CN115714272A - Ultra-wideband reconfigurable frequency selection surface insensitive to large incident angle and polarization - Google Patents
Ultra-wideband reconfigurable frequency selection surface insensitive to large incident angle and polarization Download PDFInfo
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Abstract
The invention discloses an ultra-wideband reconfigurable frequency selection surface insensitive to large incident angle and polarization, which comprises a first dielectric slab, a second dielectric slab, a first conducting layer, a second conducting layer and a third conducting layer; the first dielectric plate is arranged above the second dielectric plate, the first conducting layer is arranged on the upper surface of the first dielectric plate, the second conducting layer is arranged between the first dielectric plate and the second dielectric plate, the third conducting layer is arranged on the lower surface of the second dielectric plate, the three metal sheets are consistent in shape and size, the surfaces of the conducting layers are of a central symmetrical distribution structure, and the first dielectric plate and the second dielectric plate are overlapped and correspond to each other. The first conducting layer comprises at least one structural unit, at least four diodes and two metal wires, the full polarization shielding and transmission of electromagnetic waves are realized by controlling the bias state of the diodes in the first conducting layer and combining the three-layer conducting layer structure, and the three-layer structure is wide in bandwidth and good in oblique incidence performance.
Description
Technical Field
The invention relates to the technical field of electromagnetic fields and microwaves, in particular to an ultra-wideband reconfigurable frequency selection surface with large incident angle and insensitive polarization.
Background
Over the last decade, researchers have generated great interest in Frequency Selective Surfaces (FSSs), since FSS structures have shown great advantages in electromagnetic shielding and reduced Radar Cross Section (RCS) performance. For a conventional passive FSS structure, when the geometric size of the structure is fixed, the transmission characteristic response of the structure is not substantially changed, and such a drawback causes a problem that the structure is limited when operating in some complicated application environments such as electromagnetic compatibility and military stealth. In order to solve the problem caused by the technical limitation, domestic researchers have begun to research a novel Active Frequency Selective Surface (AFSS) structure with reconfigurable transmission characteristic response. For example, under the working environment of the radome, when the structure is in a shielding state, the antenna can be protected from electromagnetic pulses in a strong band when in standby, and when the structure is reconstructed to a transmission state, the communication transmission performance of the structure can be ensured.
The reconfigurable AFSS structure has been widely applied to various fields so far, for example, the reconfigurable AFSS structure has the figure of reconfigurable AFSS in the aspects of compression imaging, electromagnetic pulse protection and ultra-wideband absorption, and plays a great role. The operating state of the resonant response of the switched-mode AFSS structure in these reconfigurable AFSS structures is closely related to the bias voltage of its PIN diode, while such techniques are equally applicable to reconfigurable absorbing/reflecting structures and transmission/shielding structures.
However, the existing AFSS structure technology adopts a method of linearly reconstructing a feed network, and such a technical method can only change the electrical performance of a frequency selective surface in a single polarization direction. Especially for the design insensitive to ultra-wideband and incidence angle, the traditional switch-mode AFSS structural design has the defect that most structures are narrow-band designs, so that only a few experimentally verified structures can work under the condition of full-polarization incidence. In order to solve the problems brought by the traditional AFSS structure feed technical method, the invention provides a novel ultra-wideband reconfigurable frequency selection surface insensitive to large incident angle and polarization.
Disclosure of Invention
In the background of the prior art, the conventional passive FSS structure has the defect that the transmission characteristic response of the structure is not substantially changed when the geometric dimension of the structure is fixed. The technical method of linearly reconstructing the feed network adopted by the existing AFSS structure has the technical defect that only the electrical performance of a frequency selection surface in a single polarization direction can be changed, and in addition, the technical limit of the design of most structures of the switch type AFSS structure for narrow-band design is added.
Based on the defects of the technical method, the invention provides the ultra-wideband reconfigurable frequency selection surface with large incident angle and insensitive polarization, can solve the problem that the electric performance in a single polarization direction can only be changed due to the linear reconfigurable feed method technology, and realizes the characteristics of insensitive incident angle and polarization.
