CN115714272B - Ultra wideband reconfigurable frequency selective surface with large incident angle and polarization insensitivity - Google Patents
Ultra wideband reconfigurable frequency selective surface with large incident angle and polarization insensitivity Download PDFInfo
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Abstract
The invention discloses an ultra-wideband reconfigurable frequency selective surface insensitive to large incidence angle and polarization, which comprises a first dielectric plate, a second dielectric plate, a first conductive layer, a second conductive layer and a third conductive layer; the first dielectric plate is arranged above the second dielectric plate, the first conductive layer is arranged on the upper surface of the first dielectric plate, the second conductive layer is arranged between the first dielectric plate and the second dielectric plate, the third conductive layer is arranged on the lower surface of the second dielectric plate, the shapes and the sizes of the three layers of metal sheets are consistent, the surfaces of the conductive layers are in a central symmetrical distribution structure, and the positions of the first dielectric plate and the positions of the second dielectric plate are overlapped up and down correspondingly. The first conducting layer comprises at least one structural unit, at least four diodes and two metal wires, and the full polarization shielding and transmission of electromagnetic waves are realized by controlling the bias state of the diodes in the first conducting layer and combining with the structure setting of the three layers of conducting layers, and the bandwidth of the three layers of structures is wide and the oblique incidence performance is good.
Description
Technical Field
The invention relates to the technical field of electromagnetic fields and microwaves, in particular to an ultra-wideband reconfigurable frequency selective surface insensitive to large incidence angles and polarization.
Background
For the last decade, researchers have generated great interest in frequency selective surfaces (Frequency Selective Surfaces, FSSs) because FSS structures have shown great advantages in terms of electromagnetic shielding and reduced radar cross section (Radar Cross Section, RCS) performance. For conventional passive FSS structures, the transmission characteristic response of the structure is substantially unchanged when the geometry of the structure is fixed, which may present a problem when the structure is limited to complex application environments such as certain electromagnetic compatibility and military stealth. In order to solve the problem caused by the technical limitation, domestic researchers have been beginning to research a novel active frequency selective surface (Active Frequency Selective Surfaces, AFSSs) structure with a reconfigurable transmission characteristic response, and compared with the traditional structure, the novel active frequency selective surface structure can better play a role in the structure under the limited working environment of the traditional FSS structure, so that the defect of the traditional FSS structure is greatly overcome, and the AFSS structure is outstanding in a plurality of structures due to the reconfigurable characteristic. For example, in the working environment of the radome, when the structure is in a shielding state, the antenna can be protected from electromagnetic pulses in a strong band during standby, and when the structure is reconfigured to a transmission state, the communication transmission performance of the structure can be ensured.
Up to now, the reconfigurable AFSS structure has been widely used in various fields, such as compression imaging, electromagnetic pulse protection and broadband absorption, and has a great effect on the figure of the reconfigurable AFSS. The operating state of the resonant response of the switching mode AFSS structure in these reconfigurable AFSS structures is closely related to the bias voltage of its PIN diode, while at the same time such a technique is equally applicable in reconfigurable absorbing/reflecting structures and transmitting/shielding structures.
However, the existing AFSS structure technology adopts a method of linearly reconstructing a feed network, and such a technical method can only change the electrical performance of the frequency selective surface in a single polarization direction. In particular, in the design insensitive to broadband and incident angles, the conventional switch-mode AFSS structure design has the defect that most of the structures are designed in a narrow band mode, so that only a few structures subjected to experimental verification can work under the condition of full polarization incidence. In order to solve the problems brought by the traditional AFSS structure feed technology method, the invention provides a novel ultra-wideband reconfigurable frequency selective surface with a large incident angle and insensitive polarization.
Disclosure of Invention
In the prior art context, conventional passive FSS structures have the disadvantage that the transmission characteristic response of the structure is not substantially changed when the geometry of the structure is fixed. The existing technical method of the linear reconstruction feed network adopted by the AFSS structure has the technical defect that the electric performance of the frequency selective surface in a single polarization direction can only be changed, and the technical limitation brought by the narrow-band design of most of the switch-type AFSS structure designs is added.
