SG116475A1 - Bonded soi wafer with <100> device layer and <110>substrate for performance improvement. - Google Patents

Bonded soi wafer with <100> device layer and <110>substrate for performance improvement.

Info

Publication number
SG116475A1
SG116475A1 SG200300325A SG200300325A SG116475A1 SG 116475 A1 SG116475 A1 SG 116475A1 SG 200300325 A SG200300325 A SG 200300325A SG 200300325 A SG200300325 A SG 200300325A SG 116475 A1 SG116475 A1 SG 116475A1
Authority
SG
Singapore
Prior art keywords
substrate
device layer
soi wafer
performance improvement
bonded soi
Prior art date
Application number
SG200300325A
Inventor
Chen Haur-Ywh
Chan Yi-Ling
Yang Kuo-Nan
Yang Fu-Liang
Hu Chen-Ming
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from TW91102030A external-priority patent/TW543150B/en
Priority claimed from US10/355,872 external-priority patent/US6784071B2/en
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Publication of SG116475A1 publication Critical patent/SG116475A1/en

Links

SG200300325A 2002-02-05 2003-02-05 Bonded soi wafer with <100> device layer and <110>substrate for performance improvement. SG116475A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW91102030A TW543150B (en) 2002-02-05 2002-02-05 Structure of bonded wafer
US10/355,872 US6784071B2 (en) 2003-01-31 2003-01-31 Bonded SOI wafer with <100> device layer and <110> substrate for performance improvement

Publications (1)

Publication Number Publication Date
SG116475A1 true SG116475A1 (en) 2005-11-28

Family

ID=35542878

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200300325A SG116475A1 (en) 2002-02-05 2003-02-05 Bonded soi wafer with <100> device layer and <110>substrate for performance improvement.

Country Status (1)

Country Link
SG (1) SG116475A1 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5869386A (en) * 1995-09-28 1999-02-09 Nec Corporation Method of fabricating a composite silicon-on-insulator substrate
US6159824A (en) * 1997-05-12 2000-12-12 Silicon Genesis Corporation Silicon-on-silicon wafer bonding process using a thin film blister-separation method
US6271101B1 (en) * 1998-07-29 2001-08-07 Semiconductor Energy Laboratory Co., Ltd. Process for production of SOI substrate and process for production of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5869386A (en) * 1995-09-28 1999-02-09 Nec Corporation Method of fabricating a composite silicon-on-insulator substrate
US6159824A (en) * 1997-05-12 2000-12-12 Silicon Genesis Corporation Silicon-on-silicon wafer bonding process using a thin film blister-separation method
US6271101B1 (en) * 1998-07-29 2001-08-07 Semiconductor Energy Laboratory Co., Ltd. Process for production of SOI substrate and process for production of semiconductor device

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