CN108091982A - Micro-nano film magnetosonic antenna - Google Patents
Micro-nano film magnetosonic antenna Download PDFInfo
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- CN108091982A CN108091982A CN201711462035.7A CN201711462035A CN108091982A CN 108091982 A CN108091982 A CN 108091982A CN 201711462035 A CN201711462035 A CN 201711462035A CN 108091982 A CN108091982 A CN 108091982A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N35/00—Magnetostrictive devices
- H10N35/80—Constructional details
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Abstract
The invention discloses a kind of micro-nano film magnetosonic antennas, including pedestal, cavity is offered in the middle part of base upper surface, in cavity bottom and side wall and base upper surface is equipped with the insulating layer being connected as a single entity, supporting layer is equipped on base upper surface insulating layer, is suspended in the middle part of supporting layer on cavity；The magnetosonic electric coupling structure being made of magnetostrictive thin film and thin film bulk acoustic wave resonator is equipped on supporting layer, magnetosonic electric coupling structure is located at directly over cavity.The magnetostrictive thin film every is made of multilayer magnetostrictive thin film layer with multi-buffering-layer, and the number of plies of magnetostrictive thin film layer is identical with the number of plies of buffer layer and is arranged at intervals.The present invention keeps antenna to possess than traditional electric antenna better performance while realizing and minimizing.
Description
Technical field
The present invention relates to the prioritization scheme of antenna miniaturization, particularly antenna multiphase heterostructure design, to enhance day
The magneto-electric coupled effect of line improves antenna gain and efficiency.
Background technology
Traditional antenna is essential component in any radio transceiver system, and function is radiation and receives to come from certainly
By the radio magnetic wave in space.In emission system, the effect of antenna is to be converted into high frequency electric to propagate in free space
Electromagnetic wave；And in emission system, the effect of antenna is that the electromagnetic wave from free space that will be received switchs to high-frequency electrical
Stream.It generally uses metal wire structure.Metal antenna is by keeping certain length（More than 1/10 wavelength of resonant frequency）
The coupling between rf signal and radiation field at the resonant frequency fx is realized, so as to effectively emit or receive electromagnetic wave.
The gain of antenna is superimposed by oscillator and is generated, and gain is higher, and antenna length is longer.
In recent years, with the fast development that communication electronic equipment minimizes, most of electronic components have all realized microminiature
Change, and traditional antenna is limited by prior art operation principle（Only reaching corresponding size could outside a large amount of electromagnetic radiation
Ripple）Although the smaller that size can be done can sacrifice bandwidth, gain and efficiency, the technology for being usually used in antenna miniaturization is all difficult
With the progress of making a breakthrough property.Particularly there is big wavelength in P ~ S-band etc.（0.1 meter ~ 10 meters）Frequency under, realize antenna it is small
Type and array have very big challenge, this seriously limits the miniature of the equipments such as wireless communication system and radar
Change process.
The content of the invention
For deficiencies of the prior art, it is an object of the invention to propose a kind of micro-nano film magnetosonic antenna,
Antenna is kept to possess than traditional electric antenna better performance while realizing and minimizing.
To achieve the above object, the technical solution adopted by the present invention is as follows：
Micro-nano film magnetosonic antenna, including pedestal, offers cavity in the middle part of base upper surface, in cavity bottom and side wall with
And base upper surface is equipped with the insulating layer being connected as a single entity, and supporting layer is equipped on base upper surface insulating layer, is hanged in the middle part of supporting layer
It is placed on cavity；The magnetic-sound-electric being made of with thin film bulk acoustic wave resonator magnetostrictive thin film is equipped on supporting layer to couple
Structure, magnetic-sound-electric coupled structure are located at directly over cavity.
The upper and lower surface of thin film bulk acoustic wave resonator in the magnetic-sound-electric coupled structure is respectively equipped with top electrode and bottom
Electrode, magnetostrictive thin film is two, respectively on top electrode and under hearth electrode, magnetostrictive thin film and branch under hearth electrode
Support layer connection.
The upper and lower surface of thin film bulk acoustic wave resonator in the magnetic-sound-electric coupled structure is respectively equipped with top electrode and bottom
Electrode, magnetostrictive thin film is one, on top electrode or under hearth electrode；If located under hearth electrode, then under hearth electrode
Magnetostrictive thin film be connected with supporting layer.
