CN108151768A - A kind of semiconductor magnetic sensor, preparation method and application method - Google Patents
A kind of semiconductor magnetic sensor, preparation method and application method Download PDFInfo
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- CN108151768A CN108151768A CN201711455904.3A CN201711455904A CN108151768A CN 108151768 A CN108151768 A CN 108151768A CN 201711455904 A CN201711455904 A CN 201711455904A CN 108151768 A CN108151768 A CN 108151768A
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 93
- 239000004065 semiconductor Substances 0.000 title claims abstract description 70
- 238000000034 method Methods 0.000 title claims description 32
- 238000002360 preparation method Methods 0.000 title claims description 7
- 230000005669 field effect Effects 0.000 claims abstract description 35
- 238000012360 testing method Methods 0.000 claims abstract description 22
- 238000001514 detection method Methods 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 13
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 9
- 239000002033 PVDF binder Substances 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052733 gallium Inorganic materials 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 5
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 230000026267 regulation of growth Effects 0.000 claims description 4
- NFCWKPUNMWPHLM-UHFFFAOYSA-N [Si].[B].[Fe] Chemical compound [Si].[B].[Fe] NFCWKPUNMWPHLM-UHFFFAOYSA-N 0.000 claims description 2
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- RIVZIMVWRDTIOQ-UHFFFAOYSA-N cobalt iron Chemical compound [Fe].[Co].[Co].[Co] RIVZIMVWRDTIOQ-UHFFFAOYSA-N 0.000 claims description 2
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- 230000000694 effects Effects 0.000 abstract description 10
- 230000003321 amplification Effects 0.000 abstract description 2
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 2
- 238000011896 sensitive detection Methods 0.000 abstract description 2
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- 239000007772 electrode material Substances 0.000 description 1
- 239000007782 materials by structure Substances 0.000 description 1
- PQIOSYKVBBWRRI-UHFFFAOYSA-N methylphosphonyl difluoride Chemical group CP(F)(F)=O PQIOSYKVBBWRRI-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
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- General Physics & Mathematics (AREA)
- Hall/Mr Elements (AREA)
Abstract
The present invention provides a kind of semiconductor magnetic sensors, have field-effect transistor structure, including semiconductor base, source electrode, drain electrode and grid；Wherein, grid is made of the second grid with magnetostrictive effect that the first grid with piezoelectric effect is connect with semiconductor base and is connect with first grid；During working condition, the electric signal of field-effect transistor changes when external magnetic field acts on second grid, and the detection in magnetic field is realized by testing the electric signal.The magnetic sensor arrangement is simple, and due to the signal amplification for combining field-effect transistor, can realize highly sensitive detection of magnetic field.
Description
Technical field
The present invention relates to detection of magnetic field technologies, and in particular to a kind of semiconductor magnetic sensor, preparation method and user
Method.
Background technology
Magnetic Sensor is an important component in sensor, magnetics amount signal or other physical quantitys by certain
Rule is for conversion into electric signal or the information output of other required forms.By the development in a nearly century, magnetic field sensor exists
The various aspects of human society life, which play, increasingly carrys out important role, and every year, the whole world has billions of magnetic to pass
Sensor comes into operation.Along with becoming better and approaching perfection day by day for Magnetic Sensor, all trades and professions propose it increasingly higher demands, especially
It is required that its detection accuracy is higher and higher, while requires it more and more wider using range, application field is further widened, to meet reality
The demand of border application.Therefore, with high detection accuracy simultaneously with it is wide the use of range is the new developing direction of Magnetic Sensor
One of, also increasingly receive the extensive concern of researcher.
At present, relatively conventional Magnetic Sensor mainly has following a few classes：Hall (Hall) sensor, fluxgate and electric current sense
Answer Magnetic Sensor, magnetoelectricity resistance type sensor etc..From the point of view of current present Research, at room temperature, the detection accuracy of Magnetic Sensor with
Range is typically to attend to one thing and lose sight of another.Therefore, it prepares and meets the magnetic field sensing that high detection accuracy can realize wide detection range again
Device is still a major challenge, and it is one of direction made great efforts at present to seek novel Magnetic Sensor.
Invention content
For the above-mentioned state of the art, the present invention provides a kind of semiconductor magnetic sensor, has field-effect transistor structure, packet
Include the semiconductor base and source electrode being connected with semiconductor base, drain electrode and grid；Wherein, grid by with semiconductor base
The first grid of connection and be connected with first grid second grid composition, and first grid be piezoelectric material, second
Grid is magnetostriction materials.
