silicon chip and first silicon chip; And remove the edge of second silicon chip on the edge of first silicon chip so that the step that the calibration pattern that will form reveals.
The 5th kind of mode of the present invention is a kind of method of the SOI of manufacturing substrate, and it comprises: be included in the step that forms a plurality of insulator film patterns on the surface of first silicon chip that forms the calibration pattern on its edge; The joining step of insulator film pattern profiled surface with one second silicon chip and first silicon chip; And grind or etch away the bottom edge of first silicon chip so that comprise the step that the calibration pattern of the insulator film that is connected in second silicon chip reveals.
Below be brief description of drawings of the present invention, will clearer understanding be arranged to above other purpose, advantage and the feature of reaching of the present invention by following description to accompanying drawing.
Fig. 1 is a silicon chip profile of describing according to a first embodiment of the invention.
Fig. 2 is the plane graph of the silicon chip of first embodiment according to the invention description;
Fig. 3 comes the profile of Calibration Method with a mask when using SOI substrate of the present invention;
Fig. 4 is the plane graph according to the silicon chip of second embodiment description according to the present invention;
Fig. 5 is the plane graph according to the silicon chip of the 3rd embodiment description according to the present invention;
Fig. 6 is the plane graph according to the silicon chip of the 4th case description of the present invention;
Fig. 7 is when using the traditional SOI substrate, comes the profile of Calibration Method with mask;
Fig. 8 is the profile of the conventional method of production traditional SOI substrate.
To join accompanying drawing now comes the present invention is set forth.Fig. 1 (a) is to Fig. 1 (d), and reaching Fig. 2 (a) and Fig. 2 (b) is respectively profile and the plane graph of describing according to first embodiment of the invention.
The diameter that making has one (100) orientation first type surface is 5 inches first and second silicon chips.By thermal oxidation or similar approach, on the surface of first silicon chip, form a sull (not shown), be used to the opening of quarter sull pattern 1b after then patterning is formed in the procedure of processing.As an etching mask, first silicon chip 10 is carried out etching with sull, form the dark groove of about 1 μ m.The degree of depth of groove can change according to the characteristic of needed specific device.Remove silicon oxide film then, then form the uniform oxide film that the thickness degree of depth about and groove 2 is complementary by thermal oxidation cryochemistry gas deposition or other method as mask.Afterwards, as shown in Fig. 1 (a) and Fig. 2 (a), by grinding and thereby polishing is removed this sull and stayed original position and be embedded in part in the groove, form device separating oxide film pattern 1b thus in the inside of first silicon chip 10, and on its edge, form calibration sull pattern 1a.Mask Using such method while patterning sull pattern 1b and calibration sull pattern 1a with a single offset printing.Being pointed out that sull pattern 1a and 1b also can be by local oxidation of silicon (LOCOS) provides sull.
The plane (being abbreviated as OFs) 8 that three orientations are arranged on the edge as second silicon chip of seeing in Fig. 2 (b) 20.In these planes, first orientation plane 8a is used for combining with the orientation plane 7 of first silicon chip 10, so that calibrate the crystallographic orientation of two substrates.The second and the 3rd orientation plane 8b and 8c forms necessary length and reveals (for example＜110〉direction length be 40 millimeters) so that will calibrate sull pattern 1a.
Then, as what see in Fig. 1 (b), as suitable placement second and the 3rd orientation plane 8b and 8c, so that it not be can cover the calibration sull pattern 1a that is formed on first silicon chip time, second silicon chip 20 and first silicon chip 10 link.The result who does like this is buried is positioned at the sull pattern 1b that forms at first silicon chip 10 with second silicon chip, 20 interfaces.Be connected into then whole substrate in oxidizing atmosphere in 1100 ℃～1200 ℃ following heat treatments 2 hours to guarantee to connect effect.
As what in Fig. 1 (c), see, be orientated the cross section on planes 8 and the edge of second silicon chip 20 by grinding three of removals.As what see in Fig. 1 d, the backside surface that does not connect of second silicon chip 20 is by grinding and thick soi layer of about 10 μ m of polishing attenuation formation.This soi layer is designed to the thickness of the operation of assurance device.At last, erode a unwanted oxide-film (not shown) that forms at substrate surface during the heat treatment with the hydrofluoric acid of dilution, thereby the SOI substrate 100 of a connection is provided.
As described above, according to the SOI substrate 100 of present embodiment, the calibration sull pattern 1a that appears is arranged on the edge of first silicon chip 10.This tolerable is calibrated by mask with traditional visible light calibrator, and its precision is the order of magnitude of 0.2 μ m.
Sectional view Fig. 3 referring now to SOI substrate and mask comes calibration steps is done elaboration.In Fig. 3, on the surface of the SOI substrate 100 that comprises soi layer 20a, provide photoresist film 3.Quartz substrate 4 of placement on SOI substrate 100, it becomes a mask by the mask pattern that forms thereon.In this mask pattern, calibration mask pattern 5A places and is used to calibrate by visible light along the marginal portion of the calibration sull pattern 1a on quartz substrate 4 and the substrate 10.This has allowed the high-precision calibration that is in the mask pattern 5B on quartz substrate 4 and the sull pattern 1b.Afterwards, the photoresist film 3 that will provide on the surface of soi layer 20a for example is exposed to that wavelength is in the ultraviolet ray of 400nm, so that mask pattern 5B is transformed on the photoresist film 3.Foregoing calibration procedure can high accuracy be finished, because realize on the optical caliper in their available prior arts.
