CN115485820A - Method for producing cured resin sheet with electrode, and thermosetting resin sheet - Google Patents
Method for producing cured resin sheet with electrode, and thermosetting resin sheet Download PDFInfo
- Publication number
- CN115485820A CN115485820A CN202280004005.4A CN202280004005A CN115485820A CN 115485820 A CN115485820 A CN 115485820A CN 202280004005 A CN202280004005 A CN 202280004005A CN 115485820 A CN115485820 A CN 115485820A
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- CN
- China
- Prior art keywords
- resin sheet
- thermosetting resin
- cured resin
- electrode
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 229920005989 resin Polymers 0.000 title claims abstract description 236
- 239000011347 resin Substances 0.000 title claims abstract description 236
- 229920001187 thermosetting polymer Polymers 0.000 title claims abstract description 142
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- 239000000463 material Substances 0.000 claims abstract description 18
- 238000000227 grinding Methods 0.000 claims abstract description 12
- 238000003860 storage Methods 0.000 claims abstract description 12
- 238000010438 heat treatment Methods 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 15
- 238000010521 absorption reaction Methods 0.000 claims description 7
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- 239000000203 mixture Substances 0.000 description 35
- 238000001723 curing Methods 0.000 description 25
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- 239000010954 inorganic particle Substances 0.000 description 12
- 238000007789 sealing Methods 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 239000005011 phenolic resin Substances 0.000 description 11
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 10
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- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 9
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- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 5
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- RAXXELZNTBOGNW-UHFFFAOYSA-O Imidazolium Chemical compound C1=C[NH+]=CN1 RAXXELZNTBOGNW-UHFFFAOYSA-O 0.000 description 2
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- 229910052581 Si3N4 Inorganic materials 0.000 description 2
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- 125000000217 alkyl group Chemical group 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical class C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
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- 238000010586 diagram Methods 0.000 description 2
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- 238000009826 distribution Methods 0.000 description 2
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- RUEBPOOTFCZRBC-UHFFFAOYSA-N (5-methyl-2-phenyl-1h-imidazol-4-yl)methanol Chemical compound OCC1=C(C)NC(C=2C=CC=CC=2)=N1 RUEBPOOTFCZRBC-UHFFFAOYSA-N 0.000 description 1
- FFYRIXSGFSWFAQ-UHFFFAOYSA-N 1-dodecylpyridin-1-ium Chemical compound CCCCCCCCCCCC[N+]1=CC=CC=C1 FFYRIXSGFSWFAQ-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/275—Manufacturing methods by chemical or physical modification of a pre-existing or pre-deposited material
- H01L2224/27515—Curing and solidification, e.g. of a photosensitive layer material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/276—Manufacturing methods by patterning a pre-deposited material
- H01L2224/27602—Mechanical treatment, e.g. polishing, grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Laminated Bodies (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The method for producing a cured resin sheet with an electrode of the present invention comprises: disposing a plurality of electrodes (20) for electronic components on a temporary fixing surface (11) of a temporary fixing base material (10); a step of bonding the 1 st surface (31) of the thermosetting resin sheet (30) to the 1 st surface (11) of the temporary fixing base (10) while embedding the plurality of electrodes (20) with the same sheet; a step of forming a cured resin sheet (30A) by thermally curing the resin sheet (30); a step of separating the temporary fixing base material (10) from the cured resin sheet (30A); and grinding the 2 nd surface (32) side of the cured resin sheet (30A) to expose the electrodes (20) on the 2 nd surface (32) side. The resin sheet (X) of the present invention is a thermosetting resin sheet for producing a cured resin sheet with an electrode, and after curing, has a tensile storage modulus of 2GPa or more and 18GPa or less at 25 ℃.
Description
Technical Field
The present invention relates to a method for producing a cured resin sheet with an electrode, and a thermosetting resin sheet.
Background
In the manufacturing process of an electronic component package such as a semiconductor package, after an electronic component is mounted on a base material such as a mounting substrate, a cured resin portion is formed to cover the electronic component, and the electronic component is sealed. When the electronic component is mounted face-up with respect to the substrate, the terminal of the electronic component on the side opposite to the substrate (the upper surface side of the electronic component) and the terminal of the substrate are electrically connected via a bonding wire. When an electronic component is mounted face down on a substrate, conventionally, terminals of the electronic component on the substrate side and terminals of the substrate are electrically connected via bumps or the like. A technique related to the manufacture of an electronic component package is described in patent document 1 below, for example.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open No. 2001-189415
Disclosure of Invention
Problems to be solved by the invention
In the case of the above-described face-up mounting, the cured resin portion of the electronic component is formed in a thickness to such an extent that the bonding wire extending from the upper surface side of the electronic component is embedded in the cured resin portion together with the electronic component. In the case of the above-described face-down mounting, the cured resin portion is formed to have a thickness to such an extent that the electronic component at a height mounted on the substrate via the electrode is embedded in the cured resin portion. Therefore, it has been impossible to manufacture a sufficiently thin electronic component package suitable for the application.
The invention provides a method for producing a cured resin sheet with an electrode suitable for producing a thin electronic component package, a cured resin sheet with an electrode, and a thermosetting resin sheet used for producing the sheet.
Means for solving the problems
The present invention [1] includes a method for manufacturing a mounting substrate with an electrode, comprising: a first step of disposing a plurality of electrodes for electronic components on a temporary fixing surface of a temporary fixing base having the temporary fixing surface; a 2 nd step of bonding the 1 st surface of a thermosetting resin sheet having a 1 st surface and a 2 nd surface opposite to the 1 st surface to the temporary fixing surface of the temporary fixing base while embedding the plurality of electrodes for electronic components with the thermosetting resin sheet; a 3 rd step of forming a cured resin sheet by thermally curing the thermosetting resin sheet; a 4 th step of separating the temporary fixing base material from the cured resin sheet; and a 5 th step of grinding the 2 nd surface side of the cured resin sheet to expose the electrodes for electronic components on the 2 nd surface side.
According to the method, a cured resin sheet with an electrode can be produced. The sheet includes a sheet-like cured resin portion and a plurality of electrodes for electronic components held by the cured resin portion. Each of the plurality of electrodes has a 1 st electrode surface exposed on one surface in a thickness direction of the sheet and a 2 nd electrode surface exposed on the other surface. The plurality of electrodes are provided at positions corresponding to the type and number of electronic components to be mounted. Such a cured resin sheet with electrodes is suitable for manufacturing a thin electronic component package as described below.
First, an electronic component is mounted face down on one surface of the cured resin sheet with electrodes. In this face-down mounting, the electrodes of the same sheet and the terminals on the surface of the electronic component are bonded one to one in a state where the surface of the cured resin sheet with electrodes is in contact with the surface of the electronic component. Then, the sealing resin composition in a semi-cured state is supplied onto the cured resin sheet with electrodes so as to cover the electronic component. Then, the sealing resin composition for covering the electronic component is cured by heating. Thereby, a cured resin portion is formed around the electronic component on the cured resin sheet with the electrode. Thereafter, the electronic component package is singulated as needed. In the electronic component package thus obtained, the electronic component is sealed by the cured resin portion of the sheet and the cured resin portion formed of the sealing resin composition in a state in which the electronic component can be externally connected via the electrode of the cured resin sheet with an electrode. Since such an electronic component package is mounted face down on a substrate in a state where the electronic component is in contact with the substrate, it is more suitable for thinning than conventional face up type electronic component packages and face down type electronic component packages. That is, the cured resin sheet with an electrode obtained by the production method of the present invention is suitable for producing a thin electronic component package.
