CN102435959A - Magnetic-acoustic surface wave magnetic field sensor and preparation method thereof - Google Patents
Magnetic-acoustic surface wave magnetic field sensor and preparation method thereof Download PDFInfo
- Publication number
- CN102435959A CN102435959A CN2011103063846A CN201110306384A CN102435959A CN 102435959 A CN102435959 A CN 102435959A CN 2011103063846 A CN2011103063846 A CN 2011103063846A CN 201110306384 A CN201110306384 A CN 201110306384A CN 102435959 A CN102435959 A CN 102435959A
- Authority
- CN
- China
- Prior art keywords
- thin film
- magnetic field
- piezoelectric membrane
- surface wave
- field sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention relates to a magnetic-acoustic surface wave magnetic field sensor and a preparation method thereof, and belongs to the technical field of electronic functional materials and devices. The sensor comprises a piezoelectric thin film, a magnetostrictive thin film and a substrate, wherein the magnetostrictive thin film is positioned between the piezoelectric thin film and the substrate; the thickness of the magnetostrictive thin film is 2-5 times the thickness of the piezoelectric thin film; and an interdigital transducer is arranged on the surface of the piezoelectric thin film, and the interdigital transducer and the piezoelectric thin film constitute an acoustic surface wave device. A layer of SiO2 is covered on the surface of the piezoelectric thin film and the interdigital transducer. When the sensor is in resonant state, if an external magnetic field changes, the Young's modulus of a magnetostrictive layer changes, the propagation speed of acoustic surface waves in a piezoelectric layer can be further affected and then the changes of the external magnetic field can be known by detecting the changes in resonance center frequency. The SiO2 covering layer can compensate for a frequency temperature coefficient of the piezoelectric thin film and realize the frequency temperature coefficient which is close to zero. The sensor has the characteristics of miniaturization, easiness in integration, high sensitivity, good consistency, stability and reliability.
Description
Technical field
The invention belongs to electronic functional material and device technology field, relate to magnetic field sensor structure and preparation method, especially based on piezoelectric and magnetostriction materials magnetosonic surface wave sensor mutually compound, that be used for weak magnetic measurement.
Background technology
Detection of magnetic field all has important effect in productive life and national defense safety field.It is strong that magnetic field has an antijamming capability; Do not receive the interference of external conditions such as temperature, humidity; Radiationless characteristic, and have very strong penetrability, so can be widely used in many military fields such as early warning investigation, automatic tracing and positioning, earth-magnetic navigation, the removal of mines, magnetic wave communication; In addition, magnetic field sensor can also be used as flowmeter, velocity gauge or the like.
Traditional magnetic field sensor comprises coil, hall device, fluxgate, magnetoresistance device, proton, optical pumping, superconducting quantum interference device (SQUID) (SQUID) etc.The magnetic field sensitivity of coil, hall device, magnetic resistance detector etc. is all lower; The sensitivity of fluxgate can reach 10
-10T, applied range; Proton magnetometer/gradometer sensitivity can reach 0.1nT, but circuit is very complicated, power consumption is big, inconvenient maintenance, and cost is also high; Optical pumping and superconductive magnetometer sensitivity are higher by (10
-15But corresponding maintenance cost, operant level require higher T).
The magnetoelectric transducer that is composited by piezoelectric and magnetostriction materials is the development in recent years magnetic detection technology of getting up, and the magnetic field detection sensitivity of laboratory demonstration can reach 10
-11The T magnitude, and have that cost is low, low in energy consumption, many advantages such as frequency and amplitude range are wide.At present, existing both at home and abroad a plurality of magnetic field sensor patented technologies (like Chinese patent CN200920105220.5) based on this compound substance.But also there is the problem of following two aspects in this magnetic field sensor: 1) the best compound substance of performance is a bonding forming at present, and interface binding power is unstable, and performance is subject to the influence in technology and bad border, and consistance is poor; 2) magnetoelectric effect is relevant with the volume of piezoelectric phase, and along with the rapid reduction of dwindling of piezoelectric phase volume, so be difficult to realize the microminiaturization of device.
