CN115683400A - High-sensitivity pressure sensor based on composite nitride and magnetostrictive material structure, signal acquisition module and circuit system - Google Patents
High-sensitivity pressure sensor based on composite nitride and magnetostrictive material structure, signal acquisition module and circuit system Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 45
- 150000004767 nitrides Chemical class 0.000 title claims description 24
- 239000002131 composite material Substances 0.000 title claims description 17
- 230000004888 barrier function Effects 0.000 claims abstract description 28
- 230000035945 sensitivity Effects 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 230000005533 two-dimensional electron gas Effects 0.000 claims abstract description 7
- -1 compound nitride Chemical class 0.000 claims abstract 3
- 230000003321 amplification Effects 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 14
- 229910002601 GaN Inorganic materials 0.000 claims description 13
- 230000010287 polarization Effects 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 3
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 229910000859 α-Fe Inorganic materials 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 31
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 230000004044 response Effects 0.000 abstract description 7
- 230000010354 integration Effects 0.000 abstract description 5
- 238000005303 weighing Methods 0.000 abstract description 4
- 230000036772 blood pressure Effects 0.000 abstract description 3
- 238000012544 monitoring process Methods 0.000 abstract description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 3
- 238000005530 etching Methods 0.000 description 25
- 238000000151 deposition Methods 0.000 description 14
- 238000001755 magnetron sputter deposition Methods 0.000 description 12
- 230000008859 change Effects 0.000 description 11
- 238000001259 photo etching Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 9
- 230000008021 deposition Effects 0.000 description 8
- 238000005566 electron beam evaporation Methods 0.000 description 7
- 238000002161 passivation Methods 0.000 description 7
- 229910002704 AlGaN Inorganic materials 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 6
- 238000001514 detection method Methods 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000009616 inductively coupled plasma Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 238000002207 thermal evaporation Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000004151 rapid thermal annealing Methods 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910001329 Terfenol-D Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910052774 Proactinium Inorganic materials 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000005690 magnetoelectric effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- XOFYZVNMUHMLCC-ZPOLXVRWSA-N prednisone Chemical compound O=C1C=C[C@]2(C)[C@H]3C(=O)C[C@](C)([C@@](CC4)(O)C(=O)CO)[C@@H]4[C@@H]3CCC2=C1 XOFYZVNMUHMLCC-ZPOLXVRWSA-N 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 230000005428 wave function Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
High sensitivity pressure sensor, signal acquisition module and circuit system based on compound nitride and magnetostrictive material structure belong to the semiconductor sensor field. The method comprises the following steps that a buffer layer, a channel layer and a barrier layer are sequentially grown on a substrate, the channel layer and the barrier layer form a heterojunction, a contact interface of the channel layer and the barrier layer generates two-dimensional electron gas, and a magnetostrictive layer and a dielectric layer are sequentially arranged above the barrier layer; the source electrode and the drain electrode are arranged on two sides of the barrier layer and are respectively contacted with the magnetostrictive layer and the dielectric layer, and the grid electrode is arranged on the dielectric layer; the manufactured high-sensitivity pressure sensor forms a Wheatstone bridge for signal acquisition, the bridge is connected with a circuit system, and the display pressure is displayed on a display screen. The invention effectively improves the pressure sensitivity, has small volume, high integration level, large measuring range and high response speed, can be used for manufacturing a sensor array to realize two-dimensional or three-dimensional pressure sensing, and is expected to be applied to the fields of medical blood pressure, petrochemical industry, industrial electronic weighing, river water level monitoring and the like in the future.
Description
Technical Field
The invention belongs to the field of semiconductor sensors, and particularly relates to a high-sensitivity pressure sensor instrument based on a composite nitride and magnetostrictive material structure.
