CN102937705A - Direct-current magnetic sensor with composite structure - Google Patents
Direct-current magnetic sensor with composite structure Download PDFInfo
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- CN102937705A CN102937705A CN201210470961XA CN201210470961A CN102937705A CN 102937705 A CN102937705 A CN 102937705A CN 201210470961X A CN201210470961X A CN 201210470961XA CN 201210470961 A CN201210470961 A CN 201210470961A CN 102937705 A CN102937705 A CN 102937705A
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Abstract
The invention discloses a direct-current magnetic sensor with a composite structure. The direct-current magnetic sensor with the composite structure comprises a layered structural body composed of a magnetostrictive material layer and a piezoelectric material layer. The direct-current magnetic sensor with the composite structure is characterized in that an amorphous alloy film layer is arranged on the magnetostrictive material layer, and the amorphous alloy film layer and the piezoelectric material layer are respectively located on two sides of a large plane of the magnetostrictive material layer. The direct-current magnetic sensor with the composite structure has the advantages of improving direct-current sensitivity, being small in size, and facilitating manufacturing of small high-sensitivity magnetic sensors. Compared with a traditional magnetostrictive material/ piezoelectric material composite magnetic sensor, the direct-current magnetic sensor can be used for detecting an alternating-current magnetic field and a direct-current magnetic field and has strong detection functions.
Description
Technical field
The present invention relates to a kind of magnetic-electric reforming unit, relate in particular to a kind of DC magnetic sensor of composite structure.
Background technology
Development along with modern science and technology, Magnetic Sensor not only can be directly used in magnetic-field measurement, also can be used for indirect measurement or the control of other relevant physical quantitys of magnetic field (comprising the physical quantitys such as light, electricity and power), for the develop rapidly of Magnetic Sensor provides better chance, and formed considerable Magnetic Sensor industry.
Traditional superconducting quantum interference device SQUID has high sensitivity, and its sensitivity can reach 10
-14T, but it need under low temperature-273 degree, work, and manufacturing process is complicated, cost is higher, the instrument volume is large, is not easy to carry, these have all limited its range of application; And optical pumping formula Magnetic Sensor, nuclear magnetic resonance Magnetic Sensor and fluxgate sensor exist structure heavy, complicated, expensive, need the defectives such as Power supply, power consumption height; Although induction type magnetic sensor measuring accuracy is higher, the volume of its coil is larger, is unfavorable for the measurement of little space magnetic field, and is not suitable for surveying slow changing magnetic field; Although magnetodiode and triode sensor and Hall magnetic sensor volume are little, lightweight, sensitivity is low, and the measuring accuracy temperature influence is larger; And the sensitivity of semiconductor magnetic-resistance effect sensor and anisotropic magneto-resistive effect sensor magnetic field is lower, is not suitable for measuring Weak magentic-field; Although the sensitivity of giant magnetoresistance effect sensor is higher, be subjected to the restriction of temperature; Owing to there is such or such defective in existing Magnetic Sensor, this just needs research new Magnetic Sensor and measuring method, the range of application and the measure that enriches the magnetic sensing measurement of expansion magnetic sensing.
Development along with emerging magnetic material, researchers have developed a kind of novel based on the compound Magnetic Sensor of magnetostriction materials/piezoelectric (Y. Fetisov, Bush, A.Kamentsev.Magnetic Field Sensors Using Magnetoelectric Effect in Ferrite-piezoelectric Multilayers[C] .Sensors. Proceedings of IEEE, 2004(3): 1106-1108.), because the piezomagnetic coefficient of magnetostriction materials is the functions that add bias magnetic field, and the magnetoelectricity voltage coefficient of magnetostriction/piezo-electricity composite material is directly proportional with piezomagnetic coefficient, so, magnetostriction/piezo-electricity composite material is relevant with the external dc bias magnetic field at the magnetoelectricity voltage that adds output under the alternating magnetic field excitation, utilizes this characteristic to can be used for surveying D.C. magnetic field.On the other hand, the size of extrinsic motivated alternating magnetic field also can affect the mechanical deformation of magnetostriction materials, further affects the magnetoelectricity voltage of piezoelectric layer output.The magnetoelectricity voltage of magnetostriction/piezo-electricity composite material increases with the increase of alternating magnetic field, utilizes this characteristic to can be used for surveying AC magnetic field, so magnetostriction/piezo-electricity composite material has great application potential in D.C. magnetic field and AC magnetic field detection.Have high magnetic field sensitivity and magnetic machine coupled characteristic based on the compound Magnetic Sensor of magnetostriction materials/piezoelectric, it is a kind of passive sensor, need not the electric power input in the sensing process and can directly produce electric signal output, can be prepared into passive AC magnetism sensor, and it is simple in structure, volume is little, it is convenient to measure, and cost is lower, possesses both detectable AC magnetic field, the advantage of detectable D.C. magnetic field makes it have larger advantage than traditional Magnetic Sensor in magnetic-field measurement again.But the D.C. magnetic field sensitivity of the domestic and international magnetostriction materials of reporting/piezoelectric compound magnetic sensor is all lower at present, is not suitable for measuring low-intensity magnetic fields.
