CN115377016A - Sealing resin sheet and electronic component device - Google Patents
Sealing resin sheet and electronic component device Download PDFInfo
- Publication number
- CN115377016A CN115377016A CN202210529457.6A CN202210529457A CN115377016A CN 115377016 A CN115377016 A CN 115377016A CN 202210529457 A CN202210529457 A CN 202210529457A CN 115377016 A CN115377016 A CN 115377016A
- Authority
- CN
- China
- Prior art keywords
- sealing resin
- resin layer
- less
- sealing
- resin sheet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 229920005989 resin Polymers 0.000 title claims abstract description 569
- 239000011347 resin Substances 0.000 title claims abstract description 569
- 238000007789 sealing Methods 0.000 title claims abstract description 470
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 111
- 239000011256 inorganic filler Substances 0.000 claims abstract description 67
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 67
- 239000000463 material Substances 0.000 claims description 35
- 230000009477 glass transition Effects 0.000 claims description 25
- 239000011800 void material Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 description 72
- 238000003825 pressing Methods 0.000 description 71
- 239000003822 epoxy resin Substances 0.000 description 65
- 229920000647 polyepoxide Polymers 0.000 description 65
- 238000001723 curing Methods 0.000 description 61
- 239000000758 substrate Substances 0.000 description 53
- -1 imidazole compound Chemical class 0.000 description 51
- 238000004519 manufacturing process Methods 0.000 description 48
- 239000005011 phenolic resin Substances 0.000 description 27
- 238000010438 heat treatment Methods 0.000 description 26
- 239000002245 particle Substances 0.000 description 22
- 239000000178 monomer Substances 0.000 description 21
- 239000003795 chemical substances by application Substances 0.000 description 18
- 230000000052 comparative effect Effects 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 14
- 239000004593 Epoxy Substances 0.000 description 12
- 239000006087 Silane Coupling Agent Substances 0.000 description 11
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 11
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 11
- 238000005259 measurement Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 11
- 229920003986 novolac Polymers 0.000 description 11
- 229920005992 thermoplastic resin Polymers 0.000 description 10
- 230000008719 thickening Effects 0.000 description 10
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 9
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 9
- 238000011049 filling Methods 0.000 description 9
- 230000035515 penetration Effects 0.000 description 9
- 239000000049 pigment Substances 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 125000003700 epoxy group Chemical group 0.000 description 8
- 229920000642 polymer Polymers 0.000 description 8
- 230000001629 suppression Effects 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- 230000008602 contraction Effects 0.000 description 7
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 6
- 125000000217 alkyl group Chemical group 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 229920000178 Acrylic resin Polymers 0.000 description 5
- 239000004925 Acrylic resin Substances 0.000 description 5
- 238000005336 cracking Methods 0.000 description 5
- 229920001519 homopolymer Polymers 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 150000003377 silicon compounds Chemical class 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 239000002966 varnish Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 4
- 239000000440 bentonite Substances 0.000 description 4
- 229910000278 bentonite Inorganic materials 0.000 description 4
- SVPXDRXYRYOSEX-UHFFFAOYSA-N bentoquatam Chemical compound O.O=[Si]=O.O=[Al]O[Al]=O SVPXDRXYRYOSEX-UHFFFAOYSA-N 0.000 description 4
- OGQYPPBGSLZBEG-UHFFFAOYSA-N dimethyl(dioctadecyl)azanium Chemical compound CCCCCCCCCCCCCCCCCC[N+](C)(C)CCCCCCCCCCCCCCCCCC OGQYPPBGSLZBEG-UHFFFAOYSA-N 0.000 description 4
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 229910021647 smectite Inorganic materials 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 4
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- UUQQGGWZVKUCBD-UHFFFAOYSA-N [4-(hydroxymethyl)-2-phenyl-1h-imidazol-5-yl]methanol Chemical compound N1C(CO)=C(CO)N=C1C1=CC=CC=C1 UUQQGGWZVKUCBD-UHFFFAOYSA-N 0.000 description 3
- VXYLRHJJKXASIK-UHFFFAOYSA-N benzhydrylbenzene;phenol Chemical compound OC1=CC=CC=C1.C1=CC=CC=C1C(C=1C=CC=CC=1)C1=CC=CC=C1 VXYLRHJJKXASIK-UHFFFAOYSA-N 0.000 description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000004615 ingredient Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 150000002892 organic cations Chemical class 0.000 description 3
- 229910052615 phyllosilicate Inorganic materials 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 230000000930 thermomechanical effect Effects 0.000 description 3
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- RAXXELZNTBOGNW-UHFFFAOYSA-O Imidazolium Chemical compound C1=C[NH+]=CN1 RAXXELZNTBOGNW-UHFFFAOYSA-O 0.000 description 2
- 150000008065 acid anhydrides Chemical class 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- GUJOJGAPFQRJSV-UHFFFAOYSA-N dialuminum;dioxosilane;oxygen(2-);hydrate Chemical compound O.[O-2].[O-2].[O-2].[Al+3].[Al+3].O=[Si]=O.O=[Si]=O.O=[Si]=O.O=[Si]=O GUJOJGAPFQRJSV-UHFFFAOYSA-N 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- RKWPMPQERYDCTB-UHFFFAOYSA-N ethyl n-[4-[benzyl(2-phenylethyl)amino]-2-(4-nitrophenyl)-1h-imidazo[4,5-c]pyridin-6-yl]carbamate Chemical compound N=1C(NC(=O)OCC)=CC=2NC(C=3C=CC(=CC=3)[N+]([O-])=O)=NC=2C=1N(CC=1C=CC=CC=1)CCC1=CC=CC=C1 RKWPMPQERYDCTB-UHFFFAOYSA-N 0.000 description 2
- 238000005227 gel permeation chromatography Methods 0.000 description 2
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 229910052901 montmorillonite Inorganic materials 0.000 description 2
- 150000002903 organophosphorus compounds Chemical class 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-O phosphonium Chemical compound [PH4+] XYFCBTPGUUZFHI-UHFFFAOYSA-O 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229920000058 polyacrylate Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-O pyridinium Chemical compound C1=CC=[NH+]C=C1 JUJWROOIHBZHMG-UHFFFAOYSA-O 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 125000000542 sulfonic acid group Chemical group 0.000 description 2
- 239000012756 surface treatment agent Substances 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- RUEBPOOTFCZRBC-UHFFFAOYSA-N (5-methyl-2-phenyl-1h-imidazol-4-yl)methanol Chemical compound OCC1=C(C)NC(C=2C=CC=CC=2)=N1 RUEBPOOTFCZRBC-UHFFFAOYSA-N 0.000 description 1
- IAUGBVWVWDTCJV-UHFFFAOYSA-N 1-(prop-2-enoylamino)propane-1-sulfonic acid Chemical compound CCC(S(O)(=O)=O)NC(=O)C=C IAUGBVWVWDTCJV-UHFFFAOYSA-N 0.000 description 1
- FFYRIXSGFSWFAQ-UHFFFAOYSA-N 1-dodecylpyridin-1-ium Chemical compound CCCCCCCCCCCC[N+]1=CC=CC=C1 FFYRIXSGFSWFAQ-UHFFFAOYSA-N 0.000 description 1
- AMKUSFIBHAUBIJ-UHFFFAOYSA-N 1-hexylpyridin-1-ium Chemical compound CCCCCC[N+]1=CC=CC=C1 AMKUSFIBHAUBIJ-UHFFFAOYSA-N 0.000 description 1
- HIWVFNVUJDPDKS-UHFFFAOYSA-N 1-octadecylpyridin-1-ium Chemical compound CCCCCCCCCCCCCCCCCC[N+]1=CC=CC=C1 HIWVFNVUJDPDKS-UHFFFAOYSA-N 0.000 description 1
- XDEQOBPALZZTCA-UHFFFAOYSA-N 1-octylpyridin-1-ium Chemical compound CCCCCCCC[N+]1=CC=CC=C1 XDEQOBPALZZTCA-UHFFFAOYSA-N 0.000 description 1
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 1
- PYOVYRAEANOJDK-UHFFFAOYSA-O 2,3-didodecyl-1h-imidazol-3-ium Chemical compound CCCCCCCCCCCCC=1NC=C[N+]=1CCCCCCCCCCCC PYOVYRAEANOJDK-UHFFFAOYSA-O 0.000 description 1
- GFVBIUIUYOEJTA-UHFFFAOYSA-O 2,3-dioctadecyl-1h-imidazol-3-ium Chemical compound CCCCCCCCCCCCCCCCCCC=1NC=C[N+]=1CCCCCCCCCCCCCCCCCC GFVBIUIUYOEJTA-UHFFFAOYSA-O 0.000 description 1
- YYQIIXAUOQHVEF-UHFFFAOYSA-O 2,3-dioctyl-1h-imidazol-3-ium Chemical compound CCCCCCCCC=1NC=C[N+]=1CCCCCCCC YYQIIXAUOQHVEF-UHFFFAOYSA-O 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 1
- QENRKQYUEGJNNZ-UHFFFAOYSA-N 2-methyl-1-(prop-2-enoylamino)propane-1-sulfonic acid Chemical compound CC(C)C(S(O)(=O)=O)NC(=O)C=C QENRKQYUEGJNNZ-UHFFFAOYSA-N 0.000 description 1
- OWOSSTCHCATHMM-UHFFFAOYSA-O 2-methyl-3-octyl-1h-imidazol-3-ium Chemical compound CCCCCCCCN1C=C[NH+]=C1C OWOSSTCHCATHMM-UHFFFAOYSA-O 0.000 description 1
- UHKPXKGJFOKCGG-UHFFFAOYSA-N 2-methylprop-1-ene;styrene Chemical compound CC(C)=C.C=CC1=CC=CC=C1.C=CC1=CC=CC=C1 UHKPXKGJFOKCGG-UHFFFAOYSA-N 0.000 description 1
- AGBXYHCHUYARJY-UHFFFAOYSA-N 2-phenylethenesulfonic acid Chemical compound OS(=O)(=O)C=CC1=CC=CC=C1 AGBXYHCHUYARJY-UHFFFAOYSA-N 0.000 description 1
- YYIOIHBNJMVSBH-UHFFFAOYSA-N 2-prop-2-enoyloxynaphthalene-1-sulfonic acid Chemical compound C1=CC=C2C(S(=O)(=O)O)=C(OC(=O)C=C)C=CC2=C1 YYIOIHBNJMVSBH-UHFFFAOYSA-N 0.000 description 1
- WJQOZHYUIDYNHM-UHFFFAOYSA-N 2-tert-Butylphenol Chemical compound CC(C)(C)C1=CC=CC=C1O WJQOZHYUIDYNHM-UHFFFAOYSA-N 0.000 description 1
- GMOKBQLJIIVDQQ-UHFFFAOYSA-O 3-dodecyl-2-methyl-1h-imidazol-3-ium Chemical compound CCCCCCCCCCCC[N+]=1C=CNC=1C GMOKBQLJIIVDQQ-UHFFFAOYSA-O 0.000 description 1
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- OFNISBHGPNMTMS-UHFFFAOYSA-N 3-methylideneoxolane-2,5-dione Chemical compound C=C1CC(=O)OC1=O OFNISBHGPNMTMS-UHFFFAOYSA-N 0.000 description 1
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- CYUZOYPRAQASLN-UHFFFAOYSA-N 3-prop-2-enoyloxypropanoic acid Chemical compound OC(=O)CCOC(=O)C=C CYUZOYPRAQASLN-UHFFFAOYSA-N 0.000 description 1
- HDPBBNNDDQOWPJ-UHFFFAOYSA-N 4-[1,2,2-tris(4-hydroxyphenyl)ethyl]phenol Chemical compound C1=CC(O)=CC=C1C(C=1C=CC(O)=CC=1)C(C=1C=CC(O)=CC=1)C1=CC=C(O)C=C1 HDPBBNNDDQOWPJ-UHFFFAOYSA-N 0.000 description 1
- SXIFAEWFOJETOA-UHFFFAOYSA-N 4-hydroxy-butyl Chemical group [CH2]CCCO SXIFAEWFOJETOA-UHFFFAOYSA-N 0.000 description 1
- FVCSARBUZVPSQF-UHFFFAOYSA-N 5-(2,4-dioxooxolan-3-yl)-7-methyl-3a,4,5,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C(C(OC2=O)=O)C2C(C)=CC1C1C(=O)COC1=O FVCSARBUZVPSQF-UHFFFAOYSA-N 0.000 description 1
- JSZCJJRQCFZXCI-UHFFFAOYSA-N 6-prop-2-enoyloxyhexanoic acid Chemical compound OC(=O)CCCCCOC(=O)C=C JSZCJJRQCFZXCI-UHFFFAOYSA-N 0.000 description 1
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- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
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- KWLMIXQRALPRBC-UHFFFAOYSA-L hectorite Chemical compound [Li+].[OH-].[OH-].[Na+].[Mg+2].O1[Si]2([O-])O[Si]1([O-])O[Si]([O-])(O1)O[Si]1([O-])O2 KWLMIXQRALPRBC-UHFFFAOYSA-L 0.000 description 1
- WGBBUURBHXLGFM-UHFFFAOYSA-N hexan-2-amine Chemical compound CCCCC(C)N WGBBUURBHXLGFM-UHFFFAOYSA-N 0.000 description 1
- MZYVNHPNOJJEIY-UHFFFAOYSA-N hexan-2-ylphosphane Chemical compound CCCCC(C)P MZYVNHPNOJJEIY-UHFFFAOYSA-N 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- BMVXCPBXGZKUPN-UHFFFAOYSA-O hexylazanium Chemical compound CCCCCC[NH3+] BMVXCPBXGZKUPN-UHFFFAOYSA-O 0.000 description 1
