CN109444770A - A kind of magnetostriction materials and the compound low resistance resonant mode magnetoelectricity sensing unit of quartz tuning-fork - Google Patents
A kind of magnetostriction materials and the compound low resistance resonant mode magnetoelectricity sensing unit of quartz tuning-fork Download PDFInfo
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- CN109444770A CN109444770A CN201811380206.6A CN201811380206A CN109444770A CN 109444770 A CN109444770 A CN 109444770A CN 201811380206 A CN201811380206 A CN 201811380206A CN 109444770 A CN109444770 A CN 109444770A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
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Abstract
The present invention proposes a kind of magnetostriction materials and the compound low resistance resonant mode magnetoelectricity sensing unit of quartz tuning-fork, include magnetostrictive layer and quartzy sound, the quartz tuning-fork is mounted on magnetostrictive layer, two of the quartz tuning-fork are interdigital to be parallel to each other, when deformation occurs under magnetic fields for magnetostrictive layer, the deformation, which is transferred to quartz tuning-fork, makes that resonance occurs to quartz tuning-fork, and two interdigital direction of vibration are opposite；An interdigital end secure bond with magnetostrictive layer in two interdigital engaging portions of the quartz tuning-fork and magnetostrictive layer secure bond or the quartz tuning-fork.The present invention is small in size, easy to make, at low cost, can be used for the high-sensitivity measurement in magnetic field.
Description
Technical field
The invention belongs to magnetoelectricity sensitive technology fields, and in particular to a kind of magnetostriction materials and high q-factor quartz tuning-fork are multiple
Close low resistance resonant mode magnetoelectricity sensing unit.
Background technique
The magnetic field physical quantity basic as one, accurately measures it and is of great significance.Traditional magnetic field sensor
Mainly there are Hall sensor, fluxgate sensor, superconducting quantum interference device (SQUID), giant magnetic impedance sensor, electromagnetic induction sensor, magnetic
Quick diode Magnetic Sensor, magnetic sensitive transistor Magnetic Sensor etc..
Magnetostriction/piezo-electricity composite material has huge magnetoelectric effect, has in fields such as Magnetic Sensor, magneto-electric transducers wide
General application prospect.Magnetoelectric effect is found to be present in single-phase magnetoelectric material Cr earliest2O3In, but its magnetoelectric effect is very micro-
It is weak.Researchers' proposition is compound in a certain way with piezoelectric material by magnetostriction materials, and being obtained using product effect has magnetic
It is compound, folded that particle mixed phase has been developed in magnetostriction/piezo-electricity composite material research process in the composite material of electrical effect
Layer is compound, lateral compound, embedded a variety of complex methods such as compound.Magnetostriction/piezo-electricity composite material passes through magnetic-machine-thermocouple
It closes, when excitation field frequency is close to its resonance frequency, magnetoelectric effect can be been significantly enhanced.Magnetoelectricity under this resonant state
The characteristic that effect is significantly increased has a wide range of applications in magnetoelectric transducer and field of transducer.Theory analysis table
It is bright, effective mechanical quality factor (Q value) of the magnetoelectric voltage coefficient of resonant mode magnetoelectricity composite magnetic field sensor and composite material at
Direct ratio.On this basis, researchers are prepared for various resonant mode magnetic electric compound materials in succession.In fact, magnetostriction and pressure
Under electric material lamination complex method, coupled between magnetostrictive layer and piezoelectric layer by straining realization, due to magnetostriction materials
Itself there is the damping of high magnetomechanical, magnetostriction/Piezoelectric anisotropy structure effective Q value is limited.According to phenomenological theory and technology magnetic
Change process influences since different magnetic field acts on lower domain motion characteristic, is difficult to find a kind of while having high pressure magnetic coefficient, high Q
Value and magnetoelastic internal friction do not have the magnetostriction materials of dependence to magnetic field.Fortunately, there is the piezoelectric material of many high q-factor such as
Quartz crystal, ZnO, AlN etc..
Summary of the invention
In view of this, the present invention proposes that a kind of low-loss, the resonant mode magnetoelectricity sensing unit of high q-factor, and magnetoelectricity are sensitive single
Elementary volume is small, easy to make, at low cost, can be used for the high-sensitivity measurement in magnetic field.
In order to solve the above technical problem, the present invention provides a kind of magnetostriction materials and the compound low resistance of quartz tuning-fork are humorous
Vibration formula magnetoelectricity sensing unit, comprising magnetostrictive layer and quartzy sound, the quartz tuning-fork is mounted on magnetostrictive layer, the stone
Two of English tuning fork are interdigital to be parallel to each other, and when deformation occurs under magnetic fields for magnetostrictive layer, the deformation is transferred to stone
English tuning fork makes that resonance occurs to quartz tuning-fork, and two interdigital direction of vibration are opposite.