Magnetostrictive thin film in the magnetic-sound-electric coupled structure is two, respectively positioned at thin film bulk acoustic wave resonator
To form top electrode and hearth electrode, the magnetostrictive thin film for forming hearth electrode is connected upper and lower surface with supporting layer.
Magnetostrictive thin film in the magnetic-sound-electric coupled structure is one, positioned at the upper table of thin film bulk acoustic wave resonator
Either lower surface to form top electrode or hearth electrode, if forming hearth electrode, forms the magnetostrictive thin film of hearth electrode in face
It is connected with supporting layer.
The magnetostrictive thin film every is made of multilayer magnetostrictive thin film layer with multi-buffering-layer, magnetostrictive thin film
The number of plies of layer is identical with the number of plies of buffer layer and is arranged at intervals.
Every layer of magnetostrictive thin film layer combined by the magnetostriction materials of two layers or more than two layers multilayer performance complement and
Into to enhance magnetosonic stiffness of coupling.
The magnetostrictive thin film layer is combined or by nickel layer and conjunction for two layers by nickel layer and above and below alloy-layer FeGaB
Layer gold FeCuNbSiB is combined for two layers up and down.
Every layer of magnetostrictive thin film layer is located at intermediate magnetostrictive thin film layer two by intermediate magnetostrictive thin film layer and respectively
The end magnetostrictive thin film layer at end is formed, and intermediate magnetostrictive thin film layer is different with end magnetostrictive thin film layer property, from
And a kind of enhanced heterojunction structure of the magnetostriction of symmetrical structure is obtained to enhance magnetic flux, the magnetostrictive thin film of both end of which
Structure is identical with property.
Micro-nano film magnetosonic antenna manufacture craft, it is characterised in that：Step is as follows,
1）Silicon substrate is cleaned, etches the cavity for needing size on a silicon substrate using reactive ion etching process；
2）With oxidation furnace, surface, cavity bottom and four walls aoxidize one layer of SiO on a silicon substrate2Insulating layer；
3）In the surface of insulating layer sacrificial layer of CVD technology growing polycrystalline silicon, cavity is filled up, is then retaining insulating layer
On the basis of with chemical mechanical polishing method flattened surface, the sacrificial layer in only remaining cavity, sacrificial layer upper surface and cavity external insulation
Layer upper surface is in same level；
4）In step 3）Obtained flattened surface grown silicon nitride supporting layer；
5）Then the hearth electrode of antenna is made（Mo or W）, one layer of AlN piezoelectric layer of growth is sputtered on hearth electrode surface, in piezoelectric layer
Surface prepares top electrode（Mo or W or Ta）, then piezoelectric layer is performed etching and makes the layers of the PAD needed for circuit, sputters mangneto
Self-adhering film layer, using litho machine and mask plate etch or corrode needed for magnetostriction layer pattern, and etch corrosion and sacrifice
Window needed for layer；
6）Sacrificial layer is finally released by window using reactive ion etching technology, cavity is formed, so as to obtain the micro-nano
Film magnetosonic antenna；
If magnetostrictive thin film layer is obtained between hearth electrode and supporting layer, in step 4）Afterwards, using coating machine, litho machine with
Mask plate on supporting layer first make needed for magnetostrictive thin film layer, then carry out step 5 again）；
If magnetostrictive thin film reduces corresponding electrode formation process i.e. directly as the electrode of thin film bulk acoustic wave resonator
It can.
Compared with prior art, the present invention has the advantages that：
Micro-nano film magnetosonic antenna of the present invention is when receiving signal, based on piezoelectric material and the compound " product of magnetostriction materials
Effect " after electromagnetic signal is converted to acoustical signal using magnetosonic-acoustic-electric conversion, realizes that signal receives by sound wave resonance, on the contrary
Realize the transmitting of electromagnetic signal.Since the antenna bulk acoustic resonance frequency is identical with the wave frequency received and dispatched, and in same frequency
Under rate, the velocity of sound about 5 orders of magnitude smaller than electromagnetic wave, therefore antenna size can foreshorten to micron dimension, be at present with performance electricity day
The 1/10 ~ 1/100 of linear dimension, it is difficult the contradictory problems reconciled to solve between traditional antenna size and performance.Micro-nano film magnetic
Acoustic antenna breaches the bottleneck that the prior art is difficult to realize miniaturization, greatly meets Novel electronic devices and equipment is micro- to high-performance
The active demand of type antenna.
