CN115683400B - High-sensitivity pressure sensor based on composite nitride and magnetostrictive material structure, signal acquisition module and circuit system - Google Patents
High-sensitivity pressure sensor based on composite nitride and magnetostrictive material structure, signal acquisition module and circuit system Download PDFInfo
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Abstract
A high-sensitivity pressure sensor, a signal acquisition module and a circuit system based on a composite nitride and magnetostrictive material structure belong to the field of semiconductor sensors. A buffer layer, a channel layer and a barrier layer are sequentially grown on a substrate, the channel layer and the barrier layer form a heterojunction, a two-dimensional electron gas is generated at a contact interface of the channel layer and the barrier layer, and a magnetostriction layer and a dielectric layer are sequentially arranged above the barrier layer; the source electrode and the drain electrode are arranged on two sides of the barrier layer, respectively contact with the magnetostriction layer and the dielectric layer, and the grid electrode is arranged on the dielectric layer; the manufactured high-sensitivity pressure sensor forms a Wheatstone bridge for signal acquisition, and is connected with a bridge and a circuit system to display the pressure on a display screen. The invention effectively improves the pressure sensitivity, has small volume, high integration level, large measuring range and high response speed, can also be used for manufacturing a sensor array to realize two-dimensional or three-dimensional pressure sensing, and is expected to be applied to the fields of medical blood pressure, petrochemical industry, industrial electronic weighing, river water level monitoring and the like in the future.
Description
Technical Field
The invention belongs to the field of semiconductor sensors, and particularly relates to a high-sensitivity pressure sensor instrument based on a composite nitride and magnetostrictive material structure.
Background
The pressure sensor is a device or a device for sensing pressure signals and converting input pressure signals into output electric signals according to rules, and is widely applied to the fields of medical blood pressure, petrifaction, industrial electronic weighing and river water level monitoring. The existing pressure sensors mainly comprise piezoresistive pressure sensors, piezoelectric pressure sensors and capacitive pressure sensors. The piezoresistive pressure sensor utilizes the piezoresistive effect of metal or semiconductor material, the resistance of the chip changes after being pressed, the bridge loses balance, and a corresponding electric signal is output after a constant current source is applied to the bridge. The sensor has complex semiconductor processing technology, needs extra temperature compensation measures to inhibit zero drift, and cannot meet the requirement of small temperature drift in petrochemical industry. The pressure value of the pressure sensor is measured through the electrode difference generated at two ends of the piezoelectric material after being pressed, and the static pressure cannot be measured due to the fact that the electric charge quantity in the collected piezoelectric effect cannot be stored, the dynamic response capability is poor, and the requirement of electronic weighing static pressure in the market cannot be met. After the capacitive pressure sensor is pressed, the capacitance difference between the film electrode and the fixed electrode is converted into a voltage signal, the parasitic capacitance has large influence, and the symmetry is difficult to ensure during processing. Therefore, the pressure sensor with small volume, easy processing, high sensitivity, static and dynamic pressure measurement and high response speed is an urgent problem to be solved.
Compared with the traditional primary-secondary Si and GaAs semiconductors, the GaN third-generation semiconductor material has the characteristics of a forbidden bandwidth of 3.45eV, a critical breakdown electric field of more than 3MV/cm, an electron saturation migration speed of up to 2X 10 7 cm/s and the like. Due to spontaneous polarization and piezoelectric polarization, the AlGaN/GaN heterojunction interface generates high-density two-dimensional electron gas (2 DEG) under unintentional doping, and the electron mobility of the conductive channel reaches 2000cm 2/(V.S). The two-dimensional electron gas is sensitive to the external physical quantities such as gas, magnetic field, phonon, heat and the like, and the pressure source can also cause the change of the concentration of the two-dimensional electron gas, and even smaller pressure can cause the larger change of the concentration of the two-dimensional electron gas.
