CN115440830A - Non-doped hetero-crystalline silicon solar cell with laminated passivation contact structure - Google Patents
Non-doped hetero-crystalline silicon solar cell with laminated passivation contact structure Download PDFInfo
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- 238000002161 passivation Methods 0.000 title abstract description 15
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract description 11
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052709 silver Inorganic materials 0.000 claims abstract description 14
- 239000004332 silver Substances 0.000 claims abstract description 14
- 239000011575 calcium Substances 0.000 claims abstract description 7
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims abstract description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 24
- 229910052710 silicon Inorganic materials 0.000 claims description 24
- 239000010703 silicon Substances 0.000 claims description 24
- 238000003475 lamination Methods 0.000 claims description 9
- 229910005855 NiOx Inorganic materials 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 abstract description 3
- 238000005036 potential barrier Methods 0.000 abstract description 2
- 239000010409 thin film Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 30
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 19
- 239000000463 material Substances 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 239000010936 titanium Substances 0.000 description 12
- 238000001704 evaporation Methods 0.000 description 11
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 11
- 239000010408 film Substances 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 7
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 6
- 229910000480 nickel oxide Inorganic materials 0.000 description 6
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 5
- 230000005525 hole transport Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 1
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 1
- 229940112669 cuprous oxide Drugs 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic Table, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
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Abstract
The invention discloses a non-doped hetero-crystalline silicon solar cell with a laminated passivation contact structure, which has the following structure: using n-type monocrystalline silicon wafer as substrate, and periodically providing NiO on its front surface x a/Ni stack of which 0<x<1.0, and an ITO layer and a silver electrode are arranged on the surface; periodically having TiO on its back surface y a/Ti stack of 1.0<y<2.0, and a calcium/magnesium metal thin film layer and a silver electrode are arranged on the surface. The invention can reduce the height of potential barrier and promote the transmission of electrons, thereby further improving the efficiency of the battery.
Description
Technical Field
The invention belongs to the field of crystalline silicon solar cells, and particularly relates to a non-doped hetero-crystalline silicon solar cell with a laminated passivation contact structure.
Background
The solar cell can be seen as comprising a light absorption layer, an electron transport layer and a hole transport layer, wherein the electron transport layer has the functions of transporting electrons and blocking holes, and the hole transport layer has the opposite functions. The absorption layer (e.g., crystalline silicon) absorbs sunlight to generate photogenerated carriers (electrons and holes) which migrate in opposite directions toward the surface of the absorption layer and ultimately to the contact electrode region. If the electron and hole transport layers are in contact with the absorber layer, which combines good conductivity (low resistivity) and passivation (low saturation recombination current density), this type of contact can be referred to as a passivated contact. The electron or hole selective properties of the passivating contact material of an undoped heterocrystalline silicon solar cell are determined by the fact that the contact material work function matches the conduction and valence bands of silicon. If the material has a lower work function (4.05-5.15 eV) compared with silicon, such as lithium fluoride (2.7-3.5 eV), and is matched with a conduction band of silicon, an electron potential well is formed at a silicon interface, so that electrons can be transmitted and holes can be blocked, and therefore, the material with the lower work function is suitable for serving as an electron selective passivation contact material of a non-doped heterogeneous battery; conversely, if the material has a higher work function compared to silicon, such as molybdenum oxide (5.6-6.8 eV), which is more matched to the valence band of silicon, holes can be accumulated in the potential well near the silicon interface, thereby facilitating hole transport, while electrons encounter a potential barrier at the interface and are repelled, thereby playing a role in blocking electrons, and thus, the high work function material is suitable as a hole selective passivation contact material of the undoped heterojunction cell.
For undoped heterojunction silicon cells, suitable electron-selective passivating contacts are: low work function materials such as lithium fluoride, magnesium oxide, titanium oxide, hafnium oxide, tantalum oxide, and the like, while high work function transition metal oxides such as molybdenum oxide, tungsten oxide, vanadium oxide, cuprous oxide, nickel oxide, and the like are suitable as hole selective passivation contact materials. The selectivity of passivation contact to current carriers is formed by matching the work function of the material with the crystalline silicon energy band, so that the crystalline silicon solar cell without a high-temperature doping diffusion process becomes possible.