Magnetic electric compound material is applied to antenna miniaturization techniques field by the present invention, utilizes magnetoelectric material magnetic-sound-electric coupling
The energy conversion machine of " product effect " is produced receives and dispatches electricity for the energy conversion machine system between traditional antenna AC field and electromagnetic field
Magnetostatic wave signal opens new developing direction to domestic antenna miniaturization techniques.
Description of the drawings
Fig. 1 is magnetoelectricity antenna structure view of the present invention.
Fig. 2 is the heterojunction structure schematic diagram of enhancing magnetosonic stiffness of coupling.
Fig. 3 is one schematic diagram of heterojunction structure for enhancing magneto-electric coupled intensity.
Fig. 4 is two schematic diagram of heterojunction structure for enhancing magneto-electric coupled intensity.
Specific embodiment
In order to realize that purpose is miniaturized in antenna, micro-nano film magnetosonic antenna of the present invention is by magnetostrictive thin film and thin-film body sound
Wave resonator forms, the magneto-electric coupled mechanism generated based on piezoelectric material in composite material and magnetostriction materials " product effect "
Realize that electromagnetic wave signal sends and receivees.When the antenna receives signal, magnetostrictive thin film is magnetized by alternating electromagnetism ripple, generates one
A sonication stress generates a voltage output in the stress transfer to piezoelectric material.On the contrary, in signal transmission process,
Thin film bulk acoustic wave resonator generates a vibration bulk acoustic wave, the sound wave stress transfer to magnetostriction material under alternating voltage effect
Flexible vibration occurs on material, generates the magnetic flux of variation and then external radiated electromagnetic wave, is sent so as to fulfill signal.
Below in conjunction with the drawings and specific embodiments, the present invention will be described in detail.
Referring to Fig. 1, micro-nano film magnetosonic antenna of the present invention is can be seen that from figure, including pedestal 1, in 1 upper surface of pedestal
Middle part offers cavity 2, and in 2 bottom and side wall of cavity and 1 upper surface of pedestal is equipped with the insulating layer 3 being connected as a single entity, pedestal 1
Lower surface also is provided with a layer insulating 3.Supporting layer 4 is equipped on 1 upper surface insulating layer 3 of pedestal, 4 middle part of supporting layer is suspended on
On cavity 2；The magnetic-sound-electric being made of with thin film bulk acoustic wave resonator 6 magnetostrictive thin film 5 is equipped on supporting layer 4 to couple
Structure, magnetic-sound-electric coupled structure are located at directly over cavity.Utilize magnetostrictive thin film and piezoelectricity in magnetic-sound-electric coupled structure
The magnetoelectric effect that film " product effect " generates realizes that signal sends and receivees.
The pedestal 1 is formed for silicon materials.Silicon materials are High Resistivity Si, and cavity 2 therein is formed using etching.Select high resistant
Silicon materials are at low cost as pedestal, are easily integrated.
Magnetostrictive thin film 5 is thin film bulk acoustic wave resonator top electrode 7 and 8 both sides of hearth electrode be either unilateral or mangneto
Self-adhering film directly makees the electrode of thin film bulk acoustic wave resonator.Specifically there are following several situations.
1st, the upper and lower surface of the thin film bulk acoustic wave resonator in the magnetic-sound-electric coupled structure is respectively equipped with 7 and of top electrode
Hearth electrode 8, magnetostrictive thin film 5 are two, and respectively on top electrode 7 and under hearth electrode 8, the magnetostriction under hearth electrode is thin
Film 5 is connected with supporting layer 4.Structure i.e. shown in Fig. 1.
2nd, the upper and lower surface of the thin film bulk acoustic wave resonator in the magnetic-sound-electric coupled structure be respectively equipped with top electrode and
Hearth electrode, magnetostrictive thin film only have one, on top electrode or under hearth electrode；If located under hearth electrode, then bottom is electric
Magnetostrictive thin film under extremely is connected with supporting layer.
3rd, the magnetostrictive thin film in the magnetic-sound-electric coupled structure is two, respectively positioned at thin film bulk acoustic wave resonator
Upper and lower surface to form top electrode and hearth electrode, the magnetostrictive thin film for forming hearth electrode is directly connected with supporting layer.