Background
The pressure sensor is a device or a device which senses pressure signals and converts the input pressure signals into output electric signals according to rules, and is widely applied to the fields of medical blood pressure, petrochemical industry, industrial electronic weighing and river water level monitoring. The existing pressure sensors mainly comprise a piezoresistive pressure sensor, a piezoelectric pressure sensor and a capacitance pressure sensor. The piezoresistive pressure sensor utilizes the piezoresistive effect of metal or semiconductor material, the chip resistance changes after being pressed, the bridge loses balance, and a constant current source is added to the bridge to output a corresponding electric signal. The semiconductor processing technology of the sensor is complex, extra heating degree compensation measures are needed to inhibit zero drift, and the requirement of small temperature drift in the petrochemical industry cannot be met. The piezoelectric pressure sensor measures the pressure value through the electrode difference generated at two ends of a piezoelectric material after being pressed, the static pressure cannot be measured due to the fact that the charge quantity in the piezoelectric effect cannot be stored, the dynamic response capability is poor, and the requirement of the electronic weighing static pressure in the market cannot be met. After the capacitive pressure sensor is pressed, the capacitance difference between the film electrode and the fixed electrode is converted into a voltage signal, the influence of parasitic capacitance is large, and the processing is difficult to ensure the symmetry. Therefore, the problem that the pressure sensor is small in size, easy to process, high in sensitivity, capable of measuring both static pressure and dynamic pressure and high in response speed is needed to be solved urgently.
Compared with the traditional second generation Si and GaAs semiconductor, the GaN third generation semiconductor material has the forbidden band width of 3.45eV, the critical breakdown electric field of more than 3MV/cm and the electron saturation migration velocity of 2 multiplied by 10 7 cm/s and the like. Due to spontaneous polarization and piezoelectric polarization, high-density two-dimensional electron gas (2 DEG) is generated at the AlGaN/GaN heterojunction interface under the condition of unintentional doping, and the electron mobility of a conductive channel reaches 2000cm 2 /(V · S). Two-dimensional electron gas to external gas and magnetismThe physical quantities such as fields, phonons, heat and the like are sensitive to reaction, and the pressure source can also cause the concentration of the two-dimensional electron gas to change, and even a small pressure can cause the concentration of the two-dimensional electron gas to change greatly.
The giant magnetostrictive material has high compressive strength and short response time; the electromechanical coupling coefficient is up to 70 percent and is far higher than 40 percent of piezoelectric ceramic PZT in the electrostrictive material; the magnetostriction coefficient is large (about dozens of times of Fe and Ni), and the generated strain is 15 to 30 times higher than that of the piezoelectric ceramic PZT material of the electrostriction material; the material has a delta E effect (strain enables the magnetic conductivity and the stress state of the magnetostrictive material to change, and the Young modulus is not constant), can be changed by an external magnetic field, pressure, temperature and prestress, and is suitable for various extremely severe environments; the Curie temperature is above 300 ℃, and the pressure sensor can still stably work at a high temperature of 200 ℃ when being manufactured; there is no deterioration of performance due to aging after long-term use. Terfenol-D (TbDyFe) is taken as a representative of rare earth giant magnetostrictive materials, and the strain value generated by the Terfenol-D under the drive of a low magnetic field reaches 1500-2000 ppm, which is 5-8 times that of the traditional magnetostrictive material piezoelectric ceramic and 40-50 times that of a nickel-based material. The response speed of the magnetostriction coefficient along with the change of the magnetic field is very high and reaches 10 -6 And s. And has soft magnetic properties, namely low remanence and coercive force.
The device formed by the nitride material has tensile stress in the material, a magnetoelectric effect is generated when the nitride and the magnetostrictive material are combined, the magnetostrictive layer generates magnetostriction (namely magnetostriction coefficient) under the action of a magnetic field, so that the barrier layer of the nitride heterojunction is further deformed, the repetition rate of the basic wave function of electrons and holes is greatly improved after the barrier layer is transmitted to the channel layer, the recombination probability of the two is increased, the integral polarization intensity is changed, the concentration of 2DEG is greatly changed, and the performance of the pressure sensor device is improved. Therefore, the 2DEG is more sensitive to strain caused by pressure at this time, and the sensitivity is greatly increased. Therefore, the invention provides a high-sensitivity pressure sensor based on a composite nitride and magnetostrictive material structure.
