CN114421152A - Miniaturized reconfigurable frequency selection surface with high selection characteristic and application - Google Patents
Miniaturized reconfigurable frequency selection surface with high selection characteristic and application Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/002—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices being reconfigurable or tunable, e.g. using switches or diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/42—Housings not intimately mechanically associated with radiating elements, e.g. radome
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/42—Housings not intimately mechanically associated with radiating elements, e.g. radome
- H01Q1/422—Housings not intimately mechanically associated with radiating elements, e.g. radome comprising two or more layers of dielectric material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/0026—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices having a stacked geometry or having multiple layers
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Abstract
The invention discloses a miniaturized reconfigurable frequency selective surface with high selective characteristic and application thereof, comprising M multiplied by N two-dimensional resonance units which are periodically arranged, wherein each two-dimensional resonance unit comprises four layers of dielectric substrates and five layers of metal patches which are sequentially stacked from top to bottom; the active parallel plate capacitor structure unit is composed of a first layer of metal patch, a second layer of metal patch and a first layer of dielectric substrate; the fourth layer, the fifth layer metal patch and the fourth layer dielectric substrate form a passive parallel plate capacitor structure unit; the active parallel plate capacitor structure unit and the passive parallel plate capacitor structure unit are in cascade connection, so that the in-band flatness and the out-of-band edge steep drop of the pass band are realized, and high-frequency selection is realized. The invention solves the defects of larger unit size, insufficient out-of-band inhibition and single FSS performance fixing function; the antenna cover has the characteristics of high passband selectivity, wide stopband frequency band, miniaturization, low profile and convenience in processing of a direct current feed network, and can be applied to the design of an antenna cover in equipment with stealth performance requirements for communication and radar.
Description
Technical Field
The invention belongs to the technical field of microwaves, and particularly relates to a miniaturized reconfigurable frequency selection surface based on a high-selectivity pass band/wide stop band of an antenna housing, which can be applied to the design of the antenna housing in radar systems or communication systems on aircrafts, cruisers, missiles and the like.
Background
The Frequency Selective Surface (FSS) is an array structure formed by a large number of identical units arranged periodically in two dimensions, and is essentially a spatial filter capable of selecting frequencies of electromagnetic waves with different working frequencies, polarization states and incident angles. Due to the unique spatial filtering characteristic of FSS, the FSS is widely applied to electromagnetic stealth, radar wave-absorbing materials, electromagnetic shielding and other aspects.
Band-pass FSS is commonly used for radomes to achieve the purpose of reducing the Radar Cross Section (RCS) of an antenna system. The radar antenna is usually an important scattering source in a military system, the conventional dielectric radome cannot reduce the radar cross section, and the electromagnetic stealth can be realized by utilizing the wave-absorbing material, but the normal communication of the antenna system can be influenced. And when utilizing band-pass type FSS as the antenna house, the electromagnetic wave in the antenna communication frequency band can see through the antenna house and so do not influence normal communication, and the electromagnetic wave outside the communication frequency band then utilizes the low scattering appearance of antenna house itself to reflect the ripples to each direction, does not produce strong scattering in the incoming wave direction to reduce antenna system's outband single-station RCS, realized the stealthy function of radar.
However, the conventional passive FSS has the defect that the performance is fixed and cannot be changed, so that a Reconfigurable Frequency Selective Surface (RFSS) is produced. The reconfigurable frequency selection surface is characterized in that an adjustable device is introduced into a traditional frequency selection surface unit, and the spatial filtering characteristics of the FSS, such as the pass resistance state, the resonant frequency, the polarization state and the like, are changed by controlling external excitation. The RFSS effectively overcomes the defect that the performance of the passive FSS is fixed and cannot be changed, so that the frequency selection surface can adapt to the complex and changeable electromagnetic environment. Taking stealthy antenna house as an example, if enemy and my both sides radar antenna is in same operating frequency range, no matter my side radar is in operating condition, the electromagnetic wave in-band all can see through the antenna house, has great risk of being detected. When the RFSS is applied to the antenna housing, the working state can be switched according to the working condition of the internal antenna, when the antenna works, the RFSS is in a pass band state, the normal communication of the antenna is not influenced, the out-of-band RCS is reduced, and when the antenna does not work, the RFSS is switched into a stop band state, so that the broadband electromagnetic stealth is realized.
