CN115437049A - 一种抗刮伤超高亮银反射膜及其制备方法 - Google Patents
一种抗刮伤超高亮银反射膜及其制备方法 Download PDFInfo
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- CN115437049A CN115437049A CN202110624666.4A CN202110624666A CN115437049A CN 115437049 A CN115437049 A CN 115437049A CN 202110624666 A CN202110624666 A CN 202110624666A CN 115437049 A CN115437049 A CN 115437049A
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 75
- 229910052709 silver Inorganic materials 0.000 title claims abstract description 75
- 239000004332 silver Substances 0.000 title claims abstract description 75
- 238000002360 preparation method Methods 0.000 title abstract description 13
- 230000007704 transition Effects 0.000 claims abstract description 43
- 239000000463 material Substances 0.000 claims abstract description 25
- 238000006748 scratching Methods 0.000 claims abstract description 17
- 238000007790 scraping Methods 0.000 claims abstract description 3
- 239000010410 layer Substances 0.000 claims description 240
- 239000011248 coating agent Substances 0.000 claims description 76
- 238000000576 coating method Methods 0.000 claims description 76
- 239000000758 substrate Substances 0.000 claims description 67
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 42
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 42
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 34
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 23
- 239000007788 liquid Substances 0.000 claims description 22
- 230000008569 process Effects 0.000 claims description 22
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 17
- 239000002904 solvent Substances 0.000 claims description 16
- 230000003287 optical effect Effects 0.000 claims description 15
- 239000006120 scratch resistant coating Substances 0.000 claims description 15
- 230000003678 scratch resistant effect Effects 0.000 claims description 15
- 238000001035 drying Methods 0.000 claims description 10
