CN115565955A - 一种功率模组混合集成封装结构及封装方法 - Google Patents
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Abstract
本申请涉及一种功率模组混合集成封装结构及封装方法。所述封装结构包括:塑封外壳、金属芯基板、散热焊盘、电气焊盘、半导体IC、电路连线,其中金属芯基板包含带有开槽和凸台结构的基底、树脂绝缘层、叠层结构。所述封装方法包括:所述半导体IC通过焊接安装在所述金属芯基板的凸台和叠层结构上;所述散热焊盘通过热压融合在所述金属芯基板的基底上;所述电气焊盘粘结在所述金属芯基板的开槽结构中;所述电气焊盘、半导体IC管通过所述电路连线与所述叠层结构键合;所述塑封外壳通过注塑工艺与所述金属芯基板的树脂绝缘层连接,形成气密封装。本申请适用高冲载、高散热、高集成化封装的相关应用场景。
Description
技术领域
本申请涉及元器件封装结构及封装方法领域,特别涉及一种功率模组混合集成封装结构及其封装方法。
背景技术
混合集成电路以其高密度、高性能、高可靠性和轻重量、小体积等明显优势和在整机系统中所发挥的重要作用,广泛应用于陆、海、空、天四大领域,涵盖航天、航空、船艇等通讯、计算机等电子系统。国内功率集成电路现状已无法满足现代混合集成电路高功率、高可靠性、高密度、小型化、低成本、系统化的时代发展需求。
发明内容
本申请的目的在于提供一种功率模组混合集成封装结构及其封装方法,能够实现高导热、高可靠性能目标,适用于高冲载、高稳定性、高散热的工作环境。
具体的,本申请提供一种功率模组混合集成封装结构,包括:金属芯基板;散热焊盘、电气焊盘、半导体IC、电路连线、塑封外壳。
所述金属芯基板包括带有开槽和凸台结构的基底、树脂绝缘层和叠层结构;所述叠层结构包括电气层、绝缘层和通孔结构;
所述半导体IC包括功率IC和非功率IC,所述功率IC包括正面封装功率IC和垂直封装功率IC,其中所述正面封装功率IC的电极在有源面上,所述垂直封装功率IC的大电流电极在背面,小电流电极在正面;
所述散热焊盘设置在所述金属芯基板基底无凸台结构一侧;所述电气焊盘设置在所述金属芯基板的开槽结构中;所述正面封装功率IC设置在所述金属芯基板的凸台结构上;所述垂直封装功率IC设置在所述金属芯基板的叠层结构上;所述非功率IC通过倒装工艺设置在所述金属芯基板的叠层结构上;所述电气焊盘、半导体IC通过所述电路连线与所述叠层结构键合;所述半导体IC通过所述电路连线与所述通孔结构建内部电气回路,通过所述电路连线与所述电气焊盘形成外部电气回路;所述塑封外壳与所述金属芯基板的树脂绝缘层连接,形成密闭结构。
可选地,在对模组封装之前,首先进行所述高导热高可靠性金属芯基板结构的设计,包括:
步骤1:所述金属芯基板基底开槽结构和凸台结构设计;
步骤2:所述散热焊盘设置在所述金属芯基板基底无凸台一侧;
步骤3:所述树脂绝缘层包裹所述金属芯基板基底;
步骤4:所述电气焊盘设置在所述金属芯基板的开槽结构中;
步骤5:对所述散热焊盘、电气焊盘裸露在空气的表面进行表面处理;
步骤6:所述叠层结构设置在所述金属芯基板的树脂绝缘层上。
进一步地,步骤1包括:所述开槽结构设置在所述金属芯基板基底的四周,开槽设置多个,且对侧多个开槽结构等距离等大小设置。
进一步地,步骤1包括:所述凸台结构设置在所述金属芯基板基底的上表面,通过切削或者压模工艺形成,凸台结构呈长方体结构,凸台结构设置多个。