Based on the defects of the technical method, the design of the invention provides an ultra-wideband reconfigurable frequency selective surface with a large incidence angle and insensitive polarization, which can solve the problem that the linear reconfiguration feeding method technology can only change the electrical performance in a single polarization direction, and realize the characteristics of insensitive incidence angle and polarization.
In order to achieve the above object, the present invention provides an ultra wideband reconfigurable frequency selective surface insensitive to polarization and large in incident angle, comprising a first dielectric plate, a second dielectric plate, a first conductive layer, a second conductive layer, and a third conductive layer; the first dielectric plate is arranged above the second dielectric plate, a first conductive layer is arranged on the upper surface of the first dielectric plate, a second conductive layer is arranged between the first dielectric plate and the second dielectric plate, a third conductive layer is arranged on the lower surface of the second dielectric plate, the shapes and the sizes of rectangular outlines formed on the outermost sides of the three conductive layers are consistent, the surfaces of the conductive layers are in a central symmetrical distribution structure, and the positions of the first dielectric plate and the positions of the second dielectric plate are overlapped up and down correspondingly.
In one embodiment, the first conductive layer includes cross-shaped metal sheets, diodes and metal wires, in each cross-shaped metal sheet, four parallel sides at the farthest end from the center of the cross-shaped metal sheet are connecting sides, and the connecting sides of each cross-shaped metal sheet are aligned with and then connected with the connecting sides of the rest cross-shaped metal sheets; two adjacent connecting edges of the two cross-shaped metal sheets are connected through a diode to form a passage; the two metal wires are respectively arranged at two ends of a diagonal line passing through the symmetrical center of the first conductive layer, the metal wires are connected and arranged on the centers of connecting edges, which are not connected with the rest cross-shaped metal sheets, of the cross-shaped metal sheets, the two metal wires are symmetrical relative to the center of the first conductive layer, and the two metal wires are used for applying bias voltage to the diode; in the four cross-shaped metal sheets forming the second-order square matrix, two mutually parallel connecting edges in each cross-shaped metal sheet are respectively connected
The middle point is taken and connected into line segments, the line segments are bisectors of cross-shaped metal sheets, and each cross-shaped metal sheet comprises two flat strips
Branching lines, namely extending, connecting and combining bisectors of each cross-shaped metal sheet to form four bisectors which are parallel to each other
The two bisector extension lines which are intersected are mutually perpendicular, and the four bisector extension lines are connected to form a square sealing area
The domain is a structural unit; the first conductive layer comprises n times n structural units, wherein n is more than or equal to 2, n is a positive integer, and the structures of the structural units are identical to each other to form the frequency selective surface array.
In one embodiment, the third conductive layer includes a plurality of cross metal sheets, the arrangement mode of the cross metal sheets in the third conductive layer is the same as that of the cross metal sheets in the first conductive layer, a cross metal sheet is correspondingly arranged on the vertical direction of the surface of each cross metal sheet, the logic of the third conductive layer forming the structural unit is consistent with that of the first conductive layer, and each structural unit in the third conductive layer is correspondingly provided with a structural unit in the first conductive layer in an overlapping manner along the vertical direction of the surface.
In one embodiment, in the first conductive layer, the communicating metal sheet reflects electromagnetic waves irradiating the surface of the first conductive layer, the intermittent metal sheet transmits the electromagnetic waves irradiating the surface of the first conductive layer, and the full polarization shielding and transmission of the electromagnetic waves are realized by controlling the bias state of the diode in the first conductive layer and combining with the structure arrangement of the three conductive layers; when reverse bias voltage is applied to two ends of the diode by the metal wire, the structure is in an off working state, and when forward bias voltage is applied to two ends of the switch diode, the structure is in an on working state.
