CN109786923A - A kind of miniature magnetoelectricity antenna structure and preparation method thereof of acoustics driving - Google Patents
A kind of miniature magnetoelectricity antenna structure and preparation method thereof of acoustics driving Download PDFInfo
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Abstract
A kind of miniature magnetoelectricity antenna structure and preparation method of acoustics driving, including matrix, Prague acoustic reflecting layer, bottom electrode, top electrodes, piezoelectric layer and magnetostrictive layer；Acoustic reflecting layer setting in Prague is arranged piezoelectric layer, bottom electrode is arranged between the lower part and Prague acoustic reflecting layer of piezoelectric layer one end in body upper surface, the upper surface of Prague acoustic reflecting layer；The upper surface of piezoelectric layer is provided with top electrodes and magnetostrictive layer.The structure that acoustics driving microminiature magnetoelectricity antenna of the invention is emptied with Prague acoustic reflecting layer instead of air gap structure and back, it is this to improve the mechanical strength for not only increasing magnetoelectricity antenna, and also the presence of multilayer reflective layers has the heat dissipation conducive to device.
Description
Technical field
The invention belongs to microelectronics and information technology field, in particular to a kind of miniature magnetoelectricity antenna structure of acoustics driving
And preparation method thereof.
Background technique
With the development of mobile communication, effect of the antenna in smart phone, tablet computer etc. is more and more crucial, especially
The space that present smart phone leaves antenna in the design is fewer and fewer, needs the size of reduction antenna.But traditional day
For line when receiving and emitting electromagnetic wave, antenna size is greater than 1/10th wavelength of resonant frequency, could be effectively by radio frequency
Electric signal and radiation field coupling.Therefore, traditional antenna is badly in need of finding new theoretical breakthrough on the road being further miniaturized.
Currently, having a kind of new method in terms of reducing antenna size is to increase by one layer on thin film bulk acoustic wave resonator
Magnetostrictive layer, such an approach achieves the couplings of sound wave and electromagnetic wave.Under same frequency, the ripple ratio electromagnetism of sound wave is utilized
Wave velocity of wave is small, so that the antenna size obtained is than traditional 1-2 order of magnitude of antenna size reduction.However, the day of this structure
For line in order to which sound wave maximization to be limited in piezoelectric pile, the scheme of use is to cut through the back of matrix or carve in matrix surface
A air gap out is lost, keeps piezoelectric pile hanging, realizes the total reflection of sound wave.This hanging structure one side anti-shock strength is small,
Influence the stability of performance in device use process；Another aspect hanging structure needs complicated body processing or surface to process work
Skill, manufacturing cost is high, and the yield of product is low.
Summary of the invention
It is above-mentioned to solve the purpose of the present invention is to provide a kind of magnetoelectricity antenna structure and preparation method thereof of acoustics driving
Problem.
To realize the above problem, the invention adopts the following technical scheme:
A kind of miniature magnetoelectricity antenna structure of acoustics driving, including matrix, Prague acoustic reflecting layer, bottom electrode, top
Electrode, piezoelectric layer and magnetostrictive layer；Prague acoustic reflecting layer is arranged in body upper surface, the upper surface of Prague acoustic reflecting layer
Piezoelectric layer is set, bottom electrode is set between the lower part and Prague acoustic reflecting layer of piezoelectric layer one end；The upper surface of piezoelectric layer is set
It is equipped with top electrodes and magnetostrictive layer.
Further, Prague acoustic reflecting layer includes acoustic impedance film and low acoustic impedance film；One acoustic impedance is thin
Film and a low acoustic impedance film form one high low acoustic impedance film, and the low acoustic impedance film of each high low acoustic impedance film is set
It sets in acoustic impedance film upper surface；Prague acoustic reflecting layer is that several high low acoustic impedance film stacks add to be formed.
Further, Prague acoustic reflecting layer is made of acoustic impedance film and low acoustic impedance film, wherein acoustic impedance
Film is one of W, Mo, AlN, Pt, Au, W or SiN, and low acoustic impedance film is one in SiO2, Ti, ZnO, SiOC or Al
Kind.
Further, magnetostrictive layer is arranged at intervals on the upper surface of piezoelectric layer, the mangneto of piezoelectric layer upper surface one end
Top electrodes are set between stretchable layer and piezoelectric layer.