If SAW device and magnetostriction materials is integrated, just can design obtain the magnetosonic surface wave device (Magnetic surface acoustic wave, MSAW).People such as Webber has attempted at the emission of traditional SAW lag line and one deck soft magnetic metal film of having accepted between the electrode sputter the earliest; The magnetosonic surface wave device that obtains is as shown in Figure 1; The quartz substrate 1 that comprises the ST tangential, IDTS interdigital transducer input electrode 2, IDTS interdigital transducer output electrode 4 and FeB film 3.Wherein, the thickness of FeB film 3 is 0.8 μ m, is far smaller than the thickness of piezoelectric substrate, and therefore, when changing the external magnetic field orientation, the velocity of propagation of SAW only changes 0.03%, and obviously, magnetic field sensitivity is not high enough.People such as Hanna are then at first (as shown in Figure 2 with the integrated test that is used for magnetic field of magnetostriction substrate and SAW lag line; Above the yttrium iron garnet film 5 SAWR that ZnO film 1, IDTs interdigital transducer input electrode 2 and IDTs interdigital transducer output electrode 4 constitute); But what they used is the yttrium iron garnet film that is grown on the GGG; Its magnetostriction coefficient is merely 1～2ppm; And receive the strong constraint of rigid substrate, so the final magnetic field sensitivity that obtains is merely 70Hz/Oe, magnetic field resolution 10
-6In fact T is lower than people's such as Webber experimental result.In addition, there is the researchist also to design complete magnetoelasticity SAW device based on magnetostrictive effect.This device produces AC magnetic field when logical RF electric current, because magnetostrictive effect produces surface acoustic wave, wavelength equals the spacing of grid electrode, but because of the poor insulativity of magnetostriction materials, discovers that magnetoelasticity SMAW only can be in special frequency work.Domestic present rarely seen Wen Yumei of University Of Chongqing etc. realizes that through the mode of mechanical force pretension the coupling of magnetostriction materials and SAW is (as shown in Figure 3; The SAWR that is made up of piezoelectric membrane 1, IDTs interdigital transducer input electrode 2, IDTs interdigital transducer output electrode 4 links to each other with the mode of giant magnetostrictive material 3 through the mechanical force pretension); But device volume is bigger; Magnetic field sensitivity is 132Hz/Oe, and magnetic field resolution is merely 10
-6T.It is thus clear that development adopts that microelectronic technique prepares that volume is little, the magnetosonic surface wave low-intensity magnetic field sensor of dependable performance, highfield sensitivity has great importance.
Summary of the invention
For overcome in the existing magnetosonic surface wave magnetic field sensor technology magnetic field sensitivity low, be difficult to microminiaturized deficiency; The invention provides a kind of magnetosonic surface wave magnetic field sensor of composite multi-layer membrane structure, have microminiaturization, easy of integration, highly sensitive, consistance number, reliable and stable characteristics.
Technical scheme of the present invention is following:
A kind of magnetosonic surface wave magnetic field sensor, as shown in Figure 4, comprise piezoelectric membrane 1, magnetostrictive thin film 3, substrate base 9; Said magnetostrictive thin film 3 is between piezoelectric membrane 1 and substrate base 9.The thickness of said magnetostrictive thin film 3 is 2～5 times of said piezoelectric membrane 1 thickness; Said piezoelectric membrane 1 surface has interdigital transducer 14, and interdigital transducer 14 constitutes SAW device with piezoelectric membrane 1.Said interdigital transducer 14 comprises input electrode 2, output electrode 4, be positioned at the input end reflecting grating 7 in input electrode 2 outsides and be positioned at the output terminal reflecting grating 8 in output electrode 4 outsides.
Magnetosonic surface wave magnetic field sensor provided by the invention, when on interdigital transducer input electrode 2, applying a high frequency pumping electric signal, according to inverse piezoelectric effect, the surface of piezoelectric membrane vibrates, and motivating a centre frequency is f
0Surface acoustic wave.If externally-applied magnetic field H is along the easy axis of the magnetostrictive thin film Δ H that changes, because huge Young modulus effect, the Young modulus generation marked change of magnetostrictive thin film, and then change the Young modulus of adjacent with it piezoelectric membrane.The velocity of propagation V of surface acoustic wave in piezoelectric membrane is proportional to
, and (E is the Young modulus of piezoelectric membrane; ρ is the density of piezoelectric membrane); Simultaneously, satisfy formula V=λ f between velocity of wave V, wavelength X, the frequency f person.It is thus clear that the change of Young modulus can cause establishing changing at the velocity of wave V of the surface acoustic wave of piezoelectric membrane surface propagation, thereby causes the changes delta f of the centre frequency of surface acoustic wave.
Tradition magnetoelectricity SAW device directly utilizes magnetostrictive effect to change the wavelength X of surface acoustic wave; Because λ is subject to the design and the microfabrication ability of interdigital transducer; Can not be very little; And big magnetostriction also requires to apply bigger magnetic field, so Δ λ/Δ H is big inadequately, is difficult to realize＜10
-7The magnetic field sensitivity of T.Magnetosonic surface wave magnetic field sensor provided by the invention comprises and the magnetostrictive thin film of piezoelectric membrane homalographic that wherein piezoelectric membrane adopts and has height-oriented piezoelectric membrane (as: ZnO, PZT, AlN or LiNbO
3Piezoelectric membrane); Magnetostrictive thin film adopts the magnetostrictive thin film (as: FeSiB, FeSiBC or FeCoSiB amorphous magnetostrictive thin film) with uniaxial anisotropy and huge Young modulus effect, can realize under several Oe changes of magnetic field that the Young modulus of 30-100% changes.Because the thickness of magnetostrictive thin film 3 is 3～5 times of said piezoelectric membrane 1 thickness, make the flex effect of the faint caused magnetostrictive thin film of changes of magnetic field can cause that also the enough Young moduluss of adjacent piezoelectric membrane change like this.Because being proportional to
, acoustic surface wave propagation speed V satisfies formula V=λ f between velocity of wave V, wavelength X, the frequency f three simultaneously, so Δ f/ Δ H can be very high.With the centre frequency be 500MHz, Young modulus to change the 25% required magnetic field that applies be that 10Oe calculates, magnetic field sensitivity Δ f/ Δ H is better than 25MHz/Oe in theory, magnetic field resolution can reach 10
-11T.