Miniaturization is an important direction for FSS development, and the size of an FSS unit is greatly reduced and is far smaller than the working wavelength mainly through the technologies of unit meandering and interdigital technology, 2.5D via hole loading technology, multi-unit cascade technology, parallel plate capacitance introduction and the like. Thereby improving the stability of the incidence angle of the FSS, increasing the number of elements in the application of limited large size to improve the transmission characteristic, and reducing the deterioration of the transmission characteristic caused by the distortion of the element shape in the conformal application.
High selectivity generally means that the filter response has a flatter passband, steeper sidebands and no higher order resonance in the wider frequency band out of band, and usually improves the passband flatness by introducing a plurality of transmission poles in the passband, and realizes the jitter cut-off and out-of-band suppression of the sidebands by introducing transmission zeros at the edges of the passband. At present, methods for realizing high-selectivity FSS mainly include introducing a resonant cavity (e.g., based on a substrate integrated waveguide, a ring resonator, etc.), a multilayer cascade structure (a cascade of resonant or non-resonant structures, introducing a coupling hole, etc.), a 3D structure, etc.
In recent years, many switch-type RFSS have been proposed, which implement a filter response switchable between pass band and stop band by loading a PIN diode. The research of the current switch-type RFSS mainly focuses on how to design better switchable characteristics of the pass band and the stop band (i.e. good stop band effect of another state in the pass band corresponding to the pass band), how to independently control the operation state and the polarization state, and how to simplify the bias network, and few articles further research the miniaturization characteristic, the out-of-band characteristic and the high selection characteristic of the pass band of the RFSS. Therefore, designing a good performance switching RFSS requires considering the following aspects:
1. miniaturization property: reducing the cell size by various methods allows more cells to be arranged in a limited large space, improves angular stability, and delays grating lobes.
2. Pass band characteristics: the RFSS has high selectivity corresponding to band-pass filtering when in a passband state, namely, the passband is flat, the sideband is steep, and high-order resonance does not occur in a broadband range outside the band.
3. Stop band characteristics: when the RFSS is in the stop band state, the RFSS has better electromagnetic shielding effect (not only for the pass band coverage band), namely | S21| < -20 dB.
4. Bias network availability: when the bias network is designed, the structural characteristics of the unit are combined, the bias network is simplified as much as possible, the influence on the RFSS characteristics is reduced, and the working state of each diode can be effectively changed when the bias voltage is changed.
Therefore, by studying the equivalent circuit and various implementation forms, the purpose is to study a method for improving the passband characteristics and the stopband shielding performance of the switch-type RFSS, and design an RFSS having the above excellent characteristics.
Due to the fact that the reconfigurable frequency selection surface has switchable filter response, the passband/stopband characteristics and the resonant frequency of the reconfigurable frequency selection surface can be conveniently changed by controlling the bias voltage, the reconfigurable frequency selection surface can better adapt to the increasingly complex electromagnetic environment nowadays, and the reconfigurable frequency selection surface becomes a research hotspot.
The university of western' S electronics and technology proposes a patent application (application No. 201810617349.8, application publication No. CN108615976A) entitled "radome-based dual-passband/wide-stopband reconfigurable frequency selective surface", which discloses a method for realizing the switching of the whole structure between dual-passband and stopband by the design of specific unit structures and the application of diodes, wherein the stopband realizes ultra-wideband, but the two passbands have different performances and a wider passband and poorer frequency selectivity, and meanwhile, when the working state is the stopband, most of the transmission coefficient S21(dB) is greater than-20 dB, and the irradiated electromagnetic waves cannot be reflected well, so that the electromagnetic reflection capability is not strong, and the capability of reducing RCS cannot be provided well.