In one embodiment, the cross-shaped metal sheet in the first conductive layer is a groove cross-shaped metal sheet, the connecting edges of the groove cross-shaped metal sheet are straight line segments parallel to each other, and the arc-shaped groove on each diagonal corner of the groove cross-shaped metal sheet points to the symmetrical center position of the structural unit; wherein s is the linear distance between the arc top angles and the bottom angles of the grooves, the top angles are the angles formed by converging the upper ends of the arc grooves on the four opposite angles of the structural unit, the bottom angles are the angles formed by converging the lower ends of the arc grooves on the four opposite angles of the cross-shaped metal sheet and the rectangle, b is the broadband distance of the top angles of the grooves, the broadband distance of the top angles of the grooves is the distance between the upper ends of the adjacent arc grooves on the four opposite angles of the cross-shaped metal sheet, e is the arc length of the arc top angles of the grooves, the arc length of the top angles is the arc circumference length of the arc upper ends of the arc grooves on the four opposite angles of the cross-shaped metal sheet from the lower ends, d is the width of the protruding rectangle of the edges of the grooves, the width of the protruding rectangle of the edges of the grooves is the linear distance between the lower ends of the arc grooves on the four opposite angles of the unit structure and the protruding rectangle, s=2.4mm, b=0.25mm, e=0.39 mm, and d=0.3 mm; eight metal discs are hollowed out on the cross-shaped metal sheet of the groove, and the radius of each metal disc is a=1 mm.
In one embodiment, the second conductive layer includes a plurality of cross-shaped metal sheets connected to each other, the structural units of the second conductive layer are cross-shaped metal sheets, n times n cross-shaped metal sheets form a frequency selective surface array, and the cross-shaped metal sheets in the second conductive layer are aligned with the structural units of the first conductive layer and the third conductive layer.
In one embodiment, the width g=3.5 mm of the cross-shaped metal sheet.
In one embodiment, the cross-shaped metal sheet in the third conductive layer is a groove cross-shaped metal sheet; wherein j is the linear distance between the arc top angles and the bottom angles of the grooves, the top angles are the angles formed by converging the upper ends of the arc grooves on the four diagonal angles of the cross-shaped metal sheet, the bottom angles are the angles formed by converging the lower ends of the arc grooves and the rectangles on the four diagonal angles of the structural unit, n is the broadband distance between the upper ends of the adjacent arc grooves on the four diagonal angles of the cross-shaped metal sheet, j=2.14 mm, n=0.25 mm, k is the arc length of the arc top angles of the grooves, the arc length of the top angles is the arc circumference length of the upper ends of the arc grooves on the four diagonal angles of the unit structure, q is the width of the protruding rectangles of the edges of the grooves, m is the chamfer length between the protruding rectangular edges of the grooves and the arc top angles of the grooves, k=0.39 mm, q=0.96 mm, m=2.89 mm, eight metal wafers are hollowed out on each cross-shaped metal wafer, and the radius l=1 mm.
In one embodiment, the thickness of the first dielectric plate is 2mm, and the thickness of the second dielectric plate is 4mm.
In one embodiment, the relative dielectric constant of the first dielectric plate and the second dielectric plate is 3.
In one embodiment, diodes are arranged around the groove cross-shaped metal sheet to form a single-layer orthogonal feed network structure.
The invention has the beneficial effects that:
1. the design of the invention provides a novel single-layer orthogonal feed network, and the reconfigurable performance of manual electromagnetic surface on-off mode one-key switching is obtained by combining a PIN diode.
2. The design of the invention utilizes the principle of a multilayer filter to design a multilayer coupling artificial electromagnetic surface structure, thereby improving the oblique incidence stability of the filter and realizing stable transmission and shielding response within the range of 0-60 degrees of oblique incidence angle.
3. The invention designs a cell structure and a feed network which are approximately completely centrosymmetric, and realizes the consistency of transmission characteristic response under different polarizations.