- CHXARDKIHSVFDK-UHFFFAOYSA-N hexylphosphane Chemical compound CCCCCCP CHXARDKIHSVFDK-UHFFFAOYSA-N 0.000 description 1
- REYJJPSVUYRZGE-UHFFFAOYSA-O hydron;octadecan-1-amine Chemical compound CCCCCCCCCCCCCCCCCC[NH3+] REYJJPSVUYRZGE-UHFFFAOYSA-O 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 229910052610 inosilicate Inorganic materials 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 229920003049 isoprene rubber Polymers 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 1
- 238000007561 laser diffraction method Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- UJNZOIKQAUQOCN-UHFFFAOYSA-N methyl(diphenyl)phosphane Chemical compound C=1C=CC=CC=1P(C)C1=CC=CC=C1 UJNZOIKQAUQOCN-UHFFFAOYSA-N 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- HKUFIYBZNQSHQS-UHFFFAOYSA-N n-octadecyloctadecan-1-amine Chemical compound CCCCCCCCCCCCCCCCCCNCCCCCCCCCCCCCCCCCC HKUFIYBZNQSHQS-UHFFFAOYSA-N 0.000 description 1
- 229920003052 natural elastomer Polymers 0.000 description 1
- 229920001194 natural rubber Polymers 0.000 description 1
- 229910000273 nontronite Inorganic materials 0.000 description 1
- SNQQPOLDUKLAAF-UHFFFAOYSA-N nonylphenol Chemical compound CCCCCCCCCC1=CC=CC=C1O SNQQPOLDUKLAAF-UHFFFAOYSA-N 0.000 description 1
- LYFSPQWNZMXDBG-UHFFFAOYSA-N octadecylphosphane Chemical compound CCCCCCCCCCCCCCCCCCP LYFSPQWNZMXDBG-UHFFFAOYSA-N 0.000 description 1
- IOQPZZOEVPZRBK-UHFFFAOYSA-O octylazanium Chemical compound CCCCCCCC[NH3+] IOQPZZOEVPZRBK-UHFFFAOYSA-O 0.000 description 1
- SWMBQMGPRYJSCI-UHFFFAOYSA-N octylphosphane Chemical compound CCCCCCCCP SWMBQMGPRYJSCI-UHFFFAOYSA-N 0.000 description 1
- 150000004010 onium ions Chemical class 0.000 description 1
- RPQRDASANLAFCM-UHFFFAOYSA-N oxiran-2-ylmethyl prop-2-enoate Chemical compound C=CC(=O)OCC1CO1 RPQRDASANLAFCM-UHFFFAOYSA-N 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 229920006287 phenoxy resin Polymers 0.000 description 1
- 239000013034 phenoxy resin Substances 0.000 description 1
- 125000002467 phosphate group Chemical group [H]OP(=O)(O[H])O[*] 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001084 poly(chloroprene) Polymers 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- UIIIBRHUICCMAI-UHFFFAOYSA-N prop-2-ene-1-sulfonic acid Chemical compound OS(=O)(=O)CC=C UIIIBRHUICCMAI-UHFFFAOYSA-N 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000000518 rheometry Methods 0.000 description 1
- 229910000275 saponite Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910000276 sauconite Inorganic materials 0.000 description 1
- 238000000790 scattering method Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052606 sorosilicate Inorganic materials 0.000 description 1
- 229920006132 styrene block copolymer Polymers 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 229920006259 thermoplastic polyimide Polymers 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 230000009974 thixotropic effect Effects 0.000 description 1
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
- WLPUWLXVBWGYMZ-UHFFFAOYSA-N tricyclohexylphosphine Chemical compound C1CCCCC1P(C1CCCCC1)C1CCCCC1 WLPUWLXVBWGYMZ-UHFFFAOYSA-N 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- XTAZYLNFDRKIHJ-UHFFFAOYSA-O trioctylazanium Chemical compound CCCCCCCC[NH+](CCCCCCCC)CCCCCCCC XTAZYLNFDRKIHJ-UHFFFAOYSA-O 0.000 description 1
- RMZAYIKUYWXQPB-UHFFFAOYSA-N trioctylphosphane Chemical compound CCCCCCCCP(CCCCCCCC)CCCCCCCC RMZAYIKUYWXQPB-UHFFFAOYSA-N 0.000 description 1
- AAAQKTZKLRYKHR-UHFFFAOYSA-N triphenylmethane Chemical compound C1=CC=CC=C1C(C=1C=CC=CC=1)C1=CC=CC=C1 AAAQKTZKLRYKHR-UHFFFAOYSA-N 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Laminated Bodies (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
Abstract
Provided are a sealing resin sheet (X) and an electronic component device, wherein the sealing resin sheet (X) achieves good hollow sealing performance even when the ratio of the mounting height to the mounting interval of an electronic component chip is large, and the sealing resin sheet (X) is provided with a sealing resin layer (11) and a sealing resin layer (12) in order in the thickness direction (D). The sealing resin layer (11) contains a 1 st thermosetting resin and a 1 st inorganic filler, and has an average linear thermal expansion rate of 20 ppm/DEG C or less after curing. The sealing resin layer (12) contains a No. 2 thermosetting resin and a No. 2 inorganic filler, and has an average linear thermal expansion rate of 20 ppm/DEG C or less after curing. The content ratio of the 1 st inorganic filler in the sealing resin layer (11) is different from the content ratio of the 2 nd inorganic filler in the sealing resin layer (12). The ratio of the thickness of the sealing resin layer (11) to the total thickness of the sealing resin sheet (X) is 0.37 to 0.82.
Description
Technical Field
The present invention relates to a sealing resin sheet and an electronic component device.
Background
Conventionally, an electronic component chip on a mounting board is sometimes sealed with a sealing resin sheet. The sealing resin sheet is a sheet-like sealing resin material containing a thermosetting resin.
On the other hand, as an electronic component chip, an electronic component chip mounted on a mounting substrate in a state of facing the substrate with a gap therebetween is known. Such an electronic component chip is sealed with a sealing resin sheet in the following manner, for example.
First, a sealing resin sheet having a predetermined thickness is pressed by a flat press against a plurality of electronic component chips (opposed to a substrate via a gap) which are bonded to the same surface of a mounting substrate and are separated from each other (pressing step). Thereby, the sealing resin sheet is heated and softened and plastically deformed to cover the electronic component chips. Next, the sealing resin sheet covering the electronic component chip is cured by heating at a high temperature (curing step). Thereby, a cured resin portion is formed around each electronic component chip on the substrate, and each electronic component chip is sealed with resin. Thereafter, the cured resin portion is cut together with the substrate by, for example, dicing with a blade, and the electronic component packages are singulated (singulation step). For example, patent document 1 listed below describes a technique relating to such resin sealing of electronic component chips.
Documents of the prior art
Patent document
[ patent document 1] Japanese patent laid-open No. 2015-53470
Disclosure of Invention
Problems to be solved by the invention
In the sealing resin sheet, it is required that the sealing resin sheet be fluidized in a heat-softened state in the pressing step and that a surface (exposed surface) on the opposite side of the electronic component chip be flattened (high fluidity is required). In addition, the electronic component chip side of the sealing resin sheet is required to prevent the sealing resin that is temporarily softened by heating at a high temperature from excessively entering a gap between the mounting board and the electronic component chip in the curing step (a requirement for low fluidity). As described above, the sealing resin sheet is required to have different properties with respect to fluidity when softened by heating on the electronic component chip side and on the opposite side. In order to satisfy these different requirements, the sealing resin sheet described in patent document 1 has a laminated structure of a 1 st resin layer (a resin layer disposed on the side of an electronic component chip in the case of electronic component chip sealing) and a 2 nd resin layer having different filler contents from each other.
However, in the sealing resin sheet of patent document 1, the ratio of the thickness of the 1 st resin layer to the thickness of the 2 nd resin layer is 0.05 to 0.3. That is, the ratio of the thickness of the 1 st resin layer to the entire thickness of the sealing resin sheet is 0.048 to 0.23. If the sealing resin sheet is so thin that the 1 st resin layer is, the greater the ratio of the mounting height (the height from the substrate surface on the side opposite to the substrate among the electronic component chips) to the mounting interval (the distance between adjacent chips) of the plurality of electronic component chips on the substrate, the more easily the portion of the 1 st resin layer on the electronic component chip side covering the chip corner portion (ridge line portion) is broken in the sealing process. Specifically, as the mounting height of the plurality of electronic component chips on the substrate increases, the 1 st resin layer is stretched and thinned in the pressing step, and is more likely to be broken. Further, as the mounting interval of the plurality of electronic component chips on the substrate becomes narrower, the 1 st resin layer is stretched and made thinner in the pressing step, and is more likely to be broken.
In addition, internal stress is generated in the sealing resin sheet (sealing resin material) that is heat-cured in the curing step. The internal stress may cause warpage in a work (for example, a work in which a plurality of electronic component chips on a substrate are sealed with a sealing resin sheet) obtained through a curing step. If the warpage of the workpiece is too large, the process after the curing step cannot be appropriately performed. For example, the surface of the produced resin sealing body cannot be appropriately laser-marked.
The invention provides a sealing resin sheet, which is a sheet for resin sealing an electronic component chip mounted on a base material in a state of facing the base material through a gap, and is suitable for realizing good hollow sealing performance even if the ratio of the mounting height to the mounting interval of the electronic component chip is large. The present invention also provides an electronic component device in which an electronic component chip is sealed with such a sealing resin sheet.
Means for solving the problems
The present invention [1] includes a sealing resin sheet including a 1 st sealing resin layer and a 2 nd sealing resin layer in this order in a thickness direction, the 1 st sealing resin layer including a 1 st thermosetting resin and a 1 st inorganic filler and having an average linear thermal expansion coefficient of 20 ppm/DEG C or less in a temperature range from-40 ℃ to a glass transition temperature after curing, the 2 nd sealing resin layer including a 2 nd thermosetting resin and a 2 nd inorganic filler and having an average linear thermal expansion coefficient of 20 ppm/DEG C or less in a temperature range from-40 ℃ to a glass transition temperature after curing, a content ratio of the 1 st inorganic filler in the 1 st sealing resin layer being different from a content ratio of the 2 nd inorganic filler in the 2 nd sealing resin layer, and a ratio of a thickness of the 1 st sealing resin layer in an entire thickness of the sealing resin sheet being 0.37 or more and 0.82 or less.