The invention [2] comprises the method for producing a cured resin sheet with an electrode according to [1], wherein the thermosetting resin sheet has a tensile storage modulus of 2GPa or more and 18GPa or less at 25 ℃ after curing.
This configuration is suitable for separating the temporary fixing base material from the cured resin sheet while suppressing the occurrence of plastic deformation and cracks in the cured resin sheet in the above-described step 4.
The present invention [3] includes a cured resin sheet with an electrode, which comprises: a cured resin sheet having a 1 st surface and a 2 nd surface opposite to the 1 st surface; and a plurality of electronic component electrodes disposed in the cured resin sheet, each of the plurality of electronic component electrodes having a 1 st electrode surface exposed on the 1 st surface side and a 2 nd electrode surface exposed on the 2 nd surface side.
The cured resin sheet with an electrode having such a structure can be produced by the above-described production method, and is suitable for producing a thin electronic component package.
The invention [4] comprises a thermosetting resin sheet for producing a cured resin sheet with an electrode, which, after curing, has a tensile storage modulus of 2GPa or more and 18GPa or less at 25 ℃.
Such a thermosetting resin sheet is suitable for separating the temporarily fixed base material from the cured resin sheet while suppressing the occurrence of plastic deformation and cracks in the cured resin sheet in the step 4 of the method for producing a cured resin sheet with an electrode as described above. Therefore, the thermosetting resin sheet is suitable for use in the production of an electrode-carrying cured resin sheet suitable for the production of a thin electronic component package.
The invention [5] comprises the thermosetting resin sheet according to [4], which has a viscosity of 3kPa · s or more and 100kPa · s or less at 90 ℃.
This configuration is suitable for embedding the electrode with the same sheet while suppressing formation of voids between the thermosetting resin sheet and the electrode under a temperature condition of 90 ℃ or thereabouts in the step 2 of the method for producing a cured resin sheet with an electrode as described above.
The invention [6] comprises the thermosetting resin sheet according to [4] or [5], which has a mass W1 after 1 st standing for 1 hour under conditions of 150 ℃ and 1 hour of heat treatment and 25 ℃ and 40% of relative humidity thereafter, and a mass W2 after 2 nd standing for 168 hours under conditions of 85 ℃ and 85% of relative humidity after the 1 st standing, and has a moisture absorption rate represented by [ (W2-W1)/W1 ] x 100 of 0.3 mass% or less.
Such a configuration is preferable for ensuring the sealing reliability of the cured resin portion formed of the thermosetting resin sheet.
The invention [7] comprises the thermosetting resin sheet according to any one of [4] to [6], which has a relative dielectric constant of 4.2 or less at 10 GHz.
Such a constitution is preferable for reducing transmission loss of a high-frequency signal passing through the cured resin portion formed of the thermosetting resin sheet.
Drawings
Fig. 1 is a process diagram of one embodiment of a method for producing a cured resin sheet with electrodes according to the present invention. Fig. 1A shows an electrode arrangement step, fig. 1B shows a bonding step, fig. 1C shows a curing step, fig. 1D shows a peeling step, and fig. 1E shows a grinding step.
Fig. 2 is a schematic cross-sectional view of one embodiment of the thermosetting resin sheet of the present invention.
Fig. 3 shows an example of a method of using the cured resin sheet with electrodes. Fig. 3A shows a step of mounting an electronic component on a cured resin sheet with electrodes, fig. 3B shows a step of supplying a thermosetting composition for sealing the electronic component, and fig. 3C shows a step of curing the thermosetting composition.
Detailed Description
Fig. 1A to 1E are process diagrams of one embodiment of the method for producing a cured resin sheet with an electrode according to the present invention. The manufacturing method includes an electrode arrangement step (fig. 1A) as a 1 st step, a bonding step (fig. 1B) as a 2 nd step, a curing step (fig. 1C) as a 3 rd step, a peeling step (fig. 1D) as a 4 th step, and a grinding step (fig. 1E) as a 5 th step. Specifically, the following is shown.
First, in the electrode disposing step, as shown in fig. 1A, the electrodes 20 are disposed on the temporary fixing base 10. The temporary fixing substrate 10 includes a temporary fixing surface 11 having an adhesive force on one side in the thickness direction T.
In this step, specifically, a plurality of electrodes 20 for electronic components (electrodes for electronic components) are disposed on the temporary fixing surface 11 of the temporary fixing base 10.
The temporary fixing substrate 10 includes, for example, a support substrate and an adhesive layer disposed on the support substrate to form a temporary fixing surface 11. Examples of the support substrate include a resin substrate and a metal substrate. Examples of the resin substrate include a plastic film having flexibility. Examples of the plastic film include a polyethylene terephthalate film, a polyethylene film, a polypropylene film, and a polyester film. Examples of the material of the metal substrate include stainless steel, aluminum, and nickel. The adhesive layer is formed of a pressure sensitive adhesive. The adhesive layer may be an adhesive layer whose adhesive force can be lowered later. Examples of such an adhesive layer include an adhesive layer that can be cured by ultraviolet irradiation to reduce the adhesive strength.
The electrode 20 is an electrode of an electronic component such as a semiconductor chip. The electrode 20 has a 1 st portion 21 and a 2 nd portion 22 in this embodiment. In the plane direction orthogonal to the thickness direction T, the 1 st portion 21 is relatively thin and the 2 nd portion 22 is relatively thick. The 1 st portion 21 and the 2 nd portion 22 may be circular or rectangular in plan view, such as square. The width (maximum length in the plane direction) of the 1 st portion 21 is, for example, 20 to 100 μm. The width (maximum length in the plane direction) of the 2 nd portion 22 may be larger than the width of the 1 st portion 21, and is, for example, 40 to 300 μm. In the present embodiment, the 1 st portion 21 side of the electrode 20 is temporarily fixed to the temporary fixing surface 11. The height (length in the thickness direction T) of the electrode 20 disposed on the temporary fixing surface 11 is, for example, 20 to 100 μm. The plurality of electrodes 20 are arranged on the temporary fixing surface 11 with a space therebetween in the planar direction. The interval between the adjacent electrodes 20 is, for example, 100 to 500 μm. The cured resin sheet X with electrodes (shown in fig. 1E) produced by the present production method is provided with a plurality of electrodes 20 at positions corresponding to the type and number of electronic components to be mounted. Examples of the material of the electrode 20 include copper, silver, nickel, and gold.
Then, in the bonding step, as shown in fig. 1B, the thermosetting resin sheet 30 is bonded to the temporary fixing base 10. As shown in fig. 2, the thermosetting resin sheet 30 used in this step has a 1 st surface 31 and a 2 nd surface 32 opposite to the 1 st surface 31, and extends in a direction orthogonal to the thickness direction T. The thermosetting resin sheet 30 contains a thermosetting resin and an inorganic filler, as described later. The thermosetting resin sheet 30 is in a semi-cured state (B-stage state).
