CN116487896A - Polarization independent control multimode switchable frequency selective filter - Google Patents
Polarization independent control multimode switchable frequency selective filter Download PDFInfo
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- CN116487896A CN116487896A CN202310738559.3A CN202310738559A CN116487896A CN 116487896 A CN116487896 A CN 116487896A CN 202310738559 A CN202310738559 A CN 202310738559A CN 116487896 A CN116487896 A CN 116487896A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0053—Selective devices used as spatial filter or angular sidelobe filter
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/002—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices being reconfigurable or tunable, e.g. using switches or diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/0026—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices having a stacked geometry or having multiple layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/24—Polarising devices; Polarisation filters
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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- Waveguide Switches, Polarizers, And Phase Shifters (AREA)
Abstract
The invention discloses a frequency selective filter with polarization independent control and multimode switching, which comprises five layers of periodic unit structures, wherein each layer of periodic unit structure comprises a first FSS layer, a first layer of dielectric plate, a second FSS layer, a second layer of dielectric plate and a third FSS layer which are sequentially arranged, and the surfaces of each layer are in surface-to-surface contact; connecting a first PIN diode at a middle gap of the third FSS layer; and two sides of the first FSS layer are connected with second PIN diodes, the first PIN diodes are arranged along the TE polarization direction, and the second PIN diodes are arranged along the TM polarization direction. The invention adopts orthogonal top-layer and bottom-layer FSS structures to respectively control TE waves and TM waves, obtains switchability by using PIN diode control, realizes four independent working modes by different bias voltage combinations, has greater flexibility in practical application, and plays an important role in improving the spectrum utilization efficiency in wireless communication.
Description
Technical Field
The invention relates to the technical field of filters, in particular to a frequency selective filter with polarization independent control and multi-mode switching.
Background
The frequency selective surface (Frequency Selective Surface, FSS), also known as an artificial electromagnetic metamaterial, is composed of a series of periodically arranged metal sheets or conductors, the size and spacing of which are comparable to or smaller than the wavelength of electromagnetic waves. FSS is designed to selectively transmit, reflect or absorb electromagnetic waves in a specific frequency range. The frequency selectivity control of the electromagnetic wave can be realized by adjusting the size, shape and arrangement mode of the metal sheets. In recent years, the excellent spatial filtering performance attracts attention of students in various fields, especially in the fields of wireless communication, radar systems, microwave technology, optics and the like, and the filter can be used for various application scenes such as radomes, filters, isolation shields, reflectors, absorbers and the like. FSS structures with various characteristics have been studied by students, such as ultra wideband, dual frequency, polarization insensitivity, etc., however, most FSS designs are passive, the filtering characteristics of electromagnetic waves are usually unchangeable, and the realized functions are single, which leads to limitations of application in modern complex communication environments.
Saikat Chandra Bakshi et al in the document A Frequency Selective Surface Based Reconfigurable Rasorber With Switchable Transmission/Reflection Band (Ieee Antennas and Wireless Propagation Letters, 2019, 18 (1): 29-33.) designed a reconfigurable electromagnetic metamaterial with integrated absorption based on a resistive frequency selective surface structure, and realized a mode switching function of s-Band by loading a PIN diode on the bottom layer, but could not realize separate control of TE and TM polarization.
Gulab Shah et al in the literature A2 b Dual-Band Multifunction Frequency Selective Surface (Ieee Antennas and Wireless Propagation Letters, 2020, 19 (6): 954-8) propose a novel switchable 2-b structure with Dual-band polarization selection, orthogonal FSS structures are designed on both sides of the medium to regulate TE and TM polarization, and have certain angular stability, but the FSS structure has a passband in each working mode and is not completely shielded.
Bixiao Jiang et al in document A Polarization-instrumentation Dual-Band FSS With High Selectivity and Independently Switchable Characteristics (IEEE Antennas and Wireless Propagation Letters, 2022, 22 (1): 14-8.) propose that loading PIN diodes on the basis of a multilayer structure of rectangular patches and coupling slots further explores a Dual frequency FSS with independently switchable properties, the state of which can be controlled independently. The double pass bands of the design can be independently opened or closed, but polarization independent regulation is still not achieved.
Gulab Shah et al, in documents A4-Bit Multistate Frequency-Selective Surface With Dual-Band Multifunction Response (Ieee Antennas and Wireless Propagation Letters, 2021, 20 (10): 1844-8.), propose A4-Bit multi-state dual-frequency FSS structure with polarization selection, but the pass bands of the multi-state dual-frequency FSS structure cannot be simultaneously turned on, making them unsuitable for communication systems that need to operate in two frequency bands simultaneously.
