CN115733048A - Semiconductor laser for medical cosmetology and packaging method thereof - Google Patents
Semiconductor laser for medical cosmetology and packaging method thereof Download PDFInfo
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- CN115733048A CN115733048A CN202110975251.1A CN202110975251A CN115733048A CN 115733048 A CN115733048 A CN 115733048A CN 202110975251 A CN202110975251 A CN 202110975251A CN 115733048 A CN115733048 A CN 115733048A
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Abstract
The invention relates to a semiconductor laser for medical cosmetology and a packaging method thereof. The laser comprises a water-flowing heat sink, the front surface of the water-flowing heat sink is a welding surface, an ALN ceramic chip is arranged on the welding surface, and a bar array is arranged on the ALN ceramic chip; a water through opening is formed in the back of the water through heat sink, and a water through channel is connected to the water through opening; the upper surface of the water-passing heat sink is provided with an electrode plate A, the side surface of the water-passing heat sink is provided with an electrode plate connecting groove, and an electrode plate B and an electrode plate C are arranged in the electrode plate connecting groove. According to the semiconductor laser, the water through hole is formed in the back face of the laser and is in the same plane with the electrode binding post, the laser adopts a back water outlet structure, the water through hole is led out from the back end, the using space is effectively reduced, the integration level is higher, the volume of the back end application is reduced, compared with the water outlet holes from other directions, a water channel can be conveniently communicated by a worker, and the semiconductor laser is mainly applied to the field of medical cosmetology and is convenient for the worker to use.
Description
Technical Field
The invention relates to a semiconductor laser for medical cosmetology and a packaging method thereof, belonging to the field of semiconductor laser stacked array packaging.
Background
The semiconductor laser has wide application in the field of medical cosmetology due to the characteristic of current injection pumping and the selectable advantage of wavelength, and in the application in the field, according to the selective photothermal dynamics principle, laser with specific wavelength and energy penetrates through the skin surface layer of a human body, reaches the root hair follicle of hair on the premise of not damaging the skin tissue of the human body, and the laser is absorbed by melanin in the hair follicle and converted into heat energy, so that the hair follicle is damaged and removed, the regeneration capacity of the hair follicle is lost, and the effect of purifying the skin surface is achieved.
In the field of medical beauty application, a packaging form that a plurality of light emitting chips form a bar and a plurality of bars are packaged to form a laser stack array is a main method for power expansion of a semiconductor laser, and at present, the high-power laser stack array packaged by the bars is widely applied to the medical beauty industry. With the application of semiconductor lasers in the medical beauty field becoming mature, the lasers are developing towards miniaturization, high integration and high comfort.
Chinese patent document CN102961185A discloses a semiconductor laser system for laser medical cosmetology, which comprises a semiconductor laser array, an optical waveguide, an optical window, a series of devices such as a refrigerating unit for conducting and cooling a contact window, wherein a refrigerating block comprises a base part and a hollow head part positioned above the base part, and the front part of the hollow head part integrally adheres and fastens the side wall of the contact window; the light outlet end of the optical waveguide is positioned in the cavity of the hollow head part, and a gap is reserved between the light outlet end of the optical waveguide and the inner wall of the hollow head part; the optical waveguide is clamped and fixed by a pair of groove-shaped fixing blocks, and a gasket with a hollow center is arranged on the contact surface of the optical waveguide and the fixing blocks. The laser system that this patent provided compact structure, the integrated level is high, but too much components and parts are integrated together, and the volume of having increased the laser inevitably, simultaneously, the water passage mouth is located the laser bottom, and is great at water passage department volume, has not satisfied miniaturized, the development trend that integrates.
Chinese patent document CN209401976U discloses a macro-channel semiconductor laser, which comprises a laser module and a heat sink module, wherein the heat sink module comprises a heat sink main body, a water outlet hole arranged at the upper end of the heat sink main body and having a forward opening, and a water inlet hole arranged at the lower end of the heat sink main body and having an upward opening, and the water outlet area of the water inlet hole is not larger than the cross-sectional area. However, the water inlet and outlet of the water channel of the patent are arranged at the bottom, a water supply structure needs to be arranged at the bottom when water is supplied, the volume is increased in the rear end application process, and the use is inconvenient; in the electrode connection process, electrodes are led out through the copper foil and the copper-clad plate, and all interfaces are connected In a welding mode, so that the connection mode has the defects of poor positioning accuracy, poor insulating property and the like under the conditions of high power and large current, and the problem of poor reliability exists because the light-emitting module and the bottom are welded by In solder.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a semiconductor laser for medical cosmetology and a packaging method thereof.
