CN114759100A - Silicon-based heterojunction solar cell and preparation method thereof - Google Patents
Silicon-based heterojunction solar cell and preparation method thereof Download PDFInfo
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- CN114759100A CN114759100A CN202210312890.4A CN202210312890A CN114759100A CN 114759100 A CN114759100 A CN 114759100A CN 202210312890 A CN202210312890 A CN 202210312890A CN 114759100 A CN114759100 A CN 114759100A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 78
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 78
- 239000010703 silicon Substances 0.000 title claims abstract description 78
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 238000002161 passivation Methods 0.000 claims abstract description 44
- 230000005540 biological transmission Effects 0.000 claims abstract description 43
- 239000000463 material Substances 0.000 claims abstract description 36
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 8
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 5
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims abstract description 4
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 22
- 230000003667 anti-reflective effect Effects 0.000 claims description 6
- AHLATJUETSFVIM-UHFFFAOYSA-M rubidium fluoride Chemical compound [F-].[Rb+] AHLATJUETSFVIM-UHFFFAOYSA-M 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 5
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 claims description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims description 3
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims description 3
- 229910021589 Copper(I) bromide Inorganic materials 0.000 claims description 2
- 229910021591 Copper(I) chloride Inorganic materials 0.000 claims description 2
- 229910021595 Copper(I) iodide Inorganic materials 0.000 claims description 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims description 2
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 claims description 2
- 229910001632 barium fluoride Inorganic materials 0.000 claims description 2
- 229910000423 chromium oxide Inorganic materials 0.000 claims description 2
- 229910000428 cobalt oxide Inorganic materials 0.000 claims description 2
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims description 2
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 claims description 2
- NKNDPYCGAZPOFS-UHFFFAOYSA-M copper(i) bromide Chemical compound Br[Cu] NKNDPYCGAZPOFS-UHFFFAOYSA-M 0.000 claims description 2
- LSXDOTMGLUJQCM-UHFFFAOYSA-M copper(i) iodide Chemical compound I[Cu] LSXDOTMGLUJQCM-UHFFFAOYSA-M 0.000 claims description 2
- 229940045803 cuprous chloride Drugs 0.000 claims description 2
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 claims description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 2
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 2
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 claims description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical class [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000005543 nano-size silicon particle Substances 0.000 claims description 2
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- 238000005498 polishing Methods 0.000 claims description 2
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium oxide Chemical compound O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 2
- 229910001887 tin oxide Inorganic materials 0.000 claims description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 2
- 229910001935 vanadium oxide Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 abstract description 12
- 238000010521 absorption reaction Methods 0.000 abstract description 9
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 230000003071 parasitic effect Effects 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 5
- 150000001875 compounds Chemical class 0.000 abstract description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 239000000969 carrier Substances 0.000 description 8
- 229910052709 silver Inorganic materials 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 238000005286 illumination Methods 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 238000002207 thermal evaporation Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000009388 chemical precipitation Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000000593 microemulsion method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000007773 negative electrode material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000007774 positive electrode material Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
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- 238000004528 spin coating Methods 0.000 description 1
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- 238000005092 sublimation method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
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- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
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- H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic Table, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
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Abstract
The invention relates to the technical field of solar cells, in particular to a silicon-based heterojunction solar cell and a preparation method thereof, wherein the silicon-based heterojunction solar cell comprises a first light-receiving surface and a second light-receiving surface; the first light receiving surface is sequentially provided with an antireflection layer, a first selective transmission layer, a first passivation layer and an n-type silicon chip in a stacking mode, and the antireflection layer is characterized in that the antireflection layer is made of materials selected from the following materials: silicon oxide, silicon nitride, hydrogenated silicon nitride, silicon oxynitride, magnesium fluoride, aluminum oxide, and a stack thereof. According to the silicon-based heterojunction solar cell, the crystalline silicon substrate is directly used as a carrier transmission carrier, the antireflection layer is used for replacing the transparent conductive oxide layer, the wide-band-gap compound material is used for replacing the doped hydrogenated amorphous silicon, so that the loss of short-circuit current caused by extra optical parasitic absorption of the transparent conductive oxide layer and the doped hydrogenated amorphous silicon layer is reduced, and the photoelectric conversion efficiency of the solar cell is improved.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a silicon-based heterojunction solar cell and a preparation method thereof.