4. The invention is designed as a second order filter with low ripple level and has high transmittance characteristic response. When forward bias voltage is applied to two ends of the switch diode, the structure is in an on working state, and the FSS structure on the top layer of the design structure is connected in a short way, so that an ultra-wideband shielding function in a frequency band of 0-10 GHz is realized.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of an embodiment of the present invention;
FIG. 2 is a schematic diagram of a first conductive layer according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a second conductive layer according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a third conductive layer according to an embodiment of the present invention;
FIG. 5 is a diagram of an equivalent circuit model of the present invention;
FIG. 6 is a graph showing the performance of an embodiment of the present invention at different polarization angles;
FIG. 7 is a graph showing the performance of an embodiment of the present invention under oblique incidence;
Fig. 8 is an electric field distribution diagram in the plane of the propagation direction of an incident wave.
Detailed Description
In order to further describe the technical scheme and efficacy adopted by the invention to achieve the preset aim, the following detailed description of the specific implementation, structure, characteristics and efficacy of the invention is given below with reference to the accompanying drawings and examples.
The invention provides a novel ultra-wideband reconfigurable frequency selective surface insensitive to large incidence angle and polarization, which is different from the conventional reconfigurable frequency selective surface structure, and can provide insensitive characteristic response under different incidence angles and polarizations. The proposed structure consists of a three-layer frequency selective surface structure, the operation mode of which is controlled by the bias state of the PIN diode, the structure can function as a spatial filter or shielding structure, which is completely dependent on the bias voltage variation of the PIN diode of the structure. On the basis of providing a novel structure, an equivalent circuit model (Equivalent Circuit Model) is established for researching the incident angle and polarization insensitivity characteristic response of the novel reconfigurable artificial electromagnetic surface. When a reverse bias voltage is applied to the PIN diode, the switch is in an off state, and the proposed structure acts as a second order filter of low ripple level, having high transmittance. Conversely, when a forward bias voltage is applied to the PIN diode, the PIN switching diode is caused to switch to an on state in which the top-level frequency selective surface structural element is short-circuited, resulting in an ultra-wideband shielding characteristic response in the frequency range of 0-10 GHz. Finally, the proposed structure is validated by ECM calculation, simulation analysis and experimental measurements.
FIG. 1 is a schematic diagram of an embodiment of the present invention, as shown in FIG. 1, the embodiment of the present invention discloses an ultra wideband reconfigurable frequency selective surface with a large incident angle and insensitive polarization, which comprises a first dielectric plate, a second dielectric plate, a first conductive layer, a second conductive layer, and a third conductive layer; the first dielectric plate is arranged above the second dielectric plate, the first conductive layer is arranged on the upper surface of the first dielectric plate, the second conductive layer is arranged between the first dielectric plate and the second dielectric plate, the third conductive layer is arranged on the lower surface of the second dielectric plate, the shapes and the sizes of the three layers of metal sheets are consistent, the surfaces of the conductive layers are in a central symmetrical distribution structure, and the positions of the first dielectric plate and the positions of the second dielectric plate are overlapped up and down correspondingly.
Fig. 2 is a schematic structural diagram of a first conductive layer according to an embodiment of the present invention, where, as shown in fig. 2, the first conductive layer includes at least one structural unit, at least four diodes, and two metal lines; each structural unit is connected through a diode, and two metal wires are respectively arranged at two ends of a diagonal line passing through the symmetry center of the first conductive layer; the structure of each structural unit is the same as each other, each structural unit respectively comprises metal sheets with rectangular peripheries and centrally symmetrical slots arranged in the structural units, the structural units are centrally symmetrically distributed and are connected in a same-direction periodically and seamlessly to form a metal sheet with a rectangular array of spaces on a first conductive layer, and 2N metal sheets form a frequency selective surface array; each transverse passage is formed between every two adjacent transverse structural unit metal sheets through diode connection, each longitudinal passage is formed between every two adjacent longitudinal structural unit metal sheets through diode connection, and bias voltage is applied to the longitudinal diodes through two metal wires.