Summary of the invention
For the problem in the background technology, the present invention proposes a kind of DC magnetic sensor of composite structure, comprise the layered structure that is formed by magnetostriction materials layer and piezoelectric material layer, its improvement is: be provided with the thin film of amorphous alloy layer at the magnetostriction materials layer, thin film of amorphous alloy layer and piezoelectric material layer lay respectively at the both sides on the large plane of magnetostriction materials layer.
The layered structure that is comprised of magnetostriction materials layer and piezoelectric material layer namely forms the compound Magnetic Sensor of existing magnetostriction materials/piezoelectric, the principle of work of this Magnetic Sensor is: the piezomagnetic coefficient of magnetostriction materials layer is the function of bias magnetic field, under action of alternating magnetic field produces, the magnetostriction materials layer produces mechanical stress, the effect of this mechanical stress is delivered on the piezoelectric material layer by the coupling of interlayer phase interface, because piezoelectric effect makes piezoelectric produce the magnetoelectricity Voltage-output, and the magnetoelectricity Voltage-output changes with the external dc bias magnetic field, utilizes this characteristic to can be used for static state or quasistatic magnetic field sensing.
The present invention program's principle is: on the basis of existing aforementioned Magnetic Sensor, increase by a thin film of amorphous alloy layer, this thin film of amorphous alloy layer can change the magnetic electricity performance of magnetostriction materials, improve the magnetic permeability of the layered structure of magnetostriction materials layer and piezoelectric material layer composition, thereby the piezomagnetic coefficient of magnetostriction materials layer is improved, the quality factor of compound substance have also been improved simultaneously, finally make piezoelectric material layer obtain stronger electricity output, improve the DC sensitivities of sensor.
Based on aforesaid overall plan, the invention allows for following three kinds of preferred structures:
Preferred structure one: layered structure is comprised of two-layer magnetostriction materials layer and one deck piezoelectric material layer, and two-layer magnetostriction materials layer is arranged at respectively the upper and lower both sides on the large plane of piezoelectric material layer; Respectively be provided with one deck thin film of amorphous alloy layer on the large plane of two-layer magnetostriction materials layer outside surface.This structure forms symmetrical structure at thickness direction, and only having a kind of mode of oscillation is extensional vibration mode, and its resonant operational frequency utilizes this characteristic to can be used for the measurement of high frequency AC magnetic field up to more than the 110kHz.
Preferred structure two: layered structure is comprised of one deck magnetostriction materials layer and one deck piezoelectric material layer, and magnetostriction materials layer and piezoelectric material layer overlap; Be provided with one deck thin film of amorphous alloy layer on the large plane of magnetostriction materials layer outside surface.This structure forms unsymmetric structure at thickness direction, therefore has two kinds of mode of oscillations, and namely flexural vibration mode and extensional vibration mode so there are two resonant operational frequency in this device, can be finished the measurement of low frequency and high frequency AC magnetic field simultaneously.
Preferred structure three: layered structure is comprised of two-layer magnetostriction materials layer and two layers of piezoelectric material layer, and the two layers of piezoelectric material ply arranges, and respectively is provided with one deck magnetostriction materials layer on the large plane of two layers of piezoelectric material layer outside surface; Respectively be provided with one deck thin film of amorphous alloy layer on the large plane of two-layer magnetostriction materials layer outside surface.This structure is the same with preferred structure one, what also form is symmetrical structure, but owing to be provided with the two layers of piezoelectric material layer in the structural sheet, the output signal of two layers of piezoelectric material layer is connected, can obtain stronger electricity output, thereby greatly improve the magnetic field sensitivity of sensor.
