KR101862076B1 - Method for manufacturing sensor having micro heater - Google Patents

Abstract

A method of manufacturing a sensor having a micro heater is disclosed. Method of manufacturing a high electron mobility transistor structure sensor having a micro heater, the first substrate, to be formed on the first substrate a buffer layer of GaN-based formed on, the GaN layer formed on the buffer layer, the GaN layer Al _x A _single layer selected from the group consisting of a Ga _{1 - x} N layer, an In _x Al _{1 - x} N layer and an In _x Al _y Ga _{1 - x - y} N layer, the Al _x Ga _{1 - x} N layer, In _x Al _{1 - x} N layer, and In _x Al _y Ga _{1 -x- y} N layer, and a source electrode and a drain electrode formed on one layer selected from the group consisting of In _x Al _y Ga _{1 -x- y} N layers, Providing a high electron mobility transistor structure having a layer of sensing material formed on the substrate; Forming a temporary bonding material on the source electrode, the drain electrode, and the sensing material layer, and bonding the second substrate; Forming a cavity structure or a micro hole structure on the third substrate and the third substrate and preparing a junction of the third substrate; Separating the first substrate from the buffer layer; Forming a micro-heater on the separated epi layer after the first substrate is separated; Bonding the third substrate to the buffer layer so that the micro heater is positioned in the cavity structure or hole of the third substrate after forming the micro heater structure; And separating the second substrate from the high electron mobility transistor structure after bonding the third substrate.

Description

TECHNICAL FIELD [0001] The present invention relates to a method of manufacturing a sensor having a micro heater,

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a gallium nitride sensor manufacturing method, and more particularly, to a method of manufacturing a sensor including a micro heater.

Gallium nitride (GaN) has a high energy band gap of 3.4 eV and an intrinsic carrier concentration of 10 ^-10 cm ^-3 at room temperature. Therefore, it can be used as a high-temperature, high-pressure, Can be operated, and has high durability.

In addition, GaN has a high lattice energy and a chemically stable structure, and thus has excellent chemical stability in a strong acid, base, and high humidity environment compared with an oxide semiconductor in the form of a thin film and a nano structure.

In particular, the AlGaN / GaN HEMT structure grown on GaN has a very high electron mobility at the interface between AlGaN and GaN due to the piezoelectric effect and spontaneous polarization due to lattice mismatch. -DEG (2-dimensional electron gas) layer, and the 2-DEG layer shows a current change very sensitive to the change of the amount of charge on the semiconductor surface. Therefore, it is possible to manufacture a sensor having a small size, low power, fast response speed, It is possible.

However, in order to grow a high-quality gallium nitride epitaxial film, the smaller the difference in lattice constant between the substrate and the epilayed film is, the better, but the GaN and AlN substrates are not only very expensive, but also small-sized substrates are available.

On the other hand, SiC substrates can be used up to 6 inch substrates, but the price of substrates is very high. In the case of Si, the cost is low and a large diameter wafer of 12 inches can be utilized. However, the lattice constant of the substrate and the gallium nitride epitaxial film There is a disadvantage in that it is difficult to grow an epi film of excellent quality.

For this reason, a large number of gallium nitride semiconductor devices are manufactured using a sapphire substrate, which is relatively cheap in terms of the substrate price and capable of utilizing a large-diameter wafer, but sapphire substrates have low thermal conductivity and are difficult to use under extreme environments such as high temperatures have.

Especially, it is necessary to control the temperature of sensor element when fabricating physical sensor, chemical sensor, biosensor, etc. using gallium nitride thin film, but it is difficult to manufacture low power consumption heater due to high heat capacity of substrate on which a gallium nitride thin film is grown .

Further, in order to reduce the thermal capacity of the sensor fabrication area, it is difficult to partially remove the substrate on which the gallium nitride thin film is grown. Thus, it is difficult to fabricate a gallium nitride sensor having a low-power heater.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a method for fabricating a high electron mobility transistor structure sensor having a micro heater.

It is another object of the present invention to provide a method of manufacturing a Schottky diode structure sensor having a micro heater.

