CN115663086A - Light emitting diode and light emitting device - Google Patents
Light emitting diode and light emitting device Download PDFInfo
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- CN115663086A CN115663086A CN202211257547.0A CN202211257547A CN115663086A CN 115663086 A CN115663086 A CN 115663086A CN 202211257547 A CN202211257547 A CN 202211257547A CN 115663086 A CN115663086 A CN 115663086A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
Abstract
The invention provides a light emitting diode, which comprises an epitaxial structure, a first insulating layer, a connecting electrode, a second insulating layer and a bonding pad, wherein the epitaxial structure comprises a first conductive type semiconductor layer, a light emitting layer and a second conductive type semiconductor layer which are sequentially stacked; the first insulating layer is arranged on the epitaxial structure and provided with a first opening and a second opening; the connection electrode includes a first connection electrode connected to the first conductive type semiconductor layer through the first opening and a second connection electrode connected to the first conductive type semiconductor layer through the second opening; the second insulating layer is provided over the connection electrodes and has a third opening located over the first connection electrode and a fourth opening located over the second connection electrode, an area of the fourth opening is not less than 50% of an area of the second connection electrode, the first pad is connected to the first connection electrode through the third opening, and the second pad is connected to the second connection electrode through the fourth opening. Therefore, current diffusion and heat diffusion can be enhanced, and overall stability is improved.
Description
Technical Field
The present invention relates to the field of light emitting diode manufacturing technologies, and in particular, to a light emitting diode and a light emitting device with high reliability.
Background
Light Emitting Diodes (LEDs) have the advantages of low cost, high lighting efficiency, energy saving, environmental protection, and the like, and are widely used in lighting, visible Light communication, light Emitting display, and other scenes. The LED chip is divided into a forward mounting structure, an inverted mounting structure and a vertical structure. Compared with the traditional forward chip, the flip LED chip structure is characterized in that the diode structure is inverted, light rays are emitted from one side of sapphire, and one side of an electrode can be fixed on a substrate with better heat dissipation.
At present, the development of flip LED chip structures in the industry is all developed comprehensively, and higher requirements are put forward on the stability of the flip LED chip structures. In addition to improving the photoelectric conversion efficiency, reducing the generation of heat and improving the heat dissipation capability, the damage to the LED chip structure caused by the larger stress of the package substrate should be reduced as much as possible.
The existing flip LED chip structure usually adopts a design mode of overlapping a p pad (pad) and an n pad, and uses an insulating protective film layer as an electrical isolation layer between the p pad and the n pad, considering the problem of internal thermal resistance, the insulating protective film layer is too thick, the heat dissipation is poor, but if the insulating protective film layer is thinner, the insulating protective film layer can be damaged more easily due to heat damage, external stress and other reasons in the aging process, so that a leakage channel is formed between the p pad and the n pad, and the whole flip LED chip structure fails. Therefore, how to improve the problem of poor stability of the LED chip caused by the damage of the insulating protection film layer has become one of the technical problems to be solved by those skilled in the art.
Disclosure of Invention
In order to solve the problem of poor stability of the chip structure, the invention provides a light emitting diode which comprises an epitaxial structure, a first insulating layer, a connecting electrode, a second insulating layer and a bonding pad.
The epitaxial structure comprises a first conductive type semiconductor layer, a light emitting layer and a second conductive type semiconductor layer which are sequentially stacked from bottom to top.
The first insulating layer is arranged on the epitaxial structure and is provided with a first opening and a second opening.
The connection electrode includes a first connection electrode and a second connection electrode, which are disposed on the first insulating layer at a predetermined interval, the first connection electrode being electrically connected to the first conductive type semiconductor layer through the first opening, and the second connection electrode being electrically connected to the first conductive type semiconductor layer through the second opening.
The second insulating layer is disposed on the connection electrode and has a third opening and a fourth opening, the third opening being located above the first connection electrode, the fourth opening being located above the second connection electrode, wherein a horizontal projection area of the fourth opening is not less than 50% of a horizontal projection area of the second connection electrode.
The bonding pads comprise a first bonding pad and a second bonding pad, the first bonding pad and the second bonding pad are arranged on the second insulating layer at intervals with preset distances, the first bonding pad is electrically connected with the first connecting electrode through the third opening, and the second bonding pad is electrically connected with the second connecting electrode through the fourth opening.
In one embodiment, an edge of the second connection electrode and an edge of the fourth opening of the second insulating layer have a first minimum distance, and the first minimum distance is less than or equal to 30 micrometers.
In an embodiment, a ratio of a horizontally projected area of the second connection electrode to a horizontally projected area of the second pad is greater than 50% and less than 100%.
In an embodiment, the second bonding pad covers the second connection electrode, and a covered area of the second bonding pad exceeds an edge of an area where the second connection electrode is located when viewed from above the light emitting diode.
In an embodiment, a second minimum distance is formed between an edge of the second connection electrode and an edge of the second pad, and the second minimum distance is between 0 and 20 micrometers.
In one embodiment, the edge of the second connection electrode and the edge of the first connection electrode have a third minimum distance therebetween, and the third minimum distance is greater than 5 micrometers and less than or equal to 30 micrometers.
In one embodiment, the second connection electrode is surrounded by the first connection electrode when viewed from above the light emitting diode.
In an embodiment, when viewed from above the light emitting diode, a fourth minimum distance is formed between an edge of the second pad and an edge of an outer side of the first connection electrode, and the fourth minimum distance is between 0 and 20 micrometers. The distance between the second bonding pad and the first connecting electrode is reduced as much as possible, so that the damage of stress to the insulating layer is reduced.