The shape of magnetostriction materials layer, piezoelectric material layer and thin film of amorphous alloy layer also can adopt following preferred version: the shape of cross section of magnetostriction materials layer, piezoelectric material layer and thin film of amorphous alloy layer is rectangle, wherein, the magnetostriction materials layer is along the length direction magnetization of rectangle, and piezoelectric material layer is along the thickness direction polarization of layered structure.
Further, the thickness of thin film of amorphous alloy layer is not only less than the thickness of magnetostriction materials layer but also less than the thickness of piezoelectric material layer.
Useful technique effect of the present invention is: the DC sensitivities that has improved sensor, and size is less, be conducive to prepare the high-sensitive magnetic sensor device of miniaturization, compare the compound Magnetic Sensor of traditional magnetostriction materials/piezoelectric, sensor of the present invention both can have been surveyed AC magnetic field also can survey D.C. magnetic field, has stronger detecting function.
Description of drawings
The structural representation of Fig. 1, preferred structure of the present invention;
The structural representation of Fig. 2, preferred structure of the present invention two;
The structural representation of Fig. 3, preferred structure of the present invention three.
Embodiment
A kind of DC magnetic sensor of composite structure, comprise the layered structure that is formed by magnetostriction materials layer 1 and piezoelectric material layer 2, its improvement is: be provided with thin film of amorphous alloy layer 3 at magnetostriction materials layer 1, thin film of amorphous alloy layer 3 and piezoelectric material layer 2 lay respectively at the both sides on magnetostriction materials layer 1 large plane.
Further, layered structure is comprised of two-layer magnetostriction materials layer 1 and one deck piezoelectric material layer 2, and two-layer magnetostriction materials layer 1 is arranged at respectively the upper and lower both sides on piezoelectric material layer 2 large planes; Respectively be provided with one deck thin film of amorphous alloy layer 3 on the large plane of two-layer magnetostriction materials layer 1 outside surface.
Further, layered structure is comprised of one deck magnetostriction materials layer 1 and one deck piezoelectric material layer 2, and magnetostriction materials layer 1 and piezoelectric material layer 2 overlap; Be provided with one deck thin film of amorphous alloy layer 3 on the large plane of magnetostriction materials layer 1 outside surface.
Further, layered structure is comprised of two-layer magnetostriction materials layer 1 and two layers of piezoelectric material layer 2, and two layers of piezoelectric material layer 2 overlaps, and respectively is provided with one deck magnetostriction materials layer 1 on the large plane of two layers of piezoelectric material layer 2 outside surface; Respectively be provided with one deck thin film of amorphous alloy layer 3 on the large plane of two-layer magnetostriction materials layer 1 outside surface.
Further, the shape of cross section of magnetostriction materials layer 1, piezoelectric material layer 2 and thin film of amorphous alloy layer 3 is rectangle, and wherein, magnetostriction materials layer 1 is along the length direction magnetization of rectangle, and piezoelectric material layer 2 is along the thickness direction polarization of layered structure.
Further, the thickness of thin film of amorphous alloy layer 3 is not only less than the thickness of magnetostriction materials layer 1 but also less than the thickness of piezoelectric material layer 2.
Claims (6)
1. the DC magnetic sensor of a composite structure, comprise the layered structure that is formed by magnetostriction materials layer (1) and piezoelectric material layer (2), it is characterized in that: be provided with thin film of amorphous alloy layer (3) at magnetostriction materials layer (1), thin film of amorphous alloy layer (3) and piezoelectric material layer (2) lay respectively at the both sides on the large plane of magnetostriction materials layer (1).
2. the DC magnetic sensor of composite structure according to claim 1, it is characterized in that: layered structure is comprised of two-layer magnetostriction materials layer (1) and one deck piezoelectric material layer (2), and two-layer magnetostriction materials layer (1) is arranged at respectively the upper and lower both sides on the large plane of piezoelectric material layer (2); Respectively be provided with one deck thin film of amorphous alloy layer (3) on the large plane of two-layer magnetostriction materials layer (1) outside surface.