According to another aspect of the present invention, there is provided a method of fabricating a high electron mobility transistor structure sensor including a micro-heater including a first substrate, a GaN buffer layer formed on the first substrate, A GaN layer formed on the GaN layer, a layer selected from the group consisting of an Al _x Ga _{1 - x} N layer, an In _x Al _{1 - x} N layer and an In _x Al _y Ga _{1 -x - y} N layer formed on the GaN layer, A source electrode and a drain electrode formed on one layer selected from the group consisting of the Al _x Ga _{1 - x} N layer, In _x Al _{1 - x} N layer and In _x Al _y Ga _{1 -x- y} N layer, Preparing a high electron mobility transistor structure having a sensing material layer formed in a region between the source electrode and the drain electrode; Forming a temporary bonding material on the source electrode, the drain electrode, and the sensing material layer, and bonding the second substrate; Forming a cavity structure or a micro hole structure on the third substrate and the third substrate and preparing a junction of the third substrate; Separating the first substrate from the buffer layer; Forming a micro-heater on the separated epi layer after the first substrate is separated; Bonding the third substrate to the buffer layer so that the micro heater is positioned in the cavity structure or hole of the third substrate after forming the micro heater structure; And separating the second substrate from the high electron mobility transistor structure after bonding the third substrate.

Here, the detection material layer may include one kind of layer selected from the group consisting of the Al _x Ga _{1 - x} N layer, In _x Al _{1 - x} N layer and In _x Al _y Ga _{1 -x- y} N layer A part of which may be formed in a recessed region made by etching.

Here, it is preferable that one kind of layer selected from the group consisting of the Al _x Ga _{1 - x} N layer, the In _x Al _{1 - x} N layer and the In _x Al _y Ga _{1 -x- y} N layer and the above- A detection sensitivity improving layer, a protective layer, or an insulating layer may be additionally formed.

Here, the first substrate may be made of any one material selected from the group consisting of sapphire, AlN, diamond, BN, SiC, and GaN.

Here, a sacrifice layer may be additionally formed between the first substrate and the GaN-based buffer layer.

Here, the sacrificial layer may be formed of a material having a lower energy bandgap than the first substrate and the GaN-based buffer layer.

Here, the x value of the Al _x Ga _{1 - x} N layer may be 0 <x? 1.

Here, the x value of the In _x Al _{1 - x} N layer may be 0 < x &lt; = 1.

Here, the x and y values of the In _x Al _y Ga _{1 -x- y} N layer may be 0 <x? 1, 0 <y? 1, 0 <(x + y)?

Here, on a layer selected from the group consisting of the Al _x Ga _{1 - x} N layer, In _x Al _{1 - x} N layer and In _x Al _y Ga _{1 -x- y} N layer, a layer having a thickness of 10 nm or less Lt; RTI ID = 0.0 &gt; GaN cap &lt; / RTI &gt;

Here, the temporarily bondable material may be a photoresist, a spin on glass (SOG), or a transfer tape.

Here, the step of bonding the second substrate may be performed by applying a pressure of 1.1 bar to 20 bar.

Here, the second substrate may be made of a material of Si, glass or polymer.

Here, the step of separating the first substrate may be performed by a laser lift-off or chemical lift-off process.

Here, the micro-heater may be made of Pt, Au, W, Pd, Mo, polysilicon or a material containing these metals.

Here, a protection layer formed of a group consisting of SiO ₂ , SiN _x, and Si ₃ N ₄ may be provided on the top of the micro-heater.

The third substrate may be made of a material such as Si, Ge, Al, W, Cr, Ni, Cu or an alloy thereof, amorphous AlN, amorphous SiC, graphite, nano carbon, or polymer.

The polymer may be selected from the group consisting of polycarbonate (PC), polyethylene naphthalate (PEN), polynorbornene, polyacrylate, polyvinyl alcohol, polyimide polyimide, polyimide, polyethylene terephthalate (PET), polyethersulfone (PES), polystyrene (PS), polypropylene (PP), polyethylene (PE), polyvinylchloride , Polyvinylidene fluoride (PVP), polyamide (PA), polybutylene tererephthalate (PBT), polymethyl methacrylate (PMMA), and polydimethylsiloxane One can be included.