The giant magnetostrictive material has high compressive strength and short response time; the electromechanical coupling coefficient is up to 70% and is far higher than 40% of that of piezoelectric ceramics PZT in electrostrictive materials; the magnetostriction coefficient is about tens of times of Fe and Ni, and the generated strain is 15-30 times higher than that of the electrostriction material piezoelectric ceramic PZT material; the magnetic field sensor has delta E effect (the magnetic permeability and stress state of the magnetostrictive material are changed by strain, the Young modulus is not constant), and the Young modulus can be changed by an external magnetic field, pressure, temperature and prestress, so that the magnetic field sensor is suitable for various extremely severe environments; the Curie temperature is above 300 ℃, and the high temperature of 200 ℃ can still work stably when the pressure sensor is manufactured; there is no degradation of performance due to aging after long-term use. Terfenol-D (TbDyFe) is used as a representative of rare earth giant magnetostrictive materials, and the strain value generated by the Terfenol-D under the drive of a low magnetic field is up to 1500-2000 ppm, which is 5-8 times that of the traditional magnetostrictive material piezoelectric ceramics and 40-50 times that of a nickel-based material. The response speed of the magnetostriction coefficient along with the change of the magnetic field is very fast and reaches 10 -6 s. And has soft magnetic properties, i.e., low remanence and coercivity.
The device formed by the nitride material has tensile stress in the material, when the nitride material and the magnetostrictive material are combined, magneto-electric effect is generated, the magnetostrictive layer is subjected to magnetic field effect to generate magneto-induced strain (namely magnetostriction coefficient), the barrier layer of the nitride heterojunction is further deformed, the repetition rate of electron and hole ground state wave functions is greatly improved after the barrier layer is transferred to the channel layer, the recombination probability of the electron and hole ground state wave functions is increased, the overall polarization intensity is changed, the concentration of the 2DEG is greatly changed, and the performance of the pressure sensor device is improved. Therefore, the 2DEG is more sensitive to strain caused by pressure at this time, and the sensitivity is greatly increased. The invention thus proposes a high sensitivity pressure sensor based on a composite nitride and magnetostrictive material structure.
The piezoresistive pressure sensor, the piezoelectric pressure sensor and the capacitive pressure sensor in the market mostly need a plurality of power supplies to supply power, and have the advantages of huge volume, difficult processing, low response speed and poor sensitivity. The traditional giant magnetostrictive material passive pressure sensor works by utilizing the principle that a Wheatstone bridge converts deformation change of a magnetostrictive rod after pressure change into voltage signal output, and the upper permanent magnet, the lower permanent magnet and the trapezoidal yoke structure do not need additional power, but have low sensitivity, huge size, wide occupation, larger temperature influence, influence of parasitic capacitance effect and poor repeatability.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides the high-sensitivity pressure sensor with the composite material structure, which has the advantages of small volume, easy processing integration, high sensitivity, large measuring range and high response speed.
The technical proposal is as follows:
a high sensitivity pressure sensor based on a composite nitride and magnetostrictive material structure, comprising: the device comprises a substrate, a buffer layer, a channel layer, a barrier layer, a magnetostriction layer, a dielectric layer, a source electrode, a drain electrode and a grid electrode, wherein the buffer layer, the channel layer and the barrier layer are sequentially grown on the substrate, the channel layer and the barrier layer form a heterojunction structure, a contact interface between the channel layer and the barrier layer is induced by polarized charges to generate two-dimensional electron gas, and the magnetostriction layer and the dielectric layer are sequentially arranged above the barrier layer;
The source electrode and the drain electrode are arranged on two sides of the barrier layer, the source electrode and the drain electrode are respectively contacted with the magnetostriction layer and the dielectric layer, and the grid electrode is arranged on the dielectric layer.
Further, the substrate is any one of silicon, sapphire, silicon carbide, gallium nitride, gallium oxide and diamond material.
Further, the buffer layer is any one of AlN, gaN, alGaN.
Further, the channel layer is GaN or GaAs.
Further, the barrier layer is any one of AlN, alGaN, alGaAs.
Further, the magnetostrictive layer is any one of Fe, tbDyFe, feGaB, smPrFe and ferrite.
Further, the source electrode and the drain electrode are in ohmic contact with a composite metal structure, and the grid electrode is in Schottky contact or a metal/medium/semiconductor structure.
The invention further comprises a signal acquisition module based on the high-sensitivity pressure sensor, wherein the high-sensitivity pressure sensor R 1、R2、R3、R4 based on the composite nitride and magnetostrictive material structure is arranged on four bridge arms of the Wheatstone bridge circuit.
