CN110729396A - Magnetoelectric film sensor with self-amplification capability - Google Patents

Magnetoelectric film sensor with self-amplification capability Download PDF

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CN110729396A
CN110729396A CN201910909812.0A CN201910909812A CN110729396A CN 110729396 A CN110729396 A CN 110729396A CN 201910909812 A CN201910909812 A CN 201910909812A CN 110729396 A CN110729396 A CN 110729396A
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magnetoelectric
magnetostrictive
type semiconductor
piezoelectric
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CN110729396B (en
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张吉涛
李康
张庆芳
陶加贵
武洁
陈冬雨
张培
姜利英
曹玲芝
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Zhengzhou University of Light Industry
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N35/00—Magnetostrictive devices
    • H10N35/101—Magnetostrictive devices with mechanical input and electrical output, e.g. generators, sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N35/00—Magnetostrictive devices
    • H10N35/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N35/00—Magnetostrictive devices
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Abstract

The invention belongs to the technical field of magnetoelectric sensors, and relates to a magnetoelectric film sensor with self-amplification capability, which consists of a multilayer heterostructure formed by compounding a magnetoelectric composite material and an MOS (metal oxide semiconductor) tube and copper coils densely wound on the upper side and the lower side of the multilayer heterostructure, wherein the multilayer heterostructure specifically comprises a substrate layer, an intrinsic layer, n+Type semiconductor layer, p+The piezoelectric device comprises a type semiconductor layer, a first metal contact layer, a second metal contact layer, a first output electrode, a second output electrode, an insulating layer, two magnetostrictive layers and a piezoelectric layer. N in the invention+Type semiconductor layer, p+The type semiconductor layer and the magnetostrictive layer are respectively used as a source electrode, a drain electrode and a grid electrode of the MOS tubeThe change of the grid voltage causes the change of the induced charge quantity of the channel in the MOS tube, which leads to the widening of the conductive channel, at the moment, the MOS tube works in an amplifying (namely a variable resistance region) state from a cut-off state, realizes the self-amplifying function of the magnetoelectric voltage, and can be used for the high-sensitivity detection of a weak magnetic field in the environment with lower signal-to-noise ratio.

Description

Magnetoelectric film sensor with self-amplification capability
The invention belongs to the technical field of magnetoelectric sensors, and relates to a magnetoelectric film sensor with self-amplification capability.
Background
Magnetic field sensors are sensors that are sensitive to magnetic signals or to physical quantities that can be converted into magnetic signals (light, vibration, temperature, etc.), and are the first and most widely used sensors. The high-sensitivity magnetic field sensor mainly comprises a superconducting quantum interferometer magnetometer, an optical magnetic resonance magnetometer, a fluxgate sensor and an optical fiber magnetic field sensor at present, but the high-sensitivity magnetic field sensor generally has the problems of complex device structure, difficult manufacture, large volume, large power consumption, high cost and the like. In view of the many high-sensitivity magnetic field sensors that are currently being developed, the above problems have not been solved well. The traditional magnetic field sensing device is limited by the self property, structure, manufacturing process and other factors of the material, so that the detection sensitivity of the traditional magnetic field sensing device can hardly reach an expected value. With the development of Micro-Electro-mechanical Systems (MEMS) microelectronic technology, the microelectronic technology can be applied to magnetoelectric composite materials, so that the magnetoelectric coupling effect can be effectively improved, and the characteristics of miniaturization, high sensitivity and the like of devices can be simultaneously met. For example, the patent of invention with the publication number of CN 1912646B discloses a micro-MEMS high-sensitivity magnetic field sensor, which combines the fabrication of micro-magnetic sensitive structure by using MEMS technology with the detection of optically sensitive signals, so as to achieve the goal of a micro-high-sensitivity magnetic field sensor with small volume, low power consumption and low cost, which can be widely applied in various fields.