4th, the magnetostrictive thin film in the magnetic-sound-electric coupled structure only has one, positioned at thin film bulk acoustic wave resonator
Either lower surface to form top electrode or hearth electrode, if forming hearth electrode, forms the magnetostriction of hearth electrode for upper surface
Film is directly connected with supporting layer.
The magnetostrictive thin film every is made of multilayer magnetostrictive thin film layer with multi-buffering-layer, magnetostrictive thin film
The number of plies of layer is identical with the number of plies of buffer layer and interleaved is set.Usual buffer layer is the Al of 5nm thickness2O3Layer, such as [FeGaB
(45nm)/Al2O3(5nm)] × 10 layers, i.e. FeGaB and Al2O3All it is ten layers.The film for adding in buffer layer has better c-axis
Preferred orientation, the surfacing of film, crystalline quality make moderate progress, and to enhance magnetostrictive thin film high-frequency soft magnetic characteristic, reduce
Eddy-current loss.During processing, lowest level buffer layer is first sputtered, magnetostrictive thin film layer is grown on its surface, then sputters buffering again
Layer, then by magnetostrictive thin film layer and buffer layer alternating sputtering, until completing one layer of magnetostrictive thin film layer topmost.
Every layer of magnetostrictive thin film layer combined by the magnetostriction materials of two layers or more than two layers multilayer performance complement and
Into to enhance magnetosonic stiffness of coupling.
In addition, in order to enhance magnetosonic stiffness of coupling, every layer of magnetostrictive thin film layer is by two layers or more than two layers multilayer
Magnetostriction materials that can be complementary are composed, and enhanced heterojunction structure is coupled so as to obtain a kind of magnetosonic.Specifically, by tradition
Negative magnetostriction, low magnetic permeability, low saturation magnetic field strength materials nickel（Ni）With direct magnetostriction material, high magnetic permeability, high saturation
Magnetic field intensity material pressure magnetic alloy FeGaB（Or FeCuNbSiB）New magnetostrictive thin film material FeGaB/Ni is combined into up and down（Or
FeCuNbSiB/Ni）, structure is shown in Fig. 2, and wherein nickel layer is upper or lower.The dynamic piezomagnetic coefficient of Ni becomes with bias magnetic field
Change curve and an extreme point is presented, i.e., there are one optimal bias magnetic fields.But, FeGaB/Ni different from Ni（Or FeCuNbSiB/Ni）
Compound magnetic MATERIALS ' DYNAMIC piezomagnetic coefficient can obtain big dynamic piezomagnetic coefficient under zero offset magnetic field：During longitudinal resonance, FeGaB/
Ni（Or FeCuNbSiB/Ni）Piezomagnetic coefficient under zero offset magnetic field is Ni ~ 12.22 times.New magnetostrictive layer and piezoelectricity are thin
Film layer uses the heterojunction structure of optimization, possesses the magnetic flux of bigger.
Further, in order to enhance magneto-electric coupled intensity, the present invention by a kind of magnetostrictive thin film both ends respectively with it is another
Kind heterogeneity magnetostriction both ends combine, so as to obtain a kind of enhanced heterojunction structure of the magnetostriction of symmetrical structure, specifically
Structure can be the both ends docking mode or overlapping mode up and down shown in Fig. 4 described in Fig. 3.The magnetostriction of both end of which is thin
Membrane structure is identical with property.
The present invention uses the miniaturized antenna of brand-new signal transmitting and receiving mechanism, by magnetostrictive thin film material and film bulk acoustic
Resonator forms, and is based on the strong magneto-electric coupled effect under magnetoelectric composite structure resonance state between electromagnetic wave and bulk acoustic wave, in sound wave
The transmitting and reception of electromagnetic wave are realized under frequency.Bulk acoustic wave in magnetoelectricity antenna can excite soft magnetic film that mangneto vibration occurs, into
And give off electromagnetic wave；Conversely, the antenna can directly perceive electromagnetic wave magnetic field, and export a piezoelectric voltage.Therefore, the day
Line is operated under its sound wave resonance frequency rather than EMR electromagnetic resonance frequency.Since under same frequency, the velocity of sound is smaller than electromagnetic wave
About 5 orders of magnitude, the antenna size based on magnetic-sound-electric coupling principle work can foreshorten to micron dimension, be same performance electricity antenna
The 1/10 ~ 1/100 of size.
