CN115443546A - 一种雪崩光电二极管 - Google Patents
一种雪崩光电二极管 Download PDFInfo
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- CN115443546A CN115443546A CN202080100027.1A CN202080100027A CN115443546A CN 115443546 A CN115443546 A CN 115443546A CN 202080100027 A CN202080100027 A CN 202080100027A CN 115443546 A CN115443546 A CN 115443546A
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- 239000000758 substrate Substances 0.000 claims abstract description 93
- 230000005684 electric field Effects 0.000 claims abstract description 53
- 238000010521 absorption reaction Methods 0.000 claims abstract description 45
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 17
- 239000000956 alloy Substances 0.000 claims abstract description 17
- FAWGZAFXDJGWBB-UHFFFAOYSA-N antimony(3+) Chemical compound [Sb+3] FAWGZAFXDJGWBB-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 48
- 239000012535 impurity Substances 0.000 claims description 44
- 239000004065 semiconductor Substances 0.000 claims description 29
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- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
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- 238000004088 simulation Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
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- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
一种雪崩光电二极管，涉及光电转换领域，能够提高雪崩光电二极管灵敏度和速率。雪崩光电二极管包括：衬底(21)以及设置于衬底(21)上的多个外延层，多个外延层包括依次层叠设置的第一接触层(23)、倍增层(24)、电场调控层(25)、吸收层(26)以及第二接触层(29)；其中，倍增层(24)采用含锑元素Sb的数字合金。
Description
PCT国内申请，说明书已公开。
Claims (23)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2020/138048 WO2022133655A1 (zh) | 2020-12-21 | 2020-12-21 | 一种雪崩光电二极管 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115443546A true CN115443546A (zh) | 2022-12-06 |
Family
ID=82156915
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202080100027.1A Pending CN115443546A (zh) | 2020-12-21 | 2020-12-21 | 一种雪崩光电二极管 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN115443546A (zh) |
| WO (1) | WO2022133655A1 (zh) |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002111043A (ja) * | 2000-10-03 | 2002-04-12 | Matsushita Electric Ind Co Ltd | アバランシェフォトダイオード |
| TWI228320B (en) * | 2003-09-09 | 2005-02-21 | Ind Tech Res Inst | An avalanche photo-detector(APD) with high saturation power, high gain-bandwidth product |
| US7741657B2 (en) * | 2006-07-17 | 2010-06-22 | Intel Corporation | Inverted planar avalanche photodiode |
| CN107004734A (zh) * | 2014-12-05 | 2017-08-01 | 日本电信电话株式会社 | 雪崩光电二极管 |
| CN106711253B (zh) * | 2016-12-14 | 2018-07-27 | 江苏华功第三代半导体产业技术研究院有限公司 | 一种iii族氮化物半导体雪崩光电二极管探测器 |
| KR102562806B1 (ko) * | 2018-07-11 | 2023-08-01 | 에스알아이 인터내셔널 | 과잉 잡음이 없는 선형 모드 아발란체 포토다이오드들 |
| CN109728132B (zh) * | 2018-12-18 | 2020-10-16 | 暨南大学 | 倒装型可见光增敏硅基雪崩光电二极管阵列的制备方法 |
| CN110165013A (zh) * | 2019-04-28 | 2019-08-23 | 上海科技大学 | 一种ⅲ族氮化物雪崩光电二极管组件及其制备方法 |
-
2020
- 2020-12-21 WO PCT/CN2020/138048 patent/WO2022133655A1/zh active Application Filing
- 2020-12-21 CN CN202080100027.1A patent/CN115443546A/zh active Pending
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| Publication number | Publication date |
|---|---|
| WO2022133655A1 (zh) | 2022-06-30 |
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