CN108054273B - Field effect transistor type magnetic sensor, preparation method and use method thereof - Google Patents
Field effect transistor type magnetic sensor, preparation method and use method thereof Download PDFInfo
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- 230000005669 field effect Effects 0.000 title claims abstract description 58
- 238000000034 method Methods 0.000 title claims description 38
- 238000002360 preparation method Methods 0.000 title description 14
- 239000004065 semiconductor Substances 0.000 claims abstract description 71
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 238000012360 testing method Methods 0.000 claims abstract description 26
- 238000001514 detection method Methods 0.000 claims abstract description 16
- 230000000694 effects Effects 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims description 36
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 16
- 239000010931 gold Substances 0.000 claims description 15
- 239000010936 titanium Substances 0.000 claims description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 11
- 229910052737 gold Inorganic materials 0.000 claims description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 9
- 238000000137 annealing Methods 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 238000000233 ultraviolet lithography Methods 0.000 claims description 6
- 239000011787 zinc oxide Substances 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 3
- 229910052782 aluminium Inorganic materials 0.000 claims 3
- 239000002105 nanoparticle Substances 0.000 claims 2
- 239000002033 PVDF binder Substances 0.000 claims 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims 1
- 230000003321 amplification Effects 0.000 abstract description 2
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 17
- 239000010409 thin film Substances 0.000 description 10
- 238000012546 transfer Methods 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000000696 magnetic material Substances 0.000 description 3
- 238000005459 micromachining Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 229910000519 Ferrosilicon Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- QUSDAWOKRKHBIV-UHFFFAOYSA-N dysprosium iron terbium Chemical compound [Fe].[Tb].[Dy] QUSDAWOKRKHBIV-UHFFFAOYSA-N 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000011160 research Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N35/00—Magnetostrictive devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N35/00—Magnetostrictive devices
- H10N35/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N35/00—Magnetostrictive devices
- H10N35/80—Constructional details
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- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
- Investigating Or Analyzing Materials By The Use Of Magnetic Means (AREA)
Abstract
The invention provides a field effect transistor type magnetic sensor, which is provided with a field effect transistor structure, and comprises a semiconductor substrate, a source electrode, a drain electrode and a grid electrode; the semiconductor substrate consists of a substrate layer and a semiconductor layer positioned on the surface of the substrate layer, the substrate layer and the semiconductor layer are electrically insulated, the substrate layer has magnetostriction effect, and the semiconductor layer has piezoelectric effect; when in a working state, the electric signal of the field effect transistor is changed when an external magnetic field acts on the basal layer, and the detection of the magnetic field is realized by testing the electric signal. The magnetic sensor has a simple structure, and can realize high-sensitivity magnetic field detection due to the signal amplification effect of the field effect transistor.
Description
Technical Field
The invention relates to a magnetic field detection technology, in particular to a field effect transistor type magnetic sensor, a preparation method and a use method thereof.
Background
The magnetic sensor is an important component of the sensor, and is a sensor for converting a magnetic signal into other information output in a required form such as an electric signal. Through the development of the last century, magnetic sensors have played an increasingly important role in various aspects of human social life, with billions of magnetic sensors being put into use worldwide each year. Along with the improvement of magnetic sensors, various industries put forward higher and higher requirements on the magnetic sensors, especially the detection precision is required to be higher and higher, and meanwhile the application range is required to be wider and wider, so that the application field is further widened, and the requirements of practical application are met. Therefore, having high detection accuracy and wide use range is one of the new development directions of magnetic sensors, and has also received increasing attention from researchers.
Currently, the more common magnetic sensors mainly include the following types: hall (Hall) sensors, fluxgate and current-sensing magnetic sensors, magnetoresistive sensors, etc. From the current state of research, the detection accuracy and the measurement range of the magnetic sensor at room temperature are always the same. Therefore, it is still a challenge to prepare a magnetic field sensor that satisfies both high detection accuracy and enables a wide detection range, and it is one of the directions of efforts to find a new magnetic sensor.