In order to achieve the purpose, the invention provides an ultra-wideband reconfigurable frequency selection surface insensitive to large incident angle and polarization, which comprises a first dielectric plate, a second dielectric plate, a first conducting layer, a second conducting layer and a third conducting layer; the first dielectric plate is arranged above the second dielectric plate, the first conducting layer is arranged on the upper surface of the first dielectric plate, the second conducting layer is arranged between the first dielectric plate and the second dielectric plate, the third conducting layer is arranged on the lower surface of the second dielectric plate, the three metal sheets are consistent in shape and size, the surfaces of the conducting layers are of a central symmetrical distribution structure, and the first dielectric plate and the second dielectric plate are overlapped and correspond to each other.
In one embodiment, the first conductive layer comprises at least one structural unit, at least four diodes and two metal wires; the structural units are connected through diodes, and the two metal wires are respectively arranged at two ends of a diagonal line of the symmetrical center of the first conductive layer; the structure of each structural unit is the same, each structural unit comprises a metal sheet with a rectangular periphery and a centrosymmetric groove, the metal sheets are distributed in a centrosymmetric manner, the structural units are connected in a same-direction periodic seamless manner to form a metal sheet of a rectangular array of hollow grids on the first conducting layer, and 2N metal sheets form a frequency selection surface array; the metal sheets of the transversely adjacent structural units are connected through diodes to form transverse passages, the metal sheets of the longitudinally adjacent structural units are connected through diodes to form longitudinal passages, and bias voltage is applied to the longitudinal diodes through two metal wires.
In one embodiment, the third conductive layer includes metal sheets having a rectangular periphery and slots symmetrically centered in the periphery, the structural units are distributed symmetrically centered, and the structural units are periodically connected in the same direction without seams to form a rectangular array of metal sheets with spaces on the third conductive layer, and 2N metal sheets form a frequency selective surface array.
In one embodiment, in the first conducting layer, the connected metal sheet reflects the electromagnetic waves irradiated on the surface of the connected metal sheet, the discontinuous metal sheet transmits the electromagnetic waves irradiated on the surface of the disconnected metal sheet, and the full-polarization shielding and transmission of the electromagnetic waves are realized by controlling the bias state of the diode in the first conducting layer and combining the three-layer conducting layer structure;
when the metal wire applies reverse bias voltage to the two ends of the diode, the structure is in a closed working state, and when the metal wire applies forward bias voltage to the two ends of the switch diode, the structure is in an open working state.
In one embodiment, the metal sheet in the first conductive layer is a groove cross-shaped metal sheet, where s =2.4mm, the tip b =0.25mm, the arc e =0.39mm, and d =0.3mm;
eight metal discs are hollowed out on the groove cross-shaped metal sheet, and the radius of each metal disc is a =1mm.
In one embodiment, the second conductive layer comprises a plurality of cross-shaped metal sheets which are connected with each other, the cross-shaped metal sheets are connected with each other to form a space rectangular array, the cross-shaped metal sheets in the second conductive layer are aligned with the space rectangular arrays of the first conductive layer and the third conductive layer, and 2N metal sheets form a frequency selection surface array; a square is hollowed out in the center of the cross-shaped metal sheet.
In one embodiment, the side length f =4.2 of the square, and the width g =3.5mm of the cross-shaped metal sheet.
In one embodiment, the metal sheet in the third conductive layer is a cross-shaped recessed metal sheet; wherein j =2.14mm, the tip width n =0.25mm, the arc length k =0.39mm, q =0.96mm, m =2.89mm, eight metal disks are hollowed out of each recessed cross-shaped metal disk, and the radius l of each metal disk =1mm.
In one embodiment, the first dielectric plate has a thickness of 2mm, and the second dielectric plate has a thickness of 4mm.
In one embodiment, the relative dielectric constant of the first dielectric plate and the second dielectric plate is 3.