Most piezoresistive pressure sensors, piezoelectric pressure sensors and capacitive pressure sensors in the market need a plurality of power supplies for power supply, are large in size, difficult to process, slow in response speed and poor in sensitivity. The traditional passive pressure sensor made of giant magnetostrictive materials works by utilizing the principle that a Wheatstone bridge converts deformation change of a magnetostrictive rod after pressure change into voltage signal output, and the upper permanent magnet, the lower permanent magnet and the trapezoidal yoke structure do not need an additional power supply, but have the advantages of low sensitivity, large size, wide occupied area, large influence of temperature, influence of parasitic capacitance effect and poor repeatability.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a high-sensitivity pressure sensor which has the advantages of small volume, easy processing and integration, high sensitivity, large measuring range, high response speed and a composite material structure.
The technical scheme is as follows:
a high sensitivity pressure sensor based on a composite nitride and magnetostrictive material structure, comprising: the device comprises a substrate, a buffer layer, a channel layer, a barrier layer, a magnetostrictive layer, a dielectric layer, a source electrode, a drain electrode and a grid electrode, wherein the buffer layer, the channel layer and the barrier layer are sequentially grown on the substrate, the channel layer and the barrier layer form a heterojunction structure, a contact interface of the channel layer and the barrier layer is induced by polarized charges to generate two-dimensional electron gas, and the magnetostrictive layer and the dielectric layer are sequentially arranged above the barrier layer;
the source electrode and the drain electrode are arranged on two sides of the barrier layer, the source electrode and the drain electrode are respectively in contact with the magnetostrictive layer and the dielectric layer, and the grid electrode is arranged on the dielectric layer.
Further, the substrate is any one of silicon, sapphire, silicon carbide, gallium nitride, gallium oxide and diamond materials.
Further, the buffer layer is any one of AlN, gaN, and AlGaN.
Further, the channel layer is made of GaN or GaAs.
Further, the barrier layer is any one of AlN, alGaN, and AlGaAs.
Further, the magnetostrictive layer is any one of Fe, tbDyFe, feGaB, smPrFe and ferrite.
Furthermore, the source electrode and the drain electrode are in ohmic contact with a composite metal structure, and the grid electrode is in Schottky contact or a metal/medium/semiconductor structure.
The invention also comprises a signal acquisition module based on the high-sensitivity pressure sensor, wherein the high-sensitivity pressure sensor R based on the composite nitride and magnetostrictive material structure is arranged on four bridge arms of a Wheatstone bridge circuit 1 、R 2 、R 3 、R 4 。
Further, the device also comprises a potentiometer r for balancing the bridge, wherein the potentiometer r is connected with the pressure sensor in parallel; the sensor for generating deformation of the bridge in an unbalanced state after being pressed is R 1 、R 2 、R 3 、R 4 Or diagonally opposite two.
The invention also includes a high sensitivity pressure sensor based circuitry comprising: the pressure sensor comprises a signal amplification module, a power supply module, a data interface module, a singlechip main control module and any high-sensitivity pressure sensor signal acquisition module, wherein the signal acquisition module is connected with the signal amplification module, the power supply module is respectively connected with the signal acquisition module, the signal amplification module and the data interface module, and the singlechip main control module is connected with the data interface module.
The beneficial effects of the invention are:
the high-sensitivity pressure sensor, the signal acquisition module and the circuit system based on the composite nitride and magnetostrictive material structure have the advantages that the magnetostrictive strain is transmitted to the heterojunction barrier layer, the piezoelectric polarization strength is changed to a greater extent, and the 2DEG concentration is changed greatly, so that the high-concentration 2DEG is more sensitive to the external pressure to be measured, and the pressure sensitivity is effectively improved; meanwhile, the magnetostrictive film and the III-IV nitride heterojunction are directly combined, so that the problem that a magnetostrictive rod-shaped material in the traditional magnetostrictive pressure sensor is large in size is solved, the miniaturized pressure sensor is small in size and high in integration level, a sensor array can be manufactured, two-dimensional or three-dimensional pressure sensing is realized, and the sensor is expected to be applied to the fields of medical blood pressure, petrifaction, industrial electronic weighing, river water level monitoring and the like in the future.