Therefore, from the practical application point of view, the metamaterial device with multiple functions has a wider application prospect, wherein adjustable, switchable and reconfigurable active FSS is widely researched and rapidly developed in the last ten years, but most active FSS devices still have some limitations at present, such as incapacity of realizing independent control of TE and TM polarization, incapacity of simultaneously working of pass bands or stop bands, and the like.
Disclosure of Invention
The invention aims to: aiming at the problems, the invention aims to provide a frequency selective filter with polarization independent control and multi-mode switchable, which obtains the expected TE and TM wave independent filter characteristics through a multi-layer FSS structure and realizes four working modes of dual polarization transmission, single polarization transmission/shielding and full shielding functions.
The technical scheme is as follows: the invention relates to a polarization independent control multimode switchable frequency selective filter, which comprises five layers of periodic unit structures, wherein each layer of periodic unit structure comprises a first FSS layer, a first layer of dielectric plate, a second FSS layer, a second layer of dielectric plate and a third FSS layer which are sequentially arranged, and the surfaces of each layer are in surface-to-surface contact; connecting a first PIN diode at a middle gap of the third FSS layer; and two sides of the first FSS layer are connected with second PIN diodes, the first PIN diodes are arranged along the TE polarization direction, and the second PIN diodes are arranged along the TM polarization direction.
Further, the first FSS layer, the second FSS layer, and the third FSS layer form a patch-grid-patch structure.
Further, each layer of the five-layer periodic unit structure is parallel to each other.
Further, the second FSS layer is an orthogonal grid structure with a hollow middle.
Further, the first FSS layer, the second FSS layer, and the third FSS layer are formed from PEC metal materials.
The beneficial effects are that: compared with the prior art, the invention has the remarkable advantages that: the invention adopts orthogonal top-layer and bottom-layer FSS structures to respectively control TE waves and TM waves, uses PIN diode control to obtain switchability, realizes four independent working modes by different bias voltage combinations, comprises dual polarization transmission, single polarization transmission/shielding and full shielding functions, and the four working modes work independently without influencing each other; the expected TE wave and TM wave independent filter characteristics are obtained through a multi-layer FSS structure, a polarized transmission window is respectively obtained in a low frequency band and a high frequency band, and transmission or shielding of TE or TM polarized waves can be independently controlled; the insertion loss of the transmission window is low, wherein the insertion loss of the low-frequency transmission window is almost zero, and the insertion loss of the high-frequency transmission window is only 0.008 dB; the switchable active FSS structure has greater advantages, has greater flexibility in practical application, and plays an important role in improving the spectrum utilization efficiency in wireless communication.
Drawings
FIG. 1 is a schematic diagram of a frequency selective filter according to an embodiment;
FIG. 2 is an expanded view of a frequency selective filter according to an embodiment;
FIG. 3 is an equivalent circuit model under TE polarization incidence;
FIG. 4 is an equivalent circuit model under TM polarization incidence;
fig. 5 is an equivalent circuit simulation result: (a) TE polarization, (b) TM polarization;
FIG. 6 is a simulation diagram of the S-parameters of the first mode of operation;
FIG. 7 is a simulation diagram of S parameters for a second mode of operation;
FIG. 8 is a simulation diagram of S parameters for a third mode of operation;
FIG. 9 is an enlarged view of a portion of an S-parameter simulation diagram of a third mode of operation;
FIG. 10 is a simulation diagram of S parameters for a fourth mode of operation;
fig. 11 is an enlarged view of a portion of an S-parameter simulation of a fourth mode of operation.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application will be further described in detail with reference to the accompanying drawings and examples.
The frequency selective filter with polarization independent control and multi-mode switchable can realize dual polarization transmission, single polarization transmission/shielding and full shielding functions, and comprises five layers of periodic unit structures, such as a schematic diagram of the five layers of periodic unit structures shown in fig. 1, and an unfolding schematic diagram of the unit structure shown in fig. 2, wherein the five layers of periodic unit structures comprise a first FSS layer 1, a first medium plate 2, a second FSS layer 3, a second medium plate 4 and a third FSS layer 5 which are sequentially arranged, and each layer is in surface-to-surface contact; connecting a first PIN diode at the middle gap of the third FSS layer 5; and two sides of the first FSS layer 1 are connected with second PIN diodes, the first PIN diodes are arranged along the TE polarization direction, and the second PIN diodes are arranged along the TM polarization direction.
In particular, the first FSS layer, the second FSS layer and the third FSS layer constitute a patch-grid-patch structure.
Specifically, each layer of the five-layer periodic unit structure is parallel to each other.
Specifically, the second FSS layer is an orthogonal grid structure with a hollow middle.
Specifically, the first FSS layer, the second FSS layer, and the third FSS layer are molded from PEC metal materials.