The sealing resin sheet can be used for sealing an electronic component chip mounted on a base material in a state of facing the base material through a gap, through the following pressing step and curing step. In the pressing step, the 1 st sealing resin layer side of the sealing resin sheet is heated and softened in a state of being in contact with the electronic component chip on the base material, and the sheet is pressed toward the base material. In this step, the gap is closed along the side surface of the electronic component chip by the 1 st sealing resin layer that is in close contact with the base material around the electronic component chip. In the curing step, the sealing resin sheet covering the electronic component chip is further heated and cured. Thereby, a cured resin portion is formed around the electronic component chip on the base material, and the electronic component chip is sealed with resin. In such a sealing process, the 1 st inorganic filler content ratio of the sealing resin sheet in the 1 st sealing resin layer disposed on the electronic component chip side (1 st side) is different from the 2 nd inorganic filler content ratio of the sealing resin sheet in the 2 nd sealing resin layer disposed on the 2 nd side opposite to the 1 st side. Such a configuration is suitable for expressing different characteristics in the 1 st sealing resin layer and the 2 nd sealing resin layer. In particular, it is suitable to: the 2 nd sealing resin layer exhibits high fluidity so as to promote planarization of the 2 nd side (exposed surface side) of the sealing resin sheet in the pressing step, while the 1 st sealing resin layer exhibits low fluidity so that the sealing resin temporarily softened by high-temperature heating in the curing step does not excessively enter the space between the base material and the electronic component chip.
In the sealing resin sheet, as described above, the ratio of the thickness of the 1 st sealing resin layer to the entire thickness of the sealing resin sheet is 0.37 or more. Such a configuration is suitable for suppressing cracking of a portion of the 1 st sealing resin layer covering a corner portion (ridge line portion) of the chip in the pressing step even when the ratio of the mounting height to the mounting interval of the electronic component chip is large. Such crack suppression of the 1 st sealing resin layer is adapted to suppress a part of the 2 nd sealing resin layer from flowing into the electronic component chip side through the crack portion of the 1 st sealing resin layer. If the resin flows into the space between the electronic component chip and the 1 st sealing resin layer as a 2 nd sealing resin layer having higher fluidity than the 1 st sealing resin layer in the pressing step, the resin flows into the space between the base material and the electronic component chip and further flows into the space excessively. The sealing resin sheet is suitable for avoiding such a problem.
In addition, in the sealing resin sheet, as described above, the ratio of the thickness of the 1 st sealing resin layer to the entire thickness of the sealing resin sheet is 0.82 or less. Such a configuration is suitable for filling the gap between adjacent chips with the sealing resin while ensuring the fluidity of the entire sealing resin sheet in the above-described pressing step, even when the ratio of the mounting height to the mounting interval of the electronic component chip is large.
In addition, as described above, the 1 st and 2 nd sealing resin layers of the sealing resin sheet have an average linear thermal expansion coefficient of 20 ppm/DEG C or less in a temperature range from-40 ℃ to the glass transition temperature after curing. Such a configuration is suitable for suppressing internal stress in the 1 st and 2 nd sealing resin layers after being cured by heating at a high temperature, for example, being cooled to room temperature in the sealing resin sheet. Suppression of internal stress in the 1 st and 2 nd sealing resin layers after curing is suitable for suppressing warpage in an electronic component device as a resin sealing body manufactured using a sealing resin sheet. The suppression of the warpage is suitable for suppressing the cured resin part formed of the sealing resin sheet from separating from the base material.
The invention [2] includes the sealing resin sheet according to [1], wherein the 1 st sealing resin layer has a thickness of 90 μm or more.
Such a configuration is preferable from the viewpoint of suppressing the above-described cracking of the 1 st sealing resin layer in the pressing step.
The invention [3] includes the sealing resin sheet according to [1] or [2], wherein the 1 st sealing resin layer has a lowest melt viscosity of 120kPa · s or more.
Such a configuration is preferable for suppressing excessive penetration (excessive penetration) of the 1 st sealing resin layer temporarily softened by high-temperature heating in the curing step into the gap between the base material and the electronic component chip.
The invention [4] includes the sealing resin sheet according to any one of [1] to [3], wherein the 1 st sealing resin layer has a minimum melt viscosity of 260kPa · s or less.
Such a configuration is preferable for filling the gaps between adjacent chips with the sealing resin while ensuring the fluidity of the entire sealing resin sheet in the pressing step.
The invention [5] is directed to the sealing resin sheet according to any one of [1] to [4], further comprising a 3 rd sealing resin layer between the 1 st sealing resin layer and the 2 nd sealing resin layer, wherein the 3 rd sealing resin layer contains a 3 rd thermosetting resin and a 3 rd inorganic filler, and has an average linear thermal expansion coefficient of 20 ppm/DEG C or less in a temperature range from-40 ℃ to a glass transition temperature after curing.
The sealing resin sheet preferably includes the 3 rd sealing resin layer as described above in addition to the 1 st sealing resin layer in order to suppress the 2 nd sealing resin layer from flowing into the electronic component chip side in the pressing step.
The invention [6] includes the sealing resin sheet according to [5], wherein the 3 rd sealing resin layer and the 1 st sealing resin layer are in direct contact, and a ratio of a total thickness of the 1 st sealing resin layer and a total thickness of the 3 rd sealing resin layer in an entire thickness of the sealing resin sheet is 0.4 or more and 0.82 or less.
Such a configuration is preferable for suppressing the inflow of the 2 nd sealing resin layer to the electronic component chip side in the pressing process.
The invention [7] includes the sealing resin sheet according to any one of [1] to [6], wherein a content ratio of the inorganic filler in each sealing resin layer is 75% by mass or more.
Such a configuration is preferable for achieving the above-mentioned average linear thermal expansion coefficient of 20 ppm/DEG C or less in each sealing resin layer.
The invention [8] includes the sealing resin sheet according to any one of [1] to [7], wherein a content ratio of the inorganic filler in each sealing resin layer is 90% by mass or less.
Such a configuration is preferable for ensuring the fluidity required for the sealing resin sheet in the pressing step.
The present invention [9] includes an electronic component device including a base material, an electronic component chip mounted on the base material in a state of facing the base material with a gap therebetween, and a cured resin portion formed of the sealing resin sheet according to any one of [1] to [8] and sealing the electronic component chip and the gap.
In this electronic component device, the electronic component chip is sealed by the cured resin portion formed of the sealing resin sheet, and therefore, it is preferable to achieve good hollow sealing properties.
Drawings
Fig. 1 is a schematic cross-sectional view of an embodiment of a sealing resin sheet of the present invention.
Fig. 2A to 2C show a method for sealing an electronic component chip on a base material using the sealing resin sheet shown in fig. 1. Fig. 2A shows a step of placing the work and the sealing resin sheet between pressing plates in a flat press, fig. 2B shows a pressing step, and fig. 2C shows a curing step.
Fig. 3 is a schematic cross-sectional view of a modified example of the sealing resin sheet shown in fig. 1. In the present modification, the sealing resin sheet has a 3-layer structure.
Fig. 4A to 4C fig. 4A shows a step of preparing a sealing resin sheet, fig. 4B shows a step of placing a work and the sealing resin sheet between pressing plates in a flat press, fig. 4C shows a pressing step, and fig. 4D shows a curing step.
Description of the reference numerals
Resin sheet for X-ray sealing
D thickness direction
11. Sealing resin layer (1 st sealing resin layer)
12. Sealing resin layer (No. 2 sealing resin layer)
13. Sealing resin layer (No. 3 sealing resin layer)
W workpiece
S substrate
Sa mounting surface
21. Chip and method for manufacturing the same
21a main surface
21b side surface
22. Bump electrode
P1 st pressboard
P2 nd pressing plate
Detailed Description
The sealing resin sheet X, which is an embodiment of the sealing resin sheet of the present invention, is a sheet-like sealing resin material for sealing an electronic component chip such as a semiconductor chip, and includes a sealing resin layer 11 and a sealing resin layer 12 in this order in a thickness direction D as shown in fig. 1. The sealing resin sheet X is spread in a direction orthogonal to the thickness direction D.
The sealing resin layer 11 is a layer formed of the 1 st thermosetting composition. The 1 st thermosetting composition comprises a 1 st thermosetting resin and a 1 st inorganic filler material. That is, the sealing resin layer 11 contains the 1 st thermosetting resin and the 1 st inorganic filler. The sealing resin layer 11 is in a semi-cured state (B-stage state)
Examples of the 1 st thermosetting resin include epoxy resins, silicone resins, urethane resins, polyimide resins, urea resins, melamine resins, and unsaturated polyester resins. These 1 st thermosetting resins may be used alone, or two or more of them may be used in combination. The content ratio of the 1 st thermosetting resin in the 1 st thermosetting composition is preferably 3% by mass or more, and more preferably 3.5% by mass or more. The content ratio of the 1 st thermosetting resin in the 1 st thermosetting composition is preferably 30% by mass or less, and more preferably 25% by mass or less.
The 1 st thermosetting resin preferably comprises an epoxy resin. Examples of the epoxy resin include a 2-functional epoxy resin and a 3-or more-functional epoxy resin. Examples of the 2-functional epoxy resin include a bisphenol a type epoxy resin, a bisphenol F type epoxy resin, a modified bisphenol a type epoxy resin, a modified bisphenol F type epoxy resin, and a biphenyl type epoxy resin. Examples of the 3-or more-functional polyfunctional epoxy resin include phenol novolac type epoxy resins, cresol novolac type epoxy resins, trishydroxyphenylmethane type epoxy resins, tetraphenolethane type epoxy resins, and dicyclopentadiene type epoxy resins. These epoxy resins may be used alone, or two or more kinds thereof may be used in combination. As the epoxy resin, a 2-functional epoxy resin is preferably used, and a bisphenol F type epoxy and/or a bisphenol a type epoxy resin is more preferably used.
The epoxy equivalent of the epoxy resin is preferably 10g/eq or more, more preferably 50g/eq or more, and still more preferably 100g/eq or more. The epoxy equivalent of the epoxy resin is preferably 650g/eq or less, more preferably 600g/eq or less, and still more preferably 550g/eq or less. When the 1 st thermosetting resin contains a plurality of epoxy resins, the weighted average epoxy equivalent weight of the plurality of epoxy resins is preferably 10g/eq or more, more preferably 50g/eq or more, and still more preferably 100g/eq or more. The weighted average epoxy equivalent is preferably 650g/eq or less, more preferably 600g/eq or less, and still more preferably 550g/eq or less.
In the case of using an epoxy resin, the 1 st thermosetting resin preferably contains a phenol resin as a curing agent for the epoxy resin. Such a configuration is suitable for forming a sealing material having excellent sealing reliability because the sealing resin sheet X after curing exhibits high heat resistance and high chemical resistance. Preferred examples of the phenol resin include a phenol novolac type phenol resin and a phenol triphenylmethane type resin. As the phenol novolac resin, for example, phenol novolac resin, phenol aralkyl resin, trishydroxyphenylmethane novolac resin, cresol novolac resin, t-butylphenol novolac resin, and nonylphenol novolac resin can be cited. These phenol resins may be used alone, or two or more of them may be used in combination.
In the 1 st thermosetting composition, the amount of hydroxyl groups in the phenol resin as the curing agent is preferably 0.7 equivalent or more, more preferably 0.9 equivalent or more, relative to 1 equivalent of epoxy groups in the epoxy resin. In the 1 st thermosetting composition, the amount of hydroxyl groups in the phenol resin as the curing agent is preferably 1.5 equivalents or less, more preferably 1.2 equivalents or less, relative to 1 equivalent of epoxy groups in the epoxy resin. The amount of the phenol resin as the curing agent is preferably 20 parts by mass or more, and more preferably 40 parts by mass or more, per 100 parts by mass of the epoxy resin. The amount of the phenol resin as the curing agent is preferably 80 parts by mass or less, and more preferably 60 parts by mass or less, per 100 parts by mass of the epoxy resin.
The 1 st thermosetting composition preferably comprises a curing accelerator. The curing accelerator is a catalyst (heat curing catalyst) that accelerates curing of the thermosetting resin by heating. Examples of the curing accelerator include imidazole compounds and organic phosphorus compounds. Examples of the imidazole compound include 2-phenyl-4,5-dimethylol imidazole and 2-phenyl-4-methyl-5-hydroxymethyl imidazole. Examples of the organic phosphorus compound include triphenylphosphine, tricyclohexylphosphine, tributylphosphine, and methyldiphenylphosphine. As the curing accelerator, an imidazole compound is preferably used, and 2-phenyl-4,5-dimethylolimidazole is more preferably used. The amount of the curing accelerator is, for example, 0.05 part by mass or more per 100 parts by mass of the 1 st thermosetting resin. Further, it is, for example, 5 parts by mass or less.