In one embodiment, diodes are arranged around the groove cross-shaped metal sheet to form a single-layer orthogonal feed network structure.
The invention has the beneficial effects that:
1. the invention provides a novel single-layer orthogonal feed network, and the reconfigurable performance of manual electromagnetic surface through and resistance mode one-key switching is obtained by combining PIN diodes.
2. The invention designs a multilayer coupling artificial electromagnetic surface structure by utilizing the multilayer filter principle, thereby improving the oblique incidence stability of the filter and realizing stable transmission and shielding response within the oblique incidence angle range of 0-60 degrees.
3. The invention designs an approximate complete centrosymmetric cellular structure and a feed network, and realizes the consistency of transmission characteristic response under different polarizations.
4. The invention is designed as a second-order filter with low ripple level and has characteristic response of high transmissivity. When forward bias voltage is applied to two ends of the switching diode, the structure is in an open working state, the FSS structure at the top layer of the design structure is in short connection, and the ultra-wideband shielding function in a 0-10 GHz frequency band is realized.
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In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic structural diagram of an embodiment of the present invention;
FIG. 2 is a schematic diagram of a first conductive layer structure according to an embodiment of the invention;
FIG. 3 is a schematic diagram of a second conductive layer structure according to an embodiment of the invention;
FIG. 4 is a schematic diagram of a third conductive layer structure according to an embodiment of the present invention;
FIG. 5 is a diagram of an equivalent circuit model according to the present invention;
FIG. 6 is a performance curve of the structure of the embodiment of the present invention at different polarization angles;
FIG. 7 is a graph of performance of an example structure of the present invention at oblique incidence;
fig. 8 is a diagram of an electric field distribution in a plane of the direction of propagation of an incident wave.
Detailed Description
To further illustrate the technical solutions and effects of the present invention adopted to achieve the predetermined objects, the following detailed description of the embodiments, structures, features and effects of the present invention will be made with reference to the accompanying drawings and examples.
The invention provides a novel ultra-wideband reconfigurable frequency selection surface with large incident angle and insensitive polarization, which is different from the traditional reconfigurable frequency selection surface structure and can provide insensitive characteristic response under different incident angles and polarizations. The proposed structure consists of a three-layer frequency selective surface structure, the working mode of which is controlled by the bias state of the PIN diode, and the structure is capable of functioning as a spatial filter or shielding structure which is completely dependent on the bias voltage variation of the structural PIN diode. On the basis of the novel structure, an Equivalent Circuit Model (Equivalent Circuit Model) is established for researching the incident angle and polarization insensitive characteristic response of the novel reconfigurable artificial electromagnetic surface. When a reverse bias voltage is applied to the PIN diode, the switch is in the off state, and the proposed structure acts as a second order filter with a low ripple level and has a high transmittance. In contrast, when a forward bias voltage is applied to the PIN diode, the PIN switching diode is caused to switch to an on state in which the frequency selective surface structure elements of the top layer are short-circuited, resulting in exhibiting an ultra-wideband shielding characteristic response in the frequency range of 0-10 GHz. Finally, the proposed structure was validated by ECM calculation, simulation analysis and experimental measurements.
Fig. 1 is a schematic structural diagram of an embodiment of the present invention, and as shown in fig. 1, the embodiment of the present invention discloses an ultra-wideband reconfigurable frequency selection surface with a large incident angle and insensitive to polarization, including a first dielectric slab, a second dielectric slab, a first conductive layer, a second conductive layer, and a third conductive layer; the first dielectric plate is arranged above the second dielectric plate, the first conducting layer is arranged on the upper surface of the first dielectric plate, the second conducting layer is arranged between the first dielectric plate and the second dielectric plate, the third conducting layer is arranged on the lower surface of the second dielectric plate, the three metal sheets are consistent in shape and size, the surfaces of the conducting layers are of a central symmetrical distribution structure, and the first dielectric plate and the second dielectric plate are overlapped and correspond to each other.
