CN108649117B - Two-dimensional electronic air channel semi-depletion type Hall sensor and manufacturing method thereof - Google Patents
Two-dimensional electronic air channel semi-depletion type Hall sensor and manufacturing method thereof Download PDFInfo
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Abstract
A two-dimensional electronic air channel semi-depletion Hall sensor and a manufacturing method thereof belong to the field of semiconductor sensors. The technical points are as follows: sequentially growing buffer layer, epitaxial layer, barrier layer and main electrode on semiconductor substrate1And C2With respect to C0Central symmetry, said electrode C0And C1Middle and electrode C0And C2Between which a negative ion implantation region is arranged, the width of the negative ion implantation region is less than that of the main electrode C0And C1Or C0And C2With respect to the main electrode C, two negative ion implantation regions0Centrosymmetric, and respectively manufacturing sensing electrodes S on the surfaces of the two negative ion implantation regions1And S2Sense electrode S1And S2With respect to main electrode C0And (4) the center is symmetrical. Compared with a single-body material semiconductor, the invention utilizes the characteristic of high electron mobility in a semiconductor heterojunction channel, and on the other hand, the invention also carries out technical improvement on the structure of the device, and the longitudinal electric field of bound electrons in the channel is weakened by introducing negative ions into the barrier layer, thereby improving the voltage or current sensitivity of the device.
Description
Technical Field
The invention belongs to the field of semiconductor sensors, and particularly relates to a two-dimensional electron gas channel semi-depletion type Hall sensor and a manufacturing method thereof.
Background
The magnetic sensor is a device for converting magnetic field into corresponding electric physical quantity and sensing and detecting environmental magnetic field, can be used for measuring rotating speed, displacement, flow and the like, and has very wide application in civil and military fields. There are several kinds of magnetic sensors, and semiconductor hall magnetic sensors based on the hall effect principle, referred to as hall sensors for short. The sensor has the advantages of small volume, low power consumption, long service life, easy integration and the like, plays an important role in the practical application of the sensor, and is the development trend of the sensor in the future. Gallium nitride (GaN) -based group III-V heterostructure semiconductors are importantThe represented next-generation wide-band-gap semiconductor material has the characteristics of large critical breakdown electric field, high saturated electron drift rate, good chemical stability and the like, and is an important choice for manufacturing the Hall sensor in the future. One of the important indicators for evaluating the performance of a device in a hall sensor is voltage or current sensitivity, and the indicator is mainly limited by the mobility of material carriers, and the higher the mobility, the higher the sensitivity of the device. The GaN-based material has obvious advantages in Hall sensor application, high-density interface polarization charges exist on a heterojunction (typically AlGaN/GaN) interface, an induced electric field of the polarization charges attracts ionized electrons in the material or on the surface of the material, and the ionized electrons are converged at a potential well of the heterojunction interface to form a two-dimensional electron gas (2DEG) (the density is more than 10)13cm-2). As the two-dimensional electron gas transport channel has no doping of intentional elements and the movement direction of electrons is limited, the two-dimensional electron gas with the structure has obviously higher electron mobility (more than 2000 cm) than the bulk material2V-1s-1) The method is particularly suitable for manufacturing the Hall sensor. Therefore, the GaN-based heterojunction material Hall sensor has the advantages of wide potential working temperature range, high sensing sensitivity and the like, and has a very wide application prospect.
However, the hall sensor of this type also has some problems, one of the main problems is that although the existence of the two-dimensional electron gas channel can obviously improve the electron mobility, because the existence of the overhigh electric field (longitudinal electric field) perpendicular to the channel direction at the heterojunction interface, the electrons are completely bound in the interface channel, the capability of the lorentz force to drive the ion carriers to deviate from the original transport orbit in the hall effect is weakened, thereby leading to the reduction of the sensed voltage or current value and the limitation of the improvement of the voltage or current sensitivity index. Therefore, the invention provides a novel two-dimensional electron gas channel semi-depletion type Hall sensor structure, which can not only utilize the advantage of high mobility of a two-dimensional electron gas channel, but also ensure that carriers in motion can generate effective longitudinal deviation under a weak magnetic field signal, thereby improving the detection sensitivity of a device.