Disclosure of Invention
In view of the above-mentioned state of the art, the present invention provides a magnetic sensor having a field effect transistor structure, including a semiconductor substrate, and a source electrode, a drain electrode and a gate electrode electrically connected to the semiconductor substrate; the semiconductor substrate consists of a substrate layer and a semiconductor layer positioned on the surface of the substrate layer, the substrate layer and the semiconductor layer are electrically insulated, the substrate layer has magnetostriction effect, and the semiconductor layer has piezoelectric effect.
When the magnetic field sensor is in a working state, an external magnetic field acts on the basal layer, because of magneto-electric coupling effect of the magnetostrictive material and the piezoelectric material, stress or strain generated by the magnetostrictive material is transferred to the semiconductor layer, and electric charge is generated by the piezoelectric material of the semiconductor layer due to the piezoelectric effect, so that the concentration of carriers in a channel of the field effect transistor is changed, the electric signal of the field effect transistor is caused to be changed, and the detection of the external magnetic field is realized by testing the electric signal.
The semiconductor substrate is the semiconductor substrate in the field effect transistor.
The substrate layer has magnetostriction effect, namely the substrate layer material is a magnetostriction material, and the type of the magnetostriction material is not limited; preferably, the substrate layer material has a large magnetostriction coefficient to improve detection sensitivity; as a further preferable mode, the base layer material is compounded by adopting a magnetostrictive material with high saturation field and large magnetostriction coefficient and an amorphous soft magnetic material with large forced magnetostriction coefficient so as to realize wide-range magnetic field detection at the same time. The magnetostrictive materials with high saturation field and large magnetostriction coefficient include but are not limited to iron gallium (FeGa) or terbium dysprosium iron (TeDyFe) and the like; the amorphous soft magnetic material with large magnetostriction coefficient comprises but is not limited to ferrosilicon boron (FeSiB) or cobalt ferrosilicon (CoFeSi) and the like.
As a further preferred aspect, the substrate layer is made of a flexible magnetostrictive material, such as a flexible nickel foil, and the semiconductor layer is a thin film layer with a low thickness on the flexible magnetostrictive material, and the source electrode, the drain electrode and the gate electrode are made of thin film materials with low thickness, so that the substrate layer can be deformed by stretching, twisting, folding, and the like, thereby meeting the requirements of the flexible application field, such as application to wearable devices.
The semiconductor layer has a piezoelectric effect, that is, the semiconductor material is a piezoelectric material, and the type thereof is not limited, and includes zinc oxide, gallium nitride, and the like.
The base layer and the semiconductor layer are electrically insulated, and as one implementation, an insulating layer, such as an alumina thin film layer, is disposed between the base layer and the semiconductor layer.
The source electrode is the source electrode in the field effect transistor, and the source electrode is not limited in material and comprises a metal material and the like; preferably, the source electrode is made of a gold (Au) thin film material or a titanium (Ti) thin film material.
The drain electrode is the drain electrode in the field effect transistor, and the materials are not limited, and comprise metal materials and the like; preferably, the drain electrode is made of a gold (Au) thin film material or a titanium (Ti) thin film material.
The electric signal of the field effect transistor includes, but is not limited to, source-drain current, channel electron mobility, and the like of the field effect transistor.