Further, the bridge balancing device also comprises a potentiometer r for balancing the bridge, wherein the potentiometer r is connected with the pressure sensor in parallel; the sensors which deform in the unbalanced state after the bridge is pressed are one or two opposite angles of R 1、R2、R3、R4.
The invention also includes a high sensitivity pressure sensor based circuitry comprising: the signal acquisition module is connected with the signal amplification module, the power module is respectively connected with the signal acquisition module, the signal amplification module and the data interface module, and the singlechip main control module is connected with the data interface module.
The beneficial effects of the invention are as follows:
The high-sensitivity pressure sensor, the signal acquisition module and the circuit system based on the composite nitride and magnetostrictive material structure disclosed by the invention are transmitted to the heterojunction barrier layer due to magnetic strain, so that the piezoelectric polarization intensity is changed to a greater extent, the concentration of the 2DEG is changed greatly, and on the basis, the high-concentration 2DEG is more sensitive to the external pressure to be measured, thereby effectively improving the pressure sensitivity; meanwhile, due to the fact that the magnetostrictive thin film and the III-IV nitride heterojunction are directly combined, the problem that the magnetostrictive rod-shaped material in a traditional magnetostrictive pressure sensor is large in size is avoided, therefore, the miniaturized pressure sensor is small in size and high in integration level, a sensor array can be manufactured, two-dimensional or three-dimensional pressure sensing is achieved, and the sensor array is expected to be applied to the fields of medical blood pressure, petrochemical industry, industrial electronic weighing, river water level monitoring and the like in the future.
The technical scheme of the high-sensitivity pressure sensor based on III-V nitride heterojunction combined magnetostrictive material provided by the invention is characterized in that: 1) The integration level is high: the nitride heterojunction semiconductor and the magnetostrictive thin film composite structure are adopted as sensitive materials, and the manufactured planar device has small volume and high integration level, can be manufactured into an array device, and realizes two-dimensional or three-dimensional pressure detection; 2) The measuring range is large: the detection type comprises compression type pressure and tension type pressure, and the detection pressure can be more than +/-100 kPa; 3) The sensitivity is high: the magnetostriction material generates large strain under a low magnetic field, and the magnetic strain is transmitted to the heterojunction interface to change the band bending caused by piezoelectric polarization of the channel layer to a greater extent, so that the 2DEG is more sensitive to the magnetic strain caused by pressure and a magnetic field.
The key point of the invention is sensor innovation, preparation technology and structural device design. In order to improve the pressure range and sensitivity of measurement, the key of the invention is to combine the magnetostrictive film and the III-IV nitride heterojunction together, and the external pressure is more sensitive to the change of the concentration of the 2DEG on the basis of magnetic strain, thereby effectively improving the sensitivity of the pressure sensor. The change of the strain current is converted into a voltage signal by utilizing a Wheatstone bridge, and the voltage signal is output and visually displayed by a singlechip. The scheme greatly reduces the size of the traditional magnetostrictive pressure sensor, remarkably improves the sensitivity and has wider detection pressure range.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following detailed description of the embodiments of the present invention will be given with reference to the accompanying drawings, which are to be understood as merely some embodiments of the present invention, and from which other drawings can be obtained by those skilled in the art without inventive faculty. Wherein:
FIG. 1 is a block diagram of a circuit arrangement of the present invention;
FIG. 2 is a schematic cross-sectional view of a high sensitivity pressure sensor according to the present invention;
FIG. 3 is a schematic view of a process flow according to an embodiment of the present invention;
FIG. 4 is a schematic circuit diagram of a signal acquisition and signal amplification module according to the present invention;
FIG. 5 is a schematic diagram of a power module according to the present invention;
FIG. 6 is a schematic diagram of a data interface module according to the present invention;
FIG. 7 is a schematic circuit diagram of a master control module of an STM32 singlechip in the application of the invention;
FIG. 8 is a schematic diagram of experimental results of the relationship between pressure and magnetostriction coefficient and output voltage proposed by the present invention;
FIG. 9 is a schematic diagram of a Wheatstone 1/4 bridge and half-bridge test.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
The high sensitivity pressure sensor, signal acquisition module and circuitry based on the composite nitride and magnetostrictive material structure are further described below in conjunction with fig. 1-9.