In a specific example, the TE polarization direction is set as the y axis, the TM polarization direction is set as the x axis, the FSS unit structures are periodically arranged along the +y and +x directions to form the frequency selective filter, the periodic unit structures are composed of three FSS layers of PEC metal materials and two dielectric layers of Rogers RO3003 materials, and the adjacent layers are respectively a first FSS layer, a first dielectric plate, a second FSS layer, a second dielectric plate and a third FSS layer from bottom to top, and all the adjacent layers are in close contact through surfaces. To achieve the desired TE, TM polarization independent filter characteristics, the three FSS layers in this example constitute a patch-grid-patch structure. The first FSS layer body is of a square structure, and a part of small squares extend from two sides of the square structure and are used for better connecting the first PIN diode. The third FSS layer main body structure is rectangular, a square and a strip-shaped gap is formed in the middle of the third FSS layer main body structure, the strips are symmetrically arranged on two sides of the square, and the second FSS layer main body structure is used for connecting a second PIN diode in the square gap. The first PIN diode is along the +y axis direction, the second PIN diode is along the +x axis direction, so that the TE polarization and the TM polarization are independently controlled, and the multimode switchable function is realized through the combination of different bias states of the two layers of PIN diodes. The second FSS layer adopts an orthogonal grid structure, and can respectively resonate with the first FSS layer and the third FSS layer under the condition of different polarized wave incidence to generate a transmission window.
In order to facilitate analysis of the working principle of the frequency selective filter, an Equivalent Circuit Model (ECM) corresponding to the periodic unit structure is established for analysis, and because PIN diodes arranged on the first FSS layer and the third FSS layer are orthogonally arranged and respectively correspond to different polarization forms, and the equivalent circuit model cannot distinguish the polarization directions of electromagnetic waves, the circuits under two polarization conditions need to be established for analysis respectively, as shown in fig. 3 and fig. 4, respectively, fig. 3 corresponds to the TE polarization incidence condition, and fig. 4 corresponds to the TM polarization incidence condition. In the equivalent process, the metal structure is equivalent to an inductor, and the inter-metal gap is equivalent to a capacitor. The equivalent circuit model is an initial structure designed by FSS in principle, and for a complex design structure, the influence of tiny inductance and capacitance can be ignored in the circuit. When TE polarization is incident, the corresponding equivalent circuit of the unit structure is shown in FIG. 3, and it can be seen from the figure that the third FSS layer can be simplified and equivalent to the inductance L 1 A circuit connected in series with the diode, the second FSS layer being equivalent to a capacitor C 1 And inductance L 2 The first FSS layer is equivalent to a capacitor C 2 Is a branch of (c). The third FSS layer and the second FSS layer cooperate when the second PIN diode is in the off stateA transmission window of TE polarization is created, while the first FSS layer has little regulatory capability for TE waves due to its alignment direction orthogonal to the TE polarization. When the second PIN diode is conducted, the third FSS layers adjacent along the y-axis direction are communicated, the third FSS layers correspond to grid-shaped metal structures, TE polarization incident in the same direction is reflected, a transmission window disappears, and the mode is switched into a TE polarization shielding mode. Similarly, when TM polarization is incident, the equivalent circuit corresponds to fig. 4, the equivalent circuits of the first FSS layer and the third FSS layer are changed due to the change of the incident polarization direction, and the second FSS layer is kept unchanged due to the symmetrical structure, i.e. the first FSS layer is simplified to be equivalent to the inductance L 3 A circuit connected in series with the diode, the second FSS layer being equivalent to a capacitor C 1 And inductance L 2 The third FSS layer is equivalent to a capacitor C 3 Is a branch of (c). When the first PIN diode is cut off, the second FSS layer and the first FSS layer generate a TM polarized transmission window at a higher frequency band; when the first PIN diode state is switched on, the TM polarization does not penetrate the cell structure, i.e. is shielded. The parameters of the components of the final equivalent circuit are respectively as follows:L 1 =2.75 nH，L 2 =1.11 nH，L 3 =2.89 nH，C 1 =0.02 pF，C 2 =0.043 pF，C 3 =0.019pF, pin diode built-in capacitanceC Diode =0.18 pF，L Diode =0.7 nH，R Diode =1.7 Ω，LCIn the off-state, the device is in the off-state,LRis in an on state.
Simulation software Advanced Design System 2020 is used for performing simulation on the equivalent circuit in fig. 3-4, and the result is shown in fig. 5, wherein (a) in fig. 5 corresponds to the equivalent circuit in fig. 3, and (b) in fig. 5 corresponds to the equivalent circuit in fig. 4, when all PIN diodes are in a cut-off state, for TE polarized incident waves, the equivalent circuit of the structure generates a transmission window at a low frequency of 3.7 GHz; for TM polarized incident waves, a transmission window is formed at high frequencies of 5.2 GHz. When all PIN diodes are on, both polarizations are in shielding mode. Based on the different working modes of different polarizations, the frequency selective filter can realize four mode switchable functions of polarization independent control.
