CN115207207A - Method for manufacturing pressure sensor with composite structure of nitride and magnetostrictive material - Google Patents
Method for manufacturing pressure sensor with composite structure of nitride and magnetostrictive material Download PDFInfo
- Publication number
- CN115207207A CN115207207A CN202211113640.4A CN202211113640A CN115207207A CN 115207207 A CN115207207 A CN 115207207A CN 202211113640 A CN202211113640 A CN 202211113640A CN 115207207 A CN115207207 A CN 115207207A
- Authority
- CN
- China
- Prior art keywords
- layer
- magnetostrictive
- nitride
- pressure sensor
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 100
- 239000000463 material Substances 0.000 title claims abstract description 46
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 239000002131 composite material Substances 0.000 title claims abstract description 22
- 238000005530 etching Methods 0.000 claims abstract description 32
- 238000000151 deposition Methods 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000002161 passivation Methods 0.000 claims abstract description 14
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 27
- 238000001259 photo etching Methods 0.000 claims description 22
- 230000004888 barrier function Effects 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 230000008021 deposition Effects 0.000 claims description 15
- 238000002207 thermal evaporation Methods 0.000 claims description 15
- 238000005566 electron beam evaporation Methods 0.000 claims description 13
- 238000005229 chemical vapour deposition Methods 0.000 claims description 11
- 238000002360 preparation method Methods 0.000 claims description 11
- 238000000137 annealing Methods 0.000 claims description 10
- 238000000231 atomic layer deposition Methods 0.000 claims description 10
- 238000001020 plasma etching Methods 0.000 claims description 10
- 230000010287 polarization Effects 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 8
- 238000001659 ion-beam spectroscopy Methods 0.000 claims description 7
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 7
- 239000000243 solution Substances 0.000 claims description 6
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims description 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 3
- 229910052774 Proactinium Inorganic materials 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000003475 lamination Methods 0.000 claims description 3
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 3
- 150000002902 organometallic compounds Chemical class 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 229910000859 α-Fe Inorganic materials 0.000 claims description 3
- 239000003344 environmental pollutant Substances 0.000 claims description 2
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- 231100000719 pollutant Toxicity 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 abstract description 16
- 239000004065 semiconductor Substances 0.000 abstract description 8
- 230000004044 response Effects 0.000 abstract description 7
- 230000008901 benefit Effects 0.000 abstract description 4
- 230000010354 integration Effects 0.000 abstract description 4
- 238000005303 weighing Methods 0.000 abstract description 4
- 230000036772 blood pressure Effects 0.000 abstract description 3
- 238000012544 monitoring process Methods 0.000 abstract description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 3
- 230000008859 change Effects 0.000 description 13
- 230000008569 process Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- 229910002601 GaN Inorganic materials 0.000 description 9
- 230000003321 amplification Effects 0.000 description 8
- 238000003199 nucleic acid amplification method Methods 0.000 description 8
- 238000001514 detection method Methods 0.000 description 7
- 238000009616 inductively coupled plasma Methods 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- 230000009471 action Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004151 rapid thermal annealing Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910001329 Terfenol-D Inorganic materials 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000005690 magnetoelectric effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- XOFYZVNMUHMLCC-ZPOLXVRWSA-N prednisone Chemical compound O=C1C=C[C@]2(C)[C@H]3C(=O)C[C@](C)([C@@](CC4)(O)C(=O)CO)[C@@H]4[C@@H]3CCC2=C1 XOFYZVNMUHMLCC-ZPOLXVRWSA-N 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000005428 wave function Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N35/00—Magnetostrictive devices
- H10N35/01—Manufacture or treatment
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/12—Measuring force or stress, in general by measuring variations in the magnetic properties of materials resulting from the application of stress
- G01L1/125—Measuring force or stress, in general by measuring variations in the magnetic properties of materials resulting from the application of stress by using magnetostrictive means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/225—Measuring circuits therefor
- G01L1/2262—Measuring circuits therefor involving simple electrical bridges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
- G01L9/04—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of resistance-strain gauges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/16—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in the magnetic properties of material resulting from the application of stress
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N35/00—Magnetostrictive devices
- H10N35/80—Constructional details
- H10N35/85—Magnetostrictive active materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N39/00—Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
A method for manufacturing a pressure sensor with a nitride and magnetostrictive material composite structure belongs to the field of semiconductor sensors. The technical scheme is as follows: s1, preparing a substrate; s2, epitaxial growth; s3, isolating the table top; s4, etching the grid; s5, making ohmic contact between a source electrode and a drain electrode; s6, depositing a dielectric layer; s7, preparing a gate electrode; and S8, depositing a passivation layer and opening an electrode window. Has the advantages that: the high-sensitivity pressure sensor manufacturing method based on the composite nitride and the magnetostrictive material structure can manufacture the high-sensitivity pressure sensor with high pressure sensitivity, small volume, high integration level, large measuring range and high response speed, can further manufacture a sensor array to realize two-dimensional or three-dimensional pressure sensing, and is expected to be applied to the fields of medical blood pressure, petrifaction, industrial electronic weighing, river water level monitoring and the like in the future.
Description
Technical Field
The invention belongs to the field of semiconductor sensors, and particularly relates to a method for manufacturing a high-sensitivity pressure sensor instrument based on a composite nitride and magnetostrictive material structure.
