CN113391246A - Method for improving performance of bulk acoustic wave driven micro-heterojunction magnetic sensor - Google Patents
Method for improving performance of bulk acoustic wave driven micro-heterojunction magnetic sensor Download PDFInfo
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Abstract
The invention discloses a method for improving the performance of a bulk acoustic wave driven micro-heterojunction magnetic sensor, which comprises the steps of constructing a bulk acoustic wave excited micro-magnetic sensor model based on micro-heterojunctions with different layers, measuring the output voltage of the bulk acoustic wave excited micro-magnetic sensor model based on the micro-heterojunctions with different layers under the disturbance condition of applying a direct current bias magnetic field and an alternating excitation magnetic field by adopting a steady state solving method and a small signal frequency domain solving method, calculating the magneto-electric coupling coefficient and the linearity of the bulk acoustic wave excited micro-magnetic sensor model based on the micro-heterojunctions with different layers, and determining the optimum disturbance condition of the direct current bias magnetic field and the alternating excitation magnetic field to carry out the optimal design of the sensor. According to the invention, by adjusting the number of layers of the sensor and optimizing the bias magnetic field condition, the output voltage under the resonance frequency can be improved, so that the magnetoelectric conversion efficiency of the ME heterostructure is improved, and finally, the design of the magnetic sensor with high sensitivity is realized.
Description
Technical Field
The invention relates to the technical field of micro magnetic sensor optimization design, in particular to a method for improving the performance of a micro heterojunction magnetic sensor driven by bulk acoustic waves.
Background
The Magnetoelectric (ME) heterojunction is composed of ferromagnetic and ferroelectric materials, and the ME coupling effect of the Magnetoelectric (ME) heterojunction is derived from the piezoelectric effect of a ferroelectric phase and the magnetostrictive effect of a ferromagnetic phase. ME heterojunctions have many advantages such as free energy transfer between magnetic and electric fields, large ME transfer coefficients. Many studies have been reported on the development and preparation of magnetic sensors with ME heterojunctions. However, since bulk materials have been used in ME heterojunctions before, the device dimensions are on the order of centimeters or larger, which is difficult to scale down. In contrast, the ME thin film based micro magnetic sensor is a research hotspot due to its small size, low cost, and easy integration with conventional CMOS processes. Magnetic sensors excited by sound waves are divided into two categories: surface Acoustic Waves (SAW) and Bulk Acoustic Waves (BAW). Although the SAW type sensor has a high static sensitivity, it can only operate in the mid-low frequency band of kHz or measure static/quasi-static magnetic field signals. However, BAW excitation based sensors have attracted considerable attention in recent years due to their high frequency characteristics, high power capacity and high energy conversion efficiency. Currently, many studies of BAW sensors by experimental methods have been reported in the literature. For example, Hui et Al reported a MEMS resonant magnetic field sensor based on AlN/FeGaB double-layer nano-plate resonators, Nan et Al deposited a single AlN/10 FeGaB/Al layer on this AlN CMR2O3To enhance ME coupling. Nan et al report an ME structure based on a nano-plate resonator with good resolution. Also, some work on BAW sensors by modeling and simulation methods has been reported. For example, Wu et al reported a flexible magnetic sensor based on a film bulk acoustic resonator, which established an equivalent circuit of a Mason model of the sensor and increased its sensitivity by selecting electrodes of giant magnetostrictive material with large frequency offset. Martos et al propose a novel circuit simulation model of a miniature magnetoelectric antenna and apply it to low power sensing. However, micro-magnetic transfer related to BAW driveSystematic research on structural simulation and performance optimization of sensors is still few, and a method for guiding structural design and performance optimization of an ME coupling device needs to be provided urgently.
Disclosure of Invention
In view of the above-mentioned deficiencies in the prior art, the present invention provides a method for improving the performance of bulk acoustic wave driven micro-heterojunction magnetic sensors.