The technical scheme of the high-sensitivity pressure sensor based on the combination of the III-V nitride heterojunction and the magnetostrictive material provided by the invention has the characteristics that: 1) The integration level is high: the composite structure of the nitride heterojunction semiconductor and the magnetostrictive film is used as a sensitive material, so that the manufactured planar device has small volume and high integration level, can be used for manufacturing an array device, and realizes two-dimensional or three-dimensional pressure detection; 2) The measuring range is large: the detection type comprises compression type pressure and stretching type pressure, and the detection pressure can be more than +/-100 kPa; 3) The sensitivity is high: the strain generated by the magnetostrictive material under a low magnetic field is large, and the transmission of the magnetostrictive strain to the heterojunction interface changes the energy band bending caused by the piezoelectric polarization of the channel layer to a greater extent, so that the 2DEG is more sensitive to the magnetostrictive strain caused by pressure and the magnetic field.
The key point of the invention is sensor innovation, preparation technology and structural device design. In order to improve the pressure range and sensitivity of measurement, the key point of the invention is that the magnetostrictive film and the III-IV nitride heterojunction are combined together, and the outside pressure is more sensitive to the 2DEG concentration change on the basis of the magnetic strain, thereby effectively improving the sensitivity of the pressure sensor. The Wheatstone bridge is utilized to convert the change of the strain current into a voltage signal to be output, and the pressure is displayed visually through the singlechip. The scheme greatly reduces the size of the traditional magnetostrictive pressure sensor, obviously improves the sensitivity and has wider detection pressure range.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the present invention will be described in detail with reference to the accompanying drawings and detailed embodiments, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without inventive exercise. Wherein:
FIG. 1 is a system block diagram of a circuit arrangement according to the present invention;
FIG. 2 is a schematic cross-sectional view of a high-sensitivity pressure sensor according to the present invention;
FIG. 3 is a schematic process flow diagram of an embodiment of the present invention;
FIG. 4 is a schematic circuit diagram of a signal acquisition and signal amplification module according to the present invention;
FIG. 5 is a schematic circuit diagram of a power module according to the present invention;
FIG. 6 is a schematic circuit diagram of a data interface module according to the present invention;
FIG. 7 is a schematic circuit diagram of a main control module of an STM32 single chip microcomputer in the application of the present invention;
FIG. 8 is a diagram illustrating the experimental results of the relationship between pressure and magnetostriction coefficient and output voltage according to the present invention;
FIG. 9 is a schematic diagram of the testing of the Wheatstone 1/4 bridge and half bridge.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and do not limit the invention.
The high-sensitivity pressure sensor, the signal acquisition module and the circuit system based on the composite nitride and magnetostrictive material structure will be further described with reference to fig. 1-9.
Example 1
The test process of the sensor device provided by the invention is as follows:
1) Manufacturing a pressure sensor device of III-IV group nitride combined with magnetostrictive materials by a process; 2) After current is supplied to the excitation coil, a bias magnetic field parallel to the surface of the sensor device is generated, the lead is connected with a pressure source and the device, and the sensor device generates magnetic strain under the action of the magnetic field and the pressure; 3) The USB interface is connected to a computer PC, the PC imports a program containing set values of pressure, magnetic field intensity, magnetostriction coefficient, voltage magnitude and duration, the set values of the voltage magnitude and the duration can be a range value, the main control chip calibrates and compensates the detected pressure magnitude and output voltage detected and the imported set values of the voltage magnitude and the voltage, and the pressure and the corresponding output voltage value are displayed on a 0LED display screen.
In one example of the invention, the circuit system comprises a signal acquisition module, a signal amplification module, a power supply module, a data interface module and an STM32 singlechip main control module. The signal acquisition module adopts a Wheatstone 1/4 bridge in the graph 4 to convert the pressure change into the voltage change; the signal amplification module processes signals mainly by using the AD620 in FIG. 4, and comprises filtering and amplification, wherein the amplification factor is controlled by adjusting an external gain control resistor R of the AD620 g To set, set R g Amplifying the signal by 10 times for 5K Ω; the power supply module adopts USB5V power supply in FIG. 5, converts 5V voltage into 3.3V voltage through the voltage reduction chip TPS73633 and supplies power for the main control chip and the serial port program downloading circuit; meanwhile, an LM2663 negative pressure conversion chip is adopted to convert the 5V voltage into a-5V voltage, so that negative pressure power supply is provided for the signal amplification circuit; the data interface module adopts a one-key downloading circuit and a USB-to-serial port unit CH340C in FIG. 6; the model of the STM32 singlechip master control module adopts STM32F103RCT6 in FIG. 7 as a master control chip, and the STM32 singlechip master control module comprises a crystal oscillator circuit, a data storage FLASH and EEPROM, keys BOOT and Key, a RESET circuit RESET and an OLED display contact pin, and the master control module converts amplified analog signals into digital signals through AD conversion to carry out OLED display, thereby completing the detection of pressure.