Examples of the 1 st inorganic filler include a layered silicate compound and an inorganic filler other than a layered silicate compound. The 1 st inorganic filler preferably contains a layered silicate compound and an inorganic filler other than the layered silicate compound.
The layer silicate compound is a component that causes the 1 st thermosetting composition to exhibit thixotropy and causes the 1 st thermosetting composition to be tackified, and is dispersed in the 1 st thermosetting composition. Examples of the layered silicate compound include smectite, kaolin, halloysite, talc, and mica. Examples of smectites include montmorillonite, beidellite, nontronite, saponite, hectorite, sauconite, and stevensonite. As the layer silicate compound, smectite is preferably used, and montmorillonite is more preferably used, because it can be easily mixed with a thermosetting resin.
The layered silicate compound may be an unmodified product whose surface is not modified, or may be a modified product whose surface is modified with an organic component. For example, from the viewpoint of affinity with the 1 st thermosetting resin, it is preferable to use a layer silicate compound whose surface is modified with an organic component, more preferably an organic smectite whose surface is modified with an organic component, and still more preferably an organic bentonite whose surface is modified with an organic component.
Examples of the organic component include organic cations (onium ions) such as ammonium, imidazolium, pyridinium, and phosphonium. Examples of ammonium include dimethyldistearylammonium, distearylammonium, octadecylammonium, hexylammonium, octylammonium, 2-hexylammonium, dodecylammonium and trioctylammonium. Examples of the imidazolium include methylstearylimidazolium, distearylimidazolium, methylhexylimidazolium, dihexylimidazolium, methyloctylimidazolium, dioctylimidazolium, methyldodecylimidazolium, and didodecylimidazolium. Examples of the pyridinium include stearyl pyridinium, hexyl pyridinium, octyl pyridinium, and dodecyl pyridinium. Examples of the phosphonium include dimethyl distearyl phosphonium, octadecyl phosphonium, hexyl phosphonium, octyl phosphonium, 2-hexyl phosphonium, dodecyl phosphonium and trioctyl phosphonium. The organic cation may be used alone or in combination of two or more. As the organic cation, ammonium is preferably used, and dimethyldistearylammonium is more preferably used.
As the organic layered silicate compound, it is preferable to use an organic smectite whose surface is modified with ammonium, and it is more preferable to use an organic bentonite whose surface is modified with dimethyl distearyl ammonium.
The average particle diameter of the layered silicate compound is preferably 1nm or more, more preferably 5nm or more, and still more preferably 10nm or more. The average particle diameter of the layer silicate compound is preferably 100 μm or less, more preferably 50 μm or less, and still more preferably 10 μm or less.
The average particle size of the layered silicate compound is a median particle size (a particle size having a cumulative frequency of volume from a small diameter side of 50%) in a volume-based particle size distribution, and is determined based on a particle size distribution obtained by, for example, a laser diffraction/scattering method (the same applies to the average particle size of other inorganic fillers).
As the layer silicate compound, commercially available products can be used. As a commercial product of the organized bentonite, for example, S-BEN series (manufactured by HOJUN) is available.
The content ratio of the layer silicate compound in the 1 st thermosetting composition (i.e., the content ratio of the layer silicate compound in the sealing resin layer 11) is preferably 1% by mass or more, more preferably 1.2% by mass or more, and still more preferably 1.4% by mass or more. Such a configuration is suitable for thickening the sealing resin layer 11, and exhibits lower thixotropy in the sealing resin layer 11 when the sealing resin layer 11 is subjected to a pressing force than when the sealing resin layer is not subjected to a pressing force. From the viewpoint of avoiding excessive thickening of the 1 st thermosetting composition, the content ratio of the layer silicate compound in the 1 st thermosetting composition is preferably 6% by mass or less, more preferably 5% by mass or less, and still more preferably 4% by mass or less.
Examples of the inorganic filler other than the phyllosilicate compound include silicon compounds such as silicon dioxide and silicon nitride (silicon compounds other than phyllosilicate compounds), and silicate compounds other than phyllosilicate compounds such as orthosilicate, sorosilicate and inosilicate. Examples of the inorganic filler other than the layered silicate compound include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium oxide, magnesium oxide, aluminum nitride, aluminum borate whisker, and boron nitride. These inorganic fillers may be used alone, or two or more kinds may be used in combination. As the inorganic filler, a silicon compound other than the layered silicate compound is preferably used, and silica is more preferably used.
Examples of the shape of the inorganic filler other than the layered silicate compound include a substantially spherical shape, a substantially plate shape, a substantially needle shape, and an amorphous shape, and a substantially spherical shape is preferable.
The average particle diameter of the inorganic filler other than the layered silicate compound (the average of the maximum length of the inorganic filler in the case where the inorganic filler has a shape other than a substantially spherical shape) is preferably 0.1 μm or more, and more preferably 0.5 μm or more. The average particle diameter is preferably 50 μm or less, more preferably 20 μm or less, and still more preferably 10 μm or less.
The surface of the inorganic filler other than the layer silicate compound may be partially or entirely treated with a surface treatment agent such as a silane coupling agent.
The content ratio of the inorganic filler other than the layered silicate compound in the 1 st thermosetting composition is preferably 73% by mass or more, more preferably 76% by mass or more, and still more preferably 78% by mass or more. Such a configuration is suitable for suppressing expansion and contraction due to a temperature change in the sealing resin layer 11. The content ratio is preferably 90% by mass or less, more preferably 85% by mass or less, and still more preferably 83% by mass or less. Such a configuration is suitable for ensuring the fluidity of the sealing resin layer 11 in the pressing step described later while avoiding excessive thickening of the 1 st thermosetting composition.
The content ratio R1 of the 1 st inorganic filler in the 1 st thermosetting composition (sealing resin layer 11) is preferably 75% by mass or more, more preferably 78% by mass or more, and still more preferably 80% by mass or more. Such a configuration is suitable for suppressing expansion and contraction due to temperature change in the sealing resin layer 11, and is preferable for achieving an average linear thermal expansion coefficient of 20 ppm/deg.c or less. The content ratio R1 is preferably 90% by mass or less, more preferably 87% by mass or less, and further preferably 85% by mass or less. Such a configuration is suitable for avoiding excessive thickening of the 1 st thermosetting composition and ensuring fluidity of the sealing resin layer 11 in a pressing step to be described later.
The proportion of the layer silicate compound in the 1 st inorganic filler is preferably 0.5% by mass or more, more preferably 1% by mass or more, and still more preferably 1.5% by mass or more. The proportion is preferably 8% by mass or less, more preferably 7% by mass or less, and further preferably 6.5% by mass or less. These configurations are suitable for achieving suppression of expansion and contraction due to temperature change in the sealing resin layer 11, securing of fluidity in a pressing step described later, and exhibition of the thixotropy in a well-balanced manner.
The 1 st thermosetting composition may contain other ingredients. Examples of the other components include a thermoplastic resin, a pigment, and a silane coupling agent.
Examples of the thermoplastic resin include acrylic resins, natural rubbers, butyl rubbers, isoprene rubbers, chloroprene rubbers, ethylene-vinyl acetate copolymers, ethylene-acrylic acid ester copolymers, polybutadiene resins, polycarbonate resins, thermoplastic polyimide resins, polyamide resins, phenoxy resins, saturated polyester resins (PET and the like), polyamideimide resins, fluorine resins, and styrene-isobutylene-styrene block copolymers. These thermoplastic resins may be used alone, or two or more of them may be used in combination.
As the thermoplastic resin, an acrylic resin is preferably used from the viewpoint of ensuring compatibility between the thermosetting resin and the thermoplastic resin.
Examples of the acrylic resin include (meth) acrylic polymers that are polymers of monomer components including alkyl (meth) acrylates having a linear or branched alkyl group and other monomers (copolymerizable monomers).
Examples of the alkyl group of the alkyl (meth) acrylate include alkyl groups having 1 to 6 carbon atoms. Examples of the alkyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, a n-butyl group, a tert-butyl group, an isobutyl group, a pentyl group, and a hexyl group.
Examples of the copolymerizable monomer include a carboxyl group-containing monomer, an acid anhydride monomer, a glycidyl group-containing monomer, a hydroxyl group-containing monomer, a sulfonic acid group-containing monomer, a phosphoric acid group-containing monomer, and acrylonitrile. Examples of the carboxyl group-containing monomer include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Examples of the acid anhydride monomer include maleic anhydride and itaconic anhydride. Examples of the glycidyl group-containing monomer include glycidyl acrylate and glycidyl methacrylate. Examples of the hydroxyl group-containing monomer include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, and 12-hydroxylauryl (meth) acrylate. Examples of the sulfonic acid group-containing monomer include styrenesulfonic acid, allylsulfonic acid, 2- (meth) acrylamido-2-methylpropanesulfonic acid, (meth) acrylamidopropanesulfonic acid, sulfopropyl (meth) acrylate, and (meth) acryloyloxynaphthalenesulfonic acid. Examples of the monomer having a phosphate group include 2-hydroxyethyl acryloyl phosphate. These copolymerizable monomers may be used alone or in combination of two or more.
The glass transition temperature (Tg) of the thermoplastic resin is preferably-70 ℃ or higher. The glass transition temperature is preferably 0 ℃ or lower, more preferably-5 ℃ or lower.
As the glass transition temperature (Tg) of the polymer, a glass transition temperature (theoretical value) determined based on the following Fox formula can be used. The Fox formula is a relationship between the glass transition temperature Tg of a polymer and the glass transition temperature Tgi of a homopolymer of monomers constituting the polymer. In the following Fox formula, tg represents the glass transition temperature (. Degree. C.) of the polymer, wi represents the weight fraction of the monomer i constituting the polymer, and Tgi represents the glass transition temperature (. Degree. C.) of a homopolymer formed from the monomer i. As the glass transition temperatures of homopolymers, literature values can be used, for example, the glass transition temperatures of various homopolymers are listed in "Polymer Handbook" (4 th edition, john Wiley & Sons, inc., 1999) and "synthetic resin for New Polymer library 7 coating entry" (Japanese text: synthetic resin for New high molecular library 7 coating entry) "(Beijing, chaga, the Row society of macromolecules, 1995). On the other hand, the glass transition temperature of a homopolymer of a monomer can be determined by a method specifically described in Japanese patent laid-open No. 2007-51271.
Fox formula 1/(273 + Tg) = Σ [ Wi/(273 + Tgi) ]
The weight average molecular weight of the thermoplastic resin is preferably 10 ten thousand or more, and preferably 30 ten thousand or more. The weight average molecular weight of the thermoplastic resin is preferably 200 ten thousand or less, and more preferably 100 ten thousand or less. The weight average molecular weight of the resin was determined by Gel Permeation Chromatography (GPC) and based on standard polystyrene conversion values.
The content ratio of the thermoplastic resin in the 1 st thermosetting composition is preferably 1% by mass or more, and more preferably 2% by mass or more. The content ratio is preferably 80% by mass or less, and more preferably 60% by mass or less.
Examples of the pigment include black pigments such as carbon black. The particle diameter of the pigment is, for example, 0.001 μm or more, for example, 1 μm or less. The particle size of the pigment is an arithmetic average particle size obtained by observing the pigment with an electron microscope. The content of the pigment in the 1 st thermosetting composition is, for example, 0.1% by mass or more, and is, for example, 2% by mass or less.
Examples of the silane coupling agent include silane coupling agents containing an epoxy group. Examples of the epoxy group-containing silane coupling agent include 3-glycidoxyalkyldialkyldialkoxysilane and 3-glycidoxyalkyltrialkoxysilane. Examples of the 3-glycidoxydialkyldialkoxysilane include 3-glycidoxypropylmethyldimethoxysilane and 3-glycidoxypropylmethyldiethoxysilane. Examples of the 3-glycidoxyalkyltrialkoxysilane include 3-glycidoxypropyltrimethoxysilane and 3-glycidoxypropyltriethoxysilane. As the silane coupling agent, 3-glycidoxyalkyltrialkoxysilane is preferably used, and 3-glycidoxypropyltrimethoxysilane is more preferably used. The content ratio of the silane coupling agent in the 1 st thermosetting composition is preferably 0.1% by mass or more, and more preferably 1% by mass or more. The content ratio is preferably 10% by mass or less, and more preferably 5% by mass or less.