The mask calibration steps of substrate that this application has a calibration pattern guaranteed high-precision calibration by shaping device on first silicon chip that is formed with the standard pattern and with joining second silicon chip of first silicon wafer on the technical process of production multilayer device of shaping device.
Fig. 4 is the plane graph according to a SOI substrate 100A of second embodiment of the invention description.Identical mode places the edge of first silicon chip 10 among calibration sull pattern 1a and first embodiment.Yet V-shaped groove part 9 is formed on the edge of second silicon chip 20, and two slot parts 9 are used for calibration sull pattern is revealed.
Set forth a kind of method of making SOI substrate 100A now.Second silicon chip 20 has the V-shaped groove part 9 of two about 2 millimeters long and about 2 mm wides.The shape of groove can be formulated as required, for example, and U-shaped, trapezoidal or rectangle.Second silicon chip 20 connects in the face of being formed with facing of calibration sull pattern 1a with first silicon chip 10, thereby by slot part 9 sull pattern 1a is revealed.The edge that grinds then and corrode second silicon chip 20 removes non-coupling part.At last, form soi layer 20a by thinning, the unwanted sull that is formed on the substrate surface is removed to form SOI substrate 100A.
According to present embodiment, owing to the calibration pattern is revealed, on the substrate of given diameter, can obtain than according to the more chip product of first embodiment by providing than orientation plane (OFs) area little slot part.Here, though need to prove previously described one second silicon chip with two slot parts that relates to, it also can provide 3 or more groove certainly.
Fig. 5 is the plane graph according to the SOI substrate of third embodiment of the invention description.Similar to first embodiment, calibration sull pattern 1a places on the edge of first silicon chip 10, and by the edge that grinds and corrosion process is removed second silicon chip 20 it is revealed.Because the whole edge of silicon chip is removed, thereby can provide 3 or more calibrate the sull pattern.To set forth a kind of method of making substrate now.By the mode similar, form sull pattern 1a and 1b and prepare second silicon chip 20 then, and it is connected to comprises on the shaping sull pattern 1a and the surface of first silicon chip 10 of 1b thereon to first embodiment.Here, the term harmonization among heat treated condition and first embodiment.Then, along the thick edge of about 1 mm wide, 50 μ m magnitudes of second silicon chip 20, this compound is dipped into such as removing the signal crystal silicon layer that reveals owing to grinding in the nonuniformity etchant solution of potassium hydroxide solution.By setting etching time and solution temperature so that calibration sull pattern 1a is come out.At last, form soi layer 20a, the unwanted oxidation film that is formed at substrate surface is removed and obtains SOI substrate 1OOB.
Different with first embodiment, present embodiment does not need to form OFs, and this guarantees that available traditional monocrystalline silicon substrate that is used for association area is as second silicon chip.In addition, the result who removes the edge of second silicon chip simultaneously also removed the part of non-connection and in the marginal portion the common not tight part of connection, thereby it can not produce fracture and damaged.
Fig. 6 is the sectional view according to the SOI substrate of the 4th embodiment description according to the present invention.It has shown especially at the back side of first silicon chip of the sull that forms rather than second silicon chip and has been removed by corrosion or other method, to form a soi layer and the calibration pattern is revealed.
More particularly, in Fig. 6, with second silicon chip 20 surperficial joining be a useful calibration sull pattern 1a and sull pattern 1b first silicon chip 10 as device isolation.The back side of grinding or handling first silicon chip 10 then with nonuniformity caustic corrosion agent to be forming a soi layer 10a and to make its edge thinning to the thickness identical with sull, thereby calibration sull pattern 1a is revealed.
According to present embodiment, the connection interface of two substrates formed buried oxide film pattern 1b than the lower boundary face.By this structure, connecting space (not coupling part) or the crystal defect that the interface may form, that perhaps catches in connection process may cause the impurity of negatively influencing to be separated by buried sull and soi layer 10a to device performance.Correspondingly, one has the SOI substrate 100c of structure as mentioned above, particularly is in the zone on the soi layer 10a above the buried oxide film, has guaranteed to make the high accuracy device that produces few error.
Though invention has been described by some best example, must clearly not only be confined to these particular instances by the subject area that the present invention comprised.Multiple change improves or variation also is among the scope of theme of the present invention.
For example, with the calibration sull pattern that is formed simultaneously by buried sull pattern, as long as its thickness can be determined (though its limit will decide according to the required performance of device) arbitrarily be in field range in the step of processing SOI substrate among, and when calibration, has discernible film thickness (approximately 100nm or bigger).In addition, though what form in an embodiment of the present invention is the silicon oxide film pattern, this pattern also can be made into such as silicon nitride film (Si 3N 4) or the silicate glass that mixes.In addition because the shape of calibration pattern can determine that the pattern shape can determine as required according to the calibration steps of traditional use visible light, for example, bar shaped, rectangle, orthogonal lattice or the quadrature dot matrix.