European Jun et al, in a patent document "a band-pass type wide-stop-band reconfigurable frequency selection surface" (application No. 201810804997.4, application publication No. CN 108767487A) of the application, proposed a band-pass type wide-stop-band reconfigurable frequency selection surface which is more practical and controllable than a conventional band-pass type frequency selection surface, and the main innovation point is the design of a control circuit. However, when the working state is a passband, the transmission performance of the filter is greatly influenced by the incident angle of incident waves, and meanwhile, the direct current control circuit is complex in structure and inconvenient to actually process; when it operates at the stop band, it has a resonance point within the stop band, so that the isolation at the resonance point is relatively weak.
Disclosure of Invention
The invention aims to solve the defects in the prior art, make up the defects of a reconfigurable frequency selection surface in the aspects of large unit size, poor passband selection characteristics (flat passband, steep sideband, out-of-band rejection and the like), multi-band characteristics, stopband shielding characteristics and the like, and provide the frequency selection surface which has a passband/stopband switching function, high-selectivity bandpass and ultra-wideband reflection characteristics in two states, and simultaneously has a miniaturized low-profile characteristic and a reconfigurable characteristic.
The invention is realized by the following technical scheme.
The invention discloses a miniaturized reconfigurable frequency selective surface with high selective characteristic, which comprises M multiplied by N two-dimensional resonance units which are periodically arranged, wherein M is more than or equal to 3, N is more than or equal to 3, and each two-dimensional resonance unit comprises four layers of dielectric substrates and five layers of metal patches which are sequentially stacked from top to bottom;
the upper surfaces of the first, second and third layers of dielectric substrates are respectively printed with a first, second and third layer of metal patches, and the upper and lower surfaces of the fourth layer of dielectric substrate are respectively printed with a fourth and fifth layer of metal patches;
the first layer of metal patch and the second layer of metal patch are provided with square metal patches, short connecting wires and active parallel plate capacitor structure units formed by the diode switches and the first layer of dielectric substrate;
the fourth layer of metal patch and the fifth layer of metal patch are provided with square patches and a fourth layer of dielectric substrate to form a passive parallel plate capacitor structure unit;
the active parallel plate capacitor structure unit and the passive parallel plate capacitor structure unit are in cascade connection, so that the in-band flatness and the out-of-band edge steep drop of the pass band are realized, and high-frequency selection is realized.
Preferably, the first layer metal patch and the fifth layer metal patch are provided with four same square metal patches which are arranged at intervals, and short connecting lines are arranged between the square metal patches to connect the adjacent square metal patches with each other.
Preferably, a diode switch is respectively arranged at the middle points of the four sides of the first dielectric substrate, and one end of the diode switch is connected with the short connecting line, and the other end of the diode switch is connected with the adjacent unit.
Preferably, the short connection line is square and is positioned inside the diode switch at the midpoint of the four sides of the first dielectric substrate.
Preferably, the second layer of metal patches and the fourth layer of metal patches are provided with four same square metal patches, two square short connecting lines connected with the square metal patches are arranged on the outer sides of the square metal patches, and the square short connecting lines are connected with adjacent units.
Preferably, the square short connecting lines are positioned outside the square metal patches on two sides of the midpoint of the four sides of the second dielectric substrate and the fourth dielectric substrate.
Preferably, the third metal patch is a # -shaped metal grid patch.
Preferably, the thicknesses of the second layer dielectric substrate and the third layer dielectric substrate are the same, and the thickness of the first layer dielectric substrate is smaller than the thicknesses of the second layer dielectric substrate and the third layer dielectric substrate.