The invention also provides a method for preparing the field effect transistor type magnetic sensor, which comprises the following steps:
(1) Preparation of semiconductor substrate of field effect transistor
Growing a semiconductor material on the basal layer by adopting a magnetron sputtering method;
(2) Source electrode preparation of field effect transistor
Preparing a source electrode on a semiconductor substrate through a micromachining process, preferably preparing a source electrode pattern by adopting an ultraviolet lithography method, and then preparing a source electrode on the surface of the source electrode pattern by adopting a magnetron sputtering method; as a further preference, the source is prepared followed by a rapid annealing heat treatment to further ensure ohmic contact is formed;
(3) Drain preparation of field effect transistor
Preparing a drain electrode on a semiconductor substrate through a micromachining process, preferably preparing a drain electrode pattern by adopting an ultraviolet lithography method, and then preparing a drain electrode on the surface of the drain electrode pattern by adopting a magnetron sputtering method; as a further preference, the drain electrode is prepared followed by a rapid annealing heat treatment to further ensure ohmic contact is formed;
(4) Gate preparation of field effect transistor
Preparing a grid electrode on a semiconductor substrate through a micromachining process, preferably preparing a grid electrode pattern by adopting an ultraviolet lithography method, and then growing a grid electrode material by adopting a pulse laser, chemical spin coating or a magnetron sputtering method; as a further preference, the gate is prepared followed by a rapid annealing heat treatment to further ensure the formation of schottky contacts;
the application method of the field effect transistor type magnetic sensor comprises the following steps:
(1) Applying a fixed external magnetic field to a basal layer of a magnetic sensor, testing electric signals of a field effect transistor in the magnetic sensor under certain test conditions, such as an output characteristic curve, a transfer characteristic curve and the like, and changing the magnitude of the external magnetic field to obtain a series of reference electric signals under a certain fixed external magnetic field;
(2) And (3) testing the actual electric signal of the field effect transistor in the magnetic sensor under the same test conditions as those in the step (1), and comparing the actual electric signal with the reference electric signal obtained in the step (1), wherein an external magnetic field corresponding to the same reference electric signal is the actual measured magnetic field value.
In summary, the invention adopts a field effect transistor structure to form a novel magnetic sensor, through transistor structure design, a semiconductor substrate is designed to be composed of a semiconductor layer made of piezoelectric materials and a substrate layer made of magnetostrictive materials, when in a working state, an external magnetic field acts on the substrate layer, and due to the magnetostrictive effect, the external magnetic field generates mechanical motion and acts on the semiconductor layer, the concentration of carriers in a channel of the field effect transistor is changed under the piezoelectric effect, the electric signal parameters of the field effect transistor are changed, and the detection of the magnetic field is realized by testing the electric signal. In addition, the magnetic sensor combines the signal amplification function of the field effect transistor, realizes the magnetic field detection with high sensitivity, and particularly when a material with high saturation field and large magnetostriction coefficient and an amorphous soft magnetic material with large forced magnetostriction coefficient are adopted as a substrate layer material, the magnetic sensor with high detection precision and wide detection range can be manufactured, and the detectable external magnetic field range is from a NaTesla (nT) magnitude to a Tesla (T) magnitude, thereby having good application prospect in the technical field of magnetic sensors. In addition, when the substrate layer is made of a flexible magnetostrictive material, the semiconductor layer is a thin film layer with low thickness on the flexible magnetostrictive material, and the source electrode, the drain electrode and the gate electrode are made of thin film materials with low thickness, the semiconductor substrate can be deformed in stretching, twisting, folding and the like, so that the requirements of the flexible application field can be met, and the semiconductor substrate can be applied to wearable equipment and the like.
Drawings
Fig. 1 is a schematic structural view of a flexible magnetic sensor in an embodiment of the present invention.
Detailed description of the preferred embodiments
The invention is further elucidated below in connection with the drawings and the examples. It is to be understood that these examples are for illustration of the invention only and are not intended to limit the scope of the invention.
The reference numerals in fig. 1 are: source electrode 1, gate electrode 2, drain electrode 3, semiconductor layer 4, and base layer 5.
Example 1:
in this embodiment, the structure of the magnetic sensor is shown in fig. 1. The magnetic sensor has a field effect transistor structure, and is composed of a semiconductor substrate, a source electrode 1, a drain electrode 3, and a gate electrode 2. The source electrode 1, the drain electrode 3 and the grid electrode 2 are positioned on the semiconductor substrate; wherein the semiconductor substrate is composed of an insulating base layer 5 and a semiconductor layer 4 on the base layer 5, and the base layer 5 has a magnetostriction effect and the semiconductor layer 4 has a piezoelectric effect.
The base layer 5 is composed of a flexible nickel foil having a thickness of 5 μm to 50 μm and an alumina film having a thickness of 10nm to 1000nm, and the alumina film is used for insulating the nickel foil. The semiconductor layer 4 is a zinc oxide thin film having a thickness of 10nm to 500 nm. The source electrode 1 is a gold film having a thickness of 2nm to 100nm, the drain electrode 3 is a titanium film having a thickness of 2nm to 100nm, and the gate electrode 4 is a gold film having a thickness of 2nm to 100 nm.
