CN110165013A - 一种ⅲ族氮化物雪崩光电二极管组件及其制备方法 - Google Patents
一种ⅲ族氮化物雪崩光电二极管组件及其制备方法 Download PDFInfo
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Abstract
本发明公开了一种Ⅲ族氮化物雪崩光电二极管组件及其制备方法。所述雪崩光电二极管组件包括依次复合的N型GaN或AlGaN层、吸收层、电荷调制层、倍增层、P型GaN层、缓冲层及衬底。制备方法为:选择临时衬底;在临时衬底上生长AlN缓冲层;在AlN缓冲层上外延生长淀积GaN膜;将临时衬底与AlN缓冲层剥离;利用电子束蒸发蒸镀电极,使最上层的N型GaN层根据需要形成AlGaN层。本发明利用倒装芯片技术以及衬底剥离技术,获得了阴极在器件顶部的N‑i‑N‑i‑P结构的APD。本发明充分利用GaN材料当中的碰撞电离系数高于电子的碰撞电离系数的优势,从而增加碰撞电离的机会和可能性,继而实现较小的工作电压。
Description
技术领域
本发明涉及一种雪崩光电二极管,具体涉及一种Ⅲ族氮化物雪崩光电二极管组件及其制备方法,属于光电二极管技术领域。
背景技术
以氮化镓为代表的Ⅲ族氮化物材料具有大的禁带宽度,高电子饱和迁移率,高临界击穿电场强等特点,被广泛应用于包括可见光发光二极管,激光器光源,异质结晶体管,紫外探测器,耐高压整流管在内的多个领域。由于氮化镓材料的禁带宽度在3.4电子伏特,对应的波长为365纳米,位于紫外频段。所以氮化镓以及禁带宽度更大的氮化铝镓材料十分适合应用于紫外探测领域。为了获得较大的增益,通常将光电探测器制备成具有雪崩效应的雪崩光电二极管(APD)。最早的关于GaN基APD是1998年A.Osinsky等报道的,最大的雪崩增益在3左右,光电流为30μA左右。经过过去三十年的发展,目前主流的氮化镓APD器件只能实现正面照射以及空穴触发两种特性中的一种。现有的氮化镓基紫外光APD技术大致分为两类,第一类即背照式空穴触发型的GaN基APD;第二类即前照式电子触发型GaN基APD,但都存在工作电压较高、响应度低以及灵敏度低等缺点。
下面分别介绍两种类型检测紫外光所设计的APD结构。
(1)背照式空穴触发型的GaN基APD
典型的背照式空穴触发型的GaN基APD如图1所示,依次包括P型GaN层1、倍增层2、电荷调制层3、吸收层4、N型GaN或AlGaN层5、缓冲层6及透明的衬底7,其中,衬底7的一侧为背面。该结构可以是利用MOCVD方法生长获得的P-i-N-i-N结构[1]-[3]。该结构的工作机理为紫外光先通过衬底7以及缓冲层6,然后进入GaN吸收层,继而产生电子-空穴对。因为氮化镓雪崩光电二极管工作在反向偏置条件下,电子与空穴将向相反的方向移动。在图(1)所示的结构当中,进入倍增层的载流子类型是空穴,即空穴在大电场的作用下,在倍增区内与原子进行碰撞,实现碰撞电离(impact ionization)和雪崩倍增。该背照式空穴触发型APD利用了氮化镓材料当中空穴的碰撞电离系数大于电子的碰撞电离系数的性质,从而增加了碰撞电离的几率。但该结构需要具有高度透明的基板和缓冲层,但这两点通常不容易实现,光从器件背面照射(图1中箭头所示)以后,进入工作区的光能被损耗,产生的光生载流子变少,实现雪崩倍增效应的电压就会变大,响应度低,灵敏度下降。
(2)前照式电子触发型GaN基APD
典型的前照式电子触发型的GaN基APD如图2所示,依次包括P型GaN层1、吸收层4、电荷调制层3、倍增层2、N型GaN或AlGaN层5、缓冲层6及衬底7,衬底7一般采用Si、蓝宝石或SiC,其中,衬底7的一侧为背面。该结构可以是利用MOCVD方法生长获得的p-i-p-i-n结构[4]。该结构的工作机理为紫外光从器件的正面入射[5]处于反向偏置的器件中(图2中箭头所示):当进入GaN吸收层后产生电子-空穴对。因为氮化镓材料雪崩光电二极管工作在反向偏置条件下,电子与空穴将向相反的方向移动。在该前照式电子触发型GaN基APD当中,进入倍增区的载流子类型是电子,即电子在大电场作用下,在倍增区内与原子进行碰撞,实现碰撞电离(impact ionization)和雪崩倍增。此前照式光电二极管设计虽然对衬底要求较低,但发生碰撞电离的载流子为电子。在氮化镓材料里电子的碰撞电离系数低于空穴的碰撞电离系数一个量级。所以这种前照式电子触发式APD需要较高的工作电压。
参考文献:
[1]Bulmer,J.,et al.(2016)."Visible-Blind APD Heterostructure DesignWith Superior Field Confinement and Low Operating Voltage."IEEE PhotonicsTechnology Letters 28(1):39-42.