- 239000012752 auxiliary agent Substances 0.000 claims description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 239000002346 layers by function Substances 0.000 claims description 5
- 230000002393 scratching effect Effects 0.000 claims description 4
- KKYDYRWEUFJLER-UHFFFAOYSA-N 1,1,2,2,3,3,4,4,5,5,6,6,7,7,10,10,10-heptadecafluorodecyl(trimethoxy)silane Chemical group CO[Si](OC)(OC)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)CCC(F)(F)F KKYDYRWEUFJLER-UHFFFAOYSA-N 0.000 claims description 3
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 3
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical group 0.000 claims description 3
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 3
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 230000001737 promoting effect Effects 0.000 claims 1
- 238000002310 reflectometry Methods 0.000 abstract description 15
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 82
- 229920000139 polyethylene terephthalate Polymers 0.000 description 61
- 239000005020 polyethylene terephthalate Substances 0.000 description 61
- 239000010408 film Substances 0.000 description 42
- 229910052786 argon Inorganic materials 0.000 description 41
- 230000000052 comparative effect Effects 0.000 description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 14
- 239000001301 oxygen Substances 0.000 description 14
- 229910052760 oxygen Inorganic materials 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 238000012360 testing method Methods 0.000 description 12
- 238000000151 deposition Methods 0.000 description 10
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- 239000012535 impurity Substances 0.000 description 8
- 238000001771 vacuum deposition Methods 0.000 description 8
- VVTSZOCINPYFDP-UHFFFAOYSA-N [O].[Ar] Chemical compound [O].[Ar] VVTSZOCINPYFDP-UHFFFAOYSA-N 0.000 description 7
- 239000013077 target material Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000227 grinding Methods 0.000 description 4
