CN108054273A - A kind of field effect transistor tubular type Magnetic Sensor, its preparation method and application method - Google Patents
A kind of field effect transistor tubular type Magnetic Sensor, its preparation method and application method Download PDFInfo
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- CN108054273A CN108054273A CN201711456098.1A CN201711456098A CN108054273A CN 108054273 A CN108054273 A CN 108054273A CN 201711456098 A CN201711456098 A CN 201711456098A CN 108054273 A CN108054273 A CN 108054273A
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 93
- 230000005669 field effect Effects 0.000 title claims abstract description 50
- 238000000034 method Methods 0.000 title claims description 34
- 238000002360 preparation method Methods 0.000 title claims description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 64
- 238000012360 testing method Methods 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000001514 detection method Methods 0.000 claims abstract description 12
- 230000000694 effects Effects 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims description 35
- 239000010931 gold Substances 0.000 claims description 11
- 239000010936 titanium Substances 0.000 claims description 11
- 238000000137 annealing Methods 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 230000005611 electricity Effects 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- NFCWKPUNMWPHLM-UHFFFAOYSA-N [Si].[B].[Fe] Chemical compound [Si].[B].[Fe] NFCWKPUNMWPHLM-UHFFFAOYSA-N 0.000 claims description 2
- 238000004528 spin coating Methods 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 3
- 229910052782 aluminium Inorganic materials 0.000 claims 3
- 239000002033 PVDF binder Substances 0.000 claims 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 239000002131 composite material Substances 0.000 claims 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
- 230000003321 amplification Effects 0.000 abstract description 2
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 2
- 238000011896 sensitive detection Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 17
- 239000010409 thin film Substances 0.000 description 10
- 238000012546 transfer Methods 0.000 description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000696 magnetic material Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229960001296 zinc oxide Drugs 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 230000001595 contractor effect Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- MOSURRVHVKOQHA-UHFFFAOYSA-N [Tb].[Dy] Chemical compound [Tb].[Dy] MOSURRVHVKOQHA-UHFFFAOYSA-N 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- RIVZIMVWRDTIOQ-UHFFFAOYSA-N cobalt iron Chemical compound [Fe].[Co].[Co].[Co] RIVZIMVWRDTIOQ-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N35/00—Magnetostrictive devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N35/00—Magnetostrictive devices
- H10N35/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N35/00—Magnetostrictive devices
- H10N35/80—Constructional details
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
- Investigating Or Analyzing Materials By The Use Of Magnetic Means (AREA)
Abstract
The present invention provides a kind of field effect transistor tubular type Magnetic Sensors, have field-effect transistor structure, including semiconductor base, source electrode, drain electrode and grid；Wherein, semiconductor base is made of basal layer and the semiconductor layer positioned at the substrate surface, and is electrically insulated between basal layer and semiconductor layer, and basal layer has magnetostrictive effect, and semiconductor layer has piezoelectric effect；During working condition, the electric signal of field-effect transistor changes when external magnetic field acts on basal layer, and the detection in magnetic field is realized by testing the electric signal.The magnetic sensor arrangement is simple, and due to the signal amplification for combining field-effect transistor, can realize highly sensitive detection of magnetic field.
Description
Technical field
The present invention relates to detection of magnetic field technologies, and in particular to a kind of field effect transistor tubular type Magnetic Sensor, its preparation method
With application method.
Background technology
Magnetic Sensor is an important component in sensor, be magnetics signal be for conversion into electric signal etc. other
The sensor of the information output of required form.By the development in a nearly century, Magnetic Sensor is in each of human society life
Aspect, which plays, increasingly carrys out important role, and the annual whole world has billions of Magnetic Sensors to come into operation.With
Magnetic Sensor becomes better and approaching perfection day by day, and all trades and professions propose it increasingly higher demands, especially requires its detection accuracy more next
It is higher, while require it more and more wider using range, application field is further widened, to meet the needs of practical application.Therefore,
With high detection accuracy simultaneously with it is wide the use of range is one of new developing direction of Magnetic Sensor, also increasingly receive
The extensive concern of researcher.