Preferably, the active parallel plate capacitor structure unit and the passive parallel plate capacitor structure unit realize the addition of transmission poles and transmission zeros, and the adjustment of the transmission poles in the pass band and the out-of-band transmission zeros is realized by changing the side lengths of the square metal patches of the first and second dielectric substrates and the square metal patches of the fourth and fifth dielectric substrates in the two structure units and the lengths of the short connecting lines of the first and second dielectric substrates and the short connecting lines of the fourth and fifth dielectric substrates.
Due to the adoption of the technical scheme, the invention has the following beneficial effects:
1. the active parallel plate capacitor structure unit formed by the square metal patch, the grid metal patch, the short connecting wire and the diode switch and the passive parallel plate capacitor structure unit formed by the square patch and the short connecting wire are cascaded by adopting a unit structure which is sequentially stacked from top to bottom, so that the flatness in a pass band and the steep drop of the outer edge of the pass band are realized, and the high-frequency selectivity is realized; meanwhile, through the optimized design of the unit structure, when the diode switch is conducted, induced current distribution is changed to destroy the resonance of the unit, high shielding and wide-band stop band characteristics are realized, and the technical problems that in the prior art, when the radar works, out-of-band interference suppression is insufficient and when the radar does not work, the external electromagnetic interference resistance of the full band in the wide band is insufficient are solved, so that the technical scheme of the reconfigurable frequency selection surface can meet high selectivity in the pass band or strong interference resistance in the wide band.
2. The technical scheme of the square metal patch and the grid metal patch is adopted, the miniaturization of the unit and the addition of out-of-band transmission zero point are realized by introducing a parallel plate capacitor structure, and the defects of large unit size and insufficient out-of-band suppression in the original similar design scheme are overcome. The design of the parallel plate capacitor structure introduces a transmission zero out of band, realizes high selectivity of a pass band and strong shielding property of a stop band, and overcomes the problem of weak anti-interference performance in the prior art. The equivalent capacitance value of the surface is increased at a longitudinal angle, the effect of large capacitance and small inductance is realized, the technical problem of large unit size of the active frequency selection surface in the prior art is solved, and the miniaturization of a unit structure is realized.
3. The switching of the frequency selection surface between the two working states of the selective band-pass and the wide stop band is realized by adding the switch type PIN tube, and the defect that the traditional FSS is single in performance fixing function is overcome. Finally, the unit structure is utilized, and an appropriate unit arrangement and direct current loading mode are adopted, so that an additional feed network layer is not needed, and the processing difficulty is simplified. The antenna cover has the characteristics of high passband selectivity, wide stopband frequency band, miniaturization, low profile and convenience in processing of a direct current feed network, and can be applied to antenna cover design in equipment with stealth performance requirements, such as communication, radar and the like.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the principles of the invention:
FIG. 1 is a schematic diagram of the structure of the unit of the present invention;
fig. 2 is a schematic structural diagram of an active resonant unit of a first metal patch layer according to the present invention;
fig. 3 is a schematic structural diagram of a passive resonance unit of a second metal patch layer according to the present invention;
fig. 4 is a schematic structural diagram of a passive resonance unit of a third metal patch layer according to the present invention;
fig. 5 is a schematic structural diagram of a passive resonance unit of a fourth metal patch layer according to the present invention;
fig. 6 is a schematic structural diagram of a passive resonance unit of a fifth metal patch layer according to the present invention;
FIGS. 7(a) and (b) are graphs of simulation results under irradiation at different incident angles according to the present invention;
FIGS. 8(a) and (b) are graphs showing simulation results under irradiation with different polarized waves according to the present invention.
In fig. 1: 1 is a first layer of metal patch; 2 is a second layer of metal patch; 3 is a third layer of metal patch; 4 is a fourth layer of metal patch; 5 is a fifth layer metal patch; 6 is a first layer dielectric substrate; 7 is a second layer dielectric substrate; 8 is a third layer of dielectric substrate; 9 is a fourth layer dielectric substrate;
in fig. 2: 1-1 is a first square metal patch; 1-2 is a first short connecting line; 1-3 are diode switches;
in fig. 3: 2-1 is a second square metal patch; 2-2 is a second short connecting line;
in fig. 4: 3-1 is a # -shaped metal grid patch;
in fig. 5: 4-1 is a fourth square metal patch; 4-2 is a fourth short connecting line;
in fig. 6: 5-1 is a fifth square metal patch; and 5-2 is a fifth short connecting line.