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000011247 coating layer Substances 0.000 description 3
- 230000001427 coherent effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 231100000241 scar Toxicity 0.000 description 3
- 238000006557 surface reaction Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 210000002268 wool Anatomy 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910008051 Si-OH Inorganic materials 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000003636 chemical group Chemical group 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000004334 fluoridation Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000006210 lotion Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- RVZRBWKZFJCCIB-UHFFFAOYSA-N perfluorotributylamine Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)N(C(F)(F)C(F)(F)C(F)(F)C(F)(F)F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F RVZRBWKZFJCCIB-UHFFFAOYSA-N 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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- G02B5/08—Mirrors
- G02B5/0808—Mirrors having a single reflecting layer
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- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
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- C09D4/00—Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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Abstract
本发明涉及背光源LCD反射片材料技术领域,尤其涉及一种抗刮伤超高亮银反射膜及制备方法。为了提高反射膜的反射率,本发明提供一种抗刮伤超高亮度银反射膜。所述反射膜自下而上依次包括基材、过渡层、反射层、低折层、高折层、易接着层和抗刮层。本发明提供的反射膜的反射率高。
Description
技术领域
本发明涉及背光源LCD反射片材料技术领域,同时也涵盖需要类似反射片的领域。尤其涉及一种抗刮伤超高亮银反射膜及制备方法。
背景技术
TFT-LCD(薄膜晶体管液晶显示器,英文thin film transistor-liquid crystaldisplay字头的缩写)为非自身发光的的显示技术装置,需要有背光源(也称为背光模组)的存在才能驱动显示影像。背光模组主要有金属框、LED灯条、灯罩、反射膜、导光板、扩散膜、增光膜和口字胶等组成。其中,LED灯条的线光源将通过导光板的作用转化为面光源,同时一部分光线将从导光板的底部逸出,反射膜把这部分光线高效率和低损耗地反射回背光模组中,从而减少光损耗,提升背光模组的亮度。背光模组亮度的提高,将在很大程度上降低对电能的消耗和提升显示器的光饱和度。