During working condition, external magnetic field acts on second grid, and due to magnetostriction, just there is magnetoelectricities with piezoelectric material
Coupling effect, magnetostriction materials generate stress or strain is transmitted to first grid, and the piezoelectric material of first grid is due to piezoelectricity
Effect and generate charge, so as to change the concentration of carrier in fieldistor channel, cause the electricity of field-effect transistor
Signal changes, and the detection in magnetic field is realized by testing the electric signal.
The second grid material is magnetostriction materials, i.e., with magnetostrictive effect, type is unlimited；As excellent
Choosing, the second grid material has big magnetostriction coefficient, to improve detectivity；As further preferred, institute
The second grid material stated, which uses, has high saturation field, the magnetostriction materials of big magnetostriction coefficient and forced magnetostriction system
The big amorphous soft magnetic material of number is compound, to realize the detection of magnetic field of wide-range simultaneously.Described there is high saturation field, big mangneto to stretch
The magnetostriction materials of contracting coefficient include but unlimited iron gallium (FeGa) or terbium dysprosium ferrum (TeDyFe) etc.；The pressure mangneto is stretched
The big amorphous soft magnetic material of contracting coefficient includes but not limited to iron silicon boron (FeSiB) or ferro-cobalt silicon (CoFeSi) etc..
The first grid material is piezoelectric material, i.e., with piezoelectric effect, type is unlimited；When the first grid
When the piezoelectric modulus of pole material is big, since the mechanical movement that magnetostrictive effect second grid material generates can make piezoelectric material
More charges are generated, so as to obtain higher sensitivity, therefore preferably, the first grid material selection has greatly
Piezoelectric modulus piezoelectric material, further preferably, using the big lead zirconate titanate of piezoelectric modulus (PZT) or polyvinylidene fluoride
Material (PVDF) etc..
The source electrode is the source electrode in field-effect transistor, and conductive, material is unlimited, including metal material
Deng；Preferably, the source electrode material is aluminium (Al), golden (Au) or titanium (Ti).The source electrode form is unlimited, preferably
Film-form.
The drain electrode is the drain electrode in field-effect transistor, and conductive, material is unlimited, including metal material
Deng；Preferably, the drain material is aluminium (Al), golden (Au) or titanium (Ti).The drain electrode form is unlimited, preferably
Film-form.
The semiconductor base is the semiconductor base in field-effect transistor, and material is unlimited, is partly led including silicon
Body substrate, such as n-type silicon or p-type silicon etc.；Preferably, the semiconductor base uses nitrogen gallium (GaN) and gallium aluminium
The silicon substrate of nitrogen (AlxGa1-xN) epitaxial layer.
In order to improve detectivity, the semiconductor base is preferably micro-or nano size, as further preferred, length
It is 10 microns~500 microns to spend, and width is 5 microns~100 microns, and thickness is 1 micron~50 microns.Further preferably, it is described
Source electrode, drain electrode and grid be micro-or nano size；More preferably, the length and width of the source electrode, drain electrode and grid is 1
~200 microns, thickness is nanoscale.
The electric signal of the field-effect transistor includes but not limited to the source and drain electrode current of field-effect transistor, raceway groove electricity
Transport factor etc..
The present invention also provides a kind of methods for preparing above-mentioned semiconductor magnetic sensor, include the following steps：
(1) prepared by the source electrode of field-effect transistor
Source electrode is prepared by micro fabrication on a semiconductor substrate, preferably, preparing source using ultraviolet photolithographic method
Then pole figure case prepares source electrode using magnetically controlled sputter method in the source electrode patterned surfaces；As further preferred, prepare source electrode it
Short annealing heat treatment is carried out afterwards, and Ohmic contact is formed to further ensure that；
(2) prepared by the drain electrode of field-effect transistor
It is prepared and drained by micro fabrication on a semiconductor substrate, leaked preferably, being prepared using ultraviolet photolithographic method
Then pole figure case is prepared on the drain pattern surface using magnetically controlled sputter method and drained；As further preferred, drain electrode is prepared
Short annealing heat treatment is carried out afterwards, and Ohmic contact is formed to further ensure that；
(3) prepared by the grid of field-effect transistor
Grid is prepared by micro fabrication on a semiconductor substrate, preferably, preparing grid using ultraviolet photolithographic method
Pole figure case, then using pulse laser method or chemical one grid material of spin coating method growth regulation；Then, using magnetron sputtering
Two grid material of method growth regulation；
Commercialized commercial product may be used in the semiconductor base of field-effect transistor, can also be existed using deposition technique
Extension diffusion layer is deposited on semiconductor to be made with diffusing, doping element.