In an embodiment, the light emitting diode further includes a plurality of via holes penetrating from the second conductive type semiconductor layer to the first conductive type semiconductor layer to expose the first conductive type semiconductor layer, and the first openings correspond to the via holes.
In one embodiment, the plurality of via holes are located outside the second connection electrode.
In one embodiment, a distance between an edge of the second connection electrode and a center of the via hole is 100 μm or less.
In one embodiment, the second pad covers a portion of the via hole.
In one embodiment, the second pad covers the via hole adjacent to the edge of the second connection electrode.
In an embodiment, the light emitting diode has four sides, and the via holes are formed between the second connection electrode and the four sides of the light emitting diode when the light emitting diode is viewed from above.
In one embodiment, the light emitting diode further includes a reflective layer disposed on the second conductive type semiconductor layer and a barrier layer disposed on the reflective layer, the first insulating layer covers the barrier layer and the reflective layer, the second opening exposes the barrier layer, and the second connection electrode is electrically connected to the barrier layer through the second opening.
In one embodiment, the reflective layer is a silver metal reflective layer.
In one embodiment, the light emitting diode further includes a transparent conductive layer covering a surface of the second conductive type semiconductor layer, and a third insulating layer disposed on the transparent conductive layer and having a fifth opening to expose the transparent conductive layer, wherein the reflective layer is disposed on the third insulating layer and electrically connected to the transparent conductive layer through the fifth opening.
In an embodiment, the first insulating layer further has a pin opening located at a center of the light emitting diode, and the pin opening has a pin metal block therein.
In an embodiment, the second insulating layer covers the thimble metal block.
In one embodiment, the shape of the fourth opening is the same as the shape of the second connection electrode.
In one embodiment, the second connection electrode is in the shape of a block with teeth on the peripheral edge.
In an embodiment, a horizontal projection area of the fourth opening is less than 100% of a horizontal projection area of the second connection electrode.
The invention also provides a light-emitting device which adopts the light-emitting diode.
According to the light emitting diode provided by the invention, the horizontal projection area of the fourth opening is not less than 50% of the horizontal projection area of the second connecting electrode, so that the contact area between the second connecting electrode and the second bonding pad is increased, good heat dissipation performance is realized, the short circuit risk caused by the fracture of the second insulating layer is reduced, and the overall reliability is improved.
The LED can also reduce the overlapping area of the second bonding pad and the first connecting electrode by setting the horizontal projection area proportion of the second connecting electrode and the second bonding pad to be more than 50% and less than 100%, and further avoid the risk of short circuit between the second bonding pad and the first connecting electrode due to the rupture of the second insulating layer caused by external force.
In addition, the bonding pad is in direct contact with the connecting electrode, and has good current diffusion and heat dissipation performance; the shape of the fourth opening is the same as that of the second connection electrode, and the area of the fourth opening is close to that of the second connection electrode, so that the area of the opening of the fourth opening is ensured to be attached to the edge of the second connection electrode as far as possible.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts; in the following description, the drawings are illustrated in a schematic view, and the drawings are not intended to limit the present invention.
Fig. 1 is a schematic top view of a light emitting diode according to an embodiment of the invention;
FIG. 2 isbase:Sub>A schematic longitudinal cross-sectional view taken along section line A-A of FIG. 1;
FIG. 3 is a schematic longitudinal cross-sectional view taken along section line B-B of FIG. 1;
fig. 4A to 9C are schematic top-view structural diagrams and cross-sectional diagrams of a light emitting diode provided in an embodiment of the invention at various stages in a manufacturing process;
fig. 10 is a schematic top view of a light emitting diode according to another embodiment of the present invention;
fig. 11 isbase:Sub>A schematic longitudinal sectional view taken along the sectional linebase:Sub>A-base:Sub>A of fig. 10.
Reference numerals:
10. 70 light emitting diodes; 11 a substrate; 13 an epitaxial structure; 131 a first conductive type semiconductor layer; 132 a light emitting layer; 133 a second conductive type semiconductor layer; 15 a reflective layer; 17 a barrier layer; 19 a first insulating layer; 21 connecting the electrodes; 211 a first connecting electrode; 212 a second connection electrode; 213 thimble metal layer; 23 a second insulating layer; 25 pads; 251 a first pad; 252 a second pad; 50 via holes; 51 a first opening; 52 a second opening; 53 third opening; 54 a fourth opening; 55, opening a thimble; 56 a fifth opening; 27 a transparent conductive layer; 29 a third insulating layer; 214 a first surface; d1 a first minimum spacing; d2 a second minimum pitch; d3 a third minimum pitch; d4 a fourth minimum spacing; and D5, spacing.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some embodiments of the present invention, but not all embodiments; the technical features devised in the different embodiments of the invention described below can be combined with each other as long as they do not conflict with each other; all other embodiments, which can be obtained by a person skilled in the art without inventive step based on the embodiments of the present invention, are within the scope of protection of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "lateral", "up", "down", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, indicate orientations and positional relationships based on those shown in the drawings, are only for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or component in question must have a particular orientation or be constructed and operated in a particular orientation, and therefore, should not be taken as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless otherwise specified. In addition, the term "comprises" and any variations thereof mean "including at least".