The preparation method of the magnetic sensor comprises the following steps:
(1) Preparation of a Flexible substrate layer
And growing an aluminum oxide film with the thickness of 10 nm-1000 nm on the surface of the flexible nickel foil with the thickness of 5-50 mu m by adopting an atomic layer deposition or magnetron sputtering method.
(2) Preparation of semiconductor layer
And growing a zinc oxide film with the thickness of 10 nm-500 nm on the surface of the flexible substrate layer by adopting a magnetron sputtering method.
(3) Source electrode preparation of field effect transistor
And (3) after the steps (1) and (2), obtaining a semiconductor substrate, preparing a rectangular pattern with the length of 5-500 mu m and the width of 5-500 mu m on the semiconductor substrate by adopting an ultraviolet photoetching method, then growing a gold (Au) film with the length of 2-100 nm on the surface of the rectangular pattern by adopting a magnetron sputtering method, and then carrying out rapid annealing heat treatment to form ohmic contact.
(4) Drain preparation of field effect transistor
Preparing rectangular patterns with the length of 5-500 mu m and the width of 5-500 mu m on a semiconductor substrate by adopting a ultraviolet photoetching method, then growing a titanium (Ti) film with the length of 2-100 nm on the surface of the rectangular patterns by adopting a magnetron sputtering method, and then carrying out rapid annealing heat treatment to form ohmic contact.
(5) Gate preparation of field effect transistor
Preparing rectangular grid patterns with the length of 5-50 mu m and the width of 5-50 mu m on a semiconductor substrate by adopting a ultraviolet photoetching method, then adopting a magnetron sputtering method to form a gold (Au) film with the length of 2-100 nm, and then carrying out rapid annealing heat treatment to form Schottky contact.
The magnetic sensor was tested as follows:
(1) When no external magnetic field is applied, testing the output characteristic curve of the field effect transistor in the semiconductor magnetic sensor under a certain test condition by adopting a semiconductor parameter instrument;
(2) Applying a fixed externally applied magnetic field to the underlayer of the semiconductor magnetic sensor, using the same semiconductor parametric apparatus as in step (1), and testing the reference output characteristic curve of the field effect transistor in the semiconductor magnetic sensor under the same test conditions as in step (1); it was found that the output characteristic of the field effect transistor of the magnetic sensor changed when an externally applied magnetic field was applied;
the magnitude of the external magnetic field is changed to obtain a series of reference output characteristic curves under a certain fixed external magnetic field.
In practical application, testing the actual output characteristic curve of the field effect transistor in the semiconductor magnetic sensor, wherein specific testing conditions are the same as the testing conditions in the step (1), so as to obtain the actual output characteristic curve; comparing the actual output characteristic curve with the output characteristic curve obtained in the step (2), wherein the external magnetic field corresponding to the same output characteristic curve is the actual measured magnetic field value.
Example 2:
in this embodiment, the structure of the magnetic sensor is substantially the same as that in embodiment 1, except that: the source electrode 1 is a titanium film with a thickness of 2nm to 100nm, the drain electrode 3 is a gold film with a thickness of 2nm to 100nm, the base layer 5 is a magnetostrictive material FeSiB film with a thickness of 2nm to 500nm, and the semiconductor layer 4 is a gallium nitride (GaN) film with a thickness of 2nm to 500 nm.
The preparation method of the magnetic sensor is substantially the same as that in example 1, except that: in the step (3), a magnetron sputtering method is adopted to grow a titanium film with the thickness of 2-100 nm on the rectangular source electrode pattern; in the step (4), a magnetron sputtering method is adopted to grow a gold film with the thickness of 2-100 nm on the rectangular drain electrode pattern; in the step (2), a magnetron sputtering method is adopted to prepare a gallium nitride (GaN) film with the thickness of 2-500 nm on the surface of the basal layer.