Diodes are arranged around the groove cross-shaped metal sheet to form a single-layer orthogonal feed network structure
In one embodiment, in the first conductive layer, the communicating metal sheet reflects electromagnetic waves irradiating the surface of the communicating metal sheet, the intermittent metal sheet transmits the electromagnetic waves irradiating the surface of the communicating metal sheet, and the full polarization shielding and transmission of the electromagnetic waves are realized by controlling the bias state of the diode in the first conductive layer and combining with the structure arrangement of the three conductive layers. When reverse bias voltage is applied to two ends of the diode by the metal wire, the structure is in an off working state, and when forward bias voltage is applied to two ends of the switch diode, the structure is in an on working state.
In one embodiment, the metal sheet in the first conductive layer is a fluted cross-shaped metal sheet, where s=2.4 mm, tip b=0.25 mm, arc e=0.39 mm, d=0.3 mm. Eight metal discs are hollowed out on the cross-shaped metal sheet of the groove, and the radius of each metal disc is a=1 mm.
FIG. 3 is a schematic diagram of a second conductive layer structure according to an embodiment of the present invention, as shown in FIG. 3, where the second conductive layer includes a plurality of cross-shaped metal sheets connected to each other to form a rectangular array of spaces, the cross-shaped metal sheets in the second conductive layer are aligned with the rectangular array of spaces of the first conductive layer and the third conductive layer, and 2N metal sheets form a frequency selective surface array; the square is hollowed out in the center of the cross-shaped metal sheet.
In one embodiment, the side length f=4.2 of the square, and the width g=3.5 mm of the cross-shaped metal sheet.
In one embodiment, the thickness of the first dielectric plate is 2mm, and the thickness of the second dielectric plate is 4mm.
In one embodiment, the relative dielectric constant of the first dielectric plate and the second dielectric plate is 3.
Fig. 4 is a schematic structural diagram of a third conductive layer according to an embodiment of the present invention, where, as shown in fig. 4, the third conductive layer includes metal sheets with rectangular outer peripheries and slots arranged in a central symmetry manner, the structural units are distributed in a central symmetry manner, and the structural units are connected periodically and seamlessly in the same direction to form a rectangular array of space on the third conductive layer, and 2N metal sheets form a frequency selective surface array.
In one embodiment, the metal sheet in the third conductive layer is a notched cross metal sheet; wherein j=2.14 mm, the tip width n=0.25 mm, the arc length is k=0.39 mm, q=0.96 mm, m=2.89 mm, eight metal discs are hollowed out on each groove cross-shaped metal sheet, and the radius l of each metal disc is=1 mm.
Fig. 5 is a schematic diagram of an equivalent circuit of the present invention, as shown in fig. 5, the first conductive layer and the third conductive layer in the structure are respectively equivalent to the L1C1 and L4C4 branches in the circuit, and the second conductive layer is equivalent to the inductance branch L5 in the circuit. The first dielectric layer and the second dielectric layer in the structure are equivalent to an L2C2 and L3C3 mixed circuit branch in the circuit. In order to realize the reconfigurable full polarization filtering/shielding performance response of the structure one-key switching, the invention installs a PIN switching diode on a first branch, and the first branch is connected with C1 in parallel. When the voltage applied to the diode is forward bias voltage, the structure is in an on state, the circuit can be regarded as LR series connection, the circuit can be seen to be inductive in the working frequency band, and electromagnetic shielding performance response can be realized. In contrast, when a reverse bias voltage is applied across the diode, the structure is in an off state, and the circuit can be considered as an LC series, where the circuit is capacitive in the operating band, with characteristics similar to a second order filter.
The PIN switching diode adopts a design method which is arranged on the I layer of the structure along the-x axis and the-y axis, and the structural symmetry and the polarization performance can be hardly influenced by a feed network by adopting the design method. When a forward bias voltage is applied across the diode, the active frequency selective surface structure is in an on state, enabling electromagnetic shielding performance response. When a reverse bias voltage is applied across the diode, the active frequency selective surface structure is in an off state, and a second order filter performance response can be achieved.