In the description of the present invention, it should be noted that, unless otherwise specifically stated or limited, the terms "mounted," "connected" and "connected" should be interpreted broadly, and may include, for example, a fixed connection, a detachable connection, an integrated connection, a mechanical connection, an electrical connection, a direct connection, an indirect connection through an intermediate medium, and a communication between two components. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used herein, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
Referring to fig. 1, fig. 2 and fig. 3, fig. 1 isbase:Sub>A schematic top view ofbase:Sub>A light emitting diode 10 according to an embodiment of the present invention, fig. 2 isbase:Sub>A schematic longitudinal cross-sectional view taken alongbase:Sub>A linebase:Sub>A-base:Sub>A of fig. 1, and fig. 3 isbase:Sub>A schematic longitudinal cross-sectional view taken alongbase:Sub>A line B-B of fig. 1. To achieve at least one of the advantages or other advantages, an embodiment of the present invention provides a light emitting diode 10. As shown in the drawing, the light emitting diode 10 includes an epitaxial structure 13, a first insulating layer 19, a connection electrode 21, a second insulating layer 23, and a pad 25.
The epitaxial structure 13 may be disposed on the substrate 11. The substrate 11 may be a transparent substrate or a non-transparent substrate or a semi-transparent substrate, wherein the transparent substrate or the semi-transparent substrate may allow the light emitted from the light emitting layer 132 to pass through the substrate 11 to the side of the substrate 11 away from the epitaxial structure 13, for example, the substrate 11 may be any one of a sapphire flat substrate, a sapphire patterned substrate, a silicon carbide substrate, a gallium nitride substrate, and a glass substrate. In this embodiment, a patterned sapphire substrate is preferred. Although the description is made in the present embodiment in the case where the epitaxial structure 13 is disposed on the substrate 11, the substrate 11 may be omitted.
The epitaxial structure 13 includes a first conductive type semiconductor layer 131, a light emitting layer 132, and a second conductive type semiconductor layer 133 stacked in this order from the bottom up.
The first conductive type semiconductor layer 131 may be a gallium nitride type semiconductor layer doped with an n-type impurity, for example, si, as a layer grown on the substrate 11.
The light emitting layer 132 may have a single quantum well structure or a multiple quantum well structure. The composition and thickness of the well layers in the light-emitting layer 132 determine the wavelength of the light generated. In particular, the light emitting layer 132 that generates different color light such as ultraviolet light, blue light, green light, and the like can be provided by adjusting the composition of the well layer.
The second conductive type semiconductor layer 133 may be a gallium nitride type semiconductor layer doped with p-type impurities, for example, mg. Although each of the first conductive type semiconductor layer 131 and the second conductive type semiconductor layer 133 may be a single layer, the present invention is not limited thereto, and may be a multiple layer, and may further include a superlattice layer. The first conductive type semiconductor layer 131, the light emitting layer 132, and the second conductive type semiconductor layer 133 may be formed on the substrate 11 by a Metal Organic Chemical Vapor Deposition (MOCVD) method, a Molecular Beam Epitaxy (MBE) method, or the like.
The light emitting diode 10 may further include a plurality of via holes 50, wherein the plurality of via holes 50 penetrate from the second conductive type semiconductor layer 133 to the first conductive type semiconductor layer 131 to expose the first conductive type semiconductor layer 131. That is, the area of the first conductive type semiconductor layer 131 is larger than the area of the light emitting layer 132 and is also larger than the area of the second conductive type semiconductor layer 133. As shown in fig. 1, the via holes 50 may be circular, and the shape and number thereof are not particularly limited, and only one via hole 50 may be provided, and if a plurality of via holes 50 are provided, the current may be more uniformly dispersed, and the effect is more excellent. In addition, the via holes 50 may be distributed with a uniform pitch or distributed with a non-uniform pitch according to actual requirements.
The first insulating layer 19 is disposed on the epitaxial structure 13 and has a first opening 51 and a second opening 52. The first insulating layer 19 may partially cover the first conductive type semiconductor layer 131 in the via hole 50 and extend from the first conductive type semiconductor layer 131 to cover a portion of the second conductive type semiconductor layer 133. The first opening 51 corresponds to the position of the via hole 50, the first opening 51 is located in the via hole 50, the first opening 51 is located on the first conductive type semiconductor layer 131, and the second opening 52 is located on the second conductive type semiconductor layer 133. The shapes and numbers of the first openings 51 and the second openings 52 can be selected according to actual requirements.
The connection electrode 21 includes a first connection electrode 211 and a second connection electrode 212. The first connecting electrode 211 and the second connecting electrode 212 are disposed on the first insulating layer 19 with a predetermined distance therebetween for electrical isolation. The first connection electrode 211 is electrically connected to the first conductive type semiconductor layer 131 through the first opening 51, and the second connection electrode 212 is electrically connected to the first conductive type semiconductor layer 131 through the second opening 52. In other words, the first connecting electrode 211 covers the first opening 51, and further covers the bottom of the via hole 50; the second connection electrode 212 covers the second opening 52 to make electrical connection. The first connection electrode 211 may contact a surface of the first conductive type semiconductor layer 131.
The plurality of via holes 50 are located outside the second connection electrode 212. In other words, the second connection electrode 212 is provided between the plurality of via holes 50 in plan view, and does not overlap with the positions of the via holes 50.
The second insulating layer 23 is disposed on the connection electrode 21, and has a third opening 53 and a fourth opening 54. The third opening 53 is positioned above the first connection electrode 211 to expose the first connection electrode 211. The fourth opening 54 is located above the second connection electrode 212 to expose the second connection electrode 212. That is, the second insulating layer 23 may partially cover the first and second connection electrodes 211 and 212. The shapes and the numbers of the third openings 53 and the fourth openings 54 can be selected according to actual requirements.