Here, the step of separating the second substrate may be performed by using a resist remover for lithography, or by applying an etchant for SOG etching or heating at 80 to 200 캜.

According to another aspect of the present invention, there is provided a method of fabricating a Schottky diode structure sensor including a micro-heater, the method including fabricating a first substrate, a GaN buffer layer formed on the first substrate, GaN layer, an Al _x Ga _{1 - x} N layer, an In _x Al _{1 - x} N layer, and an In _x Al _y Ga _{1 -x- y} N layer formed on the GaN layer, , An ohmic contact electrode formed on one layer selected from the group consisting of the Al _x Ga _{1 - x} N layer, In _x Al _{1 - x} N layer and In _x Al _y Ga _{1 -x- y} N layer, and Preparing a Schottky diode structure having a sensing material layer that forms a Schottky contact and an ohmic contact electrode connected thereto; Forming a temporarily bondable material over the Schottky diode structure and bonding the second substrate; Forming a cavity structure or a micro hole structure on the third substrate and the third substrate and preparing a junction of the third substrate; Separating the first substrate from the buffer layer; Forming a micro-heater on the separated epi layer after the first substrate is separated; Bonding the third substrate to the buffer layer so that the micro heater is positioned in the cavity structure or hole of the third substrate after forming the micro heater structure; And bonding the third substrate and separating the second substrate from the Schottky diode structure.

In the method of manufacturing a sensor having a micro heater according to the present invention, a substrate on which a gallium nitride thin film is grown may be removed and a micro heater structure may be fabricated to fabricate a gallium nitride sensor having a micro heater having a low power consumption .

In addition, by using the newly developed substrate removal process (laser lift-off, chemical lift-off), the epitaxial growth substrate can be separated and the substrate can be reused to reduce the device manufacturing cost.

After the micro-heater structure is manufactured at the portion where the epi-growth substrate is removed, the sensor structure is transferred again to the third substrate on which the cavity structure is fabricated, and the temporary substrate is removed. Thus, The sensor can be effectively manufactured.

1 is a cross-sectional view of a GaN-based HEMT structure sensor having a micro heater according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view of a gallium nitride-based multi-epitaxial layer for HEMT structure grown on a first substrate according to an embodiment of the present invention.
3 is a cross-sectional view of an HEMT structure formed on an epi layer formed on a first substrate according to an embodiment of the present invention.
4 is a cross-sectional view of a HEMT structure after bonding a second substrate according to an embodiment of the present invention.
5 is a diagram illustrating a process of separating a first substrate into a laser lift-off process according to an embodiment of the present invention.
6 is a cross-sectional view of the micro-heater structure after the first substrate is separated according to an embodiment of the present invention.
FIG. 7 is a cross-sectional view of a cavity structure after bonding a third substrate according to an embodiment of the present invention.
8 is an exemplary view illustrating a process of separating a second substrate from a HEMT structure according to an embodiment of the present invention.
9 is a cross-sectional view of a GaN-based HEMT structure sensor having a micro-heater according to an embodiment of the present invention.
10 is a cross-sectional view of a GaN-based Schottky structure sensor having a micro heater according to another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. It should be understood, however, that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In the drawings, the same reference numbers are used throughout the specification to refer to the same or like parts.

Throughout this specification, when a member is "on " another member, it includes not only when the member is in contact with the other member, but also when there is another member between the two members.

Throughout this specification, when an element is referred to as "including " an element, it is understood that the element may include other elements as well, without departing from the other elements unless specifically stated otherwise. The word " step (or step) "or" step "used to the extent that it is used throughout the specification does not mean" step for.

The use of terms such as " comprising "or" comprising "in this specification should not be construed as necessarily including the various elements or steps described in the specification, including some or all of the steps Or may further include additional components or steps.

Furthermore, terms including ordinals such as first, second, etc. used in this specification can be used to describe various elements, but the elements should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be referred to as a second component, and similarly, the second component may also be referred to as a first component.

Hereinafter, a method of manufacturing a sensor including a micro heater according to the present invention will be described in detail with reference to the drawings.