传统银反射膜是将聚对苯二甲酸乙二醇酯(PET)材料镀银后与另一张柔性材料贴合在一起,反射光线需要两次透过PET材料,这一过程会造成光能量损失,导致反射光强衰减,因此传统银反射膜在背光模组中的亮度表现一般在89%-90%(相对3M公司ESR产品)。为迎合市场对高亮度银反射膜产品的需求,提升银反射膜反射率的需求迫在眉睫。
发明内容
为了提高反射膜的反射率,本发明提供一种抗刮伤超高亮度银反射膜。本发明提供的反射膜的反射率高。本发明提供的反射膜只有一层PET基材,解决了传统银反射膜中反射光线两次穿过PET材料造成的光强衰减,从而提高了反射率,且具有抗刮层,减小了银反射膜在生产、运输和组装过程中的刮伤概率,提升了生产和组装良率。
为了解决上述技术问题,本发明采用下述技术方案。
本发明提供一种抗刮伤超高亮度银反射膜,所述反射膜自下而上依次包括基片层(也称为基材)、功能层和抗刮层。
进一步的,所述功能层包括过渡层、反射层、光学调制层和易接着层。进一步的,所述光学调制层包括低折层和高折层。进一步的,所述反射膜自下而上依次包括基材、过渡层、反射层、低折层、高折层、易接着层和抗刮层。进一步的,所述过渡层为金属氧化物层,所述反射层是银镀层,所述低折层材质选自氟化镁或氧化硅中的一种,所述高折层材质选自氧化钛、氧化铌、氧化锌或氧化铝中的一种,所述易接着层材质为氧化硅。进一步的,所述低折层的厚度为59nm,所述高折层的厚度为63nm。进一步的,所述过渡层材质为氧化钛,所述反射层材质为银,所述低折层材质为氧化硅,所述高折层材质为氧化钛,所述易接着层材质为氧化硅;所述过渡层的厚度为10nm,所述银反射层的厚度为120nm,所述低折层的厚度为59nm,所述高折层的厚度为63nm,所述易接着层的厚度为6nm。进一步的,所述抗刮层由抗刮涂液形成。进一步的,所述抗刮涂液包含溶剂和有效助剂;所述有效助剂选自十七氟癸基三甲氧基硅烷、或十三氟辛基三甲氧基硅烷、或二者的组合。进一步的,所述抗刮涂液包括十三氟辛基三甲氧基硅烷与氢氟醚溶剂,十三氟辛基三甲氧基硅烷与氢氟醚溶剂的重量比为50:1。
所述基材的材质选自聚碳酸酯(PC)、聚甲基丙烯酸甲酯(PMMA)、聚对苯二甲酸乙二醇酯(PET)或无色透明聚酰亚胺(CPI)。所述基片的厚度为0.075mm-0.3mm。
所述功能层为由高真空磁控溅射技术制备的无机物镀层。
所述无机物镀层包括过渡层、反射层、光学调制层和易接着层。
所述过渡层为金属氧化物层。进一步的,所述过渡层的材质选自氧化铝、氧化钛中的一种。进一步的,制备氧化铝过渡层所需靶材选自铝或氧化铝。制备氧化钛过渡层所需靶材选自钛或氧化钛。进一步的,所述过渡层的厚度在8-15nm。进一步的,所述过渡层的厚度为10nm。
所述反射层是金属镀层。进一步的,所述反射层的材质选自银、锌或钛中的一种或至少两种的组合。进一步的,所述反射层为银反射层,制备银反射层所需的靶材为纯银靶或银合金靶,所述银反射层的厚度为80-160nm。进一步的,所述银反射层的厚度为120nm。
所述光学调制层包括低折层和高折层。
所述低折层材质选自氟化镁、氧化硅中的一种。进一步的,所述低折层为氧化硅,制备氧化硅所需靶材为纯硅靶,所述氧化硅层厚度为20-100nm。
所述高折层材质选自氧化钛、氧化铌、氧化锌或氧化铝中的一种。进一步的,所述高折层为氧化钛层,制备氧化钛层所需靶材为氧化钛靶,所述氧化钛层厚度为20-120nm。
所述低折层的厚度为59nm,所述高折层的厚度为63nm。
所述易接着层材质选自氧化硅,制备氧化硅所需靶材为纯硅靶。进一步的,所述氧化硅层的厚度为5-10nm。进一步的,所述易接着层的厚度为6nm。
所述氧化钛层用高真空磁控溅射设备制备时,需要在充入氩气的同时充入氩氧混合气体。这是因为氧化物在溅射过程中,分子中的氧原子会结合为氧气而被真空系统抽出镀膜腔室,因此需要在溅射过程中额外补充氧气,以达到氧化钛的原子计量比。
所述光学调制层,由于光是一种电磁波,具有波动性,干涉现象是光波动性的基本特征之一。只有频率相同、振动方向相同或有相同的振动分量、相位相同或是相位差保持恒定的两个相干光源发出的光波才是相干波。同种介质中,不同波长的光折射率不同。波长较短的光折射率较大,而波长较长的光折射率较小。通过调制所述高折层和低折层的物理厚度,使得不同界面处的反射光发生干涉相长(反射加强),此时的反射率就显著提高。同样也可以控制波长为400nm-450nm的蓝光反射增强,配合模组中LED光源可以显著提高背光模组的亮度。
所述抗刮层由抗刮涂液经过涂布后干燥形成,抗刮层可以稳定地覆盖在所述易接着层氧化硅表面。
所述抗刮涂液包含溶剂和有效助剂。
所述溶剂选自乙酸乙酯、环己酮、氢氟醚和全氟三丁胺中的一种或多种混合,多种混合时按照重量比混合。
所述有效助剂选自十七氟癸基三甲氧基硅烷、或十三氟辛基三甲氧基硅烷、或二者的组合。
所述抗刮涂液经涂布后均匀覆盖在易接着层氧化硅表面,经自然干燥3-5min后转移至100℃烘箱干燥熟化,30min后转移至25℃环境下放置4小时。所述有效助剂中包含低表面能氟化基团和表面反应基团两种官能基团。当有机氟化物接触到易接着层氧化硅表面后,有效助剂中的表面反应基团将与易接着层氧化硅的表面官能基团发生化学反应,产生化学键结合,然后成膜。有机氟化物的主要反应基团与易接着层氧化硅表面的羟基(Si-OH)进行缩合反应,由于化学键的存在使得附着力明显提升。此时低表面能的氟化基团会伸向表面,使得表面有爽滑感,降低动摩擦系数,从而减少外界物体对表面刮伤的概率。
另一方面,本发明提供一种抗刮伤超高亮银反射膜的制备方法,所述方法包括如下步骤:(1)利用高真空中频磁控溅射工艺在所述基材上制备过渡层;(2)利用高真空中频磁控溅射工艺在所述过渡层上制备反射层;(3)利用高真空中频磁控溅射工艺在所述反射层上制备低折层;(4)利用高真空中频磁控溅射工艺在所述低折层上制备高折层;(5)利用高真空中频磁控溅射工艺在所述高折层上制备易接着层;(6)在易接着层上涂布抗刮涂液;(7)自然干燥,转移至100℃烘箱干燥熟化,在室温环境下放置;经过上述步骤后获得所述抗刮伤超高亮银反射膜。
进一步的,抗刮伤超高亮银反射膜的制备方法包括如下步骤:
(1)所述PET基材在真空镀膜腔体中,经过氩等离子体清洗,去除表面氧化物和杂质,提高表面能和激发表面化学基团;
(2)利用高真空中频磁控溅射工艺在所述PET基材上制备过渡层;
(3)利用高真空中频磁控溅射工艺在所述过渡层上制备反射层;
(4)利用高真空中频磁控溅射工艺在所述反射层上制备低折层;
(5)利用高真空中频磁控溅射工艺在所述低折层上制备高折层;
(6)利用高真空中频磁控溅射工艺在所述高折层上制备易接着层;
(7)在易接着层上涂布抗刮涂液;
(8)自然干燥3-5min,转移至100℃烘箱干燥熟化40min,在室温环境下放置4小时。
经过上述步骤后获得所述抗刮伤超高亮银反射膜。
与现有技术相比,本发明获得以下优异效果:
(1)利用多层镀膜技术制备光学调制层,将不同折射率的材料镀在反射层银表面,利用相干光源的干涉相长使得反射率进一步提升,符合市场对高亮度反射材料的需求;
(2)利用光学调制层的厚度匹配,可以控制低波长400nm-450nm处的反射率,使得本发明的银反射膜颜色偏蓝色,通过与背光模组中LED光源的搭配,可进一步提升背光模组亮度。同时,背光模组厂家可选择的LED光源种类也更加广泛,可降低其生产成本。
(3)将含有低表面能基团和表面反应基团的有效助剂与含氟溶剂混合,获得抗刮涂液。抗刮涂液涂布在本发明的银反射膜表面,获得了更低的动摩擦系数和优异的抗刮伤效果。同时,由于抗刮涂液的固含量很低,干燥后在表面上形成的涂层很薄,对反射膜光学性能的影响可忽略不计。优于现有技术使用硬化涂液后,对光学损失较大并却存在信赖性风险。(4)本发明提供的抗刮伤超高亮银反射膜,在背光中的亮度表现可达到95%(相对3M公司ESR产品),耐钢丝绒摩擦可达到500次。在亮度提升的同时也提升了生产、运输和组装过程的良率。
附图说明
构成本发明的一部分说明书附图用来提供对本发明的进一步阐释,本发明的示意性实施例及其说明用于进一步地理解本发明,并不构成对本发明的不当限定。
图1为本发明提供的一种抗刮伤超高亮银反射膜的横截面示意图。
10:基材
20:过渡层
30:反射层
40:低折层
50:高折层
60:易接着层
70:抗刮层
具体实施方式
为了更易理解本发明的结构及所能达成的功能特征和优点,下文将本发明的较佳的实施例,并配合图式做详细说明如下:
如图1所示,本发明提供一种抗刮伤超高亮银反射膜,所述反射膜自下而上依次包括基材10、过渡层20、反射层30、低折层40、高折层50、易接着层60和抗刮层70。
对比例1
提供一种银反射膜,制备方法包括下述步骤:(1)PET基材在真空镀膜腔体内经氩等离子体处理,去除表面杂质和氧化物,提高镀层和基材之间附着力;
(2)PET基材处理后进入反射层镀膜腔室,腔室镀膜压力0.1mbar,氩气流量220sccm(体积流量单位,标准立方厘米每分钟),开启加载于银靶的电源,功率为19kW,沉积银反射层;
(3)PET基材进入低折层镀膜腔室,腔室镀膜压力0.1mbar,氩气流量110sccm,氧气流量100sccm,开启加载于硅靶的电源,功率为15kW,沉积氧化硅低折层;
(4)PET基材进入高折层镀膜腔室,腔室镀膜压力0.1mbar,氩气流量120sccm,氩氧气流量100sccm,开启加载于氧化钛靶的电源,功率为18kW,沉积氧化钛高折层;