The sealing resin layer 12 is a layer formed of the 2 nd thermosetting composition. The 2 nd thermosetting composition contains a 2 nd thermosetting resin and a 2 nd inorganic filler material. That is, the sealing resin layer 12 contains the 2 nd thermosetting resin and the 2 nd inorganic filler material. The sealing resin layer 12 is in a semi-cured state (B-stage state).
Examples of the 2 nd thermosetting resin include the 1 st thermosetting resin described above. The content ratio of the 2 nd thermosetting resin in the 2 nd thermosetting composition is preferably 3% by mass or more, and more preferably 3.5% by mass or more. The content ratio of the 2 nd thermosetting resin in the 2 nd thermosetting composition is preferably 30% by mass or less, and more preferably 25% by mass or less.
The 2 nd thermosetting resin preferably contains an epoxy resin. Examples of the epoxy resin include the epoxy resins described above for the 1 st thermosetting composition, preferably a 2-functional epoxy resin is used, and more preferably a bisphenol a type epoxy resin and/or a bisphenol F type epoxy resin is used. The preferred range of epoxy equivalent of the epoxy resin in the 2 nd thermosetting composition is the same as that described above as the preferred range of epoxy equivalent of the epoxy resin in the 1 st thermosetting composition.
In the case where an epoxy resin is used as the 2 nd thermosetting resin, the 2 nd thermosetting resin preferably contains a phenol resin as a curing agent for the epoxy resin. Preferred examples of the phenol resin include a phenol novolac type phenol resin and a phenol triphenylmethane type resin. In the 2 nd thermosetting composition, the amount of hydroxyl groups in the phenol resin as a curing agent in 1 equivalent to the epoxy group of the epoxy resin is the same as the amount of hydroxyl groups in the phenol resin as a curing agent in 1 equivalent to the epoxy group of the epoxy resin as described above with respect to the 1 st thermosetting composition. In addition, in the 2 nd thermosetting composition, the amount of the phenol resin as the curing agent added to 100 parts by mass of the epoxy resin is the same as the amount of the phenol resin as the curing agent added to 100 parts by mass of the epoxy resin as described above with respect to the 1 st thermosetting composition.
The 2 nd thermosetting composition preferably contains a curing accelerator. Examples of the curing accelerator include the curing accelerators described above for the 1 st thermosetting composition. The amount of the curing accelerator is, for example, 0.05 parts by mass or more and 5 parts by mass or less per 100 parts by mass of the 2 nd thermosetting resin.
Examples of the 2 nd inorganic filler include the 1 st inorganic filler as described above with respect to the 1 st thermosetting composition. The inorganic filler 2 is preferably an inorganic filler other than a layered silicate compound, more preferably a silicon compound other than a layered silicate compound, and still more preferably silica.
Examples of the shape of the 2 nd inorganic filler include a substantially spherical shape, a substantially plate shape, a substantially needle shape, and an amorphous shape, and a substantially spherical shape is preferable. The average particle diameter of the 2 nd inorganic filler (the average of the maximum length of the 2 nd inorganic filler when the 2 nd inorganic filler has a shape other than a substantially spherical shape) is preferably 0.1 μm or more, and more preferably 0.5 μm or more. The average particle diameter is preferably 50 μm or less, more preferably 20 μm or less, and still more preferably 10 μm or less. The surface of the 2 nd inorganic filler may be partially or entirely treated with a surface treatment agent such as a silane coupling agent.
The content ratio R2 of the 2 nd inorganic filler in the 2 nd thermosetting composition (sealing resin layer 12) is different from the content ratio R1 of the 1 st inorganic filler in the sealing resin layer 11. The content ratio R2 is, for example, higher than the content ratio R1, for example, lower than the content ratio R1.
The content ratio R2 of the 2 nd inorganic filler in the 2 nd thermosetting composition is preferably 75% by mass or more, more preferably 78% by mass or more, and further preferably 80% by mass or more, as long as it is different from the above content ratio R1. Such a configuration is suitable for suppressing expansion and contraction due to temperature change in the sealing resin layer 12, and is preferable for achieving an average linear thermal expansion coefficient of 20 ppm/deg.c or less. The content ratio R2 is preferably 90% by mass or less, more preferably 87% by mass or less, and further preferably 85% by mass or less, as long as it is different from the content ratio R1. Such a configuration is suitable for ensuring the fluidity of the sealing resin layer 12 in the pressing step described later.
The 2 nd thermosetting composition may contain other ingredients. Examples of the other components include the same thermoplastic resins, pigments, and silane coupling agents as those described above with respect to the 1 st thermosetting composition.
The sealing resin sheet X can be produced, for example, by forming the sealing resin layer 11 and the sealing resin layer 12 separately and then bonding the sealing resin layer 11 and the sealing resin layer 12 together.
The sealing resin layer 11 can be formed, for example, as follows. First, the respective components described above for the 1 st thermosetting composition are mixed with a solvent at a predetermined ratio to prepare a varnish of the 1 st thermosetting composition. Examples of the solvent include methyl ethyl ketone, ethyl acetate, and toluene. Next, the varnish is applied onto a substrate such as a release sheet to form a coating film, and then the coating film is dried by heating. Thereby, the sealing resin layer 11 having a sheet shape and in a semi-cured state can be formed.
The sealing resin layer 12 can be formed, for example, as follows. First, the respective components described above for the 2 nd thermosetting composition are mixed with a solvent at a predetermined ratio to prepare a varnish of the 2 nd thermosetting composition. Next, the varnish is applied onto a substrate such as a release sheet to form a coating film, and then the coating film is heated and dried. Thereby, the sealing resin layer 12 having a sheet shape and in a semi-cured state can be formed.
The sealing resin sheet X can be produced by forming a sealing resin layer 11 on a base material and forming a sealing resin layer 12 on the sealing resin layer 11. Alternatively, the sealing resin sheet X may be produced by forming the sealing resin layer 12 on the base material and forming the sealing resin layer 11 on the sealing resin layer 12.
The ratio of the thickness H1 of the sealing resin layer 11 in the entire thickness of the sealing resin sheet X is 0.37 or more, preferably 0.4 or more, more preferably 0.5 or more, and still more preferably 0.6 or more. That is, the ratio of the thickness H2 of the sealing resin layer 12 in the entire thickness of the sealing resin sheet X is 0.63 or less, preferably 0.6 or less, more preferably 0.5 or less, and still more preferably 0.4 or less. Such a configuration is suitable for suppressing the cracking of the sealing resin layer 11 in the pressing step described later.
The ratio of the thickness H1 of the sealing resin layer 11 to the entire thickness of the sealing resin sheet X is 0.82 or less, preferably 0.8 or less. That is, the ratio of the thickness H2 of the sealing resin layer 12 in the entire thickness of the sealing resin sheet X is 0.18 or more, preferably 0.2 or more. Such a configuration is suitable for filling the gaps between adjacent chips with the sealing resin while ensuring the overall fluidity of the sealing resin sheet X in the pressing step described later.
The thickness of the sealing resin layer 11 is preferably 90 μm or more, more preferably 100 μm or more, and further preferably 120 μm or more. Such a configuration is preferable from the viewpoint of suppressing cracking of the sealing resin layer 11 in a pressing step described later. The thickness of the sealing resin layer 11 is, for example, 300 μm or less, more preferably 250 μm or less, still more preferably 200 μm or less, and particularly preferably 180 μm or less. Such a configuration is preferable for filling the gaps between adjacent chips with the sealing resin while ensuring the overall fluidity of the sealing resin sheet X in the pressing step described later.
The thickness H2 of the sealing resin layer 12 is preferably 30 μm or more, more preferably 50 μm or more, still more preferably 80 μm or more, and particularly preferably 100 μm or more. The thickness H2 of the sealing resin layer 12 is, for example, 300 μm or less, preferably 250 μm or less, more preferably 200 μm or less, and particularly preferably 180 μm or less.
The thickness of the sealing resin sheet X as a whole is preferably 150 μm or more, more preferably 200 μm or more, and still more preferably 230 μm or more. The thickness of the entire sealing resin sheet X is preferably 500 μm or less, more preferably 400 μm or less, still more preferably 300 μm or less, and particularly preferably 280 μm or less.
The minimum melt viscosity of the sealing resin layer 11 is preferably 120kPa · s or more, more preferably 150kPa · s or more, further preferably 180kPa · s or more, and particularly preferably 200kPa · s or more. Such a configuration is preferable for suppressing excessive penetration (excessive penetration) of the sealing resin layer 11, which is temporarily softened by high-temperature heating in a curing step described later, into a gap between the base material and the electronic component chip. The minimum melt viscosity of the sealing resin layer can be determined by measuring the viscoelasticity of the sealing resin layer. Viscoelasticity measurements can be performed by rheometry. As the rheometer, for example, "HAAKE MARS III" manufactured by Thermo Fisher Scientific Co., ltd. In the measurement, the frequency was set to 1Hz, the strain value was set to 0.005%, the temperature range was set to 50 ℃ to 90 ℃, and the temperature rise rate was set to 30 ℃/min. Specifically, the lowest melt viscosity can be obtained by the measurement method described below with respect to the examples.
The minimum melt viscosity of the sealing resin layer 11 is preferably 260kPa · s or less, more preferably 250kPa · s or less, and further preferably 240kPa · s or less. Such a configuration is preferable for filling the gaps between adjacent chips with the sealing resin while ensuring the overall fluidity of the sealing resin sheet X in the pressing step described later.
The minimum melt viscosity of the sealing resin layer 12 is preferably 1kPa · s or more, more preferably 3kPa · s or more, and further preferably 200kPa · s or less, more preferably 180kPa · s or less. Such a configuration is preferable for filling the gaps between adjacent chips with the sealing resin while ensuring the overall fluidity of the sealing resin sheet X in the pressing step described later.
The sealing resin layer 11 has an average linear thermal expansion rate Z1 of 20 ppm/deg.c or less in a temperature range from-40 deg.c to the glass transition temperature after being cured by heating at 150 deg.c for 1 hour, and the sealing resin layer 12 has an average linear thermal expansion rate Z2 of 20 ppm/deg.c or less in a temperature range from-40 deg.c to the glass transition temperature after being cured by heating at 150 deg.c for 1 hour. Such a configuration is suitable for suppressing internal stress in the sealing resin layers 11 and 12 after being cured by heating at a high temperature, for example, being cooled to room temperature in the sealing resin sheet X. The average linear thermal expansion rate Z1 is preferably 18 ppm/DEG C or less, more preferably 17 ppm/DEG C or less. The average linear thermal expansion rate Z2 is preferably 18 ppm/DEG C or less, more preferably 17 ppm/DEG C or less. The average linear thermal expansion coefficient of the sealing resin layer can be measured using a thermomechanical analyzer (TMA). The TMA may be, for example, "Q400 TMA" manufactured by TA Instruments Japan. In the measurement, the mode was set to the stretching mode, the temperature rise rate was set to 1 ℃/min, the conditioning conditions were set to. + -. 5.000 ℃/300 seconds, and the measurement temperature range was set to-40 ℃ to 260 ℃. Specifically, the average linear thermal expansion coefficient can be obtained by the measurement method described later with respect to the examples.
The ratio of the average linear thermal expansion coefficient Z2 to the average linear thermal expansion coefficient Z1 is preferably 0.7 or more, more preferably 0.8 or more, further preferably 0.9 or more, and further preferably 1.3 or less, more preferably 1.2 or less, further preferably 1.1 or less. Such a configuration is preferable for suppressing the warpage of the sealing resin sheet X after curing.
Fig. 2A to 2C show a method of sealing an electronic component chip on a base material with a sealing resin sheet X.
Next, as shown in fig. 2A, the work W and the sealing resin sheet X are disposed between the 1 st pressing plate P1 and the 2 nd pressing plate P2 provided in the flat press (disposing step).