1 is a cross-sectional view of a GaN-based HEMT structure sensor having a micro heater according to an embodiment of the present invention.

1, a GaN-based HEMT structure sensor having a micro heater according to an embodiment of the present invention includes a buffer layer (LT, HT-GaN) 10, a GaN layer 20, an AlGaN layer 30, 3 substrate 300, and at least one micro heater 400.

The AlGaN layer 30 may be composed of one layer selected from the group consisting of an Al _x Ga _{1 - x} N layer, an In _x Al _{1 - x} N layer and an In _x Al _y Ga _{1 -x- y} N layer have.

For example, Al _x Ga _{1 - x} N layer is the value of _x may be _{0 <x≤1, In x Al 1} - x N layer value of _x may be a, 0 <x≤1, In _x Al The x and y values of the _y Ga _{1 -x- y} N layer may be 0 <x? 1, 0 <y? 1, 0 <(x + y)?

In addition, on _one layer selected from the group consisting of an Al _x Ga _{1 - x} N layer, an In _x Al _{1 - x} N layer and an In _x Al _y Ga _{1 -x- y} N layer, a GaN cap layer may be additionally formed.

The micro-heater 400 may be composed of Pt, Au, W, Pd, Mo, polysilicon, or a material containing these metals. For example, a protective layer formed of SiO ₂ , SiN _x, and Si ₃ N ₄ may be provided on the top of the microheater 400.

The third substrate 300 may be made of a material such as Si, Ge, Al, W, Cr, Ni, Cu or an alloy thereof, amorphous AlN, amorphous SiC, graphite, nanocarbon, or polymer.

The AlGaN layer 30 may be formed with a detection material layer SM formed in a partial region between the source electrode S and the drain electrode D, the source electrode S and the drain electrode D. [

The detection material layer (SM) includes a part of one kind of layer selected from the group consisting of an Al _x Ga _{1 - x} N layer, an In _x Al _{1 - x} N layer and an In _x Al _y Ga _{1 -x- y} N layer And may be formed in an etched recess region.

In addition, one kind of layer selected from the group consisting of Al _x Ga _{1 - x} N layer, In _x Al _{1 - x} N layer and In _x Al _y Ga _{1 - x - y} N layer and the above- A detection sensitivity improving layer, a protective layer, or an insulating layer may be additionally formed.

In addition, at least one microheater 400 may be formed on the buffer layer 10 and may be housed by a third substrate 300 on which a cavity is formed.

The manufacturing process of the gallium nitride-based HEMT structure sensor having the micro heater according to the embodiment of the present invention will be briefly described below.

A sacrificial layer (110) and a buffer layer (10) for substrate removal are grown on a heterogeneous substrate, and an epitaxial thin film having a multilayered epitaxial thin film structure for fabricating a gallium nitride based HEMT structure having a high electron mobility And a sensor having a HEMT structure can be fabricated.

A protective layer is deposited on top of the sensor structure and temporarily bonded to the second substrate 200. Thereafter, the first substrate 100 is separated using a substrate removal process (laser lift-off, chemical lift-off), and then a heater structure can be manufactured where the first substrate 100 is separated. The third substrate 300 and the sensor fabrication substrate are bonded to each other so that the region where the heater 400 is fabricated may be located inside the cavity structure on the third substrate 300 on which the cavity structure is fabricated, The second substrate 200 may be removed to fabricate a gallium nitride-based HEMT structure sensor provided with the heater 400.

A process of fabricating a GaN-based HEMT structure sensor having a micro heater according to an embodiment of the present invention will be described in detail with reference to FIGS. 2 to 9 below.

FIG. 2 is a cross-sectional view of a GaN-based multi-epitaxial layer for HEMT structure grown on a first substrate according to an embodiment of the present invention. FIG. 3 is a cross- Sectional view after fabricating the structure.