The sensor made of the magnetoelectric composite material has the following principle: under a certain alternating current magnetic field/direct current bias magnetic field, the magnetostrictive phase generates strain, the strain is transmitted to the piezoelectric phase, and alternating/direct current voltage (current) is generated according to the piezoelectric effect. The magnetoelectric coefficient is an important index for measuring the magnetoelectric effect, and the higher the magnetoelectric coefficient is, the higher the sensitivity of the magnetoelectric sensor is. The magnetoelectric effect refers to the phenomenon that a material generates electric polarization under the action of an external magnetic field or generates induced magnetization under the action of an external electric field. People firstly find the magnetoelectric effect in a single-phase material, but the magnetoelectric effect is very small under the condition of normal temperature, and then people find that the magnetoelectric effect of a multi-phase material is stronger than that of a single-phase material, and the magnetoelectric coupling effect of a laminated piezomagnetic/piezoelectric composite magnetoelectric composite material is more prominent. In recent years, with the continuous development of magnetoelectric composite materials, the application of magnetoelectric composite materials is more and more extensive.
A MOS semiconductor device is a semiconductor device that controls the magnitude of current using the electric field effect. The MOS semiconductor device has the advantages of small volume, light weight, low power consumption, long service life, high input impedance, low noise, good thermal stability, strong radiation resistance, simple manufacturing process and the like, thereby having wide application range. As one of MOS power semiconductor devices, the MOS power semiconductor device has become a mainstream of the development of the current power device, and in the MOS power semiconductor device, breakdown voltage becomes a performance index for measuring the MOS power semiconductor device. For example, patent publication No. CN 103426926B discloses a semiconductor structure, which has a sige-sn layer formed on the surface of a sige layer, wherein the sige-sn layer can provide a greater stress than the sige layer and the si layer, thereby improving carrier mobility in the semiconductor structure and the PMOS transistor.
However, to date, the combination of a MOS semiconductor and a sensor to form a composite magnetic sensor with self-amplifying capability has not been reported.
Disclosure of Invention
The invention aims to provide a magnetoelectric film sensor with self-amplification capability, which improves the sensitivity of the magnetoelectric sensor and solves the problem that a weak magnetic field is difficult to detect.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention provides a magnetoelectric film sensor with self-amplification capability, which consists of a multilayer heterostructure consisting of a magnetoelectric composite layer and an MOS (metal oxide semiconductor) tube and coils densely wound on the upper side and the lower side of the multilayer heterostructure, wherein the multilayer heterostructure specifically comprises a substrate layer, an intrinsic layer and n+Type semiconductor layer, p+The piezoelectric thin film transistor comprises a type semiconductor layer, a first metal contact layer, a second metal contact layer, a first output electrode, a second output electrode, an insulating layer, two magnetostrictive layers and a piezoelectric layer;
n is+Type semiconductor layer and p+The type semiconductor layers are respectively used as a source electrode and a drain electrode of the MOS tube, the two magnetostrictive layers are positioned on the upper side and the lower side of the piezoelectric layer, the magnetostrictive layer on the upper side of the piezoelectric layer is slightly shorter than the magnetostrictive layer on the lower side of the piezoelectric layer, the magnetostrictive layer on the lower side of the piezoelectric layer is used as a grid electrode of the MOS tube, and meanwhile, the piezoelectric layer and the magnetostrictive layers on the upper side and the lower side of the piezoelectric layer jointly form a magnetic sensitive end of the magnetoelectric film sensor to provide voltage for the MOS tube;
the intrinsic layer is located on the substrate layer, n+Type semiconductor layer and p+The type semiconductor layers are respectively arranged at the upper left side and the upper right side of the intrinsic layer, and the first metal contact layer and the second metal contact layer are respectively arranged at the n+Type semiconductor layer and p+The first output electrode and the second output electrode are respectively positioned on the first metal contact layer and the second metal contact layer; the insulating layer is positioned above the intrinsic layer, and a part of the magnetostrictive layer 10 on the lower side of the piezoelectric layer 11 is positioned in the insulating layer 9; the coil 12 is wound around the magnetostrictive layer 10 and the substrate layer 1 on the upper side of the piezoelectric layer 11.