Example 1
The sensor device testing process of the invention is as follows:
1) Manufacturing a pressure sensor device of III-IV nitride combined magnetostrictive material by a process; 2) After current is introduced into the exciting coil, a bias magnetic field parallel to the surface of the sensor device is generated, the lead is connected with a pressure source and the device, and under the action of the magnetic field and the pressure, the sensor device generates magnetic strain; 3) The USB interface is connected to a PC computer, the PC computer imports a program containing the set values of pressure, magnetic field intensity, magnetostriction coefficient, voltage magnitude and duration, the set values of the voltage magnitude and duration can be a range value, the main control chip calibrates and compensates the detected values of the detected pressure magnitude and output voltage and the imported set values of the voltage magnitude and the voltage, and the pressure and the corresponding output voltage value are displayed in a 0LED display screen.
In one example of the invention, the circuit system comprises a signal acquisition module, a signal amplification module, a power supply module, a data interface module and an STM32 singlechip master control module. The signal acquisition module converts the pressure change into a voltage change by using a Wheatstone 1/4 bridge in FIG. 4; the signal amplification module processes the signal mainly by AD620 in FIG. 4, and comprises filtering and amplification, wherein the amplification factor is set by adjusting an external gain control resistor R g of AD620, and R g is set to be 5KΩ to amplify the signal by 10 times; the power module adopts USB5V in FIG. 5 to supply power, and converts 5V voltage into 3.3V voltage through a voltage reduction chip TPS73633 to supply power for the main control chip and the serial program downloading circuit; meanwhile, an LM2663 negative pressure conversion chip is adopted to convert 5V voltage into-5V voltage, and negative pressure power supply is provided for a signal amplifying circuit; the data interface module adopts a one-key downloading circuit and a USB-to-serial port unit CH340C in FIG. 6; the STM32 singlechip main control module adopts STM32F103RCT6 in FIG. 7 as a main control chip, comprises a crystal oscillator circuit, a data storage FLASH and EEPROM, keys BOOT and Key, a RESET circuit RESET and an OLED display pin, and converts amplified analog signals into digital signals through AD conversion to carry out OLED display, so that pressure detection is completed.
The realization process of the target device of the patent application comprises the following steps:
1) And (3) epitaxial growth: an AlGaN/GaN heterojunction structure and an AlN buffer layer are epitaxially grown on a 2-inch silicon substrate in a Metal Organic Chemical Vapor Deposition (MOCVD) mode, and the epitaxial layers are an AlN buffer layer with the thickness of 2nm, a 4 mu mGaN channel layer and an Al 0.25Ga0.75 N barrier layer with the thickness of 25nm in sequence from bottom to top. Preparing a 810nm magnetostrictive film above the heterojunction by a radio frequency magnetron sputtering method, wherein the sputtering power is 50-300W, the sputtering Ar 2 air pressure is 1-1.5 Pa, and the film is thermally annealed for 1-3 hours in an O 2 atmosphere at 400-475 ℃ after the film preparation is finished.
2) Mesa isolation: and etching the epitaxially grown sample by adopting Reactive Ion Etching (RIE), wherein the Cl 2 flow is controlled at 20sccm, the cavity pressure is 10mTorr, the etching power is 50W, the etching time is 2.5min, and the conducting channel is completely isolated by adopting a two-step method of combining conventional power etching and low power etching, wherein the etching depth is 120 nm.
3) And (3) gate etching: after the sample is subjected to photoetching development, inductively Coupled Plasma (ICP) is adopted, cl-based gas is utilized to etch the grid region to a depth of 800nm, and parameters of an etching process are optimized to reduce etching damage.
4) And (3) source-drain electrode ohmic contact manufacturing: after photolithographic development, a Ti/Al/Ni/Au (22/140/55/45 nm) tetra-layer alloy structure was deposited by electron beam evaporation and a Rapid Thermal Anneal (RTA) 20s was performed at 850℃in nitrogen to form ohmic contacts.
5) And (3) depositing a dielectric layer: atomic Layer Deposition (ALD) was used to deposit 1h at 200℃to produce 20nm of Al 2O3.
6) Preparing a gate electrode: after photolithography, the gate electrode Ag (100 nm) was deposited by electron beam evaporation, the distance between the drain electrode and the gate electrode being 4 μm and the width being 900 μm.