The key difficulties of magnetosonic surface device device preparation is because the metallicity magnetostrictive thin film is easy to oxidation, so be difficult to prepare in its surface ZnO piezoelectric film and follow-up slotting finger transducer.In the magnetosonic surface wave magnetic field sensor provided by the invention, at first at Pt/Ti/SiO
2Prepare ZnO on the/Si substrate; Preparation magnetostrictive thin film under ar gas environment has avoided the oxidation of magnetostrictive thin film and performance to reduce then, then adopts sacrifice layer process; Piezoelectric layer and magnetostrictive layer are transferred on the carrying substrates, and erode Si successively, SiO
2, Ti and Pt, so just can expose the ZnO piezoelectric layer, and accomplish the preparation of inserting finger transducer.
In the magnetosonic surface wave magnetic field sensor provided by the invention, because piezoelectric membrane has negative frequency-temperature coefficient usually, can be at piezoelectric membrane 1 and interdigital transducer surface coverage one deck SiO
2, because SiO
2Have positive frequency-temperature coefficient, both combinations can realize temperature compensation.Frequency-temperature compensation TCF=1/f* (df/dT), TCF receives SiO
2With the thickness ratio of ZnO and the influence of both total thickness.When both gross thickness one timings, ZnO film is thick more, and TCF is big more; Certain when both thickness ratios, total thickness is big more, and TCF is more little.Select suitable thickness ratio and gross thickness, can in the certain frequency scope, realize zero temp shift.So just can make magnetosonic surface wave low-intensity magnetic field sensor provided by the invention not receive Influence of Temperature, have temperature stability preferably.
In sum; Magnetosonic surface wave magnetic field sensor provided by the invention; Adopt the rhythmo structure of Athens film and magnetostrictive thin film; Wherein piezoelectric membrane adopts height-oriented piezoelectric membrane, and magnetostrictive thin film adopts the magnetostrictive thin film of uniaxial anisotropy and huge Young modulus effect, and the SiO of positive frequency temperature coefficient is adopted on the piezoelectric membrane surface
2Carry out temperature compensation, make the present invention have microminiaturization, easy of integration, highly sensitive, consistance number, reliable and stable characteristics.
Description of drawings
Fig. 1 is the magnetosonic surface wave device structural representation that people such as Webber proposes.
Fig. 2 is the magnetosonic surface wave device structural representation that people such as Hanna proposes.
Fig. 3 is the magnetosonic surface wave device structural representation that people such as the Wen Yumei of University Of Chongqing proposes.
Fig. 4 is a magnetosonic surface wave device perspective view provided by the invention.
Fig. 5 is a magnetosonic surface wave device cross-sectional view provided by the invention.
Embodiment
Aforementioned magnetosonic surface wave device provided by the invention; Because device is a complex thin film structure; Between magnetostriction layer film and substrate base, need to adopt binding material to bond together, said bonding layer material should have protective effect (specifically can adopt epoxy resin) to the magnetostriction layer film simultaneously; Simultaneously, between piezoelectric membrane 1 and magnetostrictive thin film 3, adopt the transition of crome metal cushion.
Magnetosonic surface wave device provided by the invention, its preparation method can be summarized as follows:
A kind of preparation method of magnetosonic surface wave magnetic field sensor may further comprise the steps:
Step 1: at the Pt/Ti/SiO of cleaning
2The Pt surface sputtering of/Si substrate deposits piezoelectric membrane and piezoelectric membrane is carried out The high temperature anneal.Piezoelectric membrane should adopt height-oriented ZnO, PZT, AlN or LiNbO
3Piezoelectric membrane, thickness are 1～2 micron.
Step 2: at step 1 gained piezoelectric membrane surface sputtering plated metal chromium cushion.The THICKNESS CONTROL of crome metal cushion is about 20 nanometers.The effect of crome metal cushion is the adhesion that increases between piezoelectric membrane and the magnetostrictive thin film; If directly at piezoelectric membrane surface sputtering magnetostrictive thin film; The destruction that can cause the piezoelectric membrane character on the one hand, the magnetostrictive thin film that also is difficult to obtain having uniaxial anisotropy and huge Young modulus effect on the other hand.
Step 3: at step 2 gained crome metal buffer-layer surface sputtering sedimentation magnetostrictive thin film.Magnetostrictive thin film should adopt FeSiB, FeSiBC or the FeCoSiB magnetostrictive thin film with uniaxial anisotropy and huge Young modulus effect, and thickness is 4～5 microns.During concrete sputter, but outside magnetic field is induced down sputter, periodically inserts 2～3 layers of metal copper layer simultaneously, with the single shaft intra-face anisotropy of raising magnetostrictive thin film.
Step 4: step 3 gained magnetostrictive thin film is bonded in the substrate base surface.Binding material can adopt epoxy resin, and epoxy resin can shield to magnetostrictive thin film simultaneously.