Further, magnetostrictive layer includes magnetostrictive thin film and buffer layer；Magnetostrictive layer is by one or one
More than the period magnetostrictive thin film and buffer layer are alternatively formed, for reducing the vortex current of magnetic material in high frequency；Base
Body is silicon substrate.
Further, magnetostrictive thin film Metglass, Tb-Dy-Fe, FeCo, FeCoB, FeGaB, NiZn ferrite,
One of Ni-Co ferrite or SmFe, buffer layer Al2O3, one of MgO, Pt, Cu, Ag or Au.
Further, one of electrode material Au, Ag, Al, Cu, Pt, W, Ti, Mo or AlN；Piezoelectric layer is piezoresistive material
Material, piezoelectric material AlN, quartz, LiNbO3、BaTiO3、ZnO、Pb(Zr,Ti)O3、Pb(Mg,Nb)O3-PbTiO3、Pb(Zn,
Nb)O3-PbTiO3Or BiScO3-PbTiO3One of.
Further, a kind of preparation method of the magnetoelectricity antenna structure of acoustics driving, comprising the following steps:
1) pretreatment of matrix: matrix ultrapure water is first cleaned by ultrasonic three minutes by the first step, then ultrasonic with dehydrated alcohol
Cleaning one minute is cleaned 30 seconds with ultrapure water, and ultrapure water cleans three times in total；Second step is cleaned by ultrasonic one minute with acetone,
Ultrapure water cleans 30 seconds, and ultrapure water cleans three times in total.The mixing that the third step concentrated sulfuric acid and dioxygen water volume ratio are 3:1 is molten
Liquid cleans matrix 30 minutes, is finally cleaned six times with ultrapure water, each scavenging period 30 seconds；4th step will clean up
Matrix is dried surface water droplet with drying instrument, is put into baking oven, and setting temperature is 120 degree, and dry two hours spare；
2) in grown above silicon acoustic impedance film Mo, with a thickness of 1 μm；
3) low acoustic impedance film SiO is deposited on high impedance film Mo2, with a thickness of 948nm；It successively sinks by the same way
Product high three periods of low acoustic impedance film；
4) define bottom electrode figure: first passing through photoetching process makes photoresist exposure development form the pattern needed, herein
Bottom electrode is set as rectangular electrode, and material is selected as Au；Then deposit metal electrodes Au on a photoresist, finally by removing
Technique obtains bottom electrode pattern；
5) piezoelectric layer structure: the depositing piezoelectric film AlN on bottom electrode, deposition thickness 700nm are then thin in piezoelectricity
Spin coating photoresist on film obtains the pattern of piezoelectric layer thin film by lithography and etching technique；
6) it connects the via etch of bottom electrode: by lithography alignment and etching technics, etching through-hole over the piezoelectric layer
For connecting bottom electrode；
7) patterning of top electrodes: first passing through photoetching process makes photoresist exposure development form the pattern needed, herein
Top electrodes are set as rectangular electrode, and material is selected as Au；Then deposit metal electrodes Au on a photoresist, finally by removing
Technique obtains bottom electrode pattern；
8) magnetostrictive layer is deposited and patterned: magnetron sputtering deposits FeCoB/Al2O3Film, then by photoetching and
The pattern of stripping technology acquisition magnetostrictive layer.
Compared with prior art, the present invention has following technical effect:
Acoustics of the invention drives miniature magnetoelectricity antenna with Prague acoustic reflecting layer instead of air gap structure and back
The structure emptied, this improvement eliminate complicated etching technics, not only increase the mechanical strength of magnetoelectricity antenna, and multilayer
The heat dissipation that the presence in reflecting layer has conducive to device.Meanwhile manufacturing cost has been saved, improve the yield of device.
Detailed description of the invention
Fig. 1 is schematic structural view of the invention；
Wherein: 1, matrix；2, acoustic impedance film；3, low acoustic impedance film；4, bottom electrode；5, piezoelectric layer；6, top
Electrode；7, magnetostrictive layer；8, Prague acoustic reflecting layer.
Specific embodiment
Below in conjunction with attached drawing, the present invention is further described:
Referring to Fig. 1, a kind of miniature magnetoelectricity antenna structure of acoustics driving, including matrix 1, Prague acoustic reflecting layer 8, bottom
Portion's electrode 4, top electrodes 6, piezoelectric layer 5 and magnetostrictive layer 7；Prague acoustic reflecting layer 8 is arranged in 1 upper surface of matrix, Bradley
Piezoelectric layer 5 is arranged in the upper surface of lattice acoustic reflecting layer 8, and bottom is arranged between the lower part and Prague acoustic reflecting layer 8 of 5 one end of piezoelectric layer
Electrode 4；The upper surface of piezoelectric layer 5 is provided with top electrodes 6 and magnetostrictive layer 7.