The bonding pads 25 include a first bonding pad 251 and a second bonding pad 252, and the first bonding pad 251 and the second bonding pad 252 are disposed on the second insulating layer 23 at a predetermined distance to isolate electrical properties. The first pad 251 is electrically connected to the first connection electrode 211 through the third opening 53, and the second pad 252 is electrically connected to the second connection electrode 212 through the fourth opening 54. In other words, the first pad 251 covers the third opening 53, and the fourth pad 25 covers the fourth opening 54, so as to achieve electrical connection. In one embodiment, the second pad 252 may cover a portion of the via hole 50, and preferably, the second pad 252 covers the via hole 50 adjacent to the edge of the second connection electrode 212.
Further, the horizontally projected area of the fourth opening 54 is not less than 50% of the horizontally projected area of the second connection electrode 212. The horizontal projection area refers to a projection area of the light emitting diode 10 on a horizontal plane, where the direction from the epitaxial structure 13 to the bonding pad 25 is a vertical direction perpendicular to the horizontal plane, and the elements (such as the fourth opening 54, the second connection electrode 212, and the like) are projected on the horizontal plane. The horizontal projection area of the fourth opening 54 is the opening area thereof, i.e., the area enclosed by the fourth opening 54 shown in fig. 1, and is the area viewed from above the light emitting diode 10, i.e., the projection area of the fourth opening 54 projected onto the substrate 11 (horizontal plane). The horizontal projection area of the second connection electrode 212 is the area of the second connection electrode 212 shown in fig. 1, and is the area viewed from above the light emitting diode 10, that is, the projection area of the second connection electrode 212 projected onto the substrate 11 (horizontal plane). In an embodiment, the horizontal projection area of the second connection electrode 212 may be the area of the first surface 214 of the second connection electrode 212. By the area ratio, the area of the second insulating layer 23 between the second connection electrode 212 and the second pad 252 can be reduced, the contact area between the second connection electrode 212 and the second pad 252 can be increased, the heat dissipation effect can be improved, and the problem that the second insulating layer 23 is broken due to external force can be avoided. The ratio of the horizontal projection area of the fourth opening 54 to the horizontal projection area of the second connection electrode 212 is more preferably greater than 60% or greater than 70% or greater than 80%.
The horizontally projected area of the fourth opening 54 may be smaller than the horizontally projected area of the second connection electrode 212, that is, the horizontally projected area of the fourth opening 54 is smaller than 100% of the horizontally projected area of the second connection electrode 212, and the fourth opening 54 is located above the second connection electrode 212. It is thereby ensured that the second pad 252 is in contact with the second connection electrode 212 only through the fourth portion 54, and the second pad 252 does not contact the first connection electrode 211.
In addition, in order to reduce the area of the second insulating layer 23 between the second connection electrode 212 and the second pad 252 and increase the contact area between the second connection electrode 212 and the second pad 252 to improve the heat dissipation effect, as an alternative embodiment, when viewed from the top view of fig. 1, a first minimum distance D1 is between an edge of the second connection electrode 212 and an edge of the fourth opening 54 of the second insulating layer 23, and the first minimum distance D1 is less than or equal to 30 micrometers.
In an embodiment, in order to ensure that the horizontal projection area of the second connection electrode 212 is as large as possible as viewed from the top view of fig. 1, it is desirable that the horizontal projection area of the second connection electrode 212 is as close as possible to the horizontal projection area of the second pad 252, and preferably, the overlapping area ratio of the horizontal projection area of the second connection electrode 212 to the horizontal projection area of the second pad 252 is greater than 50% and less than 100%, and more preferably greater than 60% or greater than 70% or greater than 80%. When the overlapping area of the second connection electrode 212 and the second pad 252 is larger, the overlapping area of the second pad 252 and the first connection electrode 211 is correspondingly reduced, so that, in combination with the contact area of the second connection electrode 212 and the second pad 252, the second insulation layer 23 can be reduced from being broken due to an external force, and the risk that the second pad 252 and the first connection electrode 211 are easily short-circuited due to the breakage of the second insulation layer 23 therebetween can be avoided to a certain extent.
As an alternative embodiment, in order to ensure that the horizontal projection area of the second connection electrode 212 is as large as possible, as seen from the top view of fig. 1, a second minimum distance D2 is provided between the edge of the second connection electrode 212 and the edge of the second pad 252, and the second minimum distance D2 is between 0 and 20 micrometers.
As a better embodiment, in order to ensure that the second connection electrode 212 has a larger horizontal projection area, for a large-area and large-size chip, the pitch of the plurality of via holes 50 should be as large as possible to achieve uniform distribution of current. Therefore, the plurality of via holes 50 are disposed around the second connection electrode 212, so that the second connection electrode 212 has a larger horizontal projection area. As shown in fig. 1, the second connecting electrode 212 is a block shape, and the peripheral edge is designed to be tooth-shaped, and can extend to between the adjacent vias 50. In addition, the light emitting diode 10 has four sides distributed opposite to each other in pairs, and when viewed from the top view of fig. 1, the via holes 50 are distributed between the second connection electrode 212 and the four sides of the light emitting diode 10. Preferably, in order to form the second connection electrode 212 between the via holes 50 in a larger area as much as possible, a distance D5 between an edge of the second connection electrode 212 and a center of the via hole 50 is equal to or less than 100 micrometers, or preferably equal to or less than 80 micrometers, or more preferably equal to or less than 60 micrometers.