Preferably, two interdigital engaging portions of the quartz tuning-fork and magnetostrictive layer secure bond.
Preferably, the magnetostrictive layer is strip, the region of the secure bond, which is located at, states magnetostrictive layer side
The middle part in face.
Preferably, the engaging portion formation plane that the quartz tuning-fork two is interdigital, the plane whole and magnetostrictive layer
In conjunction with.
Preferably, an interdigital end secure bond with magnetostrictive layer in the quartz tuning-fork.
Preferably, the magnetostrictive layer is the interdigital shape in strip, end shape and size and quartz tuning-fork
Shape and size are adapted, and an interdigital side in the quartz tuning-fork is all in conjunction with the end of magnetostrictive layer.
Preferably, the quartz tuning-fork is fixed on magnetostrictive layer by epoxy resin AB glue.
Preferably, the magnetostrictive layer is cut by one of Terfenol-D, FeGa alloy or FeCo alloy material
It cuts.
Preferably, the magnetostrictive layer polarizes along longitudinal direction.
Compared with prior art, the present invention its remarkable advantage is:
(1) the magnetostriction materials proposed by the invention magnetoelectricity sensing unit structure compound with quartz tuning-fork is simple, body
Product is small, and quartz tuning-fork is to obtain after commercial crystal oscillator removes package casing, at low cost, suitable for mass production.
(2) in magnetostriction materials proposed by the invention and the compound magnetoelectricity sensing unit of quartz tuning-fork, quartz tuning-fork
Two it is interdigital be parallel to each other, due to two interdigital direction of vibration on the contrary, the ess-strain and torque phase of bottom bond area
It mutually offsets, is actually formed stress/strain decoupling region；The present invention will decouple region fixed to magnetostriction materials, magnetostriction
Damping is isolated, and this compound resonant mode magnetoelectricity sensing unit has high Q value.
Detailed description of the invention
Fig. 1 is a kind of embodiment schematic diagram of magnetoelectricity sensing unit of the present invention.
Fig. 2 is the another embodiment schematic diagram of magnetoelectricity sensing unit of the present invention.
Specific embodiment
It is readily appreciated that, technical solution according to the present invention, in the case where not changing connotation of the invention, this field
Those skilled in the art can imagine numerous embodiments of the invention.Therefore, following specific embodiments and attached drawing are only
To the exemplary illustration of technical solution of the present invention, and it is not to be construed as whole of the invention or is considered as to the technology of the present invention side
The limitation or restriction of case.
Magnetostriction materials proposed by the present invention and the compound low resistance resonant mode magnetoelectricity sensing unit of quartz tuning-fork include magnetic
Stretchable layer, quartz tuning-fork are caused, it is using epoxy resin AB glue that quartz tuning-fork is Nian Jie with magnetostrictive layer compound.The magnetoelectricity is sensitive single
Magnetic-machine-electricity conversion process of member can regard a forced vibration process as.Under action of alternating magnetic field, magnetostriction materials due to
Magnetostrictive effect and occur it is flexible form mechanical force, magnetostriction mechanical force is transmitted to quartz tuning-fork and forces tuning fork vibration,
After the acquisition and processing of back-end circuit, electric signal is formed.When the frequency of alternating magnetic field is consistent with the resonance frequency of quartz tuning-fork,
The Oscillation Amplitude of quartz tuning-fork is maximum.Since the piezomagnetic coefficient of magnetostriction materials changes with the variation of bias magnetic field,
Correspondingly, under different bias magnetic field effects, the magnetostrictive force on quartz tuning-fork is transmitted to regard to different, the output of tuning fork is electric
Stream can also generate variation.The magnetostriction materials use the material with magnetostrictive effect to cut, and such as super mangneto is stretched
Compression material Terfenol-D, FeGa alloy, FeCo alloy etc., polarization direction polarizes along longitudinal direction.The present invention uses quartz tuning-fork, tool
There is the low-loss advantage of high q-factor, can be used for the highly sensitive detection in magnetic field.
Embodiment 1
In conjunction with Fig. 1, the magnetostriction materials and the compound magnetoelectricity sensing unit of quartz tuning-fork are by magnetostrictive layer 1 and stone
English tuning fork 2 forms.When preparing magnetoelectricity sensing unit, the stress/strain of quartz tuning-fork is decoupled by region using epoxy resin AB glue
It is bonded in the center of magnetostrictive layer, stands 24 hours, reaches working strength to the solid cooling of epoxide resin AB gelling.