Prague acoustic reflecting layer 8 includes acoustic impedance film 2 and low acoustic impedance film 3；One acoustic impedance film 2 and one
A low acoustic impedance film 3 forms one high low acoustic impedance film, and the setting of low acoustic impedance film 3 of each high low acoustic impedance film exists
2 upper surface of acoustic impedance film；Prague acoustic reflecting layer 8 is that several high low acoustic impedance film stacks add to be formed.
Prague acoustic reflecting layer is made of acoustic impedance film 2 and low acoustic impedance film 3, and wherein acoustic impedance film 2 is
W, one of Mo, AlN, Pt, Au, W or SiN, low acoustic impedance film 3 are SiO2, one of Ti, ZnO, SiOC or Al.
Magnetostrictive layer 7 is arranged at intervals on the upper surface of piezoelectric layer 5, the magnetostrictive layer 7 of 5 upper surface one end of piezoelectric layer
Top electrodes 6 are set between piezoelectric layer 5.
Magnetostrictive layer 7 includes magnetostrictive thin film and buffer layer；Magnetostrictive layer by one or a cycle more than
Magnetostrictive thin film and buffer layer be alternatively formed, for reducing the vortex current of magnetic material in high frequency；Matrix 1 is silicon substrate
Body.
Magnetostrictive thin film is Metglass, Tb-Dy-Fe, FeCo, FeCoB, FeGaB, NiZn ferrite, Ni-Co iron oxygen
One of body or SmFe, buffer layer Al2O3, one of MgO, Pt, Cu, Ag or Au.
Electrode material is one of Au, Ag, Al, Cu, Pt, W, Ti, Mo or AlN；Piezoelectric layer is piezoelectric material, piezoresistive material
Material is AlN, quartz, LiNbO3、BaTiO3、ZnO、Pb(Zr,Ti)O3、Pb(Mg,Nb)O3-PbTiO3、Pb(Zn,Nb)O3-
PbTiO3Or BiScO3-PbTiO3One of.
A kind of preparation method of the magnetoelectricity antenna structure of acoustics driving, comprising the following steps:
1) pretreatment of matrix: matrix ultrapure water is first cleaned by ultrasonic three minutes by the first step, then ultrasonic with dehydrated alcohol
Cleaning one minute is cleaned 30 seconds with ultrapure water, and ultrapure water cleans three times in total；Second step is cleaned by ultrasonic one minute with acetone,
Ultrapure water cleans 30 seconds, and ultrapure water cleans three times in total.The mixing that the third step concentrated sulfuric acid and dioxygen water volume ratio are 3:1 is molten
Liquid cleans matrix 30 minutes, is finally cleaned six times with ultrapure water, each scavenging period 30 seconds；4th step will clean up
Matrix is dried surface water droplet with drying instrument, is put into baking oven, and setting temperature is 120 degree, and dry two hours spare；
2) in grown above silicon acoustic impedance film Mo, with a thickness of 1 μm；
3) low acoustic impedance film SiO is deposited on high impedance film Mo2, with a thickness of 948nm；It successively sinks by the same way
Product high three periods of low acoustic impedance film；
4) define bottom electrode figure: first passing through photoetching process makes photoresist exposure development form the pattern needed, herein
Bottom electrode is set as rectangular electrode, and material is selected as Au；Then deposit metal electrodes Au on a photoresist, finally by removing
Technique obtains bottom electrode pattern；
5) piezoelectric layer structure: the depositing piezoelectric film AlN on bottom electrode, deposition thickness 700nm are then thin in piezoelectricity
Spin coating photoresist on film obtains the pattern of piezoelectric layer thin film by lithography and etching technique；
6) it connects the via etch of bottom electrode: by lithography alignment and etching technics, etching through-hole over the piezoelectric layer
For connecting bottom electrode；
7) patterning of top electrodes: first passing through photoetching process makes photoresist exposure development form the pattern needed, herein
Top electrodes are set as rectangular electrode, and material is selected as Au；Then deposit metal electrodes Au on a photoresist, finally by removing
Technique obtains bottom electrode pattern；
8) magnetostrictive layer is deposited and patterned: magnetron sputtering deposits FeCoB/Al2O3Film, then by photoetching and
The pattern of stripping technology acquisition magnetostrictive layer.