In order to achieve the purpose of the invention, the invention adopts the technical scheme that:
the invention provides a method for improving the performance of a bulk acoustic wave driven micro-heterojunction magnetic sensor, which comprises the following steps:
s1, constructing a bulk acoustic wave excitation micro-magnetic sensor model based on micro heterojunction with different layer numbers;
s2, adopting a steady state solving method and a small signal frequency domain solving method to respectively measure the output voltage of the bulk acoustic wave excited micro-magnetic sensor model based on the micro heterojunction with different layers under the disturbance condition of applying a direct current bias magnetic field and an alternating excitation magnetic field;
s3, respectively calculating magneto-electric coupling coefficients of the bulk acoustic wave excited micro-magnetic sensor model based on the micro heterojunction with different layers according to the measured output voltage;
s4, fitting a variation curve of output voltage and a magneto-electric coupling coefficient of the bulk acoustic wave excited micro-magnetic sensor model based on the micro-heterojunction with different layers under the condition of applying a direct-current bias magnetic field, and determining the bulk acoustic wave excited micro-magnetic sensor model of the micro-heterojunction with the optimal layer number and the optimal bias magnetic field condition;
and S5, carrying out sensor optimization design according to the determined bulk acoustic wave excitation micro-magnetic sensor model of the micro heterojunction with the optimal number of layers and the optimal bias magnetic field condition.
Further, the step S1 specifically includes:
the method comprises the steps of constructing a bulk acoustic wave excitation micro-magnetic sensor model based on micro-heterojunctions with different layer numbers by adopting a finite element analysis method, wherein the bulk acoustic wave excitation micro-magnetic sensor model of the micro-heterojunctions comprises a magnetoelectric coupling micro-heterojunction formed by a magnetostrictive layer and a piezoelectric layer and an air domain outside the magnetoelectric coupling micro-heterojunction, the lower surface of the piezoelectric layer is grounded, the average voltage measured on the upper surface of the piezoelectric layer is used as an output voltage, and a bias magnetic field is applied in the air domain along the Y direction.
Further, the calculation formula of the magnetic-electric coupling coefficient is as follows:
wherein alpha isMEIs a magneto-electric coupling coefficient, Ez＝V/tpV is the average voltage value of the upper surface of the piezoelectric layer, tpIs the thickness of the piezoelectric layer HyA magnetic field in the Y direction.
Further, the method further comprises:
a1, respectively calculating the linearity of the bulk acoustic wave excited micro-magnetic sensor model based on the micro heterojunction with different layers according to the measured output voltage;
a2, fitting a change curve of the output voltage and the bias magnetic field of the bulk acoustic wave excited micro magnetic sensor model based on the micro heterojunction with different layers under the condition of applying the direct current bias magnetic field, and determining the bias magnetic field range according to the set linearity condition.
Further, the calculation formula of the linearity is as follows:
wherein, Delta YmaxThe maximum deviation between the calibration curve of the sensor and the fitted straight line is shown, and Y is the full-scale output.
Further, the method further comprises:
b1, fitting a change curve of the output voltage of the bulk acoustic wave excited micro-magnetic sensor model based on the micro heterojunction with different layers and the resonant frequency of the sensor under the condition of applying an alternating excitation magnetic field, and determining the influence of the magnetic field condition on the resonant frequency of the device and the resonant frequency of the sensor when the maximum output voltage exists;
b2, fitting a variation curve of output voltage and a magneto-electric coupling coefficient of a bulk acoustic wave excitation micro-magnetic sensor model of micro heterojunction with different layers at the resonant frequency of the sensor under the condition of applying an alternating excitation magnetic field, and determining an optimal direct-current bias magnetic field and a disturbance condition of applying the alternating excitation magnetic field;
b3, carrying out sensor optimization design according to the determined bulk acoustic wave excitation micro-magnetic sensor model of the micro heterojunction with the optimal layer number, the determined optimal direct current bias magnetic field and the disturbance condition of the applied alternating excitation magnetic field.
The invention has the following beneficial effects:
the method constructs a micron-sized high-frequency magnetic sensor model based on BAW magnetoelectric coupling (ME) micro heterojunction (AlN/FeGaB alternate) coupling, and analyzes the change rule of the sensor performance along with the structure of a device by simulating 2-5 layers of ME heterojunction; the performance of the magnetic sensor working under the direct current bias and the high-frequency alternating magnetic field is analyzed by using a steady state solving method and a small signal frequency domain solving method respectively; the output voltage of the magnetic sensor under the resonant frequency of the magnetic sensor can be controlled by adjusting the layer number of the device; in addition, the bias magnetic field applied to the ME heterojunction can be optimized, and a method for improving the sensitivity and the linearity of the device by optimizing the structure and the test condition of the device is realized.