Fig. 2 is a schematic structural diagram of a first conductive layer according to an embodiment of the invention, as shown in fig. 2, the first conductive layer includes at least one structural unit, at least four diodes, and two metal lines; the structural units are connected through diodes, and the two metal wires are respectively arranged at two ends of a diagonal line of the symmetrical center of the first conductive layer; the structure of each structural unit is the same, each structural unit comprises a metal sheet with a rectangular periphery and a centrosymmetric groove, the metal sheets are distributed in a centrosymmetric manner, the structural units are connected in a same-direction periodic seamless manner to form a metal sheet of a rectangular array of hollow grids on the first conducting layer, and 2N metal sheets form a frequency selection surface array; the metal sheets of the transversely adjacent structural units are connected through diodes to form transverse passages, the metal sheets of the longitudinally adjacent structural units are connected through diodes to form longitudinal passages, and bias voltage is applied to the longitudinal diodes through two metal wires.
Diodes are arranged around the groove cross-shaped metal sheet to form a single-layer orthogonal feed network structure
In one embodiment, in the first conductive layer, the connected metal sheet reflects the electromagnetic waves irradiated on the surface of the connected metal sheet, the discontinuous metal sheet transmits the electromagnetic waves irradiated on the surface of the disconnected metal sheet, and the full-polarization shielding and transmission of the electromagnetic waves are realized by controlling the bias state of the diode in the first conductive layer and combining the three conductive layer structure. When a metal wire applies reverse bias voltage to the two ends of the diode, the structure is in a closed working state, and when forward bias voltage is applied to the two ends of the switch diode, the structure is in an open working state.
In one embodiment, the metal sheet in the first conductive layer is a recessed cross-shaped metal sheet, where s =2.4mm, the tip b =0.25mm, the arc e =0.39mm, and d =0.3mm. Eight metal discs are hollowed out on the groove cross-shaped metal sheet, and the radius of each metal disc is a =1mm.
Fig. 3 is a schematic structural diagram of a second conductive layer according to an embodiment of the present invention, as shown in fig. 3, the second conductive layer includes a plurality of cross-shaped metal sheets connected to each other, the cross-shaped metal sheets are connected to form a space rectangular array, the cross-shaped metal sheets in the second conductive layer are aligned with the space rectangular arrays of the first conductive layer and the third conductive layer, and 2N metal sheets form a frequency selective surface array; a square is hollowed in the center of the cross-shaped metal sheet.
In one embodiment, the side length f =4.2 of the square, and the width g =3.5mm of the cross-shaped metal sheet.
In one embodiment, the first dielectric plate has a thickness of 2mm and the second dielectric plate has a thickness of 4mm.
In one embodiment, the relative dielectric constant of the first dielectric plate and the second dielectric plate is 3.
Fig. 4 is a schematic structural diagram of a third conductive layer according to an embodiment of the present invention, as shown in fig. 4, the third conductive layer includes metal sheets having a rectangular periphery and a slot formed therein in a central symmetry manner, the structural units are distributed in a central symmetry manner, and the structural units are periodically connected in a seamless manner in the same direction to form a metal sheet of a rectangular array of empty spaces on the third conductive layer, and 2N metal sheets constitute a frequency selective surface array.
In one embodiment, the metal sheet in the third conductive layer is a recessed cross-shaped metal sheet; wherein j =2.14mm, the tip width n =0.25mm, the arc length k =0.39mm, q =0.96mm, m =2.89mm, eight metal disks are hollowed out of each recessed cross-shaped metal disk, and the radius l of each metal disk =1mm.