The target device implementation process of the present patent application:
1) And (3) epitaxial growth: epitaxial growth of AlG on 2-inch silicon substrate by Metal Organic Chemical Vapor Deposition (MOCVD)aN aN/GaN heterojunction structure and aN AlN buffer layer, wherein the epitaxial layer is sequentially provided with aN AlN buffer layer with the thickness of 2nm, a 4 mu mGaN channel layer and Al with the thickness of 25nm from bottom to top 0.25 Ga 0.75 An N barrier layer. Preparing a 810nm magnetostrictive film above the heterojunction by a radio frequency magnetron sputtering method, wherein the sputtering power is 50-300W, and Ar is sputtered 2 The air pressure is 1 to 1.5Pa, and the temperature is 400 to 475 ℃ O after the film preparation is finished 2 Annealing for 1-3 h in the atmosphere.
2) Isolating the table top: etching the epitaxially grown sample by Reactive Ion Etching (RIE) after photolithography, and adding Cl 2 The flow is controlled to be 20sccm, the pressure of the cavity is 10mTorr, the etching power is 50W, the etching time is 2.5min, and the etching depth of a two-step method combining conventional power etching and low-power etching is 120nm so as to completely separate the conductive channel.
3) And (3) grid etching: after photoetching and developing of the sample, adopting Inductively Coupled Plasma (ICP), and utilizing Cl-based gas to etch the grid region to the depth of 800nm, optimizing parameters of an etching process and reducing etching damage.
4) Manufacturing source and drain ohmic contact: after photolithographic development, a Ti/Al/Ni/Au (22/140/55/45 nm) four-layer alloy structure is deposited by electron beam evaporation, and ohmic contact is formed by Rapid Thermal Annealing (RTA) for 20s at 850 ℃ in nitrogen.
5) Depositing a dielectric layer: deposition at 200 ℃ for 1h using Atomic Layer Deposition (ALD) to generate 20nm Al 2 O 3 。
6) Preparing a gate electrode: after the photolithographic development, an electron beam evaporation was used to deposit a gate electrode Ag (100 nm) with a distance of 4 μm and a width of 900 μm between the drain and gate electrodes.
7) Deposition of passivation layer and opening of electrode window: deposition of 300nm SiO by PECVD 2 And (4) opening a hole to expose the electrode contact metal by utilizing an ICP (inductively coupled plasma) etching technology after photoetching of the passivation layer, and then depositing 400nm of Al by magnetron sputtering to form a lead at the electrode to manufacture a bonding pad.
Example 2
The test procedure was the same as in example 1. A high-sensitivity pressure sensor combined with III-IV group nitride magnetostrictive material TbDyFe sequentially grows a buffer layer, a GaN layer, an AlGaN barrier layer and a T layer on a silicon substratebDyFe magnetostrictive layer, al 2 O 3 And a gate dielectric layer, wherein a source electrode and a drain electrode are arranged on two sides of the dielectric layer, and the distance between the drain electrode and the gate electrode is 4 μm.
The implementation process of the target device of the patent application is described as follows:
1) Substrate preparation: a 2-inch Si substrate material was prepared, ultrasonic cleaning was performed for 2 minutes in acetone (MOS grade), boiling was performed for 10 minutes in a positive resist stripping liquid at 60 ℃, ultrasonic cleaning was performed for 3 minutes each for the sample in acetone and ethanol, and the following steps were performed using HF: h 2 O =1 2 And (5) drying.