The magnetostrictive layer 1 is cut using the material with magnetostrictive effect, such as giant magnetostrictive material
Terfenol-D, FeGa alloy, FeCo alloy etc..
The quartz tuning-fork 2 is made using the quartz plate of X cut type, and two of quartz tuning-fork are interdigital to be parallel to each other, by
In two interdigital direction of vibration on the contrary, the ess-strain and torque of bottom bond area are cancelled out each other, to form stress/answer
Become decoupling region, cancels out each other, be lost minimum in decoupling regional stress/strain.The present embodiment will decouple region and be fixed to mangneto
Stretchable layer, it is minimum on the influence of the Q value of magnetoelectricity sensing unit, and quartz tuning-fork Q value with higher, it is at low cost, it is suitble to batch raw
It produces.
The magnetoelectricity sensing unit under action of alternating magnetic field, stretched due to magnetostrictive effect by magnetostriction materials
Contracting, magnetostrictive force is transmitted to quartz tuning-fork and forces tuning fork vibration, magnetic-machine-electricity conversion process of the device can regard as one by
Compel vibration processes, when the frequency of alternating magnetic field is consistent with the resonance frequency of quartz tuning-fork, the Oscillation Amplitude of quartz tuning-fork is maximum.
Since the piezomagnetic coefficient of magnetostrictive layer changes with the variation of bias magnetic field, correspondingly, under different bias magnetic field effects,
The magnetostrictive force on quartz tuning-fork is transmitted to regard to different, the output electric current of tuning fork can also generate variation, measure different inclined
The current output value for setting quartz tuning-fork under magnetic fields can achieve the purpose that magnetic field detection by theoretical formula conversion.
Embodiment 2
Fig. 2 is the another embodiment of magnetoelectricity sensing unit of the present invention, and the magnetostrictive layer and quartz tuning-fork are compound
Magnetoelectricity sensing unit be made of magnetostrictive layer 1, quartz tuning-fork 2.Unlike the first embodiment, a fork of quartz tuning-fork
Finger is secured entirely on magnetostriction materials one end (left or right), that is, is fixed on the end of magnetostrictive layer 1.In alternating magnetic field
It acts on lower magnetostrictive layer 1 and generates and stretch, magnetostrictive force, which is transmitted on quartz tuning-fork 2, forces quartz tuning-fork to generate vibration, magnetic
Magnetic-machine-electricity conversion process of electric sensing unit can regard a forced vibration process as.When the frequency and quartz of alternating excitation magnetic field
When the resonance frequency of tuning fork is consistent, the Oscillation Amplitude of quartz tuning-fork reaches maximum.Different bias magnetic fields act on lower magnetostriction material
Expect that the magnetostrictive force generated is different, correspondingly, the power being transmitted on quartz tuning-fork is different and generates different electric current output.
The present invention uses interdigital work compound in the quartz tuning-fork resonator and magnetostriction materials of beam mode, stone
Two of English tuning fork are interdigital to be parallel to each other, due to two interdigital direction of vibration on the contrary, the ess-strain of bottom bond area and
Torque is cancelled out each other, and stress/strain decoupling region is actually formed.Have benefited from the decoupling-structure and complex method of tuning fork resonator,
Magnetostriction damping is isolated, and this compound resonant mode magnetoelectricity sensing unit has high Q value, and magnetoelectricity is imitated under resonant state
It should be enhanced.
Claims (9)
1. a kind of magnetostriction materials and the compound low resistance resonant mode magnetoelectricity sensing unit of quartz tuning-fork, which is characterized in that include
Magnetostrictive layer and quartzy sound, the quartz tuning-fork are mounted on magnetostrictive layer, and two of the quartz tuning-fork are interdigital mutually
In parallel, when deformation occurs under magnetic fields for magnetostrictive layer, the deformation, which is transferred to quartz tuning-fork, to be made to quartz tuning-fork to send out
Raw resonance, and two interdigital direction of vibration are opposite.
2. magnetoelectricity sensing unit as described in claim 1, which is characterized in that two interdigital engaging portions of the quartz tuning-fork with
Magnetostrictive layer secure bond.
3. magnetoelectricity sensing unit as claimed in claim 2, which is characterized in that the magnetostrictive layer is strip, described solid
Surely the region combined is located at the middle part for stating magnetostrictive layer one side.
4. magnetoelectricity sensing unit as claimed in claim 2, which is characterized in that the interdigital engaging portion shape of the quartz tuning-fork two
At plane, the plane is all in conjunction with magnetostrictive layer.