进一步地,步骤2将所述散热焊盘与所述金属芯基板基底无凸台结构的一侧进行热压融合,包括:
对所述散热焊盘的一面进行研磨,得到第一面金属镜;
对所述金属芯基板的基底无凸台结构一侧进行研磨,得到第二面金属镜;
将所述第一面金属镜和所述第二面金属镜进行热压融合,结合在一起。
进一步地,步骤3包括:所述树脂绝缘层包裹所述热压融合的整体,裸露出凸台结构和散热焊盘表面。
进一步地,步骤4包括:使用绝缘粘合剂将所述电气焊盘粘结在所述金属芯基板的开槽结构中,并且所述电气焊盘与所述树脂绝缘层表面水平。
进一步地,步骤5包括:对所述散热焊盘、电气焊盘裸露在空气表面进行表面镀锡处理,防止所述焊盘氧化。
进一步地,步骤6所述叠层结构包括电气层和绝缘层,其中电气层包括信号层、电源层和接地层,具体实施方案包括:
所述叠层结构采用“第一电气层—第一绝缘层—第二电气层—第二绝缘层—第三电气层—第三绝缘层—第四电气层”顺序,各部分电气层之间由于绝缘层的存在形成屏蔽效应,各电气层之间通过通孔结构连接电气回路。所述绝缘层横截面积相同,所述电气层横截面积小于所述绝缘层,所述绝缘层包裹住相邻的所述电气层,从而达到与外界绝缘效果。
进一步地,步骤6包括:所述绝缘层设有通孔结构,以连接所述电气层各部分;所述绝缘层和所述电气层的开口设置多个,其中开口位置大小和所述金属芯基板的凸台结构和所述半导体IC大小、安置位置相关。
具体地,所述散热焊盘材料为铜或者锡;所述叠层结构中的电气层材料为铜。
较好地,所述金属芯基板基底材料为铜金刚石等新型陶瓷颗粒增强金属基复合材料,该复合材料具有较高的热导率的同时,还具有较好的可靠性以及优良的热膨胀系数;所述叠层结构中的绝缘层材料为氮化铝等陶瓷粉末增强环氧树脂材料,该材料具有较好的热导系数和较好的绝缘性能。
进一步的,本申请还提供了一种上述功率模组混合集成封装结构的封装方法,包括以下步骤:
步骤a:所述非功率IC通过倒装结构设置在所述金属芯基板叠层结构上;
步骤b:所述正面封装功率IC通过所述叠层结构的开口设置在所述金属芯基板的凸台结构上;
步骤c:所述垂直封装功率IC通过所述叠层结构的开口设置在所述金属芯基板的叠层结构上;
步骤d:所述半导体IC通过所述电路连线与所述金属芯基板叠层结构键合,并且与所述通孔结构一起构成内部电气回路;所述电气焊盘通过所述电路连线与所述金属芯基板叠层结构连接构成外部电气回路;
步骤f:所述塑封外壳设置在所述金属芯基板的树脂绝缘层上,形成密闭封装。
进一步地,步骤a包括:在所述非功率IC的有源面上制备导电互连结构,通过焊接工艺使所述导电互连结构与所述叠层结构的第四电气层建立电连接。
进一步地,步骤b包括:所述正面封装功率IC的无源面通过所述绝缘层、电气层的开口焊接在所述金属芯基板的凸台结构上,使所述功率IC产生的高热量直接通过高导热基底材料散发,同时消减了传热距离,提高散热性能。
进一步地,步骤c包括:所述垂直封装功率IC的背面大电流电极通过所述绝缘层、电气层的开口焊接在所述叠层结构的第一电气层上,缩短电连接路径,消减了传热距离,提高散热性能。
进一步地,步骤d包括:所述正面封装功率IC通过铝带键合工艺与所述第四电气层建立电连接,增大传热面积提高散热性能;所述垂直封装功率IC、所述电气焊盘通过铝丝键合工艺与所述第四电气层建立电连接。
较好地,步骤f中,所述塑封外壳采用陶瓷粉末(氮化铝)增强环氧树脂材料,提供较好绝缘性能的同时提供较高的热导率,提高散热性能。