[2][I]吕志强.一种镓氮雪崩光电二极管组件及其制备方法:中国,106684203.A[P].2017-05-07.
[3][I]陈敦军.高增益的AlGaN紫外雪崩光电探测器及其制备方法:中国,103400888.A[P].2013-11-20.
[4]Ji,M.,et al.(2018)."p-i-p-i-n Separate Absorption andMultiplication Ultraviolet Avalanche Photodiodes."IEEE Photonics TechnologyLetters 30(2):181-184.
[5][I]潘忠.前照式雪崩光电二极管:中国,101436621.A[P].2009-05-20
发明内容
本发明所解决的技术问题是:现有光电二极管工作电压较高、响应度低以及灵敏度低等问题。
为了解决上述问题,本发明所采用的技术方法是:
一种Ⅲ族氮化物雪崩光电二极管组件,其特征在于,包括依次复合的N型GaN或AlGaN层、吸收层、电荷调制层、倍增层、P型GaN层、缓冲层及衬底;其中,吸收层、倍增层均采用i型GaN;吸收层构成吸收区,用于吸收紫外光的能量从而产生光生载流子;电荷调制层构成电荷区,用于调节电场分布;倍增层构成倍增区,用于使电场作用下漂移进入的空穴与晶格发生碰撞电离,实现雪崩倍增的效果,使电流达到增益的目的。
优选地,所述雪崩光电二极管组件的光照方式为从N型GaN或AlGaN层一侧的正面照射。
优选地,所述N型GaN或AlGaN层一侧为阴极,衬底一侧为阳极,对阴极施以正向电压,工作区的半导体吸收光能产生光生载流子即电子-空穴对,电子-空穴对在电场作用下进行漂移运动,使空穴进入倍增区,在倍增区的电场作用下,空穴与晶格发生碰撞电离发生雪崩倍增效应,产生光电增益。
本发明还提供了上述Ⅲ族氮化物雪崩光电二极管组件的制备方法,其特征在于,包括以下步骤:
步骤1):选择临时衬底;
步骤2):在临时衬底上生长AlN缓冲层;
步骤3):在AlN缓冲层上外延生长淀积GaN膜:NH3和TMGa反应直接生成GaN,用硅烷(SiH4)、双环戊二烯基镁(Mg(C5H5)2,Cp2Mg)分别用作N型和P型掺杂剂,形成N型和P型的GaN层,从而在AlN缓冲层上形成P-i-N-i-N结构,即依次为P型GaN层、倍增层、电荷调制层、吸收层、N型GaN层;
步骤4):利用倒装芯片技术在P型GaN层上接触或粘合金属作为缓冲层,在缓冲层上安装衬底,然后利用衬底剥离技术将临时衬底与AlN缓冲层剥离,使缓冲层上形成N-i-N-i-P结构,即依次为N型GaN层、吸收层、电荷调制层、倍增层、P型GaN层;
步骤5):利用电子束蒸发蒸镀电极,使最上层的N型GaN层根据需要形成AlGaN层,即最上层为N型GaN或AlGaN层。
优选地,所述步骤1)中的临时衬底采用蓝宝石,碳化硅或硅片。
优选地,所述步骤3)中硅烷用氢气溶剂稀释至200ppm后使用。
本发明提供了一种前照式空穴触发型的GaN基APD,其利用倒装芯片技术以及衬底剥离技术,获得了阴极在器件顶部的N-i-N-i-P结构的APD,该技术方法适用于异质衬底,如硅片或蓝宝石衬底上生长的GaN-APD。基于其正面照射的工作模式,该器件对衬底的依赖性较小;同时该器件模式也适合需要APD阵列的应用。本发明可同时实现以下工作模式:
1.正面照射的工作方式,可以使得入射光的能量最大程度上进入氮化镓器件当中。