At present, relatively conventional Magnetic Sensor mainly has following a few classes：Hall (Hall) sensor, fluxgate and electric current sense
Answer Magnetic Sensor, magnetoelectricity resistance type sensor etc..From the point of view of current present Research, the detection accuracy and amount of Magnetic Sensor at room temperature
Journey is typically to attend to one thing and lose sight of another.Therefore, prepare and meet the magnetic field sensor that high detection accuracy can realize wide detection range again
It is still a major challenge, it is one of direction made great efforts at present to seek new Magnetic Sensor.
The content of the invention
For the above-mentioned state of the art, the present invention provides a kind of Magnetic Sensor, has field-effect transistor structure, including partly leading
The body substrate and source electrode being electrically connected with semiconductor base, drain electrode and grid；Wherein, semiconductor base is by basal layer and position
It forms in the semiconductor layer of the substrate surface, and is electrically insulated between basal layer and semiconductor layer, basal layer is stretched with mangneto
Contracting effect, semiconductor layer have piezoelectric effect.
During working condition, external magnetic field acts on basal layer, and due to magnetostriction materials, there is magnetoelectricities with piezoelectric material
Coupling effect, magnetostriction materials generate stress or strain transfer to semiconductor layer, and the piezoelectric material of semiconductor layer is due to piezoelectricity
Effect and generate charge, so as to change the concentration of carrier in fieldistor channel, cause the electricity of field-effect transistor
Signal changes, and the detection of the external magnetic field is realized by testing the electric signal.
The semiconductor base is the semiconductor base in field-effect transistor.
The basal layer has magnetostrictive effect, i.e. base layer material is magnetostriction materials, and species is unlimited；Make
To be preferred, the base layer material has big magnetostriction coefficient, to improve detectivity；As further preferred,
The base layer material, which uses, has high saturation field, the magnetostriction materials of big magnetostriction coefficient and forced magnetostriction system
The big amorphous soft magnetic material of number is compound, to realize the detection of magnetic field of wide-range simultaneously.Described there is high saturation field, big mangneto to stretch
The magnetostriction materials of contracting coefficient include but unlimited iron gallium (FeGa) or terbium dysprosium ferrum (TeDyFe) etc.；The pressure mangneto is stretched
The big amorphous soft magnetic material of contracting coefficient includes but not limited to iron silicon boron (FeSiB) or ferro-cobalt silicon (CoFeSi) etc..
It is flexible magnetostriction materials as further preferred, described base layer material, such as flexible nickel foil etc., it is described
Semiconductor layer be the film layer of the low thickness on the flexibility magnetostriction materials, the source electrode, drain electrode and grid are low
The thin-film material of thickness, thus base layer material such as can be stretched, reversed, folded at the deformations, so as to meet it is flexible should
With the needs in field, such as applied to wearable device etc..
The semiconductor layer has piezoelectric effect, i.e. and the semi-conducting material is piezoelectric material, and species is unlimited,
Including zinc oxide, gallium nitride etc..
It is electrically insulated between the basal layer and semiconductor layer, as a kind of realization method, in basal layer and semiconductor layer
Between insulating layer, such as aluminum oxide film layer etc. are set.
The source electrode is the source electrode in field-effect transistor, and material is unlimited, including metal material etc.；As excellent
Choosing, the source electrode is using golden (Au) thin-film material or titanium (Ti) thin-film material.
The drain electrode is the drain electrode in field-effect transistor, and material is unlimited, including metal material etc.；As excellent
Choosing, the drain electrode is using golden (Au) thin-film material or titanium (Ti) thin-film material.
The electric signal of the field-effect transistor includes but not limited to the source and drain electrode current of field-effect transistor, raceway groove electricity
Transport factor etc..