Interpretation of terms:
1. tungsten copper heat sink: a packaging material for laser bar conductive heat dissipation;
2. AlN ceramic plates: the surface metallization is used for anode and cathode insulating materials at the bottom of the bar;
the technical scheme of the invention is as follows:
a semiconductor laser for medical cosmetology comprises a water-passing heat sink, wherein the front surface of the water-passing heat sink is a welding surface, an ALN ceramic chip is arranged on the welding surface, and a bar array is arranged on the ALN ceramic chip; a water through hole is formed in the back of the water through heat sink, and a water through channel is connected to the water through hole; the upper surface of the water-passing heat sink is provided with an electrode plate A, the side surface of the water-passing heat sink is provided with an electrode plate connecting groove, and an electrode plate B and an electrode plate C are arranged in the electrode plate connecting groove; electrode insulation sheets are arranged between the electrode plate A, the electrode plate B, the electrode plate C and the water-through heat sink.
According to the invention, the bar array comprises tungsten-copper heat sinks arranged in parallel, and bars are arranged between adjacent tungsten-copper heat sinks.
More preferably, the tungsten-copper heat sink is made of W90Cu, the length of the tungsten-copper heat sink is 3-10 mm, and the thickness of the tungsten-copper heat sink is 1-2 mm; the number of the bars is more than 1, and the length of the bars is matched with the tungsten-copper heat sink.
According to the invention, the water-through heat sink is internally provided with the heat dissipation sawteeth so as to increase the contact area with water and improve the heat dissipation capability.
According to the invention, the number of the water through openings is preferably 2, and the water through openings are respectively positioned at the top and the bottom of the back of the water through heat sink.
According to the invention, the electrode plate connecting groove is a convex groove, and the electrode insulating sheet is made of ALN ceramic.
According to the invention, the electrode plate B is rectangular, the electrode plate C is L-shaped, the short edge of the electrode plate C is positioned in the electrode plate connecting groove, and the long edge of the electrode plate C is positioned on the back of the water-passing heat sink.
Further preferably, 2L-shaped electrode terminals are arranged on the long edge of the electrode plate C, the electrode terminals are in pressure welding with the electrode plate C through screws, and a T-shaped insulating washer is arranged to ensure insulation between the electrode terminals and the water-filled heat sink. The electrode binding post is convenient for the end user to connect electricity.
According to the invention, the water through heat sink is fixed by the shell and the rear baffle plate package in an asymmetric structure. The shell adopts asymmetric structural design, and is fixed to lead to water at one side and sink to guarantee that the ba tiao is in position placed in the middle, the backplate corresponds the position trompil at water service opening, electrode post, guarantees to connect.
Further preferably, the side surface of the housing is further provided with a fixing hole. Used for fixing the water-through heat sink.
The packaging method of the semiconductor laser for medical cosmetology comprises the following steps:
(1) Welding the ALN ceramic plate to a water-flowing heat sink welding surface through AuSn welding flux;
(2) Welding the tungsten-copper heat sink and the bars together by using AuSn welding flux in a structure of the tungsten-copper heat sink, the bars and the tungsten-copper heat sink to obtain a bar array;
(3) Welding the bar array to the ALN ceramic chip through SnAg solder to realize indium-free packaging;
(4) And welding the electrode insulation sheet to the upper surface of the water-passing heat sink, the electrode sheet connecting groove on the side surface of the water-passing heat sink and the back surface of the water-passing heat sink by SnAg welding flux, and then continuously welding an electrode sheet A, an electrode sheet B and an electrode sheet C on the electrode insulation sheet by using the SnAg welding flux respectively to ensure that the electrode sheet A, the electrode sheet B and the electrode sheet C are in a serial state to finish packaging.
Has the advantages that:
1. according to the semiconductor laser, the water through port is arranged on the back of the laser and is in the same plane with the electrode binding post, the whole structure of the laser adopts rear water outlet, the water through channel is led out from the rear end, the using space is effectively reduced, the integration level is higher, the volume of the rear end application is reduced, compared with the water outlet ports in other directions, the water way is more convenient for workers to connect, and the semiconductor laser is mainly applied to the field of medical cosmetology and is convenient for the workers to use.
2. The semiconductor laser provided by the invention has the advantages that the shell is of an asymmetric structure, the water-passing heat sink is fixed on the side surface of the shell, the central position of the bar is ensured while the water-passing heat sink is packaged and fixed, the size of the laser is further reduced, the integration level is improved, and the back-end use is facilitated. When the invention is used, the electrode plate A, the electrode plate B and the electrode plate C can be sequentially connected in series to lead the electrodes out to the back, and the ALN material is used as an insulating sheet, so that the insulation between the electrode plate A, the electrode plate B and the electrode plate C and the water-through heat sink is realized while the electrode plate A, the electrode plate B and the electrode plate C cross a plurality of planes, the reliability and the positioning of the product are ensured, and the insulation performance is improved.