Micro-nano film magnetosonic antenna manufacture craft of the present invention is（By taking unilateral magnetostrictive thin film as an example）：
1）Silicon substrate is cleaned, etches the cavity for needing size on a silicon substrate using reactive ion etching process；
2）With oxidation furnace, surface, cavity bottom and four walls aoxidize one layer of SiO on a silicon substrate2Insulating layer；
3）In the surface of insulating layer sacrificial layer of CVD technology growing polycrystalline silicon, cavity is filled up, is then retaining insulating layer
On the basis of with chemical mechanical polishing method flattened surface, the sacrificial layer in only remaining cavity, sacrificial layer upper surface and cavity external insulation
Layer upper surface is in same level；
4）In step 3）Obtained flattened surface grown silicon nitride supporting layer；
5）Then the hearth electrode of antenna is made（Mo or W）, one layer of AlN piezoelectric layer of growth is sputtered on hearth electrode surface, in piezoelectric layer
Surface prepares top electrode（Mo or W or Ta）, then piezoelectric layer is performed etching and makes the layers of the PAD needed for circuit, sputters mangneto
Self-adhering film layer, using litho machine and mask plate etch or corrode needed for magnetostriction layer pattern, and etch corrosion and sacrifice
Window needed for layer；
6）Sacrificial layer is finally released by window using reactive ion etching technology, cavity is formed, so as to obtain the micro-nano
Film magnetosonic antenna；
If magnetostrictive thin film layer is obtained between hearth electrode and supporting layer, in step 4）Afterwards, using coating machine, litho machine with
Mask plate on supporting layer first make needed for magnetostrictive thin film layer, then carry out step 5 again）；
If magnetostrictive thin film reduces corresponding electrode formation process i.e. directly as the electrode of thin film bulk acoustic wave resonator
It can.
The above embodiment of the present invention is only example to illustrate the invention, and is not the implementation to the present invention
The restriction of mode.For those of ordinary skill in the art, other can also be made not on the basis of the above description
With the variation and variation of form.Here all embodiments can not be exhaustive.It is every to belong to technical scheme
Changes and variations that derived from are still in the row of protection scope of the present invention.
Claims (10)
1. micro-nano film magnetosonic antenna, it is characterised in that：Including pedestal, cavity is offered in the middle part of base upper surface, in cavity
In bottom and side wall and base upper surface is equipped with the insulating layer being connected as a single entity, and support is equipped on base upper surface insulating layer
Layer, supporting layer middle part are suspended on cavity；It is equipped on supporting layer by magnetostrictive thin film and thin film bulk acoustic wave resonator structure
Into magnetic-sound-electric coupled structure, magnetic-sound-electric coupled structure is located at directly over cavity.
2. micro-nano film magnetosonic antenna according to claim 1, it is characterised in that：In the magnetic-sound-electric coupled structure
The upper and lower surface of thin film bulk acoustic wave resonator is respectively equipped with top electrode and hearth electrode, and magnetostrictive thin film is two, is located at respectively
On top electrode and under hearth electrode, the magnetostrictive thin film under hearth electrode is connected with supporting layer.
3. micro-nano film magnetosonic antenna according to claim 1, it is characterised in that：In the magnetic-sound-electric coupled structure
The upper and lower surface of thin film bulk acoustic wave resonator is respectively equipped with top electrode and hearth electrode, and magnetostrictive thin film is one, positioned at top electricity
Under extremely upper or hearth electrode；If located under hearth electrode, then the magnetostrictive thin film under hearth electrode is connected with supporting layer.
4. micro-nano film magnetosonic antenna according to claim 1, it is characterised in that：In the magnetic-sound-electric coupled structure
Magnetostrictive thin film is two, respectively positioned at the upper and lower surface of thin film bulk acoustic wave resonator to form top electrode and hearth electrode, structure
Magnetostrictive thin film into hearth electrode is connected with supporting layer.
5. micro-nano film magnetosonic antenna according to claim 1, it is characterised in that：In the magnetic-sound-electric coupled structure
Magnetostrictive thin film is one, and positioned at the upper surface of thin film bulk acoustic wave resonator, either lower surface is electric to form top electrode or bottom
Pole, if forming hearth electrode, the magnetostrictive thin film for forming hearth electrode is connected with supporting layer.