Background
The pressure sensor is a device or a device which senses pressure signals and converts the input pressure signals into output electric signals according to rules, and is widely applied to the fields of medical blood pressure, petrochemical industry, industrial electronic weighing and river water level monitoring. The existing pressure sensors mainly comprise a piezoresistive pressure sensor, a piezoelectric pressure sensor and a capacitance pressure sensor. The piezoresistive pressure sensor utilizes the piezoresistive effect of metal or semiconductor material, the chip resistance changes after being pressed, the bridge loses balance, and a constant current source is added to the bridge to output a corresponding electric signal. The semiconductor processing technology of the sensor is complex, needs additional heating degree compensation measures to inhibit zero drift, and cannot meet the requirement of small temperature drift in the petrochemical industry. The piezoelectric pressure sensor measures the pressure value through the electrode difference generated at the two ends of the piezoelectric material after being pressed, and the static pressure cannot be measured due to the fact that the charge quantity in the collected piezoelectric effect cannot be stored, the dynamic response capability is poor, and the requirement of electronic weighing static pressure in the market cannot be met. After the capacitive pressure sensor is pressed, the capacitance difference between the film electrode and the fixed electrode is converted into a voltage signal, the influence of parasitic capacitance is large, and the processing is difficult to ensure the symmetry. Therefore, the problem that the pressure sensor is small in size, easy to process, high in sensitivity, capable of measuring both static pressure and dynamic pressure and high in response speed is needed to be solved urgently.
Compared with the traditional second generation Si and GaAs semiconductor, the GaN third generation semiconductor material has the forbidden band width of 3.45eV, the critical breakdown electric field of more than 3MV/cm and the electron saturation migration velocity of 2 multiplied by 10 7 cm/s and the like. Due to spontaneous polarization and piezoelectric polarization, high-density two-dimensional electron gas (2 DEG) is generated at the AlGaN/GaN heterojunction interface under the condition of unintentional doping, and the electron mobility of a conductive channel reaches 2000cm 2 /(V · S). The two-dimensional electron gas reacts sensitively to external physical quantities such as gas, magnetic field, phonon, heat and the like, and the pressure source can also cause the concentration of the two-dimensional electron gas to change, and even a small pressure can cause the concentration of the two-dimensional electron gas to change greatly.
The giant magnetostrictive material has high compressive strength and short response time; the electromechanical coupling coefficient is up to 70 percent and is far higher than 40 percent of piezoelectric ceramic PZT in the electrostrictive material; the magnetostriction coefficient is large (about dozens of times of Fe and Ni), and the generated strain is 15 to 30 times higher than that of the piezoelectric ceramic PZT material of the electrostriction material; the material has the delta E effect (the strain changes the magnetic conductivity and the stress state of the magnetostrictive material, and the Young modulus is not constant), can be changed by an external magnetic field, pressure, temperature and prestress, and is suitable for various extremely severe environments; the Curie temperature is above 300 ℃, and the pressure sensor can still stably work at a high temperature of 200 ℃ when being manufactured; there is no deterioration of performance due to aging after long-term use. Terfenol-D (TbDyFe) as rare earth giant magnetostrictiveThe strain value generated by the material under the drive of a low magnetic field is as high as 1500-2000 ppm, which is 5-8 times that of the traditional magnetostrictive material piezoelectric ceramic and 40-50 times that of the nickel-based material. The response speed of the magnetostriction coefficient along with the change of the magnetic field is very high and reaches 10 -6 And s. And has soft magnetic properties, namely low remanence and coercive force.
The device formed by the nitride material has tensile stress in the material, a magnetoelectric effect is generated when the nitride and the magnetostrictive material are combined, the magnetostrictive layer generates magnetostriction (namely magnetostriction coefficient) under the action of a magnetic field, so that the barrier layer of the nitride heterojunction is further deformed, the repetition rate of the basic wave function of electrons and holes is greatly improved after the barrier layer is transmitted to the channel layer, the recombination probability of the two is increased, the integral polarization intensity is changed, the concentration of 2DEG is greatly changed, and the performance of the pressure sensor device is improved. Therefore, the 2DEG is more sensitive to strain caused by pressure at this time, and the sensitivity is greatly increased. Therefore, the invention provides a high-sensitivity pressure sensor based on a composite nitride and magnetostrictive material structure and a manufacturing method thereof.
Most piezoresistive pressure sensors, piezoelectric pressure sensors and capacitive pressure sensors in the market need a plurality of power supplies for power supply, are large in size, difficult to process, slow in response speed and poor in sensitivity. The traditional passive pressure sensor made of giant magnetostrictive materials works by utilizing the principle that a Wheatstone bridge converts deformation change of a magnetostrictive rod after pressure change into voltage signal output, and the upper permanent magnet, the lower permanent magnet and the trapezoidal yoke structure do not need an additional power supply, but have the advantages of low sensitivity, large size, wide occupied area, large influence of temperature, influence of parasitic capacitance effect and poor repeatability.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a high-sensitivity pressure sensor with a composite material structure, which is small in size, easy to process and integrate, high in sensitivity, large in measuring range and high in response speed.