本申请的有益效果为:本申请通过在金属芯基板的基底上设置开槽结构,粘合外部电气焊盘,既增强了散热焊盘的机械可靠性,同时又消除电子封装的外部引脚,降低封装高度,有利于封装的集成化发展;正面封装功率IC直接与金属芯基板基底的凸台结构相连,减少热量的传播路径,同时基底采用具有高热导系数铜金刚石等陶瓷颗粒增强金属基复合材料,塑封外壳和绝缘层采用了陶瓷粉末增强环氧树脂的复合材料,提高了散热性能;叠层结构的开口结构使元器件嵌入到基板内部,这种嵌入式封装+叠层结构极大的优化了传热路径,同时降低了电气回路的阻抗问题,有益于封装的集成化发展。
附图说明
通过阅读下文优选实施方式的详细描述,各种其他的优点和益处对于本领域普通技术人员将变得清楚明了。附图仅用于示出优选实施方式的目的,而并不认为是对本申请的限制。而且在整个附图中,用相同的参考符号表示相同的部件。在附图中:
图1为本申请的立体外观图;
图2为本申请的剖面结构图;
图3为本申请的金属芯基板基底的结构图;
图4为本申请的树脂绝缘层包裹金属芯基体的结构图;
图5为本申请的金属芯基板的叠层结构图;
图6为本申请的金属芯基板的总体结构图;
图7为本申请的封装结构的示意图;
图8为本申请的封装方法流程图;
其中,1为基底;2为开槽结构;3为凸台结构;4为散热焊盘;5为树脂绝缘层;6为电气焊盘;7为第一电气层;8为第一绝缘层;9为第二电气层;10为第二绝缘层;11为第三电气层;12为第三绝缘层;13为第四电气层;14为通孔结构;15为非功率IC;16为导电柱;17为焊球;18为填充层;19为正面封装功率IC;20为铝带;21为焊层;22为垂直封装功率IC;23为铝丝;24为塑封外壳。
具体实施方式
下面将参照附图更详细地描述本公开的示例性实施方式。虽然附图中显示了本公开的示例性实施方式,然而应当理解,可以以各种形式实现本公开而不应被这里阐述的实施方式所限制。相反,提供这些实施方式是为了能够更透彻地理解本公开,并且能够将本公开的范围完整的传达给本领域的技术人员。
在本申请的描述中,需要说明的是,术语“上”、“下”、“内”、“外”“顶面”、“底面”、“两侧”、“一侧”、“另一侧”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本申请和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本申请的限制。此外,术语“第一”、“第二”仅用于描述目的,而不能理解为指示或暗示相对重要性。
在本申请的描述中,需要说明的是,除非另有明确的规定和限定,术语“安装”、“设置有”、“连接”等,应做广义理解,例如“连接”,可以是固定连接,也可以是可拆卸连接,或一体地连接;可以是机械连接,也可以是电连接;可以是直接相连,也可以通过中间媒介间接相连,可以是两个元件内部的连通。对于本领域的普通技术人员而言,可以具体情况理解上述术语在本申请中的具体含义。
一种功率模组混合集成封装结构与封装方法,参考图1至图8,包括:基底1上制备开槽2和凸台结构3,基底1的无凸台结构一侧热压融合散热焊盘4,树脂绝缘层5包裹基底1,裸露出散热焊盘4底面和凸台结构3,电气焊盘6粘结在开槽2中,对散热焊盘4和电气焊盘6裸露在空气中的表面进行处理。按照“第一电气层7—第一绝缘层8—第二电气层9—第二绝缘层10—第三电气层11—第三绝缘层12—第四电气层13”的顺序制备叠层结构,叠层结构中各部分电气层通过通孔结构14进行电气连接,非功率IC 15通过导电柱16和焊球17倒装安置在第四电气层12上,随后用填充层18密封电连接部分,正面封装功率IC 19通过铝带20键合在第四电气层13上,正面封装功率IC 19通过焊层21安置在凸台结构3上,垂直封装功率IC 22背面大电流电极通过焊层21与第一电气层7进行电连接,垂直封装功率IC 22正面小电流电极通过铝丝23键合在第四电气层13上,电气焊盘6通过铝丝23键合在第四电气层13上,塑封外壳24与树脂绝缘层5的顶面连接,构建密闭封装。