2) And (3) epitaxial growth: epitaxially growing AlGaN/GaN heterojunction structure, buffer layer AlN and magnetostrictive layer TbDyFe by using metal organic compound chemical vapor deposition (MOCVD) method and magnetron sputtering method, wherein the channel layer is unintentionally doped with GaN with the thickness of 4 mu m, and the barrier layer Al 0.25 Ga 0.75 The thickness of N is 25nm, and the thickness of the buffer layer is AlN 2nm. Tb with thickness of 810nm is prepared above heterojunction by adopting radio frequency magnetron sputtering method 0.3 Dy 0.7 Fe 1.9 The film comprises 99.9% Tb-Dy-Fe alloy target (Tb: dy: fe =0.3 2 Air pressure 1Pa, target spacing 60mm, background vacuum degree 1.5X 10 -5 Pa, O at 475 ℃ after film preparation 2 And carrying out thermal annealing for 3h in the atmosphere.
3) Isolating the table top: etching the epitaxially grown sample by Reactive Ion Etching (RIE) after photoetching, and adding Cl 2 The flow is controlled to be 15sccm, the pressure of the cavity is 10mTorr, the etching power is 50W, the etching time is 2.5min, and the etching depth of a two-step method combining conventional power etching and low-power etching is 120nm so as to completely separate the conductive channel.
4) And (3) grid etching: after photoetching and developing of the sample, adopting Inductively Coupled Plasma (ICP), and utilizing Cl-based gas to etch the grid region to a depth of 800nm, optimizing parameters of an etching process and reducing etching damage.
5) Manufacturing source and drain ohmic contact: after photolithographic development, a Ti/Al/Ni/Au (22/140/55/45 nm) four-layer alloy structure is deposited by electron beam evaporation, and ohmic contact is formed by Rapid Thermal Annealing (RTA) for 30s in nitrogen at 830 ℃.
6) Depositing a dielectric layer: deposition at 200 ℃ for 1h using Atomic Layer Deposition (ALD) to form 20nm of Al 2 O 3 。
7) Preparing a gate electrode: the gate electrode Ag (100 nm) was electron beam evaporation deposited, the distance between the drain electrode and the gate electrode being 4 μm and the width being 500. Mu.m.
8) Deposition of passivation layer and opening of electrode window: depositing 400nm SiO by PECVD method 2 Etching a passivation layer, opening a hole to etch the gate dielectric layer after photoetching until the electrode contact metal is exposed, coating glue (using AZp4620 positive photoresist), spin-coating (rotating for 600rpm-3s before, then rotating for 1000rmp-20s after, the final photoresist thickness is 1 mu m), photoetching, developing (80 seconds), etching a window at the surface electrode by utilizing ICP etching,
and then magnetron sputtering and depositing 400nm of Al at the lead pad.
FIG. 8 shows the relationship between pressure and magnetostriction coefficient and output voltage of the sensor designed according to the present invention. The pressure range detectable by the device (2.5 mm. Times.2.5 mm) is-70 kPa to 70kPa (the minus sign is the stretching pressure). When the magnetic field is only 0.4T, the magnetostriction coefficient of the sensor is 15.98 multiplied by 10 -6 Under the action of 0.4T magnetic field and 70KPa stretching pressure, the sensor expansion coefficient reaches maximum 312 multiplied by 10 -6 The magnetostriction coefficient is improved by 18.5%, the output voltage is improved by 1.8mV, and the sensitivity reaches 2.13mV/N.
Example 3
In order to further increase the sensitivity of the sensor and the measuring voltage range, the value of the output voltage is increased, and further, the wheatstone 1/4 bridge is changed to a wheatstone half bridge. R in a Wheatstone half-bridge using the principle of converting strain generated by pressure into resistance change of a sensor device 1 、R 3 In order to sense the resistance of the deformation sensor device of the pressure to be measured, the resistance values of the 4 resistors are equal to each other and are R and R in balance 1 And R 3 All the resistance increases of (2) are Δ R. Wherein, the 1 type is Wheatstone 1/4 bridge output voltage formula, the 2 type is Wheatstone half-bridge output voltage formula, the easily obtained Wheatstone half-bridge output voltage is 2 times of the output voltage of the 1/4 bridge, the sensitivity is correspondingThe improvement is 2 times.