6. according to any micro-nano film magnetosonic antennas of claim 1-5, it is characterised in that：The magnetostrictive thin film is every
It opens and is made of multilayer magnetostrictive thin film layer with multi-buffering-layer, the number of plies of magnetostrictive thin film layer is identical with the number of plies of buffer layer
And it is arranged at intervals.
7. micro-nano film magnetosonic antenna according to claim 6, it is characterised in that：Every layer of magnetostrictive thin film layer is by two layers
Or the magnetostriction materials of more than two layers multilayer performance complement are composed, to enhance magnetosonic stiffness of coupling.
8. micro-nano film magnetosonic antenna according to claim 7, it is characterised in that：The magnetostrictive thin film layer is by nickel layer
It is combined for two layers with above and below alloy-layer FeGaB or is combined for two layers by nickel layer and above and below alloy-layer FeCuNbSiB.
9. micro-nano film magnetosonic antenna according to claim 6, it is characterised in that：Every layer of magnetostrictive thin film layer is by centre
Magnetostrictive thin film layer and the end magnetostrictive thin film layer composition for being located at intermediate magnetostrictive thin film layer both ends respectively, intermediate magnetic
Cause self-adhering film layer different with end magnetostrictive thin film layer property, it is enhanced so as to obtain a kind of magnetostriction of symmetrical structure
For heterojunction structure to enhance magnetic flux, the magnetostrictive thin film structure of both end of which is identical with property.
10. micro-nano film magnetosonic antenna manufacture craft described in claim 1, it is characterised in that：Step is as follows,
1）Silicon substrate is cleaned, etches the cavity for needing size on a silicon substrate using reactive ion etching process；
2）A layer insulating is aoxidized used in silicon substrate upper surface, cavity bottom and four walls；
3）Sacrificial layer is grown in surface of insulating layer, cavity is filled up, then uses chemical machinery on the basis of insulating layer is retained
Polishing processes flattened surface, the sacrificial layer being only left in cavity, sacrificial layer upper surface are in same with cavity external insulation layer upper surface
Horizontal plane；
4）In step 3）Obtained flattened surface growth supporting layer；
5）Then the hearth electrode of antenna is made, growth piezoelectric layer is sputtered on hearth electrode surface, top electrode is prepared in piezoelectric layer surface,
Then piezoelectric layer is performed etching and makes the layers of the PAD needed for circuit, magnetostrictive thin film layer is sputtered, using litho machine and mask
Carving, which is lost or corroded, required magnetostriction layer pattern, and etches window needed for corrosion sacrificial layer；
6）Sacrificial layer is finally released by window using reactive ion etching technology, cavity is formed, so as to obtain the micro-nano
Film magnetosonic antenna；
If magnetostrictive thin film layer is obtained between hearth electrode and supporting layer, in step 4）Afterwards, using coating machine, litho machine with
Mask plate on supporting layer first make needed for magnetostrictive thin film layer, then carry out step 5 again）；
If magnetostrictive thin film reduces corresponding electrode formation process i.e. directly as the electrode of thin film bulk acoustic wave resonator
It can.
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| CN108879071A (en) * | 2018-07-03 | 2018-11-23 | 西安电子科技大学 | Magnetoelectricity antenna and preparation method thereof based on magnetostriction piezoelectric material |
| CN109103582A (en) * | 2018-08-29 | 2018-12-28 | 河海大学常州校区 | The nano-machine acoustic antennas and manufacturing method of film bulk acoustic resonator structure |
| CN109786923A (en) * | 2018-12-21 | 2019-05-21 | 西安交通大学 | A kind of miniature magnetoelectricity antenna structure and preparation method thereof of acoustics driving |
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| CN115000683A (en) * | 2022-05-20 | 2022-09-02 | 安徽安努奇科技有限公司 | Hybrid antenna |
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| WO2023188818A1 (en) * | 2022-03-29 | 2023-10-05 | ソニーグループ株式会社 | Vibration element, vibration element array, and electronic equipment |
| CN118017223A (en) * | 2024-04-03 | 2024-05-10 | 西北工业大学 | Micro-clamping type double-frequency magneto-electric antenna and preparation method and application thereof |
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