The technical scheme is as follows:
a method for manufacturing a high-sensitivity pressure sensor based on a composite nitride and magnetostrictive material structure comprises the following steps:
s1, substrate preparation: preparing a substrate, cleaning the substrate material, and removing pollutants on the surface of the substrate;
s2, epitaxial growth: epitaxially growing a III-V nitride heterojunction structure, a buffer layer and a magnetostrictive layer by any one of a metal organic compound chemical vapor deposition method, a molecular beam epitaxy method, a hydride vapor phase epitaxy method, a magnetron sputtering method, a Pulse Laser Deposition (PLD) method and an Ion Beam Sputtering Deposition (IBSD);
s3, isolating the table top: after photoetching, electrically isolating the device by adopting a plasma etching method or an ion injection method or a chemical solution wet etching method;
s4, grid etching: after photoetching, etching the gate magnetostrictive layer by adopting a plasma etching method;
s5, source and drain ohmic contact manufacturing: after photoetching, growing a plurality of metal laminations by adopting an electron beam evaporation method or a thermal evaporation method or a magnetron sputtering method, and forming ohmic contact through high-temperature thermal annealing;
s6, depositing a dielectric layer: growing a dielectric layer by adopting a chemical vapor deposition method, an atomic layer deposition method, a magnetron sputtering method or a thermal evaporation method;
s7, preparing a gate electrode: after photoetching, growing a metal thin layer by adopting an electron beam evaporation method or a thermal evaporation method or a magnetron sputtering method to form a gate electrode;
s8, depositing a passivation layer and opening an electrode window: growing a medium passivation layer by adopting a chemical vapor deposition method or an atomic layer deposition method or a magnetron sputtering method or a thermal evaporation method, removing the passivation layer in each electrode area by adopting a dry method or a wet method after photoetching, windowing a lead, growing a metal layer by adopting an electron beam evaporation method or a thermal evaporation method or a magnetron sputtering method, manufacturing a bonding pad and carrying out lead.
Further, in step S2, the thickness of the generated magnetostrictive layer is 50-900 nm, the thickness of the channel layer is 0.1-5 μm, and the thickness of the barrier layer is 2-100 nm; the thickness of the buffer layer is 10-300 nm.
Further, the buffer layer is any one of AIN, gaN, and a superlattice structure.
Furthermore, the III-V nitride heterojunction structure channel layer and the barrier layer are formed, and a contact interface of the channel layer and the barrier layer is induced by polarization charges to generate two-dimensional electron gas.
Further, the barrier layer is any one of AlN, alGaN, and AlGaAs.
Further, the magnetostrictive layer is any one of Fe, tbDyFe, feGaB, smPrFe and ferrite.
Further, the magnetostrictive layer is prepared into a film with the thickness of 50-900 nm by adopting a magnetron sputtering or ion beam sputtering deposition IBSD method, wherein the magnetron sputtering power is 50-300W, the sputtering air pressure is 1-1.5 Pa, and O at the temperature of 400-475 ℃ is obtained after the film is prepared 2 Annealing for 1-3 h in the atmosphere; the sputtering pressure of the ion beam sputtering IBSD is 2.0 × 10 -2 ～3×10 -2 Pa, 19-21 mA ion beam, and O at 150-250 ℃ after the film is prepared 2 Annealing for 1-3 h in the atmosphere.
Further, in step S4, the remaining thickness of the gate magnetostrictive layer after etching is 5 to 20nm.
The beneficial effects of the invention are: the high-sensitivity pressure sensor manufactured by the manufacturing method of the high-sensitivity pressure sensor based on the composite nitride and magnetostrictive material structure is transmitted to the heterojunction barrier layer due to the magnetic strain, the piezoelectric polarization strength is changed to a greater extent, and the 2DEG concentration is changed greatly, so that on the basis, the high-concentration 2DEG is more sensitive to the external pressure to be measured, and the pressure sensitivity is effectively improved; meanwhile, the magnetostrictive film and the III-IV nitride heterojunction are directly combined, so that the problem of large volume of the magnetostrictive rod-shaped material in the traditional magnetostrictive pressure sensor is solved. Therefore, the miniaturized pressure sensor has small volume and high integration level, can be used for manufacturing a sensor array to realize two-dimensional or three-dimensional pressure sensing, and is expected to be applied to the fields of medical blood pressure, petrifaction, industrial electronic weighing, river water level monitoring and the like in the future.
The technical scheme of the high-sensitivity pressure sensor based on the combination of the III-V nitride heterojunction and the magnetostrictive material provided by the invention has the characteristics that: 1) The integration level is high: the composite structure of the nitride heterojunction semiconductor and the magnetostrictive film is used as a sensitive material, so that the manufactured planar device has small volume and high integration level, and can be used for manufacturing an array device to realize two-dimensional or three-dimensional pressure detection; 2) The measuring range is large: the detection type comprises compression type pressure and stretching type pressure, and the detection pressure can be more than +/-100 kPa; 3) The sensitivity is high: the strain generated by the magnetostrictive material under a low magnetic field is large, and the transmission of the magnetostrictive strain to the heterojunction interface changes the energy band bending caused by the piezoelectric polarization of the channel layer to a greater extent, so that the 2DEG is more sensitive to the magnetostrictive strain caused by pressure and the magnetic field.
The key point of the invention lies in the innovation and preparation technology of the sensor. In order to improve the pressure range and sensitivity of measurement, the key point of the invention is that the magnetostrictive film and the III-IV nitride heterojunction are combined together, and the outside pressure is more sensitive to the 2DEG concentration change on the basis of the magnetic strain, thereby effectively improving the sensitivity of the pressure sensor. And converting the change of the strain current into a voltage signal by using a Wheatstone bridge and outputting the voltage signal. The scheme greatly reduces the size of the traditional magnetostrictive pressure sensor, obviously improves the sensitivity and has wider detection pressure range.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the present invention will be described in detail with reference to the accompanying drawings and detailed embodiments, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without inventive exercise. Wherein:
FIG. 1 is a schematic cross-sectional view of a high-sensitivity pressure sensor according to the present invention;
FIG. 2 is a schematic process flow diagram of an embodiment of the present invention;
FIG. 3 is a diagram showing the experimental results of the relationship between pressure, magnetostriction coefficient and output voltage according to the present invention;
FIG. 4 is a block diagram of a circuit device system according to an embodiment of the present invention;
FIG. 5 is a schematic circuit diagram of a signal acquisition and signal amplification module according to an embodiment of the present invention;
FIG. 6 is a schematic circuit diagram of a power module according to an embodiment of the invention;
FIG. 7 is a circuit diagram of a data interface module according to an embodiment of the present invention;
FIG. 8 is a schematic circuit diagram of a main control module of an STM32 single chip microcomputer in the embodiment of the present invention;
FIG. 9 is a schematic diagram of the Wheatstone 1/4 bridge and Wheatstone half bridge testing.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and do not limit the invention.