In this step, specifically, the plurality of electrodes 20 on the temporary securing surface 11 of the temporary securing base 10 are embedded with the thermosetting resin sheet 30, and the 1 st surface 31 of the thermosetting resin sheet 30 is bonded to the temporary securing surface 11. In the bonding, a vacuum press may be used. Preferably, the thermosetting resin sheet 30 is softened by heating before bonding. The heating temperature (softening temperature) in this step is, for example, 40 ℃ or higher, preferably 60 ℃ or higher. The heating temperature is less than the curing temperature of the thermosetting resin sheet 30, for example, less than 100 ℃, and preferably 90 ℃ or less.
Then, in the curing step, as shown in fig. 1C, the thermosetting resin sheet 30 is thermally cured to form a cured resin sheet 30A. The heating temperature (curing temperature) is higher than the softening temperature, and is, for example, 100 ℃ or higher, preferably 120 ℃ or higher. The heating temperature (curing temperature) is, for example, 200 ℃ or less, preferably 180 ℃ or less. The heating time is, for example, 10 minutes or more, preferably 30 minutes or more. The heating time is, for example, 180 minutes or less, preferably 120 minutes or less.
Then, in the peeling step, as shown in fig. 1D, the temporary fixing base 10 is separated from the cured resin sheet 30A. When the temporary fixing surface 11 of the temporary fixing base 10 is formed of an adhesive layer whose adhesive force can be reduced by ultraviolet irradiation, the temporary fixing base 10 is separated from the cured resin sheet 30A after the adhesive force of the adhesive layer is reduced by ultraviolet irradiation. Thereby, the 1 st surface 31 of the cured resin sheet 30A in contact with the temporary fixing surface 11 and the end surface (the 1 st electrode surface 20A described later) of the 1 st portion 21 of the electrode 20 are exposed.
Then, in the grinding step, as shown in fig. 1E, the 2 nd surface side 32 of the cured resin sheet 30A (cured thermosetting resin sheet 30) is ground, and the end face of the 2 nd part 22 of the electrode 20 (the 2 nd electrode surface 20b described later) is exposed on the 2 nd surface 32 side. In this step, the electrode 20 may be ground together with the cured resin sheet 30A. For the grinding process, for example, a back grinding apparatus including a grinding wheel is used. The thickness of the cured resin sheet 30A after grinding is, for example, 80 μm or more, and 500 μm or less. The ratio of the height of the electrode 20 after grinding to the height of the electrode 20 before grinding (length in the thickness direction T) is, for example, 0.8 to 1.
The cured resin sheet X with electrodes is manufactured as described above. The cured resin sheet X with electrodes includes a sheet-like cured resin sheet 30A as a cured resin portion and a plurality of electrodes 20 arranged in the cured resin sheet 30A. The cured resin sheet 30A has a 1 st surface 31 and a 2 nd surface 32 opposite to the 1 st surface 31, and each of the electrodes 20 disposed and held in the cured resin sheet 30A has a 1 st electrode surface 20A exposed on the 1 st surface 31 side and a 2 nd electrode surface 20b exposed on the 2 nd surface 32 side. The plurality of electrodes 20 are provided in the cured resin sheet X with electrodes at positions corresponding to the type and number of electronic components to be mounted.
Fig. 3 shows a method for manufacturing a semiconductor package as an example of a method for using the cured resin sheet X with electrodes.
First, as shown in fig. 3A, the semiconductor chip 50 is mounted face down on the 2 nd surface Xb of the cured resin sheet X with electrodes. The semiconductor chip 50 is a semiconductor chip for wireless communication in the present embodiment. The operating frequency of the semiconductor chip 50 is, for example, 0.01 to 100GHz. The semiconductor chip 50 has a main surface 51 and a side surface 52. The main surface 51 is provided with terminals (not shown) for external connection. In the face-down mounting in this step, the 2 nd electrode surface 20b of the electrode 20 and the terminal of the main surface 51 are bonded one-to-one in a state where the 2 nd surface Xb of the cured resin sheet X with an electrode is in contact with the main surface 51 of the semiconductor chip 50. Examples of the joining method include ultrasonic joining and welding joining.
Then, as shown in fig. 3B, the sealing resin composition 60 in a semi-cured state is supplied onto the electrode-carrying cured resin sheet X so as to cover the semiconductor chip 50. The sealing resin composition 60 is, for example, a thermosetting resin composition containing a thermosetting resin.
Then, as shown in fig. 3C, the sealing resin composition 60 covering the semiconductor chip 50 is cured by heating, and a cured resin portion 60A is formed around the semiconductor chip 50 on the cured resin sheet X with an electrode. The heating temperature is, for example, 100 ℃ to 200 ℃.
Thereafter, the cured resin sheet X with electrodes and the cured resin portion 60A are cut along predetermined lines to be cut by, for example, a blade, and the semiconductor package is singulated. In the semiconductor package thus obtained, the semiconductor chip 50 is sealed by the cured resin sheet 30A as a cured resin portion of the cured resin sheet X with an electrode and the cured resin portion 60A formed of the sealing resin composition 60 in a state in which external connection can be made via the electrode 20 of the cured resin sheet X with an electrode. In such a semiconductor package, since the semiconductor chip 50 is mounted face down with respect to the cured resin sheet X with an electrode in a state of being in contact with the cured resin sheet X with an electrode, it is suitable for thinning compared with conventional face-up type semiconductor packages and face-down type semiconductor packages. That is, the cured resin sheet X with electrodes obtained by the manufacturing method of the present invention described above with reference to fig. 1 is suitable for manufacturing a thin semiconductor package.
The thermosetting resin sheet 30 shown in fig. 2 is an embodiment of the thermosetting resin sheet of the present invention, and is formed of a thermosetting composition. The thermosetting composition includes a thermosetting resin and an inorganic filler in this embodiment. The thermosetting resin sheet 30 is in a semi-cured state (B-stage state).
Examples of the thermosetting resin include epoxy resins, silicone resins, urethane resins, polyimide resins, urea resins, melamine resins, and unsaturated polyester resins. These thermosetting resins may be used alone, or two or more of them may be used in combination. The content ratio of the thermosetting resin in the thermosetting composition is preferably 3% by mass or more, and more preferably 3.5% by mass or more. The content ratio of the thermosetting resin in the thermosetting composition is preferably 35% by mass or less, and more preferably 30% by mass or less.
The thermosetting resin preferably comprises an epoxy resin. Examples of the epoxy resin include a 2-functional epoxy resin and a 3-or more-functional epoxy resin. Examples of the 2-functional epoxy resin include a bisphenol a type epoxy resin, a bisphenol F type epoxy resin, a modified bisphenol a type epoxy resin, a modified bisphenol F type epoxy resin, and a biphenyl type epoxy resin. Examples of the 3-or more-functional polyfunctional epoxy resin include phenol novolac type epoxy resins, cresol novolac type epoxy resins, trishydroxyphenylmethane type epoxy resins, tetrakis (hydroxyphenyl) ethane type epoxy resins, and dicyclopentadiene type epoxy resins. These epoxy resins may be used alone or in combination of two or more. As the epoxy resin, a 2-functional epoxy resin and/or the above-mentioned polyfunctional epoxy resin is preferably used, and a bisphenol F-type epoxy resin is more preferably used.