Preferably, the substrate layer is monocrystalline silicon and the intrinsic layer is Ge in a relaxed state0.94Sn0.06N is said n+The type semiconductor layer is Ge doped with boron ions0.94Sn0.06Said p is+The type semiconductor layer is doped with phosphorus ionsGe of (2)0.94Sn0.06。
Preferably, the piezoelectric layer is made of quartz single crystal, and the crystal orientation of the piezoelectric layer is; the magnetostrictive layer is made of Ni-Fe-Cr constant elastic alloy.
Preferably, the first metal contact layer and the second metal contact layer are both made of nickel, the first output electrode and the second output electrode are both made of silver, and the insulating layer is made of SiO2The material of the wire layer is silver.
Preferably, the length of the intrinsic layer is 2 times the length of the piezoelectric layer.
The principle that the magnetoelectric film sensor has self-amplification capability is as follows: a magnetostrictive layer as a gate on the lower side of the piezoelectric layer, an insulating layer, and n+Type semiconductor layer (source electrode) and p+The piezoelectric layer and the magnetostrictive layers on the upper side and the lower side of the piezoelectric layer jointly form a magnetic sensitive end of the sensor to provide voltage for the MOS tube, the magnetoelectric voltage output of the magnetoelectric composite layer is communicated with the input end of a grid electrode-source electrode of the MOS tube, and the source electrode-drain electrode of the MOS tube is used as the output of the sensor. When a coil outside a multilayer heterostructure consisting of a magnetoelectric composite layer of the sensor and the MOS tube generates an alternating current magnetic field, the magnetostrictive layer generates mechanical strain (stress) due to the magnetostrictive effect, and the piezoelectric layer is stretched to generate magnetoelectric voltage through interlayer strain transfer (at the moment, the magnetoelectric voltage is weaker in a zero bias magnetic field and is smaller than the gate valve voltage of the MOS tubeV gs The MOS tube has narrow conducting channel, gate-source electrode conducting channel is in pinch-off state, and the MOS tube is in cut-off state), and the mechanical strain (stress) generated by magnetostriction effect reduces the band gap of the intrinsic layer through interlayer transfer, thereby improving the electron transfer capability of the intrinsic layer and reducing the gate valve voltage of the MOS tubeV gs Therefore, the MOS tube can easily enter the variable resistance region, and the MOS tube has amplification capability. The drain current is adjusted by controlling the grid voltage of the MOS tube, namely the grid voltage serving as a unilateral electrode is increased when a weak magnetic field exists outside the sensor, so that the quantity of electric charges induced in a conduction channel of the MOS tube is increased, and the conduction is realizedThe channel is widened, the potential barrier in the conductive channel is reduced, and the MOS tube is in a cut-off state to an amplification state, so that the magnetoelectric voltage self-amplification function is realized, and the high-sensitivity weak magnetic field detection device can be used for high-sensitivity detection of a weak magnetic field in a low signal-to-noise ratio environment.
Compared with the prior art, the invention has the beneficial effects that:
the novel magnetoelectric sensor is manufactured by utilizing the amplification principle of an insulated gate field effect transistor (MOS transistor), an alternating current magnetic field with certain frequency is generated by a coil, the response magnetoelectric voltage does not reach the gate valve voltage of the MOS transistor, the conducting channel of the MOS transistor is narrow, the gate-source conducting channel is in a pinch-off state, and the MOS transistor works in a cut-off state; when a weak magnetic field (alternating current/direct current magnetic field) exists outside the sensor, the response magnetoelectric voltage is greater than the gate valve voltage of the MOS tubeV gs The induction charge of the conductive channel in the MOS tube is increased, so that the conductive channel is widened, the MOS tube works in an amplifying state, and the output signal of the magnetoelectric composite layer can be amplified in multiples, thereby improving the magnetoelectric coefficient and improving the magnetic field detection sensitivity of the sensor.