2.空穴触发型的雪崩光电二极管,可以充分利用GaN材料当中的碰撞电离系数高于电子的碰撞电离系数的优势,从而增加碰撞电离的机会和可能性,继而实现较小的工作电压。
附图说明
图1为背照式空穴触发型的GaN基APD的示意图;
图2为前照式空穴触发型GaN基APD的示意图;
图3-8为本发明提供的Ⅲ族氮化物雪崩光电二极管组件制备过程中不同步骤时的示意图;
图9为本发明对紫外光的吸收情况的数据图;
图10为电子和空穴的电离系数与结构的关系图;
图11为光电流与暗电流随反向电压变化的曲线以及其光电增益的数据图。
具体实施方式
为使本发明更明显易懂,兹以优选实施例,并配合附图作详细说明如下。
实施例
一种Ⅲ族氮化物雪崩光电二极管组件的制备方法,包括以下步骤:
步骤1:选择临时衬底9,可采用蓝宝石,碳化硅或硅片(图3所示);本发明在衬底方面的要求较低,不需要考虑衬底工艺的欠缺所带来的影响。
步骤2:在临时衬底9上生长AlN缓冲层8(图4所示);
步骤3:在AlN缓冲层8上外延生长淀积GaN膜:NH3和TMGa反应直接生成GaN,用硅烷(硅烷用氢气溶剂稀释至200ppm后使用)、双环戊二烯基镁分别用作N型和P型掺杂剂,形成N型和P型的GaN层,从而在AlN缓冲层8上形成P-i-N-i-N结构,即依次为P型GaN层1、倍增层2、电荷调制层3、吸收层4、N型GaN层(图5所示);
步骤4:利用倒装芯片技术在P型GaN层1上接触或粘合金属作为缓冲层6(图6所示),在缓冲层6上安装衬底7(图7所示),然后利用衬底剥离技术将临时衬底9与AlN缓冲层8剥离,使缓冲层6上形成N-i-N-i-P结构,即依次为N型GaN层、吸收层4、电荷调制层3、倍增层2、P型GaN层1(图8所示);
步骤5:利用电子束蒸发蒸镀电极,使最上层的N型GaN层根据需要形成AlGaN层,即最上层为N型GaN或AlGaN层5。目的是为了减少更多的光损耗,故利用AlGaN材料不吸收紫外光的优点进行进一步的改进。
上述制备方法制得的Ⅲ族氮化物雪崩光电二极管组件如图8所示,包括依次复合的N型GaN或AlGaN层5、吸收层4、电荷调制层3、倍增层2、P型GaN层1、缓冲层6及衬底7;其中,吸收层4、倍增层2均采用i型GaN;吸收层4构成吸收区,用于吸收紫外光的能量从而产生光生载流子;电荷调制层3构成电荷区,用于调节电场分布;倍增层2构成倍增区,用于使电场作用下漂移进入的空穴与晶格发生碰撞电离。其光照方式为从N型GaN或AlGaN层5一侧的正面照射(图8中空心箭头所示,图8中实心箭头表示电场方向)。通过正面照射,有利于减少由于背面照射造成的光损耗,并且利于集成。紫外光的吸收情况如图9所示。将340纳米的光从N型GaN或AlGaN层5一侧的正面照射,GaN材料可以吸收340纳米的光,而对于AlGaN材料来说,340纳米的光是不被其所吸收。由图9可以看出,AlGaN/GaN APD的相对光照强度在N型的AlGaN层5没有被损耗即被吸收;而在GaN APD的相对光照强度在N型的GaN层5呈线性下降,即意味着GaN APD对光有所吸收。
N型GaN或AlGaN层5一侧为阴极,衬底7一侧为阳极,对阴极施以正向电压,工作区的半导体吸收光能产生光生载流子即电子-空穴对,电子-空穴对在电场作用下进行漂移运动,使空穴进入倍增区,在倍增区的电场作用下,空穴与晶格发生碰撞电离发生雪崩倍增效应,产生光电增益。本发明实现进入倍增区的载流子类型是空穴,充分利用了GaN材料空穴的碰撞电离系数大于电子的碰撞电离系数这一特性,使得制得的APD结构的工作电压降低,易于实现且具有实用性。电子和空穴的电离系数与结构的关系图如图10所示,在同等的电压条件下,空穴的电离系数远大于电子的电离系数。