The existing semiconductor hall sensor mainly has two basic material structures, one is based on a uniform single body material, and the other is based on a semiconductor heterojunction (such as AlGaN/GaN, wherein an AlGaN layer has a wider band gap and is a barrier layer). The former adopts a single semiconductor material, has a simple structure, but the current transport property is easily influenced by the surface state of the material, and the carrier mobility of the single material is relatively low because the moving direction of the carriers is not limited. The latter heterojunction structure adopts more than two semiconductors, the heterojunction interface of the heterojunction structure has high-density spontaneous polarization or piezoelectric polarization charges, and the polarization charge induction electric field attracts ionized electrons in the semiconductor or on the surface of the semiconductor to be converged at a potential well of the heterojunction interface to form a two-dimensional electron gas (2 DEG). The two-dimensional electron gas with the structure has obviously higher electron mobility than the bulk material because the two-dimensional electron gas transport channel has no doping of intentional elements and the motion direction of electrons is limited.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a two-dimensional electron gas channel semi-depletion type Hall sensor and a manufacturing method thereof, wherein the sensor reserves a complete barrier layer, and negative ions stay on the barrier layer and do not enter a channel, so that a heterojunction interface is intact, and the two-dimensional electron gas channel of the sensor also has high electron mobility, thereby ensuring that the voltage or current sensitivity of a device is not reduced; the negative ions are injected and stay in the semiconductor barrier layer to form an electric field, and the direction of the electric field is opposite to that of a polarized charge induction electric field at a heterojunction interface, so that the longitudinal electric field of the two-dimensional electronic gas channel in the region can be obviously reduced, the capability of a current carrier longitudinally deviating from an original transport track is enhanced, an electrode sensing signal is improved, and the sensitivity of a device is favorably improved.
The technical scheme is as follows:
a two-dimensional electron gas channel semi-depletion Hall sensor comprises a buffer layer, an epitaxial layer and a barrier layer sequentially grown on a semiconductor substrate, wherein 3 main electrodes C are arranged on the surface of the barrier layer0、C1And C2Said main electrode C1And C2With respect to C0Central symmetry, said electrode C0And C1Middle and electrode C0And C2Between which a negative ion implantation region is arranged, the width of the negative ion implantation regionSmaller than main electrode C0And C1Or C0And C2With respect to the main electrode C, two negative ion implantation regions0Centrosymmetric, and respectively manufacturing sensing electrodes S on the surfaces of the two negative ion implantation regions1And S2Sense electrode S1And S2With respect to main electrode C0And (4) the center is symmetrical.
Further, the substrate is any one of Si, InAs, GaAs, SiC, GaN, ZnO, gallium oxide, boron nitride, diamond, sapphire, or quartz.
Further, the epitaxial layer and the barrier layer are any heterojunction material combination capable of generating two-dimensional electron gas.
Further, the epitaxial layer adopts GaAs, and the barrier layer adopts AlGaAs; or the epitaxial layer adopts GaN, and the barrier layer adopts AlGaN or InAlN; or the epitaxial layer adopts SiC, and the barrier layer adopts AlN.
Furthermore, the background carrier concentration range of the epitaxial layer and the barrier layer is 1.0-1.0 multiplied by 1018cm-3。
Furthermore, the thickness of the epitaxial layer is 0.1-100 μm, and the thickness of the barrier layer is 5-100 nm.
Further, the main electrode C0、C1And C2Is rectangular or circular in shape; the sensing electrode S1And S2Completely covering the negative ion implantation region or partially covering the negative ion implantation region.