Drawings
Fig. 1 is a schematic processing diagram of step 1 in the processing method of embodiment 1 of the magnetoelectric thin film sensor according to the present invention.
Fig. 2 is a schematic processing diagram of step 2 in the processing method of embodiment 1 of the magnetoelectric thin film sensor according to the present invention.
Fig. 3 is a schematic processing diagram of step 3 in the processing method of embodiment 1 of the magnetoelectric thin film sensor according to the present invention.
Fig. 4 is a schematic processing diagram of step 4 in the processing method of embodiment 1 of the magnetoelectric thin film sensor according to the present invention.
Fig. 5 is a schematic processing diagram of step 5 in the processing method of embodiment 1 of the magnetoelectric thin film sensor according to the present invention.
Fig. 6 is a schematic processing diagram of step 6 in the processing method of embodiment 1 of the magnetoelectric thin film sensor according to the present invention.
Fig. 7 is a schematic processing diagram of step 7 in the processing method of embodiment 1 of the magnetoelectric thin film sensor according to the present invention.
In the drawings, the reference numbers: 1 is a substrate layer, 2 is an intrinsic layer, and 3 is n+Type semiconductor layer, 4 is p+The semiconductor layer comprises a type semiconductor layer, 5 is a first metal contact layer, 6 is a second metal contact layer, 7 is a first output electrode, 8 is a second output electrode, 9 is an insulating layer, 10 is a magnetostrictive layer, 11 is a piezoelectric layer, and 12 is a coil.
Detailed Description
The following examples are intended to illustrate the invention, but are not intended to limit the scope of the invention. Unless otherwise specified, the technical means used in the examples are conventional means well known to those skilled in the art. The test methods in the following examples are conventional methods unless otherwise specified.
Example one
The magnetoelectric film sensor comprises a multilayer heterostructure consisting of a magnetoelectric composite layer and an MOS (metal oxide semiconductor) tube and coils 12 densely wound on the upper side and the lower side of the multilayer heterostructure, wherein the multilayer heterostructure specifically comprises a substrate layer 1, an intrinsic layer 2 and n+ Type semiconductor layer 3, p+The thin film transistor comprises a type semiconductor layer 4, a first metal contact layer 5, a second metal contact layer 6, a first output electrode 7, a second output electrode 8, an insulating layer 9, two magnetostrictive layers 10 and a piezoelectric layer 11;
n is+ Type semiconductor layers 3 and p+The type semiconductor layer 4 is respectively used as a source (source) and a Drain (Drain) of the MOS tube, the two magnetostrictive layers 10 are positioned on the upper side and the lower side of the piezoelectric layer 11, the magnetostrictive layer 10 on the upper side of the piezoelectric layer 11 is slightly shorter than the magnetostrictive layer 10 on the lower side of the piezoelectric layer 11, the magnetostrictive layer 10 on the lower side of the piezoelectric layer 11 is used as a grid (Gate) of the MOS tube, and the piezoelectric layer 11 is used as an output port of the magnetoelectric composite heterostructure;
the intrinsic layer 2 is located on the substrate layer 1, n+ Type semiconductor layers 3 and p+The type semiconductor layer 4 is respectively positioned at the upper left side and the upper right side of the intrinsic layer 2, and the first metal contact layer 5 and the second metal contact layer 6 are respectively positioned at n+ Type semiconductor layers 3 and p+The first output electrode 7 and the second output electrode 8 are respectively positioned on the first metal contact layer 5 and the second metal contact layer 6; the insulating layer 9 is intrinsicAbove the layer 2, a part of the magnetostrictive layer 10 below the piezoelectric layer 11 is placed in the insulating layer 9; the coil 12 is wound around the magnetostrictive layer 10 and the substrate layer 1 on the upper side of the piezoelectric layer 11.