2 and 3, a GaN-based buffer layer 10 formed on the first substrate 100, a GaN layer 20 formed on the buffer layer 10, a GaN-based buffer layer 10 formed on the GaN- Layer 30 is a layer 30 selected from the group consisting of an Al _x Ga _{1 - x} N layer, an In _x Al _{1 - x} N layer and an In _x Al _y Ga _{1 -x- y} N layer formed on the layer 20 ) Formed on one layer 30 selected from the group consisting of Al _x Ga _{1 - x} N layer, In _x Al _{1 - x} N layer and In _x Al _y Ga _{1 - x - y} N layer, A high electron mobility transistor structure including an electrode S and a drain electrode D and a detection material layer SM formed in a partial region between the source electrode S and the drain electrode D can be prepared .

Here, the first substrate 100 may be made of any one material selected from the group consisting of sapphire, AlN, diamond, BN, SiC, and GaN.

For example, a sacrificial layer 110 and a GaN-based buffer layer 110 are formed on a substrate such as sapphire, AlN, diamond, BN, SiC, or GaN having a larger energy bandgap than laser light used in a laser lift- (10) can be grown.

Since, GaN-based HEMT structures for making _{(GaN, Al x Ga 1 -} x N) can be grown multiple layers. For example, the GaN layer 20 and the Al _x Ga _{1 - x} N layer 30 may be grown, and a GaN cap may be further grown thereon.

A sacrificial layer 110 may be further formed between the first substrate 100 and the GaN-based buffer layer 10. Here, the sacrificial layer 110 may be made of a material having a lower energy band gap than the first substrate 100 and the GaN-based buffer layer 10. However, the sacrificial layer 110 may not be included. In this case, the buffer layer 10 may serve as the sacrificial layer 110.

A source electrode S and a drain electrode D on which an ohmic contact can be made are formed on the grown GaN epitaxial multilayer and a source electrode S and a drain electrode D A sensing material layer (SM) for detecting a substance to be detected can be formed between the sensor chip and the sensor chip.

A recess process may be included in the formation of the detection material of the sensor and the third layer P1 120 may be formed between the detection material layer SM and the epi layer for the purpose of improving the detection sensitivity, .

FIG. 4 is a cross-sectional view of a HEMT structure after bonding a second substrate on the HEMT structure according to an embodiment of the present invention. FIG. 5 illustrates a process of separating a first substrate into a laser lift-off process according to an embodiment of the present invention Fig.

Referring to FIG. 4, a protective layer may be formed on the fabricated HEMT sensor structure, and may be bonded to the second substrate 200 using a bonding film 210.

It is possible to bond the second substrate 200 after forming a material temporarily bondable on the source electrode S, the drain electrode D and the detection material layer SM. Here, the temporarily bondable material may be a photoresist, a spin on glass (SOG), or a transfer tape.

Also, the process of bonding the second substrate 200 may be performed by applying a pressure of 1.1 bar to 20 bar.

In addition, the second substrate 200 may be made of a material of Si, glass, or polymer. Here, the polymer may be a polycarbonate (PC), a polyethylene naphthalate (PEN), a polynorbornene, a polyacrylate, a polyvinyl alcohol, a polyimide, , Polyethylene terephthalate (PET), polyethersulfone (PES), polystyrene (PS), polypropylene (PP), polyethylene (PE), polyvinylchloride ), Polyamide (PA), polybutylene tererephthalate (PBT), polymethyl methacrylate (PMMA), and polydimethylsiloxane (PDMS). .

Referring to FIG. 5, the first substrate 100 may be separated from the buffer layer 10. More specifically, the laser lift-off process may be performed to separate the gallium nitride epitaxial layer from the first substrate 100, and then the first substrate (wide band gap substrate) may be recovered and reused. That is, the process of separating the first substrate 100 may be performed by a laser lift-off process or a chemical lift-off process.

FIG. 6 is a cross-sectional view of a micro-heater structure after a first substrate is separated according to an embodiment of the present invention. FIG. 7 is a cross- 8 is a view illustrating a process of separating a second substrate from a HEMT structure according to an embodiment of the present invention. FIG. 9 is a cross-sectional view illustrating a structure of a third substrate according to an embodiment of the present invention. Sectional view of a gallium nitride-based HEMT structure sensor provided with another micro heater.