The method for manufacturing a high-sensitivity pressure sensor based on the composite nitride and magnetostrictive material structure is further described with reference to fig. 1-9.
Example 1
The invention provides a method for manufacturing a high-sensitivity pressure sensor with a composite nitride and magnetostrictive material structure. The invention utilizes the advantages that under the action of an external magnetic field, the piezoelectric polarization strength at the heterojunction interface is reduced after the magnetic strain is transmitted to the channel layer, the 2DEG concentration is changed, the channel carrier is accumulated or exhausted, the integral strain of the magnetostrictive film and the heterojunction interface is larger due to the external pressure, the strain causes the resistance change of the strain gauge of the sensor, the voltage signal output is carried out on the originally balanced Wheatstone 1/4 bridge port due to the resistance change of the strain gauge, and the strain generated by the pressure is converted into the voltage signal to be output.
The device structure schematic diagram of the technical scheme of the invention is shown in figure 1: the substrate is made of silicon, sapphire, silicon carbide, gallium nitride, gallium oxide and diamond materials, a buffer layer and a III-V group heterojunction structure are epitaxially grown on the substrate, a magnetostrictive layer is prepared by magnetron sputtering, a dielectric layer is deposited on an atomic layer, the buffer layer can be AlN or GaN or AlGaN (the thickness is 10 to 300nm), the channel layer is GaN or GaAs (the thickness is 0.1 to 5 mu m), the barrier layer is AlN or AlGaN or AlGaAs (the thickness is 2 to 100 nm), the material components in the barrier layer are not limited, and the magnetostrictive layer is any one of Fe, tbDyFe, feGaB, smPrFe and ferrite. (thickness is 50-900 nm), the source electrode and the drain electrode are in ohmic contact with a composite metal structure, and the gate electrode is in Schottky contact or a metal/dielectric/semiconductor (MIS) structure. The shape of the electrode is not particularly limited, and may be rectangular, circular, or the like. The source electrode and the drain electrode are arranged on two sides of the barrier layer and are respectively contacted with the magnetostrictive layer and the dielectric layer, and the grid electrode is arranged on the dielectric layer.
The technical scheme of the invention is as follows: pressure sensor device R 1 、R 2 、R 3 、R 4 The drain and the source are connected end to form a Wheatstone bridge circuit, wherein R 2 、R 3 、R 4 The surface is wrapped with a magnetic shielding line, two ends of a strain resistance lead of the pressure sensor are respectively connected with two input lines of the Wheatstone bridge, and the size of the potentiometer is adjusted to balance the bridge. The coil provides a bias magnetic field for the sensor, and the sensor generates strain under the combined action of the magnetic field and pressure. The single-chip microcomputer is connected with an external input power supply 12V, voltage signals are generated at the output end of the bridge after the voltage signals are pressed, the bridge converts the measured voltage signals into corresponding voltage signals, and the single-chip microcomputer correspondingly displays the pressure and the corresponding voltage values on the display screen one by one after processing the electric signals.
The wheatstone bridge consists of a balanced bridge of 4 pressure sensor resistors, the 4 resistors being balanced when no external force is applied. When the sensor is deformed by an applied pressure, R 1 Resistance changes, bridgeLosing balance and outputting voltage signal at output end.
The circuit system comprises a signal acquisition module, a signal amplification module, a power supply module, a data interface module and a singlechip main control module. The signal acquisition module and the signal amplification module amplify the voltage signal of the Wheatstone bridge; the power supply module supplies power to the data interface module and the main control module; the data interface module comprises a USB interface and a USB-to-serial port; the single chip microcomputer main control module comprises a main control chip, a storage device, a key, a reset device and a display device, and the pressure and the corresponding voltage are displayed on the OLED display screen according to the calibration values of the pressure and the magnetostriction coefficient after continuous detection.
The device preparation method provided by the invention comprises the following steps:
1) Substrate preparation: preparing a substrate, cleaning the substrate material, and removing contaminants on the surface of the substrate.
2) And (3) epitaxial growth: the method comprises the steps of utilizing Metal Organic Chemical Vapor Deposition (MOCVD), molecular Beam Epitaxy (MBE), hydride Vapor Phase Epitaxy (HVPE), magnetron sputtering, pulse Laser Deposition (PLD) and Ion Beam Sputtering Deposition (IBSD), epitaxially growing a III-V nitride heterojunction structure, a buffer layer and a magnetostrictive layer in any mode, wherein the thickness of the generated magnetostrictive layer is 50-900 nm, the thickness of a channel layer is 0.1-5 mu m, the thickness of a barrier layer is 2-100 nm, the buffer layer can be an AIN, gaN or superlattice structure, and the thickness is 10-300 nm. Sputtering the magnetostrictive film with the thickness of 50-900 nm by adopting an ion beam sputtering IBSD method, wherein the sputtering working air pressure is 2 multiplied by 10 -2 Pa, back pressure 5X 10 -5 Pa, discharge voltage 55V, discharge current 0.3mA, beam current 1KV, ion beam current 20mA, filament current 5A, acceleration voltage 300V and acceleration current 0.5A. After the film preparation is finished, vacuum annealing is carried out for 30min at 200 ℃.
3) Isolating the table top: after photoetching, the device is electrically isolated by adopting a plasma etching or ion implantation or chemical solution wet etching method.