The semiconductor magnetic sensor was tested as follows:
(1) When no external magnetic field is applied, a semiconductor parameter instrument is adopted to test the transfer characteristic curve of the field effect transistor in the semiconductor magnetic sensor under certain test conditions;
(2) Applying a fixed externally applied magnetic field to the underlayer of the semiconductor magnetic sensor, using the same semiconductor parametric apparatus as in step (1), and testing the reference transfer characteristic curve, etc. of the field effect transistor in the semiconductor magnetic sensor under the same test conditions as in step (1); it was found that the transfer characteristic of the field effect transistor of the magnetic sensor changes when an externally applied magnetic field is applied;
the magnitude of the externally applied magnetic field is changed to obtain a series of reference transfer characteristic curves under a certain fixed externally applied magnetic field.
In practical application, testing the actual transfer characteristic curve of the field effect transistor in the semiconductor magnetic sensor, wherein specific testing conditions are the same as the testing conditions in the step (1), so as to obtain the actual transfer characteristic curve; comparing the actual transfer characteristic curve with the transfer characteristic curve obtained in the step (2), wherein the external magnetic field corresponding to the same transfer characteristic curve is the actual measured magnetic field value.
The foregoing embodiments have described the technical solutions and advantageous effects of the present invention in detail, and it should be understood that the foregoing embodiments are merely illustrative of the present invention and are not intended to limit the invention, and any modifications and improvements made within the principle of the present invention should be included in the protection scope of the present invention.
Claims (16)
1. A field effect transistor type magnetic sensor, characterized by: the semiconductor device comprises a semiconductor substrate, and a source electrode, a drain electrode and a grid electrode which are electrically connected with the semiconductor substrate; the semiconductor substrate consists of a substrate layer and a semiconductor layer positioned on the surface of the substrate layer, the substrate layer and the semiconductor layer are electrically insulated, the substrate layer has magnetostriction effect, and the semiconductor layer has piezoelectric effect;
when in a working state, an external magnetic field acts on the basal layer, an electric signal of the field effect transistor is changed, and the detection of the magnetic field is realized by testing the electric signal;
the substrate layer material is one or more than two of FeGa, teDyFe, feSiB and CoFeSi.
2. A field effect transistor magnetic sensor as in claim 1, wherein: the semiconductor layer material is zinc oxide, lead zirconate titanate or polyvinylidene fluoride.
3. A field effect transistor magnetic sensor as in claim 1, wherein: the source electrode is one or more of aluminum, gold and titanium.
4. A field effect transistor magnetic sensor as in claim 1, wherein: the drain electrode is one or more of aluminum, gold and titanium.
5. A field effect transistor magnetic sensor as in claim 1, wherein: the grid electrode is one or more of aluminum, gold and titanium.
6. A field effect transistor magnetic sensor as in claim 1, wherein: the semiconductor substrate is micro-nano-sized.
7. A field effect transistor type magnetic sensor as defined in claim 6, wherein: the thickness of the semiconductor substrate is 1-50 microns.
8. A field effect transistor type magnetic sensor as defined in claim 6, wherein: the source electrode, the drain electrode and the grid electrode are all micro-nano-sized.
9. A field effect transistor magnetic sensor as in claim 8, wherein: the length and width of the source electrode, the drain electrode and the grid electrode are 1-200 micrometers, and the thickness is nano-scale.
10. A field effect transistor magnetic sensor as in claim 1, wherein: the substrate layer material is flexible magnetostriction material.
11. A field effect transistor magnetic sensor as in claim 1, wherein: the electrical signal includes source-drain current and/or channel electron mobility.
12. A method of manufacturing a field effect transistor magnetic sensor as claimed in any one of claims 1 to 11, characterized by: the method comprises the following steps:
growing a semiconductor material on the basal layer by adopting a magnetron sputtering method;
preparing a source electrode pattern on a semiconductor substrate by adopting an ultraviolet lithography method, and then preparing a source electrode on the surface of the source electrode pattern by adopting a magnetron sputtering method;
preparing a drain electrode pattern on a semiconductor substrate by adopting an ultraviolet lithography method, and then preparing a drain electrode on the surface of the drain electrode pattern by adopting a magnetron sputtering method;
and preparing a grid pattern on the semiconductor substrate by adopting an ultraviolet lithography method, and then preparing the grid by adopting a pulse laser method, a chemical spin coating method or a magnetron sputtering method.