The invention also comprises a manufacturing method of the two-dimensional electronic air channel semi-depletion type Hall sensor, which comprises the following steps:
s1, preparing a device base material which comprises a substrate, a buffer layer, an epitaxial layer and a barrier layer, wherein the device base material is sequentially cleaned by acetone, ethanol and deionized water, and the cleaning is ultrasonic cleaning, blow-drying by nitrogen and baking by an oven;
s2, defining the device table board by using a photoetching method, forming an etching window by gluing, glue homogenizing, photoetching and developing, and then etching the barrier layer and the epitaxial layer by using a wet etching method or a dry etching method, wherein the total etching depth is 100-1000 nm;
s3, defining the device barrier layer by using a photoetching method, forming an ion injection window by gluing, glue homogenizing, photoetching and developing, and then performing negative ion injection or surface implantation by adopting ICP, RIE or an ion implanter;
s4, activating the injected negative ions by a heat treatment method, and then depositing a dielectric layer on the surface of the barrier layer by PECVD, ALD or LPCVD methods for surface passivation, wherein the material of the dielectric layer is SiO2、Si3N4、AlN、Ga2O3、Al2O3、TiO2Any one or any combination thereof;
s5, defining main electrode and sensing electrode areas by using a photoetching method, forming an electrode deposition window by gluing, glue homogenizing, photoetching and developing, growing a single-layer or composite metal film by adopting an electron beam evaporation method, a magnetron sputtering method or a thermal evaporation method to form a contact electrode, and then forming metal/semiconductor ohmic contact by metal stripping, cleaning and annealing.
Further, in step S3, the negative ion is any one of a fluorine ion, an oxygen ion, a nitrogen ion, a sulfur ion, and a phosphorus ion.
Further, in the step S3, a low-power ion implantation process of 10-100W is adopted in the processing procedure.
The invention has the beneficial effects that:
the two-dimensional electronic gas channel semi-depletion type Hall sensor and the manufacturing method thereof have the following beneficial effects:
1) the complete barrier layer is reserved, and negative ions stay on the barrier layer and do not enter the channel, so that the heterojunction interface is intact, and the two-dimensional electron gas channel of the heterojunction interface also has high electron mobility, thereby ensuring that the voltage or current sensitivity of the device is not reduced;
2) the negative ions are injected and stay in the semiconductor barrier layer to form an electric field, and the direction of the electric field is opposite to that of a polarized charge induction electric field at a heterojunction interface, so that the longitudinal electric field of a two-dimensional electronic gas channel in the region can be obviously reduced, the capability of a current carrier longitudinally deviating from an original transport track is enhanced, an electrode sensing signal is improved, and the sensitivity of a device is favorably improved;
the mobility of electrons in a two-dimensional electron gas channel is not reduced by reserving a good heterojunction interface, and the longitudinal offset capability of the channel under a magnetic field is enhanced by weakening a longitudinal electric field for binding electrons in the channel, so that an electrode sensing signal is improved, and the sensitivity of a device is improved.
Compared with a single-body material semiconductor, the semiconductor heterojunction material channel has the characteristic of high electron mobility, and the heterostructure is technically improved, so that the longitudinal electric field of bound electrons in the channel is weakened by introducing negative ions into the barrier layer, and the performance of the device is improved. The Hall sensor manufactured by the technical scheme can be widely applied to various civil and military fields, and has the advantages of wider potential working temperature range, higher sensing sensitivity and the like.
Drawings
FIG. 1 is a schematic cross-sectional structure diagram of a two-dimensional electron air channel semi-depletion type Hall sensor proposed by the present invention;
FIG. 2 is a plan view of a two-dimensional electron air channel semi-depletion Hall sensor proposed by the present invention;
FIG. 3 is a schematic diagram of steps of a two-dimensional electron gas channel semi-depletion type Hall sensor manufacturing method according to the present invention;
fig. 4 is a schematic diagram of experimental verification results of the relationship between the voltage (or current) sensitivity of the two-dimensional electron gas channel semi-depletion type hall sensor and the density of fluorine ions implanted in the barrier layer.
Detailed Description
The two-dimensional electron gas channel semi-depletion type hall sensor and the manufacturing method thereof will be further explained with reference to fig. 1-4.
Example 1
The structure of the present embodiment is schematically shown in fig. 1 and fig. 2, and fig. 1 and fig. 2 are respectively a schematic interface structure and a schematic top-view structure of the device. Respectively growing a buffer layer, an epitaxial layer and a barrier layer on a semiconductor substrate, wherein the substrate can be any one of Si, InAs, GaAs, SiC, GaN, ZnO, gallium oxide, boron nitride, diamond, sapphire or quartz without special limitation; the epitaxial layer can be GaAs, GaN or SiC, and is not particularly limited; the barrier layer can be AlGaAs, AlGaN (or InAlN) or AlN corresponding to the epitaxial layer, and is not specially limited, the material composition in the barrier layer is not specially limited, and all the material combinations and parameter selections of the semiconductor heterojunction structure capable of generating two-dimensional electron gas are in the limited range of the patent.