7) Passivation layer deposition and opening electrode window: and depositing a 300nm SiO 2 passivation layer by adopting a PECVD method, photoetching, opening holes by utilizing an ICP etching technology to expose electrode contact metal, and then magnetron sputtering to deposit 400nm Al at the electrode to manufacture a bonding pad.
Example 2
The test procedure was the same as in example 1. A high-sensitivity pressure sensor combining III-IV nitride magnetostrictive material TbDyFe sequentially grows a buffer layer, a GaN layer, an AlGaN barrier layer, a TbDyFe magnetostrictive layer and an Al 2O3 gate dielectric layer on a silicon substrate, a source electrode and a drain electrode are arranged on two sides of the dielectric layer, and the distance between the drain electrode and the gate electrode is 4 mu m.
The implementation process of the target device of the patent application is described as follows:
1) Preparing a substrate: 2 inch Si substrate material was prepared, sonicated in acetone (MOS grade) for 2 minutes, digested in a positive photoresist stripper at 60℃for 10 minutes, sonicated in acetone and ethanol for 3 minutes each, and rinsed with HF: h 2 o=1:5 in hydrofluoric acid for 30s, deionized water was cleaned and dried with clean N 2.
2) And (3) epitaxial growth: alGaN/GaN heterojunction structure, buffer layer AlN and magnetostriction layer TbDyFe are epitaxially grown by using a Metal Organic Chemical Vapor Deposition (MOCVD) mode and a magnetron sputtering method, the thickness of the channel layer is unintentionally doped with GaN and is4 mu m, the thickness of the barrier layer Al 0.25Ga0.75 N is 25nm, and the thickness of the buffer layer is 2nm. A Tb 0.3Dy0.7Fe1.9 film with the thickness of 810nm is prepared above the heterojunction by adopting a radio frequency magnetron sputtering method, wherein the Tb dysprosium iron alloy target material is 99.9% (Tb: dy: fe=0.3:0.7:1.9) phi 50.8x3mm, the magnetron sputtering power is 150W, the sputtering Ar 2 air pressure is 1Pa, the target distance is 60mm, the background vacuum degree is 1.5x -5 Pa, and the film is thermally annealed for 3 hours in an O 2 atmosphere at 475 ℃ after the film preparation is finished.
3) Mesa isolation: and etching the epitaxially grown sample by adopting Reactive Ion Etching (RIE), wherein the Cl 2 flow is controlled at 15sccm, the cavity pressure is 10mTorr, the etching power is 50W, the etching time is 2.5min, and the conducting channel is completely isolated by adopting a two-step method of combining conventional power etching and low power etching, wherein the etching depth is 120 nm.
4) And (3) gate etching: after the sample is subjected to photoetching development, inductively Coupled Plasma (ICP) is adopted, cl-based gas is utilized to etch the grid region to a depth of 800nm, and parameters of an etching process are optimized to reduce etching damage.
5) And (3) source-drain electrode ohmic contact manufacturing: after photolithographic development, a Ti/Al/Ni/Au (22/140/55/45 nm) tetra-layer alloy structure was deposited by electron beam evaporation and a Rapid Thermal Anneal (RTA) was performed for 30s at 830℃in nitrogen to form ohmic contacts.
6) And (3) depositing a dielectric layer: atomic Layer Deposition (ALD) was used to deposit 1h at 200℃to produce 20nm of Al 2O3.
7) Preparing a gate electrode: the electron beam evaporation deposited the gate electrode Ag (100 nm), the distance between the drain electrode and the gate electrode was 4 μm and the width was 500 μm.
8) Passivation layer deposition and opening electrode window: depositing a 400nm SiO 2 passivation layer by adopting a PECVD method, opening and etching a gate dielectric layer until the electrode is exposed to contact metal after photoetching, coating glue (AZp 4620 positive photoresist is used), homogenizing glue (forward rotation is 600rpm-3s, backward rotation is 1000rmp-20s, and the final photoresist thickness is 1 mu m), photoetching, developing (80 seconds), etching a window at a surface electrode by utilizing ICP (inductively coupled plasma) etching,
Post magnetron sputtering and depositing 400nm of Al at the wire bond pad.