Step 5: behind the completing steps 1～4, erode Pt/Ti/SiO
2/ Si substrate exposes piezoelectric membrane.Corrosion Pt/Ti/SiO
2During/Si substrate, adopt strong base solution corrosion SiO
2/ Si layer adopts HF solution corrosion Pt/Ti layer.
Step 6: make the interdigital transducer structure at the piezoelectric membrane laminar surface.Said interdigital transducer structure comprises input electrode, output electrode, be positioned at the input end reflecting grating in the input electrode outside and be positioned at the output terminal reflecting grating in the output electrode outside; Concrete manufacture craft adopts photoetching and thin film deposition processes, and the interdigital transducer manufacturing materials adopts metallic aluminium.
Step 7: at piezoelectric membrane and interdigital transducer surface sputtering deposition SiO
2
Embodiment one
Through a kind of concrete surface wave magnetic field sensor of above-mentioned preparation technology's gained, substrate base is a quartz substrate, is of a size of 20 * 10 millimeters, and each ingredient parameter is following:
Piezoelectric membrane is the ZnO film of C axle orientation, and thickness is 1 micron, and the rocking curve FWHM of its (002) diffraction peak (half-breadth is high) is 2.8deg, resistivity＞10
9Ω/cm, surfaceness is less than 4nm, piezoelectric coefficient d
33For
Magnetostrictive thin film is the Fe of 5 micron thick
81Si
13.5B
3.5C
2Film, magnetostriction coefficient are 35ppm, are 2Oe along the coercive force of direction of easy axis, remanence ratic＞75%;
Interdigital transducer is the both-end interdigital transducer that reflecting grating is contained in both sides, and thickness is 0.8 micron, adopts metallic aluminium to make; The finger beam of IDs and reflecting grating is 2 μ m with the finger spacing; Input, output IDTs logarithm are 100 pairs, and the aperture is 320 μ m, and the reflecting grating of both sides is 500; Import, export the 80 μ m that are spaced apart between the IDTs, the distance between IDTs and the reflecting grating is 10 μ m;
SiO
2The frequency-temperature compensation layer thickness is 2.5 microns;
The crome metal buffer layer thickness is 20 nanometers, and bonding layer material is an epoxy resin.
Embodiment two
Through a kind of concrete surface wave magnetic field sensor of above-mentioned preparation technology's gained, substrate base is a quartz substrate, and sizes of substrate is 20 * 10 millimeters, and each ingredient parameter is following:
Piezoelectric membrane is PZT (Pb
1.1(Zr
0.58Ti
0.42) O
3) film, thickness is 1 micron, the rocking curve FWHM of its (001) diffraction peak (half-breadth is high) is 5.8deg, resistivity＞10
10Ω/cm, surfaceness is less than 6.5nm, piezoelectric coefficient d
33For
Magnetostrictive thin film is the Fe after 5 microns
78Si
9B
13Film, magnetostriction coefficient are 30ppm, are 2.4Oe along the coercive force of direction of easy axis, remanence ratic＞50%; Inserted the metal copper layer after two-layer 20 nanometers in the magnetostrictive thin film;
Interdigital transducer is the both-end interdigital transducer that reflecting grating is contained in both sides, and thickness is 0.8 micron, adopts metallic aluminium to make;
SiO
2The frequency-temperature compensation layer thickness is 2.5 microns (ZnO and SiO
2The thickness ratio be 2: 5, both total thickness are 3.5 μ m, and 0.8ppm/ ℃ TCF is arranged about 350MHz);
The crome metal buffer layer thickness is 20 nanometers, and bonding layer material is an epoxy resin.
Obviously; Those skilled in the art should know that magnetosonic surface wave weak magnetic sensor provided by the invention can also adopt the material that has with ZnO film and FeSiBC film same nature; Like PZT piezoelectric membrane and FeSiB magnetostrictive thin film etc., simultaneously, the both-end SAWR that the present invention relates to also can be made into single-ended SAWR; These changes all do not break away from the spirit and scope of the present invention, all are included among the intent of the present invention.
Claims (10)
1. a magnetosonic surface wave magnetic field sensor comprises piezoelectric membrane (1), magnetostrictive thin film (3), substrate base (9); Said magnetostrictive thin film (3) is positioned between piezoelectric membrane (1) and the substrate base (9); It is characterized in that the thickness of said magnetostrictive thin film (3) is 2～5 times of said piezoelectric membrane (1) thickness; Said piezoelectric membrane (1) surface has interdigital transducer (14), and interdigital transducer (14) constitutes SAW device with piezoelectric membrane (1); Input end reflecting grating (7) that said interdigital transducer (14) comprises input electrode (2), output electrode (4), be positioned at input electrode (2) outside and the output terminal reflecting grating (8) that is positioned at outside the output electrode (4).
2. magnetosonic surface wave magnetic field sensor according to claim 1 is characterized in that said piezoelectric membrane (1) and interdigital transducer surface coverage have one deck SiO
2(10).
3. magnetosonic surface wave magnetic field sensor according to claim 1 and 2 is characterized in that, said piezoelectric membrane (1) is height-oriented ZnO, PZT, AlN or LiNbO
3Piezoelectric membrane, thickness are 1～2 micron; FeSiB, FeSiBC or the FeCoSiB magnetostrictive thin film of said magnetostrictive thin film (3) for having uniaxial anisotropy and huge Young modulus effect, thickness is 4～5 microns.