The epoxy equivalent of the epoxy resin is preferably 10g/eq or more, more preferably 50g/eq or more, and still more preferably 100g/eq or more. The epoxy equivalent of the epoxy resin is preferably 500g/eq or less, more preferably 450g/eq or less, and still more preferably 400g/eq or less. In the case where the thermosetting resin comprises a plurality of epoxy resins, the epoxy equivalent weight is a weighted average epoxy equivalent weight of the plurality of epoxy resins.
In the case of using an epoxy resin, the thermosetting resin preferably contains a phenol resin as a curing agent for the epoxy resin. This structure is suitable for forming a cured resin part having excellent sealing reliability from the thermosetting resin sheet 30 because the thermosetting resin sheet 30 exhibits high heat resistance and high chemical resistance after curing. As the phenol resin, phenol novolac type phenol resin and/or triphenylmethane type epoxy resin is preferably used. Examples of the phenol novolac resin include phenol novolac resin, phenol aralkyl resin, trishydroxyphenylmethane novolac resin, cresol novolac resin, tert-butylphenol novolac resin, and nonylphenol novolac resin. Examples of the triphenylmethane type epoxy resin include a trishydroxyphenylmethane type epoxy resin. These phenol resins may be used alone or in combination of two or more.
In the thermosetting composition, the amount of hydroxyl groups in the phenolic resin is preferably 0.7 equivalent or more, more preferably 0.9 equivalent or more, relative to 1 equivalent of epoxy groups of the epoxy resin. In the thermosetting composition, the amount of hydroxyl groups in the phenolic resin is preferably 1.5 equivalents or less, more preferably 1.2 equivalents or less, relative to 1 equivalent of the epoxy group of the epoxy resin. The amount of the phenolic resin blended is preferably 20 parts by mass or more, and more preferably 30 parts by mass or more, per 100 parts by mass of the epoxy resin. The amount of the phenolic resin as the curing agent is preferably 80 parts by mass or less, and more preferably 70 parts by mass or less, per 100 parts by mass of the epoxy resin.
Examples of the inorganic filler include inorganic particles having a solid structure (solid inorganic particles) and inorganic particles having a hollow structure (hollow inorganic particles).
Examples of the material of the solid inorganic particles include silica, calcium oxide, magnesium oxide, titanium oxide, alumina, zirconium oxide, cesium oxide, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, aluminum nitride, boron nitride, silicon nitride, and silicon carbide. The solid inorganic particles may be used alone or in combination of two or more. Solid silica fillers are preferably used as the solid inorganic particles.
The average particle diameter of the solid inorganic particles is preferably 0.1 μm or more, more preferably 0.5 μm or more. The same average particle diameter is preferably 20 μm or less, more preferably 10 μm or less. These configurations are preferable for ensuring good viscosity and electrode shape-following properties in the thermosetting resin sheet 30 in the bonding step (fig. 1B). The average particle size of the solid inorganic particles is a median particle size (a particle size having a cumulative frequency of volume from a small particle size side up to 50%) in a particle size distribution based on a volume, and can be determined based on a particle size distribution obtained by, for example, a laser diffraction scattering method (the same applies to average particle sizes of other inorganic fillers).
The content ratio of the solid inorganic particles in the thermosetting composition is preferably 60% by mass or more, more preferably 70% by mass or more, and still more preferably 80% by mass or more. This configuration is suitable for suppressing expansion and contraction due to temperature change in the thermosetting resin sheet 30. The content ratio of the same is preferably 90% by mass or less, and more preferably 85% by mass or less. This structure is suitable for ensuring the fluidity in the above-described bonding step (fig. 1B) of the thermosetting resin sheet 30.
As a material of the solid inorganic particles, a layered silicate compound can be also exemplified. The particles of the layered silicate compound in the thermosetting composition are components for thickening the thermosetting composition while imparting thixotropy to the thermosetting composition. Examples of the layered silicate compound include smectite, kaolinite, halloysite, talc, and mica. Examples of smectites include montmorillonite, beidellite, nontronite, saponite, hectorite, sauconite, and stevensite. As the layer silicate compound, smectite is preferably used, and montmorillonite is more preferably used, from the viewpoint of easy mixing with a thermosetting resin.
The layered silicate compound may be an unmodified compound whose surface is not modified, or a modified compound whose surface is modified with an organic component. For example, from the viewpoint of affinity with the 1 st thermosetting resin, it is preferable to use a layer silicate compound whose surface is modified with an organic component, more preferably use an organized smectite whose surface is modified with an organic component, and still more preferably use an organized bentonite whose surface is modified with an organic component.
Examples of the organic component include organic cations (onium ions) such as ammonium, imidazolium, pyridinium, and phosphonium. Examples of ammonium include dimethyldistearylammonium, distearylammonium, octadecylammonium, hexylammonium, octylammonium, 2-hexylammonium, dodecylammonium and trioctylammonium. Examples of the imidazolium include methylstearylimidazolium, distearylimidazolium, methylhexylimidazolium, dihexylimidazolium, methyloctylimidazolium, dioctylimidazolium, methyldodecylimidazolium, and didodecylimidazolium. Examples of the pyridinium include stearyl pyridinium, hexyl pyridinium, octyl pyridinium, and dodecyl pyridinium. Examples of the phosphonium include dimethyl distearyl phosphonium, octadecyl phosphonium, hexyl phosphonium, octyl phosphonium, 2-hexyl phosphonium, dodecyl phosphonium and trioctyl phosphonium. The organic cation may be used alone or in combination of two or more. Ammonium is preferably used as the organic cation, more preferably dimethyldistearylammonium.
It is preferable to use an organic smectite whose surface is modified with ammonium as the organic layered silicate compound, and it is more preferable to use an organic bentonite whose surface is modified with dimethyl distearyl ammonium.
The average particle diameter of the layered silicate compound is preferably 1nm or more, more preferably 5nm or more, and still more preferably 10nm or more. The average particle diameter of the layered silicate compound is preferably 100 μm or less, more preferably 50 μm or less, and still more preferably 10 μm or less.
The content ratio of the layer silicate compound in the thermosetting composition is preferably 1% by mass or more, more preferably 1.2% by mass or more, and still more preferably 1.4% by mass or more. This constitution is suitable for thickening a thermosetting composition and at the same time exhibiting thixotropy in the thermosetting composition in which the viscosity is reduced when subjected to a pressing force as compared with when not subjected to a pressing force. Such thixotropic properties are preferable for ensuring good electrode shape following properties in the thermosetting resin sheet 30 in the bonding step (fig. 1B). From the viewpoint of avoiding excessive thickening of the thermosetting composition, the content ratio of the layer silicate compound in the thermosetting composition is preferably 6% by mass or less, more preferably 5% by mass or less, and still more preferably 4% by mass or less.