4) And (3) grid etching: and after photoetching, etching the gate magnetostrictive layer by adopting a plasma etching technology, wherein the residual thickness after etching is 5-20 nm.
5) And (3) source and drain ohmic contact manufacturing: after photoetching, growing a plurality of metal laminations by adopting an electron beam evaporation or thermal evaporation or magnetron sputtering method, and forming ohmic contact through high-temperature thermal annealing.
6) Depositing a dielectric layer: and growing the dielectric layer by adopting a chemical vapor deposition or atomic layer deposition or magnetron sputtering or thermal evaporation method.
7) Preparing a gate electrode: and after photoetching, growing a metal thin layer by adopting an electron beam evaporation or thermal evaporation or magnetron sputtering method to form a gate electrode.
8) Deposition of passivation layer and opening of electrode window: growing a medium passivation layer by adopting a chemical vapor deposition or atomic layer deposition or magnetron sputtering or thermal evaporation method, removing the passivation layer in each electrode area by adopting a dry method or a wet method after photoetching, windowing a lead, growing a metal layer by adopting an electron beam evaporation or thermal evaporation or magnetron sputtering method, manufacturing a bonding pad and carrying out lead.
Example 2
A schematic device structure diagram of a high-sensitivity pressure sensor based on a composite nitride and magnetostrictive material structure is shown in fig. 1, and includes: the single-crystal silicon substrate comprises a substrate, a buffer layer, a channel layer, a barrier layer, a magnetostrictive layer, a dielectric layer, a source electrode, a drain electrode and a grid electrode, wherein the 2nmAl buffer layer and the 4 nmAl buffer layer are sequentially grown on the 6-inch Si substrate
GaN channel layer and 25nmAl 0.25 Ga 0.75 The channel layer and the barrier layer form a heterojunction structure, a contact interface of the channel layer and the barrier layer is induced by polarized charges to generate two-dimensional electron gas, and the Tb layer with the thickness of 810nm is sequentially arranged above the barrier layer 0.3 Dy 0.7 Fe 1.9 Magnetostrictive layer, 20nmAl 2 O 3 A dielectric layer; the source electrode and the drain electrode are arranged on two sides of the barrier layer and respectively contact with the dielectric layer and the magnetostrictive layer, and the grid electrode is arranged on the dielectric layer. The distance between the drain electrode and the gate electrode was 4
The implementation process of the target device of the patent application is described as follows:
1) Substrate preparation: a 6-inch Si substrate material was prepared, ultrasonic cleaning was performed for 2 minutes in acetone (MOS grade), boiling was performed for 10 minutes in a positive resist stripping liquid at 60 ℃, ultrasonic cleaning was performed for 3 minutes each for the sample in acetone and ethanol, and the following steps were performed using HF: h 2 O =1 2 And (5) drying.
2) And (3) epitaxial growth: and epitaxially growing an AlGaN/GaN heterojunction structure, a buffer layer AlN and a magnetostrictive layer TbDyFe by using a metal organic compound chemical vapor deposition (MOCVD) mode and a magnetron sputtering method. Channel layer unintentionally doped with GaN thick 4
Barrier layer Al 0.25 Ga 0.75 The thickness of N is 25nm, and the thickness of the buffer layer is AlN 2nm. Tb with thickness of 810nm is prepared above the heterojunction by a radio frequency magnetron sputtering method 0.3 Dy 0.7 Fe 1.9 Film, wherein 99.9% Tb-Dy-Fe alloy target (Tb: dy: fe =0.3 2 Air pressure of 1Pa, target spacing of 60mm, background vacuum degree of 1.5 × 10 -5 Pa, O at 475 ℃ after film preparation 2 And carrying out thermal annealing for 3h in the atmosphere.
3) Isolating the table top: etching the epitaxially grown sample by Reactive Ion Etching (RIE) after photoetching, and adding Cl 2 The flow is controlled to be 15sccm, the cavity pressure is 10mTorr, the etching power is 50W, the etching time is 2.5min, and the etching depth of a two-step method combining conventional power etching and low-power etching is 120nm, so that the conductive channel is completely separated.
4) And (3) grid etching: after photoetching and developing of the sample, adopting Inductively Coupled Plasma (ICP), and utilizing Cl-based gas to etch the grid region to a depth of 800nm, optimizing parameters of an etching process and reducing etching damage.
5) Manufacturing source and drain ohmic contact: after photolithographic development, a Ti/Al/Ni/Au (22/140/55/45 nm) four-layer alloy structure is deposited by electron beam evaporation, and ohmic contact is formed by Rapid Thermal Annealing (RTA) for 30s in nitrogen at 830 ℃.
6) Depositing a dielectric layer: deposition at 200 ℃ for 1h using Atomic Layer Deposition (ALD) to form 20nm of Al 2 O 3 。
7) Preparing a gate electrode: electron beam evaporation deposition of a Gate electrode Ag (100 nm) with a distance between the drain electrode and the gate electrode of 4
Width of 500
。
8) Deposition of passivation layer and opening of electrode window: deposition of 400nm SiO by PECVD 2 Etching the passivation layer by opening holes after photoetching until the contact metal of the electrode is exposed, coating glue (using AZp4620 positive photoresist), spin-coating the photoresist (rotating at 600rpm-3s before, then rotating at 1000rmp-20s before, and finally, the thickness of the photoresist is 1
) And photoetching and developing (80 seconds), etching a window at the surface electrode by utilizing ICP (inductively coupled plasma) etching, and then carrying out magnetron sputtering and depositing 400nm of Al at the lead pad.