Non-doped heterojunction silicon solar currently using lithium fluoride and molybdenum oxide as electron and hole selective passivating contact layers for crystalline siliconThe efficiency of the battery exceeds 21 percent, and the resistivity (rho) and the saturation recombination current density (J) of the passivation contact layer are reduced to further improve the efficiency of the battery 0 ). ρ and J 0 Has close relation with the thickness (d) of the passivation contact layer, wherein rho increases and J increases with the increase of d 0 Reduction; conversely, as d decreases, ρ decreases and J 0 And is increased. Therefore, lower ρ and J are to be obtained simultaneously 0 And d has an optimal value. Of course, there is also a solution in which an intrinsic hydrogenated amorphous silicon layer is deposited on both front and back surfaces of crystalline silicon by Plasma Enhanced Chemical Vapor Deposition (PECVD), the surface of the crystalline silicon is passivated, J 0 It can be guaranteed to be small, so that the value range of d can be large, but the production cost of the undoped heterojunction battery is increased, and the design purpose is contrary to the original purpose.
Disclosure of Invention
The invention aims to provide a non-doped heterojunction crystalline silicon solar cell with a laminated passivated contact structure, wherein the thickness of the passivated contact layer, the resistivity and the saturation recombination current density are optimized to obtain a compromise value.
Therefore, the technical scheme adopted by the invention is as follows: a non-doped heterocrystalline silicon solar cell of a stacked passivated contact structure, characterized by the following structure: using n-type monocrystalline silicon wafer as substrate, and periodically providing NiO on its front surface x a/Ni stack of which 0<x<1.0, and an ITO layer and a silver electrode are arranged on the surface; periodically having TiO on its back surface y a/Ti stack of 1.0<y<2.0, and a calcium/magnesium metal thin film layer and a silver electrode are arranged on the surface.
Furthermore, the NiOx/Ni lamination has 5 to 10 periods and NiO x The total thickness of the/Ni laminate is 15-30 nm.
The TiO is y The lamination of Ti is 5-10 periods, tiO y The total thickness of the/Ti laminated layer is 15-30 nm.
The invention replaces oxide single layer with multiple ultra-thin metal/oxide lamination layers as the passivation contact layer of the battery, wherein the metal plays a role of reducing the kinetic energy of the resistance of the passivation contact layer, thereby simultaneously reducing the resistance of the passivation contact layerAnd lower resistivity and saturated composite current density are obtained, so that the efficiency of the battery is further improved. In the present invention, the hole-selective passivating contact layer is a plurality of ultra-thin nickel oxide/Nickel (NiO) x /Ni, wherein 0<x<1.0 Laminated layers of a plurality of ultra-thin titanium oxide/Titanium (TiO) contact layers y A ratio of/Ti, wherein 1.0<y<2.0 The metal selected here is the same as the metal element in the oxide, mainly to avoid defects at the contact interface between the metal and the oxide and to reduce the saturation recombination current. In addition, because the work function of the contact material serving as the selective passivation of electrons is lower than that of the metal (such as silver, aluminum and the like) connected with the contact material, the barrier formed by the interface of the contact material and the metal electrode can generate a certain blocking effect on the transmission of electrons, and therefore, the metal (such as calcium and magnesium) with the work function between the contact material and the metal electrode can be inserted between the contact material and the metal electrode for reducing the height of the barrier and promoting the transmission of electrons.
Drawings
FIG. 1 is a schematic diagram of the present invention.
Detailed Description
The following is the preparation process of this example with reference to the accompanying drawings.
1. Silicon wafer cleaning
The sample substrate is a double-sided polished monocrystalline silicon wafer (n type, resistivity of 0.1-1.0 omega. Cm, thickness of 0.2-0.3 mm), the substrate is cleaned by adopting a standard RCA (Radio Corporation of America) cleaning process, and then is repeatedly washed by deionized water and dried by nitrogen for standby.