Drawings
FIG. 1 is a schematic flow chart of a method of improving the performance of a bulk acoustic wave driven micro-heterojunction magnetic sensor in accordance with the present invention;
FIG. 2 is a schematic diagram of a 2-5 layer ME heterojunction model simulation of the present invention;
FIG. 3 is a schematic diagram of heterojunction stress characterization of the present invention; wherein (a) is the variation trend of stress in the ME heterostructure with different layers along with the increase of the direct current bias magnetic field; (b) a stress distribution cloud picture of a piezoelectric layer in the three-layer magnetic sensor is shown;
FIG. 4 is a schematic diagram of heterojunction strain characterization of the present invention; wherein (a) is the strain change curve of different layers along with the increase of the DC bias magnetic field; (b) a displacement distribution cloud plot of the magnetostrictive layer of the 2-5 heterostructure;
FIG. 5 is a schematic diagram of heterojunction output voltage analysis of the present invention; wherein (a) is an output voltage change curve of different layer number heterostructure along with the increase of the direct current bias magnetic field; (b) a voltage distribution cloud chart of the magnetostrictive layer;
FIG. 6 is a schematic diagram of the analysis of the heterojunction magnetoelectric coupling coefficient according to the present invention; wherein (a) is a curve of the ME coefficient changing with the number of layers of the heterostructure along with the increase of the DC bias magnetic field; (b) linearly fitting curves of different direct current magnetic fields to output voltage;
FIG. 7 is a schematic diagram of a sensor resonant frequency analysis of the present invention; wherein (a) is an admittance curve obtained by applying an alternating voltage to the piezoelectric layer of the magnetic sensor ME heterostructure of the three-layer heterostructure in the absence of a bias magnetic field; (b) when an alternating excitation magnetic field is applied, under different DC bias magnetic fields, a curve of voltage changing along with frequency is output;
FIG. 8 is a schematic diagram of the ME coefficient variation with DC bias magnetic field in the high frequency alternating magnetic field mode.
Detailed Description
The following description of the embodiments of the present invention is provided to facilitate the understanding of the present invention by those skilled in the art, but it should be understood that the present invention is not limited to the scope of the embodiments, and it will be apparent to those skilled in the art that various changes may be made without departing from the spirit and scope of the invention as defined and defined in the appended claims, and all matters produced by the invention using the inventive concept are protected.
The invention constructs a BAW excitation micro-magnetic sensor model with 2-5 layers of AlN/FeGaB alternate heterojunction, and the working frequency of the model can reach several GHz. The magnetic-electric coupling behavior of the magnetic sensor is simulated by simulating the action of a direct current bias and a high-frequency alternating magnetic field through a Finite Element (FEA), and the sensitivity and the linearity of the magnetic sensor are further analyzed and calculated. Finally, a method for improving the sensitivity and linearity of the BAW excited micro-magnetic sensor is obtained.
Example 1
As shown in fig. 1, an embodiment of the present invention provides a method for improving performance of a bulk acoustic wave driven micro-heterojunction magnetic sensor, including the following steps:
s1, constructing a bulk acoustic wave excitation micro-magnetic sensor model based on micro heterojunction with different layer numbers;
in an alternative embodiment of the invention, the sensitivity of BAW-based excitation of a magnetic sensor is characterized by the ME coefficient of the ME heterojunction. In order to clarify the coupling principle and interaction relationship of the device, it is necessary to couple the solid mechanical field, the magnetic field, and the electrostatic field to each other. A typical ME heterojunction is formed by coupling a stack of piezoelectric and magnetostrictive layers as shown in fig. 2.
The invention utilizes Commol Multiphysics software to simulate the magnetic sensor of 2-5 layers of ME heterojunction. In the 3D geometric model, a finite element analysis model of the ME heterojunction is constructed by a coupling magnetic field module, a solid mechanics module and an electrostatic module, and comprises a magnetostrictive layer, a piezoelectric layer and an air domain. Taking the three-layer cantilever structure as an example, a bias magnetic field is applied in the external air domain along the Y direction, the lower surface of the piezoelectric layer is grounded, and the left side and the right side of the model are respectively a fixed end and a free end.