The application method of the semiconductor magnetic sensor of the present invention includes the following steps：
(1) fixed externally-applied magnetic field is applied to the second grid of semiconductor magnetic sensor, tests Magnetic Sensor midfield effect
The electric signal of transistor under certain testing situations, such as output characteristic curve, transfer characteristic curve etc. are answered, changes externally-applied magnetic field
Size, obtain a series of reference electrical signals under a certain fixed externally-applied magnetic field；
(2) it keeps identical with the test condition in step (1), tests the practical electricity of field-effect transistor in the Magnetic Sensor
Signal the practical electric signal is compared with the reference electrical signal obtained in step (1), same reference electrical signal institute
The magnetic field value that corresponding externally-applied magnetic field as actually measures.
In conclusion the present invention forms a kind of novel Magnetic Sensor using field-effect transistor structure, pass through transistor
Gate design is the first grid that is made of piezoelectric material and the second grid being made of magnetostriction materials by structure design,
External magnetic field acts on second grid during working condition, and due to magnetostrictive effect, it generates mechanical movement and acts on the first grid
Pole so that the carrier concentration in fieldistor channel changes under the effect of piezoelectricity effectiveness, causes field-effect transistor
Electric signal changes, and the detection in magnetic field is realized by testing the electric signal.In addition, the Magnetic Sensor combines field-effect transistor
Signal amplification realizes highly sensitive detection of magnetic field, especially when using with high saturation field, big magnetostriction coefficient
Material and the big amorphous soft magnetic material of forced magnetostriction coefficient it is compound as second grid material when, can be made and not only have
Have high detection accuracy, and can realize the magnetic field sensor of wide detection range, detectable external magnetic field range from nanotesla this
(nT) to tesla (T) magnitude is drawn, is had a good application prospect in magnetic sensor technologies field.
Description of the drawings
Fig. 1 is the structure diagram of the semiconductor magnetic sensor in the embodiment of the present invention 1.
Specific embodiment
Below in conjunction with the accompanying drawings with embodiment, the present invention is furture elucidated.It should be understood that these embodiments are merely to illustrate this hair
It is bright rather than limit the scope of the invention.
Reference numeral in Fig. 1 is：Semiconductor base 1, source electrode 2, drain electrode 3, first grid 4, second grid 5.
Embodiment 1：
In the present embodiment, the structure of semiconductor magnetic sensor is as shown in Figure 1.The semiconductor magnetic sensor has field-effect crystalline substance
Body pipe structure is made of semiconductor base 1, source electrode 2, drain electrode 3 and grid.Source electrode 2, drain electrode 3 are located at semiconductor-based with grid
On bottom 1；Wherein, grid is by being located at 5 groups of the first grid 4 on semiconductor base 1 and the second grid on first grid 4
Into.
Also, silicon substrate of the semiconductor base 1 for nitrogen gallium (GaN) and aluminum gallium nitride (AlxGa1-xN) epitaxial layer.Source electrode
2 be thickness be 2nm~100nm gold thin film, drain electrode 3 be titanium film that thickness is 2nm~100nm, first grid 4 is that thickness is
Lead zirconate titanate (PZT) film of 2nm~500nm, second grid 5 are that the magnetostriction materials FeGa that thickness is 2nm~500nm is thin
Film.
The preparation method of the semiconductor magnetic sensor includes the following steps：
(1) prepared by the semiconductor base of field-effect transistor
Use pulsed laser deposition (PLD) system or magnetron sputtering on Si is sunk to the bottom epitaxial growth thickness for 2nm~
The GaN film and thickness of 50nm is the Al of 2nm~50nmxGa1-xN(0<x<0.5) film.
(2) prepared by the source electrode of field-effect transistor
Ultraviolet photolithographic method is used to prepare length as 5 μm~500 μm on a semiconductor substrate, width is 5 μm~500 μm
Rectangle source electrode pattern, then use magnetically controlled sputter method on the rectangle source electrode pattern growth thickness for 2nm~100nm's
Golden (Au) film.
(3) prepared by the drain electrode of field-effect transistor
Ultraviolet photolithographic method is used to prepare length as 5 μm~500 μm on a semiconductor substrate, width is 5 μm~500 μm
Rectangle drain pattern, then use magnetically controlled sputter method in the rectangle drain pattern growth thickness for 2nm~100nm's
Titanium (Ti) film.