4. magnetosonic surface wave magnetic field sensor according to claim 1 and 2 is characterized in that, has layer of metal chromium cushion (11) between said piezoelectric membrane (1) and the magnetostrictive thin film (3).
5. magnetosonic surface wave magnetic field sensor according to claim 1 and 2 is characterized in that, has one deck bonding protective seam (12) between said magnetostrictive thin film (3) and the substrate base (9).
6. according to each described magnetosonic surface wave magnetic field sensor of claim 1～5, it is characterized in that, periodically insert 2～3 layers of metal copper film in the said magnetostrictive thin film (3), form compound magnetostrictive thin film.
7. the preparation method of a magnetosonic surface wave magnetic field sensor may further comprise the steps:
Step 1: at the Pt/Ti/SiO of cleaning
2The Pt surface sputtering deposition piezoelectric membrane of/Si substrate;
Step 2: at step 1 gained piezoelectric membrane surface sputtering plated metal chromium cushion;
Step 3: at step 2 gained crome metal buffer-layer surface sputtering sedimentation magnetostrictive thin film;
Step 4: step 3 gained magnetostrictive thin film is bonded in the substrate base surface;
Step 5: behind the completing steps 1～4, erode Pt/Ti/SiO
2/ Si substrate exposes piezoelectric membrane;
Step 6: make the interdigital transducer structure at the piezoelectric membrane laminar surface;
Step 7: at piezoelectric membrane and interdigital transducer surface sputtering deposition SiO
2
8. the preparation method of surface wave magnetic field sensor according to claim 7 is characterized in that, said piezoelectric membrane is height-oriented ZnO, PZT, AlN or LiNbO
3Piezoelectric membrane, thickness are 1～2 micron; Said magnetostrictive thin film is FeSiB, FeSiBC or the FeCoSiB magnetostrictive thin film with uniaxial anisotropy and huge Young modulus effect, and thickness is 4～5 microns.
9. the preparation method of surface wave magnetic field sensor according to claim 7 is characterized in that, the binding material that step 4 adopts is an epoxy resin.
10. the preparation method of surface wave magnetic field sensor according to claim 7; It is characterized in that; Said interdigital transducer structure comprises input electrode, output electrode, be positioned at the input end reflecting grating in the input electrode outside and be positioned at the output terminal reflecting grating in the output electrode outside; Concrete manufacture craft adopts photoetching and thin film deposition processes, and the interdigital transducer manufacturing materials adopts metallic aluminium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103063846A CN102435959A (en) | 2011-10-11 | 2011-10-11 | Magnetic-acoustic surface wave magnetic field sensor and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103063846A CN102435959A (en) | 2011-10-11 | 2011-10-11 | Magnetic-acoustic surface wave magnetic field sensor and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102435959A true CN102435959A (en) | 2012-05-02 |
Family
ID=45984106
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011103063846A Pending CN102435959A (en) | 2011-10-11 | 2011-10-11 | Magnetic-acoustic surface wave magnetic field sensor and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102435959A (en) |
Cited By (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104198963A (en) * | 2014-09-15 | 2014-12-10 | 电子科技大学 | Magnetoelectric surface-acoustic-wave magnetic-field sensor and manufacturing method thereof |
| CN104215917A (en) * | 2014-09-12 | 2014-12-17 | 瑞声光电科技(常州)有限公司 | Boundary wave resonance type magnetic sensor |
| CN104897578A (en) * | 2015-06-09 | 2015-09-09 | 天津大学 | Detection method of detecting Young modulus of anisotropic material surface layer based on surface acoustic wave |
| CN106154186A (en) * | 2016-06-20 | 2016-11-23 | 瑞声声学科技(常州)有限公司 | surface acoustic wave magnetic sensor and preparation method thereof |
| CN106199466A (en) * | 2016-06-30 | 2016-12-07 | 重庆大学 | A kind of novel naval vessels monitoring magnetic field sensor |
| CN106353702A (en) * | 2016-09-14 | 2017-01-25 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | MEMS (microelectromechanical system) magnetic field sensor based on contour-mode resonator and preparation method thereof |
| CN106404919A (en) * | 2016-08-25 | 2017-02-15 | 中国科学院微电子研究所 | Surface acoustic wave sensor |
| EP2965107A4 (en) * | 2013-03-07 | 2017-02-22 | Northeastern University | Systems and methods for magnetic field detection |