2. Ultra-thin NiOx/Ni stack growth
Growing ultrathin nickel oxide/Nickel (NiO) on the front surface of a silicon wafer by adopting an evaporation method x /Ni, wherein 0<x<1.0 A stack of NiO in which x The thickness of the NiO is 2nm, the thickness of the Ni is 1nm, the total growth period of the laminated layers is 5 to 10, and the NiO x The total thickness of the/Ni laminated layer is 15-30 nm. NiO for vapor deposition x The purity of the powder and the metal Ni is not less than 99.999%. Before the silicon wafer cleaned in the step 1 is placed in an evaporation cavity, soaking the silicon wafer in diluted hydrofluoric acid (1% of HF) for 10-20 s to remove the silicon wafer surfaceOxide layer of (2). The vacuum degree of the cavity is better than 1 multiplied by 10 -4 Pa. Firstly, evaporating nickel oxide, adjusting the heating current to ensure that the evaporation rate of the nickel oxide is 0.05nm/s, and opening a baffle after the rate is stable to start evaporation. The thickness of the nickel oxide film during the growth process was monitored by a quartz crystal resonator, and when the thickness reached 2nm, the shutter was closed. And secondly, evaporating a metal nickel layer with the thickness of 1nm at the evaporation rate of 0.05nm/s, opening the baffle after the rate is stable, starting evaporation, and closing the baffle after 20 seconds. Thirdly, evaporating 5-10 periods of NiOx/Ni lamination according to the above steps, and finally making NiO x The total thickness of the/Ni laminate is 15-30 nm.
3. Ultra-thin TiO 2 y Ti laminated growth
When the front surface of the silicon wafer grows NiO x After Ni, growing ultrathin titanium oxide/Titanium (TiO) on the rear surface of the silicon wafer by using an evaporation method y A ratio of/Ti, wherein 1.0<y<2.0 A stack of layers of which TiO is y The thickness of the film is 2nm, the thickness of Ti is 1nm, the total growth period of the laminated layers is 5-10, and TiO is y The total thickness of the/Ti laminated layer is 15-30 nm. TiO for vapor deposition y The purity of the powder and the metal Ti is not less than 99.999%, and the specific growing method of the film refers to the steps.
4. Calcium/magnesium metal film and silver electrode growth
TiO on the back surface of the silicon wafer y After the growth of the/Ti lamination is finished, a 10nm calcium (Ca) film is firstly grown on the lamination by adopting an evaporation method, then a 10nm magnesium (Mg) film is grown, and finally 300-500 nm silver is grown to be used as an electrode.
5. Front surface ITO and silver electrode growth
NiO is formed on the front surface of the silicon wafer by adopting a magnetron sputtering method x An Indium Tin Oxide (ITO) film with the thickness of 50-70 nm and an interdigital silver electrode with the thickness of 300-500 nm are sequentially grown on the/Ni lamination. The target material for sputtering is ITO target and silver target, the purity is more than 99.99%, and the sputtering working gas is argon. First, sputtering ITO film, the background vacuum of the sputtering chamber is better than 4 x 10 -5 Pa, sputtering pressure of 0.1-0.3 Pa, sputtering power of 20W, deposition temperature of the silicon wafer of room temperature, and film thickness monitored by a quartz crystal resonator. Secondly, sputtering interdigital silver electrodesAnd forming the silver grid line electrode by using the grid line mask plate.
Claims (3)
1. A non-doped heterocrystalline silicon solar cell of a stacked passivated contact structure, characterized by the following structure: using n-type monocrystalline silicon wafer as substrate, and periodically providing NiO on its front surface x a/Ni stack of which 0<x<1.0, and an ITO layer and a silver electrode are arranged on the surface; periodically having TiO on its back surface y a/Ti stack of 1.0<y<2.0, and a calcium/magnesium metal film layer and a silver electrode are arranged on the surface.
2. The undoped heterocrystalline silicon solar cell of stacked passivated contact structure of claim 1 wherein: the NiOx/Ni lamination layer has 5-10 periods and NiO x The total thickness of the/Ni laminate is 15-30 nm.
3. The undoped heterocrystalline silicon solar cell of stacked passivated contact structure of claim 1 wherein: the TiO is y The lamination of/Ti is 5-10 periods, tiO y The total thickness of the/Ti laminated layer is 15-30 nm.
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