The above embodiment of the present invention is only example to illustrate the invention, and is not to implementation of the invention
The restriction of mode.For those of ordinary skill in the art, other can also be made not on the basis of the above description
With the variation and variation of form.Here all embodiments can not be exhaustive.It is all to belong to technical solution of the present invention
Changes and variations that derived from are still in the scope of protection of the present invention.
Claims (8)
1. a kind of miniature magnetoelectricity antenna structure of acoustics driving, which is characterized in that including matrix (1), Prague acoustic reflecting layer
(8), bottom electrode (4), top electrodes (6), piezoelectric layer (5) and magnetostrictive layer (7)；Prague acoustic reflecting layer (8) setting exists
Piezoelectric layer (5) are arranged in the upper surface of matrix (1) upper surface, Prague acoustic reflecting layer (8), the lower part of piezoelectric layer (5) one end and cloth
Bottom electrode (4) are set between glug acoustic reflecting layer (8)；The upper surface of piezoelectric layer (5) is provided with top electrodes (6) and mangneto is stretched
Contracting layer (7).
2. a kind of magnetoelectricity antenna structure of acoustics driving according to claim 1, which is characterized in that Prague acoustic reflecting layer
It (8) include acoustic impedance film (2) and low acoustic impedance film (3)；One acoustic impedance film (2) and a low acoustic impedance film
(3) one high low acoustic impedance film is formed, low acoustic impedance film (3) setting of each high low acoustic impedance film is thin in acoustic impedance
Film (2) upper surface；Prague acoustic reflecting layer (8) is that several high low acoustic impedance film stacks add to be formed.
3. a kind of magnetoelectricity antenna structure of acoustics driving according to claim 2, which is characterized in that Prague acoustic reflecting layer
It is made of acoustic impedance film (2) and low acoustic impedance film (3), wherein acoustic impedance film (2) is W, Mo, AlN, Pt, Au, W
Or one of SiN, low acoustic impedance film (3) is SiO2, one of Ti, ZnO, SiOC or Al.
4. a kind of magnetoelectricity antenna structure of acoustics driving according to claim 1, which is characterized in that magnetostrictive layer (7)
Be arranged at intervals on the upper surface of piezoelectric layer (5), the magnetostrictive layer (7) of piezoelectric layer (5) upper surface one end and piezoelectric layer (5) it
Between be arranged top electrodes (6).
5. a kind of magnetoelectricity antenna structure of acoustics driving according to claim 1, which is characterized in that magnetostrictive layer (7)
Including magnetostrictive thin film and buffer layer；Magnetostrictive layer is by magnetostrictive thin film and buffering more than one or a cycle
Layer is alternatively formed, for reducing the vortex current of magnetic material in high frequency；Matrix (1) is silicon substrate.
6. a kind of magnetoelectricity antenna structure of acoustics driving according to claim 5, which is characterized in that magnetostrictive thin film is
One of Metglass, Tb-Dy-Fe, FeCo, FeCoB, FeGaB, NiZn ferrite, Ni-Co ferrite or SmFe, buffering
Layer is Al2O3, one of MgO, Pt, Cu, Ag or Au.
7. a kind of magnetoelectricity antenna structure of acoustics driving according to claim 1, which is characterized in that electrode material Au,
One of Ag, Al, Cu, Pt, W, Ti, Mo or AlN；Piezoelectric layer is piezoelectric material, piezoelectric material AlN, quartz, LiNbO3、
BaTiO3、ZnO、Pb(Zr,Ti)O3、Pb(Mg,Nb)O3-PbTiO3、Pb(Zn,Nb)O3-PbTiO3Or BiScO3-PbTiO3In
It is a kind of.