(4) prepared by the gate medium of field-effect transistor
Ultraviolet photolithographic method is used to prepare length as 5 μm~10 μm on a semiconductor substrate, width is 5 μm~10 μm of length
Rectangular first grid pattern, then use pulse laser method on the rectangle first grid pattern growth thickness for 2nm~
Lead zirconate titanate (PZT) film of 500nm；Then, using magnetically controlled sputter method in lead zirconate titanate (PZT) film surface growth thickness
Magnetostriction materials FeGa films for 2nm~500nm.
The semiconductor magnetic sensor is tested as follows：
(1) when not applying externally-applied magnetic field, which is tested using semiconductor parameter instrument under certain testing situations and is passed
The output characteristic curve of field-effect transistor in sensor；
(2) fixed externally-applied magnetic field is applied to the second grid of the semiconductor magnetic sensor, using identical with step (1)
Semiconductor parameter instrument, and test field-effect in the semiconductor magnetic sensor under the test condition identical with step (1)
The reference output characteristic curve of transistor；It was found that when applying externally-applied magnetic field, the output of the field-effect transistor of the Magnetic Sensor
Characteristic curve changes；
Change the size of externally-applied magnetic field, obtain a series of reference output characteristic curves under a certain fixed externally-applied magnetic field.
In practical applications, the reality output characteristic curve of the field-effect transistor in the semiconductor magnetic sensor is tested,
Specific test condition is identical with the test condition described in step (1), obtains practical output characteristic curve；By the defeated of the reality
Go out characteristic curve and compare with the output characteristic curve obtained in step (2), corresponding to same output characteristic curve
The magnetic field value that externally-applied magnetic field as actually measures.
Embodiment 2：
In the present embodiment, the structure and the structure of the semiconductor magnetic sensor in embodiment 1 of semiconductor magnetic sensor are basic
It is identical, except that：Source electrode 2 be thickness be 2nm~100nm titanium film, drain electrode 3 be thickness be 2nm~100nm gold it is thin
Film, first grid 4 are polyvinylidene fluoride material (PVDF) films that thickness is 2nm~500nm, and second grid 5 is that thickness is
The magnetostriction materials FeSiB films of 2nm~500nm.
The preparation method of the semiconductor magnetic sensor and the preparation method in embodiment 1 are essentially identical, except that：Step
Suddenly in (2), use magnetically controlled sputter method on the rectangle source electrode pattern growth thickness for the titanium film of 2nm~100nm；Step
(3) in, use magnetically controlled sputter method in the rectangle drain pattern growth thickness for the gold thin film of 2nm~100nm；Step
(4) in, use chemical spin coating method on rectangle first grid pattern growth thickness for the poly- inclined difluoro second of 2nm~500nm
Alkene material (PVDF) film；Then, it is grown using magnetically controlled sputter method in polyvinylidene fluoride material (PVDF) film surface thick
Spend the magnetostriction materials FeSiB films for 2nm~500nm.
The semiconductor magnetic sensor is tested as follows：
(1) when not applying externally-applied magnetic field, which is tested using semiconductor parameter instrument under certain testing situations and is passed
The transfer characteristic curve of field-effect transistor in sensor；
(2) fixed externally-applied magnetic field is applied to the second grid of the semiconductor magnetic sensor, using identical with step (1)
Semiconductor parameter instrument, and test field-effect in the semiconductor magnetic sensor under the test condition identical with step (1)
Reference transfer characteristic curve of transistor etc.；It was found that when applying externally-applied magnetic field, the field-effect transistor of the Magnetic Sensor turns
Characteristic curve is moved to change；
Change the size of externally-applied magnetic field, obtain a series of reference transfer characteristic curves under a certain fixed externally-applied magnetic field.
In practical applications, the actual transfer characteristic curve of the field-effect transistor in the semiconductor magnetic sensor is tested,
Specific test condition is identical with the test condition described in step (1), obtains practical transfer characteristic curve；By turning for the reality
It moves characteristic curve to compare with the transfer characteristic curve obtained in step (2), corresponding to same transfer characteristic curve
The magnetic field value that externally-applied magnetic field as actually measures.