| CN106569000A (en) * | 2016-10-08 | 2017-04-19 | 中国电力科学研究院 | System and method of carrying out wireless and passive detection on current |
| CN107576922A (en) * | 2017-08-22 | 2018-01-12 | 重庆大学 | A kind of flexible magnetic field measuring device and preparation method thereof |
| CN108470825A (en) * | 2018-03-28 | 2018-08-31 | 电子科技大学 | Magnetoelectricity SAW device based on negative poisson's ratio magnetostriction substrate |
| CN109188407A (en) * | 2018-10-22 | 2019-01-11 | 电子科技大学 | Magnetic sonar sensor and preparation method thereof based on magnetostrictive metals substrate |
| WO2019037485A1 (en) * | 2017-08-23 | 2019-02-28 | 京东方科技集团股份有限公司 | Flexible substrate and preparation method therefor, method for detecting bending, and flexible display device |
| US20190385586A1 (en) * | 2016-12-14 | 2019-12-19 | The Regents Of The University Of California | Magnetic field sensor using acoustically driven ferromagnetic resonance |
| CN110611492A (en) * | 2019-09-09 | 2019-12-24 | 电子科技大学 | Magnetoelectric surface acoustic wave resonator based on magnetostrictive multilayer film |
| WO2020065941A1 (en) * | 2018-09-28 | 2020-04-02 | Tdk株式会社 | Acoustic wave modulation element and physical quantity sensor |
| CN110957990A (en) * | 2019-11-18 | 2020-04-03 | 武汉大学 | Frequency modulation method of ultrahigh frequency resonator |
| CN111044770A (en) * | 2019-12-18 | 2020-04-21 | 中国科学院声学研究所 | Wireless passive surface acoustic wave current sensor based on single-ended resonator |
| WO2020136876A1 (en) * | 2018-12-28 | 2020-07-02 | Tdk株式会社 | Acoustic wave modulation element and physical quantity sensor |
| CN111398872A (en) * | 2020-03-19 | 2020-07-10 | 西安交通大学 | Magnetic sensor based on surface acoustic wave and magnetic torque effect and preparation method |
| CN111413650A (en) * | 2020-03-27 | 2020-07-14 | 北京交通大学 | Composite coating magnetic measurement optical fiber and preparation method thereof |
| CN111537921A (en) * | 2020-04-22 | 2020-08-14 | 西安交通大学 | Cantilever beam type MEMS magnetic sensor and preparation method thereof |
| CN112578321A (en) * | 2020-11-30 | 2021-03-30 | 华东师范大学 | In-situ sound compensation digital magnetic field sensor |
| US20210149001A1 (en) * | 2017-03-13 | 2021-05-20 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Ultra-low power magnetoelectric magnetic field sensor |
| CN113391246A (en) * | 2021-06-11 | 2021-09-14 | 西南科技大学 | Method for improving performance of bulk acoustic wave driven micro-heterojunction magnetic sensor |
| CN113933764A (en) * | 2021-09-30 | 2022-01-14 | 杭州电子科技大学 | Magnetic field sensing system based on ferromagnetic thin film and Fabry-Perot cavity |
| CN114034406A (en) * | 2021-11-08 | 2022-02-11 | 株洲国创轨道科技有限公司 | Magnetostrictive high-energy excited low-frequency surface acoustic wave sensor |
| CN114609554A (en) * | 2022-05-11 | 2022-06-10 | 电子科技大学 | Length-telescopic resonant magnetic sensor |
| CN114899591A (en) * | 2022-05-11 | 2022-08-12 | 电子科技大学 | Multi-period bulk acoustic wave magnetoelectric antenna |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1917351A (en) * | 2006-09-01 | 2007-02-21 | 重庆大学 | Self-powered sensor |
| CN101286545A (en) * | 2008-05-09 | 2008-10-15 | 南京大学 | Compound film hetero-junction having magnetoelectric effect and preparing method thereof |
| US20080265711A1 (en) * | 2007-04-30 | 2008-10-30 | Honeywell International Inc. | Mechanical packaging of surface acoustic wave device for sensing applications |
| CN201344973Y (en) * | 2009-01-16 | 2009-11-11 | 清华大学 | Magnetic field sensor based on magnetoelectric composite material |
| CN101594075A (en) * | 2009-06-30 | 2009-12-02 | 重庆大学 | Magnetostriction and the piezoelectric composite array magnetoelectric transducer on elastic base plate |
| CN101738183A (en) * | 2009-12-29 | 2010-06-16 | 中国人民解放军国防科学技术大学 | Composite film-based frequency-adjustable surface acoustic wave gyro |
-
2011
- 2011-10-11 CN CN2011103063846A patent/CN102435959A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1917351A (en) * | 2006-09-01 | 2007-02-21 | 重庆大学 | Self-powered sensor |
| US20080265711A1 (en) * | 2007-04-30 | 2008-10-30 | Honeywell International Inc. | Mechanical packaging of surface acoustic wave device for sensing applications |
| CN101286545A (en) * | 2008-05-09 | 2008-10-15 | 南京大学 | Compound film hetero-junction having magnetoelectric effect and preparing method thereof |
| CN201344973Y (en) * | 2009-01-16 | 2009-11-11 | 清华大学 | Magnetic field sensor based on magnetoelectric composite material |
| CN101594075A (en) * | 2009-06-30 | 2009-12-02 | 重庆大学 | Magnetostriction and the piezoelectric composite array magnetoelectric transducer on elastic base plate |