Referring to FIG. 6, the micro heater 400 may be formed on the separated epi layer of the first substrate 100. Here, the micro-heater 400 may be composed of Pt, Au, W, Pd, Mo, polysilicon, or a material containing these metals. For example, a protective layer formed of SiO ₂ , SiN _x, and Si ₃ N ₄ may be provided on the top of the microheater 400. That is, the structure of the micro heater 400 can be formed on the side where the first substrate 100 is removed.

A cavity structure or a micro hole structure may be formed on the third substrate 300 and the third substrate 300 to prepare the third substrate 300 for bonding.

Referring to FIG. 7, after forming the structure of the micro heater 400, the third substrate 300 is bonded to the buffer layer 400 so that the micro heater 400 can be positioned in the cavity structure or the hole of the third substrate 300. (10). That is, the gallium nitride epitaxial layer may be bonded to the third substrate 300, which is fabricated to have a cavity structure on the micro heater 400 structure.

Referring to FIG. 8, after the third substrate 300 is bonded, the second substrate 200 may be separated from the high electron mobility transistor structure. For example, the process of separating the second substrate 200 can be performed by using a resist remover for lithography, or by applying an etchant for SOG etching or heating at 80 ° C to 200 ° C.

Accordingly, the second substrate 200 and the bonding film may be removed to fabricate a sensor having a HEMT structure including the micro heater 400.

9 is a cross-sectional view of a HEMT structure sensor fabricated using a third substrate 300 having microholes. That is, the third substrate 300 may have a micro hole as well as a cavity structure.

10 is a cross-sectional view of a GaN-based Schottky structure sensor having a micro heater according to another embodiment of the present invention.

Referring to FIG. 10, a gallium nitride-based Schottky structure sensor having a micro heater can be manufactured through the following process. However, the detailed description can be understood with reference to Figs. 2 to 8 described above. That is, the Schottky structure sensor is a Schottky structure sensor in which a gallium nitride-based HEMT structure is replaced with a Schottky structure sensor, and the technical features are the same, and a detailed description thereof will be omitted. However, it goes without saying that the scope of the present invention also affects the manufacturing method of the gallium nitride-based Schottky structure sensor.

A GaN buffer layer 10 formed on the first substrate 100; a GaN layer 20 formed on the buffer layer 10; an Al (Al) layer formed on the GaN layer 20; _x Ga _{1 -x} N layer, an In _x Al _{1 - x} N layer and an In _x Al _y Ga _{1 -x- y} N layer, a layer 30 selected from the group consisting of Al _x Ga _{1 - x} Ohmic metal electrodes 610, 612, and 632 formed on one layer 30 selected from the group consisting of an In _x Al _{1 - x} N layer, an In _x Al _y Ga _{1 -x- y} N layer, 620), and a Schottky diode sensing structure (SBSM) 500 and an ohmic contact electrode 620 connected thereto.

The second substrate 200 may be bonded after forming a temporarily bondable material over the Schottky diode structure.

A cavity structure or a micro hole structure may be formed on the third substrate 300 and the third substrate 300 to prepare for bonding the third substrate.

The first substrate 100 can be separated from the buffer layer 10 and the micro-heater 400 can be formed on the separated epi layer after the first substrate 100 is separated .

After forming the structure of the micro heater 400, the third substrate 300 may be bonded to the buffer layer 10 so that the micro heater may be positioned in the cavity structure or the hole of the third substrate 300.

After bonding the third substrate 300, the second substrate 200 may be separated from the Schottky diode structure.

Accordingly, the Schottky structure sensor having the micro heater can be manufactured by adopting the SBSM (SBSM) 500. A detection sensitivity improving layer, a protective layer or an insulating layer 40 may be additionally formed between the sort key contact detecting material 500

In order to fabricate a gallium nitride sensor having a micro heater having a low power consumption, the substrate on which the gallium nitride thin film is grown is removed to fabricate a micro heater structure. .

In addition, a HEMT structure for fabricating a sensor element or a multilayer of gallium nitride series for a Schottky structure can be grown on a different substrate.

In addition, a HEMT structure or a schottky structure sensor structure for a sensor can be fabricated in a grown gallium nitride series multilayer.