A strain-charge constitutive relationship is established in the piezoelectric layer. This is because the changes produced in the piezoelectric layer are driven by the strain of the magnetostrictive layer. An applied magnetic field strains the magnetostrictive layer, which is then coupled to the piezoelectric layer. The relationship between strain, stress, electric field and electric displacement of the piezoelectric layer is expressed as:
D＝Dr+d33,p·TE+ε·E
in an electrostatic module, the electrical displacement and potential have the following constraints:
whereinAnd E, D denotes the electric field strength and the electric current density, SE、SE0、TEIs the strain, initial strain and stress of the piezoelectric layer, CEAnd d33,pRespectively representing the elastic matrix and the piezoelectric coefficient of the piezoelectric layer, DrRepresenting the residual electric flux density, ε, ρυAnd
representing the dielectric constant matrix, charge density and potential, respectively.
The magneto-elastic property of the magnetostrictive layer under the condition of a strong magnetic field is represented by nonlinear isotropy, and the relationship between stress and strain is established as follows:
wherein S isH、SH0、TH、
CHAnd u is the strain, initial strain, stress and initial stress of the magnetostrictive layer, the elastic stiffness coefficient and the displacement respectively, and shows that the strain relation of the magnetostrictive layer is related to the displacement gradient.
The relationship between the magnetic flux density (B) and the magnetic field strength (H) can be divided into two cases: firstly, the piezoelectric layer and the air domain are in nonmagnetic phase, and the constitutive equation is as follows: mu is B ═ mu0μrH.μ0And murSecond, the magnetostrictive layer adopts a nonlinear magnetization relationship: mu is B ═ mu0(H + M). M is the magnetizing current density.
S2, adopting a steady state solving method and a small signal frequency domain solving method to respectively measure the output voltage of the bulk acoustic wave excited micro-magnetic sensor model based on the micro heterojunction with different layers under the disturbance condition of applying a direct current bias magnetic field and an alternating excitation magnetic field;
in an optional embodiment of the invention, different direct-current bias magnetic fields are set in a bulk acoustic wave excitation micro-magnetic sensor model based on micro heterojunction with different layers, and the average voltage on a piezoelectric layer under different direct-current bias magnetic field conditions is measured by adopting a steady state solving method.
In order to analyze the output voltage change of the magnetic sensor in practical application, the invention utilizes a small signal frequency domain analysis method to simulate a high-frequency alternating magnetic field environment, different direct-current bias magnetic fields are arranged in a bulk acoustic wave excitation micro-magnetic sensor model based on micro-heterojunctions with different layers, meanwhile, alternating excitation magnetic field disturbance is applied, the whole external magnetic field is divided into a direct-current bias magnetic field and an alternating excitation magnetic field, and the small signal frequency domain solution method is adopted to measure the average voltage under the conditions of the different direct-current bias magnetic fields applying the alternating excitation magnetic field disturbance.
S3, respectively calculating magneto-electric coupling coefficients of the bulk acoustic wave excited micro-magnetic sensor model based on the micro heterojunction with different layers according to the measured output voltage;
in an optional embodiment of the present invention, the magnetoelectric coupling coefficient is used for characterizing the sensitivity of the magnetic sensor, and is a main parameter for evaluating the performance of the device, and the calculation formula is as follows:
wherein alpha isMEIs a magneto-electric coupling coefficient, Ez＝V/tpV is the average voltage value of the upper surface of the piezoelectric layer, tpIs the thickness of the piezoelectric layer HyIs a magnetic field in the Y direction, namely a direct current bias magnetic field.
S4, fitting a variation curve of output voltage and a magneto-electric coupling coefficient of the bulk acoustic wave excited micro-magnetic sensor model based on the micro-heterojunction with different layers under the condition of applying a direct-current bias magnetic field, and determining the bulk acoustic wave excited micro-magnetic sensor model of the micro-heterojunction with the optimal layer number and the optimal bias magnetic field condition;
in an alternative embodiment of the present invention,the invention simulates the properties of the ME heterostructure using a model built in finite element analysis software. In the external air region, a DC bias magnetic field H is applied in the Y directiondcAnd (3) analyzing the influence of the direct-current bias magnetic field on the stress, the strain and the output voltage of the 2-5-layer magnetic sensor respectively under the condition of 0-5000 Oe.