Example 4
The technical scheme of the invention is as follows: pressure sensor device R 1 、R 2 、R 3 、R 4 The drain electrode and the source electrode are connected end to form a Wheatstone 1/4 bridge circuit, wherein R 2 、R 3 、R 4 The surface is wrapped with a magnetic shielding line, two ends of a strain resistance lead wire of the pressure sensor are respectively connected with two input lines of a Wheatstone bridge, and the size of the potentiometer is adjusted to balance the bridge. The coil provides a bias magnetic field for the sensor, and the sensor generates strain under the combined action of the magnetic field and pressure. The single chip microcomputer processes the electric signals and then displays the pressure and the corresponding voltage values in the display screen in a one-to-one correspondence mode.
The wheatstone bridge consists of a balanced bridge of 4 pressure sensor resistors, the 4 resistors being balanced when no external force is applied. When the sensor is deformed by an applied pressure, R 1 The resistance changes, the bridge loses balance, and a voltage signal is output at the output end.
The circuit system comprises a signal acquisition module, a signal amplification module, a power supply module, a data interface module and a singlechip main control module. The signal acquisition module and the signal amplification module amplify the voltage signal of the Wheatstone bridge; the power supply module supplies power to the data interface module and the main control module; the data interface module comprises a USB interface and a USB-to-serial port; the single chip microcomputer main control module comprises a main control chip, a storage device, a key, a reset device and a display device, and the pressure and the corresponding voltage are displayed on the OLED display screen according to the calibration values of the pressure and the magnetostriction coefficient after continuous detection.
The schematic structure diagram of the device according to the technical scheme of the invention is shown in fig. 2: the substrate is made of silicon, sapphire, silicon carbide, gallium nitride, gallium oxide and diamond materials, a buffer layer and a III-V group heterojunction structure are epitaxially grown on the substrate, a magnetostrictive layer is prepared by magnetron sputtering, a dielectric layer is deposited on an atomic layer, the buffer layer can be AlN or GaN or AlGaN (the thickness is 10-300 nm), the channel layer is GaN or GaAs (the thickness is 0.1-5 mu m), the barrier layer is AlN or AlGaN or AlGaAs (the thickness is 2-100 nm), the material components in the barrier layer are not limited, the magnetostrictive layer is Fe or TbDyFe or FeGaB or SmPrFe or ferrite (the thickness is 50-900 nm), the source electrode and the drain electrode are in ohmic contact with a composite metal structure, and the gate electrode is in Schottky contact or a metal/dielectric/semiconductor (MIS) structure. The shape of the electrode is not particularly limited, and may be rectangular, circular, or the like. The device preparation method provided by the invention comprises the following steps:
1) Substrate preparation: preparing a substrate, cleaning the substrate material, and removing contaminants on the surface of the substrate.
2) And (3) epitaxial growth: the method comprises the steps of utilizing Metal Organic Chemical Vapor Deposition (MOCVD), molecular Beam Epitaxy (MBE), hydride Vapor Phase Epitaxy (HVPE), magnetron sputtering, pulse Laser Deposition (PLD) and Ion Beam Sputtering Deposition (IBSD), epitaxially growing a III-V nitride heterojunction structure, a buffer layer and a magnetostrictive layer in any mode, wherein the thickness of the generated magnetostrictive layer is 50-900 nm, the thickness of a channel layer is 0.1-5 mu m, the thickness of a barrier layer is 2-100 nm, the buffer layer can be an AIN, gaN or superlattice structure, and the thickness is 10-300 nm.
3) Isolating the table top: after photoetching, the device is electrically isolated by adopting a plasma etching or ion implantation or chemical solution wet etching method.
4) And (3) grid etching: and after photoetching, etching the gate magnetostrictive layer by adopting a plasma etching technology, wherein the residual thickness after etching is 5-20 nm.
5) And (3) source and drain ohmic contact manufacturing: after photoetching, growing a plurality of metal laminations by adopting an electron beam evaporation or thermal evaporation or magnetron sputtering method, and forming ohmic contact through high-temperature thermal annealing.