As shown in fig. 1 in the top view, the overlapping area of the second connection electrode 212 and the second pad 252 is greater than 50% of the area of the second pad 252, i.e., the overlapping area of the second pad 252 and the first connection electrode 211 is less than 50% of the area of the second pad 252.
In addition, as shown in fig. 1 in a plan view, the first connection electrode 211 has an opening therein, and the second connection electrode 212 is positioned in the opening of the first connection electrode 211, i.e., the second connection electrode 211 is surrounded by the first connection electrode 211. The first connection electrode 211 and the second connection electrode 212 may be almost entirely covered over the epitaxial structure 13, leaving only a spacing channel to isolate the electrical properties of the first connection electrode 211 and the second connection electrode 212. That is, the edge of the second connection electrode 212 and the edge of the first connection electrode 211 have a third minimum distance D3 therebetween, and the third minimum distance D3 may be greater than 5 micrometers but less than or equal to 30 micrometers.
In a preferred embodiment, for a large-area and large-size chip, in order to ensure the die bonding capability of the bonding pad 25, as shown in fig. 1, the second bonding pad 252 should have an area as large as possible. The horizontal projected area of the second bonding pad 252 may be larger than that of the second connection electrode 212, that is, the second bonding pad 252 completely covers the second connection electrode 212 and exceeds the edge of the region where the second connection electrode 212 is located. The second bonding pad 252 is located at one side of the center of the light emitting diode 10, and the area of the second bonding pad 252 can simultaneously cover the via hole 50 around the second connection electrode 212, that is, when viewed from the top view in fig. 1, the second connection electrode 212 and the via hole 50 are both located inside the second bonding pad 252. Or, in order to realize that the second pad 252 should have the largest area, a fourth minimum distance D4 is provided between the edge of the second pad 252 and the edge of the outer side of the first connection electrode 212, and the fourth minimum distance D4 is between 0 and 20 micrometers.
In an embodiment, the light emitting diode 10 may further include a reflective layer 15 and a barrier layer 17, the reflective layer 15 being disposed on the second conductive type semiconductor layer 133 to reflect light generated from the light emitting layer 132 to travel to an upper side toward the substrate 11 side. The metal reflective layer 15 is located on the second conductive type semiconductor layer 133 almost entirely and around the via hole 50. The metal reflective layer 15 covers at least 80% of the area of the second conductive type semiconductor layer 133. The distance from the metal reflective layer 15 around the via hole 50 to the center of the via hole 50 is at most 50 μm. The barrier layer 17 is disposed on the reflective layer 15, and the barrier layer 17 covers the upper surface and the edge sidewall of the reflective layer 15, blocking the diffusion of the reflective layer 15. The reflective layer 15 and the barrier layer 17 are both made of metal, the reflective layer 15 is preferably made of silver, and the barrier layer 17 can be made of one or more of Cr, ti, ni or Pt.
The metal reflective layer 15 directly contacts the second conductive type semiconductor layer 133. The first insulating layer 19 covers the barrier layer 17, and the second opening 52 exposes the barrier layer 17 to ensure that the second conductive type semiconductor layer 133 can be electrically connected to the second connection electrode 212.
Since the reflective layer 15 is preferably formed of silver or aluminum, when a current passes through the reflective layer 15, the aluminum or silver is alloyed by oxidation or the like to leave the reflective layer 15. Therefore, the reflective layer 15 needs to be protected from migration of its own material. As the material of the reflective layer 15 migrates, the composition of silver or aluminum of the reflective layer 15 continues to decrease. If the silver or aluminum composition of the reflective layer 15 is insufficient, the resistance of the reflective layer 15 may increase. When the reflective layer 15 is composed of silver and is not covered with the barrier layer, the silver is easily oxidized to form silver oxide due to its high activity. The resistance of the product after silver oxidation will be much greater than the resistance of silver. If the resistance of the reflective layer 15 increases, the electrode will not conduct current. Therefore, the reflective layer 15 needs to be covered by the barrier layer 17 to avoid material migration thereof.
Referring to fig. 4A to 9C, fig. 4A to 9C are schematic top-view structure diagrams and cross-sectional diagrams of a light emitting diode 10 at various stages in a manufacturing process according to an embodiment of the invention. In the drawings, fig. 4A, 5A, 6A, 7A, 8A and 9A are schematic top-view structural diagrams, fig. 4B, 5B, 6B, 7B, 8B and 9B are schematic cross-sectional diagrams of the respective top-view structural diagrams taken alongbase:Sub>A cut-off linebase:Sub>A-base:Sub>A, and fig. 7C, 8C and 9C are schematic cross-sectional diagrams of the respective top-view structural diagrams taken alongbase:Sub>A cut-off line B-B.
First, referring to fig. 4A and 4B, an epitaxial structure 13 including a first conductive type semiconductor layer 131, a light emitting layer 132, and a second conductive type semiconductor layer 133 is grown on a substrate 11. Then, the second conductive type semiconductor layer 133 is etched until the first conductive type semiconductor layer 131 is etched, so that a plurality of via holes 50 are formed. In addition, the edge portion of the epitaxial structure 13 may be selectively removed to further expose the substrate 11 for subsequent processes such as dicing.
Referring to fig. 5A and 5B, a reflective layer 15 is formed on the second conductive type semiconductor layer 133 to reflect light to be emitted from the substrate 11. The reflective layer 15 is a metal reflective layer 15, which can be formed by a lift-off technique. The reflective layer 15 may be formed in a single layer structure or a multi-layer structure, and the layer structure may be formed using an electron beam evaporation method. In one embodiment, the reflective layer 15 does not cover the via hole 50 and the substrate 11 at the edge. The bottom of the reflective layer 15 may include a bottom adhesive layer, which may be selected from nickel or titanium, and the thickness of the adhesive layer is within 10nm to ensure a certain degree of light transmittance.