Fig. 5 is an equivalent circuit model diagram of the present invention, and as shown in fig. 5, the first conducting layer and the third conducting layer in the structure are equivalent to L1C1 and L4C4 branches in the circuit, respectively, and the second conducting layer structure is equivalent to an inductance branch L5 in the circuit. The first dielectric layer and the second dielectric layer in the structure are equivalent to L2C2 and L3C3 hybrid circuit branches in a circuit. In order to realize the reconfigurable full-polarization filtering/shielding performance response of one-key switching of the structure, a PIN switch diode is arranged in a first branch circuit, and the first branch circuit is connected with C1 in parallel. When the voltage applied to the diode is forward bias voltage, the structure is in an open state, the circuit can be regarded as LR series connection, and the circuit is inductive in an operating frequency band at the moment, so that electromagnetic shielding performance response can be realized. Conversely, when a reverse bias voltage is applied across the diode, the structure is in an off state and the circuit can be viewed as an LC series, where the circuit is capacitive within the operating band and has similar characteristics to a second order filter.
The PIN switch diode adopts a design method of mounting on the I layer of the structure along the-x axis and the-y axis, and the design method can realize that the structural symmetry and the polarization performance are hardly influenced by the feed network. When forward bias voltage is applied to two ends of the diode, the active frequency selection surface structure is in an opening state, and electromagnetic shielding performance response can be realized. When reverse bias voltage is applied to two ends of the diode, the active frequency selection surface structure is in a closed state, and second-order filtering performance response can be achieved.
Fig. 6 is a performance curve of the structure of the embodiment of the present invention under different polarization angles, which shows the performance of the design structure of the present invention under different polarizations, and the design method that the switching diode is loaded on the I layer along the-x axis and the-y axis results in that the structural symmetry is not destroyed by the feed network system. As shown, the structure can achieve bandpass and shielding performance response in the off and on states, respectively, over a polarization range of 0-90 °. From the results of the tests, the proposed new structure can work under full polarization, obtaining almost identical responses.
Fig. 7 is a performance curve of the structure of the embodiment of the present invention under oblique incidence, which shows the performance of the structure under different incidence angles, and the structure is subjected to a performance test based on TE incident waves. As shown, at 0-60 ° incidence, stable filtering and shielding performance response is achieved in both the off-state and the on-state. In the off state, no significant change in transmission performance response was observed over a range of less than 45 °, with ripple levels less than 3dB at 60 ° incidence. In the open state, the structure obtains better shielding performance response by oblique incidence.
Fig. 8 is an electric field distribution diagram on a plane of an incident wave propagation direction, and the reliability of the proposed novel structure design is verified by measuring the electric field distribution in the off state and the on state. As can be seen from fig. 8, in the lower and higher stop bands, the inventive structure exhibited no electromagnetic energy leakage, which indicates that the structure had a good shielding performance response. At the frequency point of 4.2 GHz, the structural working mode is switched to the closed state by applying reverse bias voltage to the PIN diode, so that the incident wave penetrates through the designed structure, the electric field intensity of the AFSS structure is similar before and after, and a transmission window is obtained under the condition of low incident loss. When the structure is switched to the on-state mode of operation, a shielding characteristic response is exhibited at the 4.2 GHz frequency point. In addition, it can be found from the figure that the maximum electric field strength within the stopband is twice that at the transmission window.
Claims (9)
1. The ultra-wideband reconfigurable frequency selection surface insensitive to large incident angle and polarization comprises a first dielectric slab, a second dielectric slab, a first conducting layer, a second conducting layer and a third conducting layer; the first dielectric plate is arranged above the second dielectric plate, a first conducting layer is arranged on the upper surface of the first dielectric plate, a second conducting layer is arranged between the first dielectric plate and the second dielectric plate, a third conducting layer is arranged on the lower surface of the second dielectric plate, the three metal sheets are consistent in shape and size, the surfaces of the conducting layers are in a central symmetrical distribution structure, and the first dielectric plate and the second dielectric plate are in up-and-down overlapped correspondence;
the first conducting layer comprises at least one structural unit, at least four diodes and two metal wires; the structural units are connected through diodes, and the two metal wires are respectively arranged at two ends of a diagonal line of the symmetrical center of the first conductive layer; the structure of each structural unit is the same, each structural unit comprises a metal sheet with a rectangular periphery and a centrally symmetrical groove formed in the interior, the structural units are centrally symmetrically distributed, the structural units are periodically connected in the same direction without seams to form a metal sheet of a rectangular array of hollow grids on the first conducting layer, and 2N metal sheets form a frequency selection surface array; the metal sheets of the transversely adjacent structure units are connected through diodes to form transverse passages, the metal sheets of the longitudinally adjacent structure units are connected through diodes to form longitudinal passages, and bias voltage is applied to the longitudinal diodes through two metal wires;
the third conducting layer comprises metal sheets, the periphery of each metal sheet is of a rectangular structure, the metal sheets are arranged in the metal sheets and are provided with slots which are centrosymmetrically, structural units are distributed in a centrosymmetric mode, the structural units are connected in a same-direction periodic seamless mode, metal sheets of a space rectangular array on the third conducting layer are formed, and 2N metal sheets form a frequency selection surface array.