Detailed Description
The present invention will now be described in detail with reference to the drawings and specific embodiments, wherein the exemplary embodiments and descriptions of the present invention are provided to explain the present invention without limiting the invention thereto.
As shown in FIG. 1, the reconfigurable miniaturized frequency selective surface with high selectivity, high isolation and wide stop band comprises M × N two-dimensional resonance units which are periodically arranged, wherein M is more than or equal to 3, and N is more than or equal to 3. Each two-dimensional resonance unit comprises four layers of dielectric substrates and five layers of metal patches which are sequentially stacked from top to bottom.
A first layer of metal patches 1 are printed on the upper surface of the first layer of dielectric substrate 6; a second layer of metal patches 2 are printed on the upper surface of the second layer of dielectric substrate 7; a third layer of metal patches 3 are printed on the upper surface of the third layer of dielectric substrate 8; the upper surface and the lower surface of the fourth layer of dielectric substrate 9 are respectively printed with a fourth metal patch 4 and a fifth metal patch 5.
As shown in fig. 2, four identical first metal square patches 1-1 are printed on the upper surface of the first layer of metal patches 1 and are arranged at intervals; four square metal patches are uniformly printed on a square dielectric substrate in a2 x 2 matrix form, and two adjacent first metal square patches 1-1 are connected by a first short connecting line 1-2; the middle points of the four sides of the first medium substrate 6 are respectively provided with a diode switch 1-3, one end of each diode switch is connected with the first short connecting line 1-2, and the other end of each diode switch is connected with the adjacent unit. The first short connecting line 1-2 is square and is positioned at the inner side of the diode switch 1-3 at the midpoint of the four sides of the first dielectric substrate 6.
As shown in fig. 3, four identical second square metal patches 2-1 and eight second square short connection lines 2-2 are printed on the upper surface of the second dielectric substrate 7, the four square patches are uniformly arranged on the dielectric substrate in a2 × 2 matrix form, two square second short connection lines 2-2 connected to the four square metal patches 2-1 are arranged on the outer side of each second square metal patch 2-1, and the square second short connection lines 2-2 are located on the outer sides of the second square metal patches 2-1 on both sides of the midpoint of the four sides of the second dielectric substrate 7; and each square patch is connected with the square patches of the adjacent other units through two square short connecting lines.
The first metal patch 1, the second metal patch 2 and the first layer of dielectric substrate 6 form an active parallel plate capacitor structure unit; the four diode switches 1-3 are controlled to be on and off through direct current voltage, and reconfigurable functions are achieved.
In one embodiment, the first dielectric substrate 6 and the second dielectric substrate 7 have a square structure of F4B with a relative dielectric constant of 2.65, the side length P is 5mm, the first dielectric substrate thickness H1 is 0.13mm, and the second dielectric substrate thickness H2 is 2.3 mm. The metal patch comprises a first layer of metal patch 1 and a second layer of metal patch 2, wherein the side length A1 of the first square patch 1-1 and the side length A1 of the second square metal patch 2-1 are 2mm, the gap width W1 is 0.5mm, and the width Wp of the short connecting line 1-2 and the width Wp of the second square metal patch 2-2 are 0.5 mm.
The diode switch is BAR64-02V manufactured by Infineon company, the packaging form is SOD523, the equivalent capacitance is 0.17pF under zero bias, the resistance is 10k omega, and the impedance is 2.1 omega under conduction. The switching of the working state of the frequency selection surface is realized by controlling whether the diode is conducted or not. When the diode is in zero bias, the diode is approximately in an open circuit, and the frequency selection surface is in a band-pass state and shows a high-frequency selection characteristic; when the diode is conducted, the diode is similar to a good conductor, the original induced current distribution is changed, the original unit resonance state is damaged, and the frequency selection surface is in a wide stop band state and is expressed as high reflectivity and isolation in a wide frequency band.