Referring to fig. 6A and 6B, a barrier layer 17 is formed on the reflective layer 15 to prevent migration of the material of the reflective layer 15. The barrier layer 17 is formed of a metal material. Preferably, the blocking layer 17 covers the side of the reflective layer 15 to completely cover the reflective layer 15.
Referring to fig. 7A, 7B and 7C, the first insulating layer 19 is formed covering a portion of the first conductive type semiconductor layer 131, the light emitting layer 132, the second conductive type semiconductor layer 133 and a portion of the barrier layer 17. The first insulating layer 19 may be formed as SiO using a Chemical Vapor Deposition (CVD) technique or the like 2 Oxide film of the like, nitride film of SiNx or the like, mgF 2 The insulating film of (2). The first insulating layer 19 may be formed in a single-layer structure or a structure in which layers are stacked repeatedly. The structure of the repeating stacked layers may be formed of a Distributed Bragg Reflector (DBR) in which low refractive material layers and high refractive material layers are alternately stacked. For example, by mixing SiO 2 /TiO 2 、SiO 2 /ZrO 2 Or MgF 2 /TiO 2 And the like are laminated to form the insulating reflective layer 15 having a high reflectance.
The first insulating layer 19 has a first opening 51 and a second opening 52. The first opening 51 is located in the via hole 50 to expose the first conductive type semiconductor layer 131, and the second opening 52 is located on the barrier layer 17 to expose the barrier layer 17. In a preferred embodiment, as shown in fig. 7A, the number of the second openings 52 is four, and the second openings are in the shape of long bars and are distributed on the epitaxial structure 13 along the horizontal direction, so as to provide good conductivity. In one embodiment, the surface of the epitaxial structure 13 is provided with a pin region, and the first insulating layer 19 further has a pin opening 55 located in the pin region.
Referring to fig. 8A, 8B, and 8C, a connection electrode 21 is formed on the first insulating layer 19. Specifically, the connection electrodes 21 include a first connection electrode 211 and a second connection electrode 212, and in fig. 8A, the first connection electrode 211 and the second connection electrode 212 are represented by different hatching filling patterns. The first connection electrode 211 and the second connection electrode 212 are disposed on the first insulating layer 19 at a predetermined distance to isolate electrical property, wherein the predetermined distance is a width of a blank portion between the two shadow filling structures in fig. 8A, that is, a lateral distance between the first connection electrode 211 and the second connection electrode 212 in fig. 8C. The spacing distance is preferably between 5 and 50 μm.
The first connection electrode 211 and the second connection electrode 212 may be almost entirely covered over the epitaxial structure 13.
The first connection electrode 211 covers the via hole 50 and the first opening 51, and electrically connects the first conductive type semiconductor layer 131 through the first opening 51; the second connection electrode 212 covers the second opening 52, and is electrically connected to the second conductive type semiconductor layer 133 through the second opening 52. Taking the top view of fig. 8A as an example, the via hole 50 and the second connection electrode 212 do not overlap each other.
In one embodiment, the connection electrode 21 further includes a thimble metal block 213 disposed in the thimble opening 55. The thimble metal block 213 is in direct contact with the barrier layer 17, and the thimble metal block 213 is smaller than the size of the thimble opening 55 and does not form a connection with the first connection electrode 211, so that when the thimble of the transfer device acts on the thimble metal block 213 when the light emitting diode 10 is transferred, the metal layer is deformed by the force but does not affect the first connection electrode 211.
Referring to fig. 9A, 9B, and 9C, a second insulating layer 23 is formed on the connection electrode 21. Specifically, the second insulating layer 23 covers the first connection electrode 211, the ejector pin metal block 213, and the second connection electrode 212, and forms the third opening 53 and the fourth opening 54. The two hatched filling portions in fig. 9A are the opening portions of the third opening 53 and the opening portions of the fourth opening 54, respectively. The third opening 53 is positioned above the first connection electrode 211, the fourth opening 54 is positioned above the second connection electrode 212, and the second openings 52 are all positioned within the fourth opening 54. Wherein the area of the fourth opening 54 is not less than 50% of the area of the first surface 214 of the second connection electrode 212. In one embodiment, the shape of the fourth opening 54 is the same as or similar to the shape of the second connection electrode 212, so as to ensure that the opening of the fourth opening 54 can fit the edge of the second connection electrode 212 as much as possible.
Then, the first pad 251 and the second pad 252 as illustrated in fig. 1, 2, and 3 are formed on the second insulating layer 23. The first pad 251 and the second pad 252 are disposed on the second insulating layer 23 at a distance, the thimble metal block 213 is also disposed between the first pad 251 and the second pad 252, the first pad 251 is electrically connected to the first connection electrode 211 through the third opening 53, and the second pad 252 is electrically connected to the second connection electrode 212 through the fourth opening 54.