Technical scheme of the present invention and advantageous effect is described in detail in embodiment described above, it should be understood that
The foregoing is merely specific embodiments of the present invention, are not intended to restrict the invention, all to be done in the spirit of the present invention
Any modification and improvement etc., should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of semiconductor magnetic sensor, it is characterized in that：With field-effect transistor structure, including semiconductor base, Yi Jiyu
Source electrode, drain electrode and the grid that semiconductor base is connected；Wherein, grid by the first grid that is connect with semiconductor base and with
The second grid composition of first grid connection, and first grid is piezoelectric material, and second grid is magnetostriction materials；
During working condition, the electric signal of field-effect transistor changes when external magnetic field acts on second grid, passes through test
The electric signal realizes the detection in magnetic field.
2. semiconductor magnetic sensor as described in claim 1, it is characterized in that：The first grid material be lead zirconate titanate or
Person's polyvinylidene fluoride.
3. semiconductor magnetic sensor as described in claim 1, it is characterized in that：The second grid material is iron gallium (FeGa)
Either terbium dysprosium ferrum (TeDyFe) and iron silicon boron (FeSiB) or the composite material of ferro-cobalt silicon (CoFeSi).
4. semiconductor magnetic sensor as described in claim 1, it is characterized in that：The source electrode be one kind in aluminium, gold, titanium or
Person is several.
5. semiconductor magnetic sensor as described in claim 1, it is characterized in that：The drain electrode be one kind in aluminium, gold, titanium or
Person is several.
6. semiconductor magnetic sensor as described in claim 1, it is characterized in that：The semiconductor base is nitrogen gallium and aluminium
The silicon substrate of gallium nitrogen epitaxial layer.
7. semiconductor magnetic sensor as described in claim 1, it is characterized in that：The semiconductor base is micro-or nano size；
Preferably, the length of the semiconductor base is 10 microns~500 microns, width is 5 microns~100 microns, thickness
It is 1 micron~50 microns.
8. semiconductor magnetic sensor as claimed in claim 7, it is characterized in that：Source electrode, drain electrode and the grid is micro-nano
Size；
Preferably, the length and width of the source electrode, drain electrode and grid is 1 micron~200 microns, thickness is nanoscale.
9. the preparation method of the semiconductor magnetic sensor as described in any claim in claim 1 to 8, it is characterized in that：Packet
Include following steps：
Source electrode pattern is prepared using ultraviolet photolithographic method on a semiconductor substrate, then using magnetically controlled sputter method in the source electrode figure
Case surface prepares source electrode；
Drain pattern is prepared using ultraviolet photolithographic method on a semiconductor substrate, then using magnetically controlled sputter method in the drain electrode figure
Case surface prepares drain electrode；
Gate pattern is prepared using ultraviolet photolithographic method on a semiconductor substrate, is then revolved using pulse laser method or chemistry
One grid material of coating method growth regulation；Then, using two grid material of magnetically controlled sputter method growth regulation.
10. the application method of the semiconductor magnetic sensor as described in any claim in claim 1 to 8, it is characterized in that：Packet
Include following steps：
(1) fixed externally-applied magnetic field is applied to the second grid of semiconductor magnetic sensor, it is brilliant tests field-effect in the Magnetic Sensor
The electric signal of body pipe under certain testing situations changes the size of externally-applied magnetic field, obtains a series of in a certain fixed externally-applied magnetic field
Under reference electrical signal；
(2) it keeps identical with the test condition in step (1), tests the practical telecommunications of field-effect transistor in the Magnetic Sensor
Number, which is compared with the reference electrical signal obtained in step (1), same reference electrical signal institute is right
The magnetic field value that the externally-applied magnetic field answered as actually measures.
Priority Applications (1)
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| CN201711455904.3A CN108151768B (en) | 2017-12-28 | Semiconductor magnetic sensor, preparation method and use method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711455904.3A CN108151768B (en) | 2017-12-28 | Semiconductor magnetic sensor, preparation method and use method thereof |
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| Publication Number | Publication Date |
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| CN108151768A true CN108151768A (en) | 2018-06-12 |
| CN108151768B CN108151768B (en) | 2024-07-05 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110783450A (en) * | 2019-10-22 | 2020-02-11 | 深圳第三代半导体研究院 | Magnetic field sensor based on gallium nitride/aluminum gallium nitrogen heterojunction |
| CN111175675A (en) * | 2019-12-30 | 2020-05-19 | 电子科技大学 | Magnetic field sensor based on organic field effect transistor and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110783450A (en) * | 2019-10-22 | 2020-02-11 | 深圳第三代半导体研究院 | Magnetic field sensor based on gallium nitride/aluminum gallium nitrogen heterojunction |
| CN111175675A (en) * | 2019-12-30 | 2020-05-19 | 电子科技大学 | Magnetic field sensor based on organic field effect transistor and preparation method thereof |
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