FIG. 3 shows the relationship between pressure and magnetostriction coefficient and output voltage of the sensor designed according to the present invention. The pressure range of the device (2.5 mm multiplied by 2.5 mm) can be detected to reach-70kPa to 70kPa (the negative sign is the stretching pressure). When the magnetic field is only 0.4T, the magnetostriction coefficient of the sensor is 15.98 multiplied by 10 -6 Under the action of 0.4T magnetic field and 70KPa tensile pressure, the sensor expansion coefficient reaches maximum 312 multiplied by 10 -6 The magnetostriction coefficient is improved by 18.5%, the output voltage is improved by 1.8mV, and the sensitivity reaches 2.13mV/N.
The key point of the invention is that the magnetostrictive film and the III-IV nitride heterojunction are combined together, and the external pressure is more sensitive to the change of the 2DEG concentration on the basis of the magnetostriction, thereby effectively improving the sensitivity of the pressure sensor. The scheme greatly reduces the size of the traditional magnetostrictive pressure sensor, obviously improves the sensitivity and has wider detection pressure range. The manufacturing process of the device not only reduces the degree of lattice matching, but also ensures that the electrode has good ohmic contact, and greatly improves the performance of the device product. The invention mainly protects the sensor structure design innovation and the device process preparation technology.
Example 3
The present embodiment provides a sensor device testing process as follows:
1) Manufacturing a pressure sensor device of III-IV group nitride combined with magnetostrictive material by a process; 2) After current is supplied to the excitation coil, a bias magnetic field parallel to the surface of the sensor device is generated, the lead is connected with a pressure source and the device, and the sensor device generates magnetic strain under the action of the magnetic field and the pressure; 3) The USB interface is connected to a computer PC, the PC imports a program containing set values of pressure, magnetic field intensity, magnetostriction coefficient, voltage magnitude and duration, the set values of the voltage magnitude and the duration can be a range value, the main control chip calibrates and compensates the detected values of the detected pressure magnitude and output voltage with the imported set values of the voltage magnitude and the voltage, and the pressure and the corresponding output voltage value are displayed on a 0LED display screen.
In one example of the invention, the circuit system comprises a signal acquisition module, a signal amplification module, a power supply module, a data interface module and an STM32 singlechip master control module. The signal acquisition module adopts a Wheatstone 1/4 bridge in FIG. 6 to convert the pressure change into the voltage change; the signal amplification module processes signals mainly by using the AD620 in FIG. 6, and comprises filtering and amplification, wherein the amplification factor is controlled by adjusting an external gain control resistor R of the AD620 g To set, set R g Amplifying the signal by 10 times for 5K Ω; the power supply module adopts USB5V power supply in FIG. 7, converts 5V voltage into 3.3V voltage through the voltage reduction chip TPS73633 and supplies power for the main control chip and the serial port program downloading circuit; meanwhile, an LM2663 negative pressure conversion chip is adopted to convert the 5V voltage into a-5V voltage, so that negative pressure power supply is provided for the signal amplification circuit; the data interface module adopts a one-key downloading circuit and a USB-to-serial port unit CH340C in the figure 8; the model of the STM32 singlechip master control module is shown in FIG. 9STM32F103RCT6 is the main control chip, contains crystal oscillator circuit, data storage FLASH and EEPROM, button BOOT and Key, RESET circuit RESET, OLED display contact pin, and the main control module carries out OLED display through AD conversion with the analog signal conversion digital signal that amplifies to accomplish the detection to pressure.
The target device implementation process of the present patent application:
1) And (3) epitaxial growth: epitaxially growing an AlGaN/GaN heterojunction structure and an AlN buffer layer on a 6-inch silicon substrate by utilizing a Metal Organic Chemical Vapor Deposition (MOCVD) mode, wherein the AlN buffer layer with the thickness of 2nm, a 4 mu mGaN channel layer and Al with the thickness of 25nm are sequentially arranged on the epitaxial layer from bottom to top 0.25 Ga 0.75 An N barrier layer. Preparing a 810nm magnetostrictive film above the heterojunction by a radio frequency magnetron sputtering method, wherein the sputtering power is 50-300W, and Ar is sputtered 2 The air pressure is 1 to 1.5Pa, and the temperature is 400 to 475 ℃ O after the film preparation is finished 2 Annealing for 1-3 h in the atmosphere.
2) Isolating the table top: etching the epitaxially grown sample by Reactive Ion Etching (RIE) after photolithography, and adding Cl 2 The flow is controlled to be 20sccm, the pressure of the cavity is 10mTorr, the etching power is 50W, the etching time is 2.5min, and the etching depth of a two-step method combining conventional power etching and low-power etching is 120nm so as to completely separate the conductive channel.
3) Etching the grid electrode: after photoetching and developing of the sample, adopting Inductively Coupled Plasma (ICP), and utilizing Cl-based gas to etch the grid region to the depth of 800nm, optimizing parameters of an etching process and reducing etching damage.
4) Manufacturing source and drain ohmic contact: after photoetching development, a Ti/Al/Ni/Au (22/140/55/45 nm) four-layer alloy structure is deposited by using electron beam evaporation, and ohmic contact is formed by Rapid Thermal Annealing (RTA) for 20s in nitrogen at 850 ℃.
5) Depositing a dielectric layer: deposition at 200 ℃ for 1h using Atomic Layer Deposition (ALD) to form 20nm of Al 2 O 3 。
6) Preparing a gate electrode: after the photolithographic development, a gate electrode Ag (100 nm) was deposited by electron beam evaporation, the distance between the drain electrode and the gate electrode being 4 μm and the width being 900 μm.
7) Deposition of passivation layer and opening of electrode window: deposition of 300nm SiO by PECVD 2 And (4) opening a hole to expose the electrode contact metal by utilizing an ICP (inductively coupled plasma) etching technology after photoetching of the passivation layer, and then depositing 400nm of Al by magnetron sputtering to form a lead at the electrode to manufacture a bonding pad.