6) Depositing a dielectric layer: and growing the dielectric layer by adopting a chemical vapor deposition method, an atomic layer deposition method, a magnetron sputtering method or a thermal evaporation method.
7) Preparing a gate electrode: and after photoetching, growing a metal thin layer by adopting an electron beam evaporation or thermal evaporation or magnetron sputtering method to form a gate electrode.
8) Deposition of passivation layer and opening of electrode window: growing a medium passivation layer by adopting a chemical vapor deposition or atomic layer deposition or magnetron sputtering or thermal evaporation method, removing the passivation layer in each electrode area by adopting a dry method or a wet method after photoetching, windowing a lead, growing a metal layer by adopting an electron beam evaporation or thermal evaporation or magnetron sputtering method, manufacturing a bonding pad and carrying out lead.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be able to cover the technical solutions and the inventive concepts of the present invention within the technical scope of the present invention.
Claims (10)
1. A high sensitivity pressure sensor based on a composite nitride and magnetostrictive material structure, comprising: the device comprises a substrate, a buffer layer, a channel layer, a barrier layer, a magnetostrictive layer, a dielectric layer, a source electrode, a drain electrode and a grid electrode, and is characterized in that the buffer layer, the channel layer and the barrier layer are sequentially grown on the substrate, the channel layer and the barrier layer form a heterojunction structure, a contact interface of the channel layer and the barrier layer is induced by polarization charges to generate two-dimensional electron gas, and the magnetostrictive layer and the dielectric layer are sequentially arranged above the barrier layer;
the source electrode and the drain electrode are arranged on two sides of the barrier layer and are respectively in contact with the magnetostrictive layer and the dielectric layer, and the grid electrode is arranged on the dielectric layer.
2. A high sensitivity pressure sensor based on composite nitride and magnetostrictive material structure according to claim 1, characterized in that the substrate is any of silicon, sapphire, silicon carbide, gallium nitride, gallium oxide, diamond material.
3. The high sensitivity pressure sensor based on a complex nitride and magnetostrictive material structure according to claim 1, characterized in that the buffer layer is any one of AlN, gaN, alGaN.
4. The compound nitride and magnetostrictive material structure-based high-sensitivity pressure sensor according to claim 1, wherein said channel layer is GaN or GaAs.
5. The high sensitivity pressure sensor based on a composite nitride and magnetostrictive material structure according to claim 1, characterized in that the barrier layer is any one of AlN, alGaN, alGaAs.
6. The composite nitride and magnetostrictive material structure-based high sensitivity pressure sensor as claimed in claim 1, wherein the magnetostrictive layer is any one of Fe, tbDyFe, feGaB, smPrFe, ferrite.
7. The compound nitride and magnetostrictive material structure based high sensitivity pressure sensor as claimed in claim 1, wherein the source and drain are of a compound metal structure ohmic contact and the gate is of a schottky contact or a metal/dielectric/semiconductor structure.
8. A signal acquisition module based on a high-sensitivity pressure sensor is characterized in that the high-sensitivity pressure sensor R based on a composite nitride and magnetostrictive material structure according to any one of claims 1-7 is arranged on four bridge arms of a Wheatstone bridge circuit 1 、R 2 、R 3 、R 4 。
9. The high-sensitivity pressure sensor-based signal acquisition module of claim 8, further comprising a potentiometer r for balancing the bridgeThe potentiometer r is connected with the pressure sensor in parallel; the sensor for generating deformation of the bridge in an unbalanced state after being pressed is R 1 、R 2 、R 3 、R 4 Or diagonally opposite ones.
10. Circuitry based on a high-sensitivity pressure sensor, comprising: the high-sensitivity pressure sensor-based signal acquisition module comprises a signal amplification module, a power supply module, a data interface module, a single chip microcomputer main control module and the high-sensitivity pressure sensor-based signal acquisition module in claims 8 or 9, wherein the signal acquisition module is connected with the signal amplification module, the power supply module is respectively connected with the signal acquisition module, the signal amplification module and the data interface module, and the single chip microcomputer main control module is connected with the data interface module.
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