| CN101738183A (en) * | 2009-12-29 | 2010-06-16 | 中国人民解放军国防科学技术大学 | Composite film-based frequency-adjustable surface acoustic wave gyro |
Cited By (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2965107A4 (en) * | 2013-03-07 | 2017-02-22 | Northeastern University | Systems and methods for magnetic field detection |
| CN104215917A (en) * | 2014-09-12 | 2014-12-17 | 瑞声光电科技(常州)有限公司 | Boundary wave resonance type magnetic sensor |
| CN104198963B (en) * | 2014-09-15 | 2017-05-03 | 电子科技大学 | Magnetoelectric surface-acoustic-wave magnetic-field sensor and manufacturing method thereof |
| CN104198963A (en) * | 2014-09-15 | 2014-12-10 | 电子科技大学 | Magnetoelectric surface-acoustic-wave magnetic-field sensor and manufacturing method thereof |
| CN104897578A (en) * | 2015-06-09 | 2015-09-09 | 天津大学 | Detection method of detecting Young modulus of anisotropic material surface layer based on surface acoustic wave |
| CN106154186A (en) * | 2016-06-20 | 2016-11-23 | 瑞声声学科技(常州)有限公司 | surface acoustic wave magnetic sensor and preparation method thereof |
| CN106199466A (en) * | 2016-06-30 | 2016-12-07 | 重庆大学 | A kind of novel naval vessels monitoring magnetic field sensor |
| CN106199466B (en) * | 2016-06-30 | 2019-05-21 | 重庆大学 | A kind of naval vessels monitoring magnetic field sensor |
| CN106404919A (en) * | 2016-08-25 | 2017-02-15 | 中国科学院微电子研究所 | Surface acoustic wave sensor |
| CN106353702B (en) * | 2016-09-14 | 2018-11-13 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | A kind of MEMS magnetic field sensors and preparation method based on the modal resonance device that stretches in face |
| CN106353702A (en) * | 2016-09-14 | 2017-01-25 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | MEMS (microelectromechanical system) magnetic field sensor based on contour-mode resonator and preparation method thereof |
| CN106569000A (en) * | 2016-10-08 | 2017-04-19 | 中国电力科学研究院 | System and method of carrying out wireless and passive detection on current |
| US20190385586A1 (en) * | 2016-12-14 | 2019-12-19 | The Regents Of The University Of California | Magnetic field sensor using acoustically driven ferromagnetic resonance |
| US11837211B2 (en) * | 2016-12-14 | 2023-12-05 | The Regents Of The University Of California | Magnetic field sensor using acoustically driven ferromagnetic resonance |
| US20210149001A1 (en) * | 2017-03-13 | 2021-05-20 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Ultra-low power magnetoelectric magnetic field sensor |
| CN107576922A (en) * | 2017-08-22 | 2018-01-12 | 重庆大学 | A kind of flexible magnetic field measuring device and preparation method thereof |
| JP2020532091A (en) * | 2017-08-23 | 2020-11-05 | 京東方科技集團股▲ふん▼有限公司Ｂｏｅ Ｔｅｃｈｎｏｌｏｇｙ Ｇｒｏｕｐ Ｃｏ．，Ｌｔｄ． | Flexible substrate and its manufacturing method, bending detection method and flexible display device |
| WO2019037485A1 (en) * | 2017-08-23 | 2019-02-28 | 京东方科技集团股份有限公司 | Flexible substrate and preparation method therefor, method for detecting bending, and flexible display device |
| JP7238247B2 (en) | 2017-08-23 | 2023-03-14 | 京東方科技集團股▲ふん▼有限公司 | FLEXIBLE SUBSTRATE, MANUFACTURING METHOD THEREOF, BENDING DETECTION METHOD, AND FLEXIBLE DISPLAY DEVICE |
| CN108470825A (en) * | 2018-03-28 | 2018-08-31 | 电子科技大学 | Magnetoelectricity SAW device based on negative poisson's ratio magnetostriction substrate |
| CN108470825B (en) * | 2018-03-28 | 2019-11-05 | 电子科技大学 | Magnetoelectricity SAW device based on negative poisson's ratio magnetostriction substrate |
| WO2020065941A1 (en) * | 2018-09-28 | 2020-04-02 | Tdk株式会社 | Acoustic wave modulation element and physical quantity sensor |
| JPWO2020065941A1 (en) * | 2018-09-28 | 2021-02-15 | Tdk株式会社 | Elastic wave modulation element and physical quantity sensor |
| CN109188407B (en) * | 2018-10-22 | 2022-12-06 | 电子科技大学 | Magnetic sonar sensor based on magnetostrictive metal substrate and preparation method thereof |
| CN109188407A (en) * | 2018-10-22 | 2019-01-11 | 电子科技大学 | Magnetic sonar sensor and preparation method thereof based on magnetostrictive metals substrate |
| WO2020136876A1 (en) * | 2018-12-28 | 2020-07-02 | Tdk株式会社 | Acoustic wave modulation element and physical quantity sensor |
| JPWO2020136876A1 (en) * | 2018-12-28 | 2021-09-09 | Tdk株式会社 | Elastic wave modulation element and physical quantity sensor |
| CN110611492A (en) * | 2019-09-09 | 2019-12-24 | 电子科技大学 | Magnetoelectric surface acoustic wave resonator based on magnetostrictive multilayer film |
| CN110957990A (en) * | 2019-11-18 | 2020-04-03 | 武汉大学 | Frequency modulation method of ultrahigh frequency resonator |