Preferably, a hollow ceramic filler is used as the hollow inorganic particles. The hollow ceramic filler is a hollow filler formed of a fired inorganic material. Examples of the material of the hollow ceramic filler include oxide ceramics, nitride ceramics, carbide ceramics, and glass ceramics. Examples of the oxide ceramic include titanium oxide, aluminum oxide, zirconium oxide, and cesium oxide. Examples of the nitride ceramics include silicon nitride, titanium nitride, and aluminum nitride. Examples of the carbide ceramic include silicon carbide, titanium carbide, and tungsten carbide. Examples of the glass ceramic include aluminoborosilicate glass, aluminosilicate glass, lead borosilicate glass, and zinc borosilicate glass. Preferably, glass ceramics are used as the hollow ceramic filler, more preferably aluminoborosilicate glass.
The average particle diameter of the hollow ceramic filler is preferably 0.1 μm or more, and more preferably 0.5 μm or more. The same average particle diameter is preferably 30 μm or less, more preferably 20 μm or less, and still more preferably 10 μm or less.
The particle density of the hollow ceramic filler is preferably 0.3g/cm 3 Above, more preferably 0.5g/cm 3 The above is preferably 0.9g/cm 3 Hereinafter, more preferably 0.8g/cm 3 The following. Such a configuration is preferable for reducing the dielectric constant of the cured resin sheet 30A (cured resin portion) formed of the thermosetting resin sheet 30, and therefore, is preferable for reducing the transmission loss of the high-frequency signal passing through the cured resin portion in the semiconductor package.
From the viewpoint of reducing the transmission loss, the content ratio of the hollow ceramic filler in the thermosetting composition is preferably 15% by volume or more, more preferably 50% by volume or more, further preferably 60% by volume or more, further preferably 65% by volume or more, further preferably 70% by volume or more, and particularly preferably 75% by volume or more. From the viewpoint of reducing the transmission loss, the proportion of the hollow ceramic filler in the inorganic filler is preferably 20 vol% or more, more preferably 50 vol% or more, still more preferably 80 vol% or more, and particularly preferably 100 vol%. The content of the hollow ceramic filler in the thermosetting composition is preferably 85% by volume or less, more preferably 82% by volume or less, and still more preferably 80% by volume or less. The content ratio of the hollow ceramic filler in the thermosetting composition is preferably 90% by mass or less, and more preferably 85% by mass or less. This structure is suitable for securing fluidity in the above-described bonding step (fig. 1B) of the thermosetting resin sheet 30.
The content of the inorganic filler in the thermosetting composition is preferably 60% by mass or more, more preferably 70% by mass or more, and still more preferably 80% by mass or more. This configuration is suitable for suppressing expansion and contraction due to temperature change in the thermosetting resin sheet 30. The content of the same is preferably 90% by mass or less, more preferably 85% by mass or less. This structure is suitable for securing fluidity in the above-described bonding step (fig. 1B) of the thermosetting resin sheet 30.
The thermosetting composition may comprise other ingredients. Examples of the other components include a curing accelerator, a thermoplastic resin, a pigment, and a silane coupling agent.
The curing accelerator is a catalyst (heat curing catalyst) that accelerates curing of a thermosetting resin by heating. Examples of the curing accelerator include imidazole compounds and organic phosphorus compounds. Examples of the imidazole compound include 2-phenyl-4, 5-dihydroxymethylimidazole and 2-phenyl-4-methyl-5-hydroxymethylimidazole. Examples of the organic phosphorus compound include triphenylphosphine, tricyclohexylphosphine, tributylphosphine, and methyldiphenylphosphine. An imidazole compound is preferably used as the curing accelerator, and 2-phenyl-4, 5-dihydroxymethylimidazole is more preferably used. The amount of the curing accelerator to be blended is, for example, 0.05 parts by mass or more and 5 parts by mass or less with respect to 100 parts by mass of the thermosetting resin.
Examples of the thermoplastic resin include acrylic resins, natural rubbers, butyl rubbers, isoprene rubbers, chloroprene rubbers, ethylene-vinyl acetate copolymers, ethylene-acrylic acid copolymers, ethylene-acrylic ester copolymers, polybutadiene resins, polycarbonate resins, thermoplastic polyimide resins, polyamide resins, phenoxy resins, saturated polyester resins (PET and the like), polyamideimide resins, fluorine resins, and styrene-isobutylene-styrene block copolymers. These thermoplastic resins may be used alone or in combination of two or more.
From the viewpoint of ensuring compatibility between the thermosetting resin and the thermoplastic resin, an acrylic resin is preferably used as the thermoplastic resin. Examples of the acrylic resin include (meth) acrylic polymers which are polymers of monomer components including an alkyl (meth) acrylate having a linear or branched alkyl group and another monomer (copolymerizable monomer).
The glass transition temperature (Tg) of the thermoplastic resin is preferably-70 ℃ or higher. The same glass transition temperature is preferably 0 ℃ or lower, more preferably-5 ℃ or lower. As the glass transition temperature (Tg) of the polymer, a glass transition temperature (theoretical value) obtained based on the following Fox equation can be used. The Fox equation is a relationship between the glass transition temperature Tg of a polymer and the glass transition temperature Tgi of the homopolymer of the monomers that make up the polymer. In the following Fox formula, tg represents the glass transition temperature (. Degree. C.) of a polymer, wi represents the weight fraction of a monomer i constituting the polymer, and Tgi represents the glass transition temperature (. Degree. C.) of a homopolymer formed from the monomer i. As the glass transition temperature of the homopolymer, literature values can be used, and for example, the glass transition temperatures of various homopolymers are listed in "Polymer Handbook" (4 th edition, john Wiley & Sons, inc., 1999) and "synthetic resin for new high molecular library 7 paint" (entrance of synthetic resin for new high molecular library 7 paint) (north okang hitsu, press for Polymer, 1995). On the other hand, the glass transition temperature of a homopolymer of a monomer can be determined by a method specifically described in Japanese patent application laid-open No. 2007-51271.
Fox formula 1/(273 + Tg) =Sigma [ Wi/(273 + Tgi) ]
The weight average molecular weight of the thermoplastic resin is preferably 10 ten thousand or more, and preferably 30 ten thousand or more. The weight average molecular weight of the thermoplastic resin is preferably 200 ten thousand or less, and more preferably 100 ten thousand or less. The weight average molecular weight of the resin was determined based on standard polystyrene conversion values using Gel Permeation Chromatography (GPC).
The content ratio of the thermoplastic resin in the thermosetting composition is preferably 1% by mass or more, and more preferably 2% by mass or more. The content of the same is preferably 80% by mass or less, more preferably 60% by mass or less.
Examples of the pigment include black pigments such as carbon black. The particle diameter of the pigment is, for example, 0.001 μm or more and, for example, 1 μm or less. The particle diameter of the pigment is an arithmetic mean diameter obtained by observing the pigment with an electron microscope. The content of the pigment in the thermosetting composition is, for example, 0.1 mass% or more, and is, for example, 2 mass% or less.