Technical Field
Currently, the most widespread, mature and stable contemporary silicon-based solar cells are produced among the solar cells. The mainstream cell structure in the silicon-based photovoltaic industry is a PERC (Passivated emitter and Rear solar cell) structure, and the low ultimate efficiency of the PERC structure limits the further development of the cell efficiency in the industry. SHJ (Silicon Heterojunction Solar Cell) with higher ultimate efficiency is widely regarded by researchers. The SHJ has the advantages of high ultimate efficiency, low manufacturing temperature, high open circuit voltage, good temperature characteristics, simple process, high double-sided rate and the like. In 2016, Kaneka of Japan reported that the combination of SHJ technology and IBC (Interdigitated Back Contact) structure realizes 26.6% of ultra-high efficiency, and still remains the most efficient maintainer of the world of single-junction silicon-based solar cells.
However, photo-generated carrier pairs generated by illumination in the silicon substrate of the silicon-based heterojunction solar cell need to be transversely transmitted to respective metal electrodes to realize effective carrier separation. For PERC, such lateral transmission is typically at n+/p+The diffusion region is realized because the diffusion region has a sufficiently high conductivity to support lateral transport. For SHJ, the intrinsic and doped layers are generally considered to be too thin and too resistive, so lateral carrier transport typically requires the introduction of a TCO (Transparent Conductive Oxide) layer for support. The TCO layer is introduced to improve the transverse transmission capability of carriers, and meanwhile, the antireflection effect can be achieved by controlling the thickness of the TCO layer. However, the incorporation of the TCO layer also has negative effects: 1. compared with other antireflection layer materials, the TCO layer material has insufficient transparency, brings extra optical parasitic absorption, and reduces the short-circuit current density; 2. the common TCO layer material is indium tin oxide, the natural stock of indium element is low, and the cost increase of the battery needs to be considered; the TCO layer material is generally prepared by a magnetron sputtering method or a plasma reaction coating method, the former can cause damage to a silicon substrate and reduce the efficiency of the battery, and the latter has higher cost. In addition, in the silicon-based heterojunction solar cell In the energy cell, the band gap of the doped amorphous silicon film serving as the window layer is about 1.7eV, so that the doped amorphous silicon film has strong parasitic absorption on short-waveband sunlight, the photoresponse of the cell in the short waveband is restricted, and the further improvement of the cell efficiency is also strongly limited.
Disclosure of Invention
The invention aims to overcome the problems in the prior art and provides a silicon-based heterojunction solar cell and a preparation method thereof.
The purpose of the invention is realized by the following technical scheme:
a silicon-based heterojunction solar cell comprises a first light receiving surface and a second light receiving surface; the first light receiving surface is sequentially provided with an antireflection layer, a first selective transmission layer, a first passivation layer and an n-type silicon wafer in a stacking mode, and the antireflection layer is made of materials selected from the following materials: silicon oxide, silicon nitride, hydrogenated silicon nitride, silicon oxynitride, magnesium fluoride, aluminum oxide, and any stack thereof.
Preferably, when the battery is a positive junction battery, the material of the first selective transport layer is selected from: one or more of cuprous iodide, cuprous chloride, cuprous bromide, nickel oxide, cobalt oxide, vanadium oxide, tungsten oxide and molybdenum oxide; when the cell is a back junction cell, the material of the first selective transport layer is selected from: one or more of lithium fluoride, rubidium fluoride, barium fluoride, cesium fluoride, titanium oxide, chromium oxide, hafnium oxide, scandium oxide, zirconium oxide, tantalum oxide, and yttrium oxide.