As shown in fig. 4, the upper surface of the third dielectric substrate 8 is printed with a sensitive surface, which is a third layer metal patch 3, and the third layer metal patch 3 is a # -shaped metal grid patch 3-1.
In one embodiment, the grid line width W2 is 0.3mm and the grid spacing a2 is 2.2 mm. The third dielectric substrate 8 has a square F4B structure with a relative dielectric constant of 2.65, and has a side length P of 5mm and a thickness H2 of 2.3 mm.
The thicknesses of the second layer dielectric substrate 7 and the third layer dielectric substrate 8 are the same, and the thickness of the first layer dielectric substrate 6 is smaller than the thicknesses of the second layer dielectric substrate 7 and the third layer dielectric substrate 8.
As shown in fig. 5, a fourth layer of metal patches 4 is printed on the upper surface of the fourth layer of dielectric substrate 9, the fourth layer of metal patches 4 has the same structure as the second layer of metal patches 2, four identical fourth square metal patches 4-1 are provided, two square fourth short connecting lines 4-2 connected with the fourth square metal patches 4-1 are provided on the outer sides of the fourth square metal patches 4-1, and the square fourth short connecting lines 4-2 are connected with adjacent units.
As shown in fig. 6, a fifth metal patch 5 is printed on the lower surface of the fourth dielectric substrate 9, the fifth metal patch 5 has the same structure as the first metal patch 1, four identical fifth square metal patches 5-1 are arranged at intervals, and a fifth short connecting line 5-2 is arranged between the fifth square metal patches 5-1 to connect the adjacent fifth square metal patches 5-1 with each other.
In one embodiment, the length a3 of the fourth square metal patch 4-1 is 2.1mm, the width S3 is 0.4mm, and the width W3 of the fourth short connecting line 4-2 is 0.5 mm; the fifth square patch 5-1 has a side length a3 of 2.1mm, a slit width S3 of 0.4mm, and a fifth short connecting line 5-2 having a width W4 of 0.5 mm.
The fourth dielectric substrate 9 has a square F4B structure with a relative dielectric constant of 2.65, and has a side length P of 5mm and a thickness H1 of 0.13 mm.
The fourth metal patch layer 4, the fifth metal patch layer 5 and the fourth dielectric substrate 9 together form a passive resonance structural unit of the second parallel plate capacitor structure, and the control and adjustment of resonance frequency points are realized by adjusting the structural parameters of each metal patch.
The active parallel plate capacitor structure unit and the passive parallel plate capacitor structure unit are in cascade connection, so that the in-band flatness and the out-of-band edge steep drop of the pass band are realized, and high-frequency selection is realized. The active resonance unit of the first parallel plate capacitor structure and the passive resonance unit of the second parallel plate capacitor structure realize the addition of a transmission pole and a transmission zero, and the adjustment of the transmission pole in a pass band and the out-of-band transmission zero is realized by changing the side length (the same with the adjustment of the gap width) of the square patches 1-1 and 2-1 of the first and second layers of dielectric substrates and the square patches 4-1 and 5-1 of the fourth and fifth layers of dielectric substrates in the two metal patch structures and the lengths of the short connecting wires 1-2 and 2-2 of the first and second layers of dielectric substrates and the short connecting wires 4-2 and 5-2 of the fourth and fifth layers of dielectric substrates, so as to realize the optimal solution of transmission performance; the inductance surface is coupled with the magnetic field of incident electromagnetic waves, and the distance between transmission poles, namely the pass band width, is adjusted.
The technical effects of the invention are further explained by combining simulation experiments as follows:
1. simulation conditions and contents:
the transmission coefficients of the design under different angles of incident wave irradiation and the transmission coefficients under different angles of polarized wave irradiation are simulated and calculated by using commercial simulation software HFSS _19.0, and the results are shown in fig. 7(a), (b) and fig. 8(a), (b).