(5)PET基材进入易接着层镀膜腔室,腔室镀膜压力0.1mbar,氩气流量110sccm,氩氧气流量100sccm,开启加载于硅靶的电源,功率为5kW,沉积氧化硅易接着层;
(6)抗刮涂液的配置,其中十三氟辛基三甲氧基硅烷与氢氟醚溶剂重量比为50:1,充分搅拌混合均匀后涂布在易接着层表面,自然干燥3-5min后进入隧道式烘箱,烘箱温度100℃,换算后的停留时间为30min,收卷后常温放置熟化4小时。
对比例2
提供一种银反射膜,制备方法包括下述步骤:
(1)PET基材在真空镀膜腔体内经氩等离子体处理,去除表面杂质和氧化物,提高镀层和基材之间附着力;
(2)PET基材处理后进入过渡层镀膜腔室,腔室镀膜压力0.1mbar,氩气流量120sccm,开启加载于氧化钛靶的电源,功率为8kW,沉积氧化钛过渡层;
(3)PET基材处理后进入反射层镀膜腔室,腔室镀膜压力0.1mbar,氩气流量220sccm(体积流量单位,标准立方厘米每分钟),开启加载于银靶的电源,功率为19kW,沉积银反射层;
(4)PET基材进入易接着层镀膜腔室,腔室镀膜压力0.1mbar,氩气流量110sccm,氧气流量100sccm,开启加载于硅靶的电源,功率为5kW,沉积氧化硅易接着层;
(5)抗刮涂液的配置,其中十三氟辛基三甲氧基硅烷与氢氟醚溶剂重量比为50:1,充分搅拌混合均匀后涂布在易接着层表面,自然干燥3-5min后进入隧道式烘箱,烘箱温度100℃,换算后的停留时间为30min,收卷后常温放置熟化4小时。
对比例3
提供一种银反射膜,制备方法包括下述步骤:
(1)PET基材在真空镀膜腔体内经氩等离子体处理,去除表面杂质和氧化物,提高镀层和基材之间附着力;
(2)PET基材处理后进入过渡层镀膜腔室,腔室镀膜压力0.1mbar,氩气流量120sccm,开启加载于氧化钛靶的电源,功率为8kW,沉积氧化钛过渡层;
(3)PET基材处理后进入反射层镀膜腔室,腔室镀膜压力0.1mbar,氩气流量220sccm(体积流量单位,标准立方厘米每分钟),开启加载于银靶的电源,功率为19kW,沉积银反射层;
(4)PET基材进入低折层镀膜腔室,腔室镀膜压力0.1mbar,氩气流量110sccm,氧气流量100sccm,开启加载于硅靶的电源,功率为15kW,沉积氧化硅低折层;
(5)PET基材进入高折层镀膜腔室,腔室镀膜压力0.1mbar,氩气流量120sccm,氩氧气流量100sccm,开启加载于氧化钛靶的电源,功率为18kW,沉积氧化钛高折层;
(6)抗刮涂液的配置,其中十三氟辛基三甲氧基硅烷与氢氟醚溶剂重量比为50:1,充分搅拌混合均匀后涂布在高折层表面,自然干燥3-5min后进入隧道式烘箱,烘箱温度100℃,换算后的停留时间为30min,收卷后常温放置熟化4小时。
对比例4
提供一种银反射膜,制备方法包括下述步骤:
(1)PET基材在真空镀膜腔体内经氩等离子体处理,去除表面杂质和氧化物,提高镀层和基材之间附着力;
(2)PET基材处理后进入过渡层镀膜腔室,腔室镀膜压力0.1mbar,氩气流量120sccm,开启加载于氧化钛靶的电源,功率为8kW,沉积氧化钛过渡层;
(3)PET基材处理后进入反射层镀膜腔室,腔室镀膜压力0.1mbar,氩气流量220sccm(体积流量单位,标准立方厘米每分钟),开启加载于银靶的电源,功率为19kW,沉积银反射层;
(4)PET基材进入低折层镀膜腔室,腔室镀膜压力0.1mbar,氩气流量110sccm,氧气流量100sccm,开启加载于硅靶的电源,功率为15kW,沉积氧化硅低折层;
(5)PET基材进入高折层镀膜腔室,腔室镀膜压力0.1mbar,氩气流量120sccm,氩氧气流量100sccm,开启加载于氧化钛靶的电源,功率为18kW,沉积氧化钛高折层;
(6)PET基材进入易接着层镀膜腔室,腔室镀膜压力0.1mbar,氩气流量110sccm,氧气流量100sccm,开启加载于硅靶的电源,功率为5kW,沉积氧化硅易接着层;
对比例5
提供一种银反射膜,制备方法包括下述步骤:
(1)PET基材在真空镀膜腔体内经氩等离子体处理,去除表面杂质和氧化物,提高镀层和基材之间附着力;
(2)PET基材处理后进入过渡层镀膜腔室,腔室镀膜压力0.1mbar,氩气流量120sccm,开启加载于氧化钛靶的电源,功率为8kW,沉积氧化钛过渡层;
(3)PET基材处理后进入反射层镀膜腔室,腔室镀膜压力0.1mbar,氩气流量220sccm(体积流量单位,标准立方厘米每分钟),开启加载于银靶的电源,功率为19kW,沉积银反射层;
(4)PET基材进入低折层镀膜腔室,腔室镀膜压力0.1mbar,氩气流量110sccm,氧气流量100sccm,开启加载于硅靶的电源,功率为10kW,沉积氧化硅低折层;