Fig. 6 shows an S-parameter simulation diagram of the first working mode, where both the TE and TM waves are in transmission states, and the PIN diodes loaded on the third FSS layer and the first FSS layer are not turned on, the TE polarized wave forms a transmission window at the center frequency point of 3.8 GHz, the insertion loss is only 0.016 db, the TM polarized wave forms a transmission window at the center frequency point of 5.2 GHz, and the insertion loss is only 0.1 dB.
Fig. 7 is a S-parameter simulation diagram of a second operation mode, in which only the second PIN diode of the third FSS layer is turned on and switched to function of shielding the TE polarized wave, and it can be seen from the diagram that the transmission window at 3.8 GHz disappears, indicating that the TE wave is totally reflected. Meanwhile, the TM wave working state is not influenced by the change of the TE wave transmission state in the working mode, and the transmission window at the 5.2 GHz position can still be stably maintained.
Fig. 8 is an S-parameter simulation diagram of the third operation mode, and fig. 9 is a partially enlarged diagram of the S-parameter simulation diagram of the third operation mode, in which only the first PIN diode of the first FSS layer is turned on, so as to switch the TM wave operation state without affecting the TE wave operation state, in order to more clearly show the reflection curve (near 0) in the off-mode.
Fig. 10 shows a simulation diagram of the S-parameters of the fourth mode of operation, and fig. 11 shows a partially enlarged diagram of the S-parameters of the fourth mode of operation, in which the FSS layer is completely equivalent to a mask, and neither the TE nor the TM wave can penetrate the frequency selective filter, in order to more clearly show the reflection curve (near 0) in the cut-off mode.
The invention provides a switchable frequency selective filter with four different working modes, which obtains the expected TE wave and TM wave independent filtering characteristics through a multi-layer FSS structure, namely, obtains a transmission window in each of a low frequency band and a high frequency band. The junctions of the first FFS layer and the third FSS layer are orthogonally arranged, and the TE wave and the TM wave are respectively controlled correspondingly. To obtain switchability, a PIN diode is used for control and four independent modes of operation can be achieved by different voltage biases. For ease of investigation, two equivalent circuits were used in the examples to analyze TE and TM wave characteristics, respectively. In the transmission mode, the structural TE wave can have higher transmission efficiency in the low frequency band, and the TM wave can be transmitted in the high frequency band. In the shielding mode, neither the TE wave nor the TM wave can penetrate the cell structure. Finally, the result which is consistent with the expected result is obtained through circuit calculation simulation, full-wave simulation and sample test. The switchable active FSS structure has greater advantages, has greater flexibility in practical application, and plays an important role in improving the spectrum utilization efficiency in wireless communication.
Claims (5)
1. The frequency selective filter is characterized by comprising five layers of periodic unit structures, wherein the five layers of periodic unit structures comprise a first FSS layer, a first dielectric plate layer, a second FSS layer, a second dielectric plate layer and a third FSS layer which are sequentially arranged, and each layer is in surface-to-surface contact; connecting a first PIN diode at a middle gap of the third FSS layer; and two sides of the first FSS layer are connected with second PIN diodes, the first PIN diodes are arranged along the TE polarization direction, and the second PIN diodes are arranged along the TM polarization direction.
2. The frequency selective filter of claim 1, wherein the first FSS layer, the second FSS layer, and the third FSS layer comprise a patch-grid-patch structure.
3. The frequency selective filter of claim 1, wherein each layer of the five-layer periodic unitary structure is parallel to each other.
4. The frequency selective filter of claim 1, wherein the second FSS layer is a mid-void orthogonal grid structure.
5. The frequency selective filter of claim 1, wherein the first FSS layer, the second FSS layer, and the third FSS layer are formed from PEC metal materials.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115714272A (en) * | 2022-12-12 | 2023-02-24 | 南京信息工程大学 | Ultra-wideband reconfigurable frequency selection surface insensitive to large incident angle and polarization |
| CN116130970A (en) * | 2022-12-12 | 2023-05-16 | 南京信息工程大学 | Novel frequency selective surface with independent control working mode |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115714272A (en) * | 2022-12-12 | 2023-02-24 | 南京信息工程大学 | Ultra-wideband reconfigurable frequency selection surface insensitive to large incident angle and polarization |
| CN116130970A (en) * | 2022-12-12 | 2023-05-16 | 南京信息工程大学 | Novel frequency selective surface with independent control working mode |
Non-Patent Citations (1)
| Title |
|---|
| 贾宏燕;李田泽;杨淑连;魏芹芹;刘洋;徐芝美;: "多功能有源频率选择表面", 雷达科学与技术, no. 05 * |
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