As mentioned above, the present invention reveals by the calibration pattern that will comprise the insulator film that is formed on the silicon chip edge, thereby can allow with traditional optical caliper and calibrate, and finishes than calibrating with the higher precision of the method for transmission infrared radiation.In addition, the present invention allows in manufacturing contains the step of semiconductor device of the sandwich construction that forms in the lip-deep device that is formed with calibration silicon chip of pattern and soi layer and produces high-precision calibration.

Claims (14)

1. the SOI substrate of a combined type is characterized in that it comprises:
First silicon chip with a first type surface, described first type surface have the film formed a plurality of patterns of buried insulator in described first type surface, and described a plurality of patterns are included in the calibration pattern on the marginal portion of described first silicon chip; And
One and joining one second silicon chip of described first silicon chip, the described first type surface of described second silicon chip and described first silicon chip links, and wherein the described calibration pattern on the described marginal portion of described first silicon chip appears.
2. combined type SOI substrate according to claim 1 is characterized in that the width of described second silicon chip is narrower than the width of described first silicon chip.
3. combined type SOI substrate according to claim 1 is characterized in that described first silicon chip and described second silicon chip are circular basically, and the radius of described first silicon chip of the radius ratio of wherein said second silicon chip is little.
4. combined type SOI substrate according to claim 1 is characterized in that described second silicon chip has at least two slot parts that are positioned at the marginal portion so that described calibration pattern reveals.
5. combined type SOI substrate according to claim 1 reveals described calibration pattern thereby the part edge at least that it is characterized in that described first silicon chip partly forms and be buried in the consistency of thickness of the described insulator film in the described first type surface.
6. method of making combined type SOI substrate is characterized in that it comprises:
Be formed on the making step of a plurality of patterns of the insulator film in the first type surface of buried first silicon chip, described a plurality of patterns comprise the calibration pattern of the marginal portion that is formed at described first silicon chip;
On the marginal portion of one second silicon chip, form the step of at least two slot parts; And
With described second silicon chip and the joining step of the described first type surface of described first silicon chip, simultaneously described slot part is adjusted on the described calibration pattern so that described calibration pattern reveals.
7. the method for manufacturing combined type SOI substrate according to claim 6 is characterized in that described attachment step is included in the oxidizing atmosphere in 1100 ℃ to 1200 ℃ described first and second silicon chips of following processing.
8. method of making combined type SOI substrate is characterized in that comprising:
Formation is buried in the step of a plurality of patterns of the insulator film in the first type surface of first silicon chip, and described a plurality of patterns are included in the calibration pattern that forms on the marginal portion of described first silicon chip; And
The joining step of described first type surface, the lateral width of described second silicon chip with second silicon chip and described first silicon chip than the narrow of described first silicon chip so that described calibration pattern reveal.
9. the method for manufacturing combined type SOI substrate according to claim 8 is characterized in that described attachment step is included in the oxidizing atmosphere in 1100 ℃ to 1200 ℃ described first and second silicon chips of following processing.
10. the method for manufacturing combined type SOI substrate according to claim 8 is characterized in that described first silicon chip and described second silicon chip are that radius circular and described first silicon chip of radius ratio described second silicon chip is little basically.
11. a method of making combined type S0I substrate is characterized in that comprising:
Form the step of a plurality of patterns of insulator film on the first type surface of first silicon chip, described a plurality of patterns are included in the calibration pattern that forms on the marginal portion of described first silicon chip;
The joining step of first type surface with second silicon chip and described first silicon chip; And
Remove the marginal portion of described second silicon chip so that be formed at the step that the described calibration pattern on described first silicon chip reveals for one.
12. the method for manufacturing combined type SOI substrate according to claim 11 is characterized in that described attachment step is included in the oxidizing atmosphere in 1100 ℃ to 1200 ℃ described first and second silicon chips of following processing.
13. a method of making combined type SOI substrate is characterized in that comprising:
Formation is buried in the step of a plurality of patterns of the insulator film in the first type surface of described first silicon chip, and described a plurality of patterns are included in the step of the calibration pattern that forms on the marginal portion of described first silicon chip;
The joining step of described first type surface with second silicon chip and described first silicon chip; And
Remove described marginal portion from surface for one, so that the described described insulator film calibration pattern that comprises in the marginal portion that is embedded in described first type surface reveals with respect to the described first type surface of described first silicon chip.
14. the method for manufacturing combined type SOI substrate according to claim 13 is characterized in that described attachment step is included in 1100 ℃ to 1200 ℃ following first and second silicon chips of handling in the oxidizing atmosphere.
CN96119843A 1995-09-28 1996-09-27 Composite silicon-on-insulator substrate and method of fabricating the same Expired - Fee Related CN1078738C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP251556/95 1995-09-28
JP25155695 1995-09-28

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