Fig. 6 is a graph showing the performance of the structure of the embodiment of the present invention under different polarization angles, showing the performance of the design structure of the present invention under different polarizations, and the symmetry of the structure is not destroyed by the feed network system due to the design method of loading the switching diode on the I layer along the-x axis and the-y axis. As shown, in the polarization range of 0-90, the structure achieves bandpass and shielding performance responses in the off and on states, respectively. From the results of the test, the proposed novel structure can operate at full polarization, with nearly identical response obtained.
FIG. 7 is a graph showing performance curves of the structure according to the embodiment of the present invention under oblique incidence, showing performance of the structure under different incidence angles, and performance test of the structure based on TE incident waves. As shown, at 0-60 ° incidence, stable filter and shielding performance responses are achieved in both the off and on states. No significant change in transmission performance response was observed in the range of less than 45 ° in the off state, with a ripple level of less than 3dB at 60 ° incidence. In the on state, the structure is obliquely incident to obtain better shielding performance response.
Fig. 8 is a graph showing the electric field distribution in the plane of the propagation direction of the incident wave, and the reliability of the proposed novel structural design is verified by measuring the electric field distribution in the off state and the on state. As can be seen from fig. 8, the inventive structure does not exhibit electromagnetic energy leakage at the lower and higher stop bands, which indicates that the structure has a good shielding performance response. At the frequency point of 4.2 GHz, the working mode of the structure is switched to the off state by applying reverse bias voltage to the PIN diode, so that the incident wave can penetrate through the design structure, the electric field intensity of the AFSS structure is similar before and after, and a transmission window is obtained under the condition of low incident loss. When the structure is switched to the on state of the operation mode, a shielding characteristic response appears at the frequency point of 4.2 GHz. In addition, it can be seen from the figure that the maximum electric field strength within the stop band is twice that at the transmission window.
The novel ultra-wideband reconfigurable frequency selective surface with large incident angle and insensitive polarization is provided by the invention, and compared with the traditional structure, the structure adopts a technical method of a single-layer orthogonal feed network to realize different polarization control of the structure. The single-layer orthogonal feed network and the structural unit cells are cooperatively and integrally designed, different polarization control operation is realized by applying different bias voltages to the PIN diode, and high consistency of transmission characteristic response is obtained under different polarization. The invention designs a multilayer design structure to improve the stability of oblique incidence and realize stable transmission performance regulation response under a large angle incidence angle. The structure consists of three layers, and the reconfigurable characteristic of one-key switching is realized by changing the bias voltage of the diode. When reverse bias voltage is applied to the PIN diode, the structure is in a closed state, and the structure is used as a second-order filter with low ripple level, has the characteristic of high transmissivity, has the passband width of-3 dB of 41%, and has the minimum insertion loss of only 0.1dB. When forward bias voltage is applied, the AFSS structure can be switched to an on state, and units on the top layer of the AFSS structure are connected in a short way, so that an ultra-wideband shielding function in a frequency band of 0-10 GHz is achieved. Compared with the traditional structure, when the incident angle reaches 60 degrees, the structure can realize characteristic response showing filtering and shielding, and can obtain the large-angle characteristic and the ultra-bandwidth characteristic which are not possessed by the traditional structure.
It is apparent that the above description of the embodiments is only for aiding in the understanding of the method of the present invention and its core ideas. It should be noted that it will be apparent to those skilled in the art that several improvements and modifications can be made to the present invention without departing from the principles of the invention, and these improvements and modifications also fall within the scope of the claims of the invention.