The workpiece W includes a substrate S and a plurality of chips 21. The substrate S is a base material that is later singulated into individual mounting substrates, and has a mounting surface Sa. The mounting surface Sa is provided with terminals (not shown) for mounting. The chip 21 is an electronic component chip such as a semiconductor chip, and has a main surface 21a and a side surface 21b. The main surface 21a is provided with terminals (not shown) for external connection. The chip 21 is mounted on the substrate S via the bump electrode 22 in a state of facing the substrate S with the gap G therebetween. Each bump electrode 22 is interposed between a terminal provided on the mounting surface Sa of the substrate S and a terminal provided on the main surface 21a of the chip 21, and electrically connects the substrate S and the chip 21.
The mounting height of the chip 21 on the substrate S (the height from the surface of the substrate S on the opposite side of the chip 21 from the substrate S) is, for example, 200 μm or more, preferably 220 μm, and more preferably 250 μm or more. The mounting height is, for example, 400 μm or less, preferably 350 μm or less, and more preferably 300 μm or less.
The separation distance between the substrate S and the chip 21 is, for example, 10 μm or more, preferably 15 μm or more, and more preferably 20 μm or more. The separation distance is, for example, 80 μm or less, preferably 60mm or less, and more preferably 50 μm or less.
The plurality of chips 21 are mounted on the mounting surface Sa of the substrate S at intervals in the surface direction. The interval (mounting interval) between the adjacent chips 21 is, for example, 50 μm or more, preferably 100 μm or more, and more preferably 200 μm or more. The interval between the adjacent chips 21 is, for example, 10mm or less, preferably 5mm or less, and more preferably 1mm or less.
In this step, the workpiece W is placed on the 1 st pressing plate P1 such that the substrate S thereof is in contact with the 1 st pressing plate P1. The sealing resin sheet X is laminated on the work W such that the sealing resin layer 11 is in contact with the chips 21 of the work W.
Next, as shown in fig. 2B, the sealing resin sheet X and the work W are pressed in the thickness direction D by the 1 st pressing plate P1 and the 2 nd pressing plate P2 (pressing step). Specifically, the sealing resin sheet X is pressed against the substrate S while being heated and softened in a state where the sealing resin layer 11 side of the sealing resin sheet X is in contact with the chip 21 on the substrate S.
The pressing pressure is, for example, 0.01MPa or more, preferably 0.05MPa or more. The pressing pressure is, for example, 10MPa or less, preferably 5MPa or less. The pressing time is, for example, 0.3 minutes or more, preferably 0.5 minutes or more. The pressing time is, for example, 10 minutes or less, preferably 5 minutes or less. The heating temperature during pressing is, for example, 40 ℃ or higher, preferably 60 ℃ or higher. The heating temperature is, for example, 100 ℃ or lower, preferably 95 ℃ or lower.
In this step, the sealing resin sheet X is brought into contact with the mounting surface Sa of the substrate S that does not overlap the chips 21 in plan view while covering the side surfaces 21B of the chips 21 while maintaining the B-stage and changing in accordance with the outer shapes of the chips 21. The gap G is closed along the side surface 21b of the chip 21 by the sealing resin layer 11 tightly adhered to the substrate S around the chip 21 (the open edge of the gap G is closed with an open end (Japanese: open end)).
The deformed sealing resin sheet X is allowed to slightly enter the gap G between the substrate S and the chip 21. Specifically, the sealing resin sheet X is allowed to have an insertion length L1 into the gap G with reference to the side surface 21b of the chip 21.
The entry length L1 is preferably 50 μm or less, more preferably 30 μm or less. Such a configuration is suitable for ensuring a region in which wiring can be formed in the main surface 21a of the chip 21 and for ensuring a region in which wiring can be formed in the mounting surface Sa of the substrate S, and therefore, functions to improve the functions of the resin sealing body. The entry length L1 is preferably 0 μm or more. Such a configuration is suitable for appropriately sealing the chip 21 and the gap G so that the gap G does not open to the outside of the resin sealing body in an electronic component device as a resin sealing body after singulation described later.
Next, the work W sealed with the sealing resin sheet X is taken out of the flat press, and then, as shown in fig. 2C, the sealing resin sheet X is heated and cured (curing step). Thereby, a cured resin portion is formed around each chip 21 on the substrate S, and each chip 21 is sealed with resin.
The heating temperature (curing temperature) is, for example, 100 ℃ or higher, preferably 120 ℃ or higher. The heating temperature (curing temperature) is, for example, 200 ℃ or lower, preferably 180 ℃ or lower. The heating time is, for example, 10 minutes or longer, preferably 30 minutes or longer. The heating time is, for example, 180 minutes or less, preferably 120 minutes or less.
The penetration length L2 of the voids G in the cured sealing resin sheet X is preferably 50 μm or less, and more preferably 30 μm or less. Such a configuration is suitable for securing a region where wiring can be formed in the main surface 21a of the chip 21 and for securing a region where wiring can be formed in the mounting surface Sa of the substrate S, and therefore functions to improve the functionality of the resin sealing body. The entry length L2 is preferably 0 μm or more. Such a configuration is suitable for appropriately sealing the chip 21 and the gap G so that the gap G does not open to the outside of the resin sealing body in an electronic component device which is a resin sealing body after singulation described later.
Thereafter, the cured sealing resin sheet X and the substrate S are cut along a predetermined line to cut by, for example, blade cutting, and are singulated into an electronic component device as a resin sealing body (singulation step). The electronic component device thus obtained includes: the electronic component includes a substrate S as a base material, a chip 21 as an electronic component chip mounted on the substrate S in a state of facing the substrate S with a gap G therebetween, and a cured resin portion formed of a sealing resin sheet X and sealing the chip 21 and the gap G.
In the sealing resin sheet X, the content ratio R1 of the 1 st inorganic filler in the sealing resin layer 11 disposed on the chip 21 side (1 st side) in the sealing process as described above is different from the content ratio R2 of the 2 nd inorganic filler in the sealing resin layer 12 disposed on the 2 nd side opposite to the 1 st side. Such a constitution is suitable for exhibiting different characteristics in the sealing resin layer 11 and the sealing resin layer 12. In particular, it is suitable to: in the pressing step (fig. 2B), high fluidity is exhibited in the sealing resin layer 12 so as to advance the planarization of the 2 nd side (exposed surface side) of the sealing resin sheet X, and on the other hand, low fluidity is exhibited in the sealing resin layer 11 so that the sealing resin temporarily softened by the high-temperature heating in the curing step (fig. 2C) does not excessively enter the gap G between the substrate S and the chip 21.
As described above, the ratio of the thickness of the sealing resin layer 11 to the entire thickness of the sealing resin sheet X is 0.37 or more, preferably 0.4 or more, more preferably 0.5 or more, and still more preferably 0.6 or more. Such a configuration is suitable for suppressing cracking of a portion of the sealing resin layer 11 covering a corner portion (ridge line portion) of the chip 21 in the pressing step (fig. 2B) even when the ratio of the mounting height to the mounting interval of the chip 21 is large. Such crack suppression of the sealing resin layer 11 is suitable for suppressing a part of the sealing resin layer 12 from flowing into the chip 21 side through the crack portion of the sealing resin layer 11. If the inflow is generated in the sealing resin layer 12 having higher fluidity than the sealing resin layer 11 in the pressing step, the inflow resin may flow between the chip 21 and the sealing resin layer 11, reach the gap G between the substrate S and the chip 21, and excessively enter the gap G. The sealing resin sheet X is suitable for avoiding such a problem.
In addition, as described above, the ratio of the thickness H1 of the sealing resin layer 11 to the entire thickness of the sealing resin sheet X is 0.82 or less, preferably 0.8 or less. Such a configuration is suitable for filling the gap between adjacent chips 21 with the sealing resin while ensuring the overall fluidity of the sealing resin sheet X in the pressing step (fig. 2B) even when the ratio of the mounting height to the mounting interval of the chips 21 is large.
In addition, in the sealing resin sheet X, as described above, each sealing resin layer has an average linear thermal expansion coefficient of 20ppm/° c or less in a temperature range from-40 ℃ to the glass transition temperature after curing. Such a configuration is suitable for suppressing internal stress in each sealing resin layer after being cured by heating at a high temperature, for example, being cooled to room temperature in the sealing resin sheet X. Suppression of internal stress in each sealing resin layer after curing is suitable for suppressing warpage in an electronic component device as a resin sealing body manufactured using the sealing resin sheet X. This suppression of the warpage is suitable for suppressing the cured resin portion formed of the sealing resin sheet X from coming off the substrate S.
As described above, the sealing resin layer 11 preferably contains a layered silicate compound. Such a configuration is suitable for thickening the sealing resin layer 11, and exhibits, in the sealing resin layer 11: and thixotropy which is lower in viscosity when the pressing force is applied than when the pressing force is not applied. The thixotropic property in the sealing resin layer 11 is preferably exhibited such that the sealing resin layer 12 is softened and flows together with the sealing resin layer 11 by a pressing force in the pressing step (fig. 2B) and is deformed to follow the outer shape of the chip 21. Thickening of the sealing resin layer 11 is suitable for suppressing a decrease in viscosity of the sealing resin layer 11 due to a temperature increase and suppressing excessive penetration of the sealing resin into the voids G in the curing step (fig. 2C).
The sealing resin sheet X may further include at least 1 other sealing resin layer between the sealing resin layers 11 and 12. Fig. 3 shows an example in which the sealing resin sheet X further includes a sealing resin layer 13 between the sealing resin layers 11 and 12. The sealing resin layer 13 is in direct contact with the sealing resin layers 11, 12. The sealing resin sheet X further includes a sealing resin layer between the sealing resin layers 11 and 12, and is preferable for suppressing the sealing resin layer 12 from flowing into the electronic component chip side in the pressing step.
The sealing resin layer 13 is a layer formed of the 3 rd thermosetting composition. The 3 rd thermosetting composition comprises a 3 rd thermosetting resin and a 3 rd inorganic filler material. That is, the sealing resin layer 13 contains the 3 rd thermosetting resin and the 3 rd inorganic filler. The sealing resin layer 13 is in a semi-cured state (B-stage state).
Examples of the 3 rd thermosetting resin include the 1 st thermosetting resin described above. The content ratio of the 3 rd thermosetting resin in the 3 rd thermosetting composition is preferably 3% by mass or more, and more preferably 3.5% by mass or more. The content ratio of the 3 rd thermosetting resin in the 3 rd thermosetting composition is preferably 30% by mass or less, and more preferably 25% by mass or less.
The 3 rd thermosetting resin preferably comprises an epoxy resin. Examples of the epoxy resin include the epoxy resins described above with respect to the 1 st thermosetting composition, and 2-functional epoxy resins are preferably used, and bisphenol a type epoxy resins and/or bisphenol F type epoxy resins are more preferably used. The preferred range of the epoxy equivalent of the epoxy resin in the 3 rd thermosetting composition is the same as the range described above as the preferred range of the epoxy equivalent of the epoxy resin in the 1 st thermosetting composition.
In the case where an epoxy resin is used as the 3 rd thermosetting resin, the 3 rd thermosetting resin preferably contains a phenol resin as a curing agent for the epoxy resin. Preferred examples of the phenol resin include a phenol novolac type phenol resin and a phenol triphenylmethane type resin. In the 3 rd thermosetting composition, the amount of hydroxyl groups in the phenol resin as a curing agent per 1 equivalent of the epoxy group of the epoxy resin is the same as the amount of hydroxyl groups in the phenol resin as a curing agent per 1 equivalent of the epoxy group of the epoxy resin as described above with respect to the 1 st thermosetting composition. In the 3 rd thermosetting composition, the amount of the phenol resin as the curing agent added to 100 parts by mass of the epoxy resin is the same as the amount of the phenol resin as the curing agent added to 100 parts by mass of the epoxy resin as described above with respect to the 1 st thermosetting composition.
The 3 rd thermosetting composition preferably comprises a curing accelerator. Examples of the curing accelerator include the curing accelerators described above for the 1 st thermosetting composition. The amount of the curing accelerator is, for example, 0.05 parts by mass or more and 5 parts by mass or less per 100 parts by mass of the 3 rd thermosetting resin.
Examples of the 3 rd inorganic filler include the 1 st inorganic filler (layered silicate compound, inorganic filler other than layered silicate compound) as described above with respect to the 1 st thermosetting composition.