3. The semiconductor laser provided by the invention is packaged by high-temperature solders with temperature gradients such as AuSn and SnAg, and the like, and a traditional low-temperature In solder packaging stacked array is not used, so that the risk of low reliability brought by the In solder is avoided.
4. The packaging method provided by the invention is simple to operate, high in manufacturing efficiency and suitable for industrial popularization and use.
Drawings
Fig. 1 is a water heat sink structure diagram.
Fig. 2 is a view showing the structure of the bar array.
Fig. 3 is a schematic view of the internal overall structure of the laser.
FIG. 4 is a schematic view of an electrode connection;
FIG. 5 is a schematic view of the overall structure of a semiconductor laser for medical cosmetology according to the present invention;
in the figure: 1. the aluminum-copper composite electrode comprises a bar, 2, a tungsten-copper heat sink, 3, a water-passing heat sink, 4, an AlN ceramic plate, 5, electrode plates A,6, electrode plates B,7, electrode plates C,8, electrode binding posts, 9, electrode insulation sheets, 10, a water-passing channel, 11, a shell, 12, a rear baffle, 13, a fixing hole, 14, a welding surface, 15 and an electrode plate connecting groove.
Detailed Description
The present invention will be further described by way of examples, but not limited thereto, with reference to the accompanying drawings.
Example 1
As shown in fig. 1 to 4, the semiconductor laser for medical cosmetology comprises a water-passing heat sink 3, wherein the front surface of the water-passing heat sink 3 is a welding surface 14, an ALN ceramic chip 4 is arranged on the welding surface 14, and a bar array is arranged on the ALN ceramic chip 4.
The back of the water heat sink 3 is provided with a water through hole, the water through channel 10 is fixed on the water through hole on the back of the water heat sink 3 through a screw, and a silica gel sealing ring is arranged between the water through channel 10 and the water through hole to ensure that water leakage is avoided.
The upper surface of the water-passing heat sink 3 is provided with an electrode plate A5, the side surface of the water-passing heat sink 3 is provided with an electrode plate connecting groove 15, and an electrode plate B6 and an electrode plate C7 are arranged in the electrode plate connecting groove 15.
The electrode plate B6 is rectangular, the electrode plate C7 is L-shaped, the short edge of the electrode plate C7 is located in the electrode plate connecting groove 15, and the long edge of the electrode plate C7 is located on the back of the water-flowing heat sink 3. Electrode insulation sheets 9 are arranged between the electrode plates A5, B6, C7 and the water-through heat sink 3
The bar array comprises tungsten-copper heat sinks 2 arranged in parallel, and bars 1 are arranged between the adjacent tungsten-copper heat sinks 2.
The tungsten copper heat sink 2 is made of W90Cu, the length is 10mm, the thickness is 1.5mm, the thermal conductivity is 188W/(m × K), and the thermal expansion coefficient is 6.5ppm/K; the length of the bar 1 is matched with that of the tungsten copper heat sink 2, and the thermal expansion coefficients of the bar and the tungsten copper heat sink are kept consistent, so that the stress in the AuSn packaging process can be effectively released.
The packaging method of the semiconductor laser for medical cosmetology comprises the following steps:
(1) Welding the ALN ceramic plate to a water-flowing heat sink welding surface through AuSn welding flux;
(2) Welding the tungsten-copper heat sink and the bars together by using AuSn welding flux in a structure of the tungsten-copper heat sink, the bars and the tungsten-copper heat sink to obtain a bar array;
(3) Welding the bar array to the ALN ceramic chip through SnAg solder to realize indium-free packaging;
(4) And welding the electrode insulation sheet to the upper surface of the water-passing heat sink, the electrode sheet connecting groove on the side surface of the water-passing heat sink and the back surface of the water-passing heat sink by SnAg welding flux, and then continuously welding an electrode sheet A, an electrode sheet B and an electrode sheet C on the electrode insulation sheet by using the SnAg welding flux respectively to ensure that the electrode sheet A, the electrode sheet B and the electrode sheet C are in a serial state to finish packaging.
Example 2
The structure of a semiconductor laser for medical cosmetology is as in embodiment 1, except that the tungsten-copper heat sink has a length of 8mm and a thickness of 2mm.
Example 3
The semiconductor laser for medical treatment and cosmetology is structured as described in embodiment 1, except that the number of the water through ports 10 is 2, and the water through ports are respectively arranged at the top and the bottom of the back of the water through heat sink 3. The long edge of the electrode plate C7 is provided with 2L-shaped electrode terminals 8, the electrode terminals 8 are in compression joint with the electrode plate C7 through screws, and T-shaped insulating gaskets are arranged to ensure insulation between the electrode terminals 8 and the water-through heat sink 3. The electrode terminal 8 facilitates the electrical connection of the end user.