Claims (9)
1. The ultra-wideband reconfigurable frequency selective surface insensitive to large incidence angle and polarization comprises a first dielectric plate, a second dielectric plate, a first conductive layer, a second conductive layer and a third conductive layer; the first dielectric plate is arranged above the second dielectric plate, a first conductive layer is arranged on the upper surface of the first dielectric plate, a second conductive layer is arranged between the first dielectric plate and the second dielectric plate, a third conductive layer is arranged on the lower surface of the second dielectric plate, the shapes and the sizes of rectangular outlines formed on the outermost sides of the three conductive layers are consistent, the surfaces of the conductive layers are in a central symmetrical distribution structure, and the positions of the first dielectric plate and the positions of the second dielectric plate are overlapped up and down and correspond to each other;
the first conductive layer comprises cross-shaped metal sheets, diodes and metal wires, wherein four parallel edges which are farthest from the center of each cross-shaped metal sheet are connecting edges, and the connecting edges of each cross-shaped metal sheet are aligned with the connecting edges of the rest cross-shaped metal sheets and then are connected;
Two adjacent connecting edges of the two cross-shaped metal sheets are connected through a diode to form a passage;
The two metal wires are respectively arranged at two ends of a diagonal line passing through the symmetrical center of the first conductive layer, the metal wires are connected and arranged on the centers of connecting edges, which are not connected with the rest cross-shaped metal sheets, of the cross-shaped metal sheets, the two metal wires are symmetrical relative to the center of the first conductive layer, and the two metal wires are used for applying bias voltage to the diode;
in the four cross-shaped metal sheets forming the second-order square matrix, two mutually parallel connecting edges in each cross-shaped metal sheet are respectively taken as midpoints and connected into line segments, the line segments are bisectors of the cross-shaped metal sheets, each cross-shaped metal sheet comprises two bisectors, the bisectors of each cross-shaped metal sheet are prolonged, connected and combined to form four bisector extension lines which are parallel in pairs, the two intersecting bisector extension lines are mutually perpendicular, and a square closed area formed by connecting the four bisector extension lines is a structural unit;
The first conductive layer comprises n multiplied by n structural units, wherein n is more than or equal to 2, n is a positive integer, and the structures of the structural units are identical to each other to form a frequency selective surface array;
The third conductive layer comprises a plurality of cross-shaped metal sheets, the arrangement mode of the cross-shaped metal sheets in the third conductive layer is the same as that of the cross-shaped metal sheets in the first conductive layer, one cross-shaped metal sheet is correspondingly arranged on the surface vertical direction of each cross-shaped metal sheet, the logic of the third conductive layer forming structural unit is consistent with that of the first conductive layer, and each structural unit in the third conductive layer is correspondingly provided with one structural unit in the first conductive layer in an overlapping manner along the surface vertical direction.
2. The ultra wideband reconfigurable frequency selective surface insensitive to large incident angle and polarization according to claim 1, wherein in the first conductive layer, the communicating metal sheet reflects electromagnetic waves irradiating the surface thereof, the intermittent metal sheet transmits electromagnetic waves irradiating the surface thereof, and full polarization shielding and transmission of electromagnetic waves are realized by controlling the bias state of the diode in the first conductive layer and combining the three-layer conductive layer structure;
When reverse bias voltage is applied to two ends of the diode by the metal wire, the structure is in an off working state, and when forward bias voltage is applied to two ends of the switch diode, the structure is in an on working state.
3. The ultra wideband reconfigurable frequency selective surface insensitive to large incident angle and polarization according to claim 1, wherein the cross-shaped metal sheet in the first conductive layer is a groove cross-shaped metal sheet, the connecting sides of the groove cross-shaped metal sheet are straight line segments parallel to each other, and the arc-shaped groove on each diagonal of the groove cross-shaped metal sheet points to the symmetrical center position of the structural unit;
Wherein s is the linear distance between the arc top angles and the bottom angles of the grooves, the top angles are the angles formed by converging the upper ends of the arc grooves on the four opposite angles of the structural unit, the bottom angles are the angles formed by converging the lower ends of the arc grooves on the four opposite angles of the cross-shaped metal sheet and the rectangle, b is the broadband distance of the top angles of the grooves, the broadband distance of the top angles of the grooves is the distance between the upper ends of the adjacent arc grooves on the four opposite angles of the cross-shaped metal sheet, e is the arc length of the arc top angles of the grooves, the arc length of the top angles is the arc circumference length of the arc upper ends of the arc grooves on the four opposite angles of the cross-shaped metal sheet from the lower ends, d is the width of the protruding rectangle of the edges of the grooves, the width of the protruding rectangle of the edges of the grooves is the linear distance between the lower ends of the arc grooves on the four opposite angles of the unit structure and the protruding rectangle, s=2.4mm, b=0.25mm, e=0.39 mm, and d=0.3 mm; eight metal discs are hollowed out on the cross-shaped metal sheet of the groove, and the radius of each metal disc is a=1 mm.