Examples of the silane coupling agent include silane coupling agents containing an epoxy group. Examples of the epoxy group-containing silane coupling agent include 3-glycidoxyalkyldialkyldialkoxysilane and 3-glycidoxyalkyltrialkoxysilane. Examples of the 3-glycidoxydialkyldialkoxysilane include 3-glycidoxypropylmethyldimethoxysilane and 3-glycidoxypropylmethyldiethoxysilane. Examples of the 3-glycidoxyalkyltrialkoxysilane include 3-glycidoxypropyltrimethoxysilane and 3-glycidoxypropyltriethoxysilane. 3-glycidoxyalkyltrialkoxysilane is preferably used as the silane coupling agent, and 3-glycidoxypropyltrimethoxysilane is more preferably used. The content ratio of the silane coupling agent in the thermosetting composition is preferably 0.1% by mass or more, and more preferably 1% by mass or more. The content ratio of the same is preferably 10% by mass or less, and more preferably 5% by mass or less.
The thermosetting resin sheet 30 can be produced, for example, as follows.
First, the respective components described above for the thermosetting composition are kneaded with a solvent to prepare a varnish of the thermosetting composition. Examples of the solvent include methyl ethyl ketone, ethyl acetate, and toluene. Then, the varnish is applied to a substrate such as a release film to form a coating film, and the coating film is dried by heating. Thus, a composition film having a predetermined thickness in a semi-cured state can be formed as the thermosetting resin sheet 30 (in fig. 2, the thermosetting resin sheet 30 is disposed on the release film L indicated by a phantom line). Examples of the release film include a flexible plastic film. Examples of the plastic film include a polyethylene terephthalate film, a polyethylene film, a polypropylene film, and a polyester film. The thickness of the release film is, for example, 3 μm or more and, for example, 200 μm or less. The surface of the release film is preferably subjected to a mold release treatment.
In the case of manufacturing the thick thermosetting resin sheet 30, a plurality of composition films may be integrated by bonding under heating. The heating temperature is, for example, 70 ℃ to 90 ℃.
By performing the above operation, the thermosetting resin sheet 30 having a predetermined thickness can be produced. The thickness of the thermosetting resin sheet 30 is, for example, 10 μm or more, preferably 25 μm or more, and more preferably 30 μm or more. The thickness of the thermosetting resin sheet 30 is, for example, 3000 μm or less, preferably 1000 μm or less, more preferably 500 μm or less, further preferably 300 μm or less, and particularly preferably 100 μm or less.
The thermosetting resin sheet 30 is cured at 150 ℃ for 1 hour under heating, and then has a tensile storage modulus of 2GPa or more and 18GPa or less at 25 ℃. This configuration is suitable for separating the temporary fixing base 10 from the cured resin sheet 30A while suppressing the occurrence of plastic deformation and cracks in the cured resin sheet 30A in the above-described peeling step (fig. 1D). This thermosetting resin sheet 30 is suitable for use in the production of the cured resin sheet X with electrodes. From the viewpoint of suppressing the plastic deformation and cracks, the storage modulus of the thermosetting resin sheet 30 is preferably 5GPa or more, more preferably 7GPa or more, and further preferably 16GPa or less, more preferably 12GPa or less. The tensile storage modulus can be measured by the method described later with respect to the examples.
The thermosetting resin sheet 30 has a viscosity of 3kPa · s or more and 100kPa · s or less at 90 ℃. This structure is suitable for embedding the electrodes 20 in the thermosetting resin sheet 30 while suppressing formation of voids between the thermosetting resin sheet 30 and the electrodes 20 under the temperature condition of 90 ℃ and its vicinity in the above-described peeling step (fig. 1B). From the viewpoint of such embedding property, the viscosity of the thermosetting resin sheet 30 at 90 ℃ is preferably 5kPa · s or more, more preferably 6kPa · s or more, and is 90kPa · s or less and 80kPa · s or less. The viscosity at 90 ℃ can be determined by the measurement method described later with respect to the examples.
The thermosetting resin sheet 30 had a mass W1 after 1 st standing for 1 hour under the conditions of 150 c, 1 hour of heat treatment, and then 25 c and 40% relative humidity. The thermosetting resin sheet 30 had a mass W2 after 2 nd standing for 168 hours under the conditions of 85 ℃ and 85% relative humidity after 1 st standing. The moisture absorption rate of the thermosetting resin sheet 30 represented by [ (W2-W1)/W1 ] × 100 is preferably 0.3 mass% or less, and more preferably 0.2 mass% or less. Such a configuration is preferable for ensuring the sealing reliability of the cured resin part formed of the thermosetting resin sheet 30.
The thermosetting resin sheet 30 is cured at 150 ℃ for 1 hour under heating, and then has a relative dielectric constant at 10GHz of preferably 4.2 or less, more preferably 4.0 or less, and still more preferably 3.0 or less. Such a configuration is preferable for reducing transmission loss of a high-frequency signal passing through the cured resin portion formed of the thermosetting resin sheet 30. The relative dielectric constant is, for example, 1 or more. The relative dielectric constant can be measured by the method described later with respect to the examples.
Examples
The present invention will be described in more detail with reference to the following examples. The present invention is not limited to the examples. Specific numerical values such as the blending amount (content), the physical property value, and the parameter used in the following description may be replaced with the upper limit (numerical value defined as "lower" or "less than") or the lower limit (numerical value defined as "upper" or "greater") described in the above-described "embodiment" in accordance with the blending amount (content), the physical property value, and the parameter corresponding thereto.
[ examples 1 to 4 and comparative examples 1 and 2]
The respective components were mixed in the compounding formulations shown in table 1 to prepare varnishes of the compositions (the units of the respective numerical values representing the compositions in table 1 are relative "parts by mass"). Then, a varnish was applied to a polyethylene terephthalate film (PET film) whose surface was subjected to a silicone release treatment to form a coating film. Then, the coating film was dried by heating at 120 ℃ for 2 minutes to form a composition film having a thickness of 65 μm (the formed composition film was in a B-stage state) on the PET film. Then, the 4-sheet composition films were laminated at 80 ℃ to prepare a thermosetting resin sheet having a thickness of 260 μm (the resultant thermosetting resin sheet was in a B-stage state).
< viscosity of thermosetting resin sheet >
The viscosity at 90 ℃ was measured for each of the thermosetting resin sheets of examples 1 to 4 and comparative examples 1 and 2. In this measurement, a sample collected from a thermosetting resin sheet was held between a hot plate for heating and a parallel plate (diameter: 8 mm) arranged parallel to the hot plate in the same apparatus by using a rheometer (trade name: HAAKE MARS III, manufactured by Thermo Fisher Scientific Co., ltd.) so that the gap between the plates was 1mm. Thereafter, the viscosity was measured under the conditions of a frequency of 1Hz, a strain value of 0.005%, a measurement temperature range of 50 ℃ to 90 ℃ and a temperature rise rate of 30 ℃/min. The viscosity (kPa · s) at 90 ℃ is shown in Table 1.