Further, after the sensor fabrication process is completed, a protective layer for protecting the sensor may be deposited, and a low-cost substrate (second substrate) may be temporarily bonded thereon.

Further, for bonding, a suitable bonding material (Bonding tape, Photoresist, Spin on glass, etc.) may be used to facilitate removal of the second substrate later.

In addition, it is possible to reduce the device manufacturing cost by separating the epitaxially grown substrate using the newly developed substrate removal process (laser lift-off, chemical lift off) and reusing the substrate.

After the micro-heater structure is manufactured at the portion where the epi-growth substrate is removed, the sensor structure is transferred again to the third substrate on which the cavity structure is fabricated, and the temporary substrate is removed. Thus, The sensor can be effectively manufactured.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the present invention as defined by the following claims It can be understood that

10: buffer layer 20: GaN layer
30: AlGaN layer 40: insulating layer
100: first substrate 110: sacrificial layer
120: third layer (P1) 200: second substrate
210: bonding film 300: third substrate
310: bonding layer 400: micro-heater
500: Sortset contact detection substance 610, 620: Omnimal contact electrode
S: first electrode D: second electrode
SM: Detecting material layer

Claims (20)

A GaN buffer layer formed on the first substrate, a GaN layer formed on the buffer layer, an Al _x Ga _1-x N layer formed on the GaN layer, an In _x Al _1-x N layer, and an In _x Al _y Ga _1-xy N layer, the Al _x Ga _1-x N layer, the In _x Al _1-x N layer, and the In _x Al _y Ga _1-xy N layer Preparing a high electron mobility transistor structure having a source electrode and a drain electrode formed on one layer selected from the group consisting of a source electrode and a drain electrode, and a detection material layer formed in a partial region between the source electrode and the drain electrode;
Bonding a second substrate after forming a material that can be temporarily bonded to the source electrode, the drain electrode, and the sensing material layer;
Forming a cavity structure or a micro hole structure on the third substrate and the third substrate and preparing a junction of the third substrate;
Separating the first substrate from the buffer layer;
The first substrate is separated from the first substrate, and the first substrate is selected from the group consisting of the Al _x Ga _1-x N layer, the In _x Al _1-x N layer and the In _x Al _y Ga _1-xy N layer on which the detection material layer is formed Forming a micro-heater on an epi layer in which a first substrate, which is a surface opposite to one layer, is separated;
Bonding the third substrate to the buffer layer so that a micro heater is positioned in the cavity structure or hole of the third substrate after forming the micro heater structure; And
And bonding the third substrate and then separating the second substrate from the high electron mobility transistor structure. &Lt; Desc / Clms Page number 21 &gt; The method according to claim 1,
The detecting material layer may be formed by etching a part of one layer selected from the group consisting of the Al _x Ga _{1 - x} N layer, In _x Al _{1 - x} N layer and In _x Al _y Ga _{1 -x- y} N layer, Wherein the micro-heater is formed in a recess region that is formed by the micro-heater. The method according to claim 1,
And a detection sensitivity layer between the one kind of layer selected from the group consisting of the Al _x Ga _{1 - x} N layer, In _x Al _{1 - x} N layer and In _x Al _y Ga _{1 -x - y} N layer, Wherein an enhancement layer, a protective layer or an insulating layer is additionally formed on the surface of the micro-heater. The method according to claim 1,
Wherein the first substrate comprises:
Sapphire, AlN, diamond, BN, SiC, and GaN. 2. A method of manufacturing a high-electron mobility transistor structure sensor according to claim 1, wherein the micro-heater is made of a material selected from the group consisting of sapphire, AlN, diamond, BN, SiC and GaN. The method according to claim 1,
And a sacrificial layer is additionally formed between the first substrate and the GaN-based buffer layer. 6. The method of claim 5,
The sacrificial layer may include,
Wherein the buffer layer is made of a material having a lower energy bandgap than that of the first substrate and the buffer layer of the GaN system. The method according to claim 1,