As shown in fig. 3(a), as the DC bias magnetic field is gradually increased, the stress of the piezoelectric layer is first rapidly increased and then reaches saturation. The maximum stress can be obtained for a three-layer ME heterostructure, which is about twice that of a two-layer structure. The inset plots show that the stress value of the piezoelectric layer is significantly greater than the magnetostrictive layer. This is because the upper and lower magnetostrictive layers press the middle piezoelectric layer in the Z direction under the same bias magnetic field. Stress distribution clouds of the piezoelectric layer in the three-layer magnetic sensor are shown in fig. 3(b), and due to the edge effect of the magnetic field, the stress distribution in the middle is more uniform than on both sides in the Y direction of the ME heterostructure. In addition, since the fixed end is constrained, the stress on the left side is significantly greater than the free end on the right side, and the maximum stress value is located at the edge of the fixed end.
As shown in fig. 4(a), the strain in the magnetostrictive layer is significantly larger than the strain in the piezoelectric layer, and the strain is largest in the two-layer structure. This is because the strain of the magnetostrictive layer is affected by the displacement gradient, and the change rule of the strain is consistent with the change rule of the displacement gradient. As can be seen from the cloud of displacement distribution in FIG. 4(b), the displacement deflection of the two-layer structure is the largest, which is about 10 of the three-layer structure2And (4) doubling.
As shown in fig. 5(a), the voltage value obtained on the piezoelectric layer increases with an increase in the magnetic field, and eventually tends to saturate. As can be seen from the voltage distribution cloud chart of the three-layer magnetic sensor in fig. 5(b), the voltage average value of the three-layer structure is the largest, the voltage at the middle part is uniformly distributed, and the voltage at the fixed end on the left side is greater than that at the free end on the right side.
And under different bias magnetic fields, the performance of the BAW magnetic sensor is represented by the electromagnetic coupling coefficient analysis of the ME heterostructure. Its coupling creates an induced charge on the surface of the piezoelectric layer, thereby creating an induced voltage. As shown in FIG. 6(a), the change law of the ME coefficient under the bias magnetic field (0-500 Oe) was analyzed. The ME coefficient increases and then decreases as the bias field increases. The sensor with the largest ME coefficient has the highest sensitivity, which also means the best magneto-electric conversion efficiency and the largest output voltage. The ME coefficients of the two-layer and three-layer ME heterostructures reach the lowest 0.52V/Oe-cm and the highest 2.81V/Oe-cm respectively near the bias magnetic field of 125 Oe. Therefore, the sensitivity of a magnetic sensor based on a three-layer ME heterostructure with a bias magnetic field of 125Oe is maximized. In conclusion, the analysis shows that the sensitivity of the magnetic sensor can be improved by optimizing the number of layers of the ME heterostructure and the bias magnetic field.
And S5, carrying out sensor optimization design according to the determined bulk acoustic wave excitation micro-magnetic sensor model of the micro heterojunction with the optimal number of layers and the optimal bias magnetic field condition.
Example 2
Embodiments of the present invention the method for improving the performance of a bulk acoustic wave driven micro-heterojunction magnetic sensor described in embodiment 1 further comprises:
a1, respectively calculating the linearity of the bulk acoustic wave excited micro-magnetic sensor model based on the micro heterojunction with different layers according to the measured output voltage;
in an alternative embodiment of the invention, the linearity δ is an important indicator describing the static behavior of the sensor. The invention takes the percentage of the maximum deviation between the calibration curve of the sensor and the fitting straight line and the full-scale output as the linearity of the sensor, and the percentage is expressed as follows:
wherein, Delta YmaxThe maximum deviation between the calibration curve of the sensor and the fitted straight line is shown, and Y is the full-scale output. The smaller the value, the better the linearity.
A2, fitting a change curve of the output voltage and the bias magnetic field of the bulk acoustic wave excited micro magnetic sensor model based on the micro heterojunction with different layers under the condition of applying the direct current bias magnetic field, and determining the bias magnetic field range according to the set linearity condition.
In an alternative embodiment of the present invention, under a bias magnetic field of 0-500Oe, the linearity of 2-5 layer ME heterostructure is more than 13%, which can not meet the requirement of sensor performance. As shown in FIG. 6(b), narrowing the measurement range of the magnetic field to 75-150Oe can control the linearity of the 3-5 layer structure to within 2%, 1.68%, 1.39% and 1.86%, respectively. However, the linearity of the two-layer structure under the same conditions was less than 6.65%. In order to make the linearity less than 2%, the measurement range must be further limited to 75-100 Oe.