The substrate layer 1 is monocrystalline silicon, and the intrinsic layer 2 is Ge in a relaxed state0.94Sn0.06N is said n+The type semiconductor layer 3 is Ge doped with boron ions0.94Sn0.06Said p is+The type semiconductor layer 4 is Ge doped with phosphorus ions0.94Sn0.06。
The piezoelectric layer 11 is made of quartz single crystal, and the crystal direction of the piezoelectric layer is; the magnetostrictive layer 10 is made of Ni-Fe-Cr constant elastic alloy.
The first metal contact layer 5 and the second metal contact layer 6 are both made of nickel, the first output electrode 7 and the second output electrode 8 are both made of silver, and the insulating layer 9 is made of SiO2The coil 12 is a copper coil. The length of the intrinsic layer 2 is 2 times the length of the piezoelectric layer 11.
The intrinsic layer 2 is Ge in relaxed state0.94Sn0.06When the sensor works, the magnetoelectric composite layer can generate mechanical strain (stress) due to the magnetoelectric coupling effect, and the mechanical strain (stress) is reduced to ensure that Ge in a relaxation state0.94Sn0.06The band gap of the energy band is reduced, the conversion from an indirect band gap to a direct band gap is promoted, the electron migration capability of the intrinsic layer 2 is improved, the gate valve voltage is reduced, the range of the variable resistance region is reduced, the amplification factor is increased, the amplification capability is further improved, and the sensitivity of the sensor is further improved. The magnetostrictive layer 10 is made of Ni-Fe-Cr constant elastic alloy and has the characteristics of high dynamic piezomagnetic coefficient, high mechanical quality factor and the like, and the piezoelectric layer 11 is made of quartz single crystal and has the characteristics of high quality factor, short electric polarization relaxation time, large impedance value, small capacitance, anisotropy and the like.
The processing method of the magnetoelectric film sensor with the self-amplification capability comprises the following steps:
step 1: referring to fig. 1, an electric field of 10kV/cm is applied to two ends of a quartz single crystal of a piezoelectric layer 11 material with a thickness of 40 μm × 25 μm × 15 μm to polarize the quartz single crystal, and then, by a magnetron sputtering technique, a Ni-Fe-Cr constant elasticity alloy of a magnetostrictive layer 10 is combined with the quartz single crystal of the piezoelectric layer 11 material to form a magnetoelectric composite layer of a block sandwich structure without adding an adhesive;
step 2: referring to FIG. 2, a layer of SiO is deposited on the Ni-Fe-Cr constant elastic underside of the magnetostrictive layer 10 under the piezoelectric layer 11 using a plasma chemical vapor deposition (PECVD) process (plasma chemical vapor deposition PECVD system, model ULVAC CC-200 Cz)2The material is used as an insulating layer 9 of the MOS tube;
and step 3: referring to FIG. 3, Ge in a relaxed state with a size of 60 μm × 25 μm × 20 μm is subjected to an epitaxial process0.94Sn0.06Epitaxially growing an intrinsic layer 2 on the upper side of the single crystal silicon of the substrate layer 1 at a temperature of 180 ℃;
and 4, step 4: referring to fig. 4, the insulating layer 9 and the intrinsic layer 2 are bonded together by an electrostatic bonding technique without an adhesive;
and 5: referring to fig. 5, boron ions and phosphorus ions are implanted into the left and right sides of the upper side of the intrinsic layer 2 by means of ion implantation (high energy ion implanter, model NV-GSD-HE) to form an n + -type semiconductor layer 3 and a p + -type semiconductor layer 4, which serve as the source and the drain of the MOS transistor, respectively;
step 6: referring to fig. 6, a first metal contact layer 5 and a second metal contact layer 6 are formed by depositing metal Ni on the n + type semiconductor layer 3 and the p + type semiconductor layer 4, respectively, using a tape stripping technique and a magnetron sputtering technique, and then sputtering metal Ag as a first output electrode 7 and a second output electrode 8 on the first metal contact layer 5 and the second metal contact layer 6, respectively, by a magnetron sputtering technique (magnetron sputtering coater, model KJLC LAB 18);
and 7: referring to fig. 7, a magnetostrictive layer 10 and a substrate layer 10 surrounding the upper side of a piezoelectric layer 11 are tightly wound around a copper coil to finally form the magnetoelectric thin film sensor of the present invention.