FIG. 8 shows the relationship between the pressure and magnetostriction coefficient and output voltage of the sensor designed by the present invention. The pressure range that can be detected by the device (2.5 mm multiplied by 2.5 mm) reaches-70 kPa (the negative sign is the stretching pressure). When the magnetic field is only 0.4T, the magnetostriction coefficient of the sensor is 15.98 multiplied by 10 -6, under the action of the magnetic field of 0.4T and the tensile pressure of 70KPa, the sensor expansion coefficient reaches 312 multiplied by 10 -6, the magnetostriction coefficient is improved by 18.5%, the output voltage is improved by 1.8mV, and the sensitivity reaches 2.13mV/N.
Example 3
In order to further improve the sensitivity of the sensor and the measurement voltage range, the value of the output voltage is increased, and furthermore, the Wheatstone 1/4 bridge is changed into a Wheatstone half bridge. By utilizing the principle of converting strain generated by pressure into resistance change of a sensor device, R 1、R3 in the Wheatstone half bridge is the resistance of the deformation sensor device for sensing the pressure to be measured, the resistance values of the 4 resistors are equal to each other when the pressure is balanced, and the resistance increment of R 1 and R 3 is delta R. Wherein, the formula 1 is a Wheatstone 1/4 bridge output voltage formula, the formula 2 is a Wheatstone half-bridge output voltage formula, the easily obtained Wheatstone half-bridge output voltage is 2 times of the output voltage of the 1/4 bridge, and the sensitivity is correspondingly improved by 2 times.
Example 4
The technical scheme of the invention is as follows: the drain electrode and the source electrode of the pressure sensor device R 1、R2、R3、R4 are connected end to form a Wheatstone 1/4 bridge circuit, wherein the surface of the R 2、R3、R4 is wrapped with a magnetic shielding wire, two ends of a strain resistance lead of the pressure sensor are respectively connected with two input wires of the Wheatstone bridge, and the size of a potentiometer is adjusted to balance the bridge. The coil provides a bias magnetic field for the sensor, and the sensor generates strain under the combined action of the magnetic field and the pressure. And the external input power supply 12V is connected, a voltage signal is generated at the output end of the bridge after being pressed, the bridge converts the measured voltage signal into a corresponding voltage signal, and the singlechip processes the electric signal and displays the pressure and the corresponding voltage value in a one-to-one correspondence manner in the display screen.
The wheatstone bridge is a balanced bridge of 4 pressure sensor resistances, the 4 resistances being balanced when no external force is applied. When the sensor is deformed due to the applied pressure, the R 1 resistor is changed, the bridge is out of balance, and a voltage signal is output at the output end.
The circuit system comprises a signal acquisition module, a signal amplification module, a power supply module, a data interface module and a singlechip main control module. The signal acquisition module and the signal amplification module amplify the voltage signals of the Wheatstone bridge; the power supply module supplies power to the data interface module and the main control module; the data interface module comprises a USB interface and a USB-to-serial interface; the singlechip master control module comprises a master control chip, a storage module, a key, a reset module and a display module, wherein after continuous detection, the pressure and the corresponding voltage are displayed on the OLED display screen according to the calibration values of the pressure and the magnetostriction coefficient.
The schematic device structure of the technical scheme of the invention is shown in fig. 2: the substrate is made of silicon, sapphire, silicon carbide, gallium nitride, gallium oxide and diamond, a buffer layer and a III-V group heterojunction structure are epitaxially grown on the substrate, a magnetostriction layer is prepared by magnetron sputtering, an atomic layer deposition medium layer is formed, the buffer layer can be AlN or GaN or AlGaN (thickness is 10-300 nm), the channel layer is GaN or GaAs (thickness is 0.1-5 mu m), the barrier layer is AlN or AlGaN or AlGaAs (thickness is 2-100 nm), the material composition in the barrier layer is not limited, the magnetostriction layer is Fe or TbDyFe or FeGaB or SmPrFe or ferrite (thickness is 50-900 nm), the source electrode and the drain electrode are in ohmic contact of a composite metal structure, and the gate electrode is in Schottky contact or a metal/medium/semiconductor (MIS) structure. The shape of the electrode is not particularly limited, and may be rectangular, circular, or the like. The preparation method of the device comprises the following steps:
1) Preparing a substrate: preparing a substrate, cleaning the substrate material, and removing pollutants on the surface of the substrate.