When the laser is used, the electrode is led out to an electrode post 8 on the back of the water heat sink 3 through the electrode slice A5, the electrode slice B6 and the electrode slice C7 which are connected in series, and then the laser can output high-power laser after being switched on through the electrode post 8.
Example 4
The structure of the semiconductor laser for medical cosmetology is as in embodiment 1, and the difference is that a water-through heat sink 3 is fixed on a shell 11 through a fixing hole 13 by screws, the used shell 11 is of an asymmetric structure, the water-through heat sink 3 fixed on the shell is ensured to be centered, after the water-through heat sink 3 is fixed, a rear baffle 12 is fixed on the back of the shell 11, the tightness is ensured, and the rear baffle 12 is provided with holes at corresponding positions of a water-through channel 10 and an electrode binding post 8 to ensure connection.
Claims (10)
1. The semiconductor laser for medical cosmetology is characterized by comprising a water-passing heat sink, wherein the front surface of the water-passing heat sink is a welding surface, an ALN ceramic chip is arranged on the welding surface, and a bar array is arranged on the ALN ceramic chip; a water through opening is formed in the back of the water through heat sink, and a water through channel is connected to the water through opening; the upper surface of the water-passing heat sink is provided with an electrode plate A, the side surface of the water-passing heat sink is provided with an electrode plate connecting groove, and an electrode plate B and an electrode plate C are arranged in the electrode plate connecting groove; electrode insulation sheets are arranged among the electrode plates A, B, C and the water-filled heat sink.
2. The medical cosmetic semiconductor laser as claimed in claim 1, wherein the bar array includes tungsten copper heat sinks arranged in parallel, and bars are arranged between adjacent tungsten copper heat sinks.
3. The semiconductor laser for medical cosmetology according to claim 2, wherein the tungsten-copper heat sink is made of W90Cu, has a length of 3 to 10mm and a thickness of 1 to 2mm; the number of the bars is more than 1, and the length of the bars is matched with that of the tungsten-copper heat sink.
4. The semiconductor laser for medical and cosmetic use according to claim 1, wherein heat dissipating serrations are provided inside the water passing heat sink.
5. The semiconductor laser for medical cosmetology according to claim 1, wherein the number of the water through ports is 2, and the water through ports are respectively positioned at the top and the bottom of the back surface of the water through heat sink.
6. The semiconductor laser for medical cosmetology according to claim 1, wherein the electrode sheet connecting grooves are raised grooves, and the electrode insulating sheet is made of ALN ceramic.
7. The semiconductor laser for medical and cosmetic use according to claim 1, wherein the electrode pad B is rectangular, the electrode pad C is L-shaped, the short side of the electrode pad C is located in the electrode pad connection groove, and the long side is located on the back of the water-passing heat sink.
8. The semiconductor laser for medical treatment and cosmetology as claimed in claim 7, wherein 2L-shaped electrode terminals are provided on the long side of the electrode chip C, the electrode terminals are pressed together with the electrode chip C by screws, and T-shaped insulating washers are provided.
9. The semiconductor laser for medical and cosmetic use according to claim 1, wherein the water-passing heat sink is enclosed and fixed by a housing and a back baffle plate which are of asymmetric structures;
further preferably, the side surface of the housing is further provided with a fixing hole.
10. A method for packaging a semiconductor laser device for medical cosmetology according to claim 7, comprising the steps of:
(1) Welding the ALN ceramic plate to a water-flowing heat sink welding surface through AuSn welding flux;
(2) Welding the tungsten-copper heat sink and the bars together by using AuSn welding flux in a structure of the tungsten-copper heat sink, the bars and the tungsten-copper heat sink to obtain a bar array;
(3) Welding the bar array to the ALN ceramic chip through SnAg solder to realize indium-free packaging;
(4) And welding the electrode insulation sheet to the upper surface of the water-passing heat sink, the electrode sheet connecting groove on the side surface of the water-passing heat sink and the back surface of the water-passing heat sink by SnAg welding flux, and then continuously welding an electrode sheet A, an electrode sheet B and an electrode sheet C on the electrode insulation sheet by using the SnAg welding flux respectively to ensure that the electrode sheet A, the electrode sheet B and the electrode sheet C are in a serial state to finish packaging.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110975251.1A CN115733048A (en) | 2021-08-24 | 2021-08-24 | Semiconductor laser for medical cosmetology and packaging method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110975251.1A CN115733048A (en) | 2021-08-24 | 2021-08-24 | Semiconductor laser for medical cosmetology and packaging method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115733048A true CN115733048A (en) | 2023-03-03 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110975251.1A Pending CN115733048A (en) | 2021-08-24 | 2021-08-24 | Semiconductor laser for medical cosmetology and packaging method thereof |
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| CN (1) | CN115733048A (en) |
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- 2021-08-24 CN CN202110975251.1A patent/CN115733048A/en active Pending
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