Example 3
The method for improving the performance of the bulk acoustic wave driven micro-heterojunction magnetic sensor described in embodiment 2 further includes:
b1, fitting a change curve of the output voltage of the bulk acoustic wave excited micro-magnetic sensor model based on the micro heterojunction with different layers and the resonant frequency of the sensor under the condition of applying an alternating excitation magnetic field, and determining the influence of the magnetic field condition on the resonant frequency of the device and the resonant frequency of the sensor when the maximum output voltage exists;
in an alternative embodiment of the present invention, in order to perform a preliminary estimation of the resonant frequency of the three-layer magnetic sensor, the admittance curve obtained by applying an alternating voltage to the piezoelectric layer under the condition of no bias magnetic field is shown in fig. 7(a), the first-order resonant frequency occurs around 2.1GHz, and the second-order resonant frequency is around 2.7 GHz.
When the dc bias magnetic field is less than 300Oe, the output voltage at the resonance frequency varies irregularly and insignificantly. Therefore, as shown in FIG. 7(b), the small signal frequency domain analysis method studies the voltage output performance of the DC bias magnetic field of 300-500 Oe. It was found that both the first and second order resonant frequencies moved slightly to the right under the influence of the magnetic field, increasing to about 2.2GHz and 2.9GHz, respectively. In addition, the output voltage at the resonant frequency is significantly higher than other frequencies and increases with increasing bias field. When the bias field is 500Oe, the maximum output voltage at the first-order resonant frequency is 0.18V, which is much larger than the pure DC magnetic field bias mode under the same conditions. Therefore, in the small-signal frequency-domain analysis mode, the sensitivity of the magnetic sensor is higher.
B2, fitting a variation curve of output voltage and a magneto-electric coupling coefficient of a micro-heterojunction bulk acoustic wave excitation micro-magnetic sensor model with different layers at the resonant frequency of the sensor under the condition of applying an alternating excitation magnetic field, and determining an optimal direct-current bias magnetic field and a disturbance condition of applying the alternating excitation magnetic field;
in an alternative embodiment of the present invention, as shown in fig. 8, the ME coefficient is a function of the DC bias field at the first-order resonant frequency 2.2GH of the sensor in the high-frequency alternating magnetic field mode. When the bias field is about 90Oe, the maximum value of the ME coefficient is 3.24V/Oe-cm, which is significantly larger than 2.81V/Oe-cm in the pure DC bias mode. Therefore, by adjusting the optimum bias magnetic field at the resonance frequency, the sensitivity of the magnetic sensor can be further improved.
B3, carrying out sensor optimization design according to the determined bulk acoustic wave excitation micro-magnetic sensor model of the micro heterojunction with the optimal layer number, the determined optimal direct current bias magnetic field and the disturbance condition of the applied alternating excitation magnetic field.
The invention constructs a simulation model of the micro-magnetic sensor based on the ME coupling heterostructure driven by the BAW, and respectively calculates and analyzes the performance parameters of the sensor in the modes of direct current bias and high-frequency alternating magnetic field. By comparing the stress, strain and output voltage performance of 2-5 layers of ME heterostructure, the sensitivity and linearity of the sensor are further analyzed, and the following conclusion can be obtained: in the dc mode, the three-layer magnetic sensor has the highest sensitivity. When the bias magnetic field is 125Oe, the sensitivity can reach 2.81V/Oe cm. Meanwhile, if the range of the bias magnetic field is reduced to 75-150Oe, the linearity of the sensor can be controlled within 2 percent; in the high-frequency alternating magnetic field mode, the output voltage at the resonance frequency is high, and the maximum value of the ME coefficient at the first-order resonance frequency is 3.24V/Oe cm. Therefore, by adjusting the number of layers of the sensor and optimizing the bias magnetic field condition, the output voltage under the resonance frequency can be improved, the magnetoelectric conversion efficiency of the ME heterostructure can be improved, and finally the design of the magnetic sensor with high sensitivity is realized. The research result has important significance for guiding the structural design and performance optimization of the high-frequency magnetic sensor.
The principle and the implementation mode of the invention are explained by applying specific embodiments in the invention, and the description of the embodiments is only used for helping to understand the method and the core idea of the invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
It will be appreciated by those of ordinary skill in the art that the embodiments described herein are intended to assist the reader in understanding the principles of the invention and are to be construed as being without limitation to such specifically recited embodiments and examples. Those skilled in the art can make various other specific changes and combinations based on the teachings of the present invention without departing from the spirit of the invention, and these changes and combinations are within the scope of the invention.