Example 4
In order to further increase the sensitivity of the sensor and the measuring voltage range, the value of the output voltage is increased, and further, the wheatstone 1/4 bridge is changed to a wheatstone half bridge. R in a Wheatstone half-bridge using the principle of converting strain generated by pressure into resistance change of a sensor device 1 、R 3 In order to sense the resistance of the deformation sensor device of the pressure to be measured, the resistance values of the 4 resistors are equal to each other and are R and R in balance 1 And R 3 All the resistance increases are Δ R. The 1 formula is a Wheatstone 1/4 bridge output voltage formula, the 2 formula is a Wheatstone half-bridge output voltage formula, the easily obtained Wheatstone half-bridge output voltage is 2 times of the output voltage of the 1/4 bridge, and the sensitivity is correspondingly improved by 2 times.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be able to cover the technical solutions and the inventive concepts of the present invention within the technical scope of the present invention.
Claims (8)
1. A method for manufacturing a pressure sensor with a nitride and magnetostrictive material composite structure is characterized by comprising the following steps:
s1, substrate preparation: preparing a substrate, cleaning the substrate material, and removing pollutants on the surface of the substrate;
s2, epitaxial growth: epitaxially growing a III-V nitride heterojunction structure, a buffer layer and a magnetostrictive layer by any one of a metal organic compound chemical vapor deposition method, a molecular beam epitaxy method, a hydride vapor phase epitaxy method, a magnetron sputtering method, a Pulse Laser Deposition (PLD) method and an Ion Beam Sputtering Deposition (IBSD);
s3, isolating the table top: after photoetching, electrically isolating the device by adopting a plasma etching method, an ion injection method or a chemical solution wet etching method;
s4, grid etching: after photoetching, etching the gate magnetostrictive layer by adopting a plasma etching method;
s5, source and drain ohmic contact manufacturing: after photoetching, growing a plurality of metal laminations by adopting an electron beam evaporation method or a thermal evaporation method or a magnetron sputtering method, and forming ohmic contact through high-temperature thermal annealing;
s6, depositing a dielectric layer: growing a dielectric layer by adopting a chemical vapor deposition method, an atomic layer deposition method, a magnetron sputtering method or a thermal evaporation method;
s7, preparing a gate electrode: after photoetching, growing a metal thin layer by adopting an electron beam evaporation method, a thermal evaporation method or a magnetron sputtering method to form a gate electrode;
s8, depositing a passivation layer and opening an electrode window: growing a medium passivation layer by adopting a chemical vapor deposition method or an atomic layer deposition method or a magnetron sputtering method or a thermal evaporation method, removing the passivation layer in each electrode area by adopting a dry method or a wet method after photoetching, windowing a lead, growing a metal layer by adopting an electron beam evaporation method or a thermal evaporation method or a magnetron sputtering method, manufacturing a bonding pad and carrying out lead.
2. The method for manufacturing a pressure sensor of a composite structure of nitride and magnetostrictive material according to claim 1, wherein in step S2, the thickness of the generated magnetostrictive layer is 50-900 nm, the thickness of the channel layer is 0.1-5 μm, and the thickness of the barrier layer is 2-100 nm; the thickness of the buffer layer is 10-300 nm.
3. The method for manufacturing a pressure sensor having a composite structure of nitride and magnetostrictive material according to claim 1, wherein in step S4, the remaining thickness of the gate magnetostrictive layer after etching is 5-20 nm.
4. The method for fabricating a composite structure of nitride and magnetostrictive material as claimed in claim 1, wherein said buffer layer is any one of AIN, gaN, or superlattice structure.
5. The method of fabricating a nitride and magnetostrictive material composite structured pressure sensor according to claim 1, wherein the channel layer and the barrier layer of the III-V nitride heterojunction structure are formed such that a contact interface therebetween is induced by polarization charges to generate a two-dimensional electron gas.
6. The method for manufacturing a pressure sensor having a composite structure of nitride and magnetostrictive material according to claim 5, wherein the barrier layer is any one of AlN, alGaN, and AlGaAs.
7. The method of fabricating a nitride and magnetostrictive material composite structured pressure sensor according to claim 2, wherein the magnetostrictive layer is any one of Fe, tbDyFe, feGaB, smPrFe, and ferrite.