本申请实施例公开了一种功率模组混合集成封装结构与封装方法,如图8所示,具体步骤为:
步骤S101:对所述基底1制备开槽2与凸台结构3;
步骤S201:所述散热焊盘4与所述基底1无凸台结构一侧热压融合;
步骤S301:所述树脂绝缘层5包裹所述金属芯基底1;
步骤S401:所述电气焊盘6粘结在所述开槽结构2中;
步骤S501:对所述散热焊盘4、电气焊盘6表面处理;
步骤S601:所述叠层结构的制备;
步骤S701:所述非功率IC 15的安置;
步骤S702:所述正面封装功率IC 19的安置;
步骤S703:所述垂直封装功率IC 22的安置;
步骤S801:所述半导体IC 15和19、22、电气焊盘6的电连接;
步骤S901:所述塑封外壳24的密封。
本实施例的步骤S101中对基底1制备开槽2和凸台结构3,具体为:对所述基底1进行切削、压铸工艺制备开槽2和凸台结构3,其中,所述开槽结构2设置在所述金属芯基板基底1的四周,开槽2设置多个,且对侧多个开槽结构2等距离等大小设置;所述凸台结构3设置在所述金属芯基板基底1的顶面,凸台结构3呈长方体结构,设置多个。
本实施例的步骤S201中所述散热焊盘4与所述基底1无凸台结构一侧热压融合,具体为:
对所述散热焊盘的一面进行研磨,得到第一面金属镜;
对所述金属芯基板的基底无凸台结构一面进行研磨,得到第二面金属镜;
将所述第一面金属镜和所述第二面金属镜进行热压融合,结合在一起。
本实施例的步骤S301所述树脂绝缘层5包裹所述金属芯基底1,具体为:所述树脂绝缘层5通过注塑、点胶等工艺制备并包裹所述基底1,对整体研磨裸露出凸台结构3和散热焊盘4底面。
本实施例的步骤S401所述电气焊盘6粘结在所述开槽结构2中,具体为:通过绝缘粘合剂使所述电气焊盘6固定在所述开槽结构2中,并且通过设计所述电气焊盘6尺寸和对所述树脂绝缘层5表面研磨手段使两者表面水平。
本实施例的步骤S501对所述散热焊盘4、电气焊盘6表面处理,具体为:对所述散热焊盘4、电气焊盘6裸露在空气表面进行表面镀锡处理,防止所述焊盘氧化。
本实施例的步骤S601所述叠层结构的制备,具体为:所述叠层结构采用“第一电气层7—第一绝缘层8—第二电气层9—第二绝缘层10—第三电气层11—第三绝缘层12—第四电气层13”,各部分电气层之间由于绝缘层的存在形成屏蔽效应,各部分电气层之间通过通孔结构14连接电气回路。所述绝缘层横截面积相同,所述绝缘层横截面积小于所述树脂绝缘层5,所述电气层横截面积小于所述绝缘层,所述绝缘层包裹住相邻的所述电气层,从而达到与外界绝缘效果。所述叠层结构在所述凸台结构3的附近位置开口a,以便后续封装。其中:
所述第一电气层7通过沉积、电镀等工艺在所述树脂绝缘层5上形成图案化线路;
所述第一绝缘层8通过注塑、点胶等工艺包裹住所述第一信号层7,其中,第一绝缘层8的底面与第一电气层7的下底面齐平,第一绝缘层8的厚度高于第一电气层7,从而达到绝缘效果;
所述第二电气层9采用大面积镀铜工艺在所述第一绝缘层8上制备,所述第二绝缘层10通过注塑、点胶等工艺包裹所述第二电气层9,其中,第二绝缘层10的底面与第二电气层9的下底面齐平,第二绝缘层10的厚度高于第二电气层9,从而达到绝缘效果;