The background carrier concentration range of the epitaxial layer and the barrier layer is 1.0-1.0 multiplied by 1018cm-3The thickness of the epitaxial layer is 0.1-100 μm, and the thickness of the barrier layer is 5-100 nm. The surface of the device comprises 3 main electrodes respectively C0、C1And C2Electrode C1And C2With respect to C0Centrosymmetric, and electrode C0、C1And C2The shape may be rectangular or circular, and is not particularly limited. At the electrode C0And C1And an electrode C0And C2The barrier layer in between is subjected to negative ion implantation (such as fluorine ion implantation), and the ion implantation regions on both sides are related to C0Central symmetry, width of implanted region is less than C0And C1Or C0And C2The electrode spacing therebetween is not particularly limited. Manufacturing a sensing electrode S on the surface of the ion implantation region1And S2Two side sensing electrodes with respect to C0Centrosymmetric, 3 main electrodes and 2 sense electrodes form good ohmic contact with the underlying semiconductor.
The present invention proposes that the electrode C can be used1And C2As a common terminal ground at electrode C0By applying current or voltage to the electrodes S1And S2Measuring a potential difference therebetween; the electrode C can also be used0Grounded at the electrode C1And C2By applying a current or voltage to the electrodes S1And S2The potential difference is measured between them. Electrode C0、C1Current sum of C0、C2The current between them is of the same magnitude and opposite direction.
When a magnetic field is present parallel to the device surface, i.e. in the z-direction, as shown in FIG. 1, this is due to the fact thatElectrode C0→C1Current in between and C0→C2The current and the magnetic field are vertical to each other, so that the current carrier is acted by the Lorentz force vertical to the current direction and the magnetic field direction in the moving process, the longitudinal transport deviation occurs in the y direction, and the two sides S are provided with the vertical transport deviation1And S2At the position of the sensing electrode, the longitudinal offset directions of the carriers at two sides are opposite, so that the sensing electrode S can be provided with the carriers1And S2Hall potential difference is generated between the two electrodes to achieve the purpose of measuring the magnitude of the magnetic field.
In the proposal of the invention, the two-dimensional electron gas channel barrier layer carries out negative ion injection, and negative ions stay on the barrier layer and do not enter the channel, so the two-dimensional electron gas channel also has high electron mobility. In addition, the longitudinal electric field at the heterojunction interface of the negative ion injection barrier layer area is weakened, the carrier longitudinal offset transport capacity is obviously enhanced, and the sensing electrode S1And S2The Hall potential difference between the two Hall sensors is increased, and the detection sensitivity of the device is obviously improved compared with a Hall sensor made of a single material or a conventional heterojunction structure (without negative ion injection).
Device manufacturing process flow
Fig. 3 shows a basic process for manufacturing a hall sensor according to the present invention:
the first step is as follows: preparing a device chip material with a heterojunction structure:
the device base material comprises a substrate, a buffer layer, an epitaxial layer and a barrier layer. The device material is ultrasonically cleaned by acetone, ethanol and deionized water respectively, then is dried by nitrogen and is baked in an oven for standby.
The second step is that: etching and isolating the device table top:
the method comprises the steps of defining a device table board by utilizing a photoetching technology, forming a good etching window through steps of gluing, photoresist homogenizing, photoetching, developing and the like, and then etching a material barrier layer and an epitaxial layer by adopting a wet etching technology or a dry etching technology, wherein the total etching depth is generally 100-1000 nm.
The third step: and (3) injecting negative ions into the barrier layer to form semi-depletion type two-dimensional electron gas:
defining a barrier layer region of a device by utilizing a photoetching technology, forming an ion injection window through steps of gluing, glue homogenizing, photoetching, developing and the like, then carrying out negative ion injection or surface implantation by adopting equipment such as ICP (inductively coupled plasma), RIE (reactive ion etching) or an ion implanter, wherein negative ions can adopt fluorine, oxygen, nitrogen, sulfur, phosphorus ions and the like, and the processing process is characterized in that a low-power ion injection optimization process is adopted, so that the situation that the negative ions enter a heterojunction interface to damage a two-dimensional electron gas channel is avoided.
The fourth step: heat treatment and surface passivation:
activating the injected negative ions by optimized heat treatment process, and depositing a dielectric layer on the surface of the barrier layer by PECVD, ALD, LPCVD or other techniques for surface passivation, wherein the dielectric layer can be made of SiO2、Si3N4、AlN、Ga2O3、Al2O3、TiO2Or combinations thereof, etc., the surface passivation may reduce device leakage current and isolate external contaminants.
The fifth step: electrode manufacturing:
the main electrode and sensing electrode areas are defined by utilizing a photoetching technology, a good electrode deposition window is formed through the steps of gluing, glue homogenizing, photoetching, developing and the like, a single-layer or composite metal film is grown by adopting the deposition technologies such as electron beam evaporation, magnetron sputtering, thermal evaporation and the like to form a contact electrode, and then good metal/semiconductor ohmic contact is formed through metal stripping, cleaning and annealing.
Example 2
1. Device structure parameters
Adopts AlGaN/GaN heterojunction material, the epitaxial layer is unintentionally doped GaN, the thickness is 10 μm, and the background electron concentration is less than 5 × 1016cm-3The barrier layer is AlGaN with a thickness of 20nm and an Al component of 0.25. Three main electrodes C of chip0、C1And C2Width of 10 μm, two sensing electrodes S1And S2Each having a width of 3 μm, wherein the electrode C0And electrode C1、C2The spacing is 10 μm, and the electrodes C0And an electrode S1、S2The pitches are 3.5 μm, and the electrode lengths are 100 μm.
2. Device manufacturing process
The first step is as follows: preparing a device chip material with a heterojunction structure:
the device material is respectively subjected to ultrasonic cleaning by acetone, ethanol and deionized water, the ultrasonic time of each step is 10min, and then the device material is dried by nitrogen and baked for 10min at the temperature of 110 ℃ in an oven for later use.
The second step is that: etching and isolating the device table top:
the method comprises the steps of defining a device table board by utilizing a photoetching technology, forming a good etching window through steps of gluing, photoresist homogenizing, photoetching, developing and the like, and etching a material barrier layer and an epitaxial layer by utilizing an inductively coupled plasma etching (ICP) technology, wherein the etching power is 200W, the gas flow is 150sccm, the etching time is 250s, and the total etching depth is about 400 nm. The third step: and (3) injecting negative ions into the barrier layer to form semi-depletion type two-dimensional electron gas:
defining a fluorine ion implantation area by utilizing a photoetching technology, wherein the width of the implantation area is 5 mu m, forming an ion implantation window through steps of gluing, glue homogenizing, photoetching, developing and the like, and then performing fluorine ion implantation on the surface of the barrier layer by adopting Reactive Ion Etching (RIE) equipment, wherein the plasma power is 25W, and the ion implantation time is respectively 30, 60, 90, 120 and 150 s.
The fourth step: heat treatment and surface passivation:
putting the sample in rapid thermal annealing equipment, introducing nitrogen, and performing rapid annealing at the temperature of 300 ℃ for 60s so as to activate the injected negative ions; deposition of 100nm SiO by Plasma Enhanced Chemical Vapor Deposition (PECVD)2The growth temperature is 300 ℃, and the growth time is 130 s.
The fifth step: electrode manufacturing:
defining each electrode region by using photoetching technology, forming an electrode deposition window by steps of gluing, photoresist homogenizing, photoetching, developing and the like, depositing four layers of metals of Ti/Al/Ni/Au by adopting an electron beam evaporation method, wherein the corresponding thickness of each layer of metal is 20/120/45/55nm, and performing N annealing at 850 ℃ by using a high-temperature annealing furnace2Annealing for 30s in the environment to form good ohmic contact, and forming a device main electrode and a sensing electrode.
3. Device testing and evaluation
Main electrode C1And C2As common ground, to main electrode C0A voltage of 5V is excited while a uniform magnetic field of 0.5T is applied in the negative z-axis direction. Measured Hall sensing electrode S1And S2The potential difference therebetween was calculated for its current sensitivity and voltage sensitivity, and the results thereof are shown in fig. 4. The experimental result shows that the sensitivity of the device is closely related to the injection time of fluorine ions in the barrier layer, the concentration of the fluorine ions in the barrier layer is increased along with the increase of the injection time, and the negative charges generate an electric field to gradually counteract a longitudinal electric field in a two-dimensional electron gas channel below the barrier layer, so that the capability of electrons to longitudinally deviate from an original transport orbit is enhanced under the action of a magnetic field, and the current or voltage sensitivity of the device is obviously improved. The experimental result proves the correctness and feasibility of the technical scheme of the invention.
The technical scheme of the invention is an important technical supplement to the existing heterojunction material Hall sensor industry, and the Hall sensor provided by the invention can be applied to various fields such as civil use, aerospace, nuclear power stations, military industry and the like. The embodiments of the present invention are not intended to limit the present invention, and other heterojunction materials with two-dimensional electron gas are suitable for the scope of the present invention. Any semiconductor ion implantation and surface implantation techniques, with the purpose of forming a negative charge of the barrier layer, or any modification or alteration, such as a change in the size, shape, equivalent substitution, etc., of the device electrode, shall fall within the scope of the present patent.
Claims (3)
1. A manufacturing method of a two-dimensional electronic air channel semi-depletion type Hall sensor is characterized by comprising the following steps:
s1, preparing a device base material which comprises a substrate, a buffer layer, an epitaxial layer and a barrier layer, wherein the device base material is sequentially cleaned by acetone, ethanol and deionized water, and the cleaning is ultrasonic cleaning, blow-drying by nitrogen and baking by an oven;
s2, defining the device table board by using a photoetching method, forming an etching window by gluing, glue homogenizing, photoetching and developing, and then etching the barrier layer and the epitaxial layer by using a wet etching method or a dry etching method, wherein the total etching depth is 100-1000 nm;
s3, defining the device barrier layer by using a photoetching method, forming an ion injection window by gluing, glue homogenizing, photoetching and developing, and then performing negative ion injection or surface implantation by adopting ICP, RIE or an ion implanter;
s4, activating the injected negative ions by a heat treatment method, and then depositing a dielectric layer on the surface of the barrier layer by PECVD, ALD or LPCVD methods for surface passivation, wherein the material of the dielectric layer is SiO2、Si3N4、AlN、Ga2O3、Al2O3、TiO2Any one or any combination thereof;
s5, defining main electrode and sensing electrode areas by using a photoetching method, forming an electrode deposition window by gluing, glue homogenizing, photoetching and developing, growing a single-layer or composite metal film by adopting an electron beam evaporation method, a magnetron sputtering method or a thermal evaporation method to form a contact electrode, and then forming metal/semiconductor ohmic contact by metal stripping, cleaning and annealing;
the surface of the barrier layer is provided with 3 main electrodes C0、C1And C2Said main electrode C1And C2With respect to C0Central symmetry, said electrode C0And C1Middle and electrode C0And C2Between which a negative ion implantation region is arranged, the width of the negative ion implantation region is less than that of the main electrode C0And C1Or C0And C2With respect to the main electrode C, two negative ion implantation regions0Centrosymmetric, and respectively manufacturing sensing electrodes S on the surfaces of the two negative ion implantation regions1And S2Sense electrode S1And S2With respect to main electrode C0And (4) the center is symmetrical.
2. The method as claimed in claim 1, wherein in step S3, the negative ions are selected from fluorine ions, oxygen ions, nitrogen ions, sulfur ions, and phosphorus ions.
3. The method for manufacturing a two-dimensional electron air channel semi-depletion type hall sensor according to claim 1, wherein the processing in step S3 adopts a low power ion implantation process of 10W to 100W.
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| CN108649117A (en) | 2018-10-12 |
| CN110335939A (en) | 2019-10-15 |
| CN110335939B (en) | 2021-05-04 |
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