8. The method for manufacturing a pressure sensor with a composite structure of nitride and magnetostrictive material according to claim 1, wherein the method for growing the magnetostrictive layer in step S2 comprises the following steps:
preparing a magnetostrictive film with the thickness of 50-900 nm above the heterojunction by a magnetron sputtering method, wherein the sputtering power is 50-300W, the sputtering air pressure is 1-1.5 Pa, and O at 400-475 ℃ is obtained after the film preparation 2 Annealing for 1-3 h in the atmosphere;
preparing a magnetostrictive film with the thickness of 50-900 nm by a method of depositing IBSD (ion beam sputtering) on the heterojunction, wherein the sputtering pressure is 2.0 multiplied by 10 -2 ～3×10 -2 Pa, ionThe beam current is 19-21 mA, and the temperature of the prepared film is 150-250 ℃ O 2 Annealing for 1-3 h in the atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211113640.4A CN115207207B (en) | 2022-09-14 | 2022-09-14 | Method for manufacturing high-sensitivity pressure sensor based on composite nitride and magnetostrictive material structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211113640.4A CN115207207B (en) | 2022-09-14 | 2022-09-14 | Method for manufacturing high-sensitivity pressure sensor based on composite nitride and magnetostrictive material structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115207207A true CN115207207A (en) | 2022-10-18 |
| CN115207207B CN115207207B (en) | 2023-02-24 |
Family
ID=83572435
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211113640.4A Active CN115207207B (en) | 2022-09-14 | 2022-09-14 | Method for manufacturing high-sensitivity pressure sensor based on composite nitride and magnetostrictive material structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115207207B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115683400A (en) * | 2022-09-14 | 2023-02-03 | 大连理工大学 | High-sensitivity pressure sensor based on composite nitride and magnetostrictive material structure, signal acquisition module and circuit system |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6354785A (en) * | 1986-08-25 | 1988-03-09 | Agency Of Ind Science & Technol | Hetero-junction magnetic sensor |
| JPH01245574A (en) * | 1988-03-28 | 1989-09-29 | Agency Of Ind Science & Technol | Heterojunction magnetic sensor |
| US20150364547A1 (en) * | 2014-06-17 | 2015-12-17 | Brolis Semiconductors Ltd. | High-mobility semiconductor heterostructures |
| CN107112413A (en) * | 2014-12-26 | 2017-08-29 | 英特尔公司 | Spin(-)orbit logic unit with charging interconnection and magnetoelectricity node |
| CN209087910U (en) * | 2018-10-12 | 2019-07-09 | 苏州矩阵光电有限公司 | A kind of hall device of integrated amplifier part |
| US20220171001A1 (en) * | 2020-11-27 | 2022-06-02 | Globalfoundries Singapore Pte. Ltd. | Magnetic field sensor and methods of fabricating a magnetic field sensor |
-
2022
- 2022-09-14 CN CN202211113640.4A patent/CN115207207B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6354785A (en) * | 1986-08-25 | 1988-03-09 | Agency Of Ind Science & Technol | Hetero-junction magnetic sensor |
| JPH01245574A (en) * | 1988-03-28 | 1989-09-29 | Agency Of Ind Science & Technol | Heterojunction magnetic sensor |
| US20150364547A1 (en) * | 2014-06-17 | 2015-12-17 | Brolis Semiconductors Ltd. | High-mobility semiconductor heterostructures |
| CN107112413A (en) * | 2014-12-26 | 2017-08-29 | 英特尔公司 | Spin(-)orbit logic unit with charging interconnection and magnetoelectricity node |
| CN209087910U (en) * | 2018-10-12 | 2019-07-09 | 苏州矩阵光电有限公司 | A kind of hall device of integrated amplifier part |
| US20220171001A1 (en) * | 2020-11-27 | 2022-06-02 | Globalfoundries Singapore Pte. Ltd. | Magnetic field sensor and methods of fabricating a magnetic field sensor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115683400A (en) * | 2022-09-14 | 2023-02-03 | 大连理工大学 | High-sensitivity pressure sensor based on composite nitride and magnetostrictive material structure, signal acquisition module and circuit system |
| CN115683400B (en) * | 2022-09-14 | 2024-05-10 | 大连理工大学 | High-sensitivity pressure sensor based on composite nitride and magnetostrictive material structure, signal acquisition module and circuit system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115207207B (en) | 2023-02-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109540987B (en) | Reference electrode-free GaN-based pH sensor based on groove structure and preparation method thereof | |
| CN107732001B (en) | Pressure sensor based on Wheatstone bridge structure and manufacturing method thereof | |
| CN115207207B (en) | Method for manufacturing high-sensitivity pressure sensor based on composite nitride and magnetostrictive material structure | |
| CN111262543A (en) | Scandium-doped aluminum nitride lamb wave resonator and preparation method thereof | |
| Ansari et al. | Gallium nitride-on-silicon micromechanical overtone resonators and filters | |
| CN108649117B (en) | Two-dimensional electronic air channel semi-depletion type Hall sensor and manufacturing method thereof | |
| CN115692510A (en) | Two-dimensional magnetic sensor based on two-dimensional electronic air channel structure and preparation method thereof | |
| CN107680998A (en) | A kind of GaN base p-type grid HFET devices and preparation method thereof | |
| CN108039406B (en) | Magnetic sensor, preparation method and use method thereof | |
| CN109244132B (en) | Transistor and magnetic sensor based on magnetic piezopotential | |
| CN110729396A (en) | Magnetoelectric film sensor with self-amplification capability | |
| Tan et al. | High performance AlGaN/GaN pressure sensor with a Wheatstone bridge circuit | |
| CN108519174B (en) | GaN bridge type absolute pressure sensor and manufacturing method thereof | |
| KR20190015155A (en) | Method for the ultrasonic fingerprint sensor using semiconductor nanorods | |
| CN109540988B (en) | No reference electrode GaN base pH sensor based on interdigital electrode and groove structure | |
| CN110890457B (en) | High-temperature Hall sensor integrating back vertical type and front horizontal type three-dimensional magnetic field detection functions and manufacturing method thereof | |
| CN110729394A (en) | Negative resistance type GaN pressure sensor and preparation method thereof | |
| JP2007227850A (en) | Pressure sensor, and its manufacturing method | |
| CN115683400B (en) | High-sensitivity pressure sensor based on composite nitride and magnetostrictive material structure, signal acquisition module and circuit system | |
| CN110783450A (en) | Magnetic field sensor based on gallium nitride/aluminum gallium nitrogen heterojunction | |
| CN110459471B (en) | Preparation method of GaN-based pH sensor with double-gate structure | |
| JP5048033B2 (en) | Manufacturing method of semiconductor thin film element | |
| CN116735041A (en) | Pressure sensor and preparation method thereof | |
| KR101808679B1 (en) | Super-thin hall sensor and manufacturing method thereof | |
| CN111755576A (en) | Amorphous gallium oxide etching method and application in three-terminal device and array imaging system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |