CN115461188A - 用于高温应用的具有混合焊料粉末的无铅焊膏 - Google Patents

用于高温应用的具有混合焊料粉末的无铅焊膏 Download PDF

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CN115461188A
CN115461188A CN202180031228.5A CN202180031228A CN115461188A CN 115461188 A CN115461188 A CN 115461188A CN 202180031228 A CN202180031228 A CN 202180031228A CN 115461188 A CN115461188 A CN 115461188A
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solder
alloy powder
solder alloy
solder paste
paste
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张宏闻
S·利特韦内克
王华光
耿杰
F·M·穆图库
李宁成
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Indium Corp
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Indium Corp
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    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262—Sn as the principal constituent
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    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
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    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
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    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
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    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
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    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
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Abstract

本公开内容的一些实施涉及具有混合焊料粉末的无铅焊膏，其特别适用于涉及多板级回流操作的高温焊接应用。在一个实施中，焊膏由以下组成：10wt％至90wt％的第一焊料合金粉末，该第一焊料合金粉末由Sn:Sb的wt％比为0.75至1.1的SnSbCuAg焊料合金组成；10wt％至90wt％的第二焊料合金粉末，该第二焊料合金粉末由包括至少80wt％的Sn的Sn焊料合金组成；以及余量的助焊剂。

Description

用于高温应用的具有混合焊料粉末的无铅焊膏
相关申请的交叉引用
本申请要求2020年4月29日提交的名称为“用于高温应用的具有混合焊料粉末的无铅焊膏”的美国临时专利申请号63/017,469的权益，其通过引用以其整体并入本文。
技术领域
本公开内容涉及无铅焊膏。
背景技术
通过处置电子组件产生的铅(Pb)被认为对环境和人类健康有害。法规越来越多地禁止在电子互连和电子封装工业中使用铅基焊料。2006年7月1日颁布的危害物质限制(RoHS)指令(The Restriction of Hazardous Substances Directed(RoHS)directive)已成功地导致将SnPb焊料合金替换为无铅焊料合金。基于SnAg、SnCu和SnAgCu(SAC)的焊料已成为半导体和电子工业中形成互连的常用焊料。然而，开发高熔化温度无铅焊料以替换常规的高铅焊料(例如，Pb-5Sn和Pb-5Sn-2.5Ag)仍处于早期阶段。
高熔化温度焊料的常见用途是半导体表面安装装置/部件的芯片(die)附接，其中芯片将被结合在引线之间或引线框架上。然后，这些表面安装部件/装置被用于一个或多个后续的板级焊接工艺。例如，使用高熔化温度焊料将硅芯片焊接到引线框架上以形成组件。随后，通过板级回流，将装置(封装或未封装)附接到印刷线路板(PWB)上。同一板可能会暴露于多次回流。在整个工艺期间，硅芯片和引线框架之间的内部连接应保持良好。这要求高熔化温度焊料能够抵抗多次回流焊接工艺，而不会导致任何功能失效。
瞬态液相结合(TLPB)技术旨在通过在低熔化温度合金和高熔化温度合金之间形成金属间化合物(IMC)，实现焊接接头的更高重熔温度。在TLPB设计中，低熔化相在回流期间大部分或甚至完全消耗，以达到高熔化温度目标。在回流期间，高熔化合金表面上的界面IMC形成和持续的IMC生长以低熔化合金和高熔化合金二者为代价。
发明内容
本公开内容的一些实施涉及一种含有混合焊料粉末的无铅焊膏，该无铅焊膏特别适用于涉及多板级回流操作的高温焊接应用。
在一个实施方式中，焊膏由以下组成：10wt％至90wt％的第一焊料合金粉末，该第一焊料合金粉末由Sn:Sb的wt％比为0.75至1.1的SnSbCuAg焊料合金组成；10wt％至90wt％的第二焊料合金粉末，该第二焊料合金由包含至少80wt％的Sn的Sn焊料合金组成；以及余量的助焊剂。
在一些实施中，焊膏由50wt％至90wt％的第一焊料合金粉末、10wt％至50wt％的第二焊料合金粉末，以及余量的助焊剂组成。在一些实施中，焊膏由75wt％至90wt％的第一焊料合金粉末、10wt％至25wt％的第二焊料合金粉末，以及余量的助焊剂组成。
在一些实施中，焊膏由小于50wt％的第一焊料合金粉末、大于50wt％的第二焊料合金粉末，以及余量的助焊剂组成。
在一些实施中，第一焊料合金粉末的固相线温度为300℃至360℃，并且其中第二焊料合金粉末的固相线温度为200℃至250℃。在一些实施中，第二焊料合金粉末的固相线温度为215℃至245℃。在一些实施中，第一焊料合金粉末的液相线温度不大于360℃。在一些实施中，第二焊料合金粉末的液相线温度不大于250℃。在一些实施中，第二焊料合金粉末的液相线温度不大于245℃。
在一些实施中，第一焊料合金粉末由以下组成：4wt％至10wt％的Cu；4wt％至20wt％的Ag；任选地，0.5wt％或更少的Bi、Co、In、Ge、Ni、P或Zn；以及余量的比为0.75至1.1的Sn和Sb。
在一些实施中，第二焊料合金粉末为SnAg、SnCu、SnAgCu、SnSb、SnAgCuSb、SnAgY(Y＝Bi、Co、Ge、In、Ni、P、Sb或Zn)、SnCuY(Y＝Bi、Co、Ge、In、Ni、P、Sb或Zn)、SnAgCuY(Y＝Bi、Co、Ge、In、Ni、P、Sb或Zn)或SnAgCuSbY(Y＝Bi、Co、Ge、In、Ni、P、Sb或Zn)。
在一些实施中，第二焊料合金粉末包括0.1至4wt％的Ag、0.1至1wt％的Cu或0.1至11wt％的Sb。在一些实施中，第二焊料合金粉末包含0.1至4wt％的Ag、0.1至1wt％的Cu、和0.1至11wt％的Sb。
在一些实施中，第二焊料合金粉末掺杂有Bi、Co、Ge、In、Ni、P、Sb或Zn。
在一些实施中，焊膏的第一熔化峰的热吸收与焊膏的第二熔化峰的热吸收的比为0.15或更小。
在一个实施方式中，方法包括：在基板和装置之间施加焊膏以形成组件，其中焊膏由以下组成：10wt％至90wt％的第一焊料合金粉末，该第一焊料合金粉末由Sn:Sb的wt％比率为0.75至1.1的SnSbCuAg焊料合金组成；10wt％至90wt％的第二焊料合金粉末，该第二焊料合金粉末由包括至少80wt％的Sn的Sn焊料合金组成；以及余量的助焊剂；在高于320℃的峰值温度下对组件进行第一回流焊接工艺，以从焊膏形成焊接接头；并且在形成焊接接头后，在230℃至270℃的峰值温度下对组件进行第二回流焊接工艺。在一些实施中，装置是硅芯片，基板包括Cu引线框架，并且焊膏被施加在Cu引线框架和硅芯片之间。在一些实施中，焊接接头在第二回流焊接工艺期间保持大于或等于10MPa的结合剪切强度。
在一个实施方式中，焊接接头通过以下工艺形成：在基板和装置之间施加焊膏以形成组件；并回流焊接组件以形成焊接接头；其中焊膏由以下组成：10wt％至90wt％的第一焊料合金粉末，该第一焊料合金粉末由Sn:Sb的wt％比为0.75至1.1的SnSbCuAg焊料合金组成；10wt％至90wt％的第二焊料合金粉末，该第二焊料合金由包括至少80％的Sn的Sn焊料合金组成，以及余量的助焊剂。
本公开内容的其他特征和方面将结合附图从以下具体实施方式中变得显而易见，附图以举例的方式示出了根据各种实施方式的特征。本发明内容不旨在限制本发明的范围，本发明的范围仅由本文所附权利要求书限定。
附图说明
根据一个或多个不同实施方式，本文所公开的技术将参考所包括的附图进行详细描述。提供附图仅用于说明的目的，并且仅描绘实例实施。
图1是显示几种无铅结合材料和高铅焊料的作为温度的函数的结合剪切强度(MPa)的图表。
图2描绘了SnSb的相图。
图3为五种不同焊膏在不同测试温度(℃)下的结合剪切强度(MPa)的图表。
图4显示了对于图3所描绘的五种焊膏用TA Q2000 DSC进行的差示扫描量热仪(DSC)加热曲线。
这些图并非旨在穷举或将本发明限制为所公开的精确形式。应当理解，本发明可以通过修改和改变来实施，并且所公开的技术仅受权利要求及其等同物的限制。
具体实施方式
为了与电子工业中使用的焊料回流曲线相容，高温焊料的一些重要特性可以包括：(i)约260℃及以上的固相线温度(根据典型的SMT焊料回流曲线)，(ii)良好的热疲劳抗性，(iii)高热/电导率，和/或(iv)低成本。迄今为止，高铅含量的焊料仍然主导着功率分立市场中的芯片附接应用。
本公开内容的实施涉及具有混合焊料粉末的无铅焊膏，其特别适用于涉及多板级回流操作的高温焊接应用。焊膏包括两种焊料粉末和助焊剂。焊料粉末中的一种具有比另一种焊料粉末明显更高的熔化温度。例如，焊料粉末中的一种可具有300至360℃的第一焊料合金的固相线温度，而焊料粉末中的另一种可具有200至250℃的第二焊料合金的固相线温度。较高固相线温度(较高温)焊料粉末是Sn:Sb重量比在约0.75和1.1之间的SnSb基焊料合金。较低固相线(较低温)焊料粉末是富Sn焊料或焊料合金，其中Sn含量大于80重量％。
较高温焊料粉末占焊膏的50wt％至90wt％，较低温焊料粉末占焊膏的10wt％至50wt％，并且助焊剂占焊膏的9wt％至20wt％。如下文进一步所述，由于该组合物，较高温焊料粉末可支配最终结合接头的高温性能，包括熔化和热机械行为。延展性富Sn焊料粉末可改善回流期间的润湿性，并增强最终接头的延展性。此外，焊膏内富Sn焊料的存在可允许相对较低的回流温度。
根据本公开内容的一些实施，下文将进一步描述，可以进行焊膏中的较低温焊料粉末和较高熔化温度焊料粉末的选择以满足以下性质中的一种或多种：(1)在回流工艺期间，焊料粉末完全或部分地相互溶解；(2)在回流焊接后，最终接头中剩余的低熔化相在数量上得到优化，并由高熔化SnSb基体隔离，以在270℃以上的温度下保持所需的接头机械性能；以及(3)对于典型的芯片附接应用，焊接接头能够经受住温度循环测试。实际上，在回流期间，两种焊料合金粉末可完全或部分地相互溶解。这允许高温焊料合金粉末连续溶解到液体溶液中，并且在粉末表面上没有界面IMC形成以减缓溶解。在设计中，可以优化较低温合金粉末和较高温合金粉末的比，以允许较高温合金粉末支配最终接头的高温性能，同时将低熔化相隔离在高熔化相基体内。
本文所述的焊膏可用于各种高温焊接应用，包括芯片附接和部件装置的表面安装。
图1是显示由几种无铅结合材料和高铅焊料形成的接头的作为温度的函数的结合剪切强度(兆帕(MPa))的图表。如所描绘，大部分无铅焊料比高铅焊料具有更高的结合剪切强度。当接近焊料的熔化温度(SnAgCu为约217℃，Sn10Sb为约243℃)时，富Sn焊料的结合剪切强度显著下降。在达到熔化温度后，富Sn焊料的结合剪切强度下降到接近零，因为它们变为熔融的。因此，由于富Sn焊料的较低的熔化温度，它们可能无法在高熔化温度下保持任何结合剪切强度。相比之下，在250℃时高铅焊料具有约10Mpa的结合剪切强度，而在较高温度下，结合剪切强度甚至下降更低。使用高铅焊料作为芯片附接材料的表面安装装置已被证明能够在高达260℃的峰值温度下经受随后的SMT回流。因此，本文所述的新型焊膏被设计为即使在270℃或更高的温度下也能保持10MPa以上的结合剪切强度，优于高铅焊膏对照，以经受随后的SMT工艺。
Sn:Sb的wt％比为约0.75至1.1的SnSbCuAgX(X＝Bi、Co、Ge、In、Ni、P、Zn或一些其他掺杂剂)合金，是一组固相线/液相线温度范围为约300℃至360℃的高温焊料合金。如图1所描绘，SnSbCuAgX合金能够在高达约280℃的温度下很好地保持高温结合剪切强度。然而，SnSbCuAgX合金是刚性和脆性的。对于Cu上Si芯片附接测试，SnSbCuAgX焊料将导致Si芯片在温度循环测试期间断裂，或者甚至就在回流后断裂，因为它们太硬，而无法承受由Si和Cu之间的热膨胀系数(CTE)失配引起的应变。因此，SnSbCuAgX焊料合金本身不适用于芯片附接应用中的芯片附接。
尽管SnSbScuAgX焊料合金和富Sn焊料合金可能不适合单独用于高温焊接应用，但如果两种焊料合金的优点可以组合在一起，同时最小化或消除各自的缺点，则这种组合可以成为铅基焊料合金合适的无铅替代品。根据本公开内容，两种焊料合金的优点可通过形成焊膏来实现，该焊膏是富Sn焊料合金粉末、SnSbCuAgX焊料合金粉末和助焊剂的组合。
本文描述的焊膏可以回流以形成焊接接头。回流的焊接接头可以证明两种焊料合金的优点：富Sn合金的延展性和SnSbCuAgX焊料合金的高温性能。为了实现这些优点，可选择富Sn粉末与SnSbCuAgX粉末的比，使得最终接头表现出：(1)在270℃或甚至更高温度下良好的机械强度(>10MPa)；(2)以及良好的延展性，以适应由Si芯片和Cu之间的CTE失配引起的应变。为了实现这些优点，焊接接头可形成为低温焊料合金的富Sn相嵌入高温焊料合金的SnSb基体中的形态，类似于复合材料。隔离在SnSb基体内的富Sn相可不会显著影响焊接接头的高温强度，因为焊接接头的大部分是SnSb基体和增强的含Cu和含Ag颗粒。同时，延展性富Sn相可容易地通过蠕变变形，以适应至少部分地由Si芯片和Cu引线框架之间的CTE失配引起的应变。
如上所述，焊膏中大部分(>50wt％)的较高温焊料合金可在约270℃及以上的温度下主导高熔化温度性能。为了实现这一优点，较高温焊料合金中Sn和Sb之间的比可保持在约0.75至1.1，其中形成Sn3Sb2金属间化合物和SnSb固溶体(β)，且具有约323℃至360℃之间的熔化温度。这由图2的SnSb相图所描绘。为了提高延展性，将Cu和Ag合金化到SnSb合金中，使得Ag3Sn和Cu6Sn5颗粒与Sn3Sb2颗粒一起沉淀在SnSb基体内部，以减缓位错移动和随后的裂纹成核和生长。然而，根据添加的Cu和Ag的量，焊料合金的固相线温度可根据含量保持在大约300℃。因此，在一些实施中，优选的是，高熔化温度焊料合金具有约4wt％至10wt％的Cu和约4wt％至20wt％的Ag。
以下表1显示了根据本公开内容的实施，可用于较高温焊料合金的SnSbCuAg合金的实例。在一些实施中，可向SnSbCuAg焊料合金中添加小于0.5％的掺杂剂，诸如Bi、Co、In、Ge、Ni、P或Zn，以稳定沉淀和界面IMC。
表1
# Sn(wt％) Sb(wt％) Cu(wt％) Ag(wt％)
1 38 38 7 17
2 38 38 10 14
3 38 42 5 15
4 38 42 8 12
5 39 41 5 15
6 39 41 8 12
7 39 41 10 10
8 40 40 5 15
9 40 40 8 12
10 40 41 5 14
11 40 41 8 11
12 41 39 8 12
13 41 39 10 10
14 41 41 5 13
15 41 41 8 10
16 42 42 6 12
17 42 42 5 13
18 42 43 5 10
19 42 43 8 7
20 43 42 5 10
21 43 43 5 9
22 43 43 8 6
23 44 42 5 9
24 44 42 8 6
25 44 43 5 8
26 44 44 5 7
27 44 44 8 4
如上所讨论，较低熔化温度焊料合金可以是富Sn焊料合金(Sn>80wt％)。例如，该合金可以是SnAg、SnCu、SnAgCu、SnSb、SnAgY(Y＝Bi、Co、Ge、In、Ni、P、Sb或一些其他掺杂剂)、SnCuY(Y＝Bi、Co、Ge、In、Ni、P、Sb或一些其他掺杂剂)、或SnAgCuY(Y＝Bi、Co、Ge、In、Ni、P、Sb、Zn或一些其他掺杂剂)。较低温焊料合金的固相线温度可在约200℃至250℃的范围内。以下表2显示了根据本公开内容的可用于较低温焊料合金的富Sn合金的实例。在一些实施中，可在焊料合金中包括Bi、In和/或Ni的添加剂，以增强其延展性或改善润湿性能。
表2
Figure BDA0003910963560000061
在一些实施中，较高温焊料粉末可占焊膏的10wt％至90wt％，并且较低温焊料粉末占焊膏的10wt％至90wt％。为了保持最终焊接接头的高温性能和延展性，可以调整第一焊料合金和第二焊料合金的比。如果第一焊料合金相对于第二焊料合金的wt％不足，则最终焊接接头可能无法保持高温性能。另一方面，如果第一焊料合金相对于第二焊料合金的wt％十分充足，则焊接接头可能太硬，并导致对Si芯片的损坏。因此，可选择焊膏中第一焊料合金和第二焊料合金的相对比，使得可以满足高温性能和足够的延展性。为此，在一些实施中，较高温焊料粉末可更优选地占焊膏的50wt％至90wt％，并且较低温焊料粉末可占焊膏的10wt％到50wt％。在一些实施中，较高温焊料粉末可更优选地占焊膏的75wt％至90wt％，并且较低温焊料粉末可占焊膏的10wt％到25wt％。在一些实施中，较低温焊料粉末可占焊膏的大于50wt％。焊膏的这种实施可特别适用于不一定需要高温强度的功率模块应用。
表3显示了根据本公开内容的焊膏的焊料合金元素组成(以wt％计)和回流焊接的接头焊料元素组成(以wt％计)。焊膏可用于HTLF(高温无铅)芯片附接应用或其他合适的高温焊接应用。如这些实施例所描绘，第一焊料合金与第二焊料合金的比可在约9:1至5:5的范围内。
表3
Figure BDA0003910963560000062
Figure BDA0003910963560000071
在涉及在功率分立装置/应用中使用焊膏的一些实施中，由焊膏形成的焊接接头中Sn:Sb的比可为大约1:1至1.3:1。在涉及在功率模块装置/应用中使用焊膏的一些实施中，在由焊膏形成的焊接接头中Sn∶Sb的比可为大约1:1至1.8:1。
图3是显示由五种不同焊膏形成的焊接接头在不同测试温度(℃)下的结合剪切强度(MPa)的图。具体而言，图3显示了表3中前五种焊膏的结合剪切强度，其中874-33-1是指表1中的第一焊膏，847-33-2是指表3中的第二焊膏等。如所描绘，五分之三的焊膏(874-33-1、874-33-2和874-33-3)在270℃及以上温度下保持至少10MPa的结合剪切强度。
图4显示了用TA Q2000 DSC测量的图3所描绘的五种焊膏的差示扫描量热仪(DSC)加热曲线。如所示出，对于保持良好高温机械强度的三种焊膏(874-33-1、874-33-2和874-33-3)，H1/H2的比(H1：DSC第一峰的热吸收，以及H2：第二峰的热吸收)小于0.09，而其他两种焊膏(874-33-4和874-33-5)的H1/H2的比高于0.10。以下表4显示了DSC曲线的特性。
表4
Figure BDA0003910963560000072
基于根据本公开内容对焊膏进行的DSC测试，发现焊膏的第一熔化峰的热吸收与焊膏的第二熔化峰的热吸收的更优选比为约0.15或更小。在这些比下，发现由焊膏形成的接头可以保持足够的高温剪切强度(即使在280℃下也大于15MPa)(例如，来自具有足够量的较高熔化温度焊料粉末)和良好的延展性(例如，来自具有足够量的富Sn粉末)。在实施中，焊料粉末的选择和焊料粉末相对wt.％可基于H1/H2比。
与TLPB技术相反，本文所述的实施不依赖于通过消耗低熔化合金在高熔化合金表面上形成IMC来提高焊接接头的熔化温度。在TLPB设计中，在回流期间，IMC以低熔化合金为代价在高熔化金属/合金粉末的表面上形成并生长。随着IMC层厚度的增加，生长速率明显变慢。相比之下，本文所述焊膏形成的焊接接头不依赖于回流期间IMC的形成以实现高温性能。相反，高温性能是通过选择最终接头中高熔化相的适当百分比，并在凝固后用高熔化相来限制低熔化相获得的。
尽管上文已描述了所公开技术的各种实施方式，但应理解，它们只是实施例而非限制性的方式呈现。类似地，各种图可描绘所公开技术的实例架构或其他配置，其用于帮助理解可包括在所公开技术中的特征和功能。所示出的实施方式及其各种替代方案可以在不局限于所示出的实施例的情况下实现。此外，关于流程图、操作说明和方法权利要求，除非上下文另有规定，否则本文呈现的步骤的顺序不应强制要求以相同的顺序实施各个实施方式以执行所述功能。
尽管上文根据各种示例性实施方式和实施描述了所公开的技术，但应理解，在一个或多个单独实施方式中描述的各种特征、方面和功能不限于它们对所描述的特定实施方式的适用性，但可以单独或以各种组合应用于所公开技术的其他实施方式中的一个或多个，无论这些实施方式是否被描述以及这些特征是否被呈现为所述实施方式的一部分。因此，本文公开的技术的广度和范围不应受任何上述示例性实施方式的限制。
除非另有明确说明，否则本文件中使用的术语和短语及其变体应解释为开放式而非限制性的。作为前述的实例：“包括(including)”应理解为“包括但不限于”等；术语“实施例”用于提供讨论中项目的示例性实例，而不是其详尽或限制性列表；术语“一(a)”或“一个(an)”应理解为“至少一个”、“一个或多个”等；诸如“常规”、“传统”、“正常”、“标准”、“已知”等的形容词和类似含义的术语不应被解释为将所述项目限制在给定的时间段或限制在给定时间可用的项目，而应理解为包括现在或将来任何时候可用或已知的常规、传统、正常、或标准技术。同样，如果本文件涉及本领域普通技术人员显而易见或已知的技术，则这种技术包括本领域技术人员现在或将来任何时候显而易见或已知的那些。
在一些情况下，诸如“一个或多个”、“至少”、“但不限于”或其他类似短语等的扩展词语和短语的存在不应被理解为意味着在可能不存在这种扩展短语的情况下，有意或需要使用更窄的情况。

Claims (20)

1.一种焊膏，其由以下组成：
10wt％至90wt％的第一焊料合金粉末，所述第一焊料合金粉末由Sn:Sb的wt％比为0.75至1.1的SnSbCuAg焊料合金组成；
10wt％至90wt％的第二焊料合金粉末，所述第二焊料合金粉末由包括至少80wt％的Sn的Sn焊料合金组成；以及
余量的助焊剂。
2.根据权利要求1所述的焊膏，其中所述焊膏由以下组成：50wt％至90wt％的所述第一焊料合金粉末、10wt％至50wt％％的所述第二焊料合金粉末、以及余量的所述助焊剂。
3.根据权利要求2所述的焊膏，其中所述焊膏由以下组成：75wt％至90wt％的所述第一焊料合金粉末、10wt％至25wt％的所述第二焊料合金粉末、以及余量的所述助焊剂。
4.根据权利要求2所述的焊膏，其中所述第一焊料合金粉末的固相线温度为300℃至360℃，并且其中所述第二焊料合金粉末的固相线温度为200℃至250℃。
5.根据权利要求4所述的焊膏，其中所述第二焊料合金粉末的固相线温度为215℃至245℃。
6.根据权利要求4所述的焊膏，其中所述第一焊料合金粉末的液相线温度不大于360℃。
7.根据权利要求4所述的焊膏，其中所述第二焊料合金粉末的液相线温度不大于250℃。
8.根据权利要求5所述的焊膏，其中所述第二焊料合金粉末的液相线温度不大于245℃。
9.根据权利要求1所述的焊膏，其中所述第一焊料合金粉末由以下组成：
4wt％至10wt％的Cu；
4wt％至20wt％的Ag；
任选地，0.5wt％或更少的Bi、Co、In、Ge、Ni、P或Zn；以及
余量的比为0.75至1.1的Sn和Sb。
10.根据权利要求1所述的焊膏，其中所述第二焊料合金粉末为SnAg、SnCu、SnAgCu、SnSb、SnAgCuSb、PnAgY(Y＝Bi、Co、Ge、In、Ni、P、Sb或Zn)、SnCuY(Y＝Bi、Co、Ge、In、Ni、P、Sb或Zn)、SnAgCuY(Y＝Bi，Co，Ge，In，Ni，P，Sb或Zn)或SnAgCuSbY(Y＝Bi、Co、Ge、In、Ni、P、Sb或Zn)。
11.根据权利要求10所述的焊膏，其中所述第二焊料合金粉末包括0.1至4wt％的Ag、0.1至1wt％的Cu或0.1至11wt％的Sb。
12.根据权利要求11所述的焊膏，其中所述第二焊料合金粉末包括0.1至4wt％的Ag、0.1至1wt％的Cu和0.1至11wt％的Sb。
13.根据权利要求12所述的焊膏，其中所述第二焊料合金粉末掺杂有Bi、Co、Ge、In、Ni、P、Sb或Zn。
14.根据权利要求1所述的焊膏，其中所述焊膏的第一熔化峰的热吸收与所述焊膏的第二熔化峰的热吸收的比为0.15或更小。
15.根据权利要求1所述的焊膏，其中所述焊膏由以下组成：小于50wt％的所述第一焊料合金粉末、大于50wt％的所述第二焊料合金粉末、以及余量的所述助焊剂。
16.一种方法，其包括：
在基板和装置之间施加焊膏以形成组件，其中所述焊膏以下组成：10wt％至90wt％的第一焊料合金粉末，所述第一焊料合金粉末由Sn:Sb的wt％比为0.75至1.1的SnSbCuAg焊料合金组成；10wt％至90wt％的第二焊料合金粉末，所述第二焊料合金粉末由包括至少80wt％的Sn的Sn焊料合金组成；以及余量的助焊剂；
在大于320℃的峰值温度下对所述组件进行第一回流焊接工艺，以由焊膏形成焊接接头；以及
在形成所述焊接接头后，在230℃至270℃的峰值温度下对所述组件进行第二回流焊接工艺。
17.根据权利要求16所述的方法，其中所述装置是硅芯片，所述基板包括Cu引线框架，并且所述焊膏被施加在所述Cu引线框架和所述硅芯片之间。
18.根据权利要求16所述的方法，其中：
所述焊膏由50wt％至90wt％的所述第一焊料合金粉末、10wt％至50wt％的所述第二焊料合金粉末、以及余量的助焊剂组成；
所述第一焊料合金粉末的固相线温度为300℃至360℃；并且
所述第二焊料合金粉末的固相线温度为200℃至250℃。
19.根据权利要求16所述的方法，其中在所述第二回流焊接工艺期间，所述焊接接头保持大于或等于10MPa的结合剪切强度。
20.一种焊接接头，其通过以下方法形成：
在基板和装置之间施加焊膏以形成组件；和
回流焊接所述组件以形成所述焊接接头；
其中所述焊膏由以下组成：
10wt％至90wt％的第一焊料合金粉末，所述第一焊料合金粉末由Sn:Sb的wt％比为0.75至1.1的SnSbCuAg焊料合金组成；
10wt％至90wt％的第二焊料合金粉末，所述第二焊料合金粉末由包括至少80wt％的Sn的Sn焊料合金组成；以及
余量的助焊剂。
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