2. And (3) simulation result analysis:
referring to fig. 7(a) and (b), the simulation results of the S parameter of the RFSS based on the parallel plate capacitor structure in two states are shown in fig. 7(a) and (b), when the diode is in the OFF state, the filter response of the second-order bandpass is presented, the-3 dB passband is 2.18 to 2.81GHz, the relative bandwidth is 25%, the passband is flat, two transmission poles are arranged in the passband, the insertion loss is less than 0.5dB, and the cell size is 0.039 λ × 0.039 λ × 0.038 λ (λ is the wavelength corresponding to the first transmission pole of the passband). The transition band of | -S21 | -from-3 dB to-10 dB is only 190MHz, the high-order passband does not appear in the range of 3.31-22.58 GHz outside the band, the transmission coefficient is less than-20 dB, the relative bandwidth is 149%, and the high-order passband flatness, the sideband steepness and the out-of-band rejection are realized in the OFF state, wherein the transmission zero resonant frequency introduced by the series parallel plate capacitor resonator is 9.06GHz outside the band;
when the diode is in an ON state, a good shielding effect is presented, and the absolute value of S21 is smaller than-20 dB in the range of 0-22.9 GHz. The higher order resonance of the two states after 22GHz is generated for the middle inductor layer and the cross-shaped aperture in the parallel plate capacitor structure. It can be seen that RFSS based ON the parallel plate capacitor structure has significantly improved miniaturization characteristics, pass band characteristics in the OFF state, and stop band shielding characteristics in the ON state, compared to the cell structures of the previous sections.
Next, the filter response of RFSS based on the parallel plate capacitor structure at oblique incidence under two polarizations is studied, as shown in fig. 8(a), the transmission coefficient curves at oblique incidence of TE and TM polarizations in the OFF state are shown, and since the cell structure has symmetry, the transmission curves of TE and TM polarizations at normal incidence match, and thus, the polarization stability is good. Within the incident angle of 45 degrees, the passband is sunken when TE polarized waves are incident, the TM polarized passband is shifted to high frequency, the stability of the incident angle is good overall, and high-order resonance does not occur within 20GHz outside the band. The transmission coefficient at oblique incidence in the ON state is shown in FIG. 7(b), the stop band characteristic is not affected at oblique incidence, and the transmission coefficients are all less than-20 dB within the range of 0-20 GHz. The final designed RFSS therefore has good incident angle and polarization stability for both states.
The above description is only an example of the present invention and does not constitute any limitation to the present invention, and it is obvious to those skilled in the art that various modifications and changes in form and detail may be made without departing from the principle of the present invention after understanding the content and principle of the present invention, but those modifications and changes based on the idea of the present invention are still within the scope of the claims of the present invention.
Claims (10)
1. A miniaturized reconfigurable frequency selective surface with high selective characteristics comprises M multiplied by N two-dimensional resonance units which are periodically arranged, wherein M is more than or equal to 3, and N is more than or equal to 3, and the miniaturized reconfigurable frequency selective surface is characterized in that each two-dimensional resonance unit comprises four layers of dielectric substrates and five layers of metal patches which are sequentially stacked from top to bottom;
the upper surfaces of the first, second and third layers of dielectric substrates (6), (7) and (8) are respectively printed with a first, second and third layers of metal patches (1), (2) and (3), and the upper and lower surfaces of the fourth layer of dielectric substrate (9) are respectively printed with a fourth and fifth layers of metal patches (4) and (5);
the first layer of metal patch (1) and the second layer of metal patch (2) are provided with square metal patches, short connecting wires and active parallel plate capacitor structure units formed by diode switches and the first layer of dielectric substrate (6);
the fourth layer of metal patch (4) and the fifth layer of metal patch (5) are provided with square patches and a fourth layer of dielectric substrate (9) to form a passive parallel plate capacitor structure unit;
the active parallel plate capacitor structure unit and the passive parallel plate capacitor structure unit are in cascade connection, so that the in-band flatness and the out-of-band edge steep drop of the pass band are realized, and high-frequency selection is realized.