所述第三电气层11和第三绝缘层12的制备过程与上述类似;
所述第四电气层13通过沉积、电镀等工艺在所述第三绝缘层12上形成图案化线路;
本实施例的步骤S701所述非功率IC 15的安置,具体为:在所述非功率IC 15的有源面上制备导电互连结构,其中通过电镀工艺在所述非功率IC 15的有源面上制备所述导电柱16,通过回流焊等工艺将所述焊球17熔化后连接所述导电柱16和所述第四电气层13。
本实施例的步骤S701所述非功率IC 15的安置,所述方法还包括:对所述导电互联结构进行底部填充,形成所述填充层18。
本实施例的步骤S702所述正面封装功率IC 19的安置,具体为:在所述凸台结构3上制备所述焊层21,所述正面封装功率IC 19的无源面通过所述电气层、绝缘层的开口结构a焊接在所述凸台结构3上。
本实施例的步骤S703所述垂直封装功率IC 22的安置,具体为:在所述第一电气层11上制备所述焊层21,所述垂直封装的功率IC 22的背面大电流电极通过所述叠层结构的电气层、绝缘层的开口结构b焊接在所述第一电气层上。
本实施例的步骤S801所述半导体IC 15和19、22、电气焊盘6的电连接,具体为:所述正面封装功率IC 19通过所述铝带20键合工艺与所述第四电气层13建立电连接;所述垂直封装功率IC 22、所述电气焊盘6通过所述铝丝23键合工艺与所述第四电气层13建立电连接。其中:所述半导体IC 15、19、22通过所述通孔结构14和所述电路连线铝带20、铝丝23构建内部电气回路,通过所述铝丝23与所述电气焊盘6构建外部电气回路。
本实施例的步骤S901所述塑封外壳24的密封,具体为:所述塑封外壳24通过注塑、点胶等工艺,包裹所述叠层结构,并且与所述树脂绝缘层5连接。其中所述塑封外壳24的侧面与所述树脂绝缘层5的侧面平齐,所述塑封外壳24的底面与所述树脂绝缘层5的顶面平齐,所述塑封外壳24的厚度高于所述叠层结构,从而达到绝缘、密闭封装效果。
以上所述,仅为本申请较佳的具体实施方式,但本申请的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本申请揭露的技术范围内,可轻易想到的变化或替换,都应涵盖在本申请的保护范围之内。因此,本申请的保护范围应以所述权利要求的保护范围为准。
Claims (10)
1.一种功率模组混合集成封装结构,其特征在于,包括:金属芯基板、散热焊盘、电气焊盘、半导体IC、电路连线、塑封外壳;
所述金属芯基板包括带有开槽和凸台结构的基底、树脂绝缘层和叠层结构;所述叠层结构包括电气层、绝缘层和通孔结构;
所述半导体IC包括功率IC和非功率IC,所述功率IC包括正面封装功率IC和垂直封装功率IC,其中所述正面封装功率IC的电极在有源面上,所述垂直封装功率IC的大电流电极在背面,小电流电极在正面;
所述散热焊盘设置在所述金属芯基板的基底无凸台结构一侧;所述电气焊盘设置在所述金属芯基板的开槽结构中;所述正面封装功率IC设置在所述金属芯基板的凸台结构上;所述垂直封装功率IC设置在所述金属芯基板的叠层结构上;所述非功率IC通过倒装工艺设置在所述金属芯基板的叠层结构上;所述电气焊盘、半导体IC通过所述电路连线与所述叠层结构键合;所述半导体IC通过所述电路连线与所述通孔结构建内部电气回路,通过所述电路连线与所述电气焊盘形成外部电气回路;所述塑封外壳与所述金属芯基板的树脂绝缘层连接,形成密闭结构。