The content ratio of the layer silicate compound in the 3 rd thermosetting composition (i.e., the content ratio of the layer silicate compound in the sealing resin layer 13) is preferably 1% by mass or more, more preferably 1.2% by mass or more, and still more preferably 1.4% by mass or more. Such a configuration is suitable for thickening the sealing resin layer 13, and the sealing resin layer 13 exhibits thixotropy that becomes less viscous when receiving a pressing force than when not receiving a pressing force. From the viewpoint of avoiding excessive thickening of the 3 rd thermosetting composition, the content ratio of the layer silicate compound in the 3 rd thermosetting composition is preferably 6% by mass or less, more preferably 5% by mass or less, and still more preferably 4% by mass or less.
As the inorganic filler other than the layer silicate compound in the 3 rd thermosetting composition, a silicon compound other than the layer silicate compound is preferably used, and silica is more preferably used. Examples of the shape of the inorganic filler include a substantially spherical shape, a substantially plate shape, a substantially needle shape, and an amorphous shape, and a substantially spherical shape is preferable. The average particle diameter of the inorganic filler other than the layer silicate compound is the same as the average particle diameter described above as the average particle diameter of the inorganic filler other than the layer silicate compound in the 1 st thermosetting composition.
The content ratio of the inorganic filler other than the layer silicate compound in the 3 rd thermosetting composition is preferably 73% by mass or more, more preferably 76% by mass or more, and still more preferably 78% by mass or more. Such a configuration is suitable for suppressing expansion and contraction due to a temperature change in the sealing resin layer 13. The content ratio is preferably 90% by mass or less, more preferably 85% by mass or less, and still more preferably 83% by mass or less. Such a configuration is suitable for avoiding excessive thickening of the 3 rd thermosetting composition and ensuring the fluidity of the sealing resin layer 13 in the pressing step.
The content ratio R3 of the 3 rd inorganic filler in the 3 rd thermosetting composition (sealing resin layer 13) is preferably 75% by mass or more, more preferably 78% by mass or more, and still more preferably 80% by mass or more. Such a constitution is preferable for suppressing expansion and contraction caused by temperature change in the sealing resin layer 13, and is preferable for achieving an average linear thermal expansion rate of 20 ppm/deg.c or less. The content ratio R3 is preferably 90% by mass or less, more preferably 87% by mass or less, and further preferably 85% by mass or less. Such a configuration is suitable for avoiding excessive thickening of the 3 rd thermosetting composition and ensuring the fluidity of the sealing resin layer 13 in the pressing step.
The proportion of the layer silicate compound in the 3 rd inorganic filler is preferably 0.5% by mass or more, more preferably 1% by mass or more, and still more preferably 1.5% by mass or more. The proportion is preferably 8% by mass or less, more preferably 7% by mass or less, and further preferably 6.5% by mass or less. These configurations are well suited to balance: suppression of expansion and contraction due to temperature change in the sealing resin layer 13, securing of fluidity in the pressing step, and exhibition of thixotropy.
The 3 rd thermosetting composition may comprise other ingredients as described above with respect to the 1 st thermosetting composition.
The sealing resin sheet X shown in fig. 3 is produced, for example, by forming the sealing resin layers 11, 12, and 13, respectively, and then sequentially bonding the sealing resin layer 11, the sealing resin layer 13, and the sealing resin layer 12. The sealing resin layer 13 can be formed by the same method as described above with respect to the sealing resin layers 11, 12.
The ratio of the thickness H1 of the sealing resin layer to the total thickness H3 of the sealing resin layers 13 in the entire thickness of the sealing resin sheet X is preferably 0.4 or more, more preferably 0.5 or more, and still more preferably 0.6 or more. Such a configuration is preferable for suppressing the sealing resin layer 12 from flowing into the electronic component chip side in the pressing step.
The ratio of the thickness H1 of the sealing resin layer to the total thickness H3 of the sealing resin layer 13 in the entire thickness of the sealing resin sheet X is 0.82 or less, preferably 0.8 or less. Such a configuration is suitable for filling the gaps between adjacent chips with the sealing resin while ensuring the overall fluidity of the sealing resin sheet X in the pressing step.
The minimum melt viscosity of the sealing resin layer 13 is preferably 120kPa · s or more, more preferably 150kPa · s or more, and further preferably 260kPa · s or less, more preferably 240kPa · s or less. Such a configuration is preferable for filling the gaps between the adjacent chips with the sealing resin while ensuring the overall fluidity of the sealing resin sheet X in the pressing step.
The sealing resin layer 13 has an average linear thermal expansion coefficient Z3 of 20 ppm/deg.c or less in a temperature range from-40 deg.c to the glass transition temperature after being cured by heating at 150 deg.c for 1 hour. Such a configuration is suitable for suppressing internal stress in the sealing resin layer 13 after being cured by heating at a high temperature, for example, being cooled to room temperature in the sealing resin sheet X.
[ examples ]
The present invention will be described in more detail below with reference to examples. The invention is not limited to the embodiments. In addition, specific numerical values such as the blending amount (content), the physical property value, and the parameter used in the following description may be replaced with upper limits (numerical values defined as "lower" or "less than") or lower limits (numerical values defined as "upper" or "more than") described in the above "embodiment" in relation to the blending amount (content), the physical property value, the parameter, and the like corresponding thereto.
[ production examples 1 to 8]
The resin films of production examples 1 to 8 for forming a sealing resin layer were produced as follows. First, compositions (varnishes) were prepared by mixing the respective components in the formulations shown in table 1 (in table 1, the units of the respective numerical values representing the compositions are relative "parts by mass"). Next, the composition was applied to a polyethylene terephthalate film (PET film) whose surface was subjected to a silicone release treatment, to form a coating film. Subsequently, the coating film was dried by heating at 120 ℃ for 2 minutes, and a resin film having a thickness of 50 μm (the resin film was in a B-stage state) was formed on the PET film. The resin film of production example 2 was also produced as a resin film having a thickness of 40 μm, and the resin film of production example 5 was also produced as a resin film having a thickness of 40 μm and a resin film having a thickness of 20 μm.
[ Table 1]
The components used in preparation examples 1 to 8 are as follows.
Epoxy resin E1: "EPICLON EXA-4850-150" (bisphenol A epoxy resin, molecular weight 900, epoxy equivalent 450g/eq, liquid at room temperature) manufactured by DIC corporation
Epoxy resin E2: "YSLV-80XY" (bisphenol F type epoxy resin, high molecular weight epoxy resin, epoxy equivalent 191g/eq, solid at room temperature, softening point 80 ℃ C.) manufactured by Nippon Feishiki chemical Co., ltd
Epoxy resin E3: "EPPN-501HY" (polyfunctional epoxy resin, epoxy equivalent 169g/eq, solid at room temperature, softening point 60 ℃ C.) manufactured by Nippon chemical Co., ltd.)
Phenol resin F1: "LVR-8210DL" (novolak-type phenol resin, latent curing agent, hydroxyl group equivalent 104g/eq, solid at room temperature, softening point 60 ℃ C.) manufactured by Rong chemical Co., ltd
Phenol resin F2: MEHC-7851SS (phenol aralkyl resin, latent curing agent, hydroxyl group equivalent 201-220 g/eq, solid at room temperature, softening point 64-85 ℃ C.) manufactured by MINGHE CHEMICAL CORPORATION
Phenol resin F3: "TPM-100" (triphenylmethane type phenol resin, latent curing agent, hydroxyl group equivalent 98g/eq, solid at room temperature, softening point 108.2 ℃ C.) manufactured by Rong chemical Co., ltd
Acrylic resin (acrylic polymer): "HME-2006M" manufactured by Industrial Co. "HME-2006M" (a methyl ethyl ketone solution of carboxyl group-containing acrylic resin, having an acid value of 32mgKOH/g, a weight-average molecular weight of 129 ten thousand, a glass transition temperature (Tg) -13.9 ℃ and a solid content concentration of 20 mass%)
Silane coupling agent: KBM-403 (3-glycidoxypropyltrimethoxysilane) manufactured by shin-Etsu chemical Co., ltd
Layered silicate compound: "S-BEN NX" (organized bentonite modified with dimethyl distearyl ammonium) manufactured by HOJUN corporation
1 st silica particle: "FB-8SM" (spherical silica particles, average particle diameter 7.0 μm, non-surface treated) manufactured by DENKA K.K.)
Silica particles of 2 nd: "SC220G-SMJ" (spherical silica particles having an average particle diameter of 0.5 μm) manufactured by Admacechs corporation was surface-treated with 3-methacryloxypropyltrimethoxysilane ("KBM-503" manufactured by shin-Etsu chemical Co., ltd.) (the silane coupling agent used for the surface treatment was 1 part by mass per 100 parts by mass of the silica particles)
Curing accelerator: "2PHZ-PW" (2-phenyl-4,5-dihydroxymethylimidazole) manufactured by four national chemical industries Ltd
Pigment: carbon black: mitsubishi chemical corporation, #20, average particle diameter 50nm
Solvent: methyl ethyl ketone
[ examples 1 to 9 and comparative examples 1 to 5]
The sealing resin sheets of examples 1 to 9 and comparative examples 1 to 5 were produced. Specifically, the following is described.
In the production of the sealing resin sheet of example 1, 2 resin films (thickness 50 μm) of production example 1 were laminated to form a 1 st sealing resin layer (thickness 100 μm), 3 resin films (thickness 50 μm) of production example 5 were laminated to form a 2 nd sealing resin layer (thickness 150 μm), and these 1 st and 2 nd sealing resin layers were laminated. The bonding temperature was 80 ℃ (the same applies to bonding described later).
In the production of the sealing resin sheet of example 2, 3 resin films (thickness 50 μm) of production example 1 were laminated to form a 1 st sealing resin layer (thickness 150 μm), 2 resin films (thickness 50 μm) of production example 5 were laminated to form a 2 nd sealing resin layer (thickness 100 μm), and these 1 st and 2 nd sealing resin layers were laminated.
In the production of the sealing resin sheet of example 3, 4 sheets of the resin film (thickness 50 μm) of production example 1 were bonded to form a 1 st sealing resin layer (thickness 200 μm), the resin film (thickness 50 μm) of production example 5 was prepared as a 2 nd sealing resin layer, and these 1 st and 2 nd sealing resin layers were bonded.
In the production of the sealing resin sheet of example 4, 2 resin films (thickness 50 μm) of production example 2 were laminated to form a 1 st sealing resin layer (thickness 100 μm), 3 resin films (thickness 50 μm) of production example 5 were laminated to form a 2 nd sealing resin layer (thickness 150 μm), and these 1 st and 2 nd sealing resin layers were laminated.
In the production of the sealing resin sheet of example 5, 3 resin films (thickness 50 μm) of production example 2 were laminated to form a 1 st sealing resin layer (thickness 150 μm), 2 resin films (thickness 50 μm) of production example 5 were laminated to form a 2 nd sealing resin layer (thickness 100 μm), and these 1 st and 2 nd sealing resin layers were laminated.
In the production of the sealing resin sheet of example 6, 4 resin films (thickness 50 μm) of production example 2 were laminated to form a 1 st sealing resin layer (thickness 200 μm), the resin film (thickness 50 μm) of production example 5 was prepared as a 2 nd sealing resin layer, and these 1 st and 2 nd sealing resin layers were laminated.
In the production of the sealing resin sheet of example 7, 2 resin films (thickness 40 μm) of production example 2 were laminated to form a 1 st sealing resin layer (thickness 80 μm), 3 resin films (thickness 40 μm) of production example 5 were laminated to form a 2 nd sealing resin layer (thickness 120 μm), and these 1 st and 2 nd sealing resin layers were laminated.
In the production of the sealing resin sheet of example 8, 3 resin films (thickness 50 μm) of production example 2 were laminated to form a 1 st sealing resin layer (thickness 150 μm), 2 resin films (thickness 50 μm) of production example 8 were laminated to form a 2 nd sealing resin layer (thickness 100 μm), and these 1 st and 2 nd sealing resin layers were laminated.