4. The ultra wideband reconfigurable frequency selective surface of claim 1, wherein the second conductive layer comprises a plurality of cross-shaped metal sheets connected to one another, the structural elements of the second conductive layer being cross-shaped metal sheets, n times n cross-shaped metal sheets forming an array of frequency selective surfaces, the cross-shaped metal sheets in the second conductive layer being aligned with the structural elements of the first conductive layer and the third conductive layer.
5. The ultra wideband reconfigurable frequency selective surface with large incident angle and polarization insensitivity according to claim 4, wherein the width g = 3.5mm of the cross-shaped metal sheet.
6. The ultra wideband reconfigurable frequency selective surface of claim 1, wherein the cross-shaped metal sheet in the third conductive layer is a notched cross-shaped metal sheet;
Wherein j is the linear distance between the arc top angles and the bottom angles of the grooves, the top angles are the angles formed by converging the upper ends of the arc grooves on the four diagonal angles of the cross-shaped metal sheet, the bottom angles are the angles formed by converging the lower ends of the arc grooves and the rectangles on the four diagonal angles of the structural unit, n is the broadband distance between the upper ends of the adjacent arc grooves on the four diagonal angles of the cross-shaped metal sheet, j=2.14 mm, n=0.25 mm, k is the arc length of the arc top angles of the grooves, the arc length of the top angles is the arc circumference length of the upper ends of the arc grooves on the four diagonal angles of the unit structure, q is the width of the protruding rectangles of the edges of the grooves, m is the chamfer length between the protruding rectangular edges of the grooves and the arc top angles of the grooves, k=0.39 mm, q=0.96 mm, m=2.89 mm, eight metal wafers are hollowed out on each cross-shaped metal wafer, and the radius l=1 mm.
7. The high incidence angle polarization insensitive ultra wideband reconfigurable frequency selective surface of claim 1, wherein the thickness of said first dielectric plate is 2mm and the thickness of said second dielectric plate is 4mm.
8. The large angle of incidence polarization insensitive ultra wideband reconfigurable frequency selective surface of claim 1, wherein the relative dielectric constant of the first dielectric plate and the second dielectric plate is 3.
9. The ultra wideband reconfigurable frequency selective surface of claim 3, wherein diodes are disposed around the grooved cross-shaped metal sheet to form a single layer orthogonal feed network structure.
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| CN111555037A (en) * | 2020-05-19 | 2020-08-18 | 中国人民解放军空军工程大学 | Time domain switch regulation and control frequency selection surface with polarization selection characteristic |
| CN213959136U (en) * | 2021-01-20 | 2021-08-13 | 桂林电子科技大学 | Frequency selective surface |
| CN114421152A (en) * | 2022-01-24 | 2022-04-29 | 西安电子科技大学杭州研究院 | Miniaturized reconfigurable frequency selection surface with high selection characteristic and application |
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| CN109273859A (en) * | 2018-10-17 | 2019-01-25 | 哈尔滨工业大学 | Coupled mode broadband active frequency-selective surfaces |
| CN111555037A (en) * | 2020-05-19 | 2020-08-18 | 中国人民解放军空军工程大学 | Time domain switch regulation and control frequency selection surface with polarization selection characteristic |
| CN213959136U (en) * | 2021-01-20 | 2021-08-13 | 桂林电子科技大学 | Frequency selective surface |
| CN114421152A (en) * | 2022-01-24 | 2022-04-29 | 西安电子科技大学杭州研究院 | Miniaturized reconfigurable frequency selection surface with high selection characteristic and application |
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