光电流与暗电流随反向电压变化的曲线以及其光电增益如图11所示,分别对APD加以1e-7W/cm2和1e-3W/cm2的光照强度,随着反向电压的不断增加,到95V左右,APD的电流急剧增加,此时的电流成为雪崩电流,由光电流与暗电流随反向电压变化的曲线可以算出其光电增益。由图10可见,本发明不仅减少了光能损耗,而且实现空穴触发的触发模式,因而其光增益达到了105-106。
综上所述,本发明涉及的APD器件结构简单,对衬底要求较低,利于集成,具有高的光电增益、高响应度,具有可控性和实用性。
Claims (6)
1.一种Ⅲ族氮化物雪崩光电二极管组件,其特征在于,包括依次复合的N型GaN或AlGaN层(5)、吸收层(4)、电荷调制层(3)、倍增层(2)、P型GaN层(1)、缓冲层(6)及衬底(7);其中,吸收层(4)、倍增层(2)均采用i型GaN;吸收层(4)构成吸收区,用于吸收紫外光的能量从而产生光生载流子;电荷调制层(3)构成电荷区,用于调节电场分布;倍增层(2)构成倍增区,用于使电场作用下漂移进入的空穴与晶格发生碰撞电离。
2.如权利要求1所述的的Ⅲ族氮化物雪崩光电二极管组件,其特征在于,所述雪崩光电二极管组件的光照方式为从N型GaN或AlGaN层(5)一侧的正面照射。
3.如权利要求1所述的的Ⅲ族氮化物雪崩光电二极管组件,其特征在于,所述N型GaN或AlGaN层(5)一侧为阴极,衬底(7)一侧为阳极,对阴极施以正向电压,工作区的半导体吸收光能产生光生载流子即电子-空穴对,电子-空穴对在电场作用下进行漂移运动,使空穴进入倍增区,在倍增区的电场作用下,空穴与晶格发生碰撞电离发生雪崩倍增效应,产生光电增益。
4.一种权利要求1所述的Ⅲ族氮化物雪崩光电二极管组件的制备方法,其特征在于,包括以下步骤:
步骤1):选择临时衬底(9);
步骤2):在临时衬底(9)上生长AlN缓冲层(8);
步骤3):在AlN缓冲层(8)上外延生长淀积GaN膜:NH3和TMGa反应直接生成GaN,用硅烷、双环戊二烯基镁分别用作N型和P型掺杂剂,形成N型和P型的GaN层,从而在AlN缓冲层(8)上形成P-i-N-i-N结构,即依次为P型GaN层(1)、倍增层(2)、电荷调制层(3)、吸收层(4)、N型GaN层;
步骤4):利用倒装芯片技术在P型GaN层(1)上接触或粘合金属作为缓冲层(6),在缓冲层(6)上安装衬底(7),然后利用衬底剥离技术将临时衬底(9)与AlN缓冲层(8)剥离,使缓冲层(6)上形成N-i-N-i-P结构,即依次为N型GaN层、吸收层(4)、电荷调制层(3)、倍增层(2)、P型GaN层(1);
步骤5):利用电子束蒸发蒸镀电极,使最上层的N型GaN层根据需要形成AlGaN层,即最上层为N型GaN或AlGaN层(5)。
5.如权利要求1所述的Ⅲ族氮化物雪崩光电二极管组件的制备方法,其特征在于,所述步骤1)中的临时衬底(9)采用蓝宝石,碳化硅或硅片。
6.如权利要求1所述的Ⅲ族氮化物雪崩光电二极管组件的制备方法,其特征在于,所述步骤3)中硅烷用氢气溶剂稀释至200ppm后使用后使用。
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