The doping-free wide band gap carrier selective transmission material is used for replacing doped amorphous silicon, the purpose of selective collection of carriers is achieved through the band bending and the band step action of a conduction band and a valence band, the optical parasitic absorption is reduced, the short-circuit current is improved, and the corresponding cell efficiency is improved.
Preferably, the second light receiving surface of the silicon-based heterojunction solar cell comprises a second selective transmission layer and a second passivation layer, the second passivation layer is stacked on the side, away from the first passivation layer, of the n-type silicon wafer, and the second selective transmission layer is stacked on the side, away from the n-type silicon wafer, of the second passivation layer and is opposite to the carrier type transmitted by the first selective transmission layer.
Preferably, the materials of the first passivation layer and the second passivation layer are each selected from: hydrogenated amorphous silicon, hydrogenated amorphous silicon oxide, hydrogenated nano silicon carbide, silicon oxynitride, titanium oxide, silicon oxide, and aluminum oxide.
Preferably, the thicknesses of the first passivation layer and the second passivation layer are 0-10 nm respectively.
Preferably, the silicon-based heterojunction solar cell further comprises a transparent conductive electrode layer, and the transparent conductive electrode layer is stacked on one side, away from the passivation layer, of the second selective transmission layer.
Preferably, the transparent conductive electrode layer material is selected from: indium tin oxide, aluminum zinc oxide, hydrogenated indium oxide/indium tin oxide, indium zinc oxide, and zinc gallium oxide.
Preferably, the thickness of the transparent conductive electrode layer is 20nm to 200 nm.
Preferably, the thickness of the antireflection layer is 20nm to 200 nm.
The optical transparency of the antireflective layer material is greater than the optical transparency of the TCO layer material, so that the optical parasitic absorption in the layer is reduced and the short circuit current is increased. Meanwhile, in the silicon-based heterojunction solar cell, a high-quality silicon wafer is used, high-quality passivation is realized, certain illumination excitation is applied, and sufficient transverse transmission capacity of current carriers can be provided in the silicon wafer body, so that the current carriers are smoothly and transversely transmitted and collected by a metal electrode, and accordingly, the cell conversion efficiency is improved. And meanwhile, the uniform antireflection effect of the TCO layer can be realized by controlling the thickness of the antireflection layer.
The preparation method of the silicon-based heterojunction solar cell comprises the following steps: performing texturing cleaning or polishing on the n-type silicon wafer; preparing a first passivation layer on one side of an n-type silicon wafer; preparing a first selective transmission layer on one side of the first passivation layer, which is far away from the n-type silicon wafer; preparing an antireflection layer on one side of the first selective transmission layer, which is far away from the first passivation layer; preparing a top electrode connected with the antireflection layer; preparing a second passivation layer on one side of the n-type silicon wafer far away from the first passivation layer; preparing a second selective transmission layer on one side of the second passivation layer far away from the n-type silicon wafer; a bottom electrode is prepared in connection with the second selective transport layer.
Preferably, a second selective transmission layer is prepared on one side of the second passivation layer far away from the n-type silicon wafer, and then a transparent conductive electrode layer is prepared on one side of the second selective transmission layer far away from the second passivation layer; and preparing a bottom electrode connected with the transparent conductive electrode layer.
The sequence of the steps is not limited except that the steps are carried out on the basis of another step.
The top and bottom electrodes are selected from the group consisting of positive and negative electrodes, respectively. The first selective transmission layer transmits holes, the corresponding top electrode is a positive electrode, and the bottom electrode is a negative electrode. The first selective transmission layer transmits electrons, the corresponding top electrode is a negative electrode, and the bottom electrode is a positive electrode.
Further, the first selective transmission layer and the second selective transmission layer are prepared by one of a spin coating method, a thermal evaporation method, a magnetron sputtering method, a chemical vapor deposition method, an electron beam evaporation method, a spray pyrolysis method and an atomic layer deposition method. The antireflection layer is prepared by one of a sol-gel method, a hot wire oxidation sublimation method, a magnetron sputtering method, a chemical vapor deposition method, an electron beam evaporation method, a chemical precipitation method, a hypergravity method and a microemulsion method.