Claims (6)
1. A method of improving the performance of a bulk acoustic wave driven micro-heterojunction magnetic sensor, comprising the steps of:
s1, constructing a bulk acoustic wave excitation micro-magnetic sensor model based on micro heterojunction with different layer numbers;
s2, adopting a steady state solving method and a small signal frequency domain solving method to respectively measure the output voltage of the bulk acoustic wave excited micro-magnetic sensor model based on the micro heterojunction with different layers under the disturbance condition of applying a direct current bias magnetic field and an alternating excitation magnetic field;
s3, respectively calculating magneto-electric coupling coefficients of the bulk acoustic wave excited micro-magnetic sensor model based on the micro heterojunction with different layers according to the measured output voltage;
s4, fitting a variation curve of output voltage and a magneto-electric coupling coefficient of the bulk acoustic wave excited micro-magnetic sensor model based on the micro-heterojunction with different layers under the condition of applying a direct-current bias magnetic field, and determining the bulk acoustic wave excited micro-magnetic sensor model of the micro-heterojunction with the optimal layer number and the optimal bias magnetic field condition;
and S5, carrying out sensor optimization design according to the determined bulk acoustic wave excitation micro-magnetic sensor model of the micro heterojunction with the optimal number of layers and the optimal bias magnetic field condition.
2. The method for improving the performance of a bulk acoustic wave driven micro-heterojunction magnetic sensor according to claim 1, wherein the step S1 specifically comprises:
the method comprises the steps of constructing a bulk acoustic wave excitation micro-magnetic sensor model based on micro-heterojunctions with different layer numbers by adopting a finite element analysis method, wherein the bulk acoustic wave excitation micro-magnetic sensor model of the micro-heterojunctions comprises a magnetoelectric coupling micro-heterojunction formed by a magnetostrictive layer and a piezoelectric layer and an air domain outside the magnetoelectric coupling micro-heterojunction, the lower surface of the piezoelectric layer is grounded, the average voltage measured on the upper surface of the piezoelectric layer is used as an output voltage, and a bias magnetic field is applied in the air domain along the Y direction.
3. The method for improving the performance of a bulk acoustic wave driven micro-heterojunction magnetic sensor according to claim 1, wherein the calculation formula of the magneto-electric coupling coefficient is as follows:
wherein alpha isMEIs a magneto-electric coupling coefficient, Ez＝V/tpV is the average voltage value of the upper surface of the piezoelectric layer, tpIs the thickness of the piezoelectric layer HyA magnetic field in the Y direction.
4. The method of improving bulk acoustic wave driven micro-heterojunction magnetic sensor performance of claim 1, further comprising:
a1, respectively calculating the linearity of the bulk acoustic wave excited micro-magnetic sensor model based on the micro heterojunction with different layers according to the measured output voltage;
a2, fitting a change curve of the output voltage and the bias magnetic field of the bulk acoustic wave excited micro magnetic sensor model based on the micro heterojunction with different layers under the condition of applying the direct current bias magnetic field, and determining the bias magnetic field range according to the set linearity condition.
5. The method of improving the performance of a bulk acoustic wave driven micro-heterojunction magnetic sensor according to claim 4, wherein the linearity is calculated by the formula:
wherein, Delta YmaxThe maximum deviation between the calibration curve of the sensor and the fitted straight line is shown, and Y is the full-scale output.
6. The method of improving the performance of a bulk acoustic wave driven micro-heterojunction magnetic sensor according to claim 1 or 4, further comprising:
b1, fitting a change curve of the output voltage of the bulk acoustic wave excited micro-magnetic sensor model based on the micro heterojunction with different layers and the resonant frequency of the sensor under the condition of applying an alternating excitation magnetic field, and determining the influence of the magnetic field condition on the resonant frequency of the device and the resonant frequency of the sensor when the maximum output voltage exists;
b2, fitting a variation curve of output voltage and a magneto-electric coupling coefficient of a bulk acoustic wave excitation micro-magnetic sensor model of micro heterojunction with different layers at the resonant frequency of the sensor under the condition of applying an alternating excitation magnetic field, and determining an optimal direct-current bias magnetic field and a disturbance condition of applying the alternating excitation magnetic field;
b3, carrying out sensor optimization design according to the determined bulk acoustic wave excitation micro-magnetic sensor model of the micro heterojunction with the optimal layer number, the determined optimal direct current bias magnetic field and the disturbance condition of the applied alternating excitation magnetic field.
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