2) And (3) epitaxial growth: the III-V group nitride heterojunction structure, the buffer layer and the magnetostriction layer are epitaxially grown in any mode by utilizing Metal Organic Chemical Vapor Deposition (MOCVD), molecular Beam Epitaxy (MBE), hydride Vapor Phase Epitaxy (HVPE), a magnetron sputtering method, a pulse laser deposition method PLD and ion beam sputtering deposition IBSD, wherein the thickness of the magnetostriction layer is 50-900 nm, the thickness of the channel layer is 0.1-5 mu m, the thickness of the barrier layer is 2-100 nm, the buffer layer can be AIN, gaN or a superlattice structure, and the thickness is 10-300 nm.
3) Mesa isolation: after photoetching, the device is electrically isolated by adopting a plasma etching or ion implantation or chemical solution wet etching method.
4) And (3) gate etching: and after photoetching, etching the gate region magnetostriction layer by adopting a plasma etching technology, wherein the residual thickness after etching is 5-20 nm.
5) Source and drain ohmic contact manufacture: after photoetching, a multi-layer metal lamination is grown by adopting an electron beam evaporation or thermal evaporation or magnetron sputtering method, and ohmic contact is formed by high-temperature thermal annealing.
6) And (3) depositing a dielectric layer: and growing the dielectric layer by adopting a chemical vapor deposition or atomic layer deposition or magnetron sputtering or thermal evaporation method.
7) Preparing a gate electrode: and after photoetching, growing a metal thin layer by adopting an electron beam evaporation or thermal evaporation or magnetron sputtering method to form a gate electrode.
8) Passivation layer deposition and opening electrode window: and growing a medium passivation layer by adopting a chemical vapor deposition or atomic layer deposition or magnetron sputtering or thermal evaporation method, removing the passivation layer by adopting a dry method or a wet method in each electrode area after photoetching, windowing leads, growing a metal layer by adopting an electron beam evaporation or thermal evaporation or magnetron sputtering method, manufacturing a bonding pad and carrying out leads.
The foregoing is only a preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art, who is within the scope of the present invention, should be covered by the protection scope of the present invention by making equivalents and modifications to the technical solution and the inventive concept thereof.
Claims (10)
1. A high sensitivity pressure sensor based on a composite nitride and magnetostrictive material structure, comprising: the semiconductor device comprises a substrate, a buffer layer, a channel layer, a barrier layer, a magnetostriction layer, a dielectric layer, a source electrode, a drain electrode and a grid electrode, and is characterized in that the buffer layer, the channel layer and the barrier layer are sequentially grown on the substrate, the channel layer and the barrier layer form a heterojunction structure, a contact interface between the channel layer and the barrier layer is induced by polarized charges to generate two-dimensional electron gas, and the magnetostriction layer and the dielectric layer are sequentially arranged above the barrier layer;
The source electrode and the drain electrode are arranged on two sides of the barrier layer, the source electrode and the drain electrode are respectively contacted with the magnetostriction layer and the dielectric layer, and the grid electrode is arranged on the dielectric layer.
2. The high sensitivity pressure sensor based on a composite nitride and magnetostrictive material structure according to claim 1, wherein the substrate is any one of silicon, sapphire, silicon carbide, gallium nitride, gallium oxide, diamond material.
3. The high sensitivity pressure sensor based on a composite nitride and magnetostrictive material structure according to claim 1, wherein the buffer layer is any one of AlN, gaN, alGaN.
4. The high sensitivity pressure sensor based on a composite nitride and magnetostrictive material structure according to claim 1, wherein the channel layer is GaN or GaAs.
5. The high sensitivity pressure sensor based on a composite nitride and magnetostrictive material structure according to claim 1, wherein the barrier layer is any one of AlN, alGaN, alGaAs.
6. The high-sensitivity pressure sensor based on a composite nitride and magnetostrictive material structure according to claim 1, wherein the magnetostrictive layer is one of Fe, tbDyFe, feGaB, smPrFe and ferrite.
7. The high sensitivity pressure sensor based on a composite nitride and magnetostrictive material structure according to claim 1, wherein the source and drain are composite metal structure ohmic contacts and the gate is schottky contact or metal/dielectric/semiconductor structure.