< tensile storage modulus >
The tensile storage modulus after curing was measured as follows for each of the thermosetting resin sheets of examples 1 to 4 and comparative examples 1 and 2. First, the thermosetting resin sheet was cured by heating at 150 ℃ for 1 hour. Then, a sample piece (width 3 mm. Times. Length 40 mm. Times. Thickness 260. Mu.m) for measurement was cut out from the cured thermosetting resin sheet. Then, the tensile storage modulus was measured at a temperature ranging from-10 ℃ to 260 ℃ using a dynamic viscoelasticity measuring apparatus (trade name: RSA-G2, manufactured by TA Instruments). In this measurement, the initial inter-chuck distance of the sample piece holding chuck was set to 22.5mm, the measurement mode was set to the tensile mode, the temperature increase rate was set to 10 ℃/min, the frequency was set to 1Hz, and the dynamic strain was set to 0.05%. The tensile storage modulus (GPa) at 25 ℃ is shown in Table 1.
< moisture absorption Rate >
The moisture absorption rates of the thermosetting resin sheets of examples 1 to 4 and comparative examples 1 and 2 were examined as follows. First, the thermosetting resin sheet was cured by heating at 150 ℃ for 1 hour. Then, a sample piece for measurement (width 50 mm. Times. Length 50 mm. Times. Thickness 260 μm) was cut out from the cured thermosetting resin sheet. Then, the sample piece was allowed to stand at 25 ℃ and 40% relative humidity for 1 hour. Then, the mass of the sample piece (mass W1) was measured. Then, the sample piece was allowed to stand at 85 ℃ and 85% relative humidity for 168 hours. Then, the mass (mass W2) of the sample piece was measured. Thereafter, the moisture absorption rate represented by the following formula was calculated. The values (%) are shown in table 1.
Moisture absorption rate (%) = [ (W2-W1)/W1 ] × 100
< relative dielectric constant >
The relative dielectric constant at 10GHz after curing was measured for each of the thermosetting resin sheets of examples 1 to 4 and comparative examples 1 and 2 as follows. First, the thermosetting resin sheet was cured by heating at 150 ℃ for 1 hour. Then, a sample piece for measurement (width 30 mm. Times. Length 30 mm. Times. Thickness 260. Mu.m) was cut out from the cured thermosetting resin sheet. Then, the relative dielectric constant of the sample piece at 10GHz was measured using a PNA network analyzer (Agilent Technology) and SPDR (Split column dielectric resonators).
The measurement results are shown in table 1.
< evaluation of warpage >
The degree of warpage after curing was examined for each of the thermosetting resin sheets of examples 1 to 4 and comparative examples 1 and 2. Specifically, a laminate sample of a 42 alloy plate having dimensions of 90mm × 90mm × 150 μm in thickness and a thermosetting resin sheet bonded to the entire one surface of the 42 alloy plate in the thickness direction thereof was heated at 150 ℃ for 1 hour, and then left to stand at 25 ℃ for 1 hour. Thereafter, the maximum value of the distance between the mounting surface on which the laminate sample was mounted with the 42 alloy plate of the laminate sample as the lower side and the edge of the laminate sample was measured as the amount of warpage (mm). The results are shown in table 1.
< resistance to deformation and cracking >
The thermosetting resin sheets of examples 1 to 4 and comparative examples 1 and 2 were examined for the presence or absence of deformation and cracks during the production of the cured resin sheet with an electrode. Specifically, first, a thermosetting resin sheet is bonded to the temporary fixing surface of the temporary fixing base material having the plurality of electrodes arranged on the temporary fixing surface while the plurality of electrodes are embedded in the thermosetting resin sheet (fig. 1B). The temporary fixing base material was a SUS base material having a thickness of 100 μm. The electrode is made of copper, with a 1 st part (height 30 μm) of cylindrical shape and a 2 nd part (height 20 μm) of cylindrical shape of larger diameter. The distance between adjacent electrodes is about 100 to 150 μm. A vacuum press (trade name "vacuum pressure device VS008-1515", manufactured by MIKADOTECHNOS) was used for bonding. In the bonding, sealing is performed under a vacuum degree of 2000Pa or less under conditions of a temperature of 90 ℃, a pressing pressure of 0.1MPa, and a pressing time of 40 seconds, to obtain a bonded body. Then, the laminate (temporary fixing base, electrode, thermosetting resin sheet) was heated at 150 ℃ for 1 hour (fig. 1C). Thereby, the thermosetting resin sheet is cured to form a cured resin sheet holding the electrodes. Then, the laminate was allowed to stand at 25 ℃ for 1 hour. Then, the bonded body is peeled from the cured resin sheet with an electrode to temporarily fix the base material (fig. 1D). In the peeling, the peeling angle is set to 90 DEG to 145 DEG, and the peeling speed is set to about 300 mm/sec. Thereafter, the cured resin sheet with electrodes was visually observed to confirm the presence or absence of deformation and the presence or absence of cracks. The deformation/crack resistance of the cured thermosetting resin sheet was evaluated as "good" when neither deformation nor crack was generated, and as "poor" when deformation and/or crack was generated. The results are shown in table 1.
< electrode embeddability >
The embedding property of the electrode in the process of producing the cured resin sheet with an electrode was examined for each of the thermosetting resin sheets of examples 1 to 4 and comparative examples 1 and 2. Specifically, first, the cured resin sheet with electrodes provided for the evaluation of the deformation/crack resistance described above is cut in the thickness direction, and a predetermined electrode and a cross section of the cured resin portion around the electrode are cut. Then, the cross section was observed using an optical microscope. The embeddability of the electrode in the cured thermosetting resin sheet was evaluated as "good" when no void was generated between the electrode and the cured resin portion, and as "poor" when a void was generated. The results are shown in table 1.
[ Table 1]
The components used in the examples and comparative examples are shown below.
1, epoxy resin: "YSLV-80XY" (bisphenol F type epoxy resin, high molecular weight epoxy resin, epoxy equivalent 191g/eq, solid at room temperature, softening point 80 ℃ C.) manufactured by Nippon iron chemical Co., ltd.)
Epoxy resin No. 2: "EPPN-501HY" (polyfunctional epoxy resin, epoxy equivalent 169g/eq, solid at room temperature, softening point 60 ℃ C.) manufactured by Nippon chemical Co., ltd.)