Referring to fig. 10 and 11, fig. 10 isbase:Sub>A schematic top view ofbase:Sub>A light emitting diode 70 according to another embodiment of the present invention, and fig. 11 isbase:Sub>A schematic longitudinal sectional view taken along linebase:Sub>A-base:Sub>A of fig. 10. Note that, in order to ensure the clear representation of fig. 10, and the transparent conductive layer 27 and the third insulating layer 29 are covered by an upper element, the transparent conductive layer 27 and the third insulating layer 29 are omitted in the top view of fig. 10, and the transparent conductive layer 27 and the third insulating layer 29 are shown in the cross-sectional view of fig. 11. To achieve at least one of the advantages or other advantages, another embodiment of the present invention further provides a light emitting diode 70. Compared to the led 10 shown in fig. 2, the led 70 of the present embodiment further includes a transparent conductive layer 27 and a third insulating layer 29. The transparent conductive layer 27 covers the surface of the second conductive type semiconductor layer 133 to spread current. The transparent conductive layer 27 may be ITO (indium tin oxide semiconductor transparent conductive film) formed by evaporation or sputtering, or may be made of other materials, such as ZnO, graphene, and the like.
A third insulating layer 29 is providedIs disposed on the transparent conductive layer 27 and has a fifth opening 56 to expose the transparent conductive layer 27. The third insulating layer 29 includes at least SiO 2 Layer, si 3 N 4 Layer of Al 2 O 3 One or a combination of layers, alN layers, DBR layers, and not limited to the examples listed herein. The reflective layer 15 is disposed on the third insulating layer 29 and electrically connected to the transparent conductive layer 27 through the fifth opening 56.
The present embodiment provides a light emitting module, which employs the light emitting diodes 10 and 70 provided in any of the above embodiments, and details of the structure and technical effects are not repeated.
The present embodiment provides a light emitting device, which employs the light emitting diodes 10 and 70 provided in any of the above embodiments, and detailed structures and technical effects thereof are not described again.
Besides the application scenarios of the above embodiments, the light emitting diode 10, 70 provided by the present invention can also be used in the fields including, but not limited to, lighting, automotive, and the like.
The light emitting diodes 10, 70 provided by the present invention can also be used in high power, large size, large light emitting area light emitting diodes including but not limited to lighting, automotive and other fields.
Note that, the area of each layer referred to in the present invention is understood to be a projected area obtained from above the light emitting diode 10 and perpendicular to a horizontal plane, that is, a projected area projected on the substrate 11 or the epitaxial structure 13 from the side of the bonding pad 25. The pitch of each layer in the present invention is the pitch between the projections of each layer on the horizontal plane.
In summary, in the light emitting diode 10, 70 provided by the present invention, by setting the area of the fourth opening 54 to be not less than 50% of the area of the second connection electrode 212, the contact area between the second pad 252 and the second connection electrode 212 can be effectively increased, and the area of the second insulating layer 23 between the second pad 252 and the second connection electrode 212 is reduced, so that the possibility of the second insulating layer 23 being damaged by the external force is reduced, the thermal conductivity of the pad 25 is increased, and the overall reliability of the light emitting diode 10, 70 is improved.
The light emitting diodes 10 and 70 may also reduce the overlapping area between the second bonding pad 252 and the first connection electrode 211 by setting the area ratio between the second connection electrode 212 and the second bonding pad 252 to be greater than 50% and less than 100%, thereby further avoiding the risk of the second insulation layer 23 breaking due to external force and the risk of the second bonding pad 252 and the first connection electrode 211 being short-circuited.
In addition, the bonding pad 25 is in direct contact with the connecting electrode 21 through the opening, and has good current diffusion and heat dissipation performance; the shape of the fourth opening 54 is the same as the shape of the second connection electrode 212, so as to ensure that the opening area of the fourth opening 54 fits the edge of the second connection electrode 212 as much as possible.
In addition, it will be appreciated by those skilled in the art that, although there may be many problems with the prior art, each embodiment or aspect of the present invention may be improved only in one or several respects, without necessarily simultaneously solving all the technical problems listed in the prior art or in the background. It will be understood by those skilled in the art that nothing in a claim should be taken as a limitation on that claim.
Although terms such as epitaxial structure, connection electrode, bonding pad, etc. are used more often herein, the possibility of using other terms is not excluded. These terms are used merely to more conveniently describe and explain the nature of the present invention; they are to be construed as being without limitation to any additional limitations that may be imposed by the spirit of the present invention.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (20)
1. A light-emitting diode is characterized in that,
the light emitting diode includes:
the epitaxial structure comprises a first conductive type semiconductor layer, a light emitting layer and a second conductive type semiconductor layer which are sequentially stacked from bottom to top;
a connection electrode including a first connection electrode electrically connected to the first conductive type semiconductor layer and a second connection electrode electrically connected to the second conductive type semiconductor layer; and
a second insulating layer disposed on the connection electrode and having a third opening and a fourth opening, the third opening being located above the first connection electrode, the fourth opening being located above the second connection electrode;
a pad including a first pad electrically connected to the first connection electrode and a second pad electrically connected to the second connection electrode;
wherein a horizontal projection area of the fourth opening is not less than 50% of a horizontal projection area of the second connection electrode.
2. The led of claim 1, wherein:
the edge of the second connection electrode and the edge of the fourth opening of the second insulating layer have a first minimum distance, and the first minimum distance is less than or equal to 30 micrometers.
3. The led of claim 1, wherein:
and the edge of the second connecting electrode and the edge of the first connecting electrode have a third minimum distance therebetween, and the third minimum distance is greater than 5 microns but less than or equal to 30 microns.
4. The led of claim 1, wherein:
the second connection electrode is surrounded by the first connection electrode when viewed from above the light emitting diode.
5. The led of claim 9, wherein:
the light emitting diode is provided with four side edges, and the through holes are formed between the second connecting electrode and the four side edges of the light emitting diode when the light emitting diode is overlooked from the upper part of the light emitting diode.