The present invention also provides a kind of methods for preparing above-mentioned field effect transistor tubular type Magnetic Sensor, include the following steps：
(1) preparation of the semiconductor base of field-effect transistor
On the base layer using the method growth semi-conducting material of magnetron sputtering；
(2) prepared by the source electrode of field-effect transistor
Source electrode is prepared by micro fabrication on a semiconductor substrate, preferably, preparing source using ultraviolet photolithographic method
Then pole figure case prepares source electrode using magnetically controlled sputter method in the source electrode patterned surfaces；As further preferred, prepare source electrode it
Short annealing heat treatment is carried out afterwards, and Ohmic contact is formed to further ensure that；
(3) prepared by the drain electrode of field-effect transistor
It is prepared and drained by micro fabrication on a semiconductor substrate, leaked preferably, being prepared using ultraviolet photolithographic method
Then pole figure case is prepared on the drain pattern surface using magnetically controlled sputter method and drained；As further preferred, drain electrode is prepared
Short annealing heat treatment is carried out afterwards, and Ohmic contact is formed to further ensure that；
(4) prepared by the grid of field-effect transistor
Grid is prepared by micro fabrication on a semiconductor substrate, preferably, preparing grid using ultraviolet photolithographic method
Then pole figure case grows grid material using pulse laser, chemical spin coating or magnetically controlled sputter method；As further preferred,
It prepares grid and carries out short annealing heat treatment afterwards, Schottky contacts are formed to further ensure that；
The application method of the field effect transistor tubular type Magnetic Sensor of the present invention includes the following steps：
(1) fixed externally-applied magnetic field is applied to the basal layer of Magnetic Sensor, tests field-effect transistor in the Magnetic Sensor
Electric signal under certain testing situations, such as output characteristic curve, transfer characteristic curve etc. change the size of externally-applied magnetic field,
Obtain a series of reference electrical signals under a certain fixed externally-applied magnetic field；
(2) keep identical with the test condition in step (1), test the actual electricity of field-effect transistor in the Magnetic Sensor
Signal the actual electric signal is compared with the reference electrical signal obtained in step (1), same reference electrical signal institute
The magnetic field value that corresponding externally-applied magnetic field as actually measures.
In conclusion the present invention forms a kind of new Magnetic Sensor using field-effect transistor structure, pass through transistor
Semiconductor base is designed as the basal layer that the semiconductor layer being made of piezoelectric material and magnetostriction materials form by structure design
Composition, external magnetic field acts on basal layer during working condition, and due to magnetostrictive effect, it generates mechanical movement and acts on half
Conductor layer so that the carrier concentration in fieldistor channel changes under the effect of piezoelectricity effectiveness, causes field effect transistor
The electric signal parameter of pipe changes, and the detection in magnetic field is realized by testing the electric signal.In addition, the Magnetic Sensor combines field-effect
The signal amplification of transistor realizes highly sensitive detection of magnetic field, especially when using with high saturation field, big mangneto
The material of coefficient of dilatation and the big amorphous soft magnetic material of forced magnetostriction coefficient it is compound as base layer material when, can be made
Not only there is high detection accuracy, and can realize the wide magnetic field sensor for detecting range, detectable external magnetic field scope from
Tesla (nT) is received to tesla (T) magnitude, is had a good application prospect in magnetic sensor technologies field.Also, work as base
Primer is flexible magnetostriction materials, and semiconductor layer is the film layer of the low thickness on the flexibility magnetostriction materials, source
When pole, drain electrode and grid are the thin-film material of low thickness, the deformations such as which can be stretched, reversed, folded,
So as to meeting the needs in flexible application field, such as applied to wearable device etc..
Description of the drawings
Fig. 1 is the structure diagram of flexible Magnetic Sensor in the embodiment of the present invention.
Specific embodiment
Below in conjunction with the accompanying drawings with embodiment, the present invention is furture elucidated.It is to be understood that these embodiments are merely to illustrate this hair
It is bright rather than limit the scope of the invention.
Reference numeral in Fig. 1 is：Source electrode 1, grid 2, drain electrode 3, semiconductor layer 4, basal layer 5.
Embodiment 1：
In the present embodiment, the structure of Magnetic Sensor is as shown in Figure 1.The Magnetic Sensor has field-effect transistor structure, by
Semiconductor base, source electrode 1, drain electrode 3 and grid 2 are formed.Source electrode 1, drain electrode 3 are located at grid 2 on semiconductor base；Wherein,
Semiconductor base is made of the basal layer 5 to insulate with the semiconductor layer 4 on basal layer 5, and basal layer 5 is stretched with mangneto
Contracting effect, semiconductor layer 4 have piezoelectric effect.
Basal layer 5 is the aluminum oxide film structure that the flexible nickel foil that thickness is 5 μm~50 μm is 10nm~1000nm with thickness
Into aluminum oxide film is for the nickel foil that insulate.Semiconductor layer 4 is the zinc-oxide film that thickness is 10nm~500nm nanometers.Source electrode
1 be thickness be 2nm~100nm gold thin film, drain electrode 3 be titanium film that thickness is 2nm~100nm, grid 4 is that thickness is 2nm
The gold thin film of~100nm.
The preparation method of above-mentioned Magnetic Sensor includes the following steps：
(1) preparation of flexible base layer
Using atomic layer deposition or magnetically controlled sputter method 5 μm~50 μm flexible nickel foil surface growth 10nm~
1000nm aluminum oxide films.
(2) preparation of semiconductor layer
10nm~500nm zinc-oxide films are grown on above-mentioned flexible base layer table surface using the method for magnetron sputtering.
(3) prepared by the source electrode of field-effect transistor
After step (1) and (2), semiconductor base is obtained, is prepared on the semiconductor base using ultraviolet photolithographic method
Length is 5 μm~500 μm, and width is 5 μm~500 μm of rectangle pattern, then using magnetically controlled sputter method in the rectangle
Golden (Au) films of patterned surfaces growth 2nm~100nm, the heat treatment of short annealing afterwards form Ohmic contact.
(4) prepared by the drain electrode of field-effect transistor
Ultraviolet photolithographic method is used to prepare length as 5 μm~500 μm on a semiconductor substrate, width is 5 μm~500 μm
Then rectangle pattern grows 2nm~100nm titaniums (Ti) film using magnetically controlled sputter method in the rectangle patterned surfaces, it
Short annealing is heat-treated afterwards, forms Ohmic contact.
(5) prepared by the grid of field-effect transistor
Ultraviolet photolithographic method is used to prepare length as 5 μm~50 μm on a semiconductor substrate, width is 5 μm~50 μm of length
Square-shaped gate pattern, then using golden (Au) films of magnetically controlled sputter method 2nm~100nm, the heat treatment of short annealing afterwards is formed
Schottky contacts.
The Magnetic Sensor is tested as follows：
(1) when not applying externally-applied magnetic field, which is tested using semiconductor parameter instrument under certain testing situations and is passed
The output characteristic curve of field-effect transistor in sensor；
(2) fixed externally-applied magnetic field is applied to the basal layer of the semiconductor magnetic sensor, using identical with step (1)
Semiconductor parameter instrument, and field-effect crystalline substance in the semiconductor magnetic sensor is tested under the test condition identical with step (1)
The reference output characteristic curve of body pipe；It was found that when applying externally-applied magnetic field, the output of the field-effect transistor of the Magnetic Sensor is special
Linearity curve changes；
Change the size of externally-applied magnetic field, obtain a series of reference output characteristic curves under a certain fixed externally-applied magnetic field.
In practical applications, the reality output characteristic curve of the field-effect transistor in the semiconductor magnetic sensor is tested,
Specific test condition is identical with the test condition described in step (1), obtains actual output characteristic curve；By the defeated of the reality
Go out characteristic curve and compare with the output characteristic curve obtained in step (2), corresponding to same output characteristic curve
The magnetic field value that externally-applied magnetic field as actually measures.
Embodiment 2：
In the present embodiment, the structure and the structure of the Magnetic Sensor in embodiment 1 of Magnetic Sensor are essentially identical, different
It is：Source electrode 1 be thickness be 2nm~100nm titanium film, drain electrode 3 be gold thin film that thickness is 2nm~100nm, basal layer 5 is
Thickness is the magnetostriction materials FeSiB films of 2nm~500nm, and semiconductor layer 4 is the gallium nitride that thickness is 2nm~500nm
(GaN) film.
The preparation method of the Magnetic Sensor and the preparation method in embodiment 1 are essentially identical, except that：Step (3)
In, use magnetically controlled sputter method on the rectangle source electrode pattern growth thickness for 2~100nm titanium film；In step (4),
Use magnetically controlled sputter method in the rectangle drain pattern growth thickness for 2~100nm gold thin film；In step (2), use
Magnetically controlled sputter method prepares gallium nitride (GaN) film that thickness is 2~500nm in substrate surface.
The semiconductor magnetic sensor is tested as follows：
(1) when not applying externally-applied magnetic field, which is tested using semiconductor parameter instrument under certain testing situations and is passed
The transfer characteristic curve of field-effect transistor in sensor；
(2) fixed externally-applied magnetic field is applied to the basal layer of the semiconductor magnetic sensor, using identical with step (1)
Semiconductor parameter instrument, and field-effect crystalline substance in the semiconductor magnetic sensor is tested under the test condition identical with step (1)
Reference transfer characteristic curve of body pipe etc.；It was found that when applying externally-applied magnetic field, the transfer of the field-effect transistor of the Magnetic Sensor
Characteristic curve changes；
Change the size of externally-applied magnetic field, obtain a series of reference transfer characteristic curves under a certain fixed externally-applied magnetic field.
In practical applications, the actual transfer characteristic curve of the field-effect transistor in the semiconductor magnetic sensor is tested,
Specific test condition is identical with the test condition described in step (1), obtains actual transfer characteristic curve；By turning for the reality
It moves characteristic curve to compare with the transfer characteristic curve obtained in step (2), corresponding to same transfer characteristic curve
The magnetic field value that externally-applied magnetic field as actually measures.
Technical scheme and advantageous effect is described in detail in embodiment described above, it should be understood that
The foregoing is merely specific embodiments of the present invention, are not intended to limit the invention, all to be done in the spirit of the present invention
Any modification and improvement etc., should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of field effect transistor tubular type Magnetic Sensor, it is characterized in that：It is including semiconductor base and mutually electric with semiconductor base
Source electrode, drain electrode and the grid of connection；Wherein, semiconductor base is by basal layer and the semiconductor layer group positioned at the substrate surface
Into, and be electrically insulated between basal layer and semiconductor layer, basal layer has magnetostrictive effect, and semiconductor layer is imitated with piezoelectricity
It should；
During working condition, external magnetic field acts on basal layer, and the electric signal of field-effect transistor changes, by testing the electricity
Signal realizes the detection in magnetic field.
2. field effect transistor tubular type Magnetic Sensor as described in claim 1, it is characterized in that：The base layer material is
One or more kinds of composite materials in FeGa, TeDyFe, iron silicon boron FeSiB, CoFeSi.
3. field effect transistor tubular type Magnetic Sensor as described in claim 1, it is characterized in that：The semiconductor layer material is oxygen
Change zinc, lead zirconate titanate or polyvinylidene fluoride.
4. field effect transistor tubular type Magnetic Sensor as described in claim 1, it is characterized in that：The source electrode is in aluminium, gold, titanium
One or several kinds；
Preferably, the drain electrode is the one or several kinds in aluminium, gold, titanium；
Preferably, the grid is the one or several kinds in aluminium, gold, titanium.
5. field effect transistor tubular type Magnetic Sensor as described in claim 1, it is characterized in that：The semiconductor base is micro-nano
Size；
Preferably, the thickness of the semiconductor base is 1 micron~50 microns.
6. field effect transistor tubular type Magnetic Sensor as claimed in claim 5, it is characterized in that：Source electrode, drain electrode and the grid
It is micro-or nano size；
Preferably, the length and width of the source electrode, drain electrode and grid is 1 micron~200 microns, thickness is nanoscale.
7. field effect transistor tubular type Magnetic Sensor as described in claim 1, it is characterized in that：The base layer material is flexibility
Magnetostriction materials.
8. field effect transistor tubular type Magnetic Sensor as described in claim 1, it is characterized in that：The electric signal includes source-drain electrode
Electric current and/or channel electron mobility.
9. the preparation method of the field effect transistor tubular type Magnetic Sensor as described in any claim in claim 1 to 8, special
Sign is：Include the following steps：
On the base layer using the method growth semi-conducting material of magnetron sputtering；
Source electrode pattern is prepared using ultraviolet photolithographic method on a semiconductor substrate, then using magnetically controlled sputter method in the source electrode figure
Case surface prepares source electrode；Preferably, short annealing heat treatment is carried out after preparing source electrode；
Drain pattern is prepared using ultraviolet photolithographic method on a semiconductor substrate, then using magnetically controlled sputter method in the drain electrode figure
Case surface prepares drain electrode；Preferably, carry out short annealing heat treatment after preparing drain electrode；
Gate pattern is prepared using ultraviolet photolithographic method on a semiconductor substrate, then using pulse laser method, chemical spin coating
Method or magnetically controlled sputter method prepare grid；Preferably, short annealing heat treatment is carried out after preparing grid.
10. the application method of the field effect transistor tubular type Magnetic Sensor as described in any claim in claim 1 to 8,
It is characterized in：Include the following steps：
(1) fixed externally-applied magnetic field is applied to the basal layer of Magnetic Sensor, tests in the Magnetic Sensor field-effect transistor one
Determine the electric signal under test condition, change the size of externally-applied magnetic field, obtain a series of references under a certain fixed externally-applied magnetic field
Electric signal；
(2) keep identical with the test condition in step (1), test the actual telecommunications of field-effect transistor in the Magnetic Sensor
Number, which is compared with the reference electrical signal obtained in step (1), same reference electrical signal institute is right
The magnetic field value that the externally-applied magnetic field answered as actually measures.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109920844A (en) * | 2019-03-26 | 2019-06-21 | 电子科技大学 | A kind of insulated-gate type piezoelectricity field effect transistor |
| CN110729396A (en) * | 2019-09-25 | 2020-01-24 | 郑州轻工业学院 | Magnetoelectric film sensor with self-amplification capability |
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| CN101866860A (en) * | 2010-05-26 | 2010-10-20 | 上海大学 | Preparation method of ZnO thin film field-effect transistor |
| US20130252030A1 (en) * | 2012-03-22 | 2013-09-26 | Korea Institute Of Machinery And Materials | Magnetoelectric composites |
| CN103107205A (en) * | 2013-01-18 | 2013-05-15 | 大连理工大学 | Zinc-oxide-based metal oxide semiconductor (MOS) element on graphite substrate |
| CN103900726A (en) * | 2014-04-01 | 2014-07-02 | 国家纳米科学中心 | Piezoelectric temperature sensor |
| KR101552461B1 (en) * | 2015-05-11 | 2015-09-10 | 성균관대학교산학협력단 | Field effect transistor type sensor for measuring pressure and magnetic field |
| CN207781649U (en) * | 2017-12-28 | 2018-08-28 | 中国科学院宁波材料技术与工程研究所 | A kind of field effect transistor tubular type Magnetic Sensor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109920844A (en) * | 2019-03-26 | 2019-06-21 | 电子科技大学 | A kind of insulated-gate type piezoelectricity field effect transistor |
| CN110729396A (en) * | 2019-09-25 | 2020-01-24 | 郑州轻工业学院 | Magnetoelectric film sensor with self-amplification capability |
| CN110729396B (en) * | 2019-09-25 | 2022-09-16 | 郑州轻工业学院 | Magnetoelectric film sensor with self-amplification capability |
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