In the production of the sealing resin sheet of example 9, 2 sheets of the resin film (thickness 50 μm) of production example 2 were bonded to form a 1 st sealing resin layer (thickness 100 μm), the resin film (thickness 50 μm) of production example 1 was prepared as a 3 rd sealing resin layer, the resin film (thickness 50 μm) 2 sheets of production example 5 were bonded to form a 2 nd sealing resin layer (thickness 100 μm), and the 1 st, 3 rd, and 2 nd sealing resin layers were sequentially bonded.
In the production of the sealing resin sheet of comparative example 1, 2 resin films (thickness 50 μm) of production example 1 were laminated to form a 1 st sealing resin layer (thickness 100 μm), and the resin film (thickness 20 μm) of production example 5 was prepared as a 2 nd sealing resin layer, and these 1 st and 2 nd sealing resin layers were laminated.
In the production of the sealing resin sheet of comparative example 2, 2 resin films (thickness 40 μm) of production example 2 were laminated to form a 1 st sealing resin layer (thickness 80 μm), 4 resin films (thickness 50 μm) of production example 5 were laminated to form a 2 nd sealing resin layer (thickness 200 μm), and these 1 st and 2 nd sealing resin layers were laminated.
In the production of the sealing resin sheet of comparative example 3, 2 resin films (thickness 50 μm) of production example 3 were laminated to form a 1 st sealing resin layer (thickness 100 μm), 3 resin films (thickness 50 μm) of production example 6 were laminated to form a 2 nd sealing resin layer (thickness 150 μm), and these 1 st and 2 nd sealing resin layers were laminated.
In the production of the sealing resin sheet of comparative example 4, 2 resin films (thickness 50 μm) of production example 4 were laminated to form a 1 st sealing resin layer (thickness 100 μm), 3 resin films (thickness 50 μm) of production example 6 were laminated to form a 2 nd sealing resin layer (thickness 150 μm), and these 1 st and 2 nd sealing resin layers were laminated.
In the production of the sealing resin sheet of comparative example 5, 2 resin films (thickness 50 μm) of production example 3 were laminated to form a 1 st sealing resin layer (thickness 100 μm), 3 resin films (thickness 50 μm) of production example 7 were laminated to form a 2 nd sealing resin layer (thickness 150 μm), and these 1 st and 2 nd sealing resin layers were laminated.
Minimum melt viscosity
The lowest melt viscosity of the 1 st sealing resin layer of each of the sealing resin sheets of examples 1 to 9 and comparative examples 1 to 5 was measured as follows.
First, the resin film (thickness: 50 μm) 20 forming the 1 st sealing resin layer was bonded to each of the sealing resin sheets of examples 1 to 9 and comparative examples 1 to 5 to prepare a sample film (thickness: 1 mm) for measurement. Subsequently, the viscoelasticity of the sample film was measured. In this measurement, a rheometer (trade name "HAAKE MARS III", manufactured by Thermo Fisher Scientific) was used, and a sample film was sandwiched between a hot plate for heating and a parallel plate (diameter 8 mm) arranged parallel to the hot plate in this apparatus, so that the gap between the plates was 0.8mm. Then, the viscosity of the sample film was measured under the conditions of a frequency of 1Hz, a strain value of 0.005%, a temperature range of 50 ℃ to 90 ℃ and a temperature rise rate of 30 ℃/min. The viscosity at the temperature at which the lowest viscosity is exhibited in the measurement temperature range is shown in tables 2 to 4 as the lowest melt viscosity (kPa · s).
Mean linear thermal expansion coefficient
The average linear thermal expansion coefficient after curing was examined for each sealing resin layer of each sealing resin sheet of examples 1 to 9 and comparative examples 1 to 5.
First, a sheet (width 4.5 mm. Times. Length 16 mm) was cut out from the sealing resin sheet. Next, the sheet piece was cured by heating it at 150 ℃ for 1 hour. Next, the cured sealing resin layer other than the cured sealing resin layer (1 st sealing resin layer, 2 nd sealing resin layer, or 3 rd sealing resin layer) to be measured for thermal expansion coefficient is removed from the cured sheet piece by mechanical polishing so as to remain. A grinder (product name "EcoMet250", manufactured by BUEHLER) was used for mechanical grinding. Next, the linear thermal expansion coefficient of the cured sealing resin layer prepared in this manner was measured by a thermomechanical analyzer (TMA) under the following conditions (TMA measurement). Based on the measurement results, the glass transition temperature and the average linear thermal expansion coefficient in the temperature range from-40 ℃ to the glass transition temperature were determined for the cured sealing resin layer. The average linear thermal expansion coefficients Z1, Z2, and Z3 (ppm/° c) of the 1 st to 3 rd sealing resin layers after curing are shown in tables 2 to 4.
(measurement conditions)
Thermomechanical analyzer (TMA): q400 TMA manufactured by TA Instruments Japan
Mode (2): stretching mode
Temperature rise rate: 1 deg.C/min
Modulation: 5.000 deg.C/300 seconds
Measurement temperature range: -40 ℃ to 260 DEG C
Evaluation of entry Length
The hollow sealability of the sealing resin sheets of examples 1 to 9 and comparative examples 1 to 5 was examined. Specifically, the following is described.
First, as shown in fig. 4A, a sample sheet X' (10 mm in length × 10mm in width) was prepared from the sealing resin sheets of examples and comparative examples. The sample sheet X' cut out from the sealing resin sheets of examples 1 to 8 and comparative examples 1 to 5 was provided with the 1 st sealing resin layer 11 and the 2 nd sealing resin layer 12 in this order in the thickness direction. A sample sheet X' cut out from the sealing resin sheet of example 9 includes a 1 st sealing resin layer 11, a 3 rd sealing resin layer (not shown), and a 2 nd sealing resin layer 12 in this order in the thickness direction.
On the other hand, a dummy chip mounting board is prepared as the workpiece W. The dummy chip mounting substrate includes a glass substrate S and a plurality of dummy chips 21' (3 mm × 3mm × 250 μm in thickness). The dummy chip 21' is bonded to the substrate S via the bump electrode 22 in a state of facing the substrate S with the gap G therebetween. The mounting height of the dummy chip 21' is 300 μm. The mounting interval of the dummy chips 21' is 300 μm. The length from the substrate S to the dummy chip 21 'in the gap G (separation distance between the substrate S and the dummy chip 21') is 50 μm.
Next, as shown in fig. 4B, the work W and the sample piece X' are disposed between the 1 st pressing plate P1 and the 2 nd pressing plate P2 of the flat press.
Next, as shown in fig. 4C, the dummy chip 21 'on the substrate S is sealed by vacuum plate pressing with the sample sheet X' under sealing conditions of a temperature of 70 ℃, a degree of vacuum of 1.6kPa or less, a pressing pressure of 0.1MPa, and a pressing time of 40 seconds (pressing step).
Next, as shown in fig. 4D, the sample piece X' is cured by heating it at 150 ℃ under atmospheric pressure for 1 hour.
Then, as shown in the enlarged view of fig. 4D, the length of the gap G between the dummy chip 21' and the substrate S, which is a length of the sealing resin derived from the sample sheet X ' (a part of the 1 st sealing resin layer 11) entering from the side surface 21b, is measured as an entering length L (μm) with reference to the side surface 21b of the dummy chip 21 '. The results are shown in tables 2 to 4. The negative penetration length L means that a space (see thick dotted line in fig. 4D) is formed so as to protrude outward from the side surface 21b of the dummy chip 21'. The absolute value of the negative value corresponds to the protrusion length of the space.
According to the sealing resin sheets of examples 1 to 9, the penetration length L is 0 μm or more and 50 μm or less, and the dummy chip 21' can be appropriately sealed in the hollow state.
In contrast, in the sealing resin sheet of comparative example 1, the space between the dummy chips 21' cannot be sufficiently filled in the pressing step (fig. 4C). Specifically, in the region between the dummy chips 21', a gap (void) is formed between the substrate S and the sealing resin sheet X'. In the sealing resin sheet of comparative example 2, the first sealing resin layer 11 was broken in the pressing step. Therefore, a part of the 2 nd sealing resin layer 12 flows into the dummy chip 21 'side through the broken portion of the 1 st sealing resin layer 11, and the inflow resin flows between the dummy chip 21' and the 1 st sealing resin layer 11 to reach the gap G and excessively enters the gap G. In the sealing resin sheets of comparative examples 3 and 5, the 1 st sealing resin layer 11 was excessively inserted into the gap G between the substrate S and the dummy chip 21' in the pressing step. The sealing resin sheet of comparative example 4 had poor fluidity in the pressing step, and as a result, the gap G could not be sealed properly (the penetration length L was negative).
[ Table 2]
[ Table 3]
TABLE 3
[ Table 4]
Claims (9)
1. A sealing resin sheet comprising a 1 st sealing resin layer and a 2 nd sealing resin layer in this order in the thickness direction,
the 1 st sealing resin layer contains a 1 st thermosetting resin and a 1 st inorganic filler material, and has an average linear thermal expansion rate of 20 ppm/DEG C or less in a temperature range from-40 ℃ to a glass transition temperature after curing,
the 2 nd sealing resin layer contains a 2 nd thermosetting resin and a 2 nd inorganic filler material, and has an average linear thermal expansion rate of 20 ppm/DEG C or less in a temperature range from-40 ℃ to a glass transition temperature after curing,
the content ratio of the 1 st inorganic filler in the 1 st sealing resin layer is different from the content ratio of the 2 nd inorganic filler in the 2 nd sealing resin layer,
the ratio of the thickness of the 1 st sealing resin layer to the total thickness of the sealing resin sheet is 0.37 or more and 0.82 or less.
2. The sealing resin sheet according to claim 1, wherein the 1 st sealing resin layer has a thickness of 90 μm or more.
3. The sealing resin sheet according to claim 1, wherein the 1 st sealing resin layer has a lowest melt viscosity of 120kPa · s or more.
4. The sealing resin sheet according to claim 1, wherein the 1 st sealing resin layer has a minimum melt viscosity of 260 kPa-s or less.
5. The sealing resin sheet according to claim 1, further comprising a 3 rd sealing resin layer between the 1 st sealing resin layer and the 2 nd sealing resin layer,
the 3 rd sealing resin layer includes a 3 rd thermosetting resin and a 3 rd inorganic filler material, and has an average linear thermal expansion rate of 20 ppm/DEG C or less in a temperature range from-40 ℃ to a glass transition temperature after curing.
6. The sealing resin sheet according to claim 5, wherein the 3 rd sealing resin layer and the 1 st sealing resin layer are in direct contact, and a ratio of a total thickness of the 1 st sealing resin layer and the 3 rd sealing resin layer in an entire thickness of the sealing resin sheet is 0.4 or more and 0.82 or less.
7. The sealing resin sheet according to any one of claims 1 to 6, wherein the content ratio of the inorganic filler in each sealing resin layer is 75% by mass or more.
8. The sealing resin sheet according to any one of claims 1 to 6, wherein the content ratio of the inorganic filler in each sealing resin layer is 90% by mass or less.
9. An electronic component device, comprising:
a base material,
An electronic component chip mounted on the base material in a state of facing the base material with a gap therebetween, and
a cured resin portion formed from the sealing resin sheet according to any one of claims 1 to 8 and sealing the electronic component chip and the void.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021086286A JP2022179054A (en) | 2021-05-21 | 2021-05-21 | Resin sheet for sealing |
| JP2021-086286 | 2021-05-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115377016A true CN115377016A (en) | 2022-11-22 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210529457.6A Pending CN115377016A (en) | 2021-05-21 | 2022-05-16 | Sealing resin sheet and electronic component device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2022179054A (en) |
| KR (1) | KR20220157884A (en) |
| CN (1) | CN115377016A (en) |
| TW (1) | TW202311485A (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6393092B2 (en) | 2013-08-07 | 2018-09-19 | 日東電工株式会社 | Hollow type electronic device sealing resin sheet and method for producing hollow type electronic device package |
-
2021
- 2021-05-21 JP JP2021086286A patent/JP2022179054A/en active Pending
-
2022
- 2022-05-12 KR KR1020220058099A patent/KR20220157884A/en unknown
- 2022-05-16 CN CN202210529457.6A patent/CN115377016A/en active Pending
- 2022-05-17 TW TW111118331A patent/TW202311485A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JP2022179054A (en) | 2022-12-02 |
| KR20220157884A (en) | 2022-11-29 |
| TW202311485A (en) | 2023-03-16 |
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