6. The led of claim 1, wherein:
the light emitting diode further comprises a reflecting layer and a blocking layer, the reflecting layer is arranged on the second conductive type semiconductor layer, the blocking layer is arranged on the reflecting layer, the first insulating layer covers the blocking layer and the reflecting layer, the second opening exposes the blocking layer, and the second connecting electrode is electrically connected with the blocking layer through the second opening.
7. A light emitting diode according to claim 1, wherein a first insulating layer is provided on said epitaxial structure and has a first opening and a second opening;
the first connection electrode is disposed on the first insulating layer at a predetermined distance from the second connection electrode, the first connection electrode electrically connects the first conductive type semiconductor layer through the first opening, and the second connection electrode electrically connects the second conductive type semiconductor layer through the second opening.
8. The led of claim 1, wherein:
the first insulating layer is further provided with an ejector pin opening which is located in the center of the light-emitting diode, an ejector pin metal block is arranged in the ejector pin opening, and the second insulating layer covers the ejector pin metal block.
9. The led of claim 1, wherein: the fourth opening has the same shape as the second connection electrode.
10. The led of claim 1, wherein: the second connecting electrode is in a block shape with toothed edges at the periphery.
11. The led of claim 1, wherein: the horizontal projection area of the fourth opening is less than 100% of the horizontal projection area of the second connection electrode.
12. The led of claim 1, wherein:
the ratio of the horizontal projection area of the fourth opening of the second insulating layer to the horizontal projection area of the second connecting electrode is more than 60%, or more than 70%, or more than 80%.
13. The led of claim 1, wherein: the first connection electrode has an opening at an inner portion thereof, and the second connection electrode is positioned within the inner opening of the first connection electrode.
14. A light emitting diode according to claim 1, wherein an overlapping area of the second connection electrode with the second pad is more than 50% of an area of the second pad, and an overlapping area of the second pad with the first connection electrode is less than 50% of an area of the second pad.
15. A light emitting diode, comprising:
the epitaxial structure comprises a first conductive type semiconductor layer, a light emitting layer and a second conductive type semiconductor layer which are sequentially stacked from bottom to top;
the first insulating layer is arranged on the epitaxial structure and is also provided with a thimble opening which is positioned at the central position of the light-emitting diode, and a thimble metal block is arranged in the thimble opening.
16. The light-emitting diode according to claim 15, further comprising a second insulating layer, wherein the second insulating layer covers the thimble metal block.
17. A light emitting diode according to claim 15, wherein the first insulating layer has a first opening and a second opening;
a connection electrode including a first connection electrode and a second connection electrode,
the first connection electrode and the second connection electrode are disposed on the first insulating layer with a predetermined distance therebetween, the first connection electrode electrically connects the first conductive type semiconductor layer through the first opening, and the second connection electrode electrically connects the second conductive type semiconductor layer through the second opening;
and the bonding pad comprises a first bonding pad and a second bonding pad, the first bonding pad is electrically connected with the first connecting electrode, and the second bonding pad is electrically connected with the second connecting electrode.
18. A light emitting diode according to claim 17, wherein a reflective layer is formed on the second conductivity type semiconductor layer; the reflecting layer is a metal reflecting layer, a barrier layer is formed on the reflecting layer, and the barrier layer is made of metal materials.
19. The light-emitting diode of claim 18, wherein the first insulating layer covers a portion of the barrier layer, and the thimble metal block directly contacts the barrier layer.
20. A light-emitting device, characterized in that the light-emitting diode as claimed in any one of claims 1 to 19 is used.
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| CN114093996A (en) * | 2021-11-19 | 2022-02-25 | 淮安澳洋顺昌光电技术有限公司 | Semiconductor light emitting device |
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| KR101276053B1 (en) * | 2011-07-22 | 2013-06-17 | 삼성전자주식회사 | Semiconductor light emitting device and light emitting apparatus |
| JP2013175611A (en) * | 2012-02-27 | 2013-09-05 | Sanken Electric Co Ltd | Semiconductor light emitting device |
| TWI563684B (en) * | 2013-08-06 | 2016-12-21 | Genesis Photonics Inc | Light emitting diode structure |
| KR20160027875A (en) * | 2014-08-28 | 2016-03-10 | 서울바이오시스 주식회사 | Light emitting device |
| KR102323686B1 (en) * | 2014-10-21 | 2021-11-11 | 서울바이오시스 주식회사 | Light emitting device and method of fabricating the same |
| CN104779339B (en) * | 2015-01-15 | 2017-08-25 | 大连德豪光电科技有限公司 | Upside-down mounting high voltage LED chip and preparation method thereof |
| CN104681704B (en) * | 2015-01-30 | 2017-08-29 | 大连德豪光电科技有限公司 | Flip LED chips and preparation method thereof |
| US10340425B2 (en) * | 2016-11-25 | 2019-07-02 | Seoul Viosys Co., Ltd. | Light emitting diode having light blocking layer |
| CN111063780B (en) * | 2016-12-21 | 2024-04-02 | 首尔伟傲世有限公司 | High-reliability light-emitting diode |
| CN111525007B (en) * | 2017-02-17 | 2023-07-25 | 首尔伟傲世有限公司 | Light emitting diode with side reflecting layer |
| KR102390828B1 (en) * | 2017-08-14 | 2022-04-26 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | Semiconductor device |
| KR101997104B1 (en) * | 2018-02-21 | 2019-07-05 | 순천대학교 산학협력단 | Micro array lighting emitting diode and method for manufacturing the same |
| CN111446336B (en) * | 2020-04-01 | 2023-05-05 | 厦门三安光电有限公司 | Light emitting diode |
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