2.根据权利要求1所述一种功率模组混合集成封装结构,其特征在于:一种高导热高可靠性金属芯基板的结构设计,包括以下步骤:
第一步:所述金属芯基板基底开槽结构和凸台结构设计;
第二步:所述散热焊盘与所述金属芯基板的基底无凸台结构的一侧进行热压融合;
第三步:所述树脂绝缘层包裹所述金属芯基底,裸露出凸台结构和散热焊盘表面;
第四步:所述电气焊盘设置在所述树脂绝缘层包裹金属芯基底的开槽结构中;
第五步:对所述散热焊盘和所述电气焊盘裸露在空气表面的部分进行表面处理;
第六步:所述叠层结构设置在所述金属芯基板的树脂绝缘层上,所述叠层结构包括电气层、绝缘层和通孔结构。
3.根据权利要求1或2所述一种功率模组混合集成封装结构,其特征在于:
所述开槽结构设置在所述金属芯基板基底的四周,开槽设置多个,且对侧多个开槽结构等距离等大小设置。
4.根据权利要求1或2所述一种功率模组混合集成封装结构,其特征在于:
所述凸台结构设置在所述金属芯基板基底的上表面,通过切削或者压模工艺形成,凸台结构呈长方体结构,凸台结构设置多个。
5.根据权利要求2所述一种功率模组混合集成封装结构,其特征在于:
所述叠层结构自下而上依次设置第一电气层、第一绝缘层、第二电气层、第二绝缘层、第三电气层、第三绝缘层、第四电气层,各电气层之间通过通孔结构连接内部电气回路;所述绝缘层横截面积相同且小于树脂绝缘层面积,所述电气层横截面积小于所述绝缘层,所述绝缘层包裹住相邻的所述电气层。
6.根据权利要求5所述一种功率模组混合集成封装结构,其特征在于:
所述绝缘层设有通孔结构,以连接所述电气层各部分;所述绝缘层和所述电气层设置多个开口结构,其中开口的位置大小和所述金属芯基板的凸台结构和所述半导体IC大小、安装位置相关。
7.根据权利要求1或2所述一种功率模组混合集成封装结构,其特征在于:
所述金属芯基板的基底材料为铜金刚石等新型陶瓷颗粒增强金属基复合材料;所述散热焊盘材料为铜或者锡;所述叠层结构中的电气层材料为铜;所述叠层结构中的绝缘层材料为陶瓷粉末增强环氧树脂材料。
8.一种根据权利要求1-7任一项所述的功率模组混合集成封装结构的封装方法,其特征在于,包括以下步骤:
第一步:非功率IC通过倒装结构设置在所述金属芯基板叠层结构上;
第二步:所述正面封装功率IC通过所述绝缘层、电气层的开口设置在所述金属芯基板的凸台结构上;
第三步:所述垂直封装功率IC通过所述绝缘层、电气层的开口设置在所述金属芯基板的叠层结构上;
第四步:所述半导体IC通过所述电路连线与所述金属芯基板的叠层结构键合,并且与所述通孔结构一起构成内部电气回路;所述电气焊盘通过所述电路连线与所述金属芯基板的叠层结构连接构成外部电气回路;
第五步:所述塑封外壳设置在所述金属芯基板的树脂绝缘层上,形成密闭封装。
9.根据权利要求8所述的封装方法,其特征在于:在所述非功率IC的有源面上制备导电互连结构,通过焊接工艺使所述非功率IC与所述金属芯基板的第四电气层建立电连接;所述正面封装功率IC无源面通过焊接工艺固定在所述金属芯基板的凸台结构上;所述垂直封装功率IC的背面大电流电极通过焊接工艺与所述金属芯基板的第一电气层建立电连接。
10.根据权利要求8所述的封装方法,其特征在于:所述正面封装功率IC有源面上的电极通过铝带键合工艺与所述第四电气层建立电连接;所述垂直封装功率IC的正面小电流电极、所述电气焊盘通过铝丝键合工艺与所述第四电气层建立电连接。
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