2. Miniaturized reconfigurable frequency selective surface with highly selective properties according to claim 1, characterized in that the first layer of metal patches (1) and the fifth layer of metal patches (5) are provided with four identical square metal patches arranged at intervals, and short connecting lines are provided between the square metal patches to connect adjacent square metal patches to each other.
3. A miniaturized reconfigurable frequency selective surface with high selectivity characteristics according to claim 2, characterized in that a diode switch (1-3) is disposed at the midpoint of each of the four sides of the first-layer dielectric substrate (6), and one end of the diode switch (1-3) is connected to the first short connection line (1-2) and the other end is connected to the adjacent cell.
4. A miniaturized reconfigurable frequency selective surface with highly selective properties according to claim 2, characterized in that the short connection lines are square and are located inside the diode switches (1-3) at the midpoints of the four sides of the first dielectric substrate (6).
5. The miniaturized reconfigurable frequency selective surface with high selectivity characteristics according to claim 1, characterized in that the second layer of metal patches (2) and the fourth layer of metal patches (4) are provided with four identical square metal patches, and two square short connecting lines connected with the same square metal patches are arranged on the outer side of each square metal patch, and the square short connecting lines are connected with adjacent cells.
6. The miniaturized reconfigurable frequency selective surface with high selectivity characteristics according to claim 5, wherein the square short connecting wires are positioned outside the square metal patches at two sides of the midpoints of the four sides of the second and fourth dielectric substrates (7) and (9).
7. Miniaturized reconfigurable frequency-selective surface according to claim 1, characterized in that the third layer of metal patches (3) is a # -shaped metal grid patch (3-1).
8. The miniaturized reconfigurable frequency selective surface with high selectivity characteristics according to claim 1, wherein the thicknesses of the second layer dielectric substrate (7) and the third layer dielectric substrate (8) are the same, and the thickness of the first layer dielectric substrate (6) is smaller than the thicknesses of the second layer dielectric substrate (7) and the third layer dielectric substrate (8).
9. The miniaturized reconfigurable frequency selective surface with high selectivity characteristics according to claim 1, wherein the active parallel plate capacitor structure unit and the passive parallel plate capacitor structure unit realize the addition of transmission poles and transmission zeros, and the adjustment of the transmission poles in the pass band and the out-of-band transmission zeros is realized by changing the side lengths of the square metal patches of the first and second dielectric substrates and the square metal patches of the fourth and fifth dielectric substrates in the two structure units and the lengths of the short connecting lines of the first and second dielectric substrates and the short connecting lines of the fourth and fifth dielectric substrates.
10. Use of a miniaturized reconfigurable frequency selective surface with high selectivity characteristics according to any of claims 1 to 9 in radomes in equipment with stealth properties for communication, radar.
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| CN116130970A (en) * | 2022-12-12 | 2023-05-16 | 南京信息工程大学 | Novel frequency selective surface with independent control working mode |
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| CN115714272B (en) * | 2022-12-12 | 2024-04-26 | 南京信息工程大学 | Ultra wideband reconfigurable frequency selective surface with large incident angle and polarization insensitivity |
| CN115986342A (en) * | 2023-03-16 | 2023-04-18 | 中国科学院长春光学精密机械与物理研究所 | Polyaniline-based radar switch device and preparation method thereof |
| CN115986342B (en) * | 2023-03-16 | 2023-07-04 | 中国科学院长春光学精密机械与物理研究所 | Polyaniline-based radar switching device and preparation method thereof |
| CN116845583A (en) * | 2023-08-11 | 2023-10-03 | 成都辰星迅联科技有限公司 | Millimeter wave ultra-large frequency ratio wide bandwidth angular frequency selection surface |
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