Preferably, the material of the positive electrode can be selected from commonly used solar cell positive electrode materials, such as Al, Ca/Al, Mg/Ag, Cu, Au, Ag, Ti/Pd/Ag, Ti/Au/Ag.
Preferably, the material of the negative electrode can be selected from commonly used solar cell negative electrode materials, such as Al, Ca/Al, Mg/Ag, Cu, Ag, Ti/Pd/Ag, Ti/Au/Ag, LiFx/Al, RbFx/Al.
Referring to fig. 1, the schematic diagram of the present invention, taking a classic SHJ back junction cell of an n-type silicon substrate as an example, under illumination, photo-generated carriers are generated in silicon and need to be separately transmitted to respective metal electrodes. At the first light receiving surface, the transverse transmission path of electrons can be divided into 1. the electrons are upwards transmitted to the TCO layer at the generation site, are transmitted to the lower part of the metal electrode by utilizing the transverse conductivity of the TCO layer, and then are collected; 2. after the production sites are transported to the silicon area under the metal electrode by the lateral conductivity of the silicon body, they are transported upward to the metal electrode. One often underestimates the lateral transport capability of silicon, and therefore introduces a TCO layer and adds the first transport path to achieve more efficient carrier transport. In fact, the current silicon wafer quality can achieve excellent carrier transmission effect, and under the condition of illumination excitation, silicon can provide enough transverse transmission capability. Meanwhile, a doping-free wide band gap compound is used for replacing the doped amorphous silicon on the first light receiving surface and the second light receiving surface, and the purpose of selective carrier collection is achieved through band bending and band offset effects of a conduction band and a valence band. Moreover, the second light receiving surface of the silicon-based heterojunction solar cell adopts the all-metal electrode as a bottom electrode of the cell, so that the transmission loss of incident light can be reduced, and the secondary absorption of the cell on the incident light is realized.
Compared with the prior art, the invention has the following technical effects:
the silicon-based heterojunction solar cell employs an antireflective layer material having a higher optical transparency than a transparent conductive oxide, the antireflective layer material being selected from one of silicon oxide, silicon nitride, hydrogenated silicon nitride, silicon oxynitride, magnesium fluoride, aluminum oxide, and a stack thereof, but not a transparent conductive oxide. In silicon-based heterojunction solar cells, the beneficial effects can be achieved by the following means: 1. the optical transparency of the anti-reflection layer material is greater than that of the TCO layer material, so that the optical parasitic absorption of the anti-reflection layer material is reduced, and the short-circuit current is increased. Meanwhile, under the conditions of realizing high-quality passivation and applying certain illumination excitation, the silicon wafer can provide enough transverse transmission capability for current carriers, so that the current carriers are smoothly and transversely transmitted and collected by the metal electrode. The optical gain of the cell, which is realized by replacing TCO with an anti-reflection layer material with higher optical transparency, is larger than the resistance loss of the carriers transversely transmitted in the silicon wafer after the TCO is removed, so that the conversion efficiency of the solar cell is improved; 2. the common TCO layer is made of indium tin oxide, so that the problems of low natural storage of indium element and increased cost of the battery exist, and the cost can be reduced and the problem of insufficient natural storage of indium element can be solved through the design of the battery; 3. the design of the cell can avoid the problem of silicon wafer quality damage caused by TCO preparation by a magnetron sputtering method; 4. the preparation process steps of the SHJ solar cell are further simplified; 5. the antireflective layer may also achieve a similar antireflective effect of the TCO layer by controlling the thickness.
In addition, the doping amorphous silicon is replaced by the doping-free wide band gap carrier selective transmission material on the first light receiving surface and the second light receiving surface, the purpose of carrier selective collection is achieved through band bending and band offset effects of a conduction band and a valence band, and the beneficial effects can be achieved: 1. the optical parasitic absorption of the wide-band gap material is reduced, the short-circuit current is improved, and the corresponding battery efficiency is improved; 2. the process is simpler, and the material can be prepared at low temperature; 3. the corresponding material is usually undoped (Dopant-Free), which not only means reducing energy consumption, but also means that auger recombination is not as severe as when heavily doped, and to some extent, conversion efficiency is also improved.