3. the DC magnetic sensor of composite structure according to claim 1, it is characterized in that: layered structure is comprised of one deck magnetostriction materials layer (1) and one deck piezoelectric material layer (2), and magnetostriction materials layer (1) and piezoelectric material layer (2) overlap; Be provided with one deck thin film of amorphous alloy layer (3) on the large plane of magnetostriction materials layer (1) outside surface.
4. the DC magnetic sensor of composite structure according to claim 1, it is characterized in that: layered structure is comprised of two-layer magnetostriction materials layer (1) and two layers of piezoelectric material layer (2), two layers of piezoelectric material layer (2) overlaps, and respectively is provided with one deck magnetostriction materials layer (1) on the large plane of two layers of piezoelectric material layer (2) outside surface; Respectively be provided with one deck thin film of amorphous alloy layer (3) on the large plane of two-layer magnetostriction materials layer (1) outside surface.
5. the DC magnetic sensor of composite structure according to claim 1, it is characterized in that: the shape of cross section of magnetostriction materials layer (1), piezoelectric material layer (2) and thin film of amorphous alloy layer (3) is rectangle, wherein, magnetostriction materials layer (1) is along the length direction magnetization of rectangle, and piezoelectric material layer (2) is along the thickness direction polarization of layered structure.
6. the DC magnetic sensor of composite structure according to claim 1 is characterized in that: the thickness of thin film of amorphous alloy layer (3) is not only less than the thickness of magnetostriction materials layer (1) but also less than the thickness of piezoelectric material layer (2).
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| CN106199462A (en) * | 2016-08-29 | 2016-12-07 | 南京理工大学 | A kind of magnetoelectric transducer sensing element reducing vibration noise |
| CN106291406A (en) * | 2015-06-11 | 2017-01-04 | 南京理工大学 | A kind of coil Magnetic Sensor |
| CN107290694A (en) * | 2017-07-18 | 2017-10-24 | 上海交通大学 | Suppress inductive type Magnetic Sensor of direction crosstalk and preparation method thereof |
| CN107703465A (en) * | 2017-09-19 | 2018-02-16 | 中国科学院上海硅酸盐研究所 | Magnetic sensor |
| CN108091982A (en) * | 2017-12-28 | 2018-05-29 | 中国电子科技集团公司第二十六研究所 | Micro-nano film magnetosonic antenna |
| CN108205118A (en) * | 2016-12-19 | 2018-06-26 | 南京理工大学 | A kind of mode of resonance Magnetic Sensor sensing unit and numerical frequency output Magnetic Sensor |
| CN110470880A (en) * | 2019-09-17 | 2019-11-19 | 北京无线电测量研究所 | A kind of current sensor probe, preparation method and the sensor including it |
| CN111896896A (en) * | 2019-05-06 | 2020-11-06 | 上海交通大学 | Giant magneto-impedance magnetic sensor based on magneto-electric double-resonance mode |
| CN112768907A (en) * | 2020-12-28 | 2021-05-07 | 南京步微通信设备有限公司 | Magnetic-electromechanical coupling type miniaturized signal receiving antenna and implementation method |
| CN113030796A (en) * | 2021-03-10 | 2021-06-25 | 洛玛瑞芯片技术常州有限公司 | Magnetic sensor |
| CN113639732A (en) * | 2021-06-29 | 2021-11-12 | 西安交通大学 | Magnetoelectric compass based on layered magnetoelectric composite material and application thereof |
| CN114062978A (en) * | 2021-11-15 | 2022-02-18 | 东南大学 | MEMS magnetic field sensor based on piezoelectric tunnel effect and magnetic field measuring method |
| CN114179476A (en) * | 2021-11-19 | 2022-03-15 | 电子科技大学 | Piezoelectric composite material, manufacturing method and applied sensor |
| CN114609554A (en) * | 2022-05-11 | 2022-06-10 | 电子科技大学 | Length-telescopic resonant magnetic sensor |
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| CN106291406B (en) * | 2015-06-11 | 2019-02-22 | 南京理工大学 | A kind of coil Magnetic Sensor |
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