(5)PET基材进入高折层镀膜腔室,腔室镀膜压力0.1mbar,氩气流量120sccm,氩氧气流量100sccm,开启加载于氧化钛靶的电源,功率为12kW,沉积氧化钛高折层;
(6)PET基材进入易接着层镀膜腔室,腔室镀膜压力0.1mbar,氩气流量110sccm,氧气流量100sccm,开启加载于硅靶的电源,功率为5kW,沉积氧化硅易接着层;
(7)抗刮涂液的配置,其中十三氟辛基三甲氧基硅烷与氢氟醚溶剂重量比为50:1,充分搅拌混合均匀后涂布在易接着层表面,自然干燥3-5min后进入隧道式烘箱,烘箱温度100℃,换算后的停留时间为30min,收卷后常温放置熟化4小时。
对比例6
提供一种银反射膜,制备方法包括下述步骤:
(1)PET基材在真空镀膜腔体内经氩等离子体处理,去除表面杂质和氧化物,提高镀层和基材之间附着力;
(2)PET基材处理后进入过渡层镀膜腔室,腔室镀膜压力0.1mbar,氩气流量120sccm,开启加载于氧化钛靶的电源,功率为8kW,沉积氧化钛过渡层;
(3)PET基材处理后进入反射层镀膜腔室,腔室镀膜压力0.1mbar,氩气流量220sccm,开启加载于银靶的电源,功率为19kW,沉积银反射层;
(4)PET基材进入低折层镀膜腔室,腔室镀膜压力0.1mbar,氩气流量110sccm,氧气流量100sccm,开启加载于硅靶的电源,功率为15kW,沉积氧化硅低折层;
(5)PET基材进入高折层镀膜腔室,腔室镀膜压力0.1mbar,氩气流量120sccm,氩氧气流量100sccm,开启加载于氧化钛靶的电源,功率为18kW,沉积氧化钛高折层;
(6)PET基材进入易接着层镀膜腔室,腔室镀膜压力0.1mbar,氩气流量110sccm,氧气流量100sccm,开启加载于硅靶的电源,功率为5kW,沉积氧化硅易接着层;
(7)抗刮涂液的配置,其中十三氟辛基三甲氧基硅烷与氢氟醚溶剂重量比为50:1,充分搅拌混合均匀后涂布在易接着层表面,自然干燥3-5min后进入隧道式烘箱,烘箱温度100℃,换算后的停留时间为30min,收卷后常温放置熟化4小时。
实施例1
提供一种抗刮伤超高亮银反射膜,所述反射膜自下而上依次包括基材10、过渡层20、反射层30、低折层40、高折层50、易接着层60和抗刮层70。制备方法包括下述步骤:(1)PET基材在真空镀膜腔体内经氩等离子体处理,去除表面杂质和氧化物,提高镀层和基材之间附着力;
(2)PET基材处理后进入过渡层镀膜腔室,腔室镀膜压力0.1mbar,氩气流量120sccm,开启加载于氧化钛靶的电源,功率为8kW,沉积氧化钛过渡层;
(3)PET基材处理后进入反射层镀膜腔室,腔室镀膜压力0.1mbar,氩气流量220sccm,开启加载于银靶的电源,功率为19kW,沉积银反射层;
(4)PET基材进入低折层镀膜腔室,腔室镀膜压力0.1mbar,氩气流量110sccm,氧气流量100sccm,开启加载于硅靶的电源,功率为18kW,沉积氧化硅低折层;
(5)PET基材进入高折层镀膜腔室,腔室镀膜压力0.1mbar,氩气流量120sccm,氩氧气流量100sccm,开启加载于氧化钛靶的电源,功率为22kW,沉积氧化钛高折层;
(6)PET基材进入易接着层镀膜腔室,腔室镀膜压力0.1mbar,氩气流量110sccm,氧气流量100sccm,开启加载于硅靶的电源,功率为5kW,沉积氧化硅易接着层;
(7)抗刮涂液的配置,其中十三氟辛基三甲氧基硅烷与氢氟醚溶剂重量比为50:1,充分搅拌混合均匀后涂布在易接着层表面,自然干燥3-5min后进入隧道式烘箱,烘箱温度100℃,换算后的停留时间为30min,收卷后常温放置熟化4小时。
对比例1-6和实施例1所得银反射膜的过渡层、银层、低折层、高折层和易接着层的厚度如表1所示。
对比例和实施例所得银反射膜的性能按如下方式进行测试:
反射率测试:按照NIST 2054的标准,利用Agilent Cary5000紫外可见近红外分光光度计测试380nm-780nm波长反射率。取380nm-780nm波长反射率平均值,若平均值越大,则使用该反射片的背光模组亮度越高
附着力测试:按照GB 1720-1979《漆膜附着力测定法》的标准,测试涂层的附着力,其中100/100代表不脱膜,90/100代表脱落10%。
颜色b*值测试:采用Konica Minolta CM3600A测试,b*值越小颜色越偏蓝色。
相对亮度测试:采用Konica Minolta CAS40辉度仪测试,测试所得的绝对亮度值与3M公司ESR产品绝对亮度做比值,得到相对亮度值。