Moreover, the second light receiving surface of the silicon-based heterojunction solar cell adopts the all-metal electrode as a bottom electrode of the cell, so that the transmission loss of incident light can be reduced, and the secondary absorption of the cell on the incident light is realized.
Drawings
FIG. 1 is a schematic diagram of a solar cell of the present invention;
FIG. 2 is a schematic diagram of a solar cell according to an embodiment of the present invention;
FIG. 3 is a schematic view of another solar cell according to an embodiment of the present invention;
fig. 4 is a J-V plot of the solar cell of fig. 2.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be described in detail below with reference to specific examples and comparative examples. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the examples given herein without any inventive step, are within the scope of the present invention.
Unless otherwise specified, the devices used in this example are all conventional experimental devices, the materials and reagents used are commercially available, and the experimental methods without specific reference are also conventional experimental methods.
Example 1
Referring to fig. 1, in the embodiment, an n-type silicon wafer is used as a substrate, texturing processing is performed on the n-type silicon wafer 6, and impurities and an oxide layer on the surface of the silicon wafer are removed sequentially through standard RCA cleaning of the silicon wafer, hydrofluoric acid and deionized water treatment; preparing intrinsic hydrogenated amorphous silicon layers with the thickness of 5nm as a first passivation layer 5 and a second passivation layer 7 on two sides of the n-type silicon wafer respectively through a PECVD method; depositing titanium oxide with the thickness of 4-6 nm as a first selective transmission layer 4 on one side of the first passivation layer, which is far away from the n-type silicon wafer, by using titanium tetraisopropoxide as a titanium source and water as an oxygen source through an ALD method; depositing a rubidium fluoride 2/aluminum 1 electrode on one side of the first selective transmission layer, which is far away from the first passivation layer, by a thermal evaporation method to be used as a top electrode (negative electrode); preparing silicon nitride with the thickness of 75nm as an anti-reflection layer material 3 on one side of the first selective transmission layer, which is far away from the first passivation layer, by using a PECVD method; depositing 4-10 nm molybdenum oxide on one side of the second passivation layer, which is far away from the n-type silicon wafer, by a thermal evaporation method to form a second selective transmission layer 8; preparing a silver electrode as a bottom electrode 9 (positive electrode) on the side of the second passivation layer away from the second selective transmission layer; and (5) manufacturing the solar cell.
Further, as shown in fig. 2, a transparent electrode layer TCO layer 10 may be prepared on a side of the second selective transmission layer 8 far from the second passivation layer, and then a silver electrode may be prepared on a side of the second selective transmission layer far from the TCO layer as a bottom electrode 9 (positive electrode); and (5) manufacturing the solar cell.
The open-circuit voltage and the conversion efficiency of the solar cell A1 are measured by adopting a solar cell volt-ampere characteristic testing system. The open circuit voltage was measured at 708mV, with a cell conversion efficiency of 22.23%, as shown in FIG. 4.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the protection scope of the present invention, although the present invention is described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions can be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention.
Claims (10)
1. A silicon-based heterojunction solar cell comprises a first light receiving surface and a second light receiving surface; the first light receiving surface is sequentially provided with an antireflection layer, a first selective transmission layer, a first passivation layer and an n-type silicon chip in a stacking mode, and the antireflection layer is characterized in that the antireflection layer is made of materials selected from the following materials: one or more of silicon oxide, silicon nitride, hydrogenated silicon nitride, silicon oxynitride, magnesium fluoride, aluminum oxide, and laminates thereof.
2. The silicon-based heterojunction solar cell of claim 1, wherein when the cell is a positive junction cell, the material of the first selective transport layer is selected from: one or more of cuprous iodide, cuprous chloride, cuprous bromide, nickel oxide, cobalt oxide, vanadium oxide, tungsten oxide and molybdenum oxide; when the cell is a back junction cell, the material of the first selective transport layer is selected from: one or more of lithium fluoride, rubidium fluoride, barium fluoride, cesium fluoride, titanium oxide, chromium oxide, hafnium oxide, scandium oxide, zirconium oxide, tantalum oxide, and yttrium oxide.