2. The large-incidence-angle and polarization-insensitive ultra-wideband reconfigurable frequency selective surface as claimed in claim 1, wherein in the first conductive layer, the communicating metal sheet reflects the electromagnetic waves that irradiate the surface thereof, and the discontinuous metal sheet transmits the electromagnetic waves that irradiate the surface thereof, and by controlling the bias state of the diode in the first conductive layer, in combination with the three-layer conductive layer structure, full polarization shielding and transmission of the electromagnetic waves are achieved;
when a metal wire applies reverse bias voltage to the two ends of the diode, the structure is in a closed working state, and when forward bias voltage is applied to the two ends of the switch diode, the structure is in an open working state.
3. The large-incidence-angle and polarization-insensitive ultra-wideband reconfigurable frequency selective surface of claim 1, wherein the metal patches in the first conductive layer are recessed cross-shaped metal patches, where s =2.4mm, tip b =0.25mm, arc e =0.39mm, d =0.3mm;
eight metal discs are hollowed out on the groove cross-shaped metal sheet, and the radius of each metal disc is a =1mm.
4. The large-incidence-angle and polarization-insensitive ultra-wideband reconfigurable frequency selective surface of claim 1, wherein the second conductive layer comprises a plurality of interconnected cross-shaped metal sheets that are interconnected to form a rectangular array of spaces, the cross-shaped metal sheets in the second conductive layer are aligned with the rectangular array of spaces of the first conductive layer and the third conductive layer, and 2N metal sheets form the frequency selective surface array; a square is hollowed in the center of the cross-shaped metal sheet.
5. The large-incidence-angle and polarization-insensitive ultra-wideband reconfigurable frequency selective surface according to claim 4, wherein the square side length f =4.2 and the cross-shaped metal sheet width g =3.5mm.
6. The large-incidence-angle and polarization-insensitive ultra-wideband reconfigurable frequency selective surface of claim 1, wherein the metal sheets in the third conductive layer are recessed cross-shaped metal sheets; wherein j =2.14mm, the tip width n =0.25mm, the arc length k =0.39mm, q =0.96mm, m =2.89mm, eight metal disks are hollowed out of each recessed cross-shaped metal disk, and the radius l of each metal disk =1mm.
7. The large-incidence-angle and polarization-insensitive ultra-wideband reconfigurable frequency selective surface according to claim 1, wherein the first dielectric plate has a thickness of 2mm and the second dielectric plate has a thickness of 4mm.
8. The large incident angle and polarization insensitive ultra-wideband reconfigurable frequency selective surface of claim 1, wherein the first dielectric plate and the second dielectric plate have a relative dielectric constant of 3.
9. The ultra-wideband reconfigurable frequency selective surface according to claim 3, wherein diodes are arranged around the recessed cross-shaped metal sheet to form a single-layer orthogonal feed network structure.
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| CN116487896A (en) * | 2023-06-21 | 2023-07-25 | 南京信息工程大学 | Polarization independent control multimode switchable frequency selective filter |
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| CN114421152A (en) * | 2022-01-24 | 2022-04-29 | 西安电子科技大学杭州研究院 | Miniaturized reconfigurable frequency selection surface with high selection characteristic and application |
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