| CN111044770A (en) * | 2019-12-18 | 2020-04-21 | 中国科学院声学研究所 | Wireless passive surface acoustic wave current sensor based on single-ended resonator |
| CN111398872A (en) * | 2020-03-19 | 2020-07-10 | 西安交通大学 | Magnetic sensor based on surface acoustic wave and magnetic torque effect and preparation method |
| CN111413650A (en) * | 2020-03-27 | 2020-07-14 | 北京交通大学 | Composite coating magnetic measurement optical fiber and preparation method thereof |
| CN111413650B (en) * | 2020-03-27 | 2021-06-22 | 北京交通大学 | Composite coating magnetic measurement optical fiber and preparation method thereof |
| CN111537921B (en) * | 2020-04-22 | 2022-02-01 | 西安交通大学 | Cantilever beam type MEMS magnetic sensor and preparation method thereof |
| CN111537921A (en) * | 2020-04-22 | 2020-08-14 | 西安交通大学 | Cantilever beam type MEMS magnetic sensor and preparation method thereof |
| CN112578321B (en) * | 2020-11-30 | 2022-07-19 | 华东师范大学 | In-situ sound compensation digital magnetic field sensor |
| CN112578321A (en) * | 2020-11-30 | 2021-03-30 | 华东师范大学 | In-situ sound compensation digital magnetic field sensor |
| CN113391246A (en) * | 2021-06-11 | 2021-09-14 | 西南科技大学 | Method for improving performance of bulk acoustic wave driven micro-heterojunction magnetic sensor |
| CN113933764A (en) * | 2021-09-30 | 2022-01-14 | 杭州电子科技大学 | Magnetic field sensing system based on ferromagnetic thin film and Fabry-Perot cavity |
| CN113933764B (en) * | 2021-09-30 | 2023-09-08 | 杭州电子科技大学 | Magnetic field sensing system based on ferromagnetic thin film and Fabry-Perot cavity |
| CN114034406A (en) * | 2021-11-08 | 2022-02-11 | 株洲国创轨道科技有限公司 | Magnetostrictive high-energy excited low-frequency surface acoustic wave sensor |
| CN114034406B (en) * | 2021-11-08 | 2024-05-28 | 株洲国创轨道科技有限公司 | Magnetostrictive high-energy excited low-frequency surface acoustic wave sensor |
| CN114609554A (en) * | 2022-05-11 | 2022-06-10 | 电子科技大学 | Length-telescopic resonant magnetic sensor |
| CN114899591A (en) * | 2022-05-11 | 2022-08-12 | 电子科技大学 | Multi-period bulk acoustic wave magnetoelectric antenna |
| CN114899591B (en) * | 2022-05-11 | 2023-05-02 | 电子科技大学 | Multi-period bulk acoustic wave magnetoelectric antenna |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102435959A (en) | Magnetic-acoustic surface wave magnetic field sensor and preparation method thereof | |
| Chu et al. | Review of multi-layered magnetoelectric composite materials and devices applications | |
| CN104198963B (en) | Magnetoelectric surface-acoustic-wave magnetic-field sensor and manufacturing method thereof | |
| Polewczyk et al. | Unipolar and bipolar high-magnetic-field sensors based on surface acoustic wave resonators | |
| CN106154186B (en) | Surface acoustic wave magnetic sensor and preparation method thereof | |
| US6640652B2 (en) | Rotation angle sensor capable of accurately detecting rotation angle | |
| US6437558B2 (en) | Passive solid-state magnetic field sensors and applications therefor | |
| US7298060B2 (en) | Magnetoelectric devices and methods of using same | |
| US9618411B2 (en) | Pressure sensor device | |
| JP6216837B2 (en) | Multiferroic surface acoustic wave antenna | |
| JP2022080885A (en) | Magnetoelectric antenna array | |
| US6650112B2 (en) | Magnetics impedance element having a thin film magnetics core | |
| JP5389950B2 (en) | Spin wave device | |
| JP2008275578A (en) | Magnetic sensor and its manufacturing method | |
| CN117222303A (en) | Sensor device having soft magnetic alloy with reduced coercivity and method of manufacture | |
| CN116031639A (en) | Miniaturized low-frequency bidirectional communication magnetoelectric antenna based on acoustic wave excitation and preparation method thereof | |
| Li et al. | Optimization of autonomous magnetic field sensor consisting of giant magnetoimpedance sensor and surface acoustic wave transducer | |
| Li et al. | Surface acoustic wave based magnetic sensors | |
| CN117741526A (en) | Surface acoustic wave magnetic field sensor based on magnetic berg seeds | |
| JP5228015B2 (en) | Spin wave device | |
| Ellis et al. | Magnetically transduced surface acoustic wave devices | |
| JP2001358378A (en) | Magnetic impedance effect element and its manufacturing method | |
| JP5625053B2 (en) | Manufacturing method of flux gate sensor | |
| Dong | Acoustically Actuated Magnetoelectric Antennas for VLF Communication and Magnetic Sensing | |
| CN107817456B (en) | Single-chip integration magnetic induction sensor based on SAW resonator |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120502 |