1, phenolic resin: "LVR-8210DL" (Novolac phenol resin, latent curing agent, hydroxyl group equivalent 104g/eq, solid at room temperature, softening point 60 ℃ C.) manufactured by Rong chemical Co., ltd
No. 2 phenol resin: "TPM-100" (phenol-formaldehyde resin of triphenylmethane type, latent curing agent, hydroxyl group equivalent 98g/eq, solid at room temperature, softening point 108.2 ℃ C.) manufactured by Youngong chemical Co., ltd
Acrylic resin (acrylic polymer): "HME-2006M" manufactured by Kogyo Co., ltd. (carboxyl group-containing acrylic resin, methyl ethyl ketone solution having an acid value of 32mgKOH/g, a weight average molecular weight of 129 ten thousand, a glass transition temperature (Tg) -13.9 ℃ C., and a solid content concentration of 20 mass%)
Silica filler No. 1: "FB-8SM" manufactured by DENKA K.K. (spherical silica particles, average particle diameter 7.0 μm, no surface treatment)
Silica filler 2: a material prepared by subjecting "SC220G-SMJ" (spherical silica particles having an average particle diameter of 0.5 μm) manufactured by Admatechs to surface treatment with 3-methacryloxypropyltrimethoxysilane ("KBM-503" manufactured by shin-Etsu chemical Co., ltd.) (the silane coupling agent used in the surface treatment was 1 part by mass per 100 parts by mass of the silica particles)
Hollow ceramic filler: "CellSpheres" (aluminoborosilicate glass, hollow spherical particles having an average particle size of 4.0 μm and a particle density of 0.6g/cm, manufactured by Pacific Cement Co., ltd.) 3 )
Layered silicate compound: "ESBEN NX" (organized bentonite modified with dimethyl distearyl ammonium) manufactured by Hojun corporation
Curing accelerator: "2PHZ-PW" (2-phenyl-4, 5-dihydroxymethylimidazole) manufactured by four national chemical industries Ltd
Silane coupling agent: KBM-403 (3-glycidoxypropyltrimethoxysilane) manufactured by shin-Etsu chemical Co., ltd
Pigment: "carbon Black # 20" (average particle diameter 50 nm) manufactured by Mitsubishi chemical corporation
Solvent: methyl Ethyl Ketone (MEK)
The present invention relates to a method for producing a cured resin sheet with an electrode, and a thermosetting resin sheet.
The above embodiments are illustrative of the present invention, and the present invention should not be construed as being limited thereto. Modifications of the present invention that are obvious to those skilled in the art are included in the scope of the claims to be described later.
Industrial applicability
The method for producing a cured resin sheet with an electrode, the cured resin sheet with an electrode, and the thermosetting resin sheet of the present invention can be used for producing electronic component packages such as semiconductor packages.
Description of the reference numerals
Cured resin sheet for X-band electrode
T thickness direction
10. Temporary fixing base material
11. Temporary fixing surface
20. Electrode (electrode for electronic component)
20a 1 st electrode surface
20b 2 nd electrode surface
21. Part 1
22. Section 2
30. Thermosetting resin sheet
31. 1 st plane
32. The 2 nd surface
30A cured resin sheet
Claims (7)
1. A method for producing a cured resin sheet with electrodes,
it comprises the following steps:
a first step of disposing a plurality of electrodes for electronic components on a temporary fixing surface of a temporary fixing base having the temporary fixing surface;
a 2 nd step of bonding the 1 st surface of a thermosetting resin sheet having a 1 st surface and a 2 nd surface opposite to the 1 st surface to the temporary fixing surface of the temporary fixing base while embedding the plurality of electrodes for electronic components with the thermosetting resin sheet;
a 3 rd step of forming a cured resin sheet by thermally curing the thermosetting resin sheet;
a 4 th step of separating the temporary fixing base material from the cured resin sheet; and
and a 5 th step of grinding the 2 nd surface side of the cured resin sheet to expose the electrodes for electronic components on the 2 nd surface side.
2. The method of producing a cured resin sheet with electrode according to claim 1,
the thermosetting resin sheet has a tensile storage modulus of 2GPa or more and 18GPa or less at 25 ℃ after curing.
3. A cured resin sheet with electrodes, comprising:
a cured resin sheet having a 1 st surface and a 2 nd surface opposite to the 1 st surface; and
the plurality of electrodes for electronic components are arranged in the cured resin sheet, and each of the plurality of electrodes for electronic components has a 1 st electrode surface exposed on the 1 st surface side and a 2 nd electrode surface exposed on the 2 nd surface side.
4. A thermosetting resin sheet which is excellent in heat resistance,
a thermosetting resin sheet for producing a cured resin sheet with an electrode,
after curing, has a tensile storage modulus of 2GPa or more and 18GPa or less at 25 ℃.
5. The thermosetting resin sheet according to claim 4, having a viscosity of 3 kPa-s or more and 100 kPa-s or less at 90 ℃.
6. The thermosetting resin sheet according to claim 4 or 5, which has a mass W1 after 1 st standing for 1 hour under the conditions of 150 ℃,1 hour of heat treatment and then 25 ℃ and 40% relative humidity,
after the 2 nd standing for 168 hours under the conditions of 85 ℃ and 85% of relative humidity after the 1 st standing, the mass W2,
the moisture absorption rate represented by [ (W2-W1)/W1 ]. Times.100 is 0.3 mass% or less.
7. The thermosetting resin sheet according to any one of claims 4 to 6, having a relative dielectric constant at 10GHz of 4.2 or less.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021039162 | 2021-03-11 | ||
| JP2021-039162 | 2021-03-11 | ||
| PCT/JP2022/007845 WO2022190898A1 (en) | 2021-03-11 | 2022-02-25 | Method for manufacturing cured resin sheet with electrode, cured resin sheet with electrode, and thermosetting resin sheet |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115485820A true CN115485820A (en) | 2022-12-16 |
Family
ID=83226778
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202280004005.4A Pending CN115485820A (en) | 2021-03-11 | 2022-02-25 | Method for producing cured resin sheet with electrode, and thermosetting resin sheet |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPWO2022190898A1 (en) |
| KR (1) | KR20230155344A (en) |
| CN (1) | CN115485820A (en) |
| TW (1) | TW202242009A (en) |
| WO (1) | WO2022190898A1 (en) |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3312723B2 (en) * | 1996-10-09 | 2002-08-12 | 松下電器産業株式会社 | Heat conductive sheet, method of manufacturing the same, heat conductive substrate using the same, and method of manufacturing the same |
| KR20010064907A (en) | 1999-12-20 | 2001-07-11 | 마이클 디. 오브라이언 | wire bonding method and semiconductor package using it |
| JP2004172597A (en) * | 2002-10-30 | 2004-06-17 | Matsushita Electric Ind Co Ltd | Semiconductor device and its manufacturing method |
| JP2006012949A (en) * | 2004-06-23 | 2006-01-12 | Matsushita Electric Ind Co Ltd | Semiconductor device and its manufacturing method |
| JP6320239B2 (en) * | 2013-09-24 | 2018-05-09 | 日東電工株式会社 | Semiconductor chip sealing thermosetting resin sheet and semiconductor package manufacturing method |
| JP2016136567A (en) * | 2015-01-23 | 2016-07-28 | 日東電工株式会社 | Sealing sheet |
| JP2016171315A (en) * | 2015-03-09 | 2016-09-23 | 日東電工株式会社 | Adhesive sheet, method for manufacturing adhesive optical semiconductor element and method for manufacturing optical semiconductor device |
-
2022
- 2022-02-25 JP JP2022556569A patent/JPWO2022190898A1/ja active Pending
- 2022-02-25 KR KR1020227034336A patent/KR20230155344A/en unknown
- 2022-02-25 WO PCT/JP2022/007845 patent/WO2022190898A1/en active Application Filing
- 2022-02-25 CN CN202280004005.4A patent/CN115485820A/en active Pending
- 2022-03-09 TW TW111108543A patent/TW202242009A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022190898A1 (en) | 2022-09-15 |
| KR20230155344A (en) | 2023-11-10 |
| JPWO2022190898A1 (en) | 2022-09-15 |
| TW202242009A (en) | 2022-11-01 |
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