3. The silicon-based heterojunction solar cell according to claim 1, wherein the second light receiving surface comprises a second selective transmission layer and a second passivation layer, the second passivation layer is stacked on the n-type silicon wafer at a side far away from the first passivation layer, and the second selective transmission layer is stacked on the second passivation layer at a side far away from the n-type silicon wafer and is opposite to the carrier species transmitted by the first selective transmission layer.
4. The silicon-based heterojunction solar cell of claim 1, wherein the materials of the first and second passivation layers are each selected from the group consisting of: hydrogenated amorphous silicon, hydrogenated amorphous silicon oxide, hydrogenated nano silicon carbide, silicon oxynitride, titanium oxide, silicon oxide, and aluminum oxide.
5. The silicon-based heterojunction solar cell of claim 4, further comprising a transparent conductive electrode layer stacked on a side of the second selective transport layer away from the passivation layer.
6. The silicon-based heterojunction solar cell of claim 5, wherein the transparent conductive electrode layer material is selected from the group consisting of: indium tin oxide, aluminum zinc oxide, hydrogenated indium oxide/indium tin oxide, indium zinc oxide, and zinc gallium oxide.
7. The silicon-based heterojunction solar cell of claim 5 or 6, wherein the thickness of the transparent conductive electrode layer is 20nm to 200 nm.
8. The silicon-based heterojunction solar cell of claim 1, wherein said antireflective layer is 20nm to 200nm thick.
9. A method for fabricating a silicon-based heterojunction solar cell as claimed in any of claims 1 to 8, comprising the steps of: performing texturing cleaning or polishing on the n-type silicon wafer; preparing a first passivation layer on one side of an n-type silicon wafer; preparing a first selective transmission layer on one side of the first passivation layer, which is far away from the n-type silicon wafer; preparing an antireflection layer on one side of the first selective transmission layer, which is far away from the first passivation layer; preparing a top electrode connected with the antireflection layer; preparing a second passivation layer on one side of the n-type silicon wafer far away from the first passivation layer; preparing a second selective transmission layer on one side of the second passivation layer far away from the n-type silicon wafer; a bottom electrode is prepared in connection with the second selective transport layer.
10. The method for manufacturing the silicon-based heterojunction solar cell according to claim 9, wherein the second selective transmission layer is manufactured on the side of the second passivation layer away from the n-type silicon wafer, and then the transparent conductive electrode layer is manufactured on the side of the second selective transmission layer away from the second passivation layer; and preparing a bottom electrode connected with the transparent conductive electrode layer.
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| JPH06150723A (en) * | 1991-03-27 | 1994-05-31 | Gunze Ltd | Transparent conductive film |
| JP2014229633A (en) * | 2013-05-17 | 2014-12-08 | 株式会社カネカ | Solar cell and manufacturing method therefor, and solar cell module |
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| KR20190004952A (en) * | 2017-07-05 | 2019-01-15 | 엘지전자 주식회사 | Solar cell and method for manufacturing the same |
| CN112701182A (en) * | 2020-12-29 | 2021-04-23 | 北京工业大学 | Solar cell with double-sided light incidence structure |
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| JPH06150723A (en) * | 1991-03-27 | 1994-05-31 | Gunze Ltd | Transparent conductive film |
| JP2014229633A (en) * | 2013-05-17 | 2014-12-08 | 株式会社カネカ | Solar cell and manufacturing method therefor, and solar cell module |
| CN106024927A (en) * | 2016-05-26 | 2016-10-12 | 中国科学院宁波材料技术与工程研究所 | Silicon-based solar cell and preparation method therefor |
| KR20190004952A (en) * | 2017-07-05 | 2019-01-15 | 엘지전자 주식회사 | Solar cell and method for manufacturing the same |
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