CN115516631A - 金属网格的制备方法、薄膜传感器及其制备方法 - Google Patents
金属网格的制备方法、薄膜传感器及其制备方法 Download PDFInfo
- Publication number
- CN115516631A CN115516631A CN202180000869.4A CN202180000869A CN115516631A CN 115516631 A CN115516631 A CN 115516631A CN 202180000869 A CN202180000869 A CN 202180000869A CN 115516631 A CN115516631 A CN 115516631A
- Authority
- CN
- China
- Prior art keywords
- dielectric layer
- layer
- metal
- dielectric
- metal grid
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 93
- 239000002184 metal Substances 0.000 title claims abstract description 93
- 239000010409 thin film Substances 0.000 title claims abstract description 37
- 238000002360 preparation method Methods 0.000 title abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 79
- 238000000034 method Methods 0.000 claims abstract description 64
- 239000007769 metal material Substances 0.000 claims abstract description 28
- 238000000059 patterning Methods 0.000 claims abstract description 14
- 239000000203 mixture Substances 0.000 claims abstract description 10
- 239000010408 film Substances 0.000 claims description 53
- 239000003989 dielectric material Substances 0.000 claims description 31
- 239000000463 material Substances 0.000 claims description 29
- 238000004519 manufacturing process Methods 0.000 claims description 22
- 238000005530 etching Methods 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 12
- 229910010272 inorganic material Inorganic materials 0.000 claims description 8
- 239000011147 inorganic material Substances 0.000 claims description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 8
- 238000009713 electroplating Methods 0.000 claims description 7
- 239000011368 organic material Substances 0.000 claims description 7
- 238000011161 development Methods 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 179
- 229910052581 Si3N4 Inorganic materials 0.000 description 11
- 239000010949 copper Substances 0.000 description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical class O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 229910052802 copper Inorganic materials 0.000 description 10
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- 238000002834 transmittance Methods 0.000 description 7
- 239000004642 Polyimide Substances 0.000 description 6
- 229920001721 polyimide Polymers 0.000 description 6
- 239000002131 composite material Substances 0.000 description 5
- 239000006185 dispersion Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 4
- -1 polyethylene terephthalate Polymers 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- 239000013067 intermediate product Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000004952 Polyamide Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920000058 polyacrylate Polymers 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/1271—Supports; Mounting means for mounting on windscreens
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
- H01Q9/04—Resonant antennas
- H01Q9/0407—Substantially flat resonant element parallel to ground plane, e.g. patch antenna
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Micromachines (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
本公开提供一种金属网格的制备方法、薄膜传感器及其制备方法，属于电子器件技术领域。本公开的金属网格的制备方法，其包括：提供一衬底基板；通过构图工艺，在所述衬底基板上形成包括第一外延结构的图形；其中，所述第一外延结构具有网格状的第一槽部；在所述第一外延结构背离所述衬底基板的一侧，覆盖第一介质层，以形成网格状的第二槽部；通过构图工艺，在所述第一介质层背离一侧形成位于所述第二槽部的金属材料，以形成金属网格。
Description
PCT国内申请，说明书已公开。
Claims (16)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2021/089138 WO2022222123A1 (zh) | 2021-04-23 | 2021-04-23 | 金属网格的制备方法、薄膜传感器及其制备方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115516631A true CN115516631A (zh) | 2022-12-23 |
Family
ID=83723370
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202180000869.4A Pending CN115516631A (zh) | 2021-04-23 | 2021-04-23 | 金属网格的制备方法、薄膜传感器及其制备方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20240047863A1 (zh) |
| CN (1) | CN115516631A (zh) |
| WO (1) | WO2022222123A1 (zh) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103413593B (zh) * | 2013-03-30 | 2014-09-17 | 深圳欧菲光科技股份有限公司 | 透明导电体及其制备方法 |
| US9859323B1 (en) * | 2016-06-13 | 2018-01-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Complementary metal-oxide-semiconductor (CMOS) image sensor |
| CN107946327B (zh) * | 2017-10-13 | 2020-02-14 | 上海集成电路研发中心有限公司 | 一种背照式cmos图像传感器结构的制作方法 |
| CN108598101A (zh) * | 2018-06-29 | 2018-09-28 | 德淮半导体有限公司 | 制造背照式图像传感器的方法 |
| CN111697017B (zh) * | 2020-04-08 | 2024-01-26 | 济源大地通信科技有限公司 | 一种图像传感器及其制备方法 |
-
2021
- 2021-04-23 WO PCT/CN2021/089138 patent/WO2022222123A1/zh active Application Filing
- 2021-04-23 CN CN202180000869.4A patent/CN115516631A/zh active Pending
- 2021-04-23 US US17/640,846 patent/US20240047863A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US20240047863A1 (en) | 2024-02-08 |
| WO2022222123A1 (zh) | 2022-10-27 |
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