8. a kind of preparation method of the magnetoelectricity antenna structure of acoustics driving, which is characterized in that any one based on claim 1 to 7
A kind of magnetoelectricity antenna structure of acoustics driving described in, comprising the following steps:
1) pretreatment of matrix: matrix ultrapure water is first cleaned by ultrasonic three minutes by the first step, then is cleaned by ultrasonic with dehydrated alcohol
It one minute, is cleaned 30 seconds with ultrapure water, ultrapure water cleans three times in total；Second step is cleaned by ultrasonic one minute with acetone, ultrapure
Water cleans 30 seconds, and ultrapure water cleans three times in total；The mixed solution that the third step concentrated sulfuric acid and dioxygen water volume ratio are 3:1 is clear
It washes matrix 30 minutes, is finally cleaned six times with ultrapure water, each scavenging period 30 seconds；The matrix that 4th step will clean up
Surface water droplet is dried with drying instrument, is put into baking oven, setting temperature is 120 degree, and dry two hours spare；
2) in grown above silicon acoustic impedance film Mo, with a thickness of 1 μm；
3) low acoustic impedance film SiO is deposited on high impedance film Mo2, with a thickness of 948nm；It is sequentially depositing height by the same way
Three periods of low acoustic impedance film；
4) define bottom electrode figure: first passing through photoetching process makes photoresist exposure development form the pattern needed, herein bottom
Electrode is set as rectangular electrode, and material is selected as Au；Then deposit metal electrodes Au on a photoresist, finally by stripping technology
Obtain bottom electrode pattern；
5) piezoelectric layer structure: depositing piezoelectric film AlN, deposition thickness 700nm, then on piezoelectric membrane on bottom electrode
Spin coating photoresist obtains the pattern of piezoelectric layer thin film by lithography and etching technique；
6) it connects the via etch of bottom electrode: by lithography alignment and etching technics, etching through-hole over the piezoelectric layer and be used to
Connect bottom electrode；
7) patterning of top electrodes: first passing through photoetching process makes photoresist exposure development form the pattern needed, herein top
Electrode is set as rectangular electrode, and material is selected as Au；Then deposit metal electrodes Au on a photoresist, finally by stripping technology
Obtain bottom electrode pattern；
8) magnetostrictive layer is deposited and patterned: magnetron sputtering deposits FeCoB/Al2O3Then film passes through photoetching and removing
The pattern of technique acquisition magnetostrictive layer.
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| CN111416211A (en) * | 2020-03-31 | 2020-07-14 | 西安交通大学 | Ultralow frequency magnetoelectric antenna based on inverse magnetoelectric effect and preparation method thereof |
| CN112582780A (en) * | 2020-11-18 | 2021-03-30 | 电子科技大学 | Bulk acoustic wave magnetoelectric array antenna and preparation method thereof |
| CN112615151A (en) * | 2020-12-17 | 2021-04-06 | 武汉理工大学 | Low-frequency mechanical antenna based on piezoelectric-piezomagnetic composite material and manufacturing method thereof |
| WO2021128720A1 (en) * | 2019-12-26 | 2021-07-01 | 四川爆米微纳科技有限公司 | Eddy current suppression structure and manufacturing method therefor |
| CN114438448A (en) * | 2022-01-27 | 2022-05-06 | 四川爆米微纳科技有限公司 | Magnetostrictive composite film for enhancing eddy current loss inhibition efficiency and preparation method thereof |
| CN114566792A (en) * | 2022-03-02 | 2022-05-31 | 中国科学院苏州纳米技术与纳米仿生研究所 | Acoustic drive magnetoelectric antenna and preparation method thereof |
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| WO2021128720A1 (en) * | 2019-12-26 | 2021-07-01 | 四川爆米微纳科技有限公司 | Eddy current suppression structure and manufacturing method therefor |
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| CN111416211A (en) * | 2020-03-31 | 2020-07-14 | 西安交通大学 | Ultralow frequency magnetoelectric antenna based on inverse magnetoelectric effect and preparation method thereof |
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| CN112615151A (en) * | 2020-12-17 | 2021-04-06 | 武汉理工大学 | Low-frequency mechanical antenna based on piezoelectric-piezomagnetic composite material and manufacturing method thereof |
| CN112615151B (en) * | 2020-12-17 | 2022-03-29 | 武汉理工大学 | Low-frequency mechanical antenna based on piezoelectric-piezomagnetic composite material and manufacturing method thereof |
| CN114438448A (en) * | 2022-01-27 | 2022-05-06 | 四川爆米微纳科技有限公司 | Magnetostrictive composite film for enhancing eddy current loss inhibition efficiency and preparation method thereof |
| CN114566792A (en) * | 2022-03-02 | 2022-05-31 | 中国科学院苏州纳米技术与纳米仿生研究所 | Acoustic drive magnetoelectric antenna and preparation method thereof |
| CN114566792B (en) * | 2022-03-02 | 2024-04-19 | 中国科学院苏州纳米技术与纳米仿生研究所 | Acoustic drive magneto-electric antenna and preparation method thereof |
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