8. A signal acquisition module based on a high sensitivity pressure sensor, characterized in that the high sensitivity pressure sensor R 1、R2、R3、R4 based on a composite nitride and magnetostrictive material structure according to any one of claims 1-7 is arranged on four legs of a wheatstone bridge circuit.
9. The high sensitivity pressure sensor based signal acquisition module according to claim 8, further comprising a potentiometer r for balancing the bridge, the potentiometer r being connected in parallel with the pressure sensor; the sensors which deform in the unbalanced state after the bridge is pressed are one or two opposite angles of R 1、R2、R3、R4.
10. A high sensitivity pressure sensor based circuitry comprising: the signal acquisition module based on the high-sensitivity pressure sensor is characterized by comprising a signal amplification module, a power supply module, a data interface module, a singlechip main control module and the signal acquisition module based on the high-sensitivity pressure sensor, wherein the signal acquisition module is connected with the signal amplification module, the power supply module is respectively connected with the signal acquisition module, the signal amplification module and the data interface module, and the singlechip main control module is connected with the data interface module.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108321291A (en) * | 2018-01-29 | 2018-07-24 | 大连理工大学 | Hall sensor and preparation method thereof with two-dimensional electron gas channel barrier layer partial groove structure |
| CN109764983A (en) * | 2019-03-06 | 2019-05-17 | 京东方科技集团股份有限公司 | Double gate thin-film transistor, sensor and production method |
| CN110190116A (en) * | 2019-04-30 | 2019-08-30 | 大连理工大学 | A kind of high threshold voltage normally-off high electron mobility transistor and preparation method thereof |
| CN110890423A (en) * | 2019-11-28 | 2020-03-17 | 西安电子科技大学芜湖研究院 | High-voltage gallium nitride power device structure and preparation method thereof |
| CN114062978A (en) * | 2021-11-15 | 2022-02-18 | 东南大学 | MEMS magnetic field sensor based on piezoelectric tunnel effect and magnetic field measuring method |
| CN114899227A (en) * | 2022-05-07 | 2022-08-12 | 西安电子科技大学广州研究院 | Enhanced gallium nitride-based transistor and preparation method thereof |
| CN115207207A (en) * | 2022-09-14 | 2022-10-18 | 深圳市柯雷科技开发有限公司 | Method for manufacturing pressure sensor with composite structure of nitride and magnetostrictive material |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10942072B2 (en) * | 2018-11-20 | 2021-03-09 | International Business Machines Corporation | Nanoscale magnetic tunnel junction arrays for sub-micrometer resolution pressure sensor |
-
2022
- 2022-09-14 CN CN202211113649.5A patent/CN115683400B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108321291A (en) * | 2018-01-29 | 2018-07-24 | 大连理工大学 | Hall sensor and preparation method thereof with two-dimensional electron gas channel barrier layer partial groove structure |
| CN109764983A (en) * | 2019-03-06 | 2019-05-17 | 京东方科技集团股份有限公司 | Double gate thin-film transistor, sensor and production method |
| CN110190116A (en) * | 2019-04-30 | 2019-08-30 | 大连理工大学 | A kind of high threshold voltage normally-off high electron mobility transistor and preparation method thereof |
| CN110890423A (en) * | 2019-11-28 | 2020-03-17 | 西安电子科技大学芜湖研究院 | High-voltage gallium nitride power device structure and preparation method thereof |
| CN114062978A (en) * | 2021-11-15 | 2022-02-18 | 东南大学 | MEMS magnetic field sensor based on piezoelectric tunnel effect and magnetic field measuring method |
| CN114899227A (en) * | 2022-05-07 | 2022-08-12 | 西安电子科技大学广州研究院 | Enhanced gallium nitride-based transistor and preparation method thereof |
| CN115207207A (en) * | 2022-09-14 | 2022-10-18 | 深圳市柯雷科技开发有限公司 | Method for manufacturing pressure sensor with composite structure of nitride and magnetostrictive material |
Non-Patent Citations (1)
| Title |
|---|
| Galfenol薄片式力传感器的理论研究与设计;于少鹏;王博文;董丽元;;仪表技术与传感器;20200615(06);全文 * |
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