The x value of the Al _x Ga _{1 - x} N layer,
0 &lt; x < / = 1. &Lt; / RTI &gt; The method according to claim 1,
The x value of the In _x Al _{1 - x} N layer,
0 &lt; x < / = 1. &Lt; / RTI &gt; The method according to claim 1,
The x and y values of the In _x Al _y Ga _{1 -x- y} N layer,
Wherein 0 <x? 1, 0 <y? 1, 0 <(x + y)? 1. The method according to claim 1,
A GaN cap having a thickness of 10 nm or less is formed on one layer selected from the group consisting of the Al _x Ga _{1 - x} N layer, In _x Al _{1 - x} N layer and In _x Al _y Ga _{1 -x- y} N layer Layer is further formed on the surface of the micro-heater. The method according to claim 1,
Wherein the temporarily bondable material is a &lt; RTI ID =
Wherein the substrate is a photoresist, a spin on glass (SOG), or a transfer tape. The method according to claim 1,
Wherein bonding the second substrate comprises:
Wherein the heat treatment is performed by applying a pressure of 1.1 bar to 20 bar. The method according to claim 1,
The second substrate may include:
Wherein the substrate is made of Si, glass, or a polymer material. The method according to claim 1,
Wherein the step of separating the first substrate comprises:
Wherein the annealing is performed by a laser lift-off or a chemical lift-off process. The method according to claim 1,
The micro-
Wherein the substrate is made of Pt, Au, W, Pd, Mo, polysilicon or a material containing these metals. The method according to claim 1,
And a protective layer formed on the top of the micro-heater, the protective layer being formed of a group consisting of SiO ₂ , SiN _x, and Si ₃ N ₄ . The method according to claim 1,
Wherein the third substrate comprises:
A high electron mobility transistor structure having a micro-heater, wherein the high-electron mobility transistor structure is made of a material of Si, Ge, Al, W, Cr, Ni, Cu or an alloy thereof, amorphous AlN, amorphous SiC, graphite, nano- A method of manufacturing a sensor. The method according to claim 13 or 17,
The polymer may be,
It is also possible to use polycarbonate (PC), polyethylene naphthalate (PEN), polynorbornene, polyacrylate, polyvinyl alcohol, polyimide, polyethylene terephthalate polyethylene terephthalate (PET), polyethersulfone (PES), polystyrene (PS), polypropylene (PP), polyethylene (PE), polyvinylchloride Wherein the film comprises any one selected from the group consisting of polyimide, polyamide, PA, polybutyleneterephthalate (PBT), polymethyl methacrylate (PMMA), and polydimethylsiloxane (PDMS) A method of fabricating a high electron mobility transistor structure sensor with a micro heater. The method according to claim 1,
The step of separating the second substrate comprises:
Wherein the method is carried out by using a resist remover for lithography or by applying an etchant for SOG etching or a heat of 80 占 폚 to 200 占 폚. A GaN buffer layer formed on the first substrate, a GaN layer formed on the buffer layer, an Al _x Ga _1-x N layer formed on the GaN layer, an In _x Al _1-x N layer, and an In _x Al _y Ga _1-xy N layer, the Al _x Ga _1-x N layer, the In _x Al _1-x N layer, and the In _x Al _y Ga _1-xy N layer Preparing a Schottky diode structure having an ohmic contact electrode formed on one layer selected from the group consisting of an ohmic contact electrode and an electrode material layer forming a Schottky contact;
Forming a temporarily bondable material over the Schottky diode structure and bonding the second substrate;
Forming a cavity structure or a micro hole structure on the third substrate and the third substrate and preparing a junction of the third substrate;
Separating the first substrate from the buffer layer;
The first substrate is separated from the first substrate, and the first substrate is selected from the group consisting of the Al _x Ga _1-x N layer, the In _x Al _1-x N layer and the In _x Al _y Ga _1-xy N layer on which the detection material layer is formed Forming a micro-heater on an epi layer in which a first substrate, which is a surface opposite to one layer, is separated;
Bonding the third substrate to the buffer layer so that a micro heater is positioned in the cavity structure or hole of the third substrate after forming the micro heater structure; And
And bonding the third substrate and separating the second substrate from the Schottky diode structure. &Lt; Desc / Clms Page number 20 &gt;

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