5. magnetoelectricity sensing unit as described in claim 1, which is characterized in that an interdigital and mangneto in the quartz tuning-fork
The end secure bond of stretchable layer.
6. magnetoelectricity sensing unit as claimed in claim 5, which is characterized in that the magnetostrictive layer is strip, end
Interdigital shapes and sizes in shapes and sizes and quartz tuning-fork are adapted, an interdigital side in the quartz tuning-fork
All in conjunction with the end of magnetostrictive layer.
7. the magnetoelectricity sensing unit as described in any one of claim 1 to 6, which is characterized in that the quartz tuning-fork passes through
Epoxy resin AB glue is fixed on magnetostrictive layer.
8. the magnetoelectricity sensing unit as described in any one of claim 1 to 6, which is characterized in that the magnetostrictive layer by
One of Terfenol-D, FeGa alloy or FeCo alloy material are cut.
9. the magnetoelectricity sensing unit as described in any one of claim 1 to 6, which is characterized in that the magnetostrictive layer edge
Longitudinal polarization.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811380206.6A CN109444770A (en) | 2018-11-20 | 2018-11-20 | A kind of magnetostriction materials and the compound low resistance resonant mode magnetoelectricity sensing unit of quartz tuning-fork |
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| CN201811380206.6A CN109444770A (en) | 2018-11-20 | 2018-11-20 | A kind of magnetostriction materials and the compound low resistance resonant mode magnetoelectricity sensing unit of quartz tuning-fork |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110118946A (en) * | 2019-04-19 | 2019-08-13 | 华中科技大学 | A kind of resonant mode Magnetic Sensor |
| CN110118947A (en) * | 2019-04-19 | 2019-08-13 | 华中科技大学 | A kind of magnetic sensing device |
| CN111504442A (en) * | 2020-04-27 | 2020-08-07 | 天津恒立远大仪表股份有限公司 | Tuning fork switch probe structure |
| CN112213671A (en) * | 2020-09-16 | 2021-01-12 | 中国科学院合肥物质科学研究院 | Device and method for measuring magnetostrictive effect |
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| CN101609130A (en) * | 2009-07-14 | 2009-12-23 | 重庆大学 | Adopt the magnetostriction materials and the quartz tuning fork compound magnetic sensor of connecting rod |
| CN101609131A (en) * | 2009-07-14 | 2009-12-23 | 重庆大学 | Magnetostriction materials, high-permeability material and quartz tuning fork compound magnetic sensor |
| CN103698407A (en) * | 2013-12-16 | 2014-04-02 | 杭州浙大精益机电技术工程有限公司 | Magnetostrictive twist guided wave sensor for rail bottom defect detection |
| CN205562088U (en) * | 2016-05-03 | 2016-09-07 | 成都皆为科技有限公司 | Quartzy resonance power of integral type is sensing element and dynamometry module frequently |
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| CN101609130A (en) * | 2009-07-14 | 2009-12-23 | 重庆大学 | Adopt the magnetostriction materials and the quartz tuning fork compound magnetic sensor of connecting rod |
| CN101609131A (en) * | 2009-07-14 | 2009-12-23 | 重庆大学 | Magnetostriction materials, high-permeability material and quartz tuning fork compound magnetic sensor |
| CN103698407A (en) * | 2013-12-16 | 2014-04-02 | 杭州浙大精益机电技术工程有限公司 | Magnetostrictive twist guided wave sensor for rail bottom defect detection |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110118946A (en) * | 2019-04-19 | 2019-08-13 | 华中科技大学 | A kind of resonant mode Magnetic Sensor |
| CN110118947A (en) * | 2019-04-19 | 2019-08-13 | 华中科技大学 | A kind of magnetic sensing device |
| CN111504442A (en) * | 2020-04-27 | 2020-08-07 | 天津恒立远大仪表股份有限公司 | Tuning fork switch probe structure |
| CN112213671A (en) * | 2020-09-16 | 2021-01-12 | 中国科学院合肥物质科学研究院 | Device and method for measuring magnetostrictive effect |
| CN112213671B (en) * | 2020-09-16 | 2023-11-03 | 中国科学院合肥物质科学研究院 | Device and method for measuring magnetostriction effect |
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Inventor after: Bian Leixiang Inventor after: Li Dawei Inventor after: Zhu Zhiwei Inventor after: Jia Yunfei Inventor after: Rong Xiaoli Inventor before: Bian Leixiang Inventor before: Li Dawei Inventor before: Zhu Zhiwei Inventor before: Jia Yunfei Inventor before: Rong Xiaoli Inventor before: Wang Mingyang |
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