The above-mentioned embodiments are merely preferred embodiments of the present invention, which are merely illustrative and not restrictive, and it should be understood that other embodiments may be easily made by those skilled in the art by replacing or changing the technical contents disclosed in the specification, and therefore, all changes and modifications that are made on the principle of the present invention should be included in the scope of the claims of the present invention.

Claims (5)

1. The magnetoelectric film sensor is characterized by comprising a magnetoelectric composite layer, a MOS (metal oxide semiconductor) tube, a multilayer heterostructure and coils (12) densely wound on the upper side and the lower side of the multilayer heterostructure, wherein the multilayer heterostructure specifically comprises a substrate layer (1), an intrinsic layer (2), and n+Type semiconductor layer (3), p+The piezoelectric thin film transistor comprises a type semiconductor layer (4), a first metal contact layer (5), a second metal contact layer (6), a first output electrode (7), a second output electrode (8), an insulating layer (9), two magnetostrictive layers (10) and a piezoelectric layer (11);
n is+A semiconductor layer (3) of type p+The type semiconductor layer (4) is respectively used as a source electrode and a drain electrode of the MOS tube, the two magnetostrictive layers (10) are positioned on the upper side and the lower side of the piezoelectric layer (11), the magnetostrictive layer (10) on the upper side of the piezoelectric layer (11) is slightly shorter than the magnetostrictive layer (10) on the lower side of the piezoelectric layer (11), and the magnetostrictive layer (10) on the lower side of the piezoelectric layer (11) is used as a grid electrode of the MOS tube;
the intrinsic layer (2) is located on the substrate layer (1), n+A semiconductor layer (3) of type p+The type semiconductor layer (4) is respectively positioned at the upper left side and the upper right side of the intrinsic layer (2), and the first metal contact layer (5) and the second metal contact layer (6) are respectively positioned at n+A semiconductor layer (3) of type p+The first output electrode (7) and the second output electrode (8) are respectively positioned on the first metal contact layer (5) and the second metal contact layer (6) on the semiconductor layer (4); the insulating layer (9) is positioned above the intrinsic layer (2), and a part of the magnetostrictive layer (10) on the lower side of the piezoelectric layer (11) is arranged in the insulating layer (9); the coil (12) is wound around the magnetostrictive layer (10) and the substrate layer (1) on the upper side of the piezoelectric layer (11)。
2. Magnetoelectric thin film sensor according to claim 1, characterized in that the substrate layer (1) is monocrystalline silicon and the intrinsic layer (2) is Ge in relaxed state0.94Sn0.06N is said n+The type semiconductor layer (3) is Ge doped with boron ions0.94Sn0.06Said p is+The type semiconductor layer (4) is Ge doped with phosphorus ions0.94Sn0.06。
3. The magnetoelectric film sensor according to claim 1, wherein the piezoelectric layer (11) is made of quartz single crystal with a crystal orientation; the magnetostrictive layer (10) is made of Ni-Fe-Cr constant elastic alloy.
4. The magnetoelectric film sensor according to claim 1, wherein the first metal contact layer (5) and the second metal contact layer (6) are both made of nickel, the first output electrode (7) and the second output electrode (8) are both made of silver, and the insulating layer (9) is made of SiO2The coil (12) is made of copper.
5. Magnetoelectric thin film sensor according to claim 1, characterized in that the length of the intrinsic layer (2) is 2 times the length of the piezoelectric layer (11).
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