13. A method of manufacturing a field effect transistor type magnetic sensor as claimed in claim 12, wherein: the source electrode is prepared and then subjected to rapid annealing heat treatment.
14. A method of manufacturing a field effect transistor type magnetic sensor as claimed in claim 12, wherein: the drain electrode is prepared and then subjected to a rapid annealing heat treatment.
15. A method of manufacturing a field effect transistor type magnetic sensor as claimed in claim 12, wherein: the gate electrode is prepared and then subjected to a rapid annealing heat treatment.
16. A method of using a field effect transistor magnetic sensor as claimed in any one of claims 1 to 11, wherein: the method comprises the following steps:
(1) Applying a fixed external magnetic field to a basal layer of a magnetic sensor, testing an electric signal of a field effect transistor in the magnetic sensor under a certain test condition, and changing the magnitude of the external magnetic field to obtain a series of reference electric signals under a certain fixed external magnetic field;
(2) And (3) testing the actual electric signal of the field effect transistor in the magnetic sensor under the same test conditions as those in the step (1), and comparing the actual electric signal with the reference electric signal obtained in the step (1), wherein an external magnetic field corresponding to the same reference electric signal is the actual measured magnetic field value.
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| CN109920844A (en) * | 2019-03-26 | 2019-06-21 | 电子科技大学 | A kind of insulated-gate type piezoelectricity field effect transistor |
| CN110729396B (en) * | 2019-09-25 | 2022-09-16 | 郑州轻工业学院 | Magnetoelectric film sensor with self-amplification capability |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4520413A (en) * | 1982-04-13 | 1985-05-28 | Minnesota Mining And Manufacturing Company | Integrated magnetostrictive-piezoelectric-metal oxide semiconductor magnetic playback head |
| CN101866860A (en) * | 2010-05-26 | 2010-10-20 | 上海大学 | Preparation method of ZnO thin film field-effect transistor |
| CN103107205A (en) * | 2013-01-18 | 2013-05-15 | 大连理工大学 | Zinc-oxide-based metal oxide semiconductor (MOS) element on graphite substrate |
| CN103900726A (en) * | 2014-04-01 | 2014-07-02 | 国家纳米科学中心 | Piezoelectric temperature sensor |
| KR101552461B1 (en) * | 2015-05-11 | 2015-09-10 | 성균관대학교산학협력단 | Field effect transistor type sensor for measuring pressure and magnetic field |
| CN207781649U (en) * | 2017-12-28 | 2018-08-28 | 中国科学院宁波材料技术与工程研究所 | A kind of field effect transistor tubular type Magnetic Sensor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101305271B1 (en) * | 2012-03-22 | 2013-09-06 | 한국기계연구원 | Magnetoelectric composites |
-
2017
- 2017-12-28 CN CN201711456098.1A patent/CN108054273B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4520413A (en) * | 1982-04-13 | 1985-05-28 | Minnesota Mining And Manufacturing Company | Integrated magnetostrictive-piezoelectric-metal oxide semiconductor magnetic playback head |
| CN101866860A (en) * | 2010-05-26 | 2010-10-20 | 上海大学 | Preparation method of ZnO thin film field-effect transistor |
| CN103107205A (en) * | 2013-01-18 | 2013-05-15 | 大连理工大学 | Zinc-oxide-based metal oxide semiconductor (MOS) element on graphite substrate |
| CN103900726A (en) * | 2014-04-01 | 2014-07-02 | 国家纳米科学中心 | Piezoelectric temperature sensor |
| KR101552461B1 (en) * | 2015-05-11 | 2015-09-10 | 성균관대학교산학협력단 | Field effect transistor type sensor for measuring pressure and magnetic field |
| CN207781649U (en) * | 2017-12-28 | 2018-08-28 | 中国科学院宁波材料技术与工程研究所 | A kind of field effect transistor tubular type Magnetic Sensor |
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