耐磨测试:载荷为1kg,0000#钢丝绒,摩擦头面积20mm*20mm,60次循环每分钟,500次循环;判级标准:0级为无明显磨痕;1级为有轻微磨痕;2级为磨痕可见;3级为磨痕明显可见;4级为磨痕非常严重。
表1对比例1-6和实施例1中的反射膜中过渡层、银层、低折层、高折层和易接着层的厚度
表2对比例1-6和实施例1的测试结果
从表2可以看出,对比例1与实施例1相比,缺失了过渡层氧化钛。因此对比例1中测试面积镀层脱落了40%,附着力差,难以保证在使用过程中的稳定性和信赖性,因此过渡层氧化钛对于增加镀层与PET基材间的附着力十分必要,对比例1不合格。
对比例2与实施例1相比,缺失了光学调制层。其可见光波段的反射率仅有94.2%,组装背光后的相对亮度仅87%,不符合市场对高亮度反射膜的需求。因此光学调制层对于提升反射率和提升亮度是十分重要的,对比例2为不合格品。
对比例3与实施例1相比,缺失了易接着层。耐摩擦测试可以看出,由于没有易接着层的存在,抗刮涂液中有效成分不能与接触界面形成很好的附着,因此耐磨性能很差为3级,对比例3为不合格品。
对比例4与实施例1相比,缺失了抗刮涂布层。耐磨测试可以看出,由于没有抗刮层的保护,耐磨性能非常差,达到了4级。在生产、运输和组装过程中不能有效地防护,不可避免地要被导光板等接触物刮伤,导致银层接触水汽而氧化失效,形成明显可见的暗影,因此对比例4为不合格品。
从实施例1可以看出,通过控制光学调制层的厚度搭配,可以显著影响银反射膜的反射率和颜色(b*值)。反射率越高在组装的背光中亮度表现越优异,b*值越小颜色越偏蓝色,适配的LED等范围更加广泛,可配合进一步提升亮度和降低背光模组厂家的成本。其中实施例1,组装背光后相对亮度可达到95.4%,符合当前市场对高亮度银反射膜的需求。实施例1符合本发明的全部要求,为合格品,是本发明的优选实施例。
由于对比例5和对比例6组装后相对亮度小于95%,不符合本发明对亮度的要求,为不合格品。
以上所述,仅为本发明的较佳实施例而已,并非用于限定本发明的保护范围。凡是根据本发明内容所做的均等变化与修饰,均涵盖在本发明的专利范围内。
Claims (10)
1.一种抗刮伤超高亮度银反射膜,其特征在于,所述反射膜自下而上依次包括基材、功能层和抗刮层。
2.根据权利要求1所述的抗刮伤超高亮度银反射膜,其特征在于,所述功能层包括过渡层、反射层、光学调制层和易接着层。
3.根据权利要求2所述的抗刮伤超高亮度银反射膜,其特征在于,所述光学调制层包括低折层和高折层;所述反射膜自下而上依次包括基材、过渡层、反射层、低折层、高折层、易接着层和抗刮层。
4.根据权利要求3所述的抗刮伤超高亮度银反射膜,其特征在于,所述过渡层为金属氧化物层,所述反射层是银镀层,所述低折层材质选自氟化镁或氧化硅中的一种,所述高折层材质选自氧化钛、氧化铌、氧化锌或氧化铝中的一种,所述易接着层材质为氧化硅。
5.根据权利要求4所述的抗刮伤超高亮度银反射膜,其特征在于,所述低折层的厚度为59nm,所述高折层的厚度为63nm。
6.根据权利要求4所述的抗刮伤超高亮度银反射膜,其特征在于,所述过渡层材质为氧化钛,所述反射层材质为银,所述低折层材质为氧化硅,所述高折层材质为氧化钛,所述易接着层材质为氧化硅;所述过渡层的厚度为10nm,所述银反射层的厚度为120nm,所述低折层的厚度为59nm,所述高折层的厚度为63nm,所述易接着层的厚度为6nm。
7.根据权利要求1所述的抗刮伤超高亮度银反射膜,其特征在于,所述抗刮层由抗刮涂液形成。
8.根据权利要求7所述的抗刮伤超高亮度银反射膜,其特征在于,所述抗刮涂液包含溶剂和有效助剂;所述有效助剂选自十七氟癸基三甲氧基硅烷、或十三氟辛基三甲氧基硅烷、或二者的组合。
9.根据权利要求7所述的抗刮伤超高亮度银反射膜,其特征在于,所述抗刮涂液包括十三氟辛基三甲氧基硅烷与氢氟醚溶剂,十三氟辛基三甲氧基硅烷与氢氟醚溶剂的重量比为50:1。
10.一种根据权利要求4所述的抗刮伤超高亮银反射膜的制备方法,所述方法包括如下步骤:
(1)利用高真空中频磁控溅射工艺在所述基材上制备过渡层;
(2)利用高真空中频磁控溅射工艺在所述过渡层上制备反射层;
(3)利用高真空中频磁控溅射工艺在所述反射层上制备低折层;
(4)利用高真空中频磁控溅射工艺在所述低折层上制备高折层;
(5)利用高真空中频磁控溅射工艺在所述高折层上制备易接着层;
(6)在易接着层上涂布抗刮涂液;
(7)自然干燥,转移至100℃烘箱干燥熟化,在室温环境下放置;
经过上述步骤后获得所述抗刮伤超高亮银反射膜。
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