CN101299434B - 双光子无源红外上转换成像器件制造方法 - Google Patents
双光子无源红外上转换成像器件制造方法 Download PDFInfo
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- CN101299434B CN101299434B CN2008100391851A CN200810039185A CN101299434B CN 101299434 B CN101299434 B CN 101299434B CN 2008100391851 A CN2008100391851 A CN 2008100391851A CN 200810039185 A CN200810039185 A CN 200810039185A CN 101299434 B CN101299434 B CN 101299434B
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CN101299434B true CN101299434B (zh) | 2010-07-21 |
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CN102610685B (zh) * | 2011-03-30 | 2014-07-09 | 郑州大学 | 用于太阳电池的等离子激元增强上转换器及其制备 |
WO2019100380A1 (zh) * | 2017-11-27 | 2019-05-31 | 清华大学 | 上转换器件和材料及其制造方法 |
CN110222365B (zh) * | 2019-04-28 | 2021-09-07 | 上海机电工程研究所 | 用于红外辐射生成的光子转换晶片的设计方法和系统 |
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Owner name: SHANXI GUOHUI OPTOELECTRONIC TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: SHANGHAI JIAO TONG UNIVERSITY Effective date: 20130320 |
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Effective date of registration: 20130320 Address after: 030006, 6, 16, 17 and 15, Gaoxin International Building, No. 227, Changzhi Road, Taiyuan hi tech Zone, Shanxi, China Patentee after: Shanxi Guohui Photoelectric Technology Co., Ltd. Address before: 200240 Dongchuan Road, Shanghai